TWI598598B - Chip electronic components inspection methods and inspection equipment - Google Patents

Chip electronic components inspection methods and inspection equipment Download PDF

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TWI598598B
TWI598598B TW102125113A TW102125113A TWI598598B TW I598598 B TWI598598 B TW I598598B TW 102125113 A TW102125113 A TW 102125113A TW 102125113 A TW102125113 A TW 102125113A TW I598598 B TWI598598 B TW I598598B
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wafer
inspection
electronic component
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voltage
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TW201418727A (en
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Hiroto Hayashi
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Humo Laboratory Ltd
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/01Subjecting similar articles in turn to test, e.g. "go/no-go" tests in mass production; Testing objects at points as they pass through a testing station
    • G01R31/013Testing passive components
    • G01R31/016Testing of capacitors
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26Testing of individual semiconductor devices

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  • Testing Electric Properties And Detecting Electric Faults (AREA)
  • Measurement Of Resistance Or Impedance (AREA)
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Description

晶片電子零件之檢查方法及檢查裝置 Chip electronic component inspection method and inspection device

本發明係關於高速檢査大量的晶片電子零件的方法及裝置。 The present invention relates to a method and apparatus for inspecting a large number of wafer electronic components at high speed.

隨著行動電話、液晶電視、遊戲機所代表的電氣製品的生產量的增加,被組裝在如上所示之電氣製品的晶片電子零件的生產量明顯增加。以晶片電子零件而言,晶片電容器(chip capacitor,亦被稱為chip condenser)、晶片電阻器(包含晶片變阻器)、及晶片感應器已廣為人知。 With the increase in the production of electrical products represented by mobile phones, liquid crystal televisions, and game machines, the production of electronic components of wafers assembled into electrical products as shown above has significantly increased. In the case of chip electronic components, chip capacitors (also referred to as chip capacitors), chip resistors (including wafer varistors), and wafer sensors are well known.

晶片電子零件例如晶片電容器係具有極小的尺寸,以一次的製造批量製作數萬~數十萬個的大量晶片電容器。 Chip electronic components such as wafer capacitors have extremely small sizes, and tens of thousands to hundreds of thousands of wafer capacitors are produced in a single manufacturing process.

為了降低因組裝有晶片電子零件的電氣製品的晶片電子零件的缺陷而起的不良品率,一般係針對大量製造的晶片電子零件進行全數檢査。例如,針對晶片電容器,係針對其全數進行靜電電容等電氣特性的檢査。 In order to reduce the defective product rate due to defects in the electronic components of the wafer in which the electronic component of the wafer is assembled, it is generally performed for the mass-produced wafer electronic component. For example, for wafer capacitors, electrical characteristics such as electrostatic capacitance are checked for all of them.

以往以用以高速檢査大量的晶片電子零件的 電氣特性的方法而言,係利用一種包含以下工程之進行檢査對象之各晶片電子零件的電氣特性的檢査的晶片電子零件之檢査方法:在將以分別根據同一規格顯示預定的同一電氣特性的方式所製造的二以上的檢査對象的晶片電子零件互相近接配置的狀態下,將互相獨立的檢査器與該晶片電子零件的各個作電性連接的工程;接著由各檢査器,對各自的晶片電子零件施加具有互相相同或大致相同的頻率的檢査用電壓,以各檢査器檢測藉由該檢査用電壓的施加而在各晶片電子零件所發生的電流值的工程。實施該檢査方法時,一般使用例如具備有形成有多數透孔的圓盤(晶片電子零件保持板)的晶片電子零件檢査裝置。在圓盤係設有分別收容檢査對象的晶片電子零件的多數透孔。圓盤之相鄰接的透孔係形成在互相近接的位置。使該圓盤旋轉,使晶片電子零件收容在各自的透孔,在該狀態下,將以圓盤的直徑方向排列的複數個晶片電子零件形成為一組,藉由檢査器來檢査晶片電子零件的電氣特性。 Used to check a large number of wafer electronic parts at high speed. In the method of electrical characteristics, a method of inspecting a chip electronic component using an inspection of electrical characteristics of each of the electronic components of the wafer to be inspected in the following process is employed: a method of displaying predetermined predetermined electrical characteristics in accordance with the same specification In the state in which the electronic components of the two or more inspection objects to be manufactured are arranged in close proximity to each other, the mutually independent inspection device and the electronic components of the wafer are electrically connected; and then the respective wafers are respectively used for the respective wafers. The parts are applied with voltages for inspection having the same or substantially the same frequency, and each of the inspectors detects the current value generated in each of the electronic components of the wafer by the application of the voltage for inspection. When performing this inspection method, for example, a wafer electronic component inspection apparatus including a disk (wafer electronic component holding plate) in which a plurality of through holes are formed is generally used. A plurality of through holes for accommodating the electronic components of the wafer to be inspected are provided on the disk. Adjacent through holes of the disc are formed in close proximity to each other. Rotating the disk to accommodate the chip electronic components in the respective through holes. In this state, a plurality of chip electronic components arranged in the diameter direction of the disk are formed into a group, and the chip electronic components are inspected by the inspector. Electrical characteristics.

晶片電子零件之檢査裝置一般由以下所構成 :上述圓盤(晶片電子零件保持板);配置在與該圓盤的各透孔的兩開口部近接的位置的一對電極端子;與一對電極端子的各個作電性連接的檢査器;及以對各檢査器供給關於電氣能量與檢査處理的訊號的方式與各檢査器作電性連接的控制器。接著,由上述檢査器透過電極端子,對被收容在二以上的透孔的晶片電子零件的各個施加檢査用電壓,以各檢査器檢測藉由該檢査用電壓的施加而在各晶片電 子零件所發生的電流值,藉此進行檢査對象的各晶片電子零件的電氣特性的檢査。 The inspection device for electronic parts of wafers generally consists of the following a disk (a chip electronic component holding plate); a pair of electrode terminals disposed at a position close to both opening portions of each of the through holes of the disk; and an inspector electrically connected to each of the pair of electrode terminals; And a controller electrically connected to each of the inspectors in a manner that supplies signals to the inspectors regarding electrical energy and inspection processing. Then, the inspector transmits an inspection voltage to each of the electronic components of the wafer accommodated in the through holes through the electrode terminal, and each of the inspectors detects that the voltage is applied to each of the wafers by the application of the inspection voltage. The current value generated by the sub-parts is used to check the electrical characteristics of the electronic components of the respective wafers to be inspected.

例如,若使用晶片電容器的靜電電容之檢査 器作為上述各檢査器時,由各檢査器,對各自的晶片電容器(晶片電子零件)施加具有互相相同或大致相同的頻率的檢査用電壓,以各檢査器檢測藉由該檢査用電壓的施加而在各晶片電容器所發生的電流的電流值,藉此根據上述檢査用電壓的電壓值與所檢測到的電流的電流值,進行檢査對象的各晶片電容器的靜電電容(電氣特性)的檢査。其中,關於由各檢査器被施加至晶片電子零件的電壓的頻率,最初係被設為互相相同。但是,若由作近接配置之複數檢査器對晶片電子零件施加相同頻率的電壓時,在由各檢査器被施加至各自的晶片電子零件的電壓的頻率間發生干擾,結果發現容易在檢査結果發生不良情形。因此,近年來,亦進行使由各檢査器施加至晶片電子零件的電壓的頻率稍微錯開(並未形成為相同而形成為大致相同)。以晶片電容器的靜電電容之檢査器而言,係可使用例如市面販售的靜電電容測定器(代表例,電容計:E4981A,安捷倫科技(Agilent Technologies)(股)製)。 For example, if the electrostatic capacitance of a wafer capacitor is used When each of the inspectors is used, each of the inspectors applies an inspection voltage having the same or substantially the same frequency to each of the wafer capacitors (wafer electronic components), and each of the inspectors detects the application of the inspection voltage. On the other hand, the current value of the current generated in each of the wafer capacitors is used to check the electrostatic capacitance (electrical characteristics) of each wafer capacitor to be inspected based on the voltage value of the inspection voltage and the current value of the detected current. Here, the frequencies of the voltages applied to the electronic components of the wafer by the respective inspectors are initially set to be the same as each other. However, if a voltage of the same frequency is applied to the electronic components of the wafer by the multi-checker for the proximity arrangement, interference occurs between the frequencies of the voltages applied to the respective chip electronic components by the respective inspectors, and it is found that the inspection result is easy to occur. Bad situation. Therefore, in recent years, the frequency of the voltage applied to the electronic components of the wafer by the respective inspectors has been slightly shifted (not formed to be the same and formed to be substantially the same). For the inspection of the electrostatic capacitance of the wafer capacitor, for example, a commercially available electrostatic capacitance measuring device (representative example, capacitance meter: E4981A, manufactured by Agilent Technologies, Inc.) can be used.

在專利文獻1中係揭示將多數電路零件(例如 晶片電子零件)進行試驗(檢査),接著按照試驗結果來分類電路零件的電路零件處理器。該電路零件處理器係具備有:設有多數零件台(透孔)的碟片狀試驗板(晶片電子零件保持板)、被配置在與試驗板的各零件台近接的位置的上側 接點及下側接點(一對電極端子)、及與各接點作電性連接的測試器(檢査器)。上述試驗板係在其中心與外周緣之間以直徑方向互相隔著間隔而以圓周方向具備有72個4台零件台之列。使該試驗板旋轉,在將電路零件收容在該零件台(透孔)的狀態下,將收容在各列的零件台的複數個電路零件作為一組來進行電路零件的試驗。 In Patent Document 1, it is disclosed that most circuit components (for example The chip electronic parts are tested (inspected), and then the circuit part processors of the circuit parts are classified according to the test results. The circuit component processor includes a disk-shaped test plate (wafer electronic component holding plate) provided with a plurality of component tables (through holes), and is disposed on the upper side of a position close to each component table of the test plate. A contact and a lower contact (a pair of electrode terminals) and a tester (inspector) electrically connected to each contact. The test plate has 72 rows of four component stages in the circumferential direction between the center and the outer periphery thereof at intervals in the radial direction. The test piece was rotated, and in the state in which the circuit component was housed in the component table (through hole), the circuit component was tested as a group of a plurality of circuit components housed in the respective parts of each column.

[先前技術文獻] [Previous Technical Literature]

[專利文獻] [Patent Literature]

[專利文獻1]日本特表2000-501174號公報 [Patent Document 1] Japanese Patent Publication No. 2000-501174

如前所述,自以往以來,為了高速檢査大量的晶片電子零件的電氣特性,使用二台以上之檢査器,同時(在互相重複的時期)檢査被保持在圓盤狀晶片電子零件保持板的複數晶片電子零件的電氣特性已為人所知。 As described above, in order to check the electrical characteristics of a large number of electronic components of a wafer at a high speed, two or more inspectors are used, and at the same time (in a period of repetition of each other), the inspection is held on the disc-shaped electronic component holding plate. The electrical characteristics of complex wafer electronic components are well known.

但是,根據本發明人的研究,近年來一般一面被利用一面進行極度小(例如寬幅為0.3mm左右,而長度為0.6mm左右的尺寸、或更小的尺寸)的晶片電子零件的檢査時,將近接配置的複數晶片電子零件的電氣特性,使用複數檢査器,二個或二個以上同時檢査時,在使用預防將由各檢査器被施加至晶片電子零件的電壓的頻率錯開的頻率間的干擾的手段的情形下,亦清楚得知電氣特性之 檢査結果的精度會降低。 However, according to the study by the present inventors, in recent years, inspection of wafer electronic parts which are extremely small (for example, a width of about 0.3 mm and a length of about 0.6 mm or less) is generally used. The electrical characteristics of the plurality of chip electronic components to be closely arranged, using a plurality of checkers, when two or more simultaneous inspections are used, between the frequencies at which the frequency of the voltages applied to the electronic components of the wafers is prevented from being shifted by the respective inspectors In the case of means of interference, it is also clear that electrical characteristics are known. The accuracy of the inspection results will be reduced.

本發明人更進一步研究的結果,如上所述, 發現電氣特性之檢査精度降低的原因係在於例如為了檢測互相近接配置的二個以上的極度小的尺寸的晶片電子零件的電氣特性,由互相獨立的檢査器的各個,對各自的晶片電子零件,在互相重複的時期施加具有互相相同或大致相同的頻率的檢査用電壓時,根據在鄰接配置的另一方晶片電子零件所發生的電訊號(電壓或電流)所發生的雜訊會混入(在各個晶片電子零件所發生的電訊號互相干擾)在非常近接的狀態下作配置的極度小的尺寸的晶片電子零件的一方所發生的電訊號(電壓或電流)。 The results of further research by the inventors, as described above, It is found that the reason for the decrease in the inspection accuracy of the electrical characteristics is, for example, in order to detect the electrical characteristics of two or more extremely small-sized wafer electronic components arranged in close proximity to each other, and for each of the wafer electronic components, When voltages for inspection having the same or substantially the same frequency are applied to each other at a time when they overlap each other, noise generated by electric signals (voltage or current) generated in the electronic components of the other wafer adjacent to each other is mixed (in each The electrical signals generated by the electronic components of the chip interfere with each other. The electrical signals (voltage or current) generated by one of the extremely small-sized electronic components of the chip placed in a very close state.

本發明之課題在提供一種使用二台或二台以 上之檢査器來高速且高精度檢査大量的晶片電子零件(尤其極度小的尺寸的晶片零件)的電氣特性的方法。本發明之課題亦另外在提供一種使用二台或二台以上之檢査器,高速且高精度檢査大量的晶片電子零件(尤其極度小的尺寸的晶片零件)的電氣特性的裝置。 The subject of the present invention is to provide a use of two or two The above-mentioned inspector is a method for checking the electrical characteristics of a large number of wafer electronic parts (especially extremely small-sized wafer parts) with high speed and high precision. Another object of the present invention is to provide an apparatus for inspecting electrical characteristics of a large number of wafer electronic components (especially extremely small-sized wafer components) with high speed and high precision using two or more inspectors.

本發明係一種晶片電子零件之檢査方法,其係包含以下工程之進行檢査對象之各晶片電子零件的電氣特性的檢査的晶片電子零件之檢査方法:在將以分別根據同一規格顯示預定的同一電氣特性的方式所製造的二以上的檢査對象的晶片電子零件互相近接配置的狀態下,將互 相獨立的檢査器與該晶片電子零件的各個作電性連接的工程;接著由各檢査器,對各自的晶片電子零件施加具有互相相同或大致相同的頻率的檢査用電壓,以各檢査器檢測藉由該檢査用電壓的施加而在各晶片電子零件所發生的電流值的工程,其特徵為:在不會互相重複的時期進行由各檢査器對各晶片電子零件施加檢査用電壓。 The present invention relates to a method for inspecting electronic components of a wafer, which comprises the inspection method of a wafer electronic component for inspecting the electrical characteristics of each of the electronic components of the wafer to be inspected: the same electrical power to be displayed in accordance with the same specification In a state in which the electronic components of the two or more inspection objects to be manufactured are in close proximity to each other, the mutual characteristics are An independent electrical connection between the inspector and the electronic components of the wafer; and then, by each inspector, an inspection voltage having the same or substantially the same frequency is applied to the respective chip electronic components, and is inspected by each inspector The process of calculating the current value generated in each of the electronic components of the wafer by the application of the voltage for inspection is characterized in that the inspection voltage is applied to each of the electronic components of the wafer by each of the inspectors at a time when they do not overlap each other.

本發明之晶片電子零件之檢査方法之較佳態樣係如下所示。 Preferred aspects of the inspection method of the wafer electronic component of the present invention are as follows.

(1)上述晶片電子零件處於被保持在以可繞中心軸旋轉的方式被軸支在基台的晶片電子零件保持板的透孔的群組的狀態,該晶片電子零件保持板具備有以互相隔著間隔形成四列以上的同心圓的方式配置在圓盤上的透孔的群組,其中各列的透孔係位於由中心軸朝半徑方向延伸的直線上,對晶片電子零件施加檢査用電壓係針對位於由中心軸朝半徑方向延伸的直線上的透孔的群組,在不會互相重複的時期依序進行。 (1) The chip electronic component is in a state of being held by a group of through holes of a wafer electronic component holding plate that is axially supported on the base so as to be rotatable about a central axis, the chip electronic component holding plate being provided with each other a group of through holes arranged on the disk in such a manner that four or more concentric circles are formed at intervals, wherein the through holes of the respective columns are located on a straight line extending in the radial direction from the central axis, and the wafer electronic parts are inspected for inspection. The voltage system is sequentially performed for a group of through holes located on a straight line extending in the radial direction from the central axis, at a time when they do not overlap each other.

(2)透孔的群組以形成六列的同心圓的方式被配置在圓盤上,接近圓盤外周的三列的透孔的群組所保持的晶片電子零件的檢査係藉由具備有合計三對電極端子的檢査器A來進行,接著接近圓盤的中心軸的三列的透孔群所保持的晶片電子零件的檢査係藉由具備有合計三對電極端子的檢査器B來進行。 (2) The group of the through holes is arranged on the disc in such a manner as to form six rows of concentric circles, and the inspection of the electronic parts of the wafer held by the group of the through holes close to the outer circumference of the disc is provided by The inspector A of the three pairs of electrode terminals is collectively performed, and then the inspection of the electronic components of the wafer held by the three rows of the through-hole groups close to the central axis of the disk is performed by the inspector B having the total of three pairs of electrode terminals. .

(3)以透孔的群組形成八列同心圓的方式被配置在圓盤上,接近圓盤外周的四列透孔的群組所保持的晶 片電子零件的檢査係藉由具備有合計四對電極端子的檢査器A來進行,接著接近圓盤的中心軸的四列透孔群所保持的晶片電子零件的檢査係藉由具備有合計四對電極端子的檢査器B來進行。 (3) The crystals are arranged on the disc in such a manner that the groups of the through holes form eight rows of concentric circles, and the crystals held by the group of four rows of through holes on the outer circumference of the disc are The inspection of the electronic component is performed by the inspector A having the total of four pairs of electrode terminals, and then the inspection of the electronic components of the wafer held by the four rows of the through-hole groups close to the central axis of the disk is provided by the total The inspector B of the electrode terminal is performed.

(4)以透孔的群組形成十二列同心圓的方式被 配置在圓盤上,接近圓盤外周的四列透孔的群組所保持的晶片電子零件的檢査係藉由具備有合計四對電極端子的檢査器A來進行,接近圓盤的中心軸的四列透孔群所保持的晶片電子零件的檢査係藉由具備有合計四對電極端子的檢査器B來進行,接著位於接近上述外周側的四列透孔的群組與接近中心軸的四列透孔的群組之間的四列透孔的群組所保持的晶片電子零件的檢査係藉由具備有合計四對電極端子的檢査器C來進行。 (4) by the group of through holes forming twelve columns of concentric circles The inspection of the electronic components of the wafer held by the group of four rows of through holes adjacent to the outer circumference of the disk is performed by an inspector A having a total of four pairs of electrode terminals, which is close to the central axis of the disk. The inspection of the electronic components of the wafer held by the four rows of through-hole groups is performed by an inspector B having a total of four pairs of electrode terminals, and then a group of four rows of through holes close to the outer peripheral side and four groups close to the central axis The inspection of the electronic components of the wafer held by the group of four rows of through holes between the groups of the through-holes is performed by the inspector C having the total of four pairs of electrode terminals.

其中,透孔的群組係可以形成九列同心圓的方式被配置在圓盤上,此時係分別使用具備有三對電極端子的三個檢査器來進行相同的檢査。 The group of the through holes may be arranged on the disk in such a manner that nine rows of concentric circles are formed. In this case, the same inspection is performed using three inspectors provided with three pairs of electrode terminals.

(5)所被檢査的晶片電子零件為在相對向的表面具備有一對電極的零件。 (5) The electronic component of the wafer to be inspected is a component having a pair of electrodes on the opposite surface.

(6)所被檢査的晶片電子零件為晶片電容器。 (6) The electronic component of the wafer to be inspected is a wafer capacitor.

(7)所被檢査的電氣特性為靜電電容。 (7) The electrical characteristics to be inspected are electrostatic capacitance.

其中,在上述本發明之檢査方法中,上述「將二以上的檢査對象的晶片電子零件配置在互相近接的位置」意指「以包含被配置在互相近接的位置的至少二個晶片電子零件的方式,配置二以上的檢査對象的晶片電子零 件」。 In the above-described inspection method of the present invention, the above-described "position of two or more wafer electronic components to be inspected at positions adjacent to each other" means "to include at least two wafer electronic components disposed at positions close to each other" Method, configure the chip electronic zero of the inspection object of two or more Piece."

此外,上述「互相近接的位置」意指由「與 二個晶片電子零件的各個作電性連接的互相獨立的(各個的)檢査器,對各自的晶片電子零件在互相重複的時期施加具有電氣特性檢査用的互相相同或大致相同的頻率的檢査用電壓時,在其中一方晶片電子零件所發生的電訊號(電壓或電流),混入根據在另一方晶片電子零件所發生的電訊號(電壓或電流)所發生的雜訊(在各個晶片電子零件所發生的電訊號間發生干擾的)的位置」。 In addition, the above-mentioned "close-to-close position" means "with Each of the two wafer electronic components is electrically connected to each other (individual) inspectors, and the respective wafer electronic components are subjected to inspections having the same or substantially the same frequency for electrical property inspection at the time of repeating each other. At voltage, the electrical signal (voltage or current) generated in one of the electronic components of the chip is mixed with noise generated by the electrical signal (voltage or current) generated by the electronic component on the other chip (in each chip electronic component) The position where the interference occurs between the electrical signals."

本發明另外亦係一種晶片電子零件之檢査裝 置,其係包含:以板狀材料被形成在可暫時收容晶片電子零件的二以上的透孔互相近接的位置而成的晶片電子零件保持板;被配置在與該晶片電子零件保持板的各透孔的兩開口部近接的位置的一對電極端子;與該一對電極端子的各個作電性連接的檢査器;及以對各檢査器供給有關電氣能量及檢査處理的訊號的方式與各檢査器作電性連接的控制器,由各檢査器透過電極端子,對被收容在二以上的透孔的晶片電子零件的各個,在預定的時期施加具有互相相同或大致相同的頻率的檢査用電壓,以各檢査器檢測藉由該檢査用電壓的施加而在各晶片電子零件所發生的電流值的晶片電子零件檢査裝置,其特徵為:在該控制器具備有以對被收容在晶片電子零件保持板的二以上的透孔的晶片電子零件的各個施加檢査用電壓的時期不會互相重複的方式進行控制的控制系統。 The invention is also a check device for electronic parts of wafers. The method includes a wafer electronic component holding plate in which a plate-shaped material is formed at a position where two or more through holes of the electronic component of the wafer are temporarily accommodated, and is disposed on each of the electronic component holding plates of the chip. a pair of electrode terminals at positions where the two openings of the through hole are in close contact; an inspector electrically connected to each of the pair of electrode terminals; and a method for supplying electrical energy and inspection processing signals to the respective inspectors The inspector is electrically connected to the controller, and each of the inspectors passes through the electrode terminal, and applies inspections having the same or substantially the same frequency to each of the electronic components of the wafer accommodated in the two or more through holes for a predetermined period of time. A voltage electronic device for detecting a current value generated in each of the electronic components of the wafer by the application of the voltage for inspection by each of the inspectors, wherein the controller is provided with a pair of electrons stored in the wafer Controlling the control voltages of the wafer electronic components of the through-holes of the two or more through-holes of the component holding plate without overlapping each other System.

其中,在上述本發明之檢査裝置中,上述「 形成在二以上的透孔互相近接的位置」意指「在收容在二以上的透孔的二以上的檢査對象的晶片電子零件被配置在互相近接的位置般的位置形成上述二以上的透孔」。 In the above inspection apparatus of the present invention, the above The position in which the two or more through holes are adjacent to each other means that "the above-mentioned two or more through holes are formed at positions where the electronic components of the inspection target two or more of the through holes accommodated in the two or more through holes are arranged close to each other. "."

藉由實施本發明之檢査方法,可使用二台或二台以上之檢査器,來高速(短時間)且高精度地檢査大量的晶片電子零件的電氣特性。 By carrying out the inspection method of the present invention, two or more inspectors can be used to inspect the electrical characteristics of a large number of wafer electronic parts at high speed (short time) and with high precision.

藉由使用本發明之檢査裝置,可使用二台或二台以上之檢査器,來高速(短時間)且高精度地檢査大量的晶片電子零件的電氣特性。 By using the inspection apparatus of the present invention, it is possible to inspect the electrical characteristics of a large number of wafer electronic parts at high speed (short time) and with high precision using two or more inspection apparatuses.

10‧‧‧晶片電子零件檢査裝置 10‧‧‧Whip electronic parts inspection device

11‧‧‧晶片電子零件保持板 11‧‧‧ wafer electronic parts holding board

11a‧‧‧透孔 11a‧‧‧through hole

12a、12b‧‧‧電極端子 12a, 12b‧‧‧ electrode terminals

14a、14b‧‧‧檢査器 14a, 14b‧‧‧ inspector

15‧‧‧控制器 15‧‧‧ Controller

15a‧‧‧控制系統 15a‧‧‧Control system

19、19a、19b、19c、19d、19e、19f‧‧‧晶片電容器 19, 19a, 19b, 19c, 19d, 19e, 19f‧‧‧ wafer capacitors

21‧‧‧電容器本體 21‧‧‧ Capacitor body

22a、22b‧‧‧電極 22a, 22b‧‧‧ electrodes

23a、23b‧‧‧切換器 23a, 23b‧‧‧Switch

24a、24b、24c、24d、24e、24f‧‧‧開閉器 24a, 24b, 24c, 24d, 24e, 24f‧‧‧ shutters

25‧‧‧控制器 25‧‧‧ Controller

31‧‧‧晶片電子零件收容部 31‧‧‧Whip Electronic Parts Storage Department

32‧‧‧晶片電子零件檢査部 32‧‧‧Whip Electronic Parts Inspection Department

33‧‧‧晶片電子零件排出部 33‧‧‧ Chip Electronic Parts Discharge Department

41‧‧‧基台 41‧‧‧Abutment

42‧‧‧中心軸 42‧‧‧ center axis

43‧‧‧旋轉驅動裝置 43‧‧‧Rotary drive

44‧‧‧晶片電子零件保持蓋件 44‧‧‧ wafer electronic parts retention cover

45‧‧‧底板 45‧‧‧floor

45a‧‧‧氣體排出通路 45a‧‧‧ gas discharge path

45b‧‧‧氣體供給通路 45b‧‧‧ gas supply path

46‧‧‧氣體排出裝置 46‧‧‧ gas discharge device

47‧‧‧晶片電子零件供給裝置(零件進給器) 47‧‧‧Whip electronic parts supply device (part feeder)

49‧‧‧表示晶片電子零件保持板的旋轉方向的箭號 49‧‧‧ indicates the arrow of the direction of rotation of the electronic component holding plate of the chip

51‧‧‧筒體 51‧‧‧Cylinder

52‧‧‧電極支持板 52‧‧‧electrode support plate

53‧‧‧電極端子支持板 53‧‧‧Electrode terminal support board

54‧‧‧直動驅動裝置 54‧‧‧Direct drive

55‧‧‧電源 55‧‧‧Power supply

56‧‧‧電壓計 56‧‧‧ voltmeter

57‧‧‧電流計 57‧‧‧ galvanometer

58‧‧‧放大器 58‧‧‧Amplifier

59‧‧‧電阻器 59‧‧‧Resistors

61‧‧‧管件支持蓋件 61‧‧‧Fitting support cover

61a‧‧‧透孔 61a‧‧‧through hole

62‧‧‧管件 62‧‧‧ Pipe fittings

63‧‧‧加壓氣體供給裝置 63‧‧‧ Pressurized gas supply device

64‧‧‧晶片電子零件收容容器 64‧‧‧Whip electronic parts storage container

80‧‧‧晶片電子零件檢査裝置 80‧‧‧Whip electronic parts inspection device

圖1係顯示檢査對象的晶片電子零件之一例亦即晶片電容器的構成例的斜視圖。 Fig. 1 is a perspective view showing a configuration example of a wafer capacitor, which is an example of a wafer electronic component to be inspected.

圖2係顯示可較佳使用在用以實施本發明之檢査方法的晶片電子零件檢査裝置的構成例的正面圖。 Fig. 2 is a front elevational view showing a configuration example of a wafer electronic component inspection apparatus which can be preferably used in the inspection method for carrying out the invention.

圖3係將圖2之檢査裝置10的晶片電子零件收容部31,沿著圓周方向顯示晶片電子零件保持板11的透孔的群組的配置、且被保持(收容)在各透孔的晶片電子零件的舉動的放大剖面圖。 3 is a view showing the arrangement of the group of the through holes of the wafer electronic component holding plate 11 along the circumferential direction of the chip electronic component housing portion 31 of the inspection apparatus 10 of FIG. 2, and holding (accommodating) the wafer in each of the through holes. An enlarged cross-sectional view of the behavior of the electronic component.

圖4係將圖2之檢査裝置10的晶片電子零件檢査部 32,使檢査器的電極近接配置在被保持(收容)在以朝直徑方向延伸的方式被配置在晶片電子零件保持板11的圓盤上的透孔的群組的晶片電子零件(19a、19b、19c、19d、19e、19f的合計六個)的各個的狀態下所顯示的放大剖面圖。 4 is a wafer electronic component inspection unit of the inspection apparatus 10 of FIG. 32. The wafer electronic component (19a, 19b) in which the electrodes of the inspector are closely arranged in a group of the through holes that are held (accommodated) on the disk of the wafer electronic component holding plate 11 so as to extend in the diametrical direction An enlarged cross-sectional view showing each of the six (19c, 19d, 19e, and 19f total) states.

圖5係顯示以圖2之檢査裝置10的晶片電子零件排出部33使檢査完畢的晶片電子零件排出的樣子的放大剖面圖。 Fig. 5 is an enlarged cross-sectional view showing a state in which the wafer electronic component discharge portion 33 of the inspection apparatus 10 of Fig. 2 discharges the inspected wafer electronic component.

圖6係概略顯示在圖2之檢査裝置10中,控制器15、檢査器14a、14b、及被保持(收容)在以朝直徑方向延伸的方式被配置在晶片電子零件保持板11的圓盤上的透孔的群組的晶片電子零件(19a、19b、19c、19d、19e、19f合計六個)的電性連接狀態的區塊圖。 Fig. 6 is a view schematically showing the controller 15, the inspectors 14a, 14b, and the disc held (accommodated) in the diametrical direction of the wafer electronic component holding plate 11 in the inspection apparatus 10 of Fig. 2. A block diagram of the electrical connection state of the wafer electronic components (six in total, 19a, 19b, 19c, 19d, 19e, and 19f) of the group of the through holes.

圖7係概略顯示對應圖6之區塊圖的各零件間的電性連接狀態的電路圖。 Fig. 7 is a circuit diagram schematically showing the electrical connection state between the respective parts corresponding to the block diagram of Fig. 6.

圖8係針對可使用在用以實施本發明之檢査方法的晶片電子零件檢査裝置的基本構成,概略顯示其電性連接狀態的區塊圖。 Fig. 8 is a block diagram schematically showing the electrical connection state of a wafer electronic component inspection apparatus which can be used in the inspection method for carrying out the invention.

圖9係顯示在本發明之晶片電子零件之檢査方法中,由各檢査器對各晶片電子零件施加檢査用電壓的時期的圖。 Fig. 9 is a view showing a period in which an inspection voltage is applied to each of the electronic components of the wafer by each of the inspectors in the method for inspecting the electronic component of the wafer of the present invention.

圖10係顯示在習知之晶片電子零件之檢査方法中,由各檢査器對各晶片電子零件施加檢査用電壓的時期的圖。 Fig. 10 is a view showing a period in which a test voltage is applied to each of the electronic components of the wafer by each of the inspectors in the conventional method of inspecting the electronic components of the wafer.

首先,一面參照所附圖示,一面說明可使用 在用以實施本發明之晶片電子零件之檢査方法的檢査裝置的構成例。 First, when you refer to the attached illustration, you can use it. A configuration example of an inspection apparatus for carrying out the inspection method of the electronic component of the wafer of the present invention.

圖1係顯示檢査對象的晶片電容器(晶片電子 零件之一例)的構成例的斜視圖。圖1的晶片電容器19係由:由介電質所成之電容器本體21、及設在其兩端的一對電極22a、22b所構成。晶片電容器19係使用陶瓷作為介電質的晶片陶瓷電容器。電容器本體係由陶瓷所形成,在其內部具備有由電極22a、22b的各個交替且互相平行延伸的複數電極層。本發明之晶片電子零件之檢査方法及檢査裝置的使用尤其有效的晶片電容器19等晶片電子零件係寬幅為0.3mm或其以下,而且長度為0.6mm或其以下之極度微小的晶片電子零件。 Figure 1 shows the wafer capacitor of the inspection object (chip electronics) An oblique view of a configuration example of an example of a part. The wafer capacitor 19 of Fig. 1 is composed of a capacitor body 21 made of a dielectric material and a pair of electrodes 22a and 22b provided at both ends thereof. The wafer capacitor 19 is a wafer ceramic capacitor using ceramic as a dielectric. Capacitor The present system is formed of a ceramic, and is provided therein with a plurality of electrode layers which are alternately and alternately extending in parallel with each other of the electrodes 22a and 22b. The wafer electronic component such as the wafer capacitor 19 which is particularly effective for the inspection of the electronic component of the wafer and the inspection apparatus of the present invention is a wafer electronic component having a width of 0.3 mm or less and an extremely small length of 0.6 mm or less.

圖2係顯示可使用在用以實施本發明之檢査 方法的晶片電子零件檢査裝置的構成例的正面圖。圖3係沿著晶片電子零件保持板11的圓周方向顯示圖2之檢査裝置10的晶片電子零件收容部31的放大剖面圖。圖4係沿著晶片電子零件保持板11的直徑方向將圖2之檢査裝置10的晶片電子零件檢査部32切斷的放大剖面圖。圖5係沿著晶片電子零件保持板11的直徑方向將圖2之檢査裝置10的晶片電子零件排出部33切斷的放大剖面圖。圖6係概略顯示圖2之檢査裝置10之電性連接狀態的區塊圖。接著,圖7係概略顯示圖2之檢査裝置10的電性連 接狀態的電路圖。 Figure 2 shows the inspections that can be used to carry out the invention. A front view of a configuration example of a wafer electronic component inspection apparatus of the method. 3 is an enlarged cross-sectional view showing the chip electronic component housing portion 31 of the inspection apparatus 10 of FIG. 2 along the circumferential direction of the wafer electronic component holding board 11. 4 is an enlarged cross-sectional view showing the wafer electronic component inspection portion 32 of the inspection apparatus 10 of FIG. 2 cut along the diameter direction of the wafer electronic component holding plate 11. Fig. 5 is an enlarged cross-sectional view showing the wafer electronic component discharge portion 33 of the inspection apparatus 10 of Fig. 2 cut along the diameter direction of the wafer electronic component holding plate 11. Fig. 6 is a block diagram schematically showing an electrical connection state of the inspection apparatus 10 of Fig. 2. Next, FIG. 7 is a schematic diagram showing the electrical connection of the inspection apparatus 10 of FIG. The circuit diagram of the connected state.

圖2~圖7所示之晶片電子零件檢査裝置10 係由以下所構成:以板狀材料被形成在可暫時收容晶片電子零件(例如晶片電容器)的二以上的透孔11a互相近接的位置而成的晶片電子零件保持板11;被配置在與晶片電子零件保持板11的各透孔11a的兩開口部近接的位置的一對電極端子12a、12b;與一對電極端子12a、12b的各個作電性連接的檢査器14a、14b;及以對各檢査器供給有關電氣能量及檢査處理的訊號的方式與各檢査器作電性連接的控制器15。 The wafer electronic component inspection device 10 shown in FIGS. 2 to 7 The wafer electronic component holding plate 11 is formed by forming a plate-shaped material at a position where two or more through holes 11a capable of temporarily accommodating a wafer electronic component (for example, a wafer capacitor) are adjacent to each other; a pair of electrode terminals 12a, 12b at positions where the two openings of the through holes 11a of the electronic component holding plate 11 are close to each other; and an inspector 14a, 14b electrically connected to each of the pair of electrode terminals 12a, 12b; Each of the inspectors supplies a controller 15 for electrically connecting the electrical energy and the inspection process to each of the inspectors.

控制器15供給至各檢査器之有關電氣能量的 訊號係各檢査器施加至各晶片電容器之有關檢査用電壓的訊號,以其代表例而言,係列舉指示檢査用電壓施加開始的訊號。 The controller 15 supplies the electrical energy to each of the inspectors The signal is a signal applied to each of the wafer capacitors for the voltage for inspection by each of the inspectors, and a representative example thereof is a signal indicating the start of voltage application for inspection.

控制器15供給至各檢査器之有關檢査處理的 訊號係有關藉由各檢査器所為之各晶片電容器的電氣特性之檢査的訊號,以其代表例而言,係列舉指示藉由來自各檢査器之檢査用電壓的施加而在各晶片電容器所發生的電流的電流值的檢測開始的訊號。 The controller 15 supplies the inspection process to each of the inspectors. The signal is a signal relating to the inspection of the electrical characteristics of the respective chip capacitors by the respective inspectors. For its representative example, the series of indications are generated in the respective chip capacitors by the application of the inspection voltages from the respective inspectors. The current value of the current is detected by the start of the signal.

晶片電子零件檢査裝置10係構成為:由檢査 器14a、14b的各個,透過電極端子12a、12b,對被收容在二以上的透孔11a的晶片電子零件(例如圖4所示之晶片電容器19a、19b、19c、19d、19e、19f)的各個,在預定的時期施加具有互相相同(或大致相同)的頻率的檢査用 電壓,可以各檢査器檢測藉由該檢査用電壓的施加而在各晶片電子零件所發生的電流值。 The wafer electronic component inspection device 10 is configured to be inspected Each of the devices 14a and 14b transmits the chip electronic components (for example, the wafer capacitors 19a, 19b, 19c, 19d, 19e, and 19f shown in FIG. 4) that are accommodated in the two or more through holes 11a through the electrode terminals 12a and 12b. Each of the inspections having the same (or substantially the same) frequency as each other is applied for a predetermined period of time The voltage allows each of the inspectors to detect the current value generated in each of the electronic components of the wafer by the application of the voltage for inspection.

在檢査裝置10中,例如使用靜電電容(電氣 特性)之檢査器,來作為例如晶片電子零件的電氣特性之檢査器14a、14b之各個。 In the inspection device 10, for example, an electrostatic capacitor (electrical The inspector of the characteristics is used as each of the inspectors 14a, 14b of electrical characteristics of, for example, wafer electronic components.

接著上述晶片電子零件檢査裝置10係在前述 控制器15具備有以對被收容在晶片電子零件保持板11的二以上的透孔11a的晶片電子零件的各個施加檢査用電壓的時期不會互相重複的方式進行控制的控制系統15a具有特徵。 Next, the above-described wafer electronic component inspection device 10 is in the foregoing The controller 15 is characterized in that the control system 15a that controls the application of the inspection voltages to the wafer electronic components accommodated in the through-holes 11a of the wafer electronic component holding plate 11 does not overlap each other.

上述「控制系統」意指「記錄有可以對被收 容在晶片電子零件保持板的二以上的透孔的晶片電容器的各個施加電壓的時期不會互相重複的方式進行控制的程式的電子計算機」。 The above "control system" means "the record can be received. The computer of the program that controls the voltages of the wafer capacitors of the two or more through-holes of the wafer electronic component holding plate so as not to overlap each other.

在圖6及圖7所示之晶片電子零件檢査裝置 10中,與一個檢査器作電性連接的晶片電子零件(晶片電容器)為三個。在檢査器14a係透過切換器23a電性連接有三個晶片電容器19a、19b、19c。接著,在檢査器14b係透過切換器23b而電性連接有三個晶片電容器19d、19e、19f。 The wafer electronic component inspection device shown in FIGS. 6 and 7 In 10, three electronic components (wafer capacitors) are electrically connected to one inspector. Three wafer capacitors 19a, 19b, and 19c are electrically connected to the inspector 14a through the switch 23a. Next, the inspector 14b is electrically connected to the three wafer capacitors 19d, 19e, and 19f via the switch 23b.

接著,上述控制器15所具備的控制系統係以 由各檢査器對各晶片電子零件(晶片電容器)施加檢査用電壓的時期全部不會互相重複的方式控制各檢査器。 Next, the control system provided by the controller 15 is Each of the inspectors is controlled such that the time during which the inspection voltage is applied to each of the chip electronic components (wafer capacitors) is not repeated.

圖8係針對可較佳使用在用以實施本發明之 檢査方法的晶片電子零件檢査裝置的基本構成,概略顯示其電性連接狀態的區塊圖。 Figure 8 is intended for use in the practice of the present invention. The basic configuration of the wafer electronic component inspection apparatus of the inspection method is schematically shown as a block diagram of the electrical connection state.

圖8所示之晶片電子零件檢査裝置80的構成 係除了與一個檢査器作電性連接的晶片電子零件(晶片電容器)為一個、及控制器25的控制對象僅為各檢査器(未包含上述切換器)以外,係與圖6所示之晶片電子零件檢査裝置的構成相同。 The composition of the wafer electronic component inspection device 80 shown in FIG. The wafer electronic component (wafer capacitor) is electrically connected to one inspector, and the controller 25 is controlled by only the inspectors (not including the above-mentioned switch). The electronic component inspection device has the same configuration.

在檢査器14a,並未使用如上所述之切換器而 電性連接有一個晶片電容器19a。接著,在檢査器14b係未使用如上所述之切換器而電性連接有一個晶片電容器19b。 In the checker 14a, the switch as described above is not used. A wafer capacitor 19a is electrically connected. Next, a wafer capacitor 19b is electrically connected to the inspector 14b without using the above-described switch.

如上所示,晶片電子零件檢査裝置亦可具有 與一個(各自的)檢査器作電性連接的晶片電子零件為一個的構成。但是,為了減少所使用的檢査器的數量,藉此減低檢査裝置的製造成本,以與一個檢査器作電性連接的晶片電子零件為二以上為佳。 As shown above, the chip electronic component inspection device can also have The electronic components of the wafer electrically connected to one (individual) inspector are one. However, in order to reduce the number of inspectors used, thereby reducing the manufacturing cost of the inspection apparatus, it is preferable that the number of electronic components of the wafer to be electrically connected to one inspector is two or more.

接著,將本發明之晶片電子零件之檢査方法 ,以使用圖2~圖7所示之檢査裝置10,接著進行圖1所示之晶片電容器19之檢査時為代表例來進行說明。 Next, the method for inspecting the electronic component of the wafer of the present invention The inspection apparatus 10 shown in FIGS. 2 to 7 will be described next, and the inspection of the wafer capacitor 19 shown in FIG. 1 will be described as a representative example.

本發明之晶片電子零件之檢査方法係包含將 以藉由同一規格分別顯示預定的同一電氣特性的方式所製造的二以上的檢査對象的晶片電子零件配置在互相近接的位置(具體而言,例如以圓盤狀晶片電子保持板的直徑方向配置在直線上之圖4、圖6、及圖7所示之晶片電容器 19a、19b、19c、19d、19e、19f),將互相獨立的檢査器14a、14b,以檢査器14a檢査晶片電容器19a、19b、19c,且檢査器14b檢査晶片電容器19d、19e、19f的方式,與各晶片電容器作電性連接之後,由各檢査器,對各自的晶片電子零件施加具有互相相同或大致相同的頻率的檢査用電壓,以各檢査器檢測藉由該檢査用電壓的施加而在各晶片電子零件所發生的電流值,藉此檢查檢査對象之各晶片電子零件的電氣特性的檢査方法。 The method for inspecting the electronic parts of the wafer of the present invention includes The electronic components of the wafers of two or more inspection objects which are manufactured by displaying the same predetermined electrical characteristics by the same specification are disposed at positions close to each other (specifically, for example, arranged in the diameter direction of the disk-shaped wafer electronic holding plate) Wafer capacitors shown in Figures 4, 6, and 7 on a straight line 19a, 19b, 19c, 19d, 19e, 19f), the inspectors 14a, 14b independent of each other, the wafer capacitors 19a, 19b, 19c are inspected by the inspector 14a, and the inspectors 14b inspect the wafer capacitors 19d, 19e, 19f After being electrically connected to each of the wafer capacitors, each of the inspectors applies an inspection voltage having the same or substantially the same frequency to each of the chip electronic components, and each of the inspectors detects the application of the inspection voltage. A method of inspecting the electrical characteristics of each of the electronic components of the wafer to be inspected by the current value generated by each of the electronic components of the wafer.

接著,本發明之晶片電子零件之檢査方法係 在不會互相重複的時期實施由各檢査器對各晶片電子零件(晶片電容器)施加檢査用電壓方面具有特徵。 Next, the inspection method of the electronic component of the wafer of the present invention is The inspection voltage is applied to each of the chip electronic components (wafer capacitors) by the respective inspectors at a time when they do not overlap each other.

圖9係顯示在本發明之晶片電子零件之檢査 方法中,由各檢査器對各晶片電容器(晶片電子零件)施加檢査用電壓的時期的圖。在圖9中所記入的橫軸係表示時間。以下係一面參照圖7及圖9,一面進行說明。 Figure 9 is a view showing the inspection of the electronic components of the wafer of the present invention. In the method, a graph of the period during which the inspection voltage is applied to each of the wafer capacitors (wafer electronic components) by each of the inspectors. The horizontal axis indicated in Fig. 9 indicates time. The following description will be made with reference to FIGS. 7 and 9.

檢査器14a係在時間t11至時間t12的期間P11 ,對晶片電容器19a施加檢査用電壓。此外,同樣地,檢査器14a係在時間t21至時間t22的期間P21,對晶片電容器19b施加檢査用電壓。接著同樣地,檢査器14a係在時間t31至時間t32的期間P31,對晶片電容器19c施加檢査用電壓。 Checker lines 14a at time t 11 to the time period t P 11 12, a voltage is applied to the wafer inspection capacitor 19a. Further, similarly, the inspector 14a applies the inspection voltage to the wafer capacitor 19b during the period P 21 from the time t 21 to the time t 22 . Next, in the same manner, the inspector 14a applies the inspection voltage to the wafer capacitor 19c during the period P 31 from the time t 31 to the time t 32 .

檢査器14b係在時間t41至時間t42的期間P41 ,對晶片電容器19d施加檢査用電壓。此外,同樣地,檢査器14b係在時間t51至時間t52的期間P51,對晶片電容 器19e施加檢査用電壓。接著,同樣地,檢査器14b係在時間t61至時間t62的期間P61,對晶片電容器19f施加檢査用電壓。 14b checker 41 is tied to the time t 42 to time t P 41, a voltage is applied to the wafer inspection capacitor 19d. Further, similarly, in line 14b checker time t 51 to the time period t P 51 52, a voltage is applied to the wafer inspection capacitor 19e. Next, in the same manner, based checker 14b at time t 61 to the time period t P 61 62, a voltage is applied to the wafer inspection capacitor 19f.

接著,在上述期間P11,由檢査器14a對晶片 電容器19a施加檢査用電壓,以檢査器14a檢測藉由該檢査用電壓的施加而在晶片電容器19a所發生的電流值,藉此檢查檢査對象的晶片電容器19a的電氣特性(若使用上述檢査裝置10時為靜電電容)。 Then, P 11, 14a is applied to the wafer by the inspection device inspection voltage capacitors 19a to 14a is detected by the inspector checks applied voltage and the current value of the capacitor occurring wafer 19a, whereby the above-described objects during inspection check The electrical characteristics of the wafer capacitor 19a (the electrostatic capacitance is used when the inspection apparatus 10 described above is used).

同樣地,在上述期間P21、P31、P41、P51、P61 的各個,檢查晶片電容器19b、19c、19d、19e、19f的各個的電氣特性(靜電電容)。 Similarly, the electrical characteristics (electrostatic capacitance) of each of the wafer capacitors 19b, 19c, 19d, 19e, and 19f are inspected for each of the above periods P 21 , P 31 , P 41 , P 51 , and P 61 .

如圖9所示,在本發明之晶片電子零件之檢 査方法中,在不會互相重複的時期實施由檢査器14a、14b的各個對各晶片電容器施加檢査用電壓。 As shown in FIG. 9, the electronic component of the wafer of the present invention is inspected. In the inspection method, the inspection voltages are applied to the respective wafer capacitors by the inspectors 14a and 14b at a time when they do not overlap each other.

因此,不會有例如根據在期間P41被施加檢査 用電壓的其他晶片電容器19d所發生的電訊號(電壓或電流)所發生的雜訊混入於在期間P11被施加檢査用電壓的晶片電容器19a所發生的電訊號(電壓或電流),亦即在各個晶片電容器所發生的電訊號互相干擾的情形。 Thus, for example, not in accordance with P 41 is applied during the inspection using the electric signal (voltage or current) voltage of the capacitor 19d of the other wafer occurring noise occurring P 11 is applied mixed into a wafer inspection capacitor voltage during the The electrical signal (voltage or current) that occurs in 19a, that is, the situation in which the electrical signals generated by the individual chip capacitors interfere with each other.

因此,藉由實施本發明之晶片電子零件之檢 査方法,可使用二台以上之檢査器,高速(短時間)且高精度地檢査大量的晶片電子零件的電氣特性(例如晶片電容器的靜電電容)。 Therefore, the inspection of the electronic components of the wafer by the implementation of the present invention In the inspection method, two or more inspectors can be used to inspect the electrical characteristics of a large number of electronic components of the wafer (for example, the electrostatic capacitance of the chip capacitor) at high speed (short time) and with high precision.

以本發明之晶片電子零件之檢査方法(或檢査 裝置)所檢査的電子零件較佳為在相對向的表面具備有一對電極的零件。 Inspection method (or inspection of the electronic component of the wafer of the present invention) The electronic component to be inspected by the device is preferably a component having a pair of electrodes on the opposite surface.

以所被檢査的電子零件的代表例而言,係列 舉晶片電容器、晶片電阻器(包含晶片變阻器)、及晶片感應器。所被檢査的電子零件係以晶片電容器為特佳。 In the representative example of the electronic parts to be inspected, the series Wafer capacitors, chip resistors (including wafer varistors), and wafer sensors. The electronic components to be inspected are particularly excellent in wafer capacitors.

以本發明之晶片電子零件之檢査方法(或檢査 裝置)所檢査的電子零件的電氣特性,意指可根據施加至晶片電子零件的檢査用電壓(交變電壓)的電壓值、及藉由施加該檢査用電壓而在晶片電子零件所發生的電流(交流電流)的電流值所決定的電氣特性。 Inspection method (or inspection of the electronic component of the wafer of the present invention) The electrical characteristics of the electronic component to be inspected means the voltage that can be generated in the electronic component of the wafer according to the voltage value of the inspection voltage (alternating voltage) applied to the electronic component of the wafer, and the voltage applied by the inspection. The electrical characteristics determined by the current value of the (alternating current).

以如上所示之電氣特性的代表例而言,係列 舉靜電電容(電容)、電感、阻抗、導納(admittance)等。 In the representative example of the electrical characteristics shown above, the series Lift electrostatic capacitance (capacitance), inductance, impedance, admittance, etc.

其中,上述測定對象的晶片電子零件的種類 、及所測定的電氣特性並非一定為一對一對應。例如,關於上述晶片電容器以外的晶片電子零件(詳言之係關於晶片電容器以外的晶片電子零件的等效電路所表示的電容器),亦可測定其靜電電容。例如,亦可測定晶片變阻器的靜電電容。 Among them, the types of electronic components of the wafer to be measured And the measured electrical characteristics are not necessarily one-to-one correspondence. For example, regarding the chip electronic component other than the above wafer capacitor (more specifically, the capacitor represented by the equivalent circuit of the chip electronic component other than the wafer capacitor), the electrostatic capacitance can also be measured. For example, the electrostatic capacitance of the wafer varistor can also be determined.

以檢査對象的二以上的晶片電子零件而言, 係使用以顯示預定的同一電氣特性的方式按照同一規格所製造者。 In the case of two or more wafer electronic parts to be inspected, The manufacturer is manufactured according to the same specification in such a manner as to display the predetermined same electrical characteristics.

因此,上述檢査對象的二以上的晶片電子零 件係大多為同一製造批量者,但是亦可在如上所示之同一製造批量的晶片電子零件混合其他批量的晶片電子零件者 。但是,兩者製造批量的晶片電子零件係以互相顯示同一電氣特性的方式按照同一規格所製造者(通常係以互相作為同一製品來進行販賣為目的來製造者)。 Therefore, two or more wafer electronic zeros of the above-mentioned inspection object Most of the parts are of the same manufacturing volume, but other batches of wafer electronic parts can also be mixed in the same manufacturing batch of wafer electronic parts as shown above. . However, the wafer electronic parts which are manufactured in batches are manufactured in accordance with the same specifications so as to display the same electrical characteristics to each other (generally, they are manufactured for the purpose of selling each other as the same product).

藉由將二以上的檢査對象的晶片電子零件收 容在例如檢査裝置10的晶片電子零件保持板11的二以上的透孔11a的各個,可配置在互相近接的位置。 By charging more than two electronic components of the inspection object For example, each of the two or more through holes 11a of the wafer electronic component holding plate 11 of the inspection apparatus 10 can be disposed at a position close to each other.

如前所述,上述「將二以上的檢査對象的晶 片電子零件配置在互相近接的位置」意指「以包含被配置在互相近接的位置的至少二個晶片電子零件的方式配置二以上的檢査對象的晶片電子零件」。 As mentioned above, the above "the crystal of two or more inspection objects" The position where the electronic components are arranged in close proximity to each other means "a wafer electronic component in which two or more inspection targets are arranged so as to include at least two wafer electronic components arranged at positions close to each other".

上述「互相近接的位置」較佳為「二個檢査 對象的晶片電子零件的距離為100mm以下的位置」,以「二個檢査對象的晶片電子零件的距離為50mm以下的位置」為更佳,以「二個檢査對象的晶片電子零件的距離為30mm以下的位置」為特佳。在任何態樣中,均以二個檢査對象的晶片電子零件的距離為1mm以上為更佳。 The above "close to each other" is preferably "two checks" The position of the wafer electronic component of the target is 100 mm or less, and the position of the wafer electronic component of the two inspection targets is 50 mm or less is preferable, and the distance between the electronic components of the two inspection targets is 30 mm. The following locations are particularly good. In any of the aspects, it is more preferable that the distance between the electronic components of the wafers of the two inspection objects is 1 mm or more.

在二以上的檢査對象的晶片電子零件,係由 互相獨立的(各自的)檢査器14a、14b的各個被賦予檢査用電壓。若未使用互相獨立的檢査器(使用一台檢査器),不會發生如前所述在各檢査器所檢測的各晶片電容器的電訊號互相干擾的問題(本發明之解決課題)之故。 In the electronic component of the wafer of two or more inspection objects, Each of the independent (respective) inspectors 14a, 14b is given a voltage for inspection. If the independent checkers (using one checker) are not used, the problem that the electrical signals of the respective chip capacitors detected by the respective checkers interfere with each other (the problem of the present invention) does not occur.

在二以上的檢査對象的晶片電子零件係由各 檢査器被施加具有互相相同或大致相同的頻率的檢査用電壓。 The wafer electronic parts of the inspection object of two or more are each The inspector is applied with an inspection voltage having the same or substantially the same frequency as each other.

被施加至二以上的檢査對象的晶片電子零件 的檢査用電壓互相大致相同,意指各自之檢査用電壓的頻率比其中最低的頻率為高,而且為1.1倍以下,較佳為1.05倍以下的頻率。 Wafer electronic parts applied to two or more inspection objects The voltages for inspection are substantially the same as each other, meaning that the frequency of each of the inspection voltages is higher than the lowest frequency, and is 1.1 times or less, preferably 1.05 times or less.

其中,如前述圖7及圖9所示,晶片電子零 件檢査裝置10在期間P11,可對晶片電容器19a施加檢査用電壓,控制器15係進行如以下所示之控制。 Wherein, as shown in the FIG. 7 and FIG. 9, the electronic components of the wafer inspection apparatus 10 P 11, 19a may be applied to the wafer during inspection of the capacitor voltage, the controller 15 controls the system as shown in the following it.

首先,控制器15係對切換器23a在時間t0供 給指示關閉與晶片電容器19a作電性連接的開閉器24a(形成為電性導通狀態)、打開開閉器24b、24c(形成為電性非導通狀態)的訊號。接著,控制器15係對檢査器14a在時間t11供給指示開始施加檢査用電壓的訊號(有關電氣能量的訊號),而且指示開始檢測在晶片電容器19a所發生的電流的電流值的訊號(有關檢査處理的訊號)。 First, the controller 15 based on the switch 23a at time t 0 is supplied indicating off and the wafer capacitor 19a for a shutter 24a is electrically connected to (formed to electrically conducting state), opens the switches 24b, 24c (formed of electrically non- Signal in the on state). Next, the controller 15 is applied based on the inspector checks 14a t 11 is supplied with a signal indicating the start time of the voltage (electrical signal related to energy), and the detection signal indicating the start of the current value of a current chip capacitor 19a occurred (for Check the processed signal).

此外,控制器15係對切換器23b在時間t0供 給指示關閉與晶片電容器19d作電性連接的開閉器24d(形成為電性導通狀態),打開開閉器24e、24f(形成為電性非導通狀態)的訊號。接著,控制器15係對檢査器14b在時間t41供給指示開始施加檢査用電壓的訊號,而且指示開始檢測在晶片電容器19d所發生的電流的電流值的訊號。 Further, the controller 15 based on the switch 23b at time t 0 is supplied indicating off and the wafer capacitor 19d for the shutter 24d is electrically connected to (formed to electrically conducting state), opens the shutter 24e, 24f (formed of electrically non- Signal in the on state). Next, the system controller 15 is supplied with a voltage signal indicative of the start checker 14b checks applied at time t 41, and the detection signal indicating the start of the current value of a current in the capacitor 19d wafer occurred.

其中,由於在不會互相重複的時期實施:期 間P11中由檢査器14a對晶片電容器19a施加檢査用電壓、及期間P41中由檢査器14b對晶片電容器19d施加檢査用電壓,因此在由結束對晶片電容器19a施加檢査用電壓 的時間t12經過期間D之後的時間t41,開始對晶片電容器19d施加檢査用電壓。 Wherein, since the embodiment will not be repeated in each period: P 11 during application of the inspection by the inspection device 14a of the wafer voltage with the capacitor 19a, and the P 41 14b applied during inspection of the wafer inspection device 19d by the capacitor voltage, so by end 19a is applied to inspection of the wafer by the time the capacitor voltage after the time t 12 after a period D t 41, the wafer inspection starts applying the voltage of the capacitor 19d.

接著同樣地,由於可對晶片電容器19d、晶片 電容器19b、晶片電容器19e、晶片電容器19c、及晶片電容器19f施加檢査用電壓,因此控制器15係進行與上述控制相同的控制。 Then, similarly, since the wafer capacitor 19d, the wafer can be Since the capacitor 19b, the chip capacitor 19e, the wafer capacitor 19c, and the wafer capacitor 19f are applied with the inspection voltage, the controller 15 performs the same control as the above control.

其中,期間S1係從對切換器23a供給上述訊 號之後至開閉器24a關閉為止所需期間(以下稱為「開閉器動作期間」)。亦即,開閉器24a係在時間t11關閉,接著形成為電性導通狀態。同樣地期間S2、S3、S4、S5、S6係分別為開閉器24b、24c、24d、24e、24f的開閉器動作期間。 Here, the period S 1 is a period from the supply of the above-described signal to the switch 23a to the time when the shutter 24a is closed (hereinafter referred to as "the shutter operation period"). That is, the shutter 24a is closed system at time t 11, followed by the formation of electrically conductive state. In the same period, S 2 , S 3 , S 4 , S 5 , and S 6 are the shutter operation periods of the shutters 24b, 24c, 24d, 24e, and 24f, respectively.

接著在本發明之晶片電子零件之檢査方法中 ,較佳為上述各檢査器結束對各晶片電子零件(例如晶片電容器)施加檢査用電壓之後,在根據上述檢査用電壓的電壓值、及施加上述檢査用電壓所檢測到的上述晶片電子零件的電流的電流值,決定該晶片電子零件的電氣特性之前,開始由有別於上述的其他檢査器對有別於上述的其他晶片電子零件施加檢査用電壓。藉此,與以一台檢査器依序檢查二以上的晶片電子零件的情形相比較,用以檢查檢査對象的晶片電子零件的全部所需時間會變短。 Then in the inspection method of the electronic component of the wafer of the present invention Preferably, after each of the inspectors finish applying an inspection voltage to each of the chip electronic components (for example, a wafer capacitor), the electronic component of the wafer is detected based on the voltage value of the inspection voltage and the application of the inspection voltage. Before the current value of the current determines the electrical characteristics of the electronic component of the wafer, the inspection voltage is applied to the other electronic components other than the above by other inspectors different from the above. Thereby, compared with the case where two or more wafer electronic components are sequentially inspected by one inspector, the time required to inspect all of the electronic components of the wafer to be inspected becomes shorter.

如圖7及圖9所示,若使用上述晶片電子零 件檢査裝置10時,檢査器14a係例如對晶片電容器19a,在時間t11開始施加檢査用電壓,接著在時間t12結束施加 檢査用電壓。接著,檢査器14a係根據上述檢査用電壓的電壓值、及藉由該檢査用電壓的施加而在晶片電容器19a所發生的電流的電流值,在時間t13決定晶片電容器的靜電電容(電氣特性)。 7 and 9, when the electronic component using the above-described wafer inspection apparatus 10, based e.g. 14a checker 19a, beginning at time t 11 is applied to the wafer inspection capacitor voltage, then the time t at the end of the inspection voltage is applied 12 . Then, the checker 14a-based voltage value of the voltage and current applied to the current value of the capacitor 19a of the wafer occurring in the inspection by the inspection according to the voltage, the time t of the wafer 13 decides the capacitance of the capacitor (electrical characteristics ).

如上所示,檢査器14a係在上述時間t11與時 間t13之間的期間P12(以下稱為「電氣特性檢査期間」),通常係在時間t12與時間t13之間的期間,根據上述電壓值及電流值,藉由例如資料處理(運算處理)來決定靜電電容。其中,期間P22、P32、P42、P52、P62係分別為晶片電容器19b、19c、19d、19e、19f的電氣特性檢査期間。 As described above, the checker 14a is in the period P 12 (hereinafter referred to as "electrical characteristic inspection period") between the time t 11 and the time t 13 , and is usually between the time t 12 and the time t 13 . The electrostatic capacitance is determined by, for example, data processing (arithmetic processing) based on the voltage value and the current value. Here, the periods P 22 , P 32 , P 42 , P 52 , and P 62 are electrical characteristic inspection periods of the wafer capacitors 19 b , 19 c , 19 d , 19 e , and 19 f , respectively.

接著,如上所述,檢査器14a在時間t12結束 對晶片電容器19a施加檢査用電壓之後,在時間t13根據上述電壓值及電流值來決定電容器的靜電電容(電氣特性)之前,具體而言,在時間t41,開始由有別於上述之其他檢査器14b對有別於上述之其他晶片電容器19d施加檢査用電壓。 Subsequently, as described above, the end 14a t checker 12 is applied at the time of inspection with the wafer after the voltage of the capacitor 19a, to determine the time before the capacitance 13 (electrical characteristics) of the capacitor based on the voltage value and the current value of t, specifically , at time t 41, is different from the start of application of inspecting the other checker 14b on the other is different from the above-described wafer with the voltage of the capacitor 19d.

亦即,結束對晶片電容器19a施加檢査用電 壓的時間t12、與開始對接下來的晶片電容器19d施加檢査用電壓的時間t41之間的期間D係較佳為上述時間t12與檢査器14a決定晶片電容器19a的靜電電容的時間t13之間的期間為短。 That is, the end of the capacitor 19a is applied to a wafer inspection time t 12 is the voltage, applied to the start of the next wafer inspection capacitor 19d with the time period t of the voltage between lines 41 D 12 is preferably the aforementioned time t and the checker 14a The period between the times t 13 at which the electrostatic capacitance of the wafer capacitor 19a is determined is short.

同樣地,上述檢査器14b在時間t42結束對晶 片電容器19d施加檢査用電壓之後,在時間t43決定晶片電容器19d的靜電電容之前,具體而言在時間t21開始由 有別於上述的其他檢査器14a對有別於上述的其他晶片電容器19b施加檢査用電壓。接著以下亦藉由相同的順序,開始對晶片電容器19e、晶片電容器19c、接著晶片電容器19f施加檢査用電壓。 Similarly, the inspection device 14b at time t 42 after the end of the voltage, prior to time t 43 determines the capacitance of the capacitor 19d of the wafer, the wafer inspection is applied particularly in terms of the capacitor 19d starting from the time t 21 is different from the above-described other The inspector 14a applies an inspection voltage to the other wafer capacitors 19b different from the above. Next, the inspection voltage is applied to the wafer capacitor 19e, the wafer capacitor 19c, and the subsequent wafer capacitor 19f in the same order.

圖10係顯示在習知之晶片電子零件之檢査方 法中,若檢査合計6個晶片電子零件19a、19b、19c、19d、19e、19f時,由各檢査器對各晶片電容器(晶片電子零件)施加檢査用電壓的時期的圖。圖10中所記入的橫軸係表示時間。 Figure 10 is a diagram showing the inspection of conventional electronic components of wafers. In the method, when a total of six chip electronic components 19a, 19b, 19c, 19d, 19e, and 19f are inspected, a time period during which an inspection voltage is applied to each wafer capacitor (wafer electronic component) by each inspector is shown. The horizontal axis indicated in Fig. 10 indicates time.

檢査器14a係在時間t11至時間t12的期間P11 ,對晶片電容器19a施加檢査用電壓。而且,同樣地,檢査器14a係在時間t21至時間t22的期間P21,對晶片電容器19b施加檢査用電壓。接著同樣地,檢査器14a係在時間t31至時間t32的期間P31,對晶片電容器19c施加檢査用電壓。 Checker lines 14a at time t 11 to the time period t P 11 12, a voltage is applied to the wafer inspection capacitor 19a. Further, similarly, the inspector 14a applies the inspection voltage to the wafer capacitor 19b during the period P 21 from the time t 21 to the time t 22 . Next, in the same manner, the inspector 14a applies the inspection voltage to the wafer capacitor 19c during the period P 31 from the time t 31 to the time t 32 .

檢査器14b係在時間t41至時間t42的期間P41 ,對晶片電容器19d施加檢査用電壓。而且,同樣地,檢査器14b係在時間t51至時間t52的期間P51,對晶片電容器19e施加檢査用電壓。接著同樣地,檢査器14b係在時間t61至時間t62的期間P61,對晶片電容器19f施加檢査用電壓。 14b checker 41 is tied to the time t 42 to time t P 41, a voltage is applied to the wafer inspection capacitor 19d. Further, similarly, the inspector 14b applies the inspection voltage to the wafer capacitor 19e during the period P 51 from the time t 51 to the time t 52 . Subsequently Likewise, checker 14b at time t 61 to the line time period t P 61 62, a voltage is applied to the wafer inspection capacitor 19f.

在使用圖10所說明之習知之晶片電子零件之 檢査方法中,使用二以上的檢査器的目的在於在互相重複的時期對二個晶片電容器(晶片電子零件)施加檢査用電壓 ,以各二個同時檢查晶片電容器的靜電電容,藉此縮短檢査時間。 Using the conventional chip electronic parts illustrated in FIG. In the inspection method, the purpose of using two or more inspectors is to apply an inspection voltage to two wafer capacitors (wafer electronic parts) at mutually overlapping times. The electrostatic capacitance of the wafer capacitor is simultaneously checked by each of the two, thereby shortening the inspection time.

例如,在互相重複的時期實施期間P11中由檢 査器14a對晶片電容器19a施加檢査用電壓、及期間P41中由檢査器14b對晶片電容器19d施加檢査用電壓,藉此實現在高速(短時間)下的檢査。 For example, P. 11 during the period of overlap and applied by the inspector embodiment 14a of the wafer inspection voltage capacitor 19a, and the voltage is 41 14b applied during inspection by the inspection device P on the wafer capacitors 19d, thereby achieving high speed (short Check under time).

但是,如前所述,例如,根據在期間P41被施 加檢査用電壓的晶片電容器19d所發生的電訊號(電壓或電流)所發生的雜訊會混入於在期間P11被施加檢査用電壓的晶片電容器19a所發生的電訊號(電壓或電流)。此外,在晶片電容器19d所發生的電訊號亦混入根據在晶片電容器19a所發生的電訊號所發生的雜訊。亦即在各個晶片電容器所發生的電訊號會互相干擾。同樣地,在晶片電容器19b、19e所發生的電訊號亦互相干擾,而且在晶片電容器19c、19f所發生的電訊號亦互相干擾。 However, as described above, e.g., according to P 41 is applied during the inspection of electrical signals (voltage or current) voltage of the capacitor 19d of the wafer occurring occurring noise may be mixed into P 11 voltage applied during inspection The electrical signal (voltage or current) generated by the chip capacitor 19a. Further, the electric signal generated in the wafer capacitor 19d is also mixed with noise generated in accordance with the electric signal generated at the wafer capacitor 19a. That is, the electrical signals generated in the respective chip capacitors interfere with each other. Similarly, the electrical signals generated at the wafer capacitors 19b, 19e also interfere with each other, and the electrical signals generated at the wafer capacitors 19c, 19f also interfere with each other.

因此,在習知之晶片電子零件之檢査方法中 ,係可使用二台或二台以上之檢査器來高速(短時間)檢査二以上的晶片電容器的電氣特性。例如圖10所示,可在時間t0與時間t1之間的期間(時間)檢査6個晶片電容器。 但是,如上所述,由於在各晶片電容器所發生的電訊號互相干擾,因此各個晶片電容器的電氣特性的檢査精度會降低。 Therefore, in the conventional inspection method of the chip electronic component, two or more inspectors can be used to check the electrical characteristics of two or more wafer capacitors at high speed (short time). For example as shown in FIG. 10, the time t and t 0 between 1 (time) wafer inspection capacitor 6 at a time. However, as described above, since the electrical signals generated in the respective wafer capacitors interfere with each other, the inspection accuracy of the electrical characteristics of the respective wafer capacitors is lowered.

相對於此,在本發明之晶片電子零件之檢査 方法中,係如圖9所示,例如,在時間t0與時間t2之間 的期間(時間)檢査6個晶片電容器。因此,與上述習知之晶片電子零件之檢査方法相比較,在本發明之晶片電子零件之檢査方法中,檢査所需時間係較長(時間t2>時間t1)。但是,在本發明之晶片電子零件之檢査方法中,由於在不會互相重複的時期實施對檢査對象的晶片電容器施加檢査用電壓,因此如上所述,不會有在各晶片電容器所發生的電訊號互相干擾的情形。因此,藉由實施本發明之檢査方法,若與上述習知之晶片電子零件之檢査方法相比較,雖然檢査時間稍微長,但是可使用二台以上之檢査器來高速(短時間)且高精度地檢査大量的晶片電容器(晶片電子零件)的電氣特性。 In contrast, in a wafer inspection method of the electronic part of the present invention, the system shown in FIG. 9, for example, at time t 0 and time t (time) during the check of the capacitor 6 between the two wafers. Therefore, in the inspection method of the electronic component of the wafer of the present invention, the time required for inspection is long (time t 2 > time t 1 ) as compared with the above-described inspection method of the wafer electronic component. However, in the method for inspecting the electronic component of the wafer of the present invention, since the inspection voltage is applied to the wafer capacitor to be inspected at a time when the wafer electronic component is not overlapped with each other, as described above, there is no telecommunications generated in each wafer capacitor. The situation where the numbers interfere with each other. Therefore, by performing the inspection method of the present invention, the inspection time is slightly longer than that of the above-described inspection method of the wafer electronic component, but two or more inspection apparatuses can be used for high speed (short time) and high precision. Check the electrical characteristics of a large number of wafer capacitors (wafer electronic parts).

以下係詳加說明被使用在用以實施本發明之 晶片電子零件之檢査方法的檢査裝置(本發明之晶片電子零件之檢査裝置)的構成與較佳實施態樣。 The following detailed description is used to implement the present invention. The configuration of the inspection apparatus for the inspection method of the electronic component of the wafer (the inspection apparatus for the electronic component of the wafer of the present invention) and the preferred embodiment.

圖2所示之晶片電子零件檢査裝置10所具備 的晶片電子零件保持板11在其形狀並未特別限制,但是通常設定為圓盤狀的形狀。 The chip electronic component inspection device 10 shown in FIG. 2 is provided The shape of the wafer electronic component holding plate 11 is not particularly limited, but is usually set to a disk shape.

晶片電子零件保持板11的二以上的透孔11a 係在晶片電子零件保持板的表面,在複數同心圓上,配置在將該同心圓作等分割的位置。 Two or more through holes 11a of the wafer electronic component holding plate 11 It is placed on the surface of the electronic component holding plate of the wafer, and is placed on a plurality of concentric circles at a position where the concentric circles are equally divided.

在晶片電子零件檢査裝置10中,係按被收容 在於晶片電子零件保持板11的中心與周緣之間以直徑方向排列之合計6個透孔的6個晶片電子零件的每個,進行晶片電容器的電氣特性的檢査。在晶片電子零件保持板 11的中心與周緣之間以直徑方向排列之透孔數較佳為2~20個範圍內,更佳為4~12個範圍內。 In the wafer electronic component inspection device 10, the button is received Each of the six wafer electronic components having a total of six through holes arranged in the diameter direction between the center and the periphery of the wafer electronic component holding plate 11 is used to inspect the electrical characteristics of the wafer capacitor. Chip electronic component holding plate The number of through holes arranged in the diameter direction between the center and the periphery of 11 is preferably in the range of 2 to 20, more preferably in the range of 4 to 12.

晶片電子零件保持板11係可透過例如底板45 、及中心軸42作旋轉的方式被設置(固定)在基台41,使被配設在其背面側的旋轉驅動裝置43作動,藉此將中心軸42的周圍間歇性地進行旋轉。其中,晶片電子零件保持板11「間歇性地進行旋轉」意指按照將以晶片電子零件保持板11的旋轉方向(旋轉的圓周方向)互相鄰接的二個透孔的各個、及晶片電子零件保持板11的旋轉的中心位置相連結的二條直線所形成的每個角度(銳角)進行旋轉。 The chip electronic component holding plate 11 is permeable to, for example, the bottom plate 45 The center shaft 42 is rotated (fixed) on the base 41, and the rotation driving device 43 disposed on the back side thereof is actuated to intermittently rotate the periphery of the center shaft 42. Here, the "discontinuous rotation of the wafer electronic component holding plate 11" means that each of the two through holes adjacent to each other in the rotation direction (rotational circumferential direction) of the wafer electronic component holding plate 11 and the wafer electronic parts are held. Each angle (an acute angle) formed by two straight lines connected by the center position of the rotation of the plate 11 is rotated.

在晶片電子零件保持板11的透孔的各個,係 在晶片電子零件收容部31中,暫時收容有檢査對象的晶片電容器(晶片電子零件),俾以檢査其電氣特性。 In each of the through holes of the wafer electronic component holding plate 11, In the wafer electronic component housing portion 31, the wafer capacitor (wafer electronic component) to be inspected is temporarily accommodated, and the electrical characteristics thereof are examined.

如圖3所示,在晶片電子零件收容部31係在 上述晶片電子零件保持板11的前方側(圖3中為左側)配設有晶片電子零件保持蓋件44。在晶片電子零件保持板11的後方側(圖3中為右側)係配設有底板45。在底板45係分別形成有在晶片電子零件保持板11之側的表面形成開口的複數氣體排出通路45a。各自的氣體排出通路係與氣體排出裝置(代表例為真空泵)46相連接。若使氣體排出裝置46進行作動時,由氣體排出通路45a被排出氣體,晶片電子零件保持板11與底板45之間的間隙成為被減壓的狀態(成為小於大氣壓的壓力)。 As shown in FIG. 3, the wafer electronic component housing portion 31 is attached to A wafer electronic component holding cover 44 is disposed on the front side (the left side in FIG. 3) of the wafer electronic component holding plate 11. A bottom plate 45 is disposed on the rear side (the right side in FIG. 3) of the wafer electronic component holding plate 11. In the bottom plate 45, a plurality of gas discharge passages 45a having openings formed on the surface of the wafer electronic component holding plate 11 are formed, respectively. The respective gas discharge passages are connected to a gas discharge device (representatively, a vacuum pump) 46. When the gas discharge device 46 is actuated, the gas is exhausted from the gas discharge passage 45a, and the gap between the wafer electronic component holding plate 11 and the bottom plate 45 is decompressed (a pressure lower than atmospheric pressure).

接著,使晶片電子零件保持板11一面以圖3 所記入的箭號49所示方向間歇性進行旋轉,一面藉由晶片電子零件供給裝置(圖2:47)對晶片電子零件保持蓋件44的內側供給晶片電容器19,且使氣體排出裝置46進行作動而使晶片電子零件保持板11與底板45之間的間隙形成為減壓狀態。藉此,晶片電容器暫時被收容在晶片電子零件保持板11的各個的透孔11a。其中,晶片電子零件保持板11與底板45之間的間隙係成為被減壓的狀態,因此若被收容在晶片電子零件保持板11的晶片電容器19移動至比圖3中最為上方的氣體排出通路45a更為上方的位置時,亦不會有晶片電容器19由透孔11a出現而落下的情形。 Next, the wafer electronic component holding plate 11 is on one side as shown in FIG. The direction indicated by the arrow 49 is intermittently rotated, and the wafer capacitor 19 is supplied to the inside of the wafer electronic component holding cover 44 by the chip electronic component supply device (Fig. 2: 47), and the gas discharge device 46 is caused to perform the gas discharge device 46. The gap between the wafer electronic component holding plate 11 and the bottom plate 45 is actuated to be in a reduced pressure state. Thereby, the wafer capacitors are temporarily housed in the respective through holes 11a of the wafer electronic component holding plate 11. Since the gap between the wafer electronic component holding plate 11 and the bottom plate 45 is decompressed, the wafer capacitor 19 accommodated in the chip electronic component holding plate 11 is moved to the gas discharge path which is the uppermost than that in FIG. When the position of 45a is higher, there is no case where the wafer capacitor 19 is dropped by the through hole 11a.

藉由上述晶片電子零件保持板11的間歇性的 旋轉移動,被收容在晶片電子零件保持板的透孔的晶片電容器係被送至圖2及圖4所示之晶片電子零件檢査裝置10的晶片電子零件檢査部32。 Intermittent by the above-mentioned wafer electronic component holding plate 11 The wafer capacitor that is accommodated in the through hole of the wafer electronic component holding plate is transferred to the wafer electronic component inspection unit 32 of the wafer electronic component inspection device 10 shown in FIGS. 2 and 4 .

如圖4所示,由於將各晶片電容器與其電氣 特性之檢査器作電性連接,因此在與晶片電子零件保持板的各透孔11a的兩開口部近接的位置配置有一對電極端子12a、12b。 As shown in Figure 4, due to the electrical capacitors of each wafer Since the characteristic inspector is electrically connected, a pair of electrode terminals 12a and 12b are disposed at a position close to both opening portions of the through holes 11a of the wafer electronic component holding plate.

電極端子12a係透過被配設在其周圍的電性 絕緣性的筒體51被固定在底板45。電極端子12a及底板45的晶片電子零件保持板11之側的表面係以形成一個平滑平面的方式被施行例如研磨加工。 The electrode terminal 12a transmits electricity electrically disposed around it The insulating cylinder 51 is fixed to the bottom plate 45. The surface of the electrode terminal 12a and the bottom plate 45 on the side of the wafer electronic component holding plate 11 is subjected to, for example, a polishing process so as to form a smooth plane.

電極端子12b係被固定在電極端子支持板53 。電極端子支持板53係被固定在直動驅動裝置(圖2:54)。 The electrode terminal 12b is fixed to the electrode terminal support plate 53 . The electrode terminal support plate 53 is fixed to the linear motion driving device (Fig. 2: 54).

使上述直動驅動裝置作動,且使電極端子支 持板53移動至晶片電子零件保持板11之側,藉此被支持在電極端子支持板53的各電極端子12b亦另外移動至晶片電子零件保持板11之側。藉此,各晶片電容器係被夾在電極端子12a、12b之間。因此,各晶片電容器的電極22a係與電極端子12a作電性連接,而且電極22b係與電極端子12b作電性連接。藉此,各晶片電容器係透過一對電極端子12a、12b而與各檢査器作電性連接。 Actuating the above-mentioned linear driving device and making the electrode terminal branch The holding plate 53 is moved to the side of the wafer electronic component holding plate 11, whereby the electrode terminals 12b supported on the electrode terminal supporting plate 53 are additionally moved to the side of the wafer electronic component holding plate 11. Thereby, each wafer capacitor is sandwiched between the electrode terminals 12a and 12b. Therefore, the electrode 22a of each wafer capacitor is electrically connected to the electrode terminal 12a, and the electrode 22b is electrically connected to the electrode terminal 12b. Thereby, each of the wafer capacitors is electrically connected to each of the inspectors through the pair of electrode terminals 12a and 12b.

其中,與配置一對電極端子的晶片電子零件 保持板的各透孔的兩開口部「近接的位置」意指當晶片電子零件被收容在各透孔時,各電極端子與各晶片電子零件作電性連接的位置,或者若形成為各電極端子可移動的構成時,藉由使各電極端子移動,可與各晶片電子零件作電性連接的位置。 Wherein, the chip electronic component is configured with a pair of electrode terminals The "opening position" of the two opening portions of each of the through holes of the holding plate means a position at which the electrode terminals are electrically connected to the electronic components of the respective chips when the electronic components of the chip are accommodated in the respective through holes, or if they are formed as electrodes When the terminal is movable, the electrode terminals can be electrically connected to the electronic components of the wafer by moving the electrode terminals.

接著,在晶片電子零件檢査部32,按照以晶 片電子零件保持板11的直徑方向排列成一列的6個晶片電容器19a、19b、19c、19d、19e、19f的每個,依照上述本發明之檢査方法,檢查其電氣特性。 Next, in the wafer electronic component inspection unit 32, according to the crystal Each of the six wafer capacitors 19a, 19b, 19c, 19d, 19e, and 19f arranged in a row in the diameter direction of the electronic component holding plate 11 is inspected for electrical characteristics in accordance with the above-described inspection method of the present invention.

圖7所示之晶片電子零件檢査裝置10所具備 之檢査器14a、14b為靜電電容之檢査器。檢査器14a、14b係分別具備有電源55、電壓計56、及電流計57。在電源55所發生的檢査用電壓係透過切換器23a或切換器 23b而被施加至各晶片電容器。檢査用電壓的電壓值係藉由電壓計56予以測定。藉由檢査用電壓的賦予,在各晶片電容器所發生的電流的電流值係藉由電流計57予以測定。為了高精度測定上述電壓值及電流值,在各檢査器具備有放大器58及電阻器59。 The chip electronic component inspection device 10 shown in FIG. 7 is provided The inspectors 14a and 14b are electrostatic capacitance inspectors. The inspectors 14a and 14b are respectively provided with a power source 55, a voltmeter 56, and an ammeter 57. The voltage for inspection generated at the power source 55 is transmitted through the switch 23a or the switch 23b is applied to each wafer capacitor. The voltage value of the voltage for inspection is measured by a voltmeter 56. The current value of the current generated in each wafer capacitor is measured by the ammeter 57 by the application of the voltage for inspection. In order to measure the voltage value and the current value with high precision, an amplifier 58 and a resistor 59 are provided in each of the inspectors.

其中,亦可在圖2所示之晶片電子零件檢査 裝置的晶片電子零件檢査部32的圓周方向,另外配設與其他檢査器(有別於上述檢査器14a、14b之檢査電氣特性的檢査器)作電性連接的一對電極端子。 Among them, the electronic component inspection of the wafer shown in Figure 2 In the circumferential direction of the wafer electronic component inspection unit 32 of the apparatus, a pair of electrode terminals electrically connected to other inspectors (inspectors different from the inspection electrical characteristics of the inspection instruments 14a and 14b) are disposed.

檢査電氣特性的晶片電容器係藉由晶片電子 零件保持板11的間歇性旋轉移動,被送至圖2及圖5所示之晶片電子零件檢査裝置10的晶片電子零件排出部33。 Wafer capacitors for checking electrical characteristics are based on wafer electronics The intermittent rotational movement of the component holding plate 11 is sent to the wafer electronic component discharge portion 33 of the wafer electronic component inspection device 10 shown in FIGS. 2 and 5.

如圖5所示,在晶片電子零件排出部33係在 上述晶片電子零件保持板11的前方側(圖5中為下側)配設形成有複數個透孔61a的管件支持蓋件61。在管件支持蓋件61的透孔61a的各個係連接有構成晶片電容器(例如晶片電容器19a)的通路的管件62。但是,在圖2中,僅記入與管件支持蓋件61的透孔61a的各個相連接之管件62之中的一部分管件。 As shown in FIG. 5, the wafer electronic component discharge portion 33 is attached to A tube support cover member 61 in which a plurality of through holes 61a are formed is disposed on the front side (the lower side in FIG. 5) of the wafer electronic component holding plate 11. A tube member 62 constituting a passage of a wafer capacitor (for example, the wafer capacitor 19a) is connected to each of the through holes 61a of the tube support cover member 61. However, in Fig. 2, only a part of the tubes of the tubes 62 connected to the respective through holes 61a of the tube supporting cover member 61 are recorded.

此外,在被配置在晶片電子零件保持板11的 後方側(圖5中為上側)的底板45,分別形成有在晶片電子零件保持板11之側的表面形成開口的複數氣體供給通路45b。各自的氣體供給通路45b係與加壓氣體供給裝置63相連接。 Further, in the wafer electronic component holding plate 11 The bottom plate 45 on the rear side (upper side in FIG. 5) is formed with a plurality of gas supply passages 45b each having an opening formed on the surface of the wafer electronic component holding plate 11. The respective gas supply passages 45b are connected to the pressurized gas supply device 63.

若使加壓氣體供給裝置63作動,加壓氣體被供給至氣體供給通路45b,例如加壓氣體被噴射至被收容在晶片電子零件保持板11的透孔11a的晶片電容器19a。藉此,晶片電容器係被排出至管件62。 When the pressurized gas supply device 63 is actuated, the pressurized gas is supplied to the gas supply path 45b. For example, the pressurized gas is ejected to the wafer capacitor 19a accommodated in the through hole 11a of the wafer electronic component holding plate 11. Thereby, the wafer capacitor is discharged to the tube member 62.

例如,上述晶片電容器19a係在圖2所示之管件支持蓋件61所形成的複數個透孔61a之中,通過位於最為外周側之合計10個透孔61a。該10個透孔61a係分別透過管件62而與晶片電子零件收容容器64相連接。 For example, the wafer capacitor 19a is formed in a plurality of through holes 61a formed by the pipe support cover member 61 shown in Fig. 2, and has a total of ten through holes 61a located on the outermost peripheral side. The ten through holes 61a are connected to the chip electronic component storage container 64 through the tube member 62, respectively.

因此,上述晶片電容器19a係透過與上述管件支持蓋件61的10個透孔61a相連接之合計10支管件62的任一者,被收容在按照所檢査出的電氣特性的晶片電子零件收容容器64。 Therefore, the wafer capacitor 19a is transmitted through one of the total of ten tube members 62 connected to the ten through holes 61a of the tube support cover member 61, and is housed in a wafer electronic component storage container according to the checked electrical characteristics. 64.

14a、14b‧‧‧檢査器 14a, 14b‧‧‧ inspector

Claims (6)

一種晶片電子零件之檢査方法,其係包含以下工程之進行檢査對象之各晶片電子零件的電氣特性的檢査的晶片電子零件之檢査方法:在具備有以互相隔著間隔形成四列以上的同心圓的方式配置在圓盤上的透孔的群組,其中各列的透孔係位於由中心軸朝半徑方向延伸的直線上,且以可繞中心軸旋轉的方式被軸支在基台的晶片電子零件保持板的透孔的群組,收容以分別根據同一規格顯示預定的同一電氣特性的方式所製造的二以上的檢査對象的晶片電子零件的工程;將檢査器與該晶片電子零件的各個作電性連接的工程;接著由檢査器,對各自的晶片電子零件施加具有互相相同或大致相同的頻率的檢査用電壓,以檢査器檢測藉由該檢査用電壓的施加而在各晶片電子零件所發生的電流值的工程,其特徵為:使用二台以上的檢查器,針對配置在位於由中心軸朝半徑方向延伸的直線上的透孔的群組的晶片電子零件,在各檢查器之間,在不會互相重複的時期依序進行由各檢査器對晶片電子零件施加檢査用電壓。 A method for inspecting a chip electronic component, comprising: a method of inspecting a chip electronic component for inspecting electrical characteristics of each of the chip electronic components to be inspected in the following process: forming a concentric circle of four or more columns at intervals The arrangement of the through holes in the disc, wherein the through holes of each column are located on a straight line extending from the central axis in a radial direction, and are supported by the base wafer in such a manner as to be rotatable about the central axis The group of the through holes of the electronic component holding plate accommodates the processing of the wafer electronic components of the two or more inspection objects which are manufactured by displaying the same predetermined electrical characteristics according to the same specification; and each of the inspection device and the electronic component of the wafer a process of electrically connecting; then, an inspector applies an inspection voltage having the same or substantially the same frequency to each of the chip electronic components, and the inspector detects the electronic component on each of the wafers by the application of the inspection voltage The engineering of the current value that occurs is characterized by the use of more than two inspectors, for the configuration located at the center axis Extending in the radial direction of the through hole group on a straight line wafer electronic component, between the inspector, are sequentially performed in each examination period does not overlap and applying a voltage to the wafer inspection of electronic parts. 如申請專利範圍第1項之晶片電子零件之檢査方法,其中,透孔的群組以形成六列的同心圓的方式被配置在圓盤上,接近圓盤外周的三列透孔的群組所保持的晶片電子零件的檢査係藉由具備有合計三對電極端子的檢査器A來進行,接著接近圓盤的中心軸的三列透孔群所保持的晶 片電子零件的檢査係藉由具備有合計三對電極端子的檢査器B來進行。 The method for inspecting an electronic component for a wafer according to the first aspect of the invention, wherein the group of the through holes is arranged on the disk in a manner of forming six rows of concentric circles, and the group of three rows of through holes near the outer circumference of the disk The inspection of the held electronic parts of the wafer is performed by an inspector A having a total of three pairs of electrode terminals, and then the crystals held by the three rows of through-hole groups close to the central axis of the disk The inspection of the chip electronic components is performed by providing the inspector B having a total of three pairs of electrode terminals. 如申請專利範圍第1項之晶片電子零件之檢査方法,其中,以透孔的群組形成八列同心圓的方式被配置在圓盤上,接近圓盤外周的四列透孔的群組所保持的晶片電子零件的檢査係藉由具備有合計四對電極端子的檢査器A來進行,接著接近圓盤的中心軸的四列透孔群所保持的晶片電子零件的檢査係藉由具備有合計四對電極端子的檢査器B來進行。 The method for inspecting an electronic component for a wafer according to the first aspect of the invention, wherein the group of the through holes is formed in a manner of forming eight rows of concentric circles on the disk, and the group of four rows of through holes near the outer periphery of the disk is The inspection of the held electronic parts of the wafer is performed by the inspector A having the total of four pairs of electrode terminals, and then the inspection of the electronic components of the wafer held by the four rows of the through-hole groups close to the central axis of the disk is provided. The inspector B of the four pairs of electrode terminals is collectively performed. 如申請專利範圍第1項之晶片電子零件之檢査方法,其中,所被檢査的晶片電子零件為在相對向的表面具備有一對電極的零件。 The method of inspecting a wafer electronic component according to the first aspect of the invention, wherein the electronic component to be inspected is a component having a pair of electrodes on a facing surface. 如申請專利範圍第1項之晶片電子零件之檢査方法,其中,所被檢査的晶片電子零件為晶片電容器。 The method for inspecting a chip electronic component according to claim 1, wherein the electronic component to be inspected is a wafer capacitor. 一種晶片電子零件之檢査裝置,其係包含:具備有以互相隔著間隔形成四列以上的同心圓的方式配置在圓盤上的透孔的群組,其中各列的透孔係位於由中心軸朝半徑方向延伸的直線上,且以可繞中心軸旋轉的方式被軸支在基台的晶片電子零件保持板;被配置在與該晶片電子零件保持板的各透孔的兩開口部近接的位置的一對電極端子;與該一對電極端子的各個作電性連接的二台以上的檢査器;及以對各檢査器供給有關電氣能量及檢査處理的訊號的方式與各檢査器作電性連接的控制器,由各檢査器透過電極端子,對被收容在晶片電子零件保持板之位於由中心軸 朝半徑方向延伸的直線上的透孔的群組的晶片電子零件的各個,依序施加具有互相相同或大致相同的頻率的檢査用電壓,可以各檢査器檢測藉由該檢査用電壓的施加而在各晶片電子零件所發生的電流值的晶片電子零件檢査裝置,其特徵為:在該控制器具備有以對被收容在晶片電子零件保持板之位於由中心軸朝半徑方向延伸的直線上的透孔的群組的晶片電子零件的各個施加檢査用電壓的時期在各檢查器之間不會互相重複的方式進行控制的控制系統。 An inspection apparatus for a chip electronic component, comprising: a group of through holes arranged on a disk so as to form four or more concentric circles at intervals with each other, wherein each column of the through holes is located at a center a wafer electronic component holding plate axially supported on the base extending in a radial direction and rotatable about the central axis; disposed adjacent to both openings of the through holes of the electronic component holding plate of the wafer a pair of electrode terminals at a position; two or more inspectors electrically connected to the pair of electrode terminals; and a method of supplying electrical energy and inspection processing to each inspector and each inspector The electrically connected controller is passed through the electrode terminal by each inspector, and the pair is placed on the wafer electronic component holding plate located at the central axis Each of the wafer electronic components of the group of the through holes on the straight line extending in the radial direction is sequentially applied with an inspection voltage having the same or substantially the same frequency, and each of the inspectors can detect the application of the voltage for the inspection. A wafer electronic component inspection apparatus for a current value generated in each electronic component of a wafer, characterized in that the controller is provided with a pair of wires which are accommodated in the electronic component holding plate of the wafer and which are located in a radial direction extending from the central axis A control system for controlling the voltage of each of the wafer electronic parts of the group of through holes to be controlled so as not to overlap each other between the inspectors.
TW102125113A 2012-07-10 2013-07-10 Chip electronic components inspection methods and inspection equipment TWI598598B (en)

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