TWI597859B - 用於封裝一入射輻射檢測器的方法及封裝的入射輻射檢測器 - Google Patents
用於封裝一入射輻射檢測器的方法及封裝的入射輻射檢測器 Download PDFInfo
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- TWI597859B TWI597859B TW100138076A TW100138076A TWI597859B TW I597859 B TWI597859 B TW I597859B TW 100138076 A TW100138076 A TW 100138076A TW 100138076 A TW100138076 A TW 100138076A TW I597859 B TWI597859 B TW I597859B
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- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/804—Containers or encapsulations
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
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Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US40562110P | 2010-10-21 | 2010-10-21 | |
| US13/275,635 US8809784B2 (en) | 2010-10-21 | 2011-10-18 | Incident radiation detector packaging |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201234633A TW201234633A (en) | 2012-08-16 |
| TWI597859B true TWI597859B (zh) | 2017-09-01 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW100138076A TWI597859B (zh) | 2010-10-21 | 2011-10-20 | 用於封裝一入射輻射檢測器的方法及封裝的入射輻射檢測器 |
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| CN103728025A (zh) * | 2012-10-10 | 2014-04-16 | 中国科学院微电子研究所 | 一种非制冷红外成像焦平面阵列探测器 |
| US8736045B1 (en) * | 2012-11-02 | 2014-05-27 | Raytheon Company | Integrated bondline spacers for wafer level packaged circuit devices |
| US9673169B2 (en) | 2013-02-05 | 2017-06-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and apparatus for a wafer seal ring |
| US9287188B2 (en) * | 2013-02-05 | 2016-03-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and apparatus for a seal ring structure |
| JP2014186006A (ja) * | 2013-03-25 | 2014-10-02 | Toshiba Corp | 赤外線撮像装置および赤外線撮像モジュール |
| NO2944700T3 (enExample) | 2013-07-11 | 2018-03-17 | ||
| EP3051582B1 (en) * | 2013-09-27 | 2020-01-22 | Kyocera Corporation | Lid body, package, and electronic apparatus |
| JP6344555B2 (ja) * | 2014-05-28 | 2018-06-20 | パナソニックIpマネジメント株式会社 | 固体撮像装置 |
| US9334154B2 (en) | 2014-08-11 | 2016-05-10 | Raytheon Company | Hermetically sealed package having stress reducing layer |
| JP6891202B2 (ja) * | 2014-08-11 | 2021-06-18 | レイセオン カンパニー | 応力低減レイヤを有する密封されたパッケージ |
| JP6891203B2 (ja) * | 2014-08-11 | 2021-06-18 | レイセオン カンパニー | 応力低減レイヤを有する密封されたパッケージ |
| CN106414309B (zh) * | 2014-08-11 | 2020-02-28 | 雷声公司 | 具有应力减小层的气密性密封封装 |
| US9508681B2 (en) * | 2014-12-22 | 2016-11-29 | Google Inc. | Stacked semiconductor chip RGBZ sensor |
| US9756273B2 (en) * | 2015-03-04 | 2017-09-05 | Sensors Unlimited, Inc. | Multi-tiered tamper-resistant assembly system and method |
| CN104779214A (zh) * | 2015-04-16 | 2015-07-15 | 歌尔声学股份有限公司 | 集成传感器的封装结构 |
| US9771258B2 (en) | 2015-06-24 | 2017-09-26 | Raytheon Company | Wafer level MEMS package including dual seal ring |
| US20170081178A1 (en) * | 2015-09-22 | 2017-03-23 | Freescale Semiconductor, Inc. | Semiconductor device package with seal structure |
| US9570321B1 (en) | 2015-10-20 | 2017-02-14 | Raytheon Company | Use of an external getter to reduce package pressure |
| JP2018146263A (ja) | 2017-03-01 | 2018-09-20 | 浜松ホトニクス株式会社 | 光検出器 |
| CN107681017B (zh) * | 2017-09-26 | 2019-04-09 | 中国科学院长春光学精密机械与物理研究所 | 一种自下而上生长AlGaN基紫外及深紫外探测器阵列的方法 |
| JP7292077B2 (ja) * | 2018-07-11 | 2023-06-16 | 三菱電機株式会社 | パッケージ素子の製造方法およびパッケージ素子 |
| US11515220B2 (en) * | 2019-12-04 | 2022-11-29 | Advanced Semiconductor Engineering, Inc. | Semiconductor package structures and methods of manufacturing the same |
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| US5962854A (en) * | 1996-06-12 | 1999-10-05 | Ishizuka Electronics Corporation | Infrared sensor and infrared detector |
| KR20030023613A (ko) * | 2000-02-02 | 2003-03-19 | 레이던 컴퍼니 | 집적회로 컴포넌트를 구비하는 마이크로전기기계 시스템의진공 패키징 방법 및 진공 패키지 |
| US6521477B1 (en) * | 2000-02-02 | 2003-02-18 | Raytheon Company | Vacuum package fabrication of integrated circuit components |
| US6876052B1 (en) * | 2000-05-12 | 2005-04-05 | National Semiconductor Corporation | Package-ready light-sensitive integrated circuit and method for its preparation |
| US20040232535A1 (en) * | 2003-05-22 | 2004-11-25 | Terry Tarn | Microelectromechanical device packages with integral heaters |
| KR101258864B1 (ko) | 2004-12-07 | 2013-04-29 | 썬더버드 테크놀로지스, 인코포레이티드 | 긴장된 실리콘, 게이트 엔지니어링된 페르미-fet |
| US7262412B2 (en) | 2004-12-10 | 2007-08-28 | L-3 Communications Corporation | Optically blocked reference pixels for focal plane arrays |
| US20060257785A1 (en) * | 2005-05-13 | 2006-11-16 | Johnson Donald W | Method of forming a photoresist element |
| JP4937623B2 (ja) * | 2006-03-29 | 2012-05-23 | シチズンホールディングス株式会社 | 半導体装置の製造方法 |
| US8115305B2 (en) * | 2007-05-17 | 2012-02-14 | Stats Chippac Ltd. | Integrated circuit package system with thin profile |
| JP4665959B2 (ja) | 2007-11-30 | 2011-04-06 | 日本電気株式会社 | 真空パッケージ |
| US8173471B2 (en) * | 2008-04-29 | 2012-05-08 | Solid State System Co., Ltd. | Method for fabricating micro-electro-mechanical system (MEMS) device |
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