TWI597859B - 用於封裝一入射輻射檢測器的方法及封裝的入射輻射檢測器 - Google Patents

用於封裝一入射輻射檢測器的方法及封裝的入射輻射檢測器 Download PDF

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Publication number
TWI597859B
TWI597859B TW100138076A TW100138076A TWI597859B TW I597859 B TWI597859 B TW I597859B TW 100138076 A TW100138076 A TW 100138076A TW 100138076 A TW100138076 A TW 100138076A TW I597859 B TWI597859 B TW I597859B
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TW
Taiwan
Prior art keywords
detector
opaque
layer
cover
seal ring
Prior art date
Application number
TW100138076A
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English (en)
Chinese (zh)
Other versions
TW201234633A (en
Inventor
羅蘭德Ｗ 葛奇
史帝芬Ｈ 布萊克
湯瑪斯Ａ 柯席恩
布 迪柏
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雷神公司
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Application filed by 雷神公司 filed Critical 雷神公司
Publication of TW201234633A publication Critical patent/TW201234633A/zh
Application granted granted Critical
Publication of TWI597859B publication Critical patent/TWI597859B/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/804—Containers or encapsulations
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/04—Casings
    • G01J5/041—Mountings in enclosures or in a particular environment
    • G01J5/045—Sealings; Vacuum enclosures; Encapsulated packages; Wafer bonding structures; Getter arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems ; Auxiliary parts of microstructural devices or systems
    • B81B7/0032—Packages or encapsulation
    • B81B7/0077—Other packages not provided for in groups B81B7/0035 - B81B7/0074
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H10W72/07336—Soldering or alloying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/331—Shapes of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/331—Shapes of die-attach connectors
    • H10W72/332—Plan-view shape, i.e. in top view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/352—Materials of die-attach connectors comprising metals or metalloids, e.g. solders
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/923—Bond pads having multiple stacked layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/942—Dispositions of bond pads relative to underlying supporting features, e.g. bond pads, RDLs or vias
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/60—Seals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
TW100138076A 2010-10-21 2011-10-20 用於封裝一入射輻射檢測器的方法及封裝的入射輻射檢測器 TWI597859B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US40562110P 2010-10-21 2010-10-21
US13/275,635 US8809784B2 (en) 2010-10-21 2011-10-18 Incident radiation detector packaging

Publications (2)

Publication Number Publication Date
TW201234633A TW201234633A (en) 2012-08-16
TWI597859B true TWI597859B (zh) 2017-09-01

Family

ID=45971785

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100138076A TWI597859B (zh) 2010-10-21 2011-10-20 用於封裝一入射輻射檢測器的方法及封裝的入射輻射檢測器

Country Status (6)

Country Link
US (1) US8809784B2 (enExample)
EP (1) EP2630660B1 (enExample)
JP (1) JP5873094B2 (enExample)
IL (1) IL225715A (enExample)
TW (1) TWI597859B (enExample)
WO (1) WO2012054687A1 (enExample)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103728025A (zh) * 2012-10-10 2014-04-16 中国科学院微电子研究所 一种非制冷红外成像焦平面阵列探测器
US8736045B1 (en) * 2012-11-02 2014-05-27 Raytheon Company Integrated bondline spacers for wafer level packaged circuit devices
US9673169B2 (en) 2013-02-05 2017-06-06 Taiwan Semiconductor Manufacturing Company, Ltd. Method and apparatus for a wafer seal ring
US9287188B2 (en) * 2013-02-05 2016-03-15 Taiwan Semiconductor Manufacturing Company, Ltd. Method and apparatus for a seal ring structure
JP2014186006A (ja) * 2013-03-25 2014-10-02 Toshiba Corp 赤外線撮像装置および赤外線撮像モジュール
NO2944700T3 (enExample) * 2013-07-11 2018-03-17
WO2015046209A1 (ja) * 2013-09-27 2015-04-02 京セラ株式会社 蓋体、パッケージおよび電子装置
JP6344555B2 (ja) * 2014-05-28 2018-06-20 パナソニックＩｐマネジメント株式会社 固体撮像装置
JP6487032B2 (ja) * 2014-08-11 2019-03-20 レイセオン カンパニー 応力低減レイヤを有する密封されたパッケージ
JP6891202B2 (ja) * 2014-08-11 2021-06-18 レイセオン カンパニー 応力低減レイヤを有する密封されたパッケージ
JP6891203B2 (ja) * 2014-08-11 2021-06-18 レイセオン カンパニー 応力低減レイヤを有する密封されたパッケージ
US9334154B2 (en) 2014-08-11 2016-05-10 Raytheon Company Hermetically sealed package having stress reducing layer
US9508681B2 (en) * 2014-12-22 2016-11-29 Google Inc. Stacked semiconductor chip RGBZ sensor
US9756273B2 (en) * 2015-03-04 2017-09-05 Sensors Unlimited, Inc. Multi-tiered tamper-resistant assembly system and method
CN104779214A (zh) * 2015-04-16 2015-07-15 歌尔声学股份有限公司 集成传感器的封装结构
US9771258B2 (en) * 2015-06-24 2017-09-26 Raytheon Company Wafer level MEMS package including dual seal ring
US20170081178A1 (en) * 2015-09-22 2017-03-23 Freescale Semiconductor, Inc. Semiconductor device package with seal structure
US9570321B1 (en) 2015-10-20 2017-02-14 Raytheon Company Use of an external getter to reduce package pressure
JP2018146263A (ja) 2017-03-01 2018-09-20 浜松ホトニクス株式会社 光検出器
CN107681017B (zh) * 2017-09-26 2019-04-09 中国科学院长春光学精密机械与物理研究所 一种自下而上生长AlGaN基紫外及深紫外探测器阵列的方法
JP7292077B2 (ja) * 2018-07-11 2023-06-16 三菱電機株式会社 パッケージ素子の製造方法およびパッケージ素子
US11515220B2 (en) * 2019-12-04 2022-11-29 Advanced Semiconductor Engineering, Inc. Semiconductor package structures and methods of manufacturing the same

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5962854A (en) * 1996-06-12 1999-10-05 Ishizuka Electronics Corporation Infrared sensor and infrared detector
US6521477B1 (en) * 2000-02-02 2003-02-18 Raytheon Company Vacuum package fabrication of integrated circuit components
JP2003531475A (ja) * 2000-02-02 2003-10-21 レイセオン・カンパニー 集積回路コンポーネントを備えたマイクロ電気機械システムデバイスの真空パッケージの製造
US6876052B1 (en) * 2000-05-12 2005-04-05 National Semiconductor Corporation Package-ready light-sensitive integrated circuit and method for its preparation
US20040232535A1 (en) * 2003-05-22 2004-11-25 Terry Tarn Microelectromechanical device packages with integral heaters
KR101258864B1 (ko) 2004-12-07 2013-04-29 썬더버드 테크놀로지스, 인코포레이티드 긴장된 실리콘, 게이트 엔지니어링된 페르미－ｆｅｔ
US7262412B2 (en) * 2004-12-10 2007-08-28 L-3 Communications Corporation Optically blocked reference pixels for focal plane arrays
US20060257785A1 (en) * 2005-05-13 2006-11-16 Johnson Donald W Method of forming a photoresist element
JP4937623B2 (ja) * 2006-03-29 2012-05-23 シチズンホールディングス株式会社 半導体装置の製造方法
US8115305B2 (en) * 2007-05-17 2012-02-14 Stats Chippac Ltd. Integrated circuit package system with thin profile
JP4665959B2 (ja) 2007-11-30 2011-04-06 日本電気株式会社 真空パッケージ
US8173471B2 (en) * 2008-04-29 2012-05-08 Solid State System Co., Ltd. Method for fabricating micro-electro-mechanical system (MEMS) device

Also Published As

Publication number Publication date
IL225715A (en) 2017-10-31
WO2012054687A1 (en) 2012-04-26
US8809784B2 (en) 2014-08-19
IL225715A0 (en) 2013-06-27
TW201234633A (en) 2012-08-16
JP2013543268A (ja) 2013-11-28
US20120096813A1 (en) 2012-04-26
EP2630660B1 (en) 2018-10-03
EP2630660A1 (en) 2013-08-28
JP5873094B2 (ja) 2016-03-01

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