TWI596893B - 高效率電壓模式ｄ類拓樸結構 - Google Patents

高效率電壓模式ｄ類拓樸結構 Download PDF

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Publication number
TWI596893B
TWI596893B TW103131008A TW103131008A TWI596893B TW I596893 B TWI596893 B TW I596893B TW 103131008 A TW103131008 A TW 103131008A TW 103131008 A TW103131008 A TW 103131008A TW I596893 B TWI596893 B TW I596893B
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TW
Taiwan
Prior art keywords
pair
transistors
coupled
inductor
zvs
Prior art date
Application number
TW103131008A
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English (en)
Chinese (zh)
Other versions
TW201524116A (zh
Inventor
麥克Ａ 德魯義
約翰Ｔ 史泰登
巴斯卡蘭Ｒ 奈爾
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高效電源轉換公司
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Publication of TW201524116A publication Critical patent/TW201524116A/zh
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Publication of TWI596893B publication Critical patent/TWI596893B/zh

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/217—Class D power amplifiers; Switching amplifiers
    • H03F3/2171—Class D power amplifiers; Switching amplifiers with field-effect devices
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J50/00—Circuit arrangements or systems for wireless supply or distribution of electric power
    • H02J50/10—Circuit arrangements or systems for wireless supply or distribution of electric power using inductive coupling
    • H02J50/12—Circuit arrangements or systems for wireless supply or distribution of electric power using inductive coupling of the resonant type
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/217—Class D power amplifiers; Switching amplifiers
    • H03F3/2173—Class D power amplifiers; Switching amplifiers of the bridge type
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/387—A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/541—Transformer coupled at the output of an amplifier

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Amplifiers (AREA)
  • Electronic Switches (AREA)
TW103131008A 2013-09-10 2014-09-09 高效率電壓模式ｄ類拓樸結構 TWI596893B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201361876056P 2013-09-10 2013-09-10
US201461968730P 2014-03-21 2014-03-21

Publications (2)

Publication Number Publication Date
TW201524116A TW201524116A (zh) 2015-06-16
TWI596893B true TWI596893B (zh) 2017-08-21

Family

ID=52624923

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103131008A TWI596893B (zh) 2013-09-10 2014-09-09 高效率電壓模式ｄ類拓樸結構

Country Status (7)

Country Link
US (2) US9887677B2 (enExample)
JP (1) JP6486938B2 (enExample)
KR (1) KR102087283B1 (enExample)
CN (1) CN105556835B (enExample)
DE (1) DE112014004142B4 (enExample)
TW (1) TWI596893B (enExample)
WO (1) WO2015038369A1 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9276413B1 (en) 2014-09-25 2016-03-01 Navitas Semiconductor, Inc. Soft switched single stage wireless power transfer
GB2535976C (en) * 2015-02-02 2017-03-29 Drayson Tech (Europe) Ltd Inverter for inductive power transfer
US9559602B2 (en) * 2015-02-26 2017-01-31 Infineon Technologies Austria Ag Magnetizing current based control of resonant converters
JP6451499B2 (ja) * 2015-05-22 2019-01-16 富士通株式会社 増幅器及び増幅器の制御方法
US11038374B2 (en) 2017-04-18 2021-06-15 Infineon Technologies Austria Ag Flexible bridge amplifier for wireless power
CN107733104B (zh) * 2017-11-14 2024-04-05 西北工业大学 一种基于d类功率放大器的无线电能传输装置
EP3499718B1 (en) * 2017-12-18 2021-07-07 Stichting IMEC Nederland Improvements in or relating to switched-capacitor power amplifiers
IT201800002257A1 (it) 2018-01-31 2019-07-31 St Microelectronics Srl Circuito di commutazione, dispositivo e procedimento corrispondenti
IT201800002255A1 (it) 2018-01-31 2019-07-31 St Microelectronics Srl Circuito a commutazione, dispositivo e procedimento corrispondenti
US10637298B2 (en) 2018-02-14 2020-04-28 Hong Kong Applied Science and Technology Research Institute Company Limited Wireless power transfer system
JP7071193B2 (ja) * 2018-03-30 2022-05-18 キヤノン株式会社 送電装置
CN110350781B (zh) * 2019-06-04 2020-06-26 北京交通大学 基于电容支路的无谐振软开关电路
US11082033B2 (en) * 2019-10-25 2021-08-03 Texas Instruments Incorporated Rapid and high voltage pulse generation circuits
JP7710787B2 (ja) * 2021-06-02 2025-07-22 日本無線株式会社 電力増幅器および物標探知装置
US11855530B1 (en) * 2022-08-05 2023-12-26 Monolithic Power Systems, Inc. Resonant converter with multiple resonant tank circuits

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5872489A (en) * 1997-04-28 1999-02-16 Rockwell Science Center, Llc Integrated tunable inductance network and method
US20060181363A1 (en) * 2005-02-15 2006-08-17 Samsung Electronics Co., Ltd. Parallel-structured switched variable inductor circuit
US20120286868A1 (en) * 2011-05-12 2012-11-15 Texas Instruments Incorporated Class d power amplifier
US20130082538A1 (en) * 2011-09-05 2013-04-04 Peter Wambsganss Circuitry And Method For Inductive Power Transmission

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62243407A (ja) * 1986-04-16 1987-10-23 Japan Radio Co Ltd 電力増幅器
US5023566A (en) * 1989-12-21 1991-06-11 General Electric Company Driver for a high efficiency, high frequency Class-D power amplifier
JPH0746853A (ja) * 1993-07-29 1995-02-14 Toshiba Corp ソフトスイッチング式インバータ制御方法及びその装置
US6548985B1 (en) * 2002-03-22 2003-04-15 General Motors Corporation Multiple input single-stage inductive charger
JP4538783B2 (ja) * 2004-03-04 2010-09-08 日本ビクター株式会社 Ｄクラスアンプ
US7489526B2 (en) * 2004-08-20 2009-02-10 Analog Devices, Inc. Power and information signal transfer using micro-transformers
US20070007621A1 (en) 2005-03-30 2007-01-11 Yamaha Corporation Fuse breakdown method adapted to semiconductor device
WO2006115095A1 (ja) * 2005-04-21 2006-11-02 Matsushita Electric Industrial Co., Ltd. 駆動回路および表示装置
US8018279B2 (en) * 2007-06-01 2011-09-13 International Rectifier Corporation Class D amplifier circuit with bi-directional power switch
US8044464B2 (en) 2007-09-21 2011-10-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
EP2058993B1 (en) * 2007-11-12 2010-04-07 Lucent Technologies Inc. Radio frequency transmitter
US8237531B2 (en) * 2007-12-31 2012-08-07 Globalfoundries Singapore Pte. Ltd. Tunable high quality factor inductor
GB0810017D0 (en) * 2008-06-02 2008-07-09 Ntnu Technology Transfer As Switching power amplifier
US8532724B2 (en) 2008-09-17 2013-09-10 Qualcomm Incorporated Transmitters for wireless power transmission
US8189802B2 (en) * 2009-03-19 2012-05-29 Qualcomm Incorporated Digital filtering in a Class D amplifier system to reduce noise fold over
WO2011058913A1 (en) 2009-11-13 2011-05-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8319564B2 (en) * 2010-03-26 2012-11-27 Altera Corporation Integrated circuits with configurable inductors
JP2012005238A (ja) * 2010-06-17 2012-01-05 Nissan Motor Co Ltd 非接触給電装置
US8378723B1 (en) * 2010-10-22 2013-02-19 Altera Corporation Voltage-controlled-oscillator circuitry with power supply noise rejection
KR101973212B1 (ko) 2010-11-05 2019-04-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US8842450B2 (en) * 2011-04-12 2014-09-23 Flextronics, Ap, Llc Power converter using multiple phase-shifting quasi-resonant converters
JP2013030973A (ja) * 2011-07-28 2013-02-07 Nippon Soken Inc 電源装置、非接触送電装置、車両、および非接触電力伝送システム
US20130088088A1 (en) 2011-09-05 2013-04-11 Peter Wambsganss Circuitry And Method For Inductive Power Transmission
US8744378B2 (en) * 2012-02-09 2014-06-03 Texas Instruments Incorporated LINC transmitter with improved efficiency

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5872489A (en) * 1997-04-28 1999-02-16 Rockwell Science Center, Llc Integrated tunable inductance network and method
US20060181363A1 (en) * 2005-02-15 2006-08-17 Samsung Electronics Co., Ltd. Parallel-structured switched variable inductor circuit
US20120286868A1 (en) * 2011-05-12 2012-11-15 Texas Instruments Incorporated Class d power amplifier
US20130082538A1 (en) * 2011-09-05 2013-04-04 Peter Wambsganss Circuitry And Method For Inductive Power Transmission

Also Published As

Publication number Publication date
US10230341B2 (en) 2019-03-12
TW201524116A (zh) 2015-06-16
DE112014004142B4 (de) 2021-10-21
WO2015038369A1 (en) 2015-03-19
US20180131335A1 (en) 2018-05-10
CN105556835B (zh) 2018-11-02
KR102087283B1 (ko) 2020-03-11
JP2016537908A (ja) 2016-12-01
JP6486938B2 (ja) 2019-03-20
DE112014004142T5 (de) 2016-06-23
US20150069855A1 (en) 2015-03-12
KR20160058794A (ko) 2016-05-25
CN105556835A (zh) 2016-05-04
US9887677B2 (en) 2018-02-06

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