JP6486938B2 - 高効率電圧モードd級トポロジ - Google Patents
高効率電圧モードd級トポロジ Download PDFInfo
- Publication number
- JP6486938B2 JP6486938B2 JP2016540310A JP2016540310A JP6486938B2 JP 6486938 B2 JP6486938 B2 JP 6486938B2 JP 2016540310 A JP2016540310 A JP 2016540310A JP 2016540310 A JP2016540310 A JP 2016540310A JP 6486938 B2 JP6486938 B2 JP 6486938B2
- Authority
- JP
- Japan
- Prior art keywords
- tank circuit
- inductor
- coupled
- transistor
- pair
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000003990 capacitor Substances 0.000 claims description 45
- 230000005540 biological transmission Effects 0.000 claims description 16
- 230000000903 blocking effect Effects 0.000 claims 2
- 239000008186 active pharmaceutical agent Substances 0.000 description 4
- 230000001939 inductive effect Effects 0.000 description 3
- 238000001816 cooling Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010835 comparative analysis Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000005674 electromagnetic induction Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/217—Class D power amplifiers; Switching amplifiers
- H03F3/2171—Class D power amplifiers; Switching amplifiers with field-effect devices
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02J50/00—Circuit arrangements or systems for wireless supply or distribution of electric power
- H02J50/10—Circuit arrangements or systems for wireless supply or distribution of electric power using inductive coupling
- H02J50/12—Circuit arrangements or systems for wireless supply or distribution of electric power using inductive coupling of the resonant type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
- H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/217—Class D power amplifiers; Switching amplifiers
- H03F3/2173—Class D power amplifiers; Switching amplifiers of the bridge type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/387—A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/541—Transformer coupled at the output of an amplifier
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Networks & Wireless Communication (AREA)
- Amplifiers (AREA)
- Electronic Switches (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201361876056P | 2013-09-10 | 2013-09-10 | |
| US61/876,056 | 2013-09-10 | ||
| US201461968730P | 2014-03-21 | 2014-03-21 | |
| US61/968,730 | 2014-03-21 | ||
| PCT/US2014/053690 WO2015038369A1 (en) | 2013-09-10 | 2014-09-02 | High efficiency voltage mode class d topology |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016537908A JP2016537908A (ja) | 2016-12-01 |
| JP2016537908A5 JP2016537908A5 (enExample) | 2017-10-05 |
| JP6486938B2 true JP6486938B2 (ja) | 2019-03-20 |
Family
ID=52624923
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016540310A Active JP6486938B2 (ja) | 2013-09-10 | 2014-09-02 | 高効率電圧モードd級トポロジ |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US9887677B2 (enExample) |
| JP (1) | JP6486938B2 (enExample) |
| KR (1) | KR102087283B1 (enExample) |
| CN (1) | CN105556835B (enExample) |
| DE (1) | DE112014004142B4 (enExample) |
| TW (1) | TWI596893B (enExample) |
| WO (1) | WO2015038369A1 (enExample) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9276413B1 (en) | 2014-09-25 | 2016-03-01 | Navitas Semiconductor, Inc. | Soft switched single stage wireless power transfer |
| GB2535976C (en) * | 2015-02-02 | 2017-03-29 | Drayson Tech (Europe) Ltd | Inverter for inductive power transfer |
| US9559602B2 (en) * | 2015-02-26 | 2017-01-31 | Infineon Technologies Austria Ag | Magnetizing current based control of resonant converters |
| JP6451499B2 (ja) * | 2015-05-22 | 2019-01-16 | 富士通株式会社 | 増幅器及び増幅器の制御方法 |
| US11038374B2 (en) | 2017-04-18 | 2021-06-15 | Infineon Technologies Austria Ag | Flexible bridge amplifier for wireless power |
| CN107733104B (zh) * | 2017-11-14 | 2024-04-05 | 西北工业大学 | 一种基于d类功率放大器的无线电能传输装置 |
| EP3499718B1 (en) * | 2017-12-18 | 2021-07-07 | Stichting IMEC Nederland | Improvements in or relating to switched-capacitor power amplifiers |
| IT201800002257A1 (it) | 2018-01-31 | 2019-07-31 | St Microelectronics Srl | Circuito di commutazione, dispositivo e procedimento corrispondenti |
| IT201800002255A1 (it) | 2018-01-31 | 2019-07-31 | St Microelectronics Srl | Circuito a commutazione, dispositivo e procedimento corrispondenti |
| US10637298B2 (en) | 2018-02-14 | 2020-04-28 | Hong Kong Applied Science and Technology Research Institute Company Limited | Wireless power transfer system |
| JP7071193B2 (ja) * | 2018-03-30 | 2022-05-18 | キヤノン株式会社 | 送電装置 |
| CN110350781B (zh) * | 2019-06-04 | 2020-06-26 | 北京交通大学 | 基于电容支路的无谐振软开关电路 |
| US11082033B2 (en) * | 2019-10-25 | 2021-08-03 | Texas Instruments Incorporated | Rapid and high voltage pulse generation circuits |
| JP7710787B2 (ja) * | 2021-06-02 | 2025-07-22 | 日本無線株式会社 | 電力増幅器および物標探知装置 |
| US11855530B1 (en) * | 2022-08-05 | 2023-12-26 | Monolithic Power Systems, Inc. | Resonant converter with multiple resonant tank circuits |
Family Cites Families (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62243407A (ja) * | 1986-04-16 | 1987-10-23 | Japan Radio Co Ltd | 電力増幅器 |
| US5023566A (en) * | 1989-12-21 | 1991-06-11 | General Electric Company | Driver for a high efficiency, high frequency Class-D power amplifier |
| JPH0746853A (ja) * | 1993-07-29 | 1995-02-14 | Toshiba Corp | ソフトスイッチング式インバータ制御方法及びその装置 |
| US5872489A (en) * | 1997-04-28 | 1999-02-16 | Rockwell Science Center, Llc | Integrated tunable inductance network and method |
| US6548985B1 (en) * | 2002-03-22 | 2003-04-15 | General Motors Corporation | Multiple input single-stage inductive charger |
| JP4538783B2 (ja) * | 2004-03-04 | 2010-09-08 | 日本ビクター株式会社 | Dクラスアンプ |
| US7489526B2 (en) * | 2004-08-20 | 2009-02-10 | Analog Devices, Inc. | Power and information signal transfer using micro-transformers |
| KR20060091507A (ko) * | 2005-02-15 | 2006-08-21 | 삼성전자주식회사 | 병렬구조의 스위치드 가변 인덕터 회로 |
| US20070007621A1 (en) | 2005-03-30 | 2007-01-11 | Yamaha Corporation | Fuse breakdown method adapted to semiconductor device |
| WO2006115095A1 (ja) * | 2005-04-21 | 2006-11-02 | Matsushita Electric Industrial Co., Ltd. | 駆動回路および表示装置 |
| US8018279B2 (en) * | 2007-06-01 | 2011-09-13 | International Rectifier Corporation | Class D amplifier circuit with bi-directional power switch |
| US8044464B2 (en) | 2007-09-21 | 2011-10-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| EP2058993B1 (en) * | 2007-11-12 | 2010-04-07 | Lucent Technologies Inc. | Radio frequency transmitter |
| US8237531B2 (en) * | 2007-12-31 | 2012-08-07 | Globalfoundries Singapore Pte. Ltd. | Tunable high quality factor inductor |
| GB0810017D0 (en) * | 2008-06-02 | 2008-07-09 | Ntnu Technology Transfer As | Switching power amplifier |
| US8532724B2 (en) | 2008-09-17 | 2013-09-10 | Qualcomm Incorporated | Transmitters for wireless power transmission |
| US8189802B2 (en) * | 2009-03-19 | 2012-05-29 | Qualcomm Incorporated | Digital filtering in a Class D amplifier system to reduce noise fold over |
| WO2011058913A1 (en) | 2009-11-13 | 2011-05-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US8319564B2 (en) * | 2010-03-26 | 2012-11-27 | Altera Corporation | Integrated circuits with configurable inductors |
| JP2012005238A (ja) * | 2010-06-17 | 2012-01-05 | Nissan Motor Co Ltd | 非接触給電装置 |
| US8378723B1 (en) * | 2010-10-22 | 2013-02-19 | Altera Corporation | Voltage-controlled-oscillator circuitry with power supply noise rejection |
| KR101973212B1 (ko) | 2010-11-05 | 2019-04-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| US8842450B2 (en) * | 2011-04-12 | 2014-09-23 | Flextronics, Ap, Llc | Power converter using multiple phase-shifting quasi-resonant converters |
| US8373504B2 (en) * | 2011-05-12 | 2013-02-12 | Texas Instruments Incorporated | Class D power amplifier |
| JP2013030973A (ja) * | 2011-07-28 | 2013-02-07 | Nippon Soken Inc | 電源装置、非接触送電装置、車両、および非接触電力伝送システム |
| US20130088088A1 (en) | 2011-09-05 | 2013-04-11 | Peter Wambsganss | Circuitry And Method For Inductive Power Transmission |
| US20130082538A1 (en) * | 2011-09-05 | 2013-04-04 | Peter Wambsganss | Circuitry And Method For Inductive Power Transmission |
| US8744378B2 (en) * | 2012-02-09 | 2014-06-03 | Texas Instruments Incorporated | LINC transmitter with improved efficiency |
-
2014
- 2014-09-02 JP JP2016540310A patent/JP6486938B2/ja active Active
- 2014-09-02 KR KR1020167006920A patent/KR102087283B1/ko active Active
- 2014-09-02 CN CN201480049293.0A patent/CN105556835B/zh active Active
- 2014-09-02 WO PCT/US2014/053690 patent/WO2015038369A1/en not_active Ceased
- 2014-09-02 DE DE112014004142.4T patent/DE112014004142B4/de active Active
- 2014-09-09 US US14/481,402 patent/US9887677B2/en active Active
- 2014-09-09 TW TW103131008A patent/TWI596893B/zh active
-
2018
- 2018-01-08 US US15/864,814 patent/US10230341B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US10230341B2 (en) | 2019-03-12 |
| TW201524116A (zh) | 2015-06-16 |
| DE112014004142B4 (de) | 2021-10-21 |
| WO2015038369A1 (en) | 2015-03-19 |
| US20180131335A1 (en) | 2018-05-10 |
| TWI596893B (zh) | 2017-08-21 |
| CN105556835B (zh) | 2018-11-02 |
| KR102087283B1 (ko) | 2020-03-11 |
| JP2016537908A (ja) | 2016-12-01 |
| DE112014004142T5 (de) | 2016-06-23 |
| US20150069855A1 (en) | 2015-03-12 |
| KR20160058794A (ko) | 2016-05-25 |
| CN105556835A (zh) | 2016-05-04 |
| US9887677B2 (en) | 2018-02-06 |
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