TWI596438B - Substrate processing apparatus, component manufacturing system and component manufacturing method - Google Patents

Description

Substrate processing apparatus, component manufacturing system, and component manufacturing method

The present invention relates to a substrate processing apparatus, a component manufacturing system, and a component manufacturing method.

In the past, as a substrate processing apparatus, there is an exposure apparatus in which a projection optical system is disposed between a photomask and a board (substrate) (for example, refer to Patent Document 1). The projection optical system includes a lens group, a plane mirror, two polarization beam splitters, two mirrors, a λ/4 wavelength plate, and a field stop. In this exposure apparatus, the projection light that is illuminating the S-polarized light of the projection optical system through the reticle is reflected by one of the polarization beam splitters. The projected light of the reflected S-polarized light is converted into circularly polarized light by passing through the λ/4 wavelength plate. The projected light of the circularly polarized light passes through the lens group and is reflected by the plane mirror. The projected light of the reflected circularly polarized light is converted into P-polarized light by passing through the λ/4 wavelength plate. The projection light of the P-polarized light penetrates the polarizing beam splitter of the other side and is reflected by one of the mirrors. The projection light of the P-polarized light reflected by one of the mirrors forms an intermediate image in the field of view. The projection light of the P-polarized light passing through the field of view is reflected by the other mirror and is incident on one of the polarization beam splitters. The projection light of the P-polarized light penetrates one of the polarizing beam splitters. The projected light of the penetrating P-polarized light is converted into circularly polarized light by passing through the λ/4 wavelength plate. The projected light of the circularly polarized light is reflected by the plane mirror through the lens group. The projected light of the reflected circularly polarized light is converted into S-polarized light by passing through the λ/4 wavelength plate. The projected light of the S-polarized light is reflected by the other polarizing beam splitter to reach the panel.

[First technical literature]

[Patent Document 1] Japanese Patent Laid-Open No. Hei 8-64501

At this time, part of the projection light reflected and transmitted by the polarization beam splitter becomes leaked light. That is to say, one part of the projection light reflected by the polarizing beam splitter is separated, and one part of the separated projection light becomes leakage light and penetrates the polarization beam splitter or is separated from the projection light penetrated by the polarization beam splitter. And a part of the separated projection light becomes leaked light and is reflected by the polarization beam splitter. In this case, it is possible to form a defective image on the substrate by imaging the leaked light on the substrate. At this time, since a projection image of projection light and a defective image formed by leaking light are formed on the substrate, double exposure may occur.

The present invention has been made in view of the above problems, and an object thereof is to provide a substrate processing apparatus, a component manufacturing system, and a device manufacturing method which are capable of reducing the influence of leakage light on a projection image formed on a substrate, and are suitable for projecting a projection image on a substrate.

According to a first aspect of the present invention, there is provided a substrate processing apparatus comprising: a projection optical system that forms a middle image of the pattern on a predetermined intermediate image surface by using a first projection light from a pattern of a mask member; The second projection light that travels toward the predetermined substrate on the intermediate image surface is folded back to pass through the projection optical system again, whereby the intermediate image re-imaging projection image is formed on the substrate; and the light amount reducing portion reduces a portion of the first projection light The amount of light projected onto the substrate as leaking light; the projection optical system having a partial optical system that incidents the first projection light from the pattern to form the intermediate image; and a light guiding optical system that will be optical from the portion The first projection light that is emitted is guided to the intermediate image plane, and the second projection light from the intermediate image plane is redirected to the portion a partial optical system for re-imaging the second projection light from the intermediate image surface and forming the projection image on the substrate.

According to a second aspect of the present invention, there is provided a component manufacturing system comprising: a substrate processing apparatus according to a first aspect of the present invention; and a substrate supply apparatus that supplies the substrate to the substrate processing apparatus.

According to a third aspect of the present invention, there is provided a method of manufacturing a device comprising: performing a projection exposure on a substrate by using a substrate processing apparatus according to a first aspect of the present invention, and processing the substrate by projection exposure to form the substrate The action of the pattern of the reticle member.

According to an aspect of the present invention, it is possible to provide a substrate processing apparatus, a component manufacturing system, and a device manufacturing method which are capable of reducing the amount of light leaked onto a substrate and projecting a projection image on the substrate.

1‧‧‧Component Manufacturing System

2‧‧‧Substrate supply unit

4‧‧‧Substrate recovery unit

5‧‧‧Upper control device

11‧‧‧Photomask retention mechanism

12‧‧‧Substrate support mechanism

13‧‧‧Light source device

16‧‧‧Lower control device

21‧‧‧Photomask retaining cylinder

25‧‧‧Substrate support cylinder

31‧‧‧Light source department

32‧‧‧Light guiding members

41‧‧‧1/4 wavelength plate

51‧‧‧ Collimating lens

52‧‧‧Future eye lens

53‧‧‧ Concentrating lens

54‧‧‧ cylindrical lens

55‧‧‧Lighting field of view

56‧‧‧Relay lens

61‧‧‧Partial Optics

62‧‧‧Reflective Optics

63‧‧‧Projected field of view

64‧‧‧Focus correction optical components

65‧‧‧Optical components for offset

66‧‧‧ magnification correction optical components

67‧‧‧Rotation correction mechanism

68‧‧‧Polarization adjustment mechanism

71‧‧‧1st lens group

71a‧‧‧Reflective lens

72‧‧‧1st concave mirror

76‧‧‧1st deflecting member

77‧‧‧2nd deflecting member

78‧‧‧3rd deflecting member

79‧‧‧4th deflecting member

91‧‧‧第1稜鏡

92‧‧‧第2稜鏡

93‧‧‧ polarized separation surface

100‧‧‧Reflective optics (second embodiment)

104‧‧‧1/2 wavelength plate (second embodiment)

105‧‧‧First deflecting member (second embodiment)

106‧‧‧Second deflecting member (second embodiment)

107‧‧‧1/2 wavelength plate (second embodiment)

111‧‧‧1st visor (2nd embodiment)

112‧‧‧2nd visor (2nd embodiment)

130‧‧‧Reflective optics (third embodiment)

131‧‧‧Partial optical system (3rd embodiment)

150‧‧‧Substrate support mechanism (fourth embodiment)

151‧‧‧ drive roller (fourth embodiment)

AX1‧‧‧1st axis

AX2‧‧‧2nd axis

BX1‧‧‧1st optical axis

BX2‧‧‧2nd optical axis

CL‧‧‧ center face

EL1‧‧‧ illumination beam

EL2a‧‧‧1st projection beam

EL2b‧‧‧2nd projection beam

EL3‧‧‧Imaginary first projection beam (third embodiment)

Illuminated first projection beam of EL4‧‧‧ (third embodiment)

FR1‧‧‧ supply roller

FR2‧‧‧Recycling roller

IL1~IL6‧‧‧Lighting Optics

ILM‧‧‧Lighting Optical Module

IR1~IR6‧‧‧Lighting area

M‧‧‧Photo Mask

P‧‧‧Substrate

P1‧‧‧Material cover

P2‧‧‧ bearing surface

P3‧‧‧1st reflecting surface

P4‧‧‧2nd reflecting surface

P5‧‧‧3rd reflecting surface

P6‧‧‧4th reflecting surface

P7‧‧‧ intermediate image

P10‧‧‧1st polarized separation surface (2nd embodiment)

P11‧‧‧Second polarized separation surface (second embodiment)

P12‧‧‧1st reflection surface (2nd embodiment)

P13‧‧‧2nd reflecting surface (2nd embodiment)

P15‧‧‧Imaginary mask surface (3rd embodiment)

P16‧‧‧Imaginary intermediate image surface (third embodiment)

PA1~PA6‧‧‧projection area

PBS‧‧‧ polarizing beam splitter

PBS1‧‧‧1st polarizing beam splitter (2nd embodiment)

PBS2‧‧‧Second polarizing beam splitter (second embodiment)

PL1~PL6‧‧‧Projection Optics

PLM‧‧‧Projection Optical Module

Rfa‧‧‧ radius of curvature

Rm‧‧‧ radius of curvature

U1~Un‧‧‧Processing device

U3‧‧‧Exposure device (substrate processing device)

Fig. 1 is a view showing the configuration of a component manufacturing system of a first embodiment.

Fig. 2 is a view showing the overall configuration of an exposure apparatus (substrate processing apparatus) according to the first embodiment.

Fig. 3 is a view showing the arrangement of an illumination area and a projection area of the exposure apparatus shown in Fig. 2.

4 is a view showing the configuration of an illumination optical system and a projection optical system of the exposure apparatus shown in FIG. 2.

Fig. 5 is a view showing a full-image field of view formed by a projection optical module on a YZ plane.

Fig. 6 is a flow chart showing the method of manufacturing the device of the first embodiment.

Fig. 7 is a view showing the configuration of an illumination optical system and a projection optical system of the exposure apparatus according to the second embodiment.

Fig. 8 is a view showing the configuration of a projection optical system of the exposure apparatus of the third embodiment.

Fig. 9 is a view showing the overall configuration of an exposure apparatus (substrate processing apparatus) according to a fourth embodiment.

The embodiment (embodiment) for carrying out the invention will be described in detail below with reference to the drawings. The present invention is of course not limited to the contents described in the following embodiments. Further, among the constituent elements described below, those that are easily conceived by the practitioner include substantially the same items. Further, the constituent elements described below can be combined as appropriate. Further, various omissions, substitutions, and changes of the components may be made without departing from the scope of the invention.

[First Embodiment]

The substrate processing apparatus according to the first embodiment is an exposure apparatus that performs exposure processing on a substrate, and the exposure apparatus is an element manufacturing system in which various processes are performed on the exposed substrate to manufacture an element. First, the component manufacturing system will be described.

<Component Manufacturing System>

Fig. 1 is a view showing the configuration of a component manufacturing system of a first embodiment. The component manufacturing system 1 shown in Fig. 1 is a production line (flexible display production line) for manufacturing a flexible display as a component. As the flexible display, for example, an organic EL display or the like is available. In the component manufacturing system 1, the substrate P is sent out from the supply reel FR1 in which the flexible substrate P is wound into a roll shape, and the processed substrate P is continuously subjected to various processes, and the processed substrate is processed. P is wound as a flexible element in the collection roll FR2, a so-called roll to roll method. First embodiment In the component manufacturing system 1, the substrate P from which the film-form sheet is fed is fed from the supply reel FR1, and the substrate P sent from the supply reel FR1 is sequentially passed through n processing apparatuses U1, U2, and U3. U4, U5, ... Un are wound up to the recovery roll FR2. First, the substrate P to be processed by the component manufacturing system 1 will be described.

For the substrate P, for example, a foil made of a metal or an alloy such as a resin film or stainless steel is used. The material of the resin film includes, for example, a polyethylene resin, a polypropylene resin, a polyester resin, a vinyl ethylene copolymer resin, a polyvinyl chloride resin, a cellulose resin, a polyamide resin, a polyimide resin, a polycarbonate resin. One or more of polystyrene resin and vinyl acetate resin.

The substrate P is preferably selected such that the coefficient of thermal expansion is remarkably large, and the amount of deformation which can be generated by heat in various processes performed on the substrate P can be substantially ignored. The coefficient of thermal expansion can be set, for example, by mixing the inorganic filler into the resin film, and is set to be smaller than a threshold value corresponding to the process temperature or the like. The inorganic filler may be, for example, titanium oxide, zinc oxide, aluminum oxide, cerium oxide or the like. In addition, the substrate P may be a single layer body of extremely thin glass having a thickness of about 100 μm manufactured by a floating method or the like, or a laminate of the above-mentioned resin film, foil, or the like.

The substrate P configured in this manner is wound into a roll shape to be a supply roll FR1, and the supply roll FR1 is attached to the component manufacturing system 1. The component manufacturing system 1 equipped with the supply reel FR1 repeatedly performs various processes for manufacturing one component on the substrate P sent from the supply reel FR1. Therefore, the processed substrate P is in a state in which a plurality of elements are connected. In other words, the substrate P sent from the supply reel FR1 is a multi-sided substrate. Further, the substrate P may be a person who has been modified by a predetermined pre-treatment, activating the surface, or forming a fine partition structure (concave-convex structure) for precise patterning on the surface.

The substrate P after the treatment is wound into a roll shape and recovered as a recovery roll FR2. The recovery reel FR2 is attached to a cutting device (not shown). A cutting device equipped with a recycling reel FR2 divides (cuts) the processed substrate P into individual elements, thereby forming a plurality of elements. The size of the substrate P is, for example, about 10 cm to 2 m in the width direction (direction of the short side) and 10 m or more in the longitudinal direction (direction of the strip). Of course, the size of the substrate P is not limited to the above size.

Next, the component manufacturing system 1 will be described with reference to Fig. 1 . In Fig. 1, the X direction, the Y direction, and the Z direction form an orthogonal orthogonal coordinate system. The X direction is in the horizontal plane, and the direction in which the supply reel FR1 and the recovery reel FR2 are connected is the left-right direction in FIG. The Y direction is a direction orthogonal to the X direction in the horizontal plane, and is the front and rear directions in FIG. The Y direction is the axial direction of the supply reel FR1 and the recovery reel FR2. The Z direction is a direction orthogonal to the X direction and the Y direction (vertical direction).

The component manufacturing system 1 includes a substrate supply device 2 that supplies the substrate P, a processing device U1 to Un that performs various processes on the substrate P supplied from the substrate supply device 2, and a substrate P that is processed by the processing device U1 to Un. The substrate recovery device 4 and the device upper control device 5 of the control element manufacturing system 1.

The supply reel FR1 is rotatably mounted to the substrate supply device 2. The substrate supply device 2 has a drive roller R1 that feeds the substrate P from the attached supply spool FR1, and an edge position controller EPC1 that adjusts the position of the substrate P in the width direction (Y direction). The driving roller D1 rotates while sandwiching the front and back surfaces of the substrate P, and feeds the substrate P from the supply reel FR1 toward the conveying reel FR2, whereby the substrate P is supplied to the processing devices U1 to Un. At this time, the edge position controller EPC1 is in the width direction end (edge) of the substrate P. The position is moved in the width direction so as to correct the position of the substrate P in the width direction so as to be in the range of ±10 μm to ± tens of μm with respect to the target position.

The recovery roll FR2 is rotatably mounted on the substrate recovery device 4. The substrate recovery device 4 has an edge position controller EPC2 that pulls the processed substrate P toward the recovery roll FR2 side and the position of the adjustment substrate P in the width direction (Y direction). The substrate recovery device 4 rotates while holding the front and back surfaces of the substrate P with the driving roller R2, pulls the substrate P in the conveying direction, and rotates the collecting reel FR2 to wind the substrate P. At this time, the edge position controller EPC2 is configured similarly to the edge position controller EPC1 to correct the position of the substrate P in the width direction to prevent unevenness in the width direction of the end portion (edge) of the substrate P in the width direction.

The processing device U1 is a coating device that applies a photosensitive functional liquid to the surface of the substrate P supplied from the substrate supply device 2. As the photosensitive functional liquid, for example, a photoresist, a photosensitive decane coupling agent, a UV-curing resin liquid, and other solutions for photosensitive plating catalyst are used. The processing apparatus U1 is provided with the application mechanism Gp1 and the drying mechanism Gp2 in this order from the upstream side in the conveyance direction of the board|substrate P. The coating mechanism Gp1 has a pressure roller DR1 that winds the substrate P, and a coating roller DR2 that faces the pressure roller DR1. The coating mechanism Gp1 sandwiches the substrate P with the pressure roller DR1 and the application roller DR2 while the supplied substrate P is wound around the pressure roller DR1. Then, the application mechanism Gp1 rotates the pressure roller DR1 and the application roller DR2 to apply the photosensitive functional liquid by the application roller DR2 while moving the substrate P in the conveyance direction. The drying mechanism Gp2 blows drying air such as hot air or dry air to remove the solute (solvent or water) contained in the photosensitive functional liquid, and dries the substrate P coated with the photosensitive functional liquid to form photosensitivity on the substrate P. Functional layer.

The processing device U2 is for forming a photosensitive functional layer on the surface of the substrate P. The substrate P heated from the processing apparatus U1 is heated to a heating device of a predetermined temperature (for example, about 10 to 120 ° C). The processing apparatus U2 is provided with a heating chamber HA1 and a cooling chamber HA2 in this order from the upstream side in the transport direction of the substrate P. The heating chamber HA1 has a plurality of rollers and a plurality of air turn bars therein, and the plurality of rollers and the plurality of air flip bars constitute a transport path of the substrate P. A plurality of rollers are disposed in contact with the back surface of the substrate P, and a plurality of air flip bars are provided on the surface side of the substrate P in a non-contact state. The plurality of rollers and the plurality of air flip levers are transport paths for lengthening the substrate P, and are in a serpentine transport path. The substrate P in the heating chamber HA1 is heated to a predetermined temperature while being conveyed along the meandering conveyance path. The cooling chamber HA2 cools the substrate P to the ambient temperature in order to match the temperature of the substrate P heated in the heating chamber HA1 with the ambient temperature of the post-processing (processing device U3). The cooling chamber HA2 is provided with a plurality of rollers therein, and a plurality of rollers are arranged in a serpentine transport path in the same manner as the heating chamber HA1 in order to lengthen the transport path of the substrate P. The substrate P in the cooling chamber HA2 is cooled while being conveyed along the meandering conveyance path. On the downstream side in the conveying direction of the cooling chamber HA2, a driving roller R3 is provided, and the driving roller R3 is rotated while sandwiching the substrate P passing through the cooling chamber HA2, whereby the substrate P is supplied to the processing device U3.

The processing apparatus (substrate processing apparatus) U3 is an exposure apparatus that supplies a substrate (photosensitive substrate) P on which a photosensitive functional layer is formed from the processing apparatus U2, and which exposes (transfers) a display circuit or wiring. As will be described later in detail, the processing device U3 illuminates the reflective mask M with an illumination beam, and projects a projection beam that is reflected by the illumination beam by the mask M onto the substrate P. The processing device U3 has a drive roller R4 that feeds the substrate P supplied from the processing device U2 to the downstream side in the transport direction, and an edge position controller EPC that adjusts the position of the substrate P in the width direction (Y direction). The driving roller R4 is simultaneously performed while holding the front and back sides of the substrate P By rotating, the substrate P is sent to the downstream side in the conveyance direction, and the substrate P is supplied toward the exposure position. The edge position controller EPC is configured similarly to the edge position controller EPC1, and corrects the position of the substrate P in the width direction so that the width direction of the substrate P at the exposure position becomes the target position. Further, the processing device U3 has two sets of driving rollers R5 and R6 that are sent to the downstream side in the transport direction in a state where the substrate P is exposed to be relaxed. The two sets of driving rollers R5 and R6 are separated in the transport direction of the substrate P. The scheduled interval configuration. The driving roller R5 holds the substrate P on the upstream side of the transported substrate P and the lower side of the substrate P that is sandwiched and transported by the driving roller R6, thereby supplying the substrate P to the processing device U4. At this time, since the substrate P is provided with slack, it is possible to absorb the fluctuation of the conveyance speed which is generated on the downstream side of the drive roller R6 in the conveyance direction, and it is possible to cut off the influence of the fluctuation of the conveyance speed on the exposure processing of the substrate P. Further, in the processing device U3, an alignment microscope AM1 for detecting an alignment mark or the like formed in advance on the substrate P is provided for alignment of an image of a portion of the mask pattern of the mask M with the substrate P. , AM2.

The processing apparatus U4 is a wet processing apparatus which performs wet development processing, electroless plating processing, etc. on the substrate P which has been exposed from the processing apparatus U3. The processing apparatus U4 has three processing tanks BT1, BT2, and BT3 which are stepped in the vertical direction (Z direction) and a plurality of rollers that transport the substrate P. The plurality of rollers are arranged such that the substrate P sequentially passes through the transport paths inside the three processing tanks BT1, BT2, and BT3. A driving roller R7 is provided on the downstream side in the conveying direction of the processing tank BT3, and the driving roller R7 is rotated while sandwiching the substrate P that has passed through the processing tank BT3, whereby the substrate P is supplied to the processing apparatus U5.

Although not shown in the drawings, the processing device U5 is a drying device that dries the substrate P transferred from the processing device U4. The processing device U5 adjusts the moisture content of the substrate P to the substrate P by the processing device U4 to a predetermined moisture content. By the processing device U5 The dried substrate P is transported to the processing device Un via a plurality of processing devices. After being processed by the processing apparatus Un, the substrate P is wound around the collection reel FR2 of the substrate recovery apparatus 4.

The upper control device 5 integrally controls the substrate supply device 2, the substrate recovery device 4, and a plurality of processing devices U1 to Un. The upper control device 5 controls the substrate supply device 2 and the substrate recovery device 4, and transports the substrate P from the substrate supply device 2 to the substrate recovery device 4. Further, the upper control device 5 controls a plurality of processing devices U1 to Un in synchronization with the transfer of the substrate P to perform various processes on the substrate P.

<Exposure device (substrate processing device)>

Next, the configuration of the exposure apparatus (substrate processing apparatus) as the processing apparatus U3 of the first embodiment will be described with reference to Figs. 2 to 4 . Fig. 2 is a view showing the overall configuration of an exposure apparatus (substrate processing apparatus) according to the first embodiment. Fig. 3 is a view showing the arrangement of an illumination area and a projection area of the exposure apparatus shown in Fig. 2. 4 is a view showing the configuration of an illumination optical system and a projection optical system of the exposure apparatus shown in FIG. 2.

In the scanning exposure apparatus of the exposure apparatus U3 shown in FIG. 2, the image of the mask pattern formed on the outer peripheral surface of the cylindrical mask M is projected and exposed to the substrate P while being conveyed in the transport direction (scanning direction). The surface of the substrate P. In addition, in FIGS. 2 and 3, the orthogonal coordinate system orthogonal to the X direction, the Y direction, and the Z direction is the same orthogonal coordinate system as that of FIG.

First, a photomask (mask member) M for the exposure device U3 will be described. The mask M is, for example, a reflective mask made of a metal cylindrical body. The mask M is formed into a cylindrical body having a peripheral surface (circumferential surface) having a curvature radius Rm centered on the first axis AX1 extending in the Y direction, and has a constant thickness in the radial direction. The peripheral surface of the mask M is formed with a mask surface (pattern surface) P1 of a predetermined mask pattern (pattern). The mask surface P1 includes reflecting the light beam in a predetermined direction with high efficiency The high reflection portion and the reflection suppressing portion that does not reflect the light beam in a predetermined direction or is reflected at a low efficiency, the mask pattern is formed by the high reflection portion and the reflection suppressing portion. Since the mask M is made of a metal cylindrical body, it can be manufactured at a low price, and the mask pattern can be used by a high-precision laser beam drawing device (in addition to various patterns for the panel, there are also The case where the alignment mark for alignment, the scale for encoder measurement, and the like are included is precisely formed on the cylindrical outer peripheral surface.

Further, the mask M may be a whole or a part of a pattern for a panel in which one display element is formed, or may be a pattern for a panel in which a plurality of display elements are formed. Further, in the mask M, a plurality of panel patterns may be formed in a circumferential direction around the first axis AX1, or a small panel pattern may be formed in a plurality of layers in a direction parallel to the first axis AX1. Further, the mask M may be a panel pattern in which a pattern for a panel of the first display element and a second display element having a size different from that of the first display element are formed. In addition, the mask M is not limited to the shape of the cylindrical body as long as it has a circumferential surface having a radius of curvature Rm around the first axis AX1. For example, the reticle M may be an arc-shaped plate material having a circumferential surface. Further, the mask M may be in the form of a thin plate, or the thin mask-shaped mask M may be curved to have a circumferential surface.

Next, the exposure device U3 shown in Fig. 2 will be described. The exposure device U3 includes a mask holding mechanism 11, a substrate supporting mechanism 12, an illumination optical system IL, a projection optical system PL, in addition to the above-described driving rollers R4 to R6, edge position controller EPC3, and alignment microscopes AM1 and AM2. And a lower control device 16. The exposure device U3 guides the illumination light beam EL1 emitted from the light source device 13 to the illumination optical system IL and the projection optical system PL, thereby illuminating the image of the mask pattern of the mask M held by the mask holding mechanism 11. Projected to the substrate P supported by the substrate supporting mechanism 12.

The lower control device 16 controls each part of the exposure device U3 so that each part is implemented Reason. The lower control device 16 may be part or all of the upper control device 5 of the component manufacturing system 1. Further, the lower control device 16 may be another device that is controlled by the higher-level control device 5 and is different from the higher-level control device 5. The lower control device 16, for example, includes a computer.

The mask holding mechanism 11 has a mask holding cylinder (mask holding member) 21 that holds the mask M, and a first driving portion 22 that rotates the mask holding cylinder 21. The mask holding cylinder 21 holds the mask M so that the first axis AX1 of the mask M is the center of rotation. The first drive unit 22 is connected to the lower control device 16 and rotates the mask holding cylinder 21 with the first axis AX1 as a center of rotation.

Further, although the mask holding mechanism 11 holds the mask M of the cylindrical body by the mask holding cylinder 21, the present invention is not limited to this configuration. The mask holding mechanism 11 can also wind and hold the thin mask-shaped mask M along the outer peripheral surface of the mask holding cylinder 21. Further, the mask holding mechanism 11 may hold the mask M formed with a pattern on the surface of the sheet material bent in an arc shape on the outer peripheral surface of the mask holding cylinder 21.

The substrate supporting mechanism 12 includes a substrate supporting cylinder 25 that supports the substrate P, a second driving portion 26 that rotates the substrate supporting cylinder 25, a pair of air turn bars ATB1, ATB2, and a pair of guide rollers 27 28 The substrate supporting cylinder 25 is formed in a cylindrical shape having a radius of curvature centered on the second axis AX2 extending in the Y direction and having a peripheral surface (circumferential surface) other than Rfa. Here, the first axis AX1 and the second axis AX2 are parallel to each other, and the surface passing through the first axis AX1 and the second axis AX2 is the center plane CL. One of the circumferential faces of the substrate supporting cylinder 25 is a supporting surface P2 of the supporting substrate P. That is, the substrate supporting cylinder 25 supports the substrate P by winding the substrate P around its supporting surface P2. The second drive unit 26 is connected to the lower control device 16 and rotates the substrate support cylinder 25 with the second axis AX2 as a center of rotation. The pair of air flip levers ATB1 and ATB2 are provided on the upstream side and the downstream side in the transport direction of the substrate P via the substrate supporting cylinders 25, respectively. a pair The air turning levers ATB1 and ATB2 are provided on the surface side of the substrate P, and are disposed on the lower side in the vertical direction (Z direction) from the support surface P2 of the substrate supporting cylinder 25. The pair of guide rollers 27 and 28 are respectively disposed on the upstream side and the downstream side in the transport direction of the substrate P via the pair of air flip levers ATB1 and ATB2. The pair of guide rolls 27 and 28, wherein one of the guide rolls 27 guides the substrate P transported from the drive roll R4 to the air flip lever ATB1, and the other guide roller 28 transports the substrate from the air flip lever ATB2. P is guided to the driving roller R5.

As described above, the substrate supporting mechanism 12 guides the substrate P conveyed from the driving roller R4 to the air turning lever ATB1 by the guide roller 27, and introduces the substrate P passing through the air turning lever ATB1 into the substrate supporting cylinder 25. In the substrate supporting mechanism 12, the substrate supporting cylinder 25 is rotated by the second driving unit 26, and the substrate P introduced into the substrate supporting cylinder 25 is supported by the supporting surface P2 of the substrate supporting cylinder 25 while being conveyed to the air. Rod ATB2. The substrate supporting mechanism 12 guides the substrate P conveyed to the air turning lever ATB2 to the guide roller 28 by the air turning lever ATB2, and guides the substrate P passing through the guide roller 28 to the driving roller R5.

At this time, the first drive unit 22 and the second drive unit 26 are connected to the lower control device 16, and the mask holding cylinder 21 and the substrate support cylinder 25 are synchronously rotated at a predetermined rotational speed ratio, and are formed in the mask M. The image of the mask pattern of the mask surface P1 is continuously projected and exposed on the surface of the substrate P wound around the support surface P2 of the substrate supporting cylinder 25 (the surface curved along the circumferential surface).

The light source device 13 emits an illumination light beam EL1 that is illuminated by the mask M. The light source device 13 has a light source unit 31 and a light guiding member 32. The light source unit 31 emits a light source that is suitable for a predetermined wavelength band of exposure of the photosensitive functional layer on the substrate P and light of a photoactive ultraviolet light band. As the light source unit 31, for example, a light source such as a mercury lamp having a bright line (g line, h line, i line, or the like) of an ultraviolet ray, a laser diode having a oscillating peak at an ultraviolet ray having a wavelength of 450 nm or less, or the like can be used. Solid-state light source such as light-emitting diode (LED), or KrF excimer laser light (wavelength 248 nm) emitting far ultraviolet light (DUV light), ArF excimer laser light (wavelength 193 nm), XeCl excimer laser (wavelength 308 nm) Gas laser source.

Here, the illumination light beam EL1 emitted from the light source device 13 is incident on a polarization beam splitter PBS, which will be described later. In order to suppress the energy loss caused by the separation of the illumination beam EL1 by the polarization beam splitter PBS, the illumination beam EL1 is preferably a beam which is substantially totally reflected by the incident illumination beam EL1 in the polarization beam splitter PBS. The polarizing beam splitter PBS can reflect a linearly polarized light beam that is S-polarized, and penetrates a linearly polarized light beam that is P-polarized. Therefore, it is preferable that the light source unit 31 of the light source device 13 emits a laser beam that is a linearly polarized (S-polarized) light beam by emitting the illumination light beam EL1 incident on the polarization beam splitter PBS. Further, since the energy density of the laser light is high, the illuminance of the light beam projected on the substrate P can be appropriately ensured.

The light guiding member 32 leads the illumination light beam EL1 emitted from the light source unit 31 to the illumination optical system IL. The light guiding member 32 is configured by a relay module using an optical fiber or a mirror. Further, when a plurality of illumination optical systems IL are provided, the light guide member 32 separates the illumination light beams EL1 from the light source unit 31 into a plurality of stripes, and then directs the plurality of illumination light beams EL1 to the plurality of illumination optical systems IL. Further, when the light guide member 32 emits light from a light beam emitted from the light source unit 31, for example, a polarization maintaining fiber can be used as the optical fiber, and the polarization maintaining fiber can be guided while maintaining the polarization of the laser light. Light.

Here, as shown in FIG. 3, the exposure apparatus U3 of the first embodiment is a so-called multi-lens type exposure apparatus. Further, in Fig. 3, a plan view (the left side view in Fig. 3) of the illumination region IR on the mask M held by the mask holding cylinder 21 is viewed from the -Z side, and the substrate support circle is observed from the +Z side. Projection area on the substrate P supported by the cylinder 25 Top view of the PA (picture on the right in Figure 3). The symbol Xs of Fig. 3 represents the moving direction (rotational direction) of the mask holding cylinder 21 and the substrate supporting cylinder 25. In the multi-lens type exposure device U3, a plurality of (in the first embodiment, for example, six) illumination regions IR1 to IR6 illuminate the illumination light beam EL1, and each illumination light beam EL1 is in each illumination region IR1. The plurality of projection light beams EL2 obtained by the reflection of the IR6 are projected onto the substrate P by a plurality of (for example, six in the first embodiment) projection areas PA1 to PA6.

First, a plurality of illumination regions IR1 to IR6 illuminated by the illumination optical system IL will be described. As shown in the left diagram of FIG. 3, a plurality of illumination regions IR1 to IR6 are arranged in two rows in the rotation direction via the center plane CL, and an odd numbered first illumination region IR1 is disposed on the mask M on the upstream side in the rotation direction. In the third illumination region IR3 and the fifth illumination region IR5, the even-numbered second illumination region IR2, the fourth illumination region IR4, and the sixth illumination region IR6 are disposed on the mask M on the downstream side in the rotation direction.

Each of the illumination regions IR1 to IR6 has an elongated trapezoidal (rectangular) region extending in parallel with the short side and the long side in the axial direction (Y direction) of the mask M. At this time, each of the illumination regions IR1 to IR6 of the trapezoid is formed in a region whose short side is on the side of the center plane CL and whose long side is located outside. The odd-numbered first illumination region IR1, the third illumination region IR3, and the fifth illumination region IR5 are arranged at a predetermined interval in the axial direction. Further, the even-numbered second illumination region IR2, the fourth illumination region IR4, and the sixth illumination region IR6 are also arranged at a predetermined interval in the axial direction. At this time, the second illumination region IR2 is disposed between the first illumination region IR1 and the third illumination region IR3 in the axial direction. Similarly, the third illumination region IR3 is disposed between the second illumination region IR2 and the fourth illumination region IR4 in the axial direction. The fourth illumination region IR4 is disposed between the third illumination region IR3 and the fifth illumination region IR5 in the axial direction. The fifth illumination region IR5 is disposed in the fourth illumination region IR4 in the axial direction. Between the sixth illumination area IR6. Each of the illumination regions IR1 to IR6 is disposed such that the triangular portion of the oblique portion of the adjacent trapezoidal illumination region overlaps as viewed from the circumferential direction of the mask M. Further, in the first embodiment, each of the illumination regions IR1 to IR6 is formed as a trapezoidal region, but may be formed as a rectangular region.

Further, the mask M has a pattern forming region A3 in which a mask pattern is formed, and a pattern non-forming region A4 in which a mask pattern is not formed. The pattern non-formation region A4 absorbs the non-reflective region of the illumination light beam EL1, and is disposed to surround the pattern formation region A3 in a frame shape. The first to sixth illumination regions IR1 to IR6 are arranged to cover the full width in the Y direction of the pattern formation region A3.

The illumination optical system IL is provided in a plurality of illumination regions IR1 to IR6 (for example, six in the first embodiment). The illumination light beams EL1 from the light source device 13 are respectively incident on the plurality of illumination optical systems IL1 to IL6. Each of the illumination optical systems IL1 to IL6 leads each illumination light beam EL1 incident from the light source device 13 to each of the illumination regions IR1 to IR6. In other words, the first illumination optical system IL1 leads the illumination light beam EL1 to the first illumination region IR1, and similarly, the second to sixth illumination optical systems IL2 to IL6 guide the illumination light beam EL1 to the second to sixth illumination regions IR2. ~IR6. A plurality of illumination optical systems IL1 to IL6 are arranged in two rows in the circumferential direction of the mask M with the center plane CL interposed therebetween. The plurality of illumination optical systems IL1 to IL6 are disposed on the side of the first, third, and fifth illumination regions IR1, IR3, and IR5 (on the left side in FIG. 2) via the center plane CL, and the first illumination optical system IL1 and the third are disposed. The illumination optical system IL3 and the fifth illumination optical system IL5. The first illumination optical system IL1, the third illumination optical system IL3, and the fifth illumination optical system IL5 are arranged at a predetermined interval in the Y direction. Further, the plurality of illumination optical systems IL1 to IL6 are disposed on the side of the second, fourth, and sixth illumination regions IR2, IR4, and IR6 (on the right side in FIG. 2) via the center plane CL, and the second illumination optical system IL2 is disposed. The fourth illumination optical system IL4 and the sixth illumination optical system IL6. Second illumination optical system IL2, fourth illumination optics The IL4 and the sixth illumination optical system IL6 are arranged at a predetermined interval in the Y direction. At this time, the second illumination optical system IL2 is disposed between the first illumination optical system IL1 and the third illumination optical system IL3 in the axial direction. Similarly, the third illumination optical system IL3 is disposed between the second illumination optical system IL2 and the fourth illumination optical system IL4 in the axial direction. The fourth illumination optical system IL4 is disposed between the third illumination optical system IL3 and the fifth illumination optical system IL5 in the axial direction. The fifth illumination optical system IL5 is disposed between the fourth illumination optical system IL4 and the sixth illumination optical system IL6 in the axial direction. Further, the first illumination optical system IL1, the third illumination optical system IL3, the fifth illumination optical system IL5, the second illumination optical system IL2, the fourth illumination optical system IL4, and the sixth illumination optical system IL6 are viewed from the Y direction. It is symmetrically arranged with the center plane CL as the center.

Next, each of the illumination optical systems IL1 to IL6 will be described with reference to Fig. 4 . In addition, since each of the illumination optical systems IL1 to IL6 has the same configuration, the first illumination optical system IL1 (hereinafter simply referred to as the illumination optical system IL) will be described as an example.

In order to illuminate the illumination area IR (first illumination area IR1) with uniform illumination, the illumination optical system IL applies a light source image (real image or virtual image) formed by the light source device 13 to the pupil position of the illumination optical system IL (corresponding to Fourier) Conversion surface) Kohler illumination method. Further, the illumination optical system IL is a straight oblique illumination system using a polarization beam splitter PBS. The illumination optical system IL has an illumination optical module ILM, a polarization beam splitter PBS, and a quarter-wave plate 41 in this order from the incident side of the illumination light beam EL1 from the light source device 13.

As shown in FIG. 4, the illumination optical module ILM includes a collimating lens 51, a fly-eye lens 52, a plurality of collecting lenses 53, a cylindrical lens 54, and an illumination field of view from the incident side of the illumination beam EL1. 55 and a plurality of relay lenses 56 are provided on the first optical axis BX1. The collimator lens 51 is provided on the emission side of the light guiding member 32 of the light source device 13. The optical axis of the collimating lens 51 Placed on the first optical axis BX. The collimator lens 51 illuminates the entirety of the incident side of the fly-eye lens 52. The fly-eye lens 52 is provided on the emission side of the collimator lens 51. The center of the surface on the emission side of the fly-eye lens 52 is disposed on the first optical axis BX1. The fly-eye lens 52 is formed by a plurality of rod-shaped lenses or the like, and a plurality of point light source images (light collecting points) obtained by subdividing the illumination light beam EL1 from the collimator lens 51 by the respective rod lenses are generated in the fly-eye lens 52. On the side surface, the illumination light beam EL1 subdivided by the rod lens is incident on the condensing lens 53. At this time, the surface on the emission side of the fly-eye lens 52 of the point light source image is generated, and the first concave mirror is disposed by the various lenses of the first concave mirror 72 of the projection optical system PL which is transmitted from the fly-eye lens 52 through the illumination field stop 55 to the later-described projection optical system PL. The pupil plane of the projection optical system PL (PLM) where the reflecting surface of 72 is located is optically conjugated. The condensing lens 53 is provided on the emission side of the fly-eye lens 52. The optical axis of the condensing lens 53 is disposed on the first optical axis BX1. The condensing lens 53 condenses the illumination light beam EL1 from the fly-eye lens 52 to the cylindrical lens 54. The cylindrical lens 54 is a plano-convex cylindrical lens in which the incident side is a flat surface and the emitting side is a convex surface. The cylindrical lens 54 is provided for the emission measurement of the collecting lens 53. The optical axis of the cylindrical lens 54 is disposed on the first optical axis BX1. The cylindrical lens 54 diverges the illumination light beam EL1 in a direction orthogonal to the first optical axis BX1 in the XZ plane. The illumination field stop 55 is disposed adjacent to the exit of the cylindrical lens 54. The opening of the illumination field stop 55 is formed in a trapezoidal or rectangular shape having the same shape as the illumination area IR, and the center of the opening of the illumination field stop 55 is disposed on the first optical axis BX1. At this time, the illumination field stop 55 is disposed on the surface optically conjugate with the illumination region IR on the mask M by the various lenses from the illumination field stop 55 to the mask M. The relay lens 56 is provided for the emission measurement of the illumination field stop 55. The optical axis of the relay lens 56 is disposed on the first optical axis BX1. The relay lens 56 causes the illumination light beam EL1 from the illumination field stop 55 to enter the polarization beam splitter PBS.

When the illumination light beam EL1 is incident on the illumination optical module ILM, the illumination light beam EL1 becomes a comprehensive light beam that is incident on the incident side of the fly-eye lens 52 by the collimator lens 51. Injection into the compound eye The illumination light beam EL1 of the lens 52 is an illumination light beam EL1 from each of the plurality of point light source images, and is incident on the cylindrical lens 54 through the condenser lens 53. The illumination light beam EL1 incident on the cylindrical lens 54 is diverged in the XZ plane in a direction orthogonal to the first optical axis BX1. The illumination light beam EL1 diverged by the cylindrical lens 54 is incident on the illumination field stop 55. The illumination light beam EL1 that has entered the illumination field stop 55 passes through the opening of the illumination field stop 55, and becomes a light beam having the same intensity distribution as the illumination area IR. The illumination beam EL1 of the illumination field stop 55 is incident on the polarization beam splitter PBS through the relay lens 56.

The polarization beam splitter PBS is disposed between the illumination optical module ILM and the center plane CL in the X-axis direction. The polarization beam splitter PBS cooperates with the 1⁄4 wavelength plate 41 to reflect the illumination light beam EL1 from the illumination optical module ILM, and penetrates the projection light beam EL2 reflected by the mask M. In other words, the illumination beam EL1 from the illumination optical module ILM is incident as a reflected beam into the polarization beam splitter PBS, and the projection beam (reflected light) EL2 from the mask M is incident as a penetrating beam into the polarization beam splitter PBS. That is to say, the illumination beam EL1 incident on the polarization beam splitter PBS becomes a reflected beam of the S-polarized linearly polarized light, and the projection beam EL2 incident on the polarization beam splitter PBS becomes a penetrating beam of the P-polarized linearly polarized light. .

As shown in FIG. 4, the polarization beam splitter PBS has a first 稜鏡91, a second 稜鏡92, and a polarization separation surface 93 provided between the first 稜鏡91 and the second 稜鏡92. The first 稜鏡91 and the second 稜鏡92 are made of quartz glass, and are triangular triangles in the XZ plane. The polarization beam splitter PBS is joined to the polarization separation surface 93 by the first 稜鏡91 and the second 稜鏡92 of the triangle, and has a quadrangular shape in the XZ plane.

The first 稜鏡91 is the 射 of the illumination beam EL1 and the projection beam EL2 on the incident side. The second 稜鏡 92 is the 稜鏡 which passes through the exit side of the projection beam EL2 of the polarization separation surface 93. On the polarization separation surface 93, the illumination light beam EL1 and the projection light beam EL2 from the first side 91 toward the second side 92 are incident. The polarization separation surface 93 reflects the S-polarized (linearly polarized) illumination beam EL1 and the P-polarized (linearly polarized) projection beam EL2.

The 1⁄4 wavelength plate 41 is disposed between the polarization beam splitter PBS and the photomask M. The 1⁄4 wavelength plate 41 converts the illumination light beam EL1 reflected by the polarization beam splitter PBS from linearly polarized light (S-polarized light) to circularly polarized light. The circularly polarized illumination beam EL1 is irradiated to the mask M. The 1⁄4 wavelength plate 41 converts the circularly polarized projection light beam EL2 reflected by the mask M into linearly polarized light (P-polarized light).

Next, a plurality of projection areas PA1 to PA6 projected by the projection optical system PL will be described. As shown in the right diagram of FIG. 3, the plurality of projection areas PA1 to PA6 on the substrate P are arranged corresponding to the plurality of illumination areas IR1 to IR6 on the mask M. In other words, the plurality of projection areas PA1 to PA6 on the substrate P are arranged in two rows in the transport direction via the center plane CL, and the first projection area PA1 and the third projection of the odd number are arranged on the substrate P on the upstream side in the transport direction. In the area PA3 and the fifth projection area PA5, the even-numbered second projection area PA2, the fourth projection area PA4, and the sixth projection area PA6 are disposed on the substrate P on the downstream side in the transport direction.

Each of the projection areas PA1 to PA6 has an elongated trapezoidal region extending in the width direction (Y direction) of the substrate P and the long side. Here, each of the projection regions PA1 to PA6 of the trapezoid is a region in which the short side is located on the center plane CL side and the long side thereof is located outside. The odd projection number first projection area PA1, the third projection area PA3, and the fifth projection area PA5 are arranged at a predetermined interval in the width direction. Further, the even projection second projection area PA2, the fourth projection area PA4, and the sixth projection area PA6 are also arranged at a predetermined interval in the width direction. At this time, the second projection area PA2 is disposed between the first projection area PA1 and the third projection area PA3 in the axial direction. Similarly, the third projection area PA3 is disposed in the second projection area PA2 and the fourth projection area PA4 in the axial direction. between. The fourth projection area PA4 is disposed between the third projection area PA3 and the fifth projection area PA5. The fifth projection area PA5 is disposed between the fourth projection area PA4 and the sixth projection area PA6. Similarly to each of the illumination areas IR1 to IR6, each of the projection areas PA1 to PA6 is disposed such that the triangular portion of the oblique portion of the adjacent trapezoidal projection area PA overlaps as viewed from the direction in which the substrate P is transported. At this time, the projection area PA is substantially the same shape as the exposure amount in the overlap region of the adjacent projection area PA and the exposure amount in the non-overlapping region. The first to sixth projection areas PA1 to PA6 are arranged to cover the full width in the Y direction of the exposure area A7 exposed on the substrate P.

Here, in FIG. 2, when viewed in the XZ plane, the circumference from the center point of the illumination area IR1 (and IR3, IR5) on the mask M to the illumination area IR2 (and IR4, IR6) is set to The circumference of the center point of the projection areas PA1 (and PA3, PA5) on the substrate P along the support surface P2 to the center point of the second projection area PA2 (and PA4, PA6) is substantially equal.

The projection optical system PL in the first embodiment described above is provided with six projection areas PA1 to PA6. The projection optical systems PL1 to PL6 are respectively incident on a plurality of projection light beams EL2 reflected by the mask patterns of the respective illumination regions IR1 to IR6. Each of the projection optical systems PL1 to PL6 guides each of the projection light beams EL2 reflected by the mask M to each of the projection areas PA1 to PA6. In other words, the first projection optical system PL1 guides the projection light beam EL2 from the first illumination region IR1 to the first projection region PA1, and similarly, the second to sixth projection optical systems PL2 to PL6 are from the second to the sixth. Each of the projection light beams EL2 of the illumination areas IR2 to IR6 is guided to the second to sixth projection areas PA2 to PA6.

The plurality of projection optical systems PL1 to PL6 are arranged in two rows in the circumferential direction of the mask M with the center plane CL interposed therebetween. The plurality of projection optical systems PL1 to PL6 sandwich the center plane CL, and the first projection light is disposed on the side (the left side in FIG. 2) on which the first, third, and fifth projection regions PA1, PA3, and PA5 are disposed. The system PL1, the third projection optical system PL3, and the fifth projection optical system PL5. The first projection optical system PL1, the third projection optical system PL3, and the fifth projection optical system PL5 are arranged at a predetermined interval in the Y direction. Further, a plurality of illumination optical systems IL1 to IL6 sandwich the center plane CL, and the second projection optical system PL2 is disposed on the side (the right side in FIG. 2) on which the second, fourth, and sixth projection regions PA2, PA4, and PA6 are disposed. 4 Projection optical system PL4 and sixth projection optical system PL6. The second projection optical system PL2, the fourth projection optical system PL4, and the sixth projection optical system PL6 are arranged at a predetermined interval in the Y direction. Here, the second projection optical system PL2 is disposed between the first projection optical system PL1 and the third projection optical system PL3 in the axial direction. Similarly, the third projection optical system PL3 is disposed between the second projection optical system PL2 and the fourth projection optical system PL4 in the axial direction. The fourth projection optical system PL4 is disposed between the third projection optical system PL3 and the fifth projection optical system PL5. The fifth projection optical system PL5 is disposed between the fourth projection optical system PL4 and the sixth projection optical system PL6. Further, the first projection optical system PL1, the third projection optical system PL3, the fifth projection optical system PL5, the second projection optical system PL2, the fourth projection optical system PL4, and the sixth projection optical system PL6 are viewed from the Y direction. It is symmetrically arranged with the center plane CL as the center.

Further, each of the projection optical systems PL1 to PL6 will be described with reference to Fig. 4 . In addition, since each of the projection optical systems PL1 to PL6 has the same configuration, the first projection optical system PL1 (hereinafter simply referred to as the projection optical system PL) will be described as an example.

In the projection optical system PL, the projection light beam EL2 reflected from the illumination region IR (first illumination region IR1) of the mask surface P1 of the mask M is formed on the intermediate image plane P7 in the middle of the pattern of the mask surface P1. image. Further, the projection light beam EL2 from the mask surface P1 to the intermediate image plane P7 is referred to as a first projection light beam EL2a. The intermediate image formed on the intermediate image plane P7 is an inverted image that is 180° point-symmetrical with respect to the image of the mask pattern of the illumination region IR.

The projection optical system PL re-images the projection light beam EL2 emitted from the intermediate image plane P7 on the projection area PA of the projection surface of the substrate P to form a projection image. Further, the projection light beam EL2 from the intermediate image plane P7 to the projection image surface of the substrate P is referred to as a second projection light beam EL2b. The projection image is an inverted image of 180° point symmetry with respect to the intermediate image of the intermediate image plane P7, in other words, an image of the mask pattern of the illumination area IR is an erect image of the same image. The projection optical system PL sequentially includes the quarter-wavelength plate 41, the polarization beam splitter PBS, and the projection optical module PLM from the incident side of the projection light beam EL2 from the mask M.

The 1⁄4 wavelength plate 41 and the polarization beam splitter PBS are used together with the illumination optical system IL. In other words, the illumination optical system IL and the projection optical system PL share a quarter-wavelength plate 41 and a polarization beam splitter PBS.

The first projection light beam EL2a reflected by the illumination region IR is a light beam that is directed toward the outer side in the radial direction of the first axis AX1 of the mask holding cylinder 21, and enters the projection optical system PL. The first projection light beam EL2a that is circularly polarized in the illumination region IR is incident on the projection optical system PL, converted from circularly polarized light to linearly polarized light (P-polarized light) by the 1⁄4 wavelength plate 41, and then incident on the polarization beam splitter PBS. . The first projection light beam EL2a incident on the polarization beam splitter PBS passes through the polarization beam splitter PBS and enters the projection optical module PLM.

As shown in FIG. 4, the projection optical module PLM includes a partial optical system 61 that images an intermediate image on the intermediate image plane P7 and images the projection image on the substrate P, and emits the first projection light beam EL2a and the second projection light beam EL2b. The reflection optical system (light guiding optical system) 62 of the partial optical system 61 and the projection field stop 63 disposed on the intermediate image surface P7 of the intermediate image are incorporated. Further, the projection optical module PLM includes a focus correction optical member 64, an image shifting optical member 65, a magnification correction optical member 66, a rotation correction mechanism 67, and a polarization adjustment mechanism 68.

The partial optical system 61 and the reflective optical system 62 are, for example, telecentric optical refraction optical systems that deform the Dyson system. In the partial optical system 61, the optical axis (hereinafter referred to as the second optical axis BX2) is substantially orthogonal to the center plane CL. The partial optical system 61 includes a first lens group 71 and a first concave mirror (reflecting optical member) 72. The first lens group 71 has a plurality of lens members including a refractive lens (lens member) 71a provided on the center plane CL side, and the optical axes of the plurality of lens members are disposed on the second optical axis BX2. The first concave mirror 72 is disposed on the pupil plane imaged by the various lenses of the fly-eye lens 52 through the illumination field stop 55 to the first concave mirror 72 by a plurality of point light sources generated by the fly-eye lens 52.

The reflective optical system 62 includes a first deflecting member (first optical member and first reflecting member) 76, a second deflecting member (second optical member and third reflecting portion) 77, and a third deflecting member (third optical member and 4 reflection unit 78 and fourth deflection member (fourth optical member and second reflection member) 79. The first deflecting member 76 is a mirror having a first reflecting surface P3. The first reflecting surface P3 reflects the first projection light beam EL2a from the polarization beam splitter PBS, and causes the reflected first projection light beam EL2a to enter the refractive lens 71a of the first lens group 71. The second deflecting member 77 is a mirror having a second reflecting surface P4. The second reflecting surface P4 reflects the first projection light beam EL2a emitted from the refractive lens 71a, and causes the reflected first projection light beam EL2a to enter the projection field stop 63 provided on the intermediate image plane P7. The third deflecting member 78 is a mirror having a third reflecting surface P5. The third reflecting surface P5 reflects the second projection light beam EL2b from the projection field stop 63, and causes the reflected second projection light beam EL2b to enter the refractive lens 71a of the first lens group 71. The fourth deflecting member 79 is a mirror having a fourth reflecting surface P6. The fourth reflecting surface P6 reflects the second projection light beam EL2b emitted from the refractive lens 71a, and causes the reflected second projection light beam EL2b to enter the substrate P. As described above, the second deflecting member 77 and the third deflecting member 78 have the first one from the partial optical system 61. The projection beam EL2a is folded back to reflect the function of the folding mirror of the partial optical system 61. The respective reflecting surfaces P3 to P6 of the first to fourth deflecting members 76, 77, 78, and 79 are planes parallel to the Y-axis in Fig. 4, and are disposed at a predetermined angle in the XZ plane.

The projection field stop 63 has an opening that defines the shape of the projection area PA. That is, the shape of the opening of the projection field stop 63 defines the shape of the projection area PA.

The first projection light beam EL2a from the polarization beam splitter PBS is reflected by the image shifting optical member 65 on the first reflection surface P3 of the first deflecting member 76. The first projection light beam EL2a reflected on the first reflection surface P3 enters the first lens group 71 and passes through a plurality of lens members including the refractive lens 71a, and then enters the first concave mirror 72. At this time, the first projection light beam EL2a passes through the first optical field BX2 of the refractive lens 71a through the visual field region on the upper side in the +Z direction. The first projection light beam EL2a incident on the first concave mirror 72 is reflected by the first concave mirror 72. The first projection light beam EL2a reflected by the first concave mirror 72 is incident on the first lens group 71 and passes through a plurality of lens members including the refractive lens 71a, and is then emitted from the first lens group 71. At this time, the first projection light beam EL2a passes through the first optical field BX2 of the refractive lens 71a through the visual field region on the lower side in the -Z direction. The first projection light beam EL2a emitted from the first lens group 71 is reflected by the second reflection surface P4 of the second deflecting member 77. The first projection light beam EL2a reflected on the second reflection surface P4 enters the projection field stop 63. The first projection light beam EL2a incident on the projection field stop 63 forms an intermediate image of the inverted image of the mask pattern in the illumination region IR.

The second projection light beam EL2b from the projection field stop 63 is reflected by the third reflection surface P5 of the third deflecting member 78. The second projection light beam EL2b reflected on the third reflecting surface P5 is again incident on the first lens group 71, passes through a plurality of lens members including the refractive lens 71a, and is incident on the first concave mirror 72. At this time, the second projection light beam EL2b is from the refractive lens in the first lens group 71. The second optical axis BX2 of the 71a passes through the upper side in the +Z direction and the visual field between the incident side of the first projection light beam EL2a and the emission measurement. The second projection light beam EL2b incident on the first concave mirror 72 is reflected by the first concave mirror 72. The second projection light beam EL2b reflected by the first concave mirror 72 is incident on the first lens group 71 and passes through a plurality of lens members including the refractive lens 71a, and is then emitted from the first lens group 71. At this time, the second projection light beam EL2b passes through the second optical axis BX2 of the refractive lens 71a from the lower side in the -Z direction, and the visual field between the incident side and the emission of the first projection light beam EL2a. . The second projection light beam EL2b emitted from the first lens group 71 is reflected by the fourth reflection surface P6 of the fourth deflecting member 79. The second projection light beam EL2b reflected on the fourth reflection surface P6 is projected onto the projection area PA on the substrate P by the focus correction optical member 64 and the magnification correction optical member 66. The second projection light beam EL2b projected on the projection area PA forms a projection image of the erect image of the mask pattern of the illumination area IR. At this time, the image of the mask pattern in the illumination area IR is projected onto the projection area PA by a factor of (×1).

Here, the field of view area of the projection optical module PLM including the first lens group 71 including the refractive lens 71a and the first concave mirror 72 will be briefly described with reference to FIG. 5. 5 is a view showing a state in which a circular full-image field (reference plane) CIF formed by a projection optical module PLM is developed on the YZ plane in FIG. 5, and a rectangular illumination area IR on the mask M is imaged in the intermediate image plane. The intermediate image Img1 on the projection field stop 63 of P7, the intermediate image Img2 of the trapezoidal shape formed by the projection field stop 63 of the intermediate image plane P7, and the trapezoidal projection area PA on the substrate P are set to the Y axis. The directions are elongated and arranged in the Z-axis direction.

First, the center of the rectangular illumination region IR on the mask M is set at a position (first position) from the center point of the full imaging field of view CIF (the optical axis BX2 passes) to the +Z direction and the eccentric image height value k1. Therefore, to pass the initial imaging light path in the projection optical module PLM (No. The projection light beam EL2a) is formed on the intermediate image Img1 on the projection field stop 63 (intermediate image plane P7), and is observed in the YZ plane, and the illumination region IR is inverted in the up and down direction (Z direction) and the left and right (Y direction). The state is imaged at a position (second position) from the center point of the full imaging field of view CIF to the image height value k1 of the eccentricity in the -Z direction.

The intermediate image Img2 restricts the intermediate image Img1 by the trapezoidal opening of the projection field stop 63. The intermediate image Img2 is formed by bending the optical path by the two deflecting members 77 and 78 disposed before and after the projection field stop 63. Therefore, when viewed in the YZ plane, the image is imaged from the center point of the full imaging field CIF to + The position of the image height value k2 (k2 < k1) in the Z direction (third position). Further, the intermediate image Img2 limited by the projection field stop 63 is imaged on the projection area formed on the substrate P by the second imaging optical path (second projection light beam EL2b) in the projection optical module PLM. Within the PA.

The center point of the image in the projection area PA is re-imaged, and is located at a position from the center point of the full imaging field of view CIF to the image height value k2 (k2 < k1) in the -Z direction when viewed in the YZ plane. On the other hand, the image formed in the projection area PA is formed in the horizontal direction (Y direction) of the mask pattern in the illumination area IR without being inverted, and is formed by equal magnification (×1).

As described above, in the present embodiment, in order to make the imaging light beam from the reticle pattern easily separated in space within the circular imaging field CIF, while limiting the illumination region IR to the elongated rectangular or trapezoidal region, A double pass imaging optical path is formed in the projection optical module PLM by the four deflecting members 76, 77, 78, 79 formed by the usual total reflection mirror. Therefore, the pattern on the mask M can be projected on the substrate P at least in the Y-axis direction (the projection direction of each of the projection optical modules PL1 to PL6) in an equal-fold erect image.

As described above, the first deflecting member 76, the second deflecting member 77, and the third deflecting direction The member 78 and the fourth deflecting member 79 project the incident side view (first incident field of view) of the first projection light beam EL2a, the emission field of view (first emission field of view) of the first projection beam EL2a, and the second projection beam EL2b. The incident side field of view (second incident field of view) and the second field of view of the second projection beam EL2b (second emission field of view) are separated by the reflection optical system 62. Therefore, since the reflection optical system 62 has a configuration in which leakage light is less likely to occur when the first projection light beam EL2a is guided, the reflection optical system 62 has a function of reducing the light amount reduction portion of the amount of leakage light projected on the substrate P. Further, the leaked light is, for example, scattered light generated by scattering of the first projection light beam EL2a, or separated light generated by separation of the first projection light beam EL2a, or reflected light generated by partial reflection of the first projection light beam EL2a. .

Here, the reflection optical system 62 is provided in the Z direction, and is provided in order from the upper side in the order of the first deflecting member 76, the third deflecting member 78, the fourth deflecting member 79, and the second deflecting member 77. Therefore, the first projection light beam EL2a incident on the refractive lens 71a of the first lens group 71 is incident on the side close to the illumination region IR (on the upper side of the refractive lens 71a). Further, the second projection light beam EL2b emitted from the refractive lens 71a of the first lens group 71 is emitted from the side close to the projection area PA (the lower side of the refractive lens 71a). Therefore, the distance between the illumination region IR and the first deflecting member 76 can be shortened, and the distance between the projection region PA and the fourth deflecting member 79 can be shortened, so that the projection optical system PL can be made compact. Further, as shown in FIG. 4, the third deflecting member 78 is disposed between the first deflecting member 76 and the fourth deflecting member 79 in the direction (Z direction) along the full imaging field of view CIF. Further, the positions of the first deflecting member 76 and the fourth deflecting member 79 and the positions of the second deflecting member 77 and the third deflecting member 78 are different from each other in the direction of the second optical axis BX2.

Further, the reflection optical system 62 has a first incident field of view and a first emission field of view. The four fields of view of the second incident field of view and the second field of view (corresponding to IR, Img1, Img2, and PA shown in FIG. 5), therefore, in order to prevent the projection beam EL2 from being repeated in four fields of view, the size of the projection area PA It is best to make a given size. That is, the length of the projection area PA in the scanning direction of the substrate P and the length in the width direction of the substrate P orthogonal to the scanning direction are 1/4 of the length in the scanning direction/length in the width direction. Therefore, the reflection optical system 62 does not repeat the projection light beam EL2 in four fields of view, and the separation projection light beam EL2 can be guided to the partial optical system 61.

Further, the first deflecting member 76, the second deflecting member 77, the third deflecting member 78, and the fourth deflecting member 79 are formed in a slit-like first incident visual field, a first outgoing visual field, and a second incident visual field. And the four fields of view of the second shot field (corresponding to IR, Img1, Img2, and PA shown in FIG. 5) are all rectangular, and are in the width direction of the slit along the full imaging field CIF ( Z direction) is configured separately from each other.

The focus correction optical member 64 is disposed between the fourth deflecting member 79 and the substrate P. The focus correction optical member 64 adjusts the focus state of the reticle pattern image projected on the substrate P. The focus correcting optical member 64 is, for example, inverted by two wedge-shaped turns (inverted in the X direction in Fig. 4) into a parallel plate which is entirely transparent. By setting the pair of turns to the direction of the slope without changing the interval between the faces facing each other, the thickness of the parallel plate can be changed. Accordingly, the effective optical path length of the partial optical system 61 can be finely adjusted, and the in-focus state of the reticle pattern image formed on the intermediate image surface P7 and the projection area PA can be finely adjusted.

The image shifting optical member 65 is disposed between the polarization beam splitter PBS and the first deflecting member 76. Like the offset optical member 65, the image of the mask pattern projected on the substrate P can be moved in the image plane. The offset optical member 65 is composed of a transparent parallel plate glass which is inclined in the XZ plane of FIG. 4 and a parallel parallel plate glass which can be inclined in the YZ plane of FIG. borrow By adjusting the respective tilt amounts of the two parallel flat glass sheets, the image of the mask pattern formed on the intermediate image plane P7 and the projection area PA can be slightly shifted in the X direction and the Y direction.

The magnification correction optical member 66 is disposed between the fourth deflecting member 79 and the substrate P. For the magnification correction optical member 66, for example, three pieces of a concave lens, a convex lens, and a concave lens are coaxially arranged at a predetermined interval, and the front and rear concave lenses are fixed, and the convex lens is movable in the optical axis (main ray) direction. According to this, the image of the reticle pattern formed in the projection area PA can be slightly enlarged or reduced in the same direction while maintaining the imaging state of the telecentric. Further, the optical axes of the three lens groups constituting the magnification correcting optical member 66 are inclined in the XZ plane and are parallel to the chief ray of the projection light beam EL2 (second projection light beam EL2b).

The rotation correcting mechanism 67 rotates the second deflecting member 77 slightly around the axis parallel to (or perpendicular to) the second optical axis BX2 by, for example, an actuator (not shown). By rotating the second deflecting member 77, the rotation correcting mechanism 67 can slightly rotate the image of the mask pattern formed on the intermediate image plane P7 in the plane P7.

The polarization adjusting mechanism 68 rotates the quarter-wavelength plate 41 about an axis orthogonal to the plate surface by an actuator (not shown) to adjust the polarization direction. The polarization adjusting mechanism 68 can adjust the illuminance of the projection light beam EL2 (second projection light beam EL2b) projected on the projection area PA by rotating the quarter-wavelength plate 41.

In the projection optical system PL configured in this manner, the first projection light beam EL2a from the mask M is emitted from the illumination region IR to the normal direction of the mask surface P1 (the radial direction around the first axis AX1), and passes through The 1⁄4 wavelength plate 41, the polarization beam splitter PBS, and the image shifting optical member 65 are incident on the reflection optical system 62. The first projection light beam EL2a incident on the reflection optical system 62 is reflected by the first reflection surface P3 of the first deflection member 76 of the reflection optical system 62, and is incident on a part of the optical system. 61. The first projection light beam EL2a incident on the partial optical system 61 is reflected by the first concave mirror 72 through the first lens group 71 of the partial optical system 61. The first projection light beam EL2a reflected by the first concave mirror 72 is again emitted from the partial optical system 61 through the first lens group 71. The first projection light beam EL2a emitted from the partial optical system 61 is reflected by the second reflection surface P4 of the second deflection member 77 of the reflection optical system 62, and is incident on the projection field stop 63. The second projection light beam EL2b of the projection field stop 63 is reflected by the third reflection surface P5 of the third deflection member 78 of the reflection optical system 62, and is incident on the partial optical system 61 again. The second projection light beam EL2b incident on the partial optical system 61 is reflected by the first concave mirror 72 through the first lens group 71 of the partial optical system 61. The second projection light beam EL2b reflected by the first concave mirror 72 is again emitted from the partial optical system 61 by the first lens group 71. The second projection light beam EL2b emitted from the partial optical system 61 is reflected by the fourth reflection surface P6 of the fourth deflection member 79 of the reflection optical system 62, and is incident on the focus correction optical member 64 and the magnification correction optical member 66. The second projection light beam EL2b emitted from the magnification correction optical member 66 is incident on the projection area PA on the substrate P, and the image of the mask pattern appearing in the illumination region IR is projected onto the projection area PA at a magnification (×1). .

<Component Manufacturing Method>

Next, a method of manufacturing a component will be described with reference to Fig. 6 . Fig. 6 is a flow chart showing the method of manufacturing the device of the first embodiment.

In the device manufacturing method shown in FIG. 6, first, for example, a function and performance design of a display panel formed using a self-luminous element such as an organic EL, and a circuit pattern and a wiring pattern required for designing by CAD or the like are performed (step S201). Next, a mask M of a desired layer amount is produced in accordance with each of various pattern patterns designed by CAD or the like (step S202). And a supply reel FR1 for winding a flexible substrate P (resin film, metal foil film, plastic, etc.) as a substrate of the display panel (Step S203). Further, the roll substrate P prepared in the step S203 may be a surface whose surface is modified as necessary, or a bottom layer (for example, a fine unevenness by an imprint method) may be formed in advance, or a layer of light may be laminated in advance. Inductive functional film or transparent film (insulating material).

Then, an electrode constituting the display panel element or a bottom layer formed of a wiring, an insulating film, a TFT (thin film semiconductor) or the like is formed on the substrate P, and a light-emitting element made of a self-luminous element such as an organic EL is formed on the substrate. Layer (display pixel portion) (step S204). In the step S204, the conventional lithography process for exposing the photoresist layer using the exposure device U3 described in the previous embodiments is included, but the substrate P pattern coated with the photosensitive decane coupling agent instead of the photoresist is also included. Exposure process for forming a pattern of water-repellent on the surface, exposing the pattern of the photo-sensitive catalyst layer, forming a metal film pattern (wiring, electrode, etc.) by electroless plating, or containing a silver-colored process The processing of drawing a pattern such as a conductive ink of a rice particle or the like.

Next, the substrate P is cut for each display panel element continuously manufactured on the long substrate P by a roll, or a protective film (environmentally resistant barrier layer) or a color filter film is bonded to the surface of each display panel element, The components are assembled (step S205). Next, an inspection step of whether the display panel element can be normally operated or whether the desired performance and characteristics are satisfied is performed (step S206). Through the above manner, a display panel (flexible display) can be manufactured.

As described above, in the first embodiment, the first incident field of view, the first emission field of view, and the second incident field of view can be made by the reflective optical system 62 that cooperates with the projection optical system PL (projection optical module PLM). Since the second emission fields are separated from each other, the occurrence of leakage light from the first projection light beam EL2a can be suppressed. Since the reflective optical system 62 can be configured such that leakage light is less likely to be projected on the substrate P, deterioration of the quality of the image projected onto the substrate P can be prevented.

Further, in the first embodiment, the projection area PA can be scanned. Since the length in the length/width direction is 1/4, the first incident field of view, the first emission field of view, and the first projection field of the reflective optical system 62 can be made to have a field of view of the first projection beam EL2a and the second projection beam EL2b. 2 The incident field of view and the second exit field of view are separated without being repeated.

Further, in the first embodiment, since the laser light can be used as the illumination light beam EL1, it is highly suitable for ensuring the illuminance of the second projection light beam EL2b projected on the projection area PA.

In the first embodiment, the position of the first projection light beam EL2a and the second projection light beam EL2b incident on the refractive lens 71a is the upper side of the refractive lens 71a, and the first projection light beam EL2a emitted from the refractive lens 71a is used. The position of the second projection light beam EL2b is set to be lower than the refractive lens 71a. However, as long as the first incident visual field, the first emission visual field, the second imaging visual field, and the second emission visual field are separated from each other, the first projection light beam EL2a and the second projection light beam EL2b are incident on the refractive lens 71a. The injection position is not particularly limited.

[Second Embodiment]

Next, an exposure apparatus U3 according to the second embodiment will be described with reference to Fig. 7 . In the second embodiment, in order to avoid the description of the first embodiment, a description will be given of a portion different from the first embodiment, and the same constituent elements as those of the first embodiment will be assigned to the first embodiment. The same symbols are used to illustrate. Fig. 7 is a view showing the configuration of an illumination optical system and a projection optical system of the exposure apparatus according to the second embodiment. In the exposure apparatus U3 of the first embodiment, the field of view is separated by the reflection optical system 62 of the projection optical system PL, so that leakage light is less likely to occur. In the exposure apparatus U3 of the second embodiment, the imaging position of the projection image formed by the projection light beam EL2 and the imaging position of the defective image formed by the leaked light are formed on the substrate in the reflection optical system 100 of the projection optical system PL. The scanning direction of P is different.

In the exposure apparatus U3 of the second embodiment, the projection optical system PL is derived from light. The incident side of the projection beam EL2 of the cover M sequentially has a quarter-wave plate 41, a polarization beam splitter PBS, and a projection optical module PLM. The projection optical module PLM includes a partial optical system 61 and a reflective optical system (light guide) Optical system 100 and projection field stop 63. In addition, the projection optical module PLM includes the focus correction optical member 64, the image shifting optical member 65, the magnification correction optical member 66, the rotation correcting mechanism 67, and the polarization adjusting mechanism 68, as in the first embodiment. Further, the quarter-wavelength plate 41, the polarization beam splitter PBS, the partial optical system 61, the projection field stop 63, the focus correction optical member 64, the image shifting optical member 65, the magnification correction optical member 66, and the rotation correcting mechanism 67 and the polarization adjusting mechanism 68 have the same configuration, and therefore their description will be omitted.

The reflective optical system 100 includes a first polarization beam splitter (first reflection member) PBS1, a second polarization beam splitter (second reflection member) PBS2, a half-wavelength plate 104, and a first deflecting member (first optical member). The third reflecting portion 105, the second deflecting member (the second optical member and the fourth reflecting portion) 106, the first light blocking plate 111, and the second light blocking plate 112. The first polarization beam splitter PBS1 has a first polarization separation surface P10. The first polarization separation surface P10 reflects the first projection light beam EL2a from the polarization beam splitter PBS1, and causes the reflected first projection light beam EL2a to enter the refractive lens 71a of the first lens group 71. Further, the first polarization separation surface P10 penetrates the second projection light beam EL2b from the intermediate image plane P7, and causes the transmitted second projection light beam EL2b to enter the refractive lens 71a of the first lens group 71. The second polarization beam splitter PBS2 has a second polarization separation surface P11. The second polarization splitting plane P11 penetrates the first projection light beam EL2a from the refractive lens 71a of the first lens group 71, and causes the first projection light beam EL2a that has passed through to enter the first deflecting member 105. Further, the second polarization separation surface P11 reflects the second projection light beam EL2b from the refractive lens 71a of the first lens group 71, and causes the reflected second projection light beam EL2b to be incident on the substrate P. The 1⁄2 wavelength plate 104 converts the first projection light beam EL2a of the S-polarized light reflected by the first polarization beam splitter PBS1 into the first projection light beam of the P-polarized light. EL2a. Further, the half-wavelength plate 104 converts the second projection light beam EL2b that penetrates the P-polarized light of the first polarization beam splitter PBS1 into the second projection light beam EL2b that is S-polarized. The first deflecting member 105 is a mirror having a first reflecting surface P12. The first reflecting surface P12 reflects the first projection light beam EL2a that has passed through the second polarization beam splitter PBS2, and causes the reflected first projection light beam EL2a to enter the projection field stop 63 provided on the intermediate image plane P7. The second deflecting member 106 is a mirror having a second reflecting surface P13. The second reflecting surface P13 reflects the second projection light beam EL2b from the projection field stop 63, and causes the reflected second projection light beam EL2b to enter the first polarization beam splitter PBS1. As described above, the functions of the first deflecting member 105 and the second deflecting member 106 are the folding mirrors that reflect the first projection light beam EL2a from the partial optical system 61 and return to the partial optical system 61 again.

Further, since the first polarization beam splitter PBS1 is provided in the reflection optical system 100, the projection beam of the P-polarized light that has passed through the polarization beam splitter PBS is reflected by the first polarization beam splitter PBS1 in the polarization beam splitter PBS. A 1/2 wavelength plate 107 is provided between the first polarization beam splitter PBS1.

The first light blocking plate 111 is provided between the second polarization beam splitter PBS2 and the substrate P. The first light-shielding plate 111 is configured to block reflected light that is reflected by the second polarization splitting surface P11 of the second polarization beam splitter PBS2 in a portion of the first projection light beam EL2a that is incident on the second polarization beam splitter PBS2 ( The location of the leaked light).

The second light blocking plate 112 is incident between the first polarization beam splitter PBS1 and the second polarization beam splitter PBS2. The second light blocking plate 112 shields the leaked light leaking from the first polarization beam splitter PBS1 to the second polarization beam splitter PBS2.

The first projection light beam EL2a from the P-polarized light of the polarization beam splitter PBS passes through the image shifting optical member 65 and penetrates the 1/2 wavelength plate 107. Passing through the 1⁄2 wavelength plate 107 The projection beam EL2a is converted into S-polarized light and then incident on the first polarization beam splitter PBS1. The first projection light beam EL2a incident on the S-polarized light of the first polarization beam splitter PBS1 is reflected by the first polarization separation surface P10 of the first polarization beam splitter PBS1. The first projection light beam EL2a of the S-polarized light reflected by the first polarization separation surface P10 passes through the 1/2 wavelength plate 104. The first projection light beam EL2a that has passed through the half-wavelength plate 104 is converted into P-polarized light and is incident on the first lens group 71. The first projection light beam EL2a that has entered the first lens group 71 passes through the plurality of lens members including the refractive lens 71a, and then enters the first concave mirror 72. At this time, the first projection light beam EL2a passes through the field of view region (first incident field of view) on the upper side of the refractive lens 71a in the first lens group 71. The first projection light beam EL2a incident on the first concave mirror 72 is reflected by the first concave mirror 72. The first projection light beam EL2a reflected by the first concave mirror 72 enters the first lens group 71 and passes through a plurality of lens members including the refractive lens 71a, and then is emitted from the first lens group 71. At this time, the first projection light beam EL2a passes through the field of view region (first emission field of view) on the lower side of the refractive lens 71a in the first lens group 71. The first projection light beam EL2a emitted from the first lens group 71 is incident on the second polarization beam splitter PBS2. The first projection light beam EL2a that has entered the P-polarized light of the second polarization beam splitter PBS2 passes through the second polarization separation surface P11. The first projection light beam EL2a that has passed through the second polarization separation surface P11 enters the first deflecting member 105 and is reflected by the first reflecting surface P12 of the first deflecting member 105. The first projection light beam EL2a reflected on the first reflection surface P12 enters the projection field stop 63. The first projection light beam EL2a incident on the projection field stop 63 forms an intermediate image of the inverted image of the mask pattern in the illumination region IR.

The second projection light beam EL2b from the projection field stop 63 is reflected by the second reflection surface P13 of the second deflecting member 106. The second projection light beam EL2b reflected on the second reflection surface P13 enters the first polarization beam splitter PBS1. The second projection light beam EL2b that has entered the P-polarized light of the first polarization beam splitter PBS1 penetrates the first polarization separation surface P10. P partial penetration through the first polarization separating surface P10 The second projection light beam EL2b of the light penetrates the 1/2 wavelength plate 104. The second projection light beam EL2b that has passed through the half-wavelength plate 104 is converted into S-polarized light, and then enters the first lens group 71. The second projection light beam EL2b that has entered the first lens group 71 passes through the plurality of lens members including the refractive lens 71a, and then enters the first concave mirror 72. At this time, the second projection beam EL2b passes through the field of view region (second incident field of view) on the upper side of the refractive lens 71a in the first lens group 71. The second projection light beam EL2b incident on the first concave mirror 72 is reflected by the first concave mirror 72. The second projection light beam EL2b reflected by the first concave mirror 72 enters the first lens group 71, passes through a plurality of lens members including the refractive lens 71a, and is emitted from the first lens group 71. At this time, the second projection light beam EL2b passes through the first lens group 71 through the field of view region (second emission field of view) on the lower side of the refractive lens 71a. The second projection light beam EL2b emitted from the first lens group 71 is incident on the second polarization beam splitter PBS2. The second projection light beam EL2b that is incident on the S-polarized light of the second polarization beam splitter PBS2 is reflected on the second polarization separation surface P11. The second projection light beam EL2b reflected by the second polarization separation surface P11 is projected onto the projection area PA on the substrate P by the focus correction optical member 64 and the magnification correction optical member 66. The second projection light beam EL2b projected on the projection area PA forms a projection image of the erect image of the mask pattern of the illumination area IR. At this time, the image of the reticle pattern in the illumination area IR is projected onto the projection area PA at a magnification (×1).

Here, the first polarization beam splitter PBS1, the second polarization beam splitter PBS2, the first deflecting member 105, and the second deflecting member 106 are arranged to be formed by the second projection light beam EL2b reflected by the second polarization beam splitter PBS2. The imaging position of the projection image and the imaging position of the defective image formed by the partial leakage light of the first projection light beam EL2a reflected by the second polarization beam splitter PBS2 are different in the scanning direction of the substrate P. Specifically, the first polarized light is disposed so that the incident position of the first projection light beam EL2a and the incident position of the second projection light beam EL2b are different from the first polarization separation surface P10 of the first polarization beam splitter PBS1. Beam splitter PBS1, second polarizing beam splitter PBS2 The first deflecting member 105 and the second deflecting member 106. With this arrangement, the incident position of the second projection light beam EL2b and the incident position of the first projection light beam EL2a can be made different from the second polarization separation surface P11 of the second polarization beam splitter PBS2. In this way, the imaging position of the projection image of the second projection light beam EL2b reflected on the second polarization separation surface P11 and the image of the partial leakage light of the first projection light beam EL2a reflected on the second polarization separation surface P11 can be imaged. The position is different in the scanning direction of the substrate P.

In this case, the first light blocking plate 111 is disposed at a position that shields the leaked light from the second polarization beam splitter PBS2 toward the substrate P. Therefore, the first light blocking plate 111 allows the projection of the second projection beam EL2b from the second polarization beam splitter PBS2 to the substrate P to the substrate P while shielding the leakage light from the second polarization beam splitter PBS2 toward the substrate P. .

As described above, the first polarization beam splitter PBS1, the second polarization beam splitter PBS2, the first deflecting member 105, the second deflecting member 106, and the first light blocking plate 111 image the projection image only in the scanning direction of the substrate P. The position is different from the imaging position of the defective image, and the leaked light is blocked by the first light blocking plate 111. Therefore, the function of the reflective optical system 100 is as a light amount reducing portion that reduces the amount of light leaked onto the substrate P.

Further, the first projection beam EL2a is incident on the first polarization splitting plane P10 of the first polarization beam splitter PBS1 and the first projection beam EL2a is incident on the second polarization splitting plane P11 of the second polarization beam splitter PBS2. The position is a position symmetrical with respect to the second optical axis BX2. Further, the second projection beam EL2b is incident on the first polarization splitting plane P10 of the first polarization beam splitter PBS1 and the second projection beam EL2b is incident on the second polarization splitting plane P11 of the second polarization beam splitter PBS2. The position is a position symmetrical with respect to the second optical axis BX2. In other words, the first projection beam EL2a is incident on the first polarization splitting plane P10 of the first polarization beam splitter PBS1 and the second projection beam The projection light beam EL2b is placed at a position where the second optical axis BX2 is asymmetrically placed at the position where the second polarization splitting surface P11 of the second polarization beam splitter PBS2 is incident.

When the incident position of the first projection beam EL2 on the first polarization splitting plane P10 and the incident position of the second projection beam EL2b on the second polarization splitting plane P11 are at an asymmetrical position with the second optical axis BX2 interposed therebetween, The projection area PA is shifted from the illumination area IR by the X direction (the second optical axis direction). In this case, in order to make the circumference from the center point of the illumination area IR1 (and IR3, IR5) on the mask M to the illumination area IR2 (and IR4, IR6) and the projection area PA1 on the substrate P ( The circumferences of the center points of PA3 and PA5) to the center of the second projection area PA2 (and PA4, PA6) have the same length, and the first projection optical system PL1 (and PL3, PL5) and the second projection optical system are used. Part of PL2 (and PL4, PL6) is different.

The first projection optical system PL1 (and PL3, PL5) of the odd-numbered (left side of FIG. 7) is placed at the first polarization splitting plane P10 of the first polarization beam splitter PBS1, and the position of the first projection light beam EL2a is entered. The first polarization beam splitter PBS1, the second polarization beam splitter PBS2, and the first deflection member 105 are disposed so that the injection position of the second projection light beam EL2b is shifted to the upper side in the Z direction and on the center side in the X direction. And the second deflecting member 106. Therefore, in the second polarization splitting plane P11 of the second polarization beam splitter PBS2, the incident position of the second projection beam EL2b is compared with the incident position of the first projection beam EL2a, and the position is above the Z direction and X. Outside the direction.

In other words, the first projection optical system PL1 is the reflection portion of the first polarization beam splitter PBS1, the reflection portion of the second deflection member 106, the reflection portion of the second polarization beam splitter PBS2, and the first portion in the Z direction. The order of the reflective portions of the deflecting members 105. Therefore, as shown in FIG. 7, the second deflecting member 106 is disposed in the direction of the full imaging field CIF (Z direction), and is reflected by the reflection portion of the first polarization beam splitter PBS1 and the second polarization beam splitter PBS2. Between the parts. Further, in the first projection optical system PL1, the positions of the reflection portions of the first polarization beam splitter PBS1 and the second polarization beam splitter PBS2 and the positions of the first deflecting member 105 and the second deflecting member 106 are in the second light. The direction of the axis BX2 is different.

The second projection optical system PL2 (and PL4, PL6) of the even number (the right side of FIG. 7) is placed at the first polarization splitting plane P10 of the first polarization beam splitter PBS1, and the incident position of the first projection light beam EL2a is The first polarization beam splitter PBS1, the second polarization beam splitter PBS2, and the first deflection member 105 are disposed so that the injection position of the second projection light beam EL2b is lower than the Z direction and the X direction. And the second deflecting member 106. Therefore, on the second polarization splitting surface P11 of the second polarization beam splitter PBS2, the incident position of the second projection light beam EL2b is compared with the incident position of the first projection light beam EL2a, and the position is below the Z direction and X The center side of the direction.

In other words, the second projection optical system PL2 is a reflection portion of the second deflecting member 106, a reflection portion of the first polarization beam splitter PBS1, a reflection portion of the first deflecting member 105, and a second polarization component in the Z direction. The order of the reflected portions of the beam PBS2. Therefore, as shown in FIG. 7, the first deflecting member 105 is disposed in the reflecting portion of the first polarizing beam splitter PBS1 and the reflecting portion of the second polarizing beam splitter PBS2 in the direction (Z direction) of the full imaging field of view CIF. between. In the second projection optical system PL2, the positions of the reflection portions of the first polarization beam splitter PBS1 and the second polarization beam splitter PBS2, and the first deflection member 105 and the second deflection are the same as those of the first projection optical system PL1. The position of the member 106 is at a different position in the direction of the second optical axis BX2.

Further, not only the reflection portion of the first polarization beam splitter PBS1, the reflection portion of the second polarization beam splitter PBS2, the first deflection member 105, and the second deflection member 106 are formed, but the slit-shaped first incident field of view is formed. Any one of the first field of view, the second field of view, and the second field of view (corresponding to IR, Img1, Img2, and PA shown in FIG. 5) It should be rectangular and arranged separately from each other in the width direction (Z direction) of the slit along the full imaging field of view CIF. Further, in Fig. 5, in the case of the odd-numbered first projection optical system PL1 (and PL3, PL5), the illumination region IR, the intermediate image Img2, the projection region PA, and the intermediate image Img1 are sequentially arranged from the upper side in the Z direction. On the other hand, in the case of the second projection optical system PL2 (and PL4 and PL6) of the even number, the intermediate image Img2, the illumination region IR, the intermediate image Img1, and the projection region PA are sequentially arranged from the upper side in the Z direction.

As described above, by making the first projection optical system PL1 (and PL3, PL5) different from the second projection optical system PL2 (and PL4, PL6), the illumination region IR1 from the mask M can be obtained ( And the circumference ΔDm of the center point of the IR3, IR5) to the illumination area IR2 (and IR4, IR6) and the center point of the projection area PA1 (and PA3, PA5) on the substrate P to the second projection area The circumference ΔDs of the center point of PA2 (and PA4, PA6) is the same length. At this time, since the projection area PA is shifted from the illumination direction IR in the X direction (the second optical axis BX2 direction), the first axis AX1 of the mask holding cylinder 21 and the second axis of the substrate supporting cylinder 25 are formed. AX2 corresponds to the offset of the projection area PA relative to the illumination area IR, and is offset in the direction of the second optical axis BX2.

As described above, in the second embodiment, the imaging position of the projection image formed by the second projection light beam EL2b and the imaging image formed by the leaked light from the first projection light beam EL2a can be formed in the reflection optical system 100. The position is different in the scanning direction of the substrate P, and the leaked light is blocked by the first light blocking plate 111. As described above, since the reflective optical system 100 can shield the leaked light projected on the substrate P, the projected image can be projected onto the substrate P well.

Further, in the second embodiment, the reflection optical system 100 can divide the first projection beam EL2a and the second projection beam EL2b, and can divide the first incident field of view and the first emission. The field of view, the second incident field of view, and the second exit field of view may also be partially repeated. In other words, in the second embodiment, since the fields of view of the first projection beam EL2a and the second projection beam EL2b are not separated as in the first embodiment, the degree of freedom in arrangement of the various optical members of the reflection optical system 100 can be improved.

In the second embodiment, the 1/2 wavelength plate 104 is provided between the first polarization beam splitter PBS1 and the refractive lens 71a. However, the configuration is not limited thereto. For example, a first quarter-wavelength plate may be provided between the first polarization beam splitter PBS1 and the refractive lens 71a, and a second quarter-wavelength plate may be provided between the second polarization beam splitter PBS2 and the refractive lens 71a. In this case, the first quarter-wavelength plate and the second quarter-wavelength plate may be integrated.

[Third embodiment]

Next, an exposure apparatus U3 according to the third embodiment will be described with reference to Fig. 8 . In the description of the third embodiment, in order to avoid the description of the second embodiment, only the differences from the second embodiment will be described, and the same components as those of the second embodiment will be assigned. 2 Embodiments will be described with the same reference numerals. Fig. 8 is a view showing the configuration of a projection optical system of the exposure apparatus of the third embodiment. In the exposure apparatus U3 of the second embodiment, in the reflection optical system 100 of the projection optical system PL, the imaging position of the projection image formed by the second projection light beam EL2b and the imaging position of the defective image formed by the leaked light are used. The scanning directions of the substrates P are different. In the exposure apparatus U3 of the third embodiment, in the reflection optical system 130 of the projection optical system PL, the imaging position of the projection image formed by the projection light beam EL2 and the imaging position of the defective image formed by the leaked light are in the depth direction. (Focus direction) is different. In addition, in FIG. 8, in order to simplify the description of the third embodiment, only the partial optical system 131 and the reflective optical system 130 are displayed. Further, in Fig. 8, the mask surface P1 and the substrate P are arranged in parallel with the XY plane, and the first projection light beam EL2a from the mask surface P1 is formed. The chief ray is perpendicular to the XY plane, and the chief ray of the second projection beam EL2b toward the substrate P is perpendicular to the XY plane.

In the projection optical system PL of the third embodiment, the partial optical system 131 includes the refractive lens 71a and the first concave mirror 72. In addition, since the configurations of the refractive lens 71a and the first concave mirror 72 are the same as those of the first embodiment and the second embodiment, the description thereof is omitted. Further, in the partial optical system 131, a plurality of lens members may be disposed between the refractive lens 71a and the first concave mirror 72, similarly to the second embodiment.

The reflection optical system 130 includes a first polarization beam splitter (first reflection member) PBS1, a second polarization beam splitter (second reflection member) PBS2, a half-wavelength plate 104, and a first deflecting member (first optical member) And the third reflecting portion 105 and the second deflecting member (the second optical member and the fourth reflecting portion) 106. Further, the first polarization beam splitter PBS1, the second polarization beam splitter PBS2, the 1/2 wavelength plate 104, the first deflecting member 105, and the second deflecting member 106 are different from each other in the second embodiment only by a partial angle or the like. The description is substantially the same, and therefore the description thereof is omitted.

Here, in FIG. 8, the first projection light beam EL2a that has entered the first polarization beam splitter PBS1 from the mask surface P1 is shown, and is formed on the first polarization separation surface P10 of the first polarization beam splitter PBS1. The imaginary imaginary first projection beam EL3. At this time, the surface of the virtual first projection light beam EL3 is formed as a virtual mask surface P15. In addition, in FIG. 8, it is assumed that the first projection light beam EL2a that has entered the first deflecting member 105 from the second polarization beam splitter PBS2 is symmetrical with respect to the first reflecting surface P12 of the first deflecting member 105. The first projection beam EL4. At this time, the surface of the virtual first projection light beam EL4 is formed as a virtual intermediate image plane P16.

The first polarization beam splitter PBS1, the second polarization beam splitter PBS2, the first deflection member 105, and the second deflection member 106 are arranged to be reflected by the second polarization beam splitter PBS2. The imaging position of the projection image formed by the projection light beam EL2b and the imaging position of the defective image formed by the partial leakage light of the first projection light beam EL2a reflected by the second polarization beam splitter PBS2 are in the depth direction of the focus (ie, The direction along the chief ray of the imaging beam is different. Specifically, the imaging position of the projected image of the virtual first light beam EL3 on the virtual mask surface P15 is made deeper in the depth direction, and the imaginary first projection light beam EL4 is in the imaginary intermediate image plane P16. The image forming position of the defective image is shallow in the depth direction, and the first polarization beam splitter PBS1, the second polarization beam splitter PBS2, the first deflecting member 105, and the second deflecting member 106 are disposed.

With such an arrangement, a good projection image can be formed on the substrate P by the second projection light beam EL2b reflected by the second polarization separation surface P11 of the second polarization beam splitter PBS2. In addition, a portion of the first projection light beam EL2a reflected by the second polarization splitting surface P11 of the second polarization beam splitter PBS2 leaks light, and a defective image of the mask pattern is formed on the front side of the substrate P. That is, the imaging position of the projected image formed by the second projection light beam EL2b is the projection area PA on the substrate P, and the imaging position of the defective image formed by the leaked light is in the second polarization beam splitter PBS2 and the substrate P. The location between. In this manner, since the imaging position of the defective image is located between the second polarization beam splitter PBS2 and the substrate P, the defective image formed by the leaked light projected onto the substrate P is extremely blurred.

As described above, the first polarization beam splitter PBS1, the second polarization beam splitter PBS2, the first deflecting member 105, and the second deflecting member 106 make the imaging position of the projected image different from the imaging position of the defective image in the depth direction. Therefore, the function of the reflective optical system 130 is to reduce the amount of light of the leaked light projected on the substrate P.

Further, the imaging position of the virtual first optical beam EL3 on the virtual light-receiving surface P15 is deeper in the depth direction, and the imaginary first projection light beam EL4 is false. The imaging position of the defective image of the intermediate image plane P16 is shallow in the depth direction to lengthen the optical path from the mask surface P1 to the first polarization beam splitter PBS1, shortening the PBS2 from the second polarization beam splitter to the intermediate image The light path of the face P7. Therefore, the optical path which is folded back from the second polarization beam splitter PBS2 through the intermediate image plane P7 to the first polarization beam splitter PBS1 can be shortened.

As described above, in the third embodiment, in the reflective optical system 130, the imaging position of the projection image formed by the second projection light beam EL2b and the imaging position of the defective image formed by the leakage light from the first projection light beam EL2a can be obtained. It differs in the depth of focus direction (in the direction of the chief ray of the imaging beam). Therefore, since the reflective optical system 130 can cause the leaked light projected onto the substrate P to be extremely blurred, the amount of light leaking onto the substrate P can be reduced, thereby reducing the projection image projected onto the substrate P. influences.

Further, in the third embodiment, since the field of view is not required to be separated as in the first embodiment, or the incident position of the second polarization separation surface P11 is different as in the second embodiment, the reflection optical system 130 can be improved. Design freedom.

[Fourth embodiment]

Next, an exposure apparatus U3 according to the fourth embodiment will be described with reference to Fig. 9 . In the description of the fourth embodiment, in order to avoid redundancy, only the differences from the first embodiment will be described, and the same components as those in the first embodiment will be given the same reference numerals as in the first embodiment. Explain. Fig. 9 is a view showing the overall configuration of an exposure apparatus (substrate processing apparatus) according to a fourth embodiment. In the exposure apparatus U3 of the first embodiment, the substrate P is supported by the substrate supporting cylinder 25 having the circumferential supporting surface P2, and the exposure apparatus U3 of the fourth embodiment supports the substrate P as The composition of the plane.

In the exposure apparatus U3 of the fourth embodiment, the substrate supporting mechanism 150 has a suspension One of the substrates P is hung to the driving roller 151. The pair of driving rollers 151 are rotated by the second driving portion 26 to move the substrate P in the scanning direction.

Therefore, the substrate supporting mechanism 150 guides the substrate P conveyed from the driving roller R4 from one of the driving rollers 151 to the other driving roller 151, whereby the substrate P is suspended from the pair of driving rollers 151. In the substrate supporting mechanism 150, the pair of driving rollers 151 are rotated by the second driving unit 26, whereby the substrate P suspended by the pair of driving rollers 151 is guided to the driving roller R5.

At this time, since the substrate P of FIG. 9 is a plane substantially parallel to the XY plane, the chief ray of the second projection light beam EL2b projected on the substrate P is perpendicular to the XY plane. When the chief ray of the second projection light beam EL2b projected on the substrate P is perpendicular to the XY plane, the projection optical system PL is on the second polarization separation surface P11 of the second polarization beam splitter PBS2 in accordance with the chief ray of the second projection light beam EL2b. The angle is also appropriate to change.

Further, in the fourth embodiment, similarly to the previous FIG. 2, when viewed in the XZ plane, the center of the illumination region IR1 (and IR3, IR5) on the mask M is illuminated to the illumination region IR2 (and IR4, IR6). The circumference of the center point and the circumference of the center point of the projection areas PA1 (and PA3, PA5) on the substrate P along the support surface P2 to the center point of the second projection area PA2 (and PA4, PA6) Set to be substantially equal.

In the exposure apparatus U3 of Fig. 9, the lower holder control unit 16 rotates the mask holding cylinder 21 and the pair of driving rollers 151 at a predetermined rotational speed ratio, so that it is formed on the mask surface P1 of the mask M. The image of the reticle pattern is continuously exposed to the surface of the substrate P suspended from the pair of driving rollers 151.

As described above, in the fourth embodiment, even when the substrate P is supported in a planar shape, the influence of the leaked light on the projected image formed on the substrate P can be reduced, so that it is good. A good projection image is projected onto the substrate P.

Further, in the above embodiments, the cylindrical mask M is of a reflective type, but may be a penetrating cylindrical mask. In this case, a pattern formed of a light-shielding film is formed on the peripheral surface of the penetrating cylindrical body (quartz tube or the like) having a certain thickness, and will be formed from the inside of the penetrating cylindrical body toward the outer peripheral surface, as shown in the left side of FIG. The illumination optical system and the light source unit for projecting illumination light of each of the illumination areas IR1 to IR6 may be provided inside the cylindrical body. In the case of performing such penetrating illumination, the deflecting beam splitter PBS, the quarter-wavelength plate 41, and the like shown in Figs. 2, 4, and 7 can be omitted.

Further, in each of the embodiments, a cylindrical mask M is used, but a typical planar mask may be used. In this case, the radius Rm of the cylindrical mask M illustrated in FIG. 2 is regarded as infinite, and the chief ray of the imaging beam from the reticle pattern is perpendicular to the mask surface, for example, the first in FIG. 2 is set. The angle of the reflecting surface P3 of the deflecting member 76 may be one.

Further, in the above embodiments, a photomask (hard mask) in which a static pattern corresponding to a pattern to be projected onto the substrate P is formed is used, but it may be in a plurality of projection optical modules PL1 to PL6. The position of each of the illumination areas IR1 to IR6 (the object plane position of each projection optical module) is such that a DMD (Micro Mirror Device) and an SLM (Spatial Light Modulation Element) composed of a plurality of movable micromirrors are disposed. A maskless exposure method in which dynamic pattern light is generated by the DMD and the SLM in synchronization with the transport movement of the substrate P, and the pattern is transferred to the substrate P. In this case, the DMD and the SLM that generate the dynamic pattern correspond to the mask member.

21‧‧‧Photomask retaining cylinder

25‧‧‧Substrate support cylinder

32‧‧‧Light guiding members

41‧‧‧1/4 wavelength plate

51‧‧‧ Collimating lens

52‧‧‧Future eye lens

53‧‧‧ Concentrating lens

54‧‧‧ cylindrical lens

55‧‧‧Lighting field of view

56‧‧‧Relay lens

61‧‧‧Partial Optics

62‧‧‧Reflective Optics

63‧‧‧Projected field of view

64‧‧‧Focus correction optical components

65‧‧‧Optical components for offset

66‧‧‧ magnification correction optical components

67‧‧‧Rotation correction mechanism

68‧‧‧Polarization adjustment mechanism

71‧‧‧1st lens group

71a‧‧‧Reflective lens

72‧‧‧1st concave mirror

76‧‧‧1st deflecting member

77‧‧‧2nd deflecting member

78‧‧‧3rd deflecting member

79‧‧‧4th deflecting member

91‧‧‧第1稜鏡

92‧‧‧第2稜鏡

93‧‧‧ polarized separation surface

CL‧‧‧ center face

BX1‧‧‧1st optical axis

BX2‧‧‧2nd optical axis

EL2a‧‧‧1st projection beam

EL2b‧‧‧2nd projection beam

IL‧‧‧Lighting Optics

ILM‧‧‧Lighting Optical Module

M‧‧‧Photo Mask

P1‧‧‧Material cover

P2‧‧‧ bearing surface

P3‧‧‧1st reflecting surface

P4‧‧‧2nd reflecting surface

P5‧‧‧3rd reflecting surface

P6‧‧‧4th reflecting surface

P7‧‧‧ intermediate image

PBS‧‧‧ polarizing beam splitter

PL‧‧‧Projection Optics

PLM‧‧‧Projection Optical Module

Claims (22)

A substrate processing apparatus for forming a projection image of a pattern of a photomask member on a substrate, comprising: a projection optical system, comprising: a partial optical system that receives a first projection light from the mask member to form a predetermined intermediate image plane Forming an intermediate image of the pattern; and guiding the optical system, the first projection light emitted from the partial optical system is guided to the intermediate image surface, and the first projection light passing through the intermediate image surface is used as the second projection The light is again guided to the partial optical system; the partial image re-imaging projection image is formed on the substrate by the portion of the optical system that is incident on the second projection light; the partial optical system includes the first projection light and the first a lens member into which the projection light is incident, and a reflection optical member that reflects the first projection light and the second projection light that passes through the lens member; and the first projection light from the pattern enters the lens member, and the reflection After the optical member is reflected, the lens member is emitted from the lens member to reach the intermediate image surface; the second projection light from the intermediate image surface is incident on the lens member, and after being reflected by the reflective optical member, the lens member is emitted from the lens member and reaches the lens member. On the substrate, the light guiding optical system includes a first optical member that causes the first projection light from the pattern to enter the lens member, and the first projection light emitted from the lens member enters the intermediate image surface An optical member, a third optical member that causes the second projection light from the intermediate image surface to enter the lens member, and a fourth optical member that causes the second projection light emitted from the lens member to enter the substrate And a first incident field of the first projection light incident on the lens member and a first projection light emitted from the lens member by the first optical member to the fourth optical member 1 projecting a field of view, a second incident field of view of the second projection light incident on the lens member, and a configuration from the lens The second emission fields of the second projection light emitted from the device are separated from each other. The substrate processing apparatus according to claim 1, further comprising: a mask holding member that holds the mask member; and a substrate supporting member that supports the substrate with a supporting surface; the pattern surface of the mask member has a first axis a first circumferential surface having a first radius of curvature; the support surface of the substrate supporting member having a second circumferential surface having a second radius of curvature centered on the second axis; the first axis and the second axis Parallel; the projection optical system is provided with a plurality of illumination regions corresponding to the plurality of illumination regions disposed on the pattern surface of the mask member, and the plurality of projection optical systems are to be from the plurality of illumination regions of the pattern surface The plurality of first projection lights are directed to the plurality of intermediate image planes, and the plurality of second projection lights from the plurality of intermediate image planes are guided to respective projection regions of the plurality of projection regions disposed on the substrate. The substrate processing apparatus according to claim 2, wherein the mask holding member and the substrate supporting member are arranged in two rows in a circumferential direction of the mask member, and the projections are arranged in each of the projections When the projection region of the substrate is offset from the illumination region of the pattern surface in the circumferential direction, the position of the second axis relative to the first axis corresponds to the illumination region in the circumferential direction. a different position of the offset; the center of the illumination region corresponding to the projection optical system of the first row and the center of the illumination region of the projection optical system corresponding to the second row are along the circumferential direction of the reticle member The circumference of the connection is connected to the circumference of the projection area of the projection optical system corresponding to the first line and the center of the projection area of the projection optical system corresponding to the second line along the circumferential direction of the substrate. Same length degree. A substrate processing apparatus for forming a projection image of a pattern of a photomask member on a substrate, comprising: a projection optical system, comprising: a partial optical system that receives a first projection light from the mask member to form a predetermined intermediate image plane Forming an intermediate image of the pattern; and guiding the optical system, the first projection light emitted from the partial optical system is guided to the intermediate image surface, and the first projection light passing through the intermediate image surface is used as the second projection The light is again guided to the partial optical system; the partial image of the second projection light is incident on the substrate, and the intermediate image re-imaging projection image is formed on the substrate; and the light amount reducing portion is formed by the second projection light The imaging position of the projection image is different from the imaging position of the defective image formed by the leakage light of one of the first projection lights, thereby reducing a portion of the first projection light as leaked light and projecting onto the substrate The amount of light. The substrate processing apparatus according to claim 4, wherein the partial optical system includes the first projection light and the lens member into which the second projection light is incident, the first projection light reflected by the lens member, and the first projection light a second projection light reflecting optical member; the first projection light from the pattern is incident on the lens member, and after being reflected by the reflective optical member, the lens member is emitted from the lens member to reach the intermediate image surface; and the intermediate image surface is The second projection light is incident on the lens member, and after being reflected by the reflective optical member, the lens member is emitted from the lens member and reaches the substrate. The substrate processing apparatus according to claim 5, wherein the light amount reducing unit is the light guiding optical system, and includes: a first polarizing beam splitter that reflects the first projection light from the pattern and injects the first projection light into the substrate a lens member that penetrates the second projection light from the intermediate image surface and enters the lens member; a wavelength plate that polarizes the first projection light and the second projection light emitted from the first polarization beam splitter; and a second polarization beam splitter that emits the first projection from the lens member and passes through the wavelength plate After passing through the light, the light enters the intermediate image surface, and the second projection light that is emitted from the lens member and reflected by the wave plate is reflected toward the substrate; and the first optical member is configured to penetrate the second polarized beam splitter. The first projection light is incident on the intermediate image surface, and the second optical member is configured to inject the second projection light from the intermediate image surface into the first polarization beam splitter. The substrate processing apparatus according to claim 6, wherein the light amount reducing unit further includes a first light blocking plate provided between the second polarizing beam splitter and the substrate; and the second polarizing beam splitting Forming, by the second projection light, the imaging position of the projection image formed on the substrate and the leakage light of a portion of the first projection light that is reflected by the second polarization beam splitter The image forming position of the defective image on the substrate differs in a direction along a surface of the substrate; the first light blocking plate is disposed at a position shielding the leaked light from the second polarizing beam splitter toward the substrate. The substrate processing apparatus according to claim 7, wherein the light amount reducing unit further includes a second light shielding plate that shields the leakage light from the first polarization beam splitter toward the second polarization beam splitter. The substrate processing apparatus according to claim 6, wherein the light amount reducing unit causes the projection image formed on the substrate by the second projection light reflected by the second polarization beam splitter The imaging position and the imaging position of the defective image formed by leaking light of a portion of the first projection light that is reflected by the second polarization beam splitter are different in the depth direction. The substrate processing apparatus of claim 9, wherein the optical path of the first projection light from the pattern to the first polarization beam splitter is set to be higher than the second polarization beam splitter to the intermediate image The optical path of the first projection light is long. The substrate processing apparatus according to any one of claims 1 to 10, wherein the substrate is scanned with respect to the projected image; the projected image is limited to a region in which the scanning direction of the substrate is scanned and the scanning The ratio of the lengths of the directions orthogonal to the width direction, that is, the length in the scanning direction/length in the width direction is an elongated region of 1/4 or less. The substrate processing apparatus according to any one of claims 1 to 10, further comprising an illumination optical system that guides illumination light to a pattern surface of the mask member; the illumination light is laser light. The substrate processing apparatus according to any one of claims 4 to 10, further comprising: a mask holding member that holds the mask member; and a substrate supporting member that supports the substrate with a supporting surface; a pattern of the mask member The surface has a first circumferential surface having a first radius of curvature centered on the first axis; and the support surface of the substrate supporting member has a second circumferential surface having a second radius of curvature centered on the second axis; The axis is parallel to the second axis; the projection optical system and each of the plurality of illumination regions disposed on the pattern surface of the mask member a plurality of illumination regions are provided corresponding to the illumination regions, and the plurality of projection optical systems direct a plurality of the first projection lights from the plurality of illumination regions of the pattern surface to the plurality of intermediate image planes, and the plurality of intermediate image planes are from the plurality of intermediate image planes The plurality of second projection lights are guided to respective projection regions of the plurality of projection regions disposed on the substrate. The substrate processing apparatus according to claim 13, wherein the mask holding member and the substrate supporting member are arranged in two rows in a circumferential direction of the mask member, and each of the projections is arranged in each of the projections When the projection region of the substrate is offset from the illumination region of the pattern surface in the circumferential direction, the position of the second axis relative to the first axis corresponds to the illumination region in the circumferential direction. a different position of the offset; the center of the illumination region corresponding to the projection optical system of the first row and the center of the illumination region of the projection optical system corresponding to the second row are along the circumferential direction of the reticle member The circumference of the connection is connected to the circumference of the projection area of the projection optical system corresponding to the first line and the center of the projection area of the projection optical system corresponding to the second line along the circumferential direction of the substrate. Same length. A component manufacturing system comprising: the substrate processing apparatus according to any one of claims 1 to 14; and a substrate supply apparatus that supplies the substrate to the substrate processing apparatus. A method of manufacturing a component, comprising: performing an action of projecting a pattern of the mask member onto the substrate using a substrate processing apparatus according to any one of claims 1 to 14; and applying the projected substrate to the substrate Processing, according to the action of forming an element corresponding to the pattern of the reticle member. A substrate processing apparatus for projecting and exposing a light beam from a pattern in a slit-like field of view on an object surface to an object to be exposed, comprising: a projection optical system in which a light beam from a pattern in the field of view is incident The imaging lens group and the mirror disposed at or near the pupil plane of the imaging lens group are arranged along the optical axis, and the imaging lens group directs the light beam from the field of view toward the mirror, and The mirror lens group is reflected by the mirror to form an image surface conjugate with the field of view region on the object surface side, and a folding mirror is formed on the mirror lens group opposite to the image forming lens group. When the circular full imaging field of view of the projection optical system on the opposite side is a reference plane crossing the optical axis, the field of view region is disposed at a first position on the reference surface offset from the optical axis, by the In the projection optical system, the slit-shaped intermediate image of the field of view region that is initially imaged is placed at the second position, and the light beam that generates the intermediate image passes through the third position, and is turned toward the projection optical system and reversed. The second position is different from the first position in a width direction intersecting the reference surface in a longitudinal direction of the slit, and the third position is in a width direction of the slit along the reference surface Any one of the first position and the second position is different; and a slit-shaped projection image optically conjugate with the intermediate image is formed on the object to be exposed by the projection optical system. The substrate processing apparatus according to claim 17, wherein the projection optical system includes: a first reflecting member that reflects a first light beam from a pattern in a slit-like area of the object surface; And entering the imaging lens group; and the second reflecting member reflects the second light beam emitted from the projection optical system onto the object to be exposed to generate the projection image; The reflection portion of the first light beam of the first reflection member and the reflection portion of the second light beam of the second reflection member are disposed apart from each other along the width direction of the slit of the reference surface. The substrate processing apparatus according to claim 18, wherein the folding mirror has a third reflecting portion that reflects the light beam emitted from the projection optical system toward the reference plane to generate the intermediate image, and The light beam reflected by the third reflecting portion is reflected to the fourth reflecting portion of the projection optical system, and one of the third reflecting portion and the fourth reflecting portion is disposed in the first direction along the reference plane. Between the reflective portion of the reflective member and the reflective portion of the second reflective member. The substrate processing apparatus according to claim 19, wherein a position of each of the reflection portions of the first reflection member and the second reflection member, and the third reflection portion and the fourth reflection portion of the folding mirror are obtained The respective positions are different in the direction of the optical axis of the projection optical system. The substrate processing apparatus according to any one of claims 18 to 20, wherein the first reflection member and the second reflection member are formed by a polarization beam splitter. The substrate processing apparatus according to claim 21, wherein the reflection portion of the first reflection member, the reflection portion of the second reflection member, and the third reflection portion and the fourth reflection portion of the folding mirror are Both are formed in a rectangular shape corresponding to the slit-shaped field of view region, and are disposed apart from each other in the width direction of the slit along the reference surface.