KR102075325B1 - Scanning exposure device and device manufacturing method - Google Patents

Abstract

The first projection light beam EL2a from the mask M is imaged to form an intermediate image, and the second projection light beam EL2b from the intermediate image surface P7 on which the intermediate image is formed is re-imaged onto the substrate P to project the image. A projection optical system PL for forming a light and a light amount reduction unit for reducing the amount of light leaked onto the substrate P generated from the first projection light EL2a, and the projection optical system PL includes a mask M. The first projection light EL2a from the partial optical system 61 projected onto the intermediate image surface P7 and the first projection light EL2a projected from the partial optical system 61 to the intermediate image surface P7. In addition to guiding, it has a reflecting optical system 62 for guiding the second projection light EL2b from the intermediate image surface P7 to the partial optical system 61, and the partial optical system 61 is provided from the intermediate image surface P2. The second projection light EL2b is reimaged to form a projection image on the substrate P. FIG.

Description

Scanning exposure apparatus and device manufacturing method {SCANNING EXPOSURE DEVICE AND DEVICE MANUFACTURING METHOD}

The present invention relates to a substrate processing apparatus, a device manufacturing system, and a device manufacturing method.

Conventionally, as a substrate processing apparatus, the exposure apparatus which arrange | positioned the projection optical system between a mask and a plate (substrate) is known (for example, refer patent document 1). This projection optical system includes a lens group, a planar reflecting mirror, two polarizing beam splitters, two reflecting mirrors, a λ / 4 wave plate and a field stop. In this exposure apparatus, the projection light of S-polarized light illuminated to the projection optical system through the mask is reflected by one polarization beam splitter. Projected light of reflected S-polarized light is converted into circularly polarized light by passing through the λ / 4 wave plate. The projection light of circularly polarized light passes through the lens group and is reflected by the planar reflector. The projected light of the reflected circularly polarized light is converted into P-polarized light by passing through the λ / 4 wave plate. The projection light of P-polarized light passes through the other polarization beam splitter and is reflected by one reflector. The projection light of P-polarized light reflected by one of the reflecting mirrors forms an intermediate image at the field stop. The projection light of P-polarized light which passed the visual field stop is reflected by the other reflecting mirror, and is incident on one polarizing beam splitter again. The projection light of P-polarized light passes through one polarization beam splitter. The projected light of the transmitted P polarized light is converted into circularly polarized light by passing through the λ / 4 wave plate. The projection light of circularly polarized light passes through the lens group and is reflected by the planar reflector. The projected light of the reflected circularly polarized light is converted into S-polarized light by passing through the λ / 4 wave plate. The projection light of S-polarized light is reflected by the other polarizing beam splitter and reaches on a plate.

Patent Document 1: Japanese Patent Application Laid-open No. Hei 8-64501

Here, part of the projection light reflected and transmitted by the polarization beam splitter becomes leakage light. That is, a part of the projection light reflected by the polarization beam splitter is separated, and a part of the separated projection light becomes the leakage light and passes through the polarization beam splitter, or a part of the projection light transmitted by the polarization beam splitter is separated, A part of the separated projection light becomes leakage light and is reflected by the polarization beam splitter. In this case, when leaky light forms on a board | substrate, there exists a possibility that a bad image may be formed on a board | substrate. In this case, since a projection image is formed by projection light on a board | substrate and a bad image is formed by leakage light, there exists a possibility of becoming double exposure.

Embodiments of the present invention have been made in view of the above problems, and an object thereof is a substrate processing apparatus capable of reducing the influence of leaked light on a projection image formed on a substrate and preferably projecting the projection image onto a substrate; A device manufacturing system and a device manufacturing method are provided.

According to the 1st aspect of this invention, the said intermediate image surface is a projection optical system which forms the intermediate image of the said pattern in the predetermined intermediate image surface by the 1st projection light from the pattern of a mask member. A projection optical system for forming a projection image in which the intermediate image is re-formed on the substrate by bending the second projection light traveling from the second substrate to the predetermined substrate again through the projection optical system, and the first projection light A part of which has a light amount reducing unit for reducing the amount of light projected onto the substrate as leaking light, wherein the projection optical system is a partial optical system that enters the first projection light from the pattern to form the intermediate image; The first projection light emitted from the partial optical system is guided to the intermediate image surface, and the second projection light from the intermediate image surface is again returned to the partial image. Has a light guide (導 光) an optical system for guiding to the academic circles, the partial optical system is recrystallized sanghayeo the second projection light from the middle upper surface of the substrate processing apparatus to form the projection image onto the substrate.

According to the 2nd aspect of this invention, the device manufacturing system provided with the substrate processing apparatus which concerns on the 1st aspect of this invention, and the substrate supply apparatus which supplies the said board | substrate to the said substrate processing apparatus are provided.

According to the 3rd aspect of this invention, the pattern of the said mask member is formed by performing a projection exposure to the said board | substrate using the substrate processing apparatus which concerns on the 1st aspect of this invention, and processing the said projected exposure board | substrate. A device manufacturing method is provided that includes.

According to the aspect of the present invention, it is possible to provide a substrate processing apparatus, a device manufacturing system, and a device manufacturing method capable of reducing the light amount of leaked light projected onto a substrate and preferably projecting a projection image onto the substrate.

FIG. 1: is a figure which shows the structure of the device manufacturing system of 1st Embodiment.
FIG. 2 is a diagram illustrating an entire configuration of an exposure apparatus (substrate processing apparatus) according to the first embodiment.
3 is a diagram illustrating an arrangement of an illumination region and a projection region of the exposure apparatus shown in FIG. 2.
4 is a diagram illustrating the configuration of an illumination optical system and a projection optical system of the exposure apparatus shown in FIG. 2.
FIG. 5 is a view in which a circular all-imaging field of view by the projection optical module is developed on the YZ plane.
6 is a flowchart showing a device manufacturing method of the first embodiment.
FIG. 7: is a figure which shows the structure of the illumination optical system and projection optical system of the exposure apparatus of 2nd Embodiment.
8 is a diagram illustrating a configuration of a projection optical system of the exposure apparatus of the third embodiment.
FIG. 9 is a diagram illustrating an overall configuration of an exposure apparatus (substrate processing apparatus) according to a fourth embodiment.

EMBODIMENT OF THE INVENTION The form (embodiment) for implementing this invention is demonstrated in detail, referring drawings. This invention is not limited by the content described in the following embodiment. In addition, the component described below includes the thing which a person skilled in the art can think easily, and the substantially same thing. In addition, the components described below can be appropriately combined. Moreover, various omission, substitution, or a change of a component can be made in the range which does not deviate from the summary of this invention.

[First Embodiment]

The substrate processing apparatus of the first embodiment is an exposure apparatus that performs an exposure process on a substrate, and the exposure apparatus is assembled to a device manufacturing system that manufactures a device by performing various processes on a substrate after exposure. First, a device manufacturing system will be described.

<Device manufacturing system>

FIG. 1: is a figure which shows the structure of the device manufacturing system of 1st Embodiment. The device manufacturing system 1 shown in FIG. 1 is a line (flexible display manufacturing line) which manufactures the flexible display as a device. As a flexible display, organic EL display etc. are mentioned, for example. This device manufacturing system 1 sends out the board | substrate P from the supply roll FR1 which wound the flexible board | substrate P in roll shape, and performs various processes with respect to the board | substrate P sent out continuously. After implementation, it is a so-called roll-to-roll method in which the substrate P after the treatment is wound on the recovery roll FR2 as a flexible device. In the device manufacturing system 1 of 1st Embodiment, the board | substrate P which is a film-shaped sheet is sent out from the supply roll FR1, and the board | substrate P sent out from the supply roll FR1 is sequentially n processing units U1, U2, U3, U4, U5,... And Un) have shown the example until it is wound up by the collection roll FR2. First, the board | substrate P used as the process target of the device manufacturing system 1 is demonstrated.

As the board | substrate P, foil (foil) etc. which consist of metals or alloys, such as a resin film and stainless steel, are used, for example. Examples of the material of the resin film include polyethylene resin, polypropylene resin, polyester resin, ethylene vinyl copolymer resin, polyvinyl chloride resin, cellulose resin, polyamide resin, polyimide resin, polycarbonate resin, polystyrene resin, It contains one or two or more of vinyl acetate resins.

The substrate P is preferably selected such that the coefficient of thermal expansion is not significantly large, for example, so that the amount of deformation due to heat received in various processes performed on the substrate P can be substantially ignored. The thermal expansion coefficient may be set smaller than the threshold value according to the process temperature, for example, by mixing an inorganic filler into the resin film. The inorganic filler may be titanium oxide, zinc oxide, alumina, silicon oxide, or the like, for example. Moreover, the board | substrate P may be the single layer body of the very thin glass about 100 micrometers thickness manufactured by the float method, etc., and the laminated body which bonded the said resin film, foil, etc. to this ultra-thin glass may be sufficient. .

The board | substrate P comprised in this way is wound in roll shape, and becomes roll F1 for supply, and this roll F1 is attached to the device manufacturing system 1. The device manufacturing system 1 equipped with the supply roll FR1 repeatedly performs the various processes for manufacturing a device with respect to the board | substrate P sent out from the supply roll FR1. For this reason, the board | substrate P after a process will be in the state which the some device connected. That is, the board | substrate P sent out from the supply roll FR1 becomes a board | substrate for obtaining a multiface. Moreover, the board | substrate P modified the surface in advance by predetermined | prescribed preprocessing, and activated or the fine partition structure (uneven structure) for precision patterning was formed in the surface. Anything is fine.

The board | substrate P after a process is wound up in roll shape, and is collect | recovered as roll for recovery FR2. The recovery roll FR2 is attached to a dicing apparatus (not shown). The dicing apparatus equipped with the collection roll FR2 sets a plurality of devices by dividing (dicing) the board | substrate P after a process for every device. The dimension of the board | substrate P is about 10 cm-about 2m in the width direction (direction to become short), for example, and the dimension of the longitudinal direction (direction to become long) is 10 m or more. . In addition, the dimension of the board | substrate P is not limited to said dimension.

Next, with reference to FIG. 1, a device manufacturing system is demonstrated. In FIG. 1, the X-direction, the Y-direction, and the Z-direction are orthogonal coordinate systems. The X direction is a direction connecting the supply roll FR1 and the recovery roll FR2 in the horizontal plane. The Y direction is a direction orthogonal to the X direction in the horizontal plane. The Y direction is an axial direction of the supply roll FR1 and the recovery roll FR2. Z direction is the direction (vertical direction) orthogonal to a X direction and a Y direction.

The device manufacturing system 1 is a processing apparatus U1-Un which performs various processes with respect to the board | substrate supply apparatus 2 which supplies the board | substrate P, and the board | substrate P supplied by the board | substrate supply apparatus 2. ), A substrate recovery device 4 for recovering the substrate P processed by the processing devices U1 to Un, and an upper control device for controlling each device of the device manufacturing system 1 ( 5) is provided.

The supply roll FR1 is rotatably attached to the board | substrate supply apparatus 2. The board | substrate supply apparatus 2 is an edge position which adjusts the position in the width direction (Y direction) of the drive roller R1 which sends the board | substrate P from the attached supply roll FR1, and the board | substrate P. It has a controller EPC1. The drive roller R1 rotates while holding both front and back sides of the substrate P, and sends the substrate P in the conveying direction from the supply roll FR1 to the recovery roll FR2, The substrate P is supplied to the processing apparatus U1 to Un. At this time, the edge position controller EPC1 moves the board | substrate P so that the position in the width | variety edge part (edge) of the board | substrate P may fall in the range of +/- 10 micrometers-about several tens of micrometers with respect to a target position. By moving in the width direction, the position in the width direction of the substrate P is corrected.

The recovery roll FR2 is rotatably mounted to the substrate recovery device 4. The board | substrate collection | recovery apparatus 4 is an edge position which adjusts the position in the width direction (Y direction) of the drive roller R2 which pulls the processed board | substrate P after a process to the side of recovery roll FR2, and the board | substrate P. It has a controller EPC2. The board | substrate collection | recovery apparatus 4 rotates, holding both the front and back sides of the board | substrate P with the drive roller R2, pulls the board | substrate P to a conveyance direction, and rotates the collection roll FR2. Thus, the substrate P is wound up. At this time, the edge position controller EPC2 is configured in the same manner as the edge position controller EPC1, and the edge position controller EPC2 is disposed in the width direction of the substrate P such that the end portion (edge) in the width direction of the substrate P does not deviate from the width direction. Correct the position of.

The processing apparatus U1 is a coating apparatus which applies a photosensitive functional liquid to the surface of the board | substrate P supplied from the board | substrate supply apparatus 2. As the photosensitive functional liquid, for example, a photoresist, a photosensitive silane coupling material, a UV curable resin solution, another solution for a photosensitive plating catalyst, and the like are used. The processing apparatus U1 is provided with the coating mechanism Gp1 and the drying mechanism Gp2 in order from the upstream side of the conveyance direction of the board | substrate P. FIG. The coating mechanism Gp1 has the impression cylinder roller DR1 by which the board | substrate P is wound, and the application roller DR2 which opposes the pressure roller DR1. The coating mechanism Gp1 sandwiches and holds the substrate P by the pressing roller DR1 and the applying roller DR2 in a state where the supplied substrate P is wound around the pressing roller DR1. And application | coating mechanism Gp1 apply | coats the photosensitive functional liquid with the application roller DR2, moving the board | substrate P to a conveyance direction by rotating the pressure roller DR1 and the application roller DR2. The drying mechanism Gp2 blows out drying air such as hot air or dry air, removes the solute (solvent or water) contained in the photosensitive functional liquid, and dries the substrate P coated with the photosensitive functional liquid. A photosensitive functional layer is formed on (P).

In order to stabilize the photosensitive functional layer formed on the surface of the board | substrate P, the processing apparatus U2 makes the board | substrate P conveyed from the processing apparatus U1 predetermined temperature (for example, about 10-120 degreeC). It is a heating device to heat up to). The processing apparatus U2 is provided with the heating chamber HA1 and the cooling chamber HA2 in order from the upstream side of the conveyance direction of the board | substrate P. As shown in FIG. The heating chamber HA1 is provided with the some roller and the some air turn bar in the inside, and the some roller and the some air turn bar comprise the conveyance path | route of the board | substrate P. As shown in FIG. The plurality of rollers are provided in rolling contact with the rear surface of the substrate P, and the plurality of air turn bars are provided in a non-contact state on the surface side of the substrate P. FIG. In order to lengthen the conveyance path | route of the board | substrate P, the some roller and the some air turn bar are arrange | positioned as a conveyance path of a meandering shape. The board | substrate P passing through the heating chamber HA1 is heated to predetermined temperature, conveying along a meandering conveyance path | route. The cooling chamber HA2 cools the board | substrate P to environmental temperature so that the temperature of the board | substrate P heated by the heating chamber HA1 may match the environmental temperature of a post process (processing apparatus U3). In the cooling chamber HA2, the some roller is provided in the inside, and the some roller becomes a meandering conveyance path in order to lengthen the conveyance path of the board | substrate P like the heating chamber HA1. It is. The board | substrate P passing through the cooling chamber HA2 is cooled, conveying along a meandering conveyance path | route. On the downstream side in the conveyance direction of the cooling chamber HA2, the drive roller R3 is provided, and the drive roller R3 rotates, holding | maintaining the board | substrate P which passed the cooling chamber HA2, and a board | substrate ( P) is supplied toward the processing apparatus U3.

The processing apparatus (substrate processing apparatus) U3 projects a pattern such as a circuit or wiring for a display onto the substrate (photosensitive substrate) P supplied with the photosensitive functional layer on the surface supplied from the processing apparatus U2. It is an exposure apparatus to expose. Although details will be described later, the processing apparatus U3 illuminates the illumination light flux on the reflective mask M, and projects the projection light flux obtained by reflecting the illumination light flux by the mask M onto the substrate P. It exposes. The processing apparatus U3 adjusts the position in the width direction (Y direction) of the drive roller R4 and the board | substrate P which send the board | substrate P supplied from the processing apparatus U2 to the downstream side of a conveyance direction. It has an edge position controller (EPC3). The driving roller R4 rotates while holding both front and back sides of the substrate P, and feeds the substrate P toward the exposure position by sending the substrate P to the downstream side in the conveying direction. Edge position controller EPC3 is comprised similarly to edge position controller EPC1, and corrects the position in the width direction of board | substrate P so that the width direction of board | substrate P at an exposure position may become a target position. . Moreover, the processing apparatus U3 has two sets of drive rollers R5 and R6 which send the board | substrate P to the downstream side of a conveyance direction, in the state which gave the board | substrate P after exposure. Two sets of drive rollers R5 and R6 are arranged at predetermined intervals in the conveyance direction of the substrate P. As shown in FIG. The drive roller R5 clamps and rotates the upstream side of the board | substrate P to be conveyed, and the drive roller R6 clamps and rotates the downstream side of the board | substrate P to be conveyed, and the board | substrate P is rotated. Is supplied toward the processing apparatus U4. At this time, since the board | substrate P is provided with the looseness, the board | substrate P by the fluctuation | variation of a conveyance speed can absorb the fluctuation | variation of the conveyance speed which generate | occur | produces downstream of the conveyance direction rather than the drive roller R6 ), The influence of the exposure treatment can be insulated. Moreover, in the processing apparatus U3, the alignment mark etc. which were previously formed in the board | substrate P in order to relatively align (image) the image of a part of the mask pattern of the mask M with the board | substrate P, etc. Alignment microscopes AM1 and AM2 which detect this are provided.

The processing apparatus U4 is a wet processing apparatus which performs wet development, electroless plating, and the like on the substrate P after exposure conveyed from the processing apparatus U3. The processing apparatus U4 has three processing tanks BT1, BT2, BT3 layered in the vertical direction (Z direction), and the some roller which conveys the board | substrate P inside. The some roller is arrange | positioned so that it may become the conveyance path | route which the board | substrate P passes in order inside the three process tanks BT1, BT2, and BT3. The drive roller R7 is provided in the downstream side in the conveyance direction of the processing tank BT3, and the driving roller R7 rotates, holding | maintaining the board | substrate P which passed the processing tank BT3, and the board | substrate ( P is supplied toward the processing apparatus U5.

Although illustration is abbreviate | omitted, the processing apparatus U5 is a drying apparatus which dries the board | substrate P conveyed from the processing apparatus U4. The processing apparatus U5 adjusts the moisture content which adheres to the board | substrate P wet-processed by the processing apparatus U4 to predetermined moisture content. The board | substrate P dried by the processing apparatus U5 is conveyed to the processing apparatus Un through several processing apparatuses. And after processing by the processing apparatus Un, the board | substrate P is wound up by the collection roll FR2 of the board | substrate collection apparatus 4.

The host controller 5 collectively controls the substrate supply device 2, the substrate recovery device 4, and the plurality of processing devices U1 to Un. The upper level control apparatus 5 controls the board | substrate supply apparatus 2 and the board | substrate collection apparatus 4, and conveys the board | substrate P toward the board | substrate collection apparatus 4 from the board | substrate supply apparatus 2. In addition, the host controller 5 controls the plurality of processing apparatuses U1 to Un to execute various processes on the substrate P while synchronizing with the transfer of the substrate P. FIG.

<Exposure apparatus (substrate processing apparatus)>

Next, the structure of the exposure apparatus (substrate processing apparatus) as the processing apparatus U3 of 1st Embodiment is demonstrated with reference to FIGS. FIG. 2 is a diagram illustrating an entire configuration of an exposure apparatus (substrate processing apparatus) according to the first embodiment. 3 is a diagram illustrating an arrangement of an illumination region and a projection region of the exposure apparatus shown in FIG. 2. 4 is a diagram illustrating the configuration of an illumination optical system and a projection optical system of the exposure apparatus shown in FIG. 2.

The exposure apparatus U3 shown in FIG. 2 is what is called a scanning exposure apparatus, The image of the mask pattern formed in the outer peripheral surface of the cylindrical mask M, conveying the board | substrate P to a conveyance direction (scanning direction). (Iii) is projected and exposed to the surface of the board | substrate P. FIG. In addition, in FIG.2 and FIG.3, the X direction, the Y direction, and the Z direction orthogonally cross, and it becomes the same rectangular coordinate system as FIG.

First, the mask (mask member) M used for the exposure apparatus U3 is demonstrated. The mask M is, for example, a reflective mask using a metal cylindrical body. The mask M is formed of a cylindrical body having an outer circumferential surface (circumferential surface) that is a radius of curvature Rm around the first axis AX1 extending in the Y-direction, and has a constant thickness in the radial direction. The peripheral surface of the mask M is the mask surface (pattern surface) P1 in which the predetermined mask pattern (pattern) was formed. The mask surface P1 includes a high reflecting portion that reflects the light flux in a predetermined direction with high efficiency, and a reflection suppressing portion that does not reflect the light flux in the predetermined direction or reflects with low efficiency, and the mask pattern includes: It is formed by the high reflection part and the reflection suppression part. Since the mask M is a metal cylindrical body, it can be made inexpensively, and by using a high-precision laser beam drawing device, a mask pattern (a reference mark for position alignment other than various patterns for panels) is used. And the scale for encoder measurement, etc.) can be precisely formed in the cylindrical outer peripheral surface.

In the mask M, all or part of the panel pattern corresponding to one display device may be formed, or the panel pattern corresponding to the plurality of display devices may be formed. In the mask M, a plurality of panel patterns may be repeatedly formed in the circumferential direction around the first axis AX1, and a plurality of small panel patterns may be repeated in a direction parallel to the first axis AX1. The plurality may be formed. In addition, the mask M may be provided with a panel pattern of the first display device and a panel pattern of a second display device having a different size from the first display device. Moreover, the mask M should just have the peripheral surface used as the curvature radius Rm centering on the 1st axis | shaft AX1, and is not limited to the shape of a cylindrical body. For example, the mask M may be a circular plate having a circumferential surface. Moreover, the mask M may be a thin plate shape, and may be made to have a circumferential surface by making the thin mask M curved.

Next, the exposure apparatus U3 shown in FIG. 2 is demonstrated. The exposure apparatus U3 includes the mask holding mechanism 11, the substrate support mechanism 12, and illumination, in addition to the above-described driving rollers R4 to R6, the edge position controller EPC3, and the alignment microscopes AM1 and AM2. The optical system IL, the projection optical system PL, and the lower control device 16 are included. The exposure apparatus U3 guides the illumination light beam EL1 emitted from the light source device 13 to the illumination optical system IL and the projection optical system PL, thereby providing a mask held by the mask holding mechanism 11 ( An image of the mask pattern of M) is projected onto the substrate P supported by the substrate support mechanism 12.

The lower control device 16 controls each unit of the exposure apparatus U3 and causes each unit to execute a process. The lower control device 16 may be part or all of the upper control device 5 of the device manufacturing system 1. In addition, the lower control device 16 may be controlled by the upper control device 5 and may be a device different from the upper control device 5. The lower control apparatus 16 includes a computer, for example.

The mask holding mechanism 11 has a mask holding drum (mask holding member) 21 for holding the mask M and a first drive portion 22 for rotating the mask holding drum 21. The mask holding drum 21 holds the mask M such that the first axis AX1 of the mask M is the rotation center. The 1st drive part 22 is connected to the lower control apparatus 16, and rotates the mask holding drum 21 about the 1st axis | shaft AX1 about a rotation center.

In addition, although the mask holding mechanism 11 hold | maintained the mask M of a cylindrical body by the mask holding drum 21, it is not limited to this structure. The mask holding mechanism 11 may wind and hold the thin plate-shaped mask M along the outer circumferential surface of the mask holding drum 21. Moreover, the mask holding mechanism 11 may hold | maintain the mask M which provided the pattern on the surface of the board | substrate curved in circular arc shape in the outer peripheral surface of the mask holding drum 21. As shown in FIG.

The substrate support mechanism 12 includes a substrate support drum 25 that supports the substrate P, a second drive unit 26 that rotates the substrate support drum 25, and a pair of air turn bars ATB1, ATB2) and a pair of guide rollers 27 and 28. The board | substrate supporting drum 25 is formed in the cylindrical shape which has the outer peripheral surface (circumferential surface) used as the radius of curvature Rfa centering on the 2nd axis AX2 extending in a Y direction. Here, the 1st axis | shaft AX1 and the 2nd axis | shaft AX2 are parallel to each other, and the surface which passes through the 1st axis | shaft AX1 and the 2nd axis | shaft AX2 is made into the center plane CL. A part of the circumferential surface of the board | substrate support drum 25 becomes the support surface P2 which supports the board | substrate P. As shown in FIG. That is, the board | substrate support drum 25 supports the board | substrate P by winding the board | substrate P on the support surface P2. The 2nd drive part 26 is connected to the lower control apparatus 16, and rotates the board | substrate support drum 25 about the 2nd axis AX2 to the rotation center. The pair of air turn bars ATB1 and ATB2 are provided on the upstream side and the downstream side of the conveyance direction of the substrate P with the substrate supporting drum 25 interposed therebetween. The pair of air turn bars ATB1 and ATB2 are provided on the surface side of the substrate P, and are disposed on the lower side than the support surface P2 of the substrate support drum 25 in the vertical direction (Z direction). have. The pair of guide rollers 27 and 28 are provided on the upstream side and the downstream side of the conveyance direction of the board | substrate P, respectively via a pair of air turn bar ATB1 and ATB2. The pair of guide rollers 27 and 28 guide the substrate P conveyed from the driving roller R4 by the one guide roller 27 to the air turn bar ATB1, and the other guide roller. 28 guides the board | substrate P conveyed from the air turn bar ATB2 to the drive roller R5.

Therefore, the board | substrate support mechanism 12 guides the board | substrate P conveyed from the drive roller R4 to the air turn bar ATB1 with the guide roller 27, and guides the air turn bar ATB1. The substrate P having passed through is introduced into the substrate supporting drum 25. The board | substrate support mechanism 12 rotates the board | substrate support drum 25 by the 2nd drive part 26, and the board | substrate P introduced into the board | substrate support drum 25 supports the support surface of the board | substrate support drum 25 It conveys toward the air turn bar ATB2, supporting by P2. The board | substrate support mechanism 12 guides the board | substrate P conveyed by the air turn bar ATB2 to the guide roller 28 by the air turn bar ATB2, and passed the guide roller 28. The board | substrate P is guided by the drive roller R5.

At this time, the lower control apparatus 16 connected to the 1st drive part 22 and the 2nd drive part 26 rotates the mask holding drum 21 and the board | substrate support drum 25 synchronously by predetermined rotational speed ratio. Thus, the image of the mask pattern formed on the mask surface P1 of the mask M is curved along the surface (circumferential surface) of the substrate P wound around the support surface P2 of the substrate support drum 25. On one surface) is successively repeatedly projected and exposed.

The light source device 13 emits the illumination light beam EL1 illuminated by the mask M. As shown in FIG. The light source device 13 has a light source unit 31 and a light guide member 32. The light source part 31 is a light of a predetermined wavelength range suitable for exposure of the photosensitive functional layer on the substrate P, and is a light source that emits light of an ultraviolet region having a strong photoactive effect. As the light source unit 31, for example, a lamp light source such as a mercury lamp having a bright line (g line, h line, i line, etc.) in the ultraviolet region, and a laser diode having an oscillation peak in the ultraviolet region having a wavelength of 450 nm or less. Or gas lasers such as KrF excimer laser light (wavelength 248 nm), ArF excimer laser light (wavelength 193 nm), XeCl excimer laser (wavelength 308 nm), etc. A light source can be used.

Here, the illumination light beam EL1 radiate | emitted from the light source device 13 injects into the polarizing beam splitter PBS mentioned later. The illumination light beam EL1 has an incident light beam EL1 at the polarization beam splitter PBS so as to suppress generation of energy loss due to separation of the illumination light beam EL1 by the polarization beam splitter PBS. It is preferable to set it as the luminous flux which almost reflects. Polarizing beam splitter PBS reflects the light beam used as linearly polarized light of S polarization, and transmits the light beam used as linearly polarized light of P-polarized light. For this reason, it is preferable that the light source part 31 of the light source device 13 emits the laser beam which the illumination light beam EL1 which injects into polarization beam splitter PBS becomes the light beam of linearly polarized light (S polarization | polarized-light). In addition, since the laser beam has a high energy density, the illuminance of the light beam projected onto the substrate P can be appropriately ensured.

The light guide member 32 guides the illumination light beam EL1 radiate | emitted from the light source part 31 to illumination optical system IL. The light guide member 32 is comprised from the optical fiber or the relay module using a mirror. In addition, when the illumination optical system IL is provided with two or more illumination optical systems IL, the light guide member 32 isolate | separates the illumination light beam EL1 from the light source part 31 in plurality, and divides the several illumination light beam EL1 into the some illumination optical system ( IL). In addition, when the light beam emitted from the light source part 31 is a laser beam, the light guide member 32 uses a polarization holding fiber (polarization surface preservation fiber) as an optical fiber, You may guide light, maintaining the polarization state of a laser beam.

Here, as shown in FIG. 3, the exposure apparatus U3 of 1st Embodiment is the exposure apparatus which assumed what is called a multi-lens system. 3, the plan view (left figure of FIG. 3) which looked at the illumination area | region IR on the mask M hold | maintained by the mask holding drum 21 from the -Z side, and the board | substrate support drum 25 are shown in FIG. The top view (right figure of FIG. 3) which looked at projection area PA on the supported board | substrate P from the + Z side is shown. 3, the code | symbol Xs shows the moving direction (rotation direction) of the mask holding drum 21 and the board | substrate supporting drum 25. As shown in FIG. The multi-lens exposure apparatus U3 illuminates the illumination light beam EL1 in the illumination area | regions IR1-IR6 of several (for example, six in 1st embodiment) on the mask M, respectively, and each illumination The plurality of projection light beams EL2 obtained by reflecting the light beams EL1 into the respective illumination regions IR1 to IR6 are projected areas PA1 to plural (for example, six in the first embodiment) on the substrate P. FIG. Projection exposure to PA6).

First, the some illumination area | regions IR1-IR6 illuminated by illumination optical system IL are demonstrated. As shown in the left figure of FIG. 3, several illumination area | regions IR1-IR6 are arrange | positioned in two rows in the rotation direction with the center plane CL interposed, and are odd on the mask M of the upstream of the rotation direction. 1st 1st illumination area | region IR1, 3rd illumination area | region IR3, and 5th illumination area | region IR5 are arrange | positioned, and even-numbered 2nd illumination area | region IR2 is located on the mask M of the downstream side of a rotation direction. , The fourth illumination region IR4 and the sixth illumination region IR6 are disposed.

Each illumination area | region IR1-IR6 becomes an elongate trapezoidal shape (rectangular shape) which has the parallel short side and long side extended in the axial direction (Y direction) of the mask M. As shown to FIG. At this time, each of the trapezoidal illumination regions IR1 to IR6 is a region where the short side is located on the center plane CL side and the long side is located on the outside. The odd first illumination region IR1, the third illumination region IR3, and the fifth illumination region IR5 are arranged at predetermined intervals in the axial direction. Moreover, even-numbered 2nd illumination area | region IR2, 4th illumination area | region IR4, and 6th illumination area | region IR6 are arrange | positioned at the axial direction at predetermined intervals. At this time, 2nd illumination area | region IR2 is arrange | positioned between 1st illumination area | region IR1 and 3rd illumination area | region IR3 in an axial direction. Similarly, 3rd illumination area | region IR3 is arrange | positioned between 2nd illumination area | region IR2 and 4th illumination area | region IR4 in an axial direction. 4th illumination area | region IR4 is arrange | positioned between 3rd illumination area | region IR3 and 5th illumination area | region IR5 in an axial direction. 5th illumination area | region IR5 is arrange | positioned between 4th illumination area | region IR4 and 6th illumination area | region IR6 in an axial direction. Each illumination area | region IR1-IR6 is arrange | positioned so that the triangular parts of the quadrilateral parts of the trapezoid-shaped illumination area | regions which adjoin each other may overlap (overlap) from the circumferential direction of the mask M. As shown to FIG. In addition, in 1st Embodiment, although each illumination area | region IR1-IR6 was made into the trapezoidal area | region, you may be a rectangular area | region.

Moreover, the mask M has the pattern formation area | region A3 in which the mask pattern is formed, and the pattern non-formation area | region A4 in which the mask pattern is not formed. The pattern non-formation area | region A4 is an area which is hard to reflect which absorbs illumination light beam EL1, and is arrange | positioned surrounding the pattern formation area | region A3 in frame shape. The first to sixth illumination regions IR1 to IR6 are arranged to cover the entire width of the pattern formation region A3 in the Y direction.

The illumination optical system IL is provided in plurality (for example, six pieces in 1st Embodiment) according to some illumination area | regions IR1-IR6. The illumination light beam EL1 from the light source device 13 is incident on the illumination optical systems IL1 to IL6, respectively. Each illumination optical system IL1-IL6 guides each illumination light beam EL1 incident from the light source device 13 to each illumination region IR1-IR6, respectively. That is, 1st illumination optical system IL1 guides illumination light beam EL1 to 1st illumination area | region IR1, and similarly, 2nd-6th illumination optical systems IL2-IL6 guide illumination light beam EL1. Guide to the second to sixth illumination regions IR2 to IR6. The plurality of illumination optical systems IL1 to IL6 are arranged in two rows in the circumferential direction of the mask M with the center plane CL interposed therebetween. The plurality of illumination optical systems IL1 to IL6 are disposed on the side (left side in FIG. 2) where the first, third, and fifth illumination regions IR1, IR3, IR5 are disposed with the center plane CL interposed therebetween. The 1st illumination optical system IL1, the 3rd illumination optical system IL3, and the 5th illumination optical system IL5 are arrange | positioned. The 1st illumination optical system IL1, the 3rd illumination optical system IL3, and the 5th illumination optical system IL5 are arrange | positioned at the Y direction at predetermined intervals. Moreover, the some illumination optical system IL1-IL6 is the side (right side of FIG. 2) in which 2nd, 4th, 6th illumination area | regions IR2, IR4, IR6 are arrange | positioned with the center plane CL in between. 2nd illumination optical system IL2, 4th illumination optical system IL4, and 6th illumination optical system IL6 are arrange | positioned at this. 2nd illumination optical system IL2, 4th illumination optical system IL4, and 6th illumination optical system IL6 are arrange | positioned at the Y direction at predetermined intervals. At this time, the second illumination optical system IL2 is disposed between the first illumination optical system IL1 and the third illumination optical system IL3 in the axial direction. Similarly, 3rd illumination optical system IL3 is arrange | positioned between 2nd illumination optical system IL2 and 4th illumination optical system IL4 in an axial direction. 4th illumination optical system IL4 is arrange | positioned between 3rd illumination optical system IL3 and 5th illumination optical system IL5 in an axial direction. 5th illumination optical system IL5 is arrange | positioned between 4th illumination optical system IL4 and 6th illumination optical system IL6 in an axial direction. Moreover, 1st illumination optical system IL1, 3rd illumination optical system IL3, and 5th illumination optical system IL5, 2nd illumination optical system IL2, 4th illumination optical system IL4, and 6th illumination optical system IL6. Is symmetrically arranged about the center plane CL as viewed from the Y direction.

Next, with reference to FIG. 4, each illumination optical system IL1-IL6 is demonstrated. In addition, since each illumination optical system IL1-IL6 has the same structure, 1st illumination optical system IL1 (henceforth simply called "lighting optical system IL") is demonstrated as an example.

The illumination optical system IL illuminates a light source image (real image or virtual image) by the light source device 13 so as to illuminate the illumination region IR (first illumination region IR1) with uniform illuminance. The Kohler illumination method formed at the pupil position (corresponding to the Fourier transform plane) of the optical system IL is applied. Moreover, illumination optical system IL is a fall-off illumination system using polarizing beam splitter PBS. The illumination optical system IL sequentially illuminates the illumination optical module ILM, the polarizing beam splitter PBS, and the quarter-wave plate from the incident side of the illumination light beam EL1 from the light source device 13. (41).

As shown in FIG. 4, the illumination optical module ILM comprises the collimator lens 51, the fly-eye lens 52, and the plurality in order from the incidence side of the illumination light beam EL1. Condenser lens 53, cylindrical lens 54, illumination field stop 55, and a plurality of relay lenses 56, and are provided on first optical axis BX1. The collimator lens 51 is provided on the emission side of the light guide member 32 of the light source device 13. The optical axis of the collimator lens 51 is arrange | positioned on the 1st optical axis BX. The collimator lens 51 irradiates the entire surface on the incident side of the fly's eye lens 52. The fly's eye lens 52 is provided on the emission side of the collimator lens 51. The center of the surface on the emission side of the fly's eye lens 52 is disposed on the first optical axis BX1. The fly's eye lens 52 composed of a plurality of rod lenses or the like subdivides the illumination light beam EL1 from the collimator lens 51 for each rod lens to form a plurality of point light source images. (Condensing spot) is generated on the surface of the exit side of the fly's eye lens 52, and becomes the illumination light beam EL1 subdivided by the rod lens and enters the condenser lens 53. At this time, the surface on the exit side of the fly's eye lens 52 in which the point light source image is generated is the first concave surface of the projection optical system PL described later from the fly's eye lens 52 via the illumination field stop 55. By the various lenses reaching the mirror 72, the reflective surface of the first concave mirror 72 is disposed so as to be optically conjugate with the pupil plane of the projection optical system PL (PLM). . The condenser lens 53 is provided on the emission side of the fly's eye lens 52. The optical axis of the condenser lens 53 is disposed on the first optical axis BX1. The condenser lens 53 condenses the illumination light beam EL1 from the fly's eye lens 52 to the cylindrical lens 54. The cylindrical lens 54 is a planar convex cylindrical lens in which the incident side becomes flat and the exit side is convex. The cylindrical lens 54 is provided on the emission side of the condenser lens 53. The optical axis of the cylindrical lens 54 is disposed on the first optical axis BX1. The cylindrical lens 54 emits the illumination light beam EL1 in a direction orthogonal to the first optical axis BX1 in the XZ plane. The illumination field stop 55 is provided adjacent to the exit side of the cylindrical lens 54. The opening of the illumination field stop 55 is formed in a trapezoidal shape or a rectangular shape which becomes the same shape as the illumination area IR, and the center of the opening of the illumination field stop 55 is on the first optical axis BX1. Is placed. At this time, the illumination visual field stop 55 is arrange | positioned in the surface optically conjugate with illumination region IR on the mask M by the various lenses from the illumination visual field stop 55 to the mask M. As shown in FIG. The relay lens 56 is provided on the emission side of the illumination field stop 55. The optical axis of the relay lens 56 is arrange | positioned on the 1st optical axis BX1. The relay lens 56 causes the illumination light beam EL1 from the illumination field stop 55 to enter the polarizing beam splitter PBS.

When the illumination light beam EL1 enters the illumination optical module ILM, the illumination light flux EL1 becomes a light flux that irradiates the entire surface on the incident side of the fly's eye lens 52 by the collimator lens 51. The illumination light beam EL1 incident on the fly's eye lens 52 becomes the illumination light beam EL1 from each of the plurality of point light sources, and enters the cylindrical lens 54 via the condenser lens 53. do. The illumination light beam EL1 incident on the cylindrical lens 54 diverges in a direction orthogonal to the first optical axis BX1 in the XZ plane. The illumination light beam EL1 emitted by the cylindrical lens 54 enters the illumination field stop 55. The illumination light beam EL1 incident on the illumination field stop 55 passes through the opening of the illumination field stop 55, thereby becoming a light beam having the same intensity distribution as the illumination region IR. The illumination light beam EL1 which has passed through the illumination field stop 55 enters into the polarizing beam splitter PBS via the relay lens 56.

The polarization beam splitter PBS is disposed between the illumination optical module ILM and the center plane CL in the X axis direction. The polarizing beam splitter PBS, in cooperation with the quarter wave plate 41, reflects the illumination light flux EL1 from the illumination optical module ILM, while the projection light flux EL2 reflected by the mask M is reflected. ) Is transmitted. In other words, the illumination light beam EL1 from the illumination optical module ILM enters the polarization beam splitter PBS as the reflection light beam, and the projection light beam (reflected light) EL2 from the mask M is the polarization beam splitter. It enters into PBS as a transmitted light beam. That is, the illumination light beam EL1 incident on the polarization beam splitter PBS is a reflected light flux that becomes linearly polarized light of S polarization, and the projection light beam EL2 incident on the polarization beam splitter PBS is linearly polarized light of P polarization. This is the transmitted light beam.

As shown in FIG. 4, the polarization beam splitter PBS has polarization separation provided between the first prism 91, the second prism 92, and the first prism 91 and the second prism 92. It has a face 93. The 1st prism 91 and the 2nd prism 92 are comprised from quartz glass, and are the triangular prism of a triangular shape in XZ plane. The polarizing beam splitter PBS is formed into a quadrangle in the XZ plane by joining the triangular first prism 91 and the second prism 92 with the polarization separation surface 93 interposed therebetween.

The first prism 91 is a prism on the side on which the illumination light beam EL1 and the projection light beam EL2 enter. The second prism 92 is a prism on the side from which the projection light beam EL2 passing through the polarization splitting surface 93 exits. The illumination light beam EL1 and the projection light beam EL2 which are directed from the first prism 91 to the second prism 92 are incident on the polarization splitting surface 93. The polarization splitting surface 93 reflects the illumination light beam EL1 of S polarization (linear polarization), and transmits the projection light beam EL2 of P polarization (linear polarization).

The quarter wave plate 41 is disposed between the polarizing beam splitter PBS and the mask M. FIG. The quarter wave plate 41 converts the illumination light beam EL1 reflected by the polarization beam splitter PBS from linearly polarized light (S polarization) to circularly polarized light. The circularly polarized illumination light beam EL1 is irradiated to the mask M. FIG. The quarter wave plate 41 converts the projection light beam EL2 of the circularly polarized light reflected by the mask M into linearly polarized light (P polarized light).

Next, the some projection area | regions PA1-PA6 exposed by projection by the projection optical system PL are demonstrated. As shown in the right figure of FIG. 3, the some projection area | region PA1-PA6 on the board | substrate P is arrange | positioned corresponding to the some illumination area | region IR1-IR6 on the mask M. As shown to FIG. That is, the several projection area | regions PA1-PA6 on the board | substrate P are arrange | positioned in two rows in the conveyance direction across the center surface CL, and the odd-numbered agent is made on the board | substrate P of the upstream of the conveyance direction. 1st projection area | region PA1, 3rd projection area | region PA3, and 5th projection area | region PA5 are arrange | positioned, and even-numbered 2nd projection area | region PA2 and 4th are located on the downstream board | substrate P of a conveyance direction. Projection area PA4 and sixth projection area PA6 are arranged.

Each projection area | region PA1-PA6 becomes an elongate trapezoid-shaped area | region which has the short side and long side extended in the width direction (Y direction) of the board | substrate P. As shown in FIG. At this time, each of the trapezoidal projection areas PA1 to PA6 is a region where the short side is located on the center plane CL side and the long side is located on the outside. The odd-numbered 1st projection area | region PA1, 3rd projection area | region PA3, and 5th projection area | region PA5 are arrange | positioned at the width direction at predetermined intervals. Moreover, even-numbered 2nd projection area | region PA2, 4th projection area | region PA4, and 6th projection area | region PA6 are arrange | positioned at the width direction at predetermined intervals. At this time, 2nd projection area | region PA2 is arrange | positioned between 1st projection area | region PA1 and 3rd projection area | region PA3 in an axial direction. Similarly, 3rd projection area | region PA3 is arrange | positioned between 2nd projection area | region PA2 and 4th projection area | region PA4 in an axial direction. 4th projection area | region PA4 is arrange | positioned between 3rd projection area | region PA3 and 5th projection area | region PA5. 5th projection area | region PA5 is arrange | positioned between 4th projection area | region PA4 and 6th projection area | region PA6. Each projection area | region PA1-PA6 is similar to each illumination area | region IR1-IR6, so that the triangular part of the quadrilateral part of the trapezoid-shaped projection area | region PA mutually adjacent may mutually see from the conveyance direction of the board | substrate P ( To overlap). At this time, the projection area PA has a shape in which the exposure amount in the overlapping area of the adjacent projection area PA is substantially the same as the exposure amount in the non-overlapping area. And 1st-6th projection area | regions PA1-PA6 are arrange | positioned so that the whole width | variety of the Y direction of exposure area | region A7 exposed on the board | substrate P may be covered.

Here, in FIG. 2, when viewed in the XZ plane, the circumferential length from the center point of the illumination region IR1 (and IR3, IR5) on the mask M to the center point of the illumination region IR2 (and IR4, IR6) is Substantially the same as the circumferential length from the center point of the projection area PA1 (and PA3, PA5) on the substrate P along the support surface P2 to the center point of the second projection area PA2 (and PA4, PA6) Is set to

Six projection optical systems PL in 1st Embodiment mentioned above are provided in accordance with six projection area | regions PA1-PA6. The plurality of projection light beams EL2 reflected by the mask patterns located in the respective illumination regions IR1 to IR6 enter the projection optical systems PL1 to PL6, respectively. Each projection optical system PL1-PL6 guides each projection light beam EL2 reflected by the mask M to each projection area | region PA1-PA6, respectively. That is, the first projection optical system PL1 guides the projection light beam EL2 from the first illumination region IR1 to the first projection region PA1, and similarly, the second to sixth projection optical systems PL2 to PL6. ) Guides each projection light beam EL2 from the second to sixth illumination regions IR2 to IR6 to the second to sixth projection regions PA2 to PA6.

The plurality of projection optical systems PL1 to PL6 are arranged in two rows in the circumferential direction of the mask M with the center plane CL interposed therebetween. The plurality of projection optical systems PL1 to PL6 are arranged on the side (left side in FIG. 2) where the first, third, and fifth projection regions PA1, PA3, and PA5 are arranged with the center plane CL interposed therebetween. The 1st projection optical system PL1, the 3rd projection optical system PL3, and the 5th projection optical system PL5 are arrange | positioned. The 1st projection optical system PL1, the 3rd projection optical system PL3, and the 5th projection optical system PL5 are arrange | positioned at the Y direction at predetermined intervals. Moreover, the some illumination optical system IL1-IL6 is the side (right side of FIG. 2) in which 2nd, 4th, 6th projection area | region PA2, PA4, PA6 is arrange | positioned with the center plane CL in between. 2nd projection optical system PL2, 4th projection optical system PL4, and 6th projection optical system PL6 are arrange | positioned. 2nd projection optical system PL2, 4th projection optical system PL4, and 6th projection optical system PL6 are arrange | positioned at the Y direction at predetermined intervals. At this time, the second projection optical system PL2 is disposed between the first projection optical system PL1 and the third projection optical system PL3 in the axial direction. Similarly, 3rd projection optical system PL3 is arrange | positioned between 2nd projection optical system PL2 and 4th projection optical system PL4 in an axial direction. 4th projection optical system PL4 is arrange | positioned between 3rd projection optical system PL3 and 5th projection optical system PL5. 5th projection optical system PL5 is arrange | positioned between 4th projection optical system PL4 and 6th projection optical system PL6. Moreover, 1st projection optical system PL1, 3rd projection optical system PL3, and 5th projection optical system PL5, 2nd projection optical system PL2, 4th projection optical system PL4, and 6th projection optical system PL6 Are arranged symmetrically about the center plane CL as viewed from the Y direction.

In addition, with reference to FIG. 4, each projection optical system PL1-PL6 is demonstrated. In addition, since each projection optical system PL1-PL6 has the same structure, 1st projection optical system PL1 (henceforth simply "projection optical system PL") is demonstrated as an example.

The projection optical system PL enters the projection light beam EL2 reflected from the illumination region IR (first illumination region IR1) of the mask surface P1 of the mask M, and enters the intermediate image surface P7. The intermediate image of the pattern shown on the mask surface P1 is formed. In addition, the projection light beam EL2 from the mask surface P1 to the intermediate image surface P7 is referred to as the first projection light beam EL2a. The intermediate image formed on the intermediate upper surface P7 becomes an inverted image which becomes 180 ° point symmetry with respect to the image of the mask pattern of the illumination region IR.

Moreover, the projection optical system PL re-images the projection light beam EL2 radiate | emitted from the intermediate image surface P7 in the projection area | region PA of the projection image surface of the board | substrate P, and forms a projection image. Moreover, the projection light beam EL2 which reaches from the intermediate image surface P7 to the projection image surface of the board | substrate P is made into 2nd projection light beam EL2b. The projected image is an inverted image that is 180 ° point symmetrical with respect to the intermediate image of the intermediate image surface P7, in other words, an upright image that becomes the same image with respect to the image of the mask pattern of the illumination region IR. (正 立 像) becomes. This projection optical system PL is the said quarter wave plate 41, the said polarizing beam splitter PBS, and projection optics in order from the incident side of the projection light beam EL2 from the mask M in order. It has a module (PLM).

The quarter wave plate 41 and the polarizing beam splitter PBS are combined with the illumination optical system IL. In other words, the illumination optical system IL and the projection optical system PL share the quarter wave plate 41 and the polarization beam splitter PBS.

The first projection light beam EL2a reflected from the illumination region IR becomes a telecentric light beam directed toward the outer side in the radial direction of the first axis AX1 of the mask holding drum 21, and is a projection optical system. It enters (PL). The first projection light beam EL2a of circularly polarized light reflected by the illumination region IR is converted into circularly polarized light (P polarized light) from circularly polarized light by the quarter wave plate 41 when it enters the projection optical system PL. And then incident on the polarizing beam splitter PBS. The first projection light beam EL2a incident on the polarization beam splitter PBS passes through the polarization beam splitter PBS and then enters the projection optical module PLM.

As shown in FIG. 4, the projection optical module PLM forms the intermediate image on the intermediate image surface P7, and forms the projection image on the board | substrate P, and the partial optical system 61, A reflection optical system (guiding optical system) 62 which causes the first projection light beam EL2a and the second projection light beam EL2b to enter the projection vision aperture disposed on the intermediate image surface P7 on which the intermediate image is formed ( 63). The projection optical module PLM includes a focus correction optical member 64, an image shift optical member 65, a magnification correction optical member 66, a rotation correction mechanism 67, and polarization. The adjusting mechanism 68 is provided.

The partial optical system 61 and the reflective optical system 62 are telecentric reflective refractive optical systems in which the Dyson system is modified, for example. In the partial optical system 61, its optical axis (hereinafter referred to as "second optical axis BX2") is substantially perpendicular to the center plane CL. The partial optical system 61 includes a first lens group 71 and a first concave mirror (reflective optical member) 72. The first lens group 71 has a plurality of lens members including a refractive lens (lens member) 71a provided on the center plane CL side, and the optical axis of the plurality of lens members is the second optical axis BX2. It is arranged on. The first concave mirror 72 has a plurality of point light sources generated by the fly's eye lens 52 from the fly's eye lens 52 via the illumination field stop 55. It is arrange | positioned at the pupil plane image-formed by the various lenses which reach | attach).

The reflective optical system 62 includes a first deflection member (first optical member and a first reflection member) 76, a second deflection member (second optical member and a third reflection portion) 77, and a third deflection. A member (third optical member and fourth reflecting portion) 78 and a fourth deflection member (fourth optical member and second reflecting member) 79 are provided. The first deflection member 76 is a reflection mirror having a first reflection surface P3. The first reflection surface P3 reflects the first projection light beam EL2a from the polarization beam splitter PBS, and reflects the first projection light beam EL2a that is reflected to the refractive lens 71a of the first lens group 71. ) To enter. The second deflection member 77 is a reflection mirror having a second reflection surface P4. The second reflecting surface P4 reflects the first projection light beam EL2a emitted from the refractive lens 71a, and the projection view aperture 63 provided with the reflected first projection light beam EL2a on the intermediate image surface P7. ) To enter. The third deflection member 78 is a reflection mirror having a third reflection surface P5. The third reflection surface P5 reflects the second projection light beam EL2b from the projection field stop 63, and reflects the second projection light beam EL2b that reflects the refractive lens 71a of the first lens group 71. ) To enter. The fourth deflection member 79 is a reflection mirror having a fourth reflection surface P6. The fourth reflecting surface P6 reflects the second projection light beam EL2b emitted from the refractive lens 71a and causes the reflected second projection light beam EL2b on the substrate P. As shown in FIG. Thus, the 2nd deflecting member 77 and the 3rd deflecting member 78 reflect the flap reflector which reflects the 1st projection light beam EL2a from the partial optical system 61 to be bent toward the partial optical system 61 again. It is functioning as. Each of the reflective surfaces P3 to P6 of the first to fourth deflecting members 76, 77, 78, and 79 is a plane parallel to the Y axis in FIG. 4, and is inclined at a predetermined angle within the XZ plane.

The projection field stop 63 has an opening that defines the shape of the projection area PA. That is, the shape of the opening of the projection field stop 63 defines the shape of the projection area PA.

The first projection light beam EL2a from the polarization beam splitter PBS passes through the optical member 65 for image shift and is reflected by the first reflection surface P3 of the first deflection member 76. . The first projection light beam EL2a reflected by the first reflecting surface P3 enters the first lens group 71 and passes through the plurality of lens members including the refractive lens 71a, and then first concave. It enters into the surface mirror 72. At this time, the 1st projection light beam EL2a passes through the viewing area of the upper side of + Z direction from the 2nd optical axis BX2 of the refractive lens 71a in the 1st lens group 71. FIG. The first projection light beam EL2a incident on the first concave mirror 72 is reflected by the first concave mirror 72. The first projection light beam EL2a reflected by the first concave mirror 72 enters the first lens group 71, passes through the plurality of lens members including the refractive lens 71a, and then the first It exits from the lens group 71. At this time, the 1st projection light beam EL2a passes through the visual field area of the lower side of-Z direction from the 2nd optical axis BX2 of the refractive lens 71a in the 1st lens group 71. The first projection light beam EL2a emitted from the first lens group 71 is reflected by the second reflection surface P4 of the second deflection member 77. The first projection light beam EL2a reflected by the second reflection surface P4 enters the projection field stop 63. The first projection light beam EL2a incident on the projection field stop 63 forms an intermediate image that becomes an inverted image of the mask pattern in the illumination region IR.

The second projection light beam EL2b from the projection field stop 63 is reflected by the third reflection surface P5 of the third deflection member 78. The second projection light beam EL2b reflected by the third reflecting surface P5 again enters the first lens group 71 and passes through the plurality of lens members including the refractive lens 71a, and then the first It enters into the concave mirror 72. At this time, the 2nd projection light beam EL2b is the upper side of + Z direction from the 2nd optical axis BX2 of the refractive lens 71a in the 1st lens group 71, and is 1st projection light beam EL2a. Passes through the field of view between the incident side and the exit side. The second projection light beam EL2b incident on the first concave mirror 72 is reflected by the first concave mirror 72. The second projection light beam EL2b reflected by the first concave mirror 72 enters the first lens group 71 and passes through the plurality of lens members including the refractive lens 71a, and then the first It exits from the lens group 71. At this time, the second projection light beam EL2b is the lower side in the -Z direction from the second optical axis BX2 of the refractive lens 71a in the first lens group 71, and the first projection light beam EL2a. Passes through the field of view between the incident side and the exit side. The second projection light beam EL2b emitted from the first lens group 71 is reflected by the fourth reflection surface P6 of the fourth deflection member 79. The second projection light beam EL2b reflected by the fourth reflective surface P6 passes through the focus correction optical member 64 and the magnification correction optical member 66 and projects the projection area PA on the substrate P. do. The 2nd projection light beam EL2b projected to projection area | region PA forms the projection image used as an upright image of the mask pattern in illumination area | region IR. At this time, the image of the mask pattern in illumination area | region IR is projected by equal magnification (x1) to projection area | region PA.

Here, the field of view of the projection optical module PLM constituted by the first lens group 71 including the refractive lens 71a and the first concave mirror 72 will be briefly described with reference to FIG. 5. do. FIG. 5 shows a state in which a circular all-imaging field of view (reference plane) CIF by the projection optical module PLM is developed on the YZ plane in FIG. 5, and has a rectangular shape on the mask M. FIG. The intermediate image Img1 formed on the projection field stop 63 of the illumination region IR, the intermediate image plane P7, and the intermediate image formed in a trapezoidal shape by the projection field aperture 63 of the intermediate image plane P7. Each of Img2 and the trapezoidal projection area PA on the substrate P is set long and thin in the Y-axis direction, and is arranged separately in the Z-axis direction.

First, the center of the rectangular illumination area IR on the mask M is eccentric in the + Z direction from the center point (the optical axis BX2 passes) of the pre-imaging field of view CIF. It is set at one position (first position). Therefore, the intermediate image Img1 formed on the projection field stop 63 (intermediate image plane P7) by the first imaging optical path (first projection light beam EL2a) passing through the projection optical module PLM. In the YZ plane, the position of the height value k1 which is eccentric in the -Z direction from the center point of the pre-imaging visual field CIF in the state in which the illumination region IR is inverted in the vertical direction (Z direction) and left and right (Y direction). It forms in (2nd position).

The intermediate image Img2 restricts the intermediate image Img1 at the trapezoidal opening of the projection field stop 63. And since the optical path is bent by the two deflection members 77 and 78 arranged before and after the projection field stop 63 of the intermediate image Img2, when viewed in the YZ plane, it is + Z from the center point of the whole imaging field view CIF. It forms in the position (third position) of the height value k2 (k2 <k1) of a direction. In addition, the intermediate image Img2 limited in the projection field stop 63 is formed on the substrate P by the second imaging optical path (second projection light beam EL2b) passing through the projection optical module PLM. The image is reimaged in the projection area PA.

The center point of the image reimaged in the projection area | region PA is located in the image height value k2 (k2 <k1) of -Z direction from the center point of the pre-imaging visual field CIF when it sees in YZ plane. And the image reimaged in projection area | region PA is formed in equal magnification (x1), without inverting the left-right direction (Y direction) with respect to the mask pattern in illumination area | region IR.

As described above, in the present embodiment, the illumination region IR is limited to an elongated rectangular or trapezoidal region so that the imaging light beam from the mask pattern can be spatially separated within the circular imaging visual field CIF. By the four deflection members 76, 77, 78, and 79 by ordinary total reflection mirrors, a double pass imaging optical path was formed in the projection optical module PLM. Therefore, on the board | substrate P, the pattern on the mask M can be projected on the board | substrate P as an upright image of equal magnification with respect to the Y-axis direction (joint direction of each projection image by projection optical modules PL1-PL6) at least. have.

In this manner, the first deflection member 76, the second deflection member 77, the third deflection member 78, and the fourth deflection member 79 each have a field of view on the incident side of the first projection light beam EL2a. 1 incidence field of view, the field of view on the emission side of the first projection light beam EL2a (the first field of view), the field of view on the incident side of the second projection light beam EL2b (the second field of view), and the second projection light beam The field of view on the emission side (second emission field of view) EL2b is separated by the reflection optical system 62. For this reason, since the reflection optical system 62 becomes the structure which a leakage light does not produce easily at the time of light guide of the 1st projection light beam EL2a, the reflection optical system 62 measures the amount of light of the leakage light projected on the board | substrate P. It functions as a light quantity reducing unit to reduce. Moreover, the leaked light was, for example, scattered light generated by scattering of the first projection light beam EL2a, or was split light generated by separation of the first projection light beam EL2a, or the first projection light beam EL2a. It may have been reflected light caused by the reflection of a part of the.

Here, the reflective optical system 62 is arranged in the order of the first deflection member 76, the third deflection member 78, the fourth deflection member 79, and the second deflection member 77 from the upper side in the Z direction. It is prepared. For this reason, the 1st projection light beam EL2a which injects into the refractive lens 71a of the 1st lens group 71 enters into the side near the illumination area | region IR (upper side of the refractive lens 71a). Moreover, the 2nd projection light beam EL2b radiate | emitted from the refractive lens 71a of the 1st lens group 71 is radiate | emitted from the side near the projection area | region PA (lower side of the refractive lens 71a). Therefore, the distance between the illumination region IR and the first deflection member 76 can be shortened, and the distance between the projection area PA and the fourth deflection member 79 can be shortened. Therefore, the projection optical system PL can be made compact. In addition, as shown in FIG. 4, the third deflecting member 78 is formed of the first deflecting member 76 and the fourth deflecting member 79 with respect to the direction (Z direction) along the all-phase visual field CIF. Is placed in between. In addition, the position of the 1st deflection member 76 and the 4th deflection member 79, and the position of the 2nd deflection member 77 and the 3rd deflection member 78 are regarding the direction of the 2nd optical axis BX2. , Different location.

In addition, the reflection optical system 62 corresponds to four visual fields (IR, Img1, Img2, and PA shown in FIG. 5) of the first incident view, the first exit view, the second incident view, and the second exit view. In order to avoid overlapping projection light beam EL2 in four visual fields, it is preferable to make the size of projection area PA into a predetermined magnitude | size. That is, in the projection area PA, the length in the scanning direction of the board | substrate P and the width direction of the board | substrate P orthogonal to a scanning direction are the length of the length / width direction of a scanning direction ≤ 1/4 It is. For this reason, the reflective optical system 62 can separate | separate the projection light beam EL2 and guide it to the partial optical system 61 in four visual fields, without overlapping projection light beam EL2.

In addition, the first deflection member 76, the second deflection member 77, the third deflection member 78, and the fourth deflection member 79 include a slit-shaped first incident view, a first exit view, and a first view. Of the slit along the pre-imaging field of view (CIF) while being formed in a rectangle corresponding to any of the two field of view and the four fields of view of the second emission field (corresponding to IR, Img1, Img2, and PA shown in FIG. 5). They are arranged separately from each other in the width direction (Z direction).

The focus correction optical member 64 is disposed between the fourth deflection member 79 and the substrate P. As shown in FIG. The focus correction optical member 64 adjusts the focus state of the image of the mask pattern projected on the substrate P. FIG. For example, the focus correction optical members 64 overlap two wedge-shaped prisms in the reverse direction (the opposite direction to the X direction in FIG. 4) so as to form a transparent parallel flat plate as a whole. By sliding this pair of prism in the slope direction without changing the space | interval between the mutually opposing surfaces, the thickness as a parallel flat plate is made variable. Thereby, the effective optical path length of the partial optical system 61 is finely adjusted, and the focus state of the image of the mask pattern formed in the intermediate image surface P7 and the projection area | region PA is finely adjusted.

The image shift optical member 65 is disposed between the polarizing beam splitter PBS and the first deflection member 76. The image shift optical member 65 adjusts the image of the mask pattern projected on the board | substrate P so that a movement is possible in an image surface. The optical member 65 for image shift is comprised from the transparent parallel plate glass which can incline in the XZ plane of FIG. 4, and the transparent parallel plate glass which can incline in the YZ plane of FIG. By adjusting each inclination amount of the two parallel plate glass, the image of the mask pattern formed in the intermediate image surface P7 and the projection area | region PA can be micro-shifted to an X direction or a Y direction.

The magnification correction optical member 66 is disposed between the fourth deflection member 79 and the substrate P. FIG. For example, the magnification correction optical member 66 arranges three of the concave lens, the convex lens, and the concave lens coaxially at predetermined intervals, and fixes the front and rear concave lenses to fix the convex lens between the optical axes (primary rays). It is configured to move in the direction. Thereby, the image of the mask pattern formed in projection area | region PA is enlarged or reduced isotropically by the minute amount, maintaining a telecentric image formation state. Moreover, the optical axis of the three lens groups which comprise the magnification correction optical member 66 is inclined in XZ plane so that it may become parallel with the principal light ray of projection light beam EL2 (2nd projection light beam EL2b).

The rotation correction mechanism 67 rotates the second deflection member 77 about an axis parallel to (or perpendicular to) the second optical axis BX2 by, for example, an actuator (not shown). This rotation correction mechanism 67 can rotate the image of the mask pattern formed in the intermediate | middle upper surface P7 finely in the surface P7 by rotating the 2nd deflecting member 77. FIG. have.

The polarization adjustment mechanism 68 rotates the quarter wave plate 41 around an axis orthogonal to the plate surface, for example, by an actuator (not shown) to adjust the polarization direction. The polarization adjustment mechanism 68 can adjust the illuminance of the projection light beam EL2 (second projection light beam EL2b) projected on the projection area PA by rotating the quarter wave plate 41. .

In the projection optical system PL configured as described above, the first projection light beam EL2a from the mask M is centered on the normal direction (first axis AX1) of the mask surface P1 from the illumination region IR. Radial direction), and passes through the quarter wave plate 41, the polarizing beam splitter PBS, and the image shift optical member 65 to enter the reflective optical system 62. The first projection light beam EL2a incident on the reflection optical system 62 is reflected by the first reflection surface P3 of the first deflection member 76 of the reflection optical system 62 and enters the partial optical system 61. . The first projection light beam EL2a incident on the partial optical system 61 passes through the first lens group 71 of the partial optical system 61 and is reflected by the first concave mirror 72. The first projection light beam EL2a reflected by the first concave mirror 72 passes through the first lens group 71 again and exits from the partial optical system 61. The 1st projection light beam EL2a radiate | emitted from the partial optical system 61 is reflected by the 2nd reflecting surface P4 of the 2nd deflection member 77 of the reflecting optical system 62, and it enters into the projection field stop 63. do. The 2nd projection light beam EL2b which passed the projection field stop 63 is reflected by the 3rd reflection surface P5 of the 3rd deflection member 78 of the reflection optical system 62, and is returned to the partial optical system 61 again. Enter. The second projection light beam EL2b incident on the partial optical system 61 passes through the first lens group 71 of the partial optical system 61 and is reflected by the first concave mirror 72. The second projection light beam EL2b reflected by the first concave mirror 72 passes through the first lens group 71 again and exits from the partial optical system 61. The 2nd projection light beam EL2b radiate | emitted from the partial optical system 61 is reflected by the 4th reflective surface P6 of the 4th deflection member 79 of the reflective optical system 62, and the focus correction optical member 64 and It enters into the magnification correction optical member 66. The second projection light beam EL2b emitted from the magnification correction optical member 66 enters the projection area PA on the substrate P, and the image of the mask pattern appearing in the illumination area IR is the projection area. It is projected to PA at equal magnification (× 1).

<Device manufacturing method>

Next, with reference to FIG. 6, the device manufacturing method is demonstrated. 6 is a flowchart showing a device manufacturing method of the first embodiment.

In the device manufacturing method shown in FIG. 6, first, the function and the performance design of the display panel by self-luminescent elements, such as organic electroluminescent element, are performed first, and the necessary circuit pattern and wiring pattern are designed by CAD etc. (step S201). Next, based on the pattern for every layer designed by CAD etc., the mask M of the required layer is produced (step S202). Moreover, the supply roll FR1 by which the flexible board | substrate P (resin film, a metal thin film, plastics, etc.) which become a base material of a display panel were wound up is prepared (step S203). In addition, the roll-shaped board | substrate P prepared in this step S203 modified the surface as needed, and a base layer (for example, micro unevenness | corrugation by an imprint system). May be formed in advance, or may be a laminate of a photosensitive functional film or a transparent film (insulating material) in advance.

Next, an organic EL or the like is formed on the substrate P so as to form a backplane layer composed of electrodes, wirings, insulating films, TFTs (thin film semiconductors), and the like that constitute the display panel device. The light emitting layer (display pixel portion) by the self-light emitting element of is formed (step S204). This step S204 also includes a conventional photolithography step of exposing the photoresist layer using the exposure apparatus U3 described in the above embodiments, but the substrate P coated with the photosensitive silane coupling material instead of the photoresist (P) ) Is subjected to pattern exposure to form a hydrophilic pattern on the surface, and the photosensitive catalyst layer is subjected to pattern exposure, and the pattern of the metal film (wiring, electrode, etc.) is subjected to electroless plating. The process by the wet process to form, or the printing process etc. which draw a pattern by the conductive ink containing silver nanoparticles, etc. are also included.

Next, for each display panel device continuously manufactured on a long substrate P in a roll method, the substrate P is diced or a protective film (environmental barrier layer) is applied to the surface of each display panel device. ), A color filter sheet, or the like are bonded to each other to assemble the device (step S205). Next, an inspection process is performed to see whether the display panel device functions normally or satisfies the desired performance and characteristics (step S206). As described above, a display panel (flexible display) can be manufactured.

As mentioned above, 1st Embodiment is a 1st incident view, a 1st exit view, a 2nd incident view, and a 2nd exit by the reflection optical system 62 which cooperates with the projection optical system PL (projection optical module PLM). Since the visual fields can be separated from each other, generation of leaked light from the first projection light beam EL2a can be suppressed. For this reason, since the reflection optical system 62 can be set as the structure which is hard to project leakage light on the board | substrate P, the deterioration of the quality of the image projected and exposed on the board | substrate P is prevented. can do.

Moreover, since 1st Embodiment can make projection area PA into length = 1/4 of the length / width direction of a scanning direction, the 1st projection light beam EL2a and the 1st in the reflection optical system 62 are made. The field of view of the two projection light beams EL2b, that is, the first incident field of view, the first emission field of view, the second incident field of view, and the second field of view can be separated without overlapping.

Moreover, since 1st Embodiment can make illumination light beam EL1 into a laser beam, the illumination intensity of 2nd projection light beam EL2b projected to projection area | region PA can be ensured suitably.

Moreover, in 1st Embodiment, the 1st projection light beam EL2a and 2nd projection light beam EL2b which make incident on the refractive lens 71a are made into the upper side of the refractive lens 71a, and it exits from the refractive lens 71a. The 1st projection light beam EL2a and 2nd projection light beam EL2b which were made were made into the lower side of the refractive lens 71a. However, the first projection light beam EL2a and the second projection light beam EL2b for the refractive lens 71a can be separated if the first incident view, the first exit view, the second incident view, and the second exit view are mutually separated. The incident position and the exit position of) are not particularly limited.

Second Embodiment

Next, the exposure apparatus U3 of 2nd Embodiment is demonstrated with reference to FIG. In addition, in 2nd Embodiment, only the part different from 1st Embodiment is demonstrated so that the description which overlaps with 1st Embodiment is described, and about the component same as 1st Embodiment, the code | symbol same as 1st Embodiment is described. Will be explained. FIG. 7: is a figure which shows the structure of the illumination optical system and projection optical system of the exposure apparatus of 2nd Embodiment. The exposure apparatus U3 of 1st Embodiment made it difficult to produce leakage light by performing visual field separation in the reflection optical system 62 of the projection optical system PL. The exposure apparatus U3 of 2nd Embodiment WHEREIN: In the reflection optical system 100 of the projection optical system PL, the imaging position of the projection image formed by the projection light beam EL2, and the imaging of the defective image formed by the leaked light. The position is made different in the scanning direction of the substrate P.

In the exposure apparatus U3 of 2nd Embodiment, the projection optical system PL is a quarter wave plate 41 and a polarizing beam splitter in order from the incident side of the projection light beam EL2 from the mask M. In FIG. (PBS) and projection optical module PLM, the projection optical module PLM includes a partial optical system 61, a reflection optical system (light guide optical system) 100, and a projection field stop 63. The projection optical module PLM is similar to the first embodiment in that the focus correction optical member 64, the image shift optical member 65, the magnification correction optical member 66, the rotation correction mechanism 67, and the polarization Adjustment mechanism 68; In addition, a quarter wave plate 41, a polarizing beam splitter (PBS), a partial optical system 61, a projection field stop 63, a focus correction optical member 64, an image shift optical member 65, magnification correction Since the optical member 66, the rotation correction mechanism 67, and the polarization adjustment mechanism 68 are the same structure, description is abbreviate | omitted.

The reflective optical system 100 includes a first polarizing beam splitter (first reflecting member) PBS1, a second polarizing beam splitter (second reflecting member) PBS2, a half wave plate 104, The first deflection member (the first optical member and the third reflecting portion) 105, the second deflection member (the second optical member and the fourth reflecting portion) 106, the first light blocking plate 111, and the second light blocking plate 112 is provided. The 1st polarization beam splitter PBS1 has the 1st polarization splitting surface P10. The first polarization splitting surface P10 reflects the first projection light beam EL2a from the polarization beam splitter PBS1, and reflects the first projection light beam EL2a that is reflected to the refractive lens of the first lens group 71. Incident on 71a). Moreover, the 1st polarization splitting surface P10 transmits the 2nd projection light beam EL2b from the intermediate image surface P7, and the 2nd projection light beam EL2b which permeate | transmitted is refracted by the 1st lens group 71 It enters into the lens 71a. 2nd polarizing beam splitter PBS2 has the 2nd polarization splitting surface P11. The second polarization splitting surface P11 transmits the first projection light beam EL2a from the refractive lens 71a of the first lens group 71, and transmits the first projection light beam EL2a that is transmitted through the first deflection member. It enters into 105. Moreover, the 2nd polarization splitting surface P11 reflects the 2nd projection light beam EL2b from the refractive lens 71a of the 1st lens group 71, and reflects the 2nd projection light beam EL2b which reflected the board | substrate ( Incident on P). The half wave plate 104 converts the first projection light beam EL2a of the S-polarized light reflected by the first polarization beam splitter PBS1 into the first projection light beam EL2a of the P-polarized light. Moreover, the 1/2 wave plate 104 converts the second projection light beam EL2b of P-polarized light transmitted through the first polarization beam splitter PBS1 into the second projection light beam EL2b of S-polarized light. The first deflection member 105 is a reflection mirror having a first reflection surface P12. The 1st reflecting surface P12 reflects the 1st projection light beam EL2a which permeate | transmitted through the 2nd polarizing beam splitter PBS2, and projected visual field provided the reflected 1st projection light beam EL2a in the intermediate image surface P7. It enters into the stop 63. The second deflection member 106 is a reflection mirror having a second reflection surface P13. The second reflecting surface P13 reflects the second projection light beam EL2b from the projection field stop 63 and causes the reflected second projection light beam EL2b to enter the first polarizing beam splitter PBS1. Thus, the 1st deflection member 105 and the 2nd deflection member 106 are flap reflectors which reflect so that the 1st projection light beam EL2a from the partial optical system 61 may be bent back toward the partial optical system 61. It is functioning as.

Moreover, since the 1st polarization beam splitter PBS1 was provided in the reflection optical system 100, so that 1st polarization beam splitter PBS1 may reflect the projection light beam of P polarization | polarized-light which permeate | transmitted through the polarization beam splitter PBS, The half wave plate 107 is provided between the polarizing beam splitter PBS and the first polarizing beam splitter PBS1.

The first light shielding plate 111 is provided between the second polarizing beam splitter PBS2 and the substrate P. FIG. In the first light shielding plate 111, a part of the first projection light beam EL2a incident on the second polarization beam splitter PBS2 does not pass through the second polarization splitting surface P11 of the second polarization beam splitter PBS2. Reflected light (leakage light) reflected without reflection is provided at a position where light can be blocked.

The second light shielding plate 112 is provided between the first polarization beam splitter PBS1 and the second polarization beam splitter PBS2. The second light shielding plate 112 shields leakage light leaking from the first polarizing beam splitter PBS1 to the second polarizing beam splitter PBS2.

The 1st projection light beam EL2a of P polarization | polarized-light from polarizing beam splitter PBS passes through the optical member 65 for image shift, and permeate | transmits the 1/2 wave plate 107. FIG. The 1st projection light beam EL2a which permeate | transmitted the 1/2 wave plate 107 enters into 1st polarizing beam splitter PBS1 after converting into S-polarized light. The first projection light beam EL2a of the S-polarized light incident on the first polarization beam splitter PBS1 is reflected by the first polarization splitting surface P10 of the first polarization beam splitter PBS1. The 1st projection light beam EL2a of S polarization | polarized-light reflected by the 1st polarization splitting surface P10 permeate | transmits the 1/2 wave plate 104. As shown in FIG. The 1st projection light beam EL2a which permeate | transmitted the 1/2 wave plate 104 enters into the 1st lens group 71 after converting into P-polarized light. The first projection light beam EL2a incident on the first lens group 71 passes through the plurality of lens members including the refractive lens 71a and then enters the first concave mirror 72. At this time, the first projection light beam EL2a passes through the field of view (first incident field of view) on the upper side of the refractive lens 71a in the first lens group 71. The first projection light beam EL2a incident on the first concave mirror 72 is reflected by the first concave mirror 72. The first projection light beam EL2a reflected by the first concave mirror 72 enters the first lens group 71, passes through the plurality of lens members including the refractive lens 71a, and then the first It exits from the lens group 71. At this time, the first projection light beam EL2a passes through the field of view (first output field of view) on the lower side of the refractive lens 71a in the first lens group 71. The 1st projection light beam EL2a radiate | emitted from the 1st lens group 71 enters into the 2nd polarizing beam splitter PBS2. The first projection light beam EL2a of P polarized light incident on the second polarization beam splitter PBS2 passes through the second polarization splitting surface P11. The first projection light beam EL2a that has passed through the second polarization splitting surface P11 is incident on the first deflection member 105 and is reflected by the first reflection surface P12 of the first deflection member 105. The first projection light beam EL2a reflected by the first reflection surface P12 enters the projection field stop 63. The first projection light beam EL2a incident on the projection field stop 63 forms an intermediate image that becomes an inverted image of the mask pattern in the illumination region IR.

The second projection light beam EL2b from the projection field stop 63 is reflected by the second reflection surface P13 of the second deflection member 106. The second projection light beam EL2b reflected by the second reflecting surface P13 enters the first polarizing beam splitter PBS1. The 2nd projection light beam EL2b of P polarization | polarized-light which entered the 1st polarizing beam splitter PBS1 permeate | transmits the 1st polarization splitting surface P10. The 2nd projection light beam EL2b of P-polarized light which permeate | transmitted the 1st polarization splitting surface P10 permeate | transmits the 1/2 wave plate 104. As shown in FIG. The second projection light beam EL2b transmitted through the half wave plate 104 is incident on the first lens group 71 after being converted into S-polarized light. The second projection light beam EL2b incident on the first lens group 71 passes through the plurality of lens members including the refractive lens 71a and then enters the first concave mirror 72. At this time, the second projection light beam EL2b passes through the viewing area (second incidence field) on the upper side of the refractive lens 71a in the first lens group 71. The second projection light beam EL2b incident on the first concave mirror 72 is reflected by the first concave mirror 72. The second projection light beam EL2b reflected by the first concave mirror 72 enters the first lens group 71 and passes through the plurality of lens members including the refractive lens 71a, and then the first It exits from the lens group 71. At this time, the 2nd projection light beam EL2b passes through the visual field area (2nd output visual field) of the lower side of the refractive lens 71a in the 1st lens group 71. FIG. The second projection light beam EL2b emitted from the first lens group 71 enters the second polarization beam splitter PBS2. The second projection light beam EL2b of the S-polarized light incident on the second polarization beam splitter PBS2 is reflected by the second polarization splitting surface P11. The second projection light beam EL2b reflected by the second polarization splitting surface P11 passes through the focus correction optical member 64 and the magnification correction optical member 66 to the projection area PA on the substrate P. Projected. The 2nd projection light beam EL2b projected to projection area | region PA forms the projection image used as an upright image of the mask pattern in illumination area | region IR. At this time, the image of the mask pattern in illumination area | region IR is projected by equal magnification (x1) to projection area | region PA.

Here, the first polarization beam splitter PBS1, the second polarization beam splitter PBS2, the first deflection member 105, and the second deflection member 106 are reflected by the second polarization beam splitter PBS2. The imaging position formed by the projection light beam EL2b and the defective image formation position formed by the leaked light which is part of the first projection light beam EL2a reflected by the second polarization beam splitter PBS2 are the substrates ( The arrangement is made different in the scanning direction of P). Specifically, the incidence position of the first projection light beam EL2a and the incidence position of the second projection light beam EL2b are different with respect to the first polarization separation surface P10 of the first polarization beam splitter PBS1. The first polarization beam splitter PBS1, the second polarization beam splitter PBS2, the first deflection member 105 and the second deflection member 106 are disposed. By such arrangement, the incidence position of the second projection light beam EL2b and the incidence position of the first projection light beam EL2a are different with respect to the second polarization separation surface P11 of the second polarization beam splitter PBS2. Can be. Therefore, it becomes a part of the imaging image position of the 2nd projection light beam EL2b reflected by the 2nd polarization split surface P11, and becomes a part of the 1st projection light beam EL2a reflected by the 2nd polarization split surface P11. The imaging position of the defective image of the leaked light can be made different in the scanning direction of the substrate P. FIG.

In this case, the 1st light shielding plate 111 is provided in the position which light-shields the leakage light which goes to the board | substrate P from 2nd polarizing beam splitter PBS2. For this reason, the 1st light-shielding plate 111 is a 2nd polarizing beam splitter, allowing projection of the 2nd projection light beam EL2b to board | substrate P from 2nd polarizing beam splitter PBS2 to board | substrate P. The light leakage from the PBS2 toward the substrate P is shielded.

In this manner, the first polarization beam splitter PBS1, the second polarization beam splitter PBS2, the first deflection member 105, the second deflection member 106, and the first light blocking plate 111 are formed of the substrate P. As shown in FIG. In the scanning direction, the imaging position and the defective image forming position are different from each other, and the first light blocking plate 111 shields the leaked light. Therefore, the reflective optical system 100 functions as a light amount reducing unit for reducing the light amount of leaked light projected onto the substrate P. FIG.

Moreover, the incident position of the 1st projection light beam EL2a in the 1st polarization splitting surface P10 of the 1st polarizing beam splitter PBS1, and the 2nd polarization splitting surface P11 of the 2nd polarizing beam splitter PBS2. The incident position of the first projection light beam EL2a at is a symmetrical position with the second optical axis BX2 interposed therebetween. Moreover, the incident position of the 2nd projection light beam EL2b in the 1st polarization splitting surface P10 of the 1st polarizing beam splitter PBS1, and the 2nd polarization splitting surface P11 of the 2nd polarizing beam splitter PBS2. The incident position of the second projection light beam EL2b at is a symmetrical position with the second optical axis BX2 interposed therebetween. In other words, the incident position of the 1st projection light beam EL2a in the 1st polarization splitting surface P10 of 1st polarization beam splitter PBS1, and the 2nd polarization splitting surface P11 of 2nd polarization beam splitter PBS2. The incident position of the 2nd projection light beam EL2b in () becomes an asymmetrical position across the 2nd optical axis BX2.

The incident position of the 1st projection light beam EL2a in the 1st polarization splitting surface P10, and the incident position of the 2nd projection light beam EL2b in the 2nd polarization splitting surface P11 are 2nd optical axis BX2. When it becomes an asymmetrical position across the gap, the projection area PA is a position shifted in the X direction (second optical axis direction) with respect to the illumination area IR. In this case, the circumferential length from the center point of the illumination area IR1 (and IR3, IR5) on the mask M to the center point of the illumination area IR2 (and IR4, IR6) and the projection area PA1 on the substrate P (And PA3, PA5) and the first projection optical system PL1 (and PL3, PL5) and the circumferential length from the center point of the second projection area PA2 (and PA4, PA6) to the same length. The second projection optical system PL2 (and PL4, PL6) has some other structure.

The first projection optical system PL1 (and PL3, PL5) in the odd-numbered (left side of FIG. 7) is the first projection light beam EL2a on the first polarization splitting surface P10 of the first polarization beam splitter PBS1. The first polarization beam splitter PBS1 and the second polarization beam splitter so that the incidence position of the laser beam is located on the upper side in the Z direction and on the center side in the X direction as compared with the incidence position of the second projection light beam EL2b. (PBS2), the first deflection member 105 and the second deflection member 106 are disposed. For this reason, in the 2nd polarization splitting surface P11 of 2nd polarization beam splitter PBS2, the incidence position of 2nd projection light beam EL2b is in the Z direction compared with the incidence position of 1st projection light beam EL2a. It is an upper side and is located in the outer side of an X direction.

That is, the first projection optical system PL1 is a reflection portion of the first polarization beam splitter PBS1, a reflection portion of the second deflection member 106, a reflection portion of the second polarization beam splitter PBS2 in the Z direction, The reflection part of the 1st deflection | deviation member 105 is in order. For this reason, as shown in FIG. 7, the 2nd deflection | deviation member 106 is a reflection part and 2nd polarization of the 1st polarizing beam splitter PBS1 regarding the direction (Z direction) along the pre-imaging visual field CIF. It is arrange | positioned between the reflecting part of the beam splitter PBS2. Moreover, in the 1st projection optical system PL1, the position of the reflection part of 1st polarizing beam splitter PBS1 and 2nd polarizing beam splitter PBS2, the 1st deflection member 105, and the 2nd deflection member 106 are shown. The position of becomes another position with respect to the direction of the second optical axis BX2.

The second projection optical system PL2 (and PL4, PL6) of even-numbered (right side of FIG. 7) is the first projection light beam EL2a at the first polarization splitting surface P10 of the first polarization beam splitter PBS1. The first polarization beam splitter PBS1 and the second polarization beam splitter PBS2), the 1st deflection member 105, and the 2nd deflection member 106 are arrange | positioned. For this reason, in the 2nd polarization splitting surface P11 of 2nd polarization beam splitter PBS2, the incidence position of 2nd projection light beam EL2b is in the Z direction compared with the incidence position of 1st projection light beam EL2a. It is a lower side and is located in the center side of a X direction.

That is, in the Z direction, the second projection optical system PL2 is a reflection portion of the second deflection member 106, a reflection portion of the first polarization beam splitter PBS1, a reflection portion of the first deflection member 105, and a second reflection optical system PL2. It is in order of the reflecting part of 2 polarization beam splitter PBS2. For this reason, as shown in FIG. 7, the 1st deflection | deviation member 105 is a reflection part and 2nd polarization of the 1st polarizing beam splitter PBS1 regarding the direction (Z direction) along the pre-imaging visual field CIF. It is arrange | positioned between the reflecting part of the beam splitter PBS2. Moreover, in 2nd projection optical system PL2, similarly to 1st projection optical system PL1, the position of the reflection part of 1st polarization beam splitter PBS1 and 2nd polarization beam splitter PBS2, and 1st deflection member ( The position of the 105 and the 2nd deflection | deviation member 106 become another position with respect to the direction of the 2nd optical axis BX2.

In addition, the reflection portion of the first polarization beam splitter PBS1, the reflection portion of the second polarization beam splitter PBS2, the first deflection member 105, and the second deflection member 106 are slit-shaped first incidences. It is formed in a rectangular shape corresponding to any of the four fields of view (first IR, Img1, Img2, PA shown in Fig. 5) of the field of view, the first emission field, the second incident field, and the second field of view. The slits along the field of view CIF are arranged separately from each other in the width direction (Z direction). In addition, in FIG. 5, in the case of the odd 1st projection optical system PL1 (and PL3, PL5), illumination area | region IR, intermediate image Img2, and projection area | region PA are sequentially in order from the upper part of Z direction. , Intermediate phase (Img1). On the other hand, in the case of the even-numbered second projection optical system PL2 (and PL4, PL6), the intermediate image Img2, the illumination region IR, the intermediate image Img1, and the projection region (in order from the top in the Z direction). PA).

As described above, the first projection optical system PL1 (and PL3 and PL5) and the second projection optical system PL2 (and PL4 and PL6) have different configurations, thereby making the illumination region IR1 (and IR3) on the mask M different. , IR5) from the center point of the illumination area IR2 (and IR4, IR6) to the circumferential length ΔDm, and from the center point of the projection area PA1 (and PA3, PA5) on the substrate P to the second projection area. Peripheral length (DELTA) Ds to the center point of (PA2 (and PA4, PA6)) can be made into the same length. At this time, since the projection area PA becomes a position shifted in the X direction (the second optical axis BX2 direction) with respect to the illumination area IR, the projection area PA is in contact with the first axis AX1 of the mask holding drum 21. The second axis AX2 of the substrate support drum 25 is shifted in the direction of the second optical axis BX2 in accordance with the shift amount in the circumferential direction of the projection area PA with respect to the illumination area IR.

As described above, in the second embodiment, in the reflection optical system 100, the defective image formed by the imaging position formed by the second projection light beam EL2b and the leaked light from the first projection light beam EL2a. Leakage light can be shielded by the 1st light shielding plate 111 by making an imaging position into the scanning direction of the board | substrate P different. For this reason, since the reflective optical system 100 can shield the leakage light projected on the board | substrate P, it can project a projection image on the board | substrate P preferably.

Moreover, in 2nd Embodiment, the reflection optical system 100 WHEREIN: The visual field of the 1st projection light beam EL2a and the 2nd projection light beam EL2b, ie, a 1st incident view, a 1st exit view, a 2nd incident view, and You may divide | segment a 2nd emission field of view, and a part may overlap. That is, since the second embodiment does not need to separate the visual fields of the first projection light beam EL2a and the second projection light beam EL2b as in the first embodiment, the various optical members of the reflective optical system 100 Freedom with regard to placement can be increased.

Moreover, in 2nd Embodiment, although the 1/2 wavelength plate 104 was provided between 1st polarizing beam splitter PBS1 and the refractive lens 71a, it is not limited to this structure. For example, a first quarter wave plate is provided between the first polarizing beam splitter PBS1 and the refractive lens 71a, and between the second polarizing beam splitter PBS2 and the refractive lens 71a. A second quarter wave plate may be provided in the In this case, the first quarter wave plate and the second quarter wave plate may be integrated.

[Third Embodiment]

Next, with reference to FIG. 8, the exposure apparatus U3 of 3rd Embodiment is demonstrated. Moreover, also in 3rd Embodiment, only the part different from 2nd Embodiment is demonstrated so that the description which overlaps with 2nd Embodiment is described, and about the component same as 2nd Embodiment, the code | symbol same as 2nd Embodiment is the same. Will be explained. 8 is a diagram illustrating a configuration of a projection optical system of the exposure apparatus of the third embodiment. The exposure apparatus U3 of 2nd Embodiment is the defect formed by the imaging position formed by the 2nd projection light beam EL2b, and the leaked light in the reflection optical system 100 of the projection optical system PL. The imaging position of the image was changed in the scanning direction of the substrate P. In the exposure apparatus U3 of 3rd Embodiment, in the reflection optical system 130 of the projection optical system PL, the imaging position of the projection image formed by the projection light beam EL2, and the imaging of the defective image formed by the leaked light. The position is made different in the depth direction (focus direction). In addition, in FIG. 8, only the partial optical system 131 and the reflective optical system 130 are shown in order to simplify description in 3rd Embodiment. In addition, in FIG. 8, the mask surface P1 and the board | substrate P are arrange | positioned parallel to an XY plane, the main light ray of the 1st projection light beam EL2a from the mask surface P1 is made perpendicular to an XY plane, and a board | substrate The principal ray of the 2nd projection light beam EL2b to (P) is made perpendicular to the XY plane.

In the projection optical system PL of the third embodiment, the partial optical system 131 includes a refractive lens 71a and a first concave mirror 72. In addition, since the refractive lens 71a and the 1st concave mirror 72 have the same structure as 1st Embodiment and 2nd Embodiment, description is abbreviate | omitted. In the partial optical system 131, similarly to the second embodiment, a plurality of lens members may be disposed between the refractive lens 71a and the first concave mirror 72.

The reflective optical system 130 includes a first polarizing beam splitter (first reflecting member) PBS1, a second polarizing beam splitter (second reflecting member) PBS2, a half wave plate 104, A first deflection member (first optical member and third reflecting portion) 105 and a second deflection member (second optical member and fourth reflecting portion) 106 are provided. Moreover, 1st polarizing beam splitter PBS1, 2nd polarizing beam splitter PBS2, 1/2 wave plate 104, the 1st deflection member 105, and the 2nd deflection member 106 are 2nd Embodiment. Although some angles, etc. are different, description is abbreviate | omitted since it is substantially the same structure.

8, the first projection light beam EL2a incident on the first polarization beam splitter PBS1 from the mask surface P1 is used, and the first polarization separation surface P10 of the first polarization beam splitter PBS1 is shown. The 1st projection light beam EL3 of the imaginary image centered on the plane is shown at the center. At this time, the surface which image-formed the 1st projection light beam EL3 of the virtual image becomes the virtual mask surface P15. 8, the 1st projection light beam EL2a which injects into the 1st deflection member 105 from 2nd polarizing beam splitter PBS2 is used, and the 1st reflection surface P12 of the 1st deflection member 105 is shown. The 1st projection light beam EL4 of the imaginary image made to surface symmetry at the center is shown. At this time, the surface which image-formed the 1st projection light beam EL4 of the virtual image becomes the virtual intermediate image surface P16.

The first polarization beam splitter PBS1, the second polarization beam splitter PBS2, the first deflection member 105, and the second deflection member 106 are second projection light beams reflected by the second polarization beam splitter PBS2. The imaging position formed by EL2b and the defective image formed by the leaked light which is part of the first projection light beam EL2a reflected by the second polarization beam splitter PBS2 are in the depth of focus direction. (I.e., the direction along the chief ray of the imaging light beam). Specifically, the image forming position of the projection image on the virtual mask surface P15 of the first projection light beam EL3 of the virtual image is deepened in the depth direction, and the virtual intermediate image surface of the first projection light beam EL4 of the virtual image ( The first polarization beam splitter PBS1, the second polarization beam splitter PBS2, the first deflection member 105, and the second deflection member 106 are disposed so as to make the imaging position of the defective image in P16 shallower in the depth direction. Doing.

By such arrangement, a good projection image is formed on the substrate P by the second projection light beam EL2b reflected by the second polarization splitting surface P11 of the second polarization beam splitter PBS2. Moreover, the leaked light which is a part of the 1st projection light beam EL2a reflected by the 2nd polarization splitting surface P11 of 2nd polarization beam splitter PBS2, forms the defective image of a mask pattern in front of the board | substrate P directly. do. That is, the image forming position of the projection image formed by the second projection light beam EL2b becomes the projection area PA on the substrate P, and the image forming position of the defective image formed by the leaked light is the second polarization beam splitter PBS2. ) And the substrate P. Therefore, since the imaging position of the defective image is between the second polarization beam splitter PBS2 and the substrate P, the defective image generated by the leaked light projected onto the substrate P is in a very faint state.

Thus, the 1st polarizing beam splitter PBS1, the 2nd polarizing beam splitter PBS2, the 1st deflection member 105, and the 2nd deflection member 106 are in the depth direction direction, and the imaging position of an image on an image is defective. In order to change the image forming position, the reflective optical system 130 functions as a light amount reducing unit for reducing the light amount of leaked light projected onto the substrate P. FIG.

Moreover, the imaging position of the projection image in the virtual mask surface P15 of the first projection light beam EL3 of the virtual image is deepened in the depth direction, and the virtual intermediate image surface P16 of the first projection light beam EL4 of the virtual image is deep. By shallowing the imaging position of the defective image in the depth direction, the optical path from the mask surface P1 to the first polarizing beam splitter PBS1 is lengthened, and the second polarizing beam splitter PBS2 from the middle upper surface P7 is extended. The light path is shortening. For this reason, the optical path bent from the second polarizing beam splitter PBS2 to the first polarizing beam splitter PBS1 via the middle upper surface P7 can be shortened.

As described above, in the third embodiment, in the reflection optical system 130, the defective image formed by the imaging position formed by the second projection light beam EL2b and the leaked light from the first projection light beam EL2a. The imaging position can be made different in the direction of the depth of focus (the direction along the chief ray of the imaging light beam). For this reason, since the reflection optical system 130 can make the leakage light projected on the board | substrate P very faint, the light quantity of the leaked light projected on the board | substrate P can be reduced, and the board | substrate P The influence on the projection image projected on the i) can be reduced.

In addition, since the third embodiment does not need to separate the field of view as in the first embodiment or change the incidence position with respect to the second polarization separation plane P11 as in the second embodiment, the reflective optical system 130 Can increase the degree of freedom in design.

[4th Embodiment]

Next, with reference to FIG. 9, the exposure apparatus U3 of 4th Embodiment is demonstrated. Moreover, also in 4th Embodiment, only the part different from 1st Embodiment is demonstrated so that the description which overlaps, and the same component as 1st Embodiment is attached | subjected and demonstrated with 1st Embodiment. . FIG. 9 is a diagram illustrating an overall configuration of an exposure apparatus (substrate processing apparatus) according to a fourth embodiment. Although the exposure apparatus U3 of 1st Embodiment was a structure which supports the board | substrate P with the board | substrate support drum 25 which has the support surface P2 used as a circumferential surface, the exposure apparatus of 4th embodiment ( U3 is configured to support the substrate P in a planar shape.

In the exposure apparatus U3 of 4th Embodiment, the board | substrate support mechanism 150 has a pair of drive roller 151 on which the board | substrate P was put. The pair of drive rollers 151 are rotated by the second drive part 26 to move the substrate P in the scanning direction.

Therefore, the board | substrate support mechanism 150 guides the board | substrate P conveyed from the drive roller R4 from one drive roller 151 to the other drive roller 151, and therefore a pair of drive rollers 151 ) Is placed over. The board | substrate support mechanism 150 rotates the pair of drive rollers 151 by the 2nd drive part 26, and drives the board | substrate P put over the pair of drive rollers 151 to drive roller R5. Guide to.

At this time, since the board | substrate P of FIG. 9 becomes a plane substantially parallel to XY plane, the main light ray of the 2nd projection light beam EL2b projected on the board | substrate P becomes perpendicular to XY plane. When the chief ray of the second projection light beam EL2b projected onto the substrate P is perpendicular to the XY plane, the second polarization beam splitter PBS2 of the projection optical system PL according to the chief ray of the second projection light beam EL2b. Angle at the second polarization splitting surface P11 is also appropriately changed.

Also in the fourth embodiment, similarly to FIG. 2, the illumination region IR2 (and IR4, IR6) is viewed from the center point of the illumination region IR1 (and IR3, IR5) on the mask M when viewed in the XZ plane. The circumferential length up to the center point of the center is the center point of the second projection area PA2 (and PA4 and PA6) from the center point of the projection area PA1 (and PA3 and PA5) on the substrate P along the support surface P2. It is set substantially the same as the circumferential length of up to.

Also in the exposure apparatus U3 of FIG. 9, the lower control apparatus 16 synchronously rotates the mask holding drum 21 and a pair of drive rollers 151 by a predetermined rotational speed ratio, The image of the mask pattern formed in the mask surface P1 is repeatedly projected and exposed on the surface of the board | substrate P laid over the pair of drive rollers 151 continuously.

As mentioned above, since 4th Embodiment can reduce the influence of the leakage light on the projection image formed on the board | substrate P even when the board | substrate P is supported by planar shape, The image can be preferably projected.

In addition, although the reflection type was used as the cylindrical mask M in each of the above embodiments, a transmissive cylindrical mask may be used. In that case, the light shielding film is formed on the outer circumferential surface of the transmission cylindrical body (quartz tube, etc.) having a constant thickness, and the plurality of illumination regions IR1 to IR6 shown on the left side of FIG. What is necessary is just to provide the illumination optical system and a light source part which project illumination light to each inside of the inside of a transmission cylinder. When such transmissive illumination is performed, the deflection beam splitter PBS, the quarter wave plate 41, etc. shown in FIG. 2, FIG. 4, and FIG. 7 can be abbreviate | omitted.

In addition, although the cylindrical mask M was used in each embodiment, a typical flat mask may be sufficient. In that case, the radius Rm of the cylindrical mask M described in FIG. 2 is regarded as infinity, so that the principal ray of the imaging light beam from the mask pattern is perpendicular to the mask surface, for example, the first deflection member (FIG. 2) ( What is necessary is just to set the angle of the reflecting surface P3 of 76).

In each of the above embodiments, a mask (hard mask) having a static pattern corresponding to the pattern to be projected on the substrate P is used, but each of the plurality of projection optical modules PL1 to PL6 is used. At the position (illumination position of each projection optical module) of illumination area | region IR1-IR6, DMD (micromirror device) which consists of many movable micromirrors, SLM (spatial light modulation element), etc. The exposure method without a mask which arrange | positions and transfers a pattern to the board | substrate P may be sufficient, generating dynamic pattern light by DMD or SLM in synchronism with the conveyance movement of the board | substrate P. FIG. In this case, DMD and SLM which produce | generate a dynamic pattern correspond to a mask member.

1 device manufacturing system 2 substrate supply apparatus
4 substrate recovery device 5 upper controller
11 mask holding mechanism 12 substrate supporting mechanism
13: light source device 16: lower control device
21 mask holding drum 25 substrate supporting drum
31 light source unit 32 light guide member
41: 1/4 wave plate 51: collimator lens
52: fly eye lens 53: condenser lens
54: cylindrical lens 55: illumination field of view aperture
56: relay lens 61: partial optical system
62: reflection optical system 63: projection field aperture
64: focus correction optical member 65: optical member for image shift
66: optical member for magnification correction 67: rotation correction mechanism
68: polarization adjusting mechanism 71: first lens group
72: first concave mirror 76: first deflection member
77: second deflection member 78: third deflection member
79: fourth deflection member 91: first prism
92: second prism 93: polarization separation surface
100: reflective optical system (second embodiment)
104: 1/2 wave plate (second embodiment)
105: first deflection member (second embodiment)
106: second deflection member (second embodiment)
107: 1/2 wave plate (second embodiment)
111: 1st light shielding plate (2nd embodiment)
112: second light shielding plate (second embodiment)
130: reflective optical system (third embodiment)
131: partial optical system (third embodiment)
150: substrate support mechanism (fourth embodiment)
151: driving roller (fourth embodiment)
P: Substrate FR1: Roll for Supply
FR2: Roll for recovery U1 ~ Un: Processing device
U3: exposure apparatus (substrate processing apparatus) M: mask
AX1: 1st axis AX2: 2nd axis
P1: mask surface P2: support surface
P3: first reflection surface P4: second reflection surface
P5: third reflective surface P6: fourth reflective surface
P7: Middle Top
P10: 1st polarization splitting surface (2nd embodiment)
P11: 2nd polarization splitting surface (2nd embodiment)
P12: 1st reflective surface (2nd embodiment)
P13: 2nd reflecting surface (2nd embodiment)
P15: Mask surface of virtual image (3rd Embodiment)
P16: upper image of the virtual image (third embodiment)
EL1: Illumination light beam EL2a: First projection light beam
EL2b: second projection light beam
EL3: 1st projection light beam of a virtual image (3rd embodiment)
EL4: 1st projection light beam of a virtual image (3rd embodiment)
Rm: radius of curvature Rfa: radius of curvature
CL: center plane PBS: polarized beam splitter
PBS1: 1st polarizing beam splitter (2nd embodiment)
PBS2: 2nd polarizing beam splitter (2nd embodiment)
IR1 ~ IR6: Illumination Area IL1 ~ IL6: Illumination Optical System
ILM: illumination optical module PA1 to PA6: projection area
PL1 to PL6: Projection Optical System PLM: Projection Optical Module
BX1: first optical axis BX2: second optical axis

Claims (8)

An image intersecting with the first direction while forming an image of the mask pattern in the illumination region set to be on the mask and extending in the first direction in an elongated manner in the projection area set on the substrate; A scanning exposure apparatus for projecting and exposing an image of the mask pattern onto the substrate by scanning the mask in two directions and the substrate,
A refractive lens group provided between the mask and the substrate, the refractive lens group having a circular imaging field around the optical axis extending in the second direction;
A reflective optical member disposed on a pupil plane by the refractive lens group;
Disposed at a first image height portion eccentric in the direction corresponding to the second direction from the optical axis in the imaging field of the refractive lens group, and reflecting the imaging light flux from the illumination region toward the refractive lens group. A first polarizing beam splitter for the purpose of
An illumination optical system for irradiating the mask with illumination light that is linearly polarized light reflected by the imaging polarization beam from the illumination region by the first polarization beam splitter;
Disposed at a position corresponding to the second image portion on the opposite side to the first image portion, with the optical axis in the imaging field of the refractive lens group interposed therebetween, reflected from the first polarization beam splitter, A second polarization beam splitter for reflecting an imaging light beam emitted from said second image portion of said refractive lens group toward said projection area after being reflected by said reflective optical member through said first image portion;
A wavelength which exits from the first polarizing beam splitter and passes through the refractive lens group, the reflective optical member, and the refractive lens group in order to change the imaging light beam incident on the second polarizing beam splitter into an orthogonal polarization state. Plate,
Reflecting the imaging light beam passing through the second polarizing beam splitter to guide the first polarizing beam splitter from the opposite side of the refractive lens group, and between the second polarizing beam splitter and the first polarizing beam splitter And a deflection member for deflecting the optical path so as to form an intermediate image plane which is conjugated with each of the illumination region and the projection region.
The length of the optical path in the depth direction from the illumination region through the first polarizing beam splitter to the refractive lens group is from the refractive lens group through the second polarizing beam splitter to the intermediate image plane. The length of the optical path in the depth direction from the intermediate image surface via the first polarizing beam splitter to the refractive lens group is set longer than the length of the optical path in the depth direction of the second polarizing beam splitter. Scanning exposure which arrange | positioned the said mask, the said board | substrate, the said 1st polarizing beam splitter, the 2nd polarizing beam splitter, and the said deflection member so that it may be set shorter than the length of the optical path of the depth direction from the said refractive lens group to the said projection area | region. Device. The method according to claim 1,
The first polarizing beam splitter includes a polarization splitting surface that reflects the imaging light flux from the illumination region toward the refractive lens group and transmits the imaging light flux that is changed into a polarization state orthogonal by the wave plate. have,
The second polarizing beam splitter includes a polarization splitting surface that reflects the imaging light beam from the refractive lens group toward the projection area, and transmits the imaging light beam that is changed into a polarization state orthogonal by the wave plate. It has a scanning exposure apparatus. The method according to claim 2,
The deflection member,
A first reflection surface reflecting the imaging light beam passing through the second polarizing beam splitter and running parallel to the optical axis to face the direction of the optical axis, and the imaging light beam reflected from the first reflection surface; A second reflecting surface that reflects from the opposite side of the refractive lens group toward the first polarizing beam splitter in parallel with the optical axis,
The intermediate image plane is a scanning exposure apparatus formed in an optical path of the imaging light flux between the first reflection surface and the second reflection surface. The method according to any one of claims 1 to 3,
The said wavelength plate is a scanning exposure apparatus which is a 1/2 wavelength plate arrange | positioned in the optical path between the said 1st polarizing beam splitter and the said refractive lens group. The method according to any one of claims 1 to 3,
The said projection area | region is a scanning exposure apparatus set to the rectangular area | region whose ratio with the length of the said 2nd direction / the length of the said 1st direction becomes 1/4 or less. The method according to any one of claims 1 to 3,
And the mask is a cylindrical mask provided rotatably about a first axis extending in the first direction and holding the pattern along a cylindrical outer circumferential surface of a predetermined radius from the first axis. The method according to claim 6,
The substrate is a long substrate having a long flexibility in the second direction,
The long substrate is positioned rotatably about a second axis parallel to the first axis, and the long substrate is supported by a portion of a cylindrical support surface having a predetermined radius from the second axis, while the long substrate is positioned in the projection area. And a substrate support drum for moving in the second direction, which is a long direction. A device manufacturing method for forming a device on a substrate,
Forming a photosensitive functional layer on the surface of the substrate,
Scanning scanning the image of the said mask pattern corresponding to the said device to the said photosensitive functional layer of the said board | substrate using the scanning exposure apparatus of any one of Claims 1-3,
Forming a device according to the mask pattern on the surface of the substrate by wet treating the exposed substrate.

Images