KR101903941B1 - Exposure processing device, device manufacturing system and method for manufacturing device - Google Patents

Abstract

An intermediate image is formed by imaging the first projected luminous flux EL2a from the mask M and the second projected luminous flux EL2b from the intermediate top plane P7 on which the intermediate image is formed is re- And a light amount reduction unit that reduces the amount of light that is projected onto the substrate P resulting from the first projection light EL2a. The projection optical system PL includes a projection optical system PL, And a first projection light EL2a projected from the partial optical system 61 as an intermediate image plane P7 to form an image of the first projection light EL2a on the intermediate image plane P7 And a reflecting optical system 62 for guiding the second projection light EL2b from the intermediate top plane P7 to the partial optical system 61. The partial optical system 61 has a reflecting optical system 62 for guiding the second projection light EL2b from the intermediate top plane P7 to the partial optical system 61, And the second projection light EL2b is recombined to form a projected image on the substrate P. [

Description

TECHNICAL FIELD [0001] The present invention relates to an exposure apparatus, a device manufacturing system, and a device manufacturing method.

The present invention relates to an exposure apparatus, a device manufacturing system, and a device manufacturing method.

2. Description of the Related Art Conventionally, as a substrate processing apparatus, an exposure apparatus in which a projection optical system is disposed between a mask and a plate (substrate) is known (see, for example, Patent Document 1). This projection optical system includes a lens group (group), a plane mirror, two polarizing beam splitters, two mirrors, a quarter wave plate, and a field stop. In this exposure apparatus, the projection light of the S-polarized light illuminated to the projection optical system via the mask is reflected by one of the polarization beam splitters. The reflected S-polarized light is converted into circularly polarized light by passing through the? / 4 wave plate. The projection light of the circularly polarized light passes through the lens group and is reflected by the plane reflecting mirror. The reflected circularly polarized light is converted into P polarized light by passing through the? / 4 wave plate. P polarized light transmits through the other polarizing beam splitter and is reflected by one of the reflecting mirrors. The projection light of the P-polarized light reflected by the one-side reflector forms an intermediate image in the field stop. The projection light of the P-polarized light that has passed through the field stop is reflected by the other reflecting mirror and again enters the one polarizing beam splitter. P polarized light transmits the one polarizing beam splitter. The transmitted P-polarized light is converted into circularly polarized light by passing through the? / 4 wave plate. The projection light of the circularly polarized light passes through the lens group and is reflected by the plane reflecting mirror. The reflected circularly polarized light is converted into S polarized light by passing through the? / 4 wave plate. The S polarized light is reflected by the other polarizing beam splitter and reaches the plate.

Patent Document 1: JP-A-8-64501

Here, a part of the projection light reflected and transmitted by the polarizing beam splitter becomes a leakage light. That is, a part of the projection light reflected by the polarizing beam splitter is separated, a part of the separated projection light is leaked and transmitted through the polarizing beam splitter, or part of the transmission light transmitted through the polarizing beam splitter is separated, A part of the separated projection light is reflected by the polarizing beam splitter as leakage light. In this case, there is a possibility that a defective image (defective image) is formed on the substrate due to the imaging of the leakage light on the substrate. In this case, since a projected image is formed on the substrate by the projection light, and a defective image is formed by the leakage light, there is a possibility that the double exposure occurs.

An object of the present invention is to provide an exposure apparatus and a device capable of reducing the influence of leakage light on a projected image formed on a substrate and projecting the projected image onto a substrate, A manufacturing system and a device manufacturing method.

According to a first aspect of the present invention, there is provided an exposure apparatus for projecting and exposing a mask pattern onto a long substrate having flexibility, the apparatus comprising: a cylindrical body having a predetermined curvature radius from the first axis, A mask holding drum for holding the mask pattern along a pattern surface of a cylindrical shape having a predetermined curvature radius from the second axis, the mask holding drum being rotatable about a second axis parallel to the first axis, A substrate support drum for supporting the substrate by a part thereof and moving the substrate in a longitudinal direction and a second projection optical system for projecting a first projection light from the mask pattern held by the mask holding drum, A second optical system for guiding the first projection light emitted from the partial optical system to the intermediate upper surface, And a light guiding optical system for guiding the first projection light after passing through the intermediate upper surface to the partial optical system as second projection light, wherein the partial optical system incident on the second projection light causes the intermediate image to be reconstructed A projection optical system for projecting a projected image onto the substrate supported by the substrate support drum; and a second projection optical system for projecting a part of the first projection light onto the substrate as leakage light, (Defective image) formed by the leakage light of a part of the first projection light is formed in the direction along the surface of the substrate or in the direction of the depth of focus There is provided an exposure apparatus provided with a light amount reducing section that performs different operations.

According to a second aspect of the present invention, there is provided a device manufacturing system including an exposure apparatus according to the first aspect of the present invention and a substrate supply device for supplying the substrate to the exposure apparatus in a roll manner.

According to a third aspect of the present invention, there is provided a projection exposure apparatus for projecting and exposing a mask pattern onto a substrate using the exposure apparatus according to the first aspect of the present invention, A device manufacturing method comprising forming a device is provided.

According to the aspect of the present invention, it is possible to provide an exposure apparatus, a device manufacturing system, and a device manufacturing method that can reduce the amount of light that is projected onto a substrate and can project projected images onto a substrate.

1 is a diagram showing a configuration of a device manufacturing system according to the first embodiment.
2 is a diagram showing the entire configuration of an exposure apparatus (substrate processing apparatus) according to the first embodiment.
3 is a diagram showing the arrangement of an illumination area and a projection area of the exposure apparatus shown in Fig.
4 is a diagram showing the configuration of an illumination optical system and a projection optical system of the exposure apparatus shown in Fig.
Fig. 5 is a development (expansion) of a circular full imaging field of view by the projection optical module on the YZ plane. Fig.
6 is a flowchart showing a device manufacturing method according to the first embodiment.
7 is a diagram showing the configuration of an illumination optical system and a projection optical system of the exposure apparatus according to the second embodiment.
8 is a diagram showing a configuration of a projection optical system of the exposure apparatus according to the third embodiment.
Fig. 9 is a diagram showing the entire configuration of an exposure apparatus (substrate processing apparatus) according to the fourth embodiment.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A mode (embodiment) for carrying out the present invention will be described in detail with reference to the drawings. The present invention is not limited to the following embodiments. Incidentally, the constituent elements described below include those that can be easily conceived by those skilled in the art, and substantially the same ones. In addition, the constituent elements described below can be suitably combined. In addition, various omissions, substitutions or alterations of the constituent elements can be made without departing from the gist of the present invention.

[First Embodiment]

The exposure apparatus of the first embodiment is assembled in a device manufacturing system that performs exposure processing on a substrate and performs various processing on the substrate after exposure to manufacture a device. First, a device manufacturing system will be described.

<Device Manufacturing System>

1 is a diagram showing a configuration of a device manufacturing system according to the first embodiment. The device manufacturing system 1 shown in Fig. 1 is a line (flexible display manufacturing line) for manufacturing a flexible display as a device. The flexible display includes, for example, an organic EL display. This device manufacturing system 1 is a device manufacturing system 1 in which various processes are continuously carried out on a fed substrate P from a feed roll FR1 on which a flexible substrate P is wound in the form of a roll, Roll-to-roll method in which the processed substrate P is wound as a flexible device on the recovery roll FR2 after the above-described process. In the device manufacturing system 1 of the first embodiment, the substrate P, which is a film-like sheet, is fed from the feed roll FR1 and the substrate P fed out from the feed roll FR1 is fed sequentially , n processing units (U1), U2, U3, U4, U5, ... , Un until they are wound on the rotating roll FR2. First, the substrate P to be processed by the device manufacturing system 1 will be described.

As the substrate P, foil (foil) made of a metal or alloy such as a resin film, stainless steel, or the like is used. Examples of the material of the resin film include polyethylene resin, polypropylene resin, polyester resin, ethylene vinyl copolymer resin, polyvinyl chloride resin, cellulose resin, polyamide resin, polyimide resin, polycarbonate resin, polystyrene resin, And one or more of vinyl acetate resin.

It is preferable that the substrate P be selected so as not to have a significantly large thermal expansion coefficient so that the amount of deformation due to heat received in various treatments performed on the substrate P, for example, can be substantially ignored. The thermal expansion coefficient may be set to be smaller than a threshold value according to the process temperature or the like, for example, by mixing an inorganic filler with a resin film. The inorganic filler may be, for example, titanium oxide, zinc oxide, alumina, silicon oxide, or the like. The substrate P may be a very thin glass single layer having a thickness of about 100 占 퐉 manufactured by a float method or the like and may be a laminate obtained by bonding the resin film, .

The substrate P thus configured is rolled into a roll to become a supply roll FR1 and this supply roll FR1 is mounted in the device manufacturing system 1. [ The device manufacturing system 1 equipped with the supply roll FR1 repeatedly executes various processes for manufacturing the device on the substrate P fed out from the feed roll FR1. Therefore, the substrate P after processing becomes a state in which a plurality of devices are connected. That is, the substrate P fed out from the supply roll FR1 is a substrate for obtaining multiple faces. The substrate P may be obtained by modifying the surface of the substrate P by a predetermined pretreatment beforehand or by activating the substrate P by forming a fine partition structure (concave-convex structure) for precision patterning on the surface Things are okay.

The substrate P after the treatment is recovered as the recovery roll FR2 by being wound in a roll shape. The rotating roll FR2 is mounted on a dicing device (not shown). The dicing apparatus to which the rotation roll FR2 is mounted divides (dices) the processed substrate P for each device to obtain a plurality of devices. The dimension of the substrate P is, for example, about 10 cm to 2 m in the width direction (direction in which the substrate is short), and the dimension in the length direction (long direction) is 10 m or more . The dimensions of the substrate P are not limited to the above dimensions.

Next, a device manufacturing system will be described with reference to Fig. In Fig. 1, the coordinate system is an orthogonal coordinate system in which the X direction, the Y direction, and the Z direction are orthogonal. The X direction is a direction connecting the supply roll FR1 and the recovery roll FR2 in the horizontal plane. The Y direction is a direction orthogonal to the X direction within the horizontal plane. The Y direction is the axial direction of the supply roll FR1 and the recovery roll FR2. The Z direction is a direction orthogonal to the X direction and the Y direction (vertical direction).

The device manufacturing system 1 includes a substrate supply device 2 for supplying a substrate P and processing devices U1 to Un for performing various processes on the substrate P supplied by the substrate supply device 2, A substrate collecting device 4 for collecting a substrate P processed by the processing devices U1 to Un and an upper control device for controlling each device of the device manufacturing system 1 5).

In the substrate feeder 2, a feed roll FR1 is rotatably mounted. The substrate feeder 2 includes a drive roller R1 for feeding the substrate P from the mounted supply roll FR1 and a drive roller R1 for moving the substrate P in the width direction (Y direction) Controller EPC1. The drive roller R1 rotates while sandwiching the front and back surfaces of the substrate P and sends the substrate P in the transport direction from the supply roll FR1 to the rotation roll FR2, And supplies the substrate P to the processing units U1 to Un. At this time, the edge position controller EPC1 controls the position of the substrate P so that the position at the edge in the width direction of the substrate P falls within the range of about 占 퐉 to about 占 퐉 relative to the target position. And the position in the width direction of the substrate P is corrected.

In the substrate collection apparatus 4, a rotation roll FR2 is rotatably mounted. The substrate recovery apparatus 4 includes a drive roller R2 for pulling the processed substrate P toward the recovery roller FR2 and an edge position Controller EPC2. The substrate collecting apparatus 4 rotates while sandwiching both the front and back surfaces of the substrate P by the driving roller R2 to draw the substrate P in the carrying direction and rotates the rotating roll FR2 The substrate P is wound up. At this time, the edge position controller EPC2 is constructed in the same manner as the edge position controller EPC1, and the edge position controller EPC2 is arranged in the width direction of the substrate P so that the width direction edge of the substrate P does not deviate in the width direction. .

The processing apparatus U1 is a coating apparatus for applying a photosensitive (photosensitive) functional liquid to the surface of the substrate P supplied from the substrate supply apparatus 2. [ As the photosensitive functional liquid, for example, a photoresist, a photosensitive silane coupling material, a UV curable resin liquid, or other photosensitive plating catalyst solution is used. The processing apparatus U1 is provided with a dispensing mechanism Gp1 and a drying mechanism Gp2 in this order from the upstream side in the carrying direction of the substrate P. [ The application mechanism Gp1 has an impression cylinder roller DR1 around which the substrate P is wound and an application roller DR2 opposed to the pushing roller DR1. The application mechanism Gp1 supports the substrate P by the pressing roller DR1 and the application roller DR2 while the supplied substrate P is wound around the pressing roller DR1. The application mechanism Gp1 applies the photosensitive functional liquid by the application roller DR2 while rotating the platen roller DR1 and the application roller DR2 while moving the substrate P in the transport direction. The drying mechanism Gp2 blows air for drying such as hot air or dry air to remove the solute (solvent or water) contained in the photosensitive functional liquid and to dry the substrate P coated with the photosensitive functional liquid, A photosensitive functional layer is formed on the photosensitive layer (P).

The processing apparatus U2 is a processing apparatus for transferring the substrate P conveyed from the processing apparatus U1 to a predetermined temperature (for example, several tens to 120 degrees centigrade) to stabilize the photosensitive functional layer formed on the surface of the substrate P. [ ). The processing apparatus U2 is provided with a heating chamber HA1 and a cooling chamber HA2 in this order from the upstream side in the carrying direction of the substrate P. [ In the heating chamber HA1, a plurality of rollers and a plurality of air-turn bars are provided therein, and a plurality of rollers and a plurality of air-turn bars constitute a conveying path of the substrate P. The plurality of rollers are provided in a rolling contact with the back surface of the substrate P, and a plurality of air-turn bars are provided in a non-contact state on the surface side of the substrate P. The plurality of rollers and the plurality of air-turn bars are arranged to be a conveying path of a meandering (serpentine) shape in order to lengthen the conveying path of the substrate P. The substrate P passing through the heating chamber HA1 is heated to a predetermined temperature while being conveyed along a serpentine conveying path. The cooling chamber HA2 cools the substrate P to the ambient temperature so that the temperature of the substrate P heated in the heating chamber HA1 coincides with the environmental temperature of the subsequent process (processing device U3). The cooling chamber HA2 is provided with a plurality of rollers therein and the plurality of rollers are arranged in a row in the form of a serpentine conveying path in order to lengthen the conveying path of the substrate P, . The substrate P passing through the inside of the cooling chamber HA2 is cooled while being conveyed along a serpentine conveyance path. A driving roller R3 is provided on the downstream side in the conveying direction of the cooling chamber HA2 and the driving roller R3 rotates while holding the substrate P passing through the cooling chamber HA2, P to the processing unit U3.

The processing apparatus (substrate processing apparatus) U3 projects a pattern such as a circuit for display or wiring on a substrate (photosensitive substrate) P provided with a photosensitive functional layer on its surface supplied from the processing apparatus U2 And is an exposure device for exposing the wafer. The processing apparatus U3 illuminates the reflection type mask M with an illumination light flux and projects the projection light flux obtained by reflecting the illumination light flux by the mask M onto the substrate P Exposure. The processing apparatus U3 includes a driving roller R4 for feeding the substrate P supplied from the processing apparatus U2 to the downstream side in the carrying direction and a driving roller R4 for adjusting the position in the width direction And an edge position controller (EPC3). The driving roller R4 rotates while sandwiching both the front and back surfaces of the substrate P and feeds the substrate P toward the exposure position by delivering the substrate P to the downstream side in the carrying direction. The edge position controller EPC3 is constructed in the same manner as the edge position controller EPC1 and corrects the position in the width direction of the substrate P so that the width direction of the substrate P at the exposure position becomes the target position . The processing apparatus U3 has two sets of driving rollers R5 and R6 for sending the substrate P to the downstream side in the conveying direction in a state in which the substrate P after being exposed is loosened. The two sets of driving rollers R5 and R6 are arranged at a predetermined interval in the conveying direction of the substrate P. [ The drive roller R5 rotates while sandwiching the upstream side of the substrate P to be transported and the drive roller R6 rotates while sandwiching the downstream side of the transported substrate P, To the processing unit U4. At this time, since the substrate P is loosened, it is possible to absorb the fluctuation of the conveying speed occurring on the downstream side in the conveying direction with respect to the driving roller R6, and the substrate P ) Can be insulated. In order to relatively align (align) the substrate P with a part of the mask pattern of the mask M, alignment marks or the like previously formed on the substrate P are formed in the processing apparatus U3 The alignment microscopes AM1 and AM2 are provided.

The processing apparatus U4 is a wet processing apparatus for carrying out a development processing (current image processing) by wet processing, electroless plating processing, and the like on the post-exposure substrate P carried from the processing apparatus U3. The processing apparatus U4 has three processing tanks BT1, BT2, and BT3 layered in the vertical direction (Z direction) and a plurality of rollers for transporting the substrate P in the processing apparatus U4. The plurality of rollers are disposed so as to be the conveying paths through which the substrates P pass through the inside of the three treatment tanks BT1, BT2, and BT3 in order. A drive roller R7 is provided on the downstream side of the treatment tank BT3 in the transport direction and the drive roller R7 rotates while sandwiching the substrate P that has passed through the treatment tank BT3, P to the processing unit U5.

Although not shown, the processing apparatus U5 is a drying apparatus for drying the substrate P carried from the processing apparatus U4. The processing apparatus U5 adjusts the water content adhering to the substrate P subjected to the wet processing in the processing apparatus U4 to a predetermined water content. The substrate P dried by the processing unit U5 is conveyed to the processing unit Un via several processing units. Then, after being processed in the processing unit Un, the substrate P is wound up on the recovery roll FR2 of the substrate recovery apparatus 4. [

The upper control device 5 collectively controls the substrate feeding device 2, the substrate collecting device 4 and the plurality of processing devices U1 to Un. The upper control apparatus 5 controls the substrate supply apparatus 2 and the substrate collection apparatus 4 to transport the substrate P from the substrate supply apparatus 2 to the substrate collection apparatus 4. [ The upper control device 5 controls the plurality of processing devices U1 to Un while synchronizing with the conveyance of the substrate P to execute various processes on the substrate P. [

&Lt; Exposure Apparatus (Substrate Processing Apparatus) &gt;

Next, a configuration of an exposure apparatus (substrate processing apparatus) as the processing apparatus U3 of the first embodiment will be described with reference to Figs. 2 to 4. Fig. 2 is a diagram showing the entire configuration of an exposure apparatus (substrate processing apparatus) according to the first embodiment. 3 is a diagram showing the arrangement of an illumination area and a projection area of the exposure apparatus shown in Fig. 4 is a diagram showing the configuration of an illumination optical system and a projection optical system of the exposure apparatus shown in Fig.

The exposure apparatus U3 shown in Fig. 2 is a so-called scanning exposure apparatus and is a so-called scanning exposure apparatus in which an image of a mask pattern formed on the outer peripheral surface of a cylindrical mask M while conveying the substrate P in the carrying direction (scanning direction) (Image) onto the surface of the substrate P by projection exposure. In Figs. 2 and 3, an orthogonal coordinate system in which the X direction, the Y direction, and the Z direction are orthogonal is used, and the same rectangular coordinate system as that in Fig. 1 is used.

First, the mask (mask member) M used in the exposure apparatus U3 will be described. The mask M is, for example, a reflection type mask using a metal cylindrical body. The mask M is formed as a cylindrical body having an outer circumferential surface (circumferential surface) having a radius of curvature Rm around the first axis AX1 extending in the Y direction, and has a constant thickness in the radial direction. The circumferential surface of the mask M is a mask surface (pattern surface) P1 on which a predetermined mask pattern (pattern) is formed. The mask surface P1 includes a highly reflective portion that reflects the light beam in a predetermined direction with high efficiency and a reflection suppressing portion that does not reflect the light beam in a predetermined direction or reflects the light beam with low efficiency, And is formed by the high reflection part and the reflection restraining part. Since the mask M is a cylindrical metal member, it can be manufactured at low cost and can be manufactured by using a laser beam drawing apparatus of a high precision. In addition to the mask patterns (various patterns for the panel, , A scale for measuring an encoder, etc.) can be precisely formed on the cylindrical outer circumferential surface.

All or part of the panel pattern corresponding to one display device may be formed on the mask M, and a pattern for a panel corresponding to a plurality of display devices may be formed. A plurality of patterns for the panel may be repeatedly formed on the mask M in the circumferential direction around the first axis AX1 and the small pattern for the panel is repeated in the direction parallel to the first axis AX1 It is also possible to form a plurality thereof. In addition, the mask M may be formed with a pattern for a panel of the first display device and a pattern for a panel of the second display device having a different size from the first display device. The mask M may have a circumferential surface having a radius of curvature Rm around the first axis AX1 and is not limited to a cylindrical shape. For example, the mask M may be an arc plate having a circumferential surface. The mask M may be a thin plate, or may have a circular surface by curving the mask M in a thin plate shape.

Next, the exposure apparatus U3 shown in Fig. 2 will be described. The exposure apparatus U3 is provided with a mask holding mechanism 11, a substrate holding mechanism 12, a light source (not shown), and the like, in addition to the driving rollers R4 to R6, the edge position controller EPC3 and the alignment microscopes AM1 and AM2. An optical system IL, a projection optical system PL, and a lower control device 16. The exposure apparatus U3 guides the illumination luminous flux EL1 emitted from the light source device 13 by the illumination optical system IL and the projection optical system PL to the mask holding mechanism 11 M onto the substrate P supported by the substrate supporting mechanism 12. The substrate P is supported by the substrate supporting mechanism 12,

The subordinate control device 16 controls each section of the exposure apparatus U3 and causes each section to execute processing. The lower control device 16 may be part or all of the upper control device 5 of the device manufacturing system 1. [ The lower control device 16 is controlled by the higher control device 5 and may be a different device from the higher control device 5. [ The subordinate control device 16 includes, for example, a computer.

The mask holding mechanism 11 has a mask holding drum 21 (mask holding member) for holding the mask M and a first driving section 22 for rotating the mask holding drum 21. The mask holding drum 21 holds the mask M such that the first axis AX1 of the mask M is the center of rotation. The first driving part 22 is connected to the lower control device 16 and rotates the mask holding drum 21 around the first axis AX1 as a rotation center.

In the mask holding mechanism 11, the mask M of the cylindrical body is held by the mask holding drum 21, but the present invention is not limited to this configuration. The mask holding mechanism 11 may hold and hold a thin mask M along the outer peripheral surface of the mask holding drum 21. [ The mask holding mechanism 11 may hold the mask M having a pattern formed on the surface of the plate member curved in an arc shape on the outer peripheral surface of the mask holding drum 21. [

The substrate supporting mechanism 12 includes a substrate supporting drum 25 for supporting the substrate P, a second driving part 26 for rotating the substrate supporting drum 25, a pair of air turn bars ATB1, ATB2, and a pair of guide rollers 27, 28, respectively. The substrate supporting drum 25 is formed into a cylindrical shape having an outer circumferential surface (circumferential surface) which is a radius of curvature Rfa centered on a second axis AX2 extending in the Y direction. Here, the first axis AX1 and the second axis AX2 are parallel to each other, and the plane passing through the first axis AX1 and the second axis AX2 is the center plane CL. A part of the circumferential surface of the substrate supporting drum 25 is a supporting surface P2 for supporting the substrate P. [ That is, the substrate supporting drum 25 supports the substrate P by winding the substrate P on the supporting surface P2. The second driving part 26 is connected to the lower control device 16 and rotates the substrate supporting drum 25 about the second axis AX2 as a rotation center. The pair of air / turn bars ATB1 and ATB2 are provided on the upstream side and the downstream side, respectively, of the substrate P in the carrying direction with the substrate supporting drum 25 interposed therebetween. The pair of air / turn bars ATB1 and ATB2 are provided on the front surface side of the substrate P and disposed on the lower side of the support surface P2 of the substrate supporting drum 25 in the vertical direction (Z direction) have. The pair of guide rollers 27 and 28 are provided on the upstream side and the downstream side in the transport direction of the substrate P with a pair of air-turn bars ATB1 and ATB2 interposed therebetween. The pair of guide rollers 27 and 28 guides the substrate P conveyed from the driving roller R4 by one of the guide rollers 27 to the air turn bar ATB1, The control unit 28 guides the substrate P conveyed from the air / turn bar ATB2 to the driving roller R5.

The substrate support mechanism 12 guides the substrate P conveyed from the driving roller R4 to the air turn bar ATB1 by the guide roller 27 and rotates the air turn bar ATB1 The transferred substrate P is introduced into the substrate supporting drum 25. The substrate supporting mechanism 12 rotates the substrate supporting drum 25 by the second driving unit 26 to rotate the substrate P introduced to the substrate supporting drum 25 toward the supporting surface of the substrate supporting drum 25. [ And is transported toward the air / turn bar ATB2 while being supported by the second guide P2. The substrate support mechanism 12 guides the substrate P conveyed by the air turn bar ATB2 to the guide roller 28 by the air turn bar ATB2 and passes through the guide roller 28 And guides the substrate P to the drive roller R5.

At this time, the lower control device 16 connected to the first driving part 22 and the second driving part 26 is configured to synchronously rotate the mask holding drum 21 and the substrate supporting drum 25 at a predetermined rotation speed ratio The image of the mask pattern formed on the mask surface P1 of the mask M is formed on the surface of the substrate P wound around the support surface P2 of the substrate support drum 25 (I.e., one surface).

The light source device 13 emits the illumination luminous flux EL1 illuminated to the mask M. [ The light source device 13 has a light source unit 31 and a light guiding member 32. The light source unit 31 is a light source that emits ultraviolet light having a strong photoactive action as light with a predetermined wavelength range suitable for exposure of the photosensitive functional layer on the substrate P. [ As the light source unit 31, for example, a lamp light source such as a mercury lamp having a bright line (g line, h line, i line or the like) in the ultraviolet region, a laser diode having a oscillation peak in a non- Such as KrF excimer laser light (wavelength 248 nm), ArF excimer laser light (wavelength 193 nm), and XeCl excimer laser (wavelength 308 nm), which emit a solid light source such as a light emitting diode A light source can be used.

Here, the illumination luminous flux EL1 emitted from the light source device 13 is incident on the polarizing beam splitter PBS described later. The illumination luminous flux EL1 is an illumination luminous flux EL1 which is incident on the polarizing beam splitter PBS so as to prevent energy loss from being caused by separation of the illumination luminous flux EL1 by the polarizing beam splitter PBS It is preferable that the light flux is almost all reflected. The polarizing beam splitter PBS reflects a light flux that becomes linearly polarized light of S polarized light and transmits the light flux that becomes linearly polarized light of P polarized light. It is therefore preferable that the light source unit 31 of the light source device 13 emits laser light whose illumination luminous flux EL1 incident on the polarizing beam splitter PBS becomes a light flux of linearly polarized light (S polarized light). Since the laser light has a high energy density, the illuminance of the light beam projected onto the substrate P can be appropriately secured.

The light guiding member 32 guides the illumination luminous flux EL1 emitted from the light source unit 31 to the illumination optical system IL. The light guiding member 32 is composed of an optical fiber or a relay module using a mirror or the like. The light guide member 32 separates a plurality of illumination luminous fluxes EL1 from the light source unit 31 and supplies the plurality of illumination luminous fluxes EL1 to a plurality of illumination optical systems IL). The light guide member 32 may be formed by a polarization maintaining fiber (polarization preserving fiber) as the optical fiber when the light flux emitted from the light source unit 31 is laser light, for example, It is also acceptable to conduct the light while maintaining the state of polarization of the laser light.

Here, as shown in Fig. 3, the exposure apparatus U3 of the first embodiment is an exposure apparatus on the assumption of a so-called multi-lens system. 3 shows a plan view (left side view in Fig. 3) of the illumination area IR on the mask M held by the mask holding drum 21 as viewed from the -Z side, A plan view (right side view in Fig. 3) of the projection area PA on the supported substrate P viewed from the + Z side is shown. Symbol Xs in Fig. 3 represents the moving direction (rotational direction) of the mask holding drum 21 and the substrate supporting drum 25. [ The multi-lens-system exposure apparatus U3 illuminates an illumination luminous flux EL1 to a plurality of illumination regions IR1 to IR6 (for example, six in the first embodiment) on the mask M, A plurality of projected luminous fluxes EL2 obtained by reflecting the luminous flux EL1 to the respective illumination regions IR1 to IR6 are divided into a plurality of projection regions PA1 to PA6 (for example, six in the first embodiment) PA6.

First, a plurality of illumination regions IR1 to IR6 illuminated by the illumination optical system IL will be described. 3, the plurality of illumination regions IR1 to IR6 are arranged in two rows in the rotational direction with the center plane CL therebetween, and on the mask M on the upstream side in the rotational direction, Th second illumination region IR2, the third illumination region IR3 and the fifth illumination region IR5 are arranged on the mask M on the downstream side in the rotation direction, A fourth illumination region IR4, and a sixth illumination region IR6.

Each of the illumination regions IR1 to IR6 has a parallel long side extending in the axial direction (Y direction) of the mask M and an elongated trapezoidal (rectangular) region having a long side. At this time, each of the trapezoidal illumination regions IR1 to IR6 has its short side located on the center plane CL side and its long side located on the outer side. The odd-numbered first illumination region IR1, the third illumination region IR3, and the fifth illumination region IR5 are arranged at predetermined intervals in the axial direction. In addition, the even-numbered second illumination region IR2, the fourth illumination region IR4, and the sixth illumination region IR6 are arranged at predetermined intervals in the axial direction. At this time, the second illumination region IR2 is disposed between the first illumination region IR1 and the third illumination region IR3 in the axial direction. Likewise, the third illumination region IR3 is disposed between the second illumination region IR2 and the fourth illumination region IR4 in the axial direction. The fourth illumination region IR4 is disposed between the third illumination region IR3 and the fifth illumination region IR5 in the axial direction. The fifth illumination region IR5 is arranged between the fourth illumination region IR4 and the sixth illumination region IR6 in the axial direction. Each of the illumination regions IR1 to IR6 is arranged such that the triangular portions of the oblique side portions of the trapezoidal illumination regions adjacent to each other overlap with each other when viewed from the circumferential direction of the mask M. [ In the first embodiment, each of the illumination areas IR1 to IR6 is a trapezoidal area, but may be a rectangular area.

The mask M has a pattern formation area A3 in which a mask pattern is formed and a pattern non-formation area A4 in which no mask pattern is formed. The pattern non-formation area A4 is an area which is difficult to reflect, which absorbs the illumination light flux EL1, and is arranged so as to surround the pattern formation area A3 in a frame shape. The first to sixth illumination regions IR1 to IR6 are arranged so as to cover the entire width of the pattern formation region A3 in the Y direction.

The illumination optical system IL is provided with a plurality of (six in the first embodiment, for example) according to the plurality of illumination regions IR1 to IR6. The illumination luminous flux EL1 from the light source device 13 is respectively incident on the plurality of illumination optical systems IL1 to IL6. Each of the illumination optical systems IL1 to IL6 guides each illumination luminous flux EL1 incident from the light source device 13 to each of the illumination areas IR1 to IR6. That is, the first illumination optical system IL1 guides the illumination luminous flux EL1 to the first illumination area IR1, and similarly, the second to sixth illumination optical systems IL2 to IL6 guide the illumination luminous flux EL1 To the second to sixth illumination regions IR2 to IR6. The plurality of illumination optical systems IL1 to IL6 are arranged in two rows in the circumferential direction of the mask M with the center plane CL therebetween. The plurality of illumination optical systems IL1 to IL6 are arranged on the side where the first, third and fifth illumination regions IR1, IR3 and IR5 are disposed (left side in Fig. 2) with the center plane CL therebetween, The first illumination optical system IL1, the third illumination optical system IL3, and the fifth illumination optical system IL5 are arranged. The first illumination optical system IL1, the third illumination optical system IL3, and the fifth illumination optical system IL5 are arranged at a predetermined interval in the Y direction. The plurality of illumination optical systems IL1 to IL6 are arranged on the side where the second, fourth and sixth illumination regions IR2, IR4 and IR6 are disposed (the right side in Fig. 2) with the center plane CL therebetween, The second illumination optical system IL2, the fourth illumination optical system IL4, and the sixth illumination optical system IL6 are arranged. The second illumination optical system IL2, the fourth illumination optical system IL4, and the sixth illumination optical system IL6 are arranged at a predetermined interval in the Y direction. At this time, the second illumination optical system IL2 is disposed between the first illumination optical system IL1 and the third illumination optical system IL3 in the axial direction. Similarly, the third illumination optical system IL3 is disposed between the second illumination optical system IL2 and the fourth illumination optical system IL4 in the axial direction. The fourth illumination optical system IL4 is disposed in the axial direction between the third illumination optical system IL3 and the fifth illumination optical system IL5. The fifth illumination optical system IL5 is disposed between the fourth illumination optical system IL4 and the sixth illumination optical system IL6 in the axial direction. The first illumination optical system IL1, the third illumination optical system IL3 and the fifth illumination optical system IL5, the second illumination optical system IL2, the fourth illumination optical system IL4 and the sixth illumination optical system IL6, Are arranged symmetrically with respect to the center plane CL as viewed from the Y direction.

Next, the respective illumination optical systems IL1 to IL6 will be described with reference to Fig. Since each of the illumination optical systems IL1 to IL6 has the same configuration, the first illumination optical system IL1 (hereinafter simply referred to as 'illumination optical system IL') will be described as an example.

The illumination optical system IL illuminates the light source image (light source image) (real image or virtual image) by the light source device 13 in the illumination area IR (first illumination area IR1) Is applied to a pupil position (equivalent to a Fourier transform plane) of the optical system IL using a Kohler illumination method. The illumination optical system IL is a fall illumination system using a polarization beam splitter (PBS). The illumination optical system IL includes an illumination optical module ILM, a polarization beam splitter PBS, a quarter wave plate (a wave plate (light source) (41).

4, the illumination optical module ILM includes a collimator lens 51, a fly eye lens 52, and a plurality of lenses 53, in order from the incident side of the illumination luminous flux EL1. A condenser lens 53 of a cylindrical lens 54, a cylindrical lens 54, an illumination field stop 55 and a plurality of relay lenses 56 and is provided on the first optical axis BX1. The collimator lens 51 is provided on the emission side of the light guide member 32 of the light source device 13. [ The optical axis of the collimator lens 51 is arranged on the first optical axis BX. The collimator lens 51 irradiates the entire surface on the incidence side of the fly-eye lens 52. The fly-eye lens 52 is provided on the emission side of the collimator lens 51. The center of the exit-side surface of the fly-eye lens 52 is disposed on the first optical axis BX1. The fly's eye lens 52 constituted by a plurality of rod lenses or the like divides the illumination luminous flux EL1 from the collimator lens 51 for each individual rod lens to form a plurality of point light source images (Condensing spot) is generated on the surface of the fly-eye lens 52 on the exit side, and the illumination light beam EL1 is subdivided by the rod lens to enter the condenser lens 53. [ The plane of the exit side of the fly's eye lens 52 from which the point light source image is generated is transmitted from the fly's eye lens 52 via the illumination field stop 55 to the first concave surface 52 of the projection optical system PL (Pupil plane) of the projection optical system PL (PLM) on which the reflection surface of the first concave mirror 72 is located by various lenses reaching the mirror 72 so as to be optically conjugate with each other . The condenser lens 53 is provided on the emission side of the fly-eye lens 52. The optical axis of the condenser lens 53 is arranged on the first optical axis BX1. The condenser lens 53 condenses the illumination luminous flux EL1 from the fly's eye lens 52 onto the cylindrical lens 54. [ The cylindrical lens 54 is a planar convex cylindrical lens whose incident side is flat and the outgoing side is convex. The cylindrical lens 54 is provided on the output side of the condenser lens 53. The optical axis of the cylindrical lens 54 is disposed on the first optical axis BX1. The cylindrical lens 54 emits the illumination luminous flux EL1 in a direction orthogonal to the first optical axis BX1 in the XZ plane. The illumination field stop 55 is provided adjacent to the exit side of the cylindrical lens 54. The opening of the illumination field stop 55 is formed in a trapezoidal or rectangular shape having the same shape as the illumination area IR and the center of the opening of the illumination field stop 55 is formed on the first optical axis BX1 . At this time, the illumination field stop 55 is arranged on the surface optically conjugate with the illumination area IR on the mask M by various lenses from the illumination field stop 55 to the mask M. The relay lens 56 is provided on the emission side of the illumination field stop 55. The optical axis of the relay lens 56 is disposed on the first optical axis BX1. The relay lens 56 causes the illumination luminous flux EL1 from the illumination field stop 55 to enter the polarization beam splitter PBS.

When the illumination luminous flux EL1 enters the illumination optical module ILM, the illumination luminous flux EL1 becomes a luminous flux that illuminates the entire surface of the fly-eye lens 52 on the incidence side by the collimator lens 51. [ The illumination luminous flux EL1 incident on the fly's eye lens 52 becomes the illumination luminous flux EL1 from each of the plurality of point light sources and enters the cylindrical lens 54 via the condenser lens 53 do. The illumination luminous flux EL1 incident on the cylindrical lens 54 diverges in a direction perpendicular to the first optical axis BX1 in the XZ plane. The illumination luminous flux EL1 emitted by the cylindrical lens 54 is incident on the illumination field stop 55. The illumination luminous flux EL1 incident on the illumination field stop 55 passes through the opening of the illumination field stop 55 and becomes a luminous flux having the same intensity distribution as the illumination area IR. The illumination luminous flux EL1 passed through the illumination field stop 55 enters the polarization beam splitter PBS via the relay lens 56. [

The polarizing beam splitter PBS is disposed between the illumination optical module ILM and the center plane CL with respect to the X axis direction. The polarization beam splitter PBS cooperates with the quarter wave plate 41 to reflect the illumination luminous flux EL1 from the illumination optical module ILM while reflecting the projected luminous flux EL2 ). In other words, the illumination luminous flux EL1 from the illumination optical module ILM is incident on the polarization beam splitter PBS as a reflected luminous flux, and the projected luminous flux (reflected light) EL2 from the mask M is incident on the polarizing beam splitter (PBS) as a transmitted light flux. That is, the illumination luminous flux EL1 incident on the polarizing beam splitter PBS is a reflected luminous flux that becomes linearly polarized light of the S polarized light, and the projected luminous flux EL2 incident on the polarized beam splitter PBS is a linearly polarized light P polarized light Is a transmitted light flux.

4, the polarizing beam splitter PBS includes a first prism 91, a second prism 92, and a polarized light separator (not shown) provided between the first prism 91 and the second prism 92 And has a surface 93. The first prism 91 and the second prism 92 are made of quartz glass and are triangular prisms in the XZ plane. The polarizing beam splitter PBS has a rectangular shape in the XZ plane by connecting the triangular prism 91 and the second prism 92 with the polarizing separation surface 93 interposed therebetween.

The first prism 91 is a prism on the side where the illumination luminous flux EL1 and the projected luminous flux EL2 are incident. The second prism 92 is a prism on the side from which the projected luminous flux EL2 that transmits the polarized light separation surface 93 is emitted. An illumination luminous flux EL1 and a projection luminous flux EL2 from the first prism 91 to the second prism 92 are incident on the polarization separation surface 93. [ The polarized light separating surface 93 reflects the illumination luminous flux EL1 of S polarized light (linearly polarized light) and transmits the projected luminous flux EL2 of P polarized light (linearly polarized light).

The quarter wave plate 41 is disposed between the polarizing beam splitter PBS and the mask M. [ The 1/4 wave plate 41 converts the illumination luminous flux EL1 reflected by the polarization beam splitter PBS from linearly polarized light (S polarized light) to circularly polarized light. The circularly polarized illumination luminous flux EL1 is irradiated to the mask M. [ The 1/4 wave plate 41 converts the projected luminous flux EL2 of the circularly polarized light reflected by the mask M into linearly polarized light (P polarized light).

Next, a plurality of projection areas PA1 to PA6 to be projected and exposed by the projection optical system PL will be described. 3, a plurality of projection areas PA1 to PA6 on the substrate P are arranged so as to correspond to a plurality of illumination areas IR1 to IR6 on the mask M. [ That is, the plurality of projection areas PA1 to PA6 on the substrate P are arranged in two rows in the conveying direction with the center plane CL therebetween, and on the substrate P on the upstream side in the conveying direction, The first projection area PA1, the third projection area PA3 and the fifth projection area PA5 are arranged on the substrate P on the downstream side in the transport direction, and the second projection area PA2, the fourth projection area PA3, The projection area PA4 and the sixth projection area PA6 are arranged.

Each projection area PA1 to PA6 is an elongated trapezoidal area having a short side extending in the width direction (Y direction) of the substrate P and a long side. At this time, each of the projection areas PA1 to PA6 in the trapezoidal shape is located on the side of the center plane CL with its short side being located on the outer side. The odd-numbered first projection area PA1, the third projection area PA3 and the fifth projection area PA5 are arranged at a predetermined interval in the width direction. In addition, the even-numbered second projection area PA2, the fourth projection area PA4, and the sixth projection area PA6 are arranged at a predetermined interval in the width direction. At this time, the second projection area PA2 is disposed between the first projection area PA1 and the third projection area PA3 in the axial direction. Similarly, the third projection area PA3 is disposed between the second projection area PA2 and the fourth projection area PA4 in the axial direction. The fourth projection area PA4 is disposed between the third projection area PA3 and the fifth projection area PA5. The fifth projection area PA5 is disposed between the fourth projection area PA4 and the sixth projection area PA6. The projection areas PA1 to PA6 are arranged such that the triangular portions of the oblique projection portions of the trapezoidal projection area PA adjacent to each other are overlapped with each other as viewed from the conveying direction of the substrate P as in each of the illumination areas IR1 to IR6 Overlap). At this time, the projection area PA has such a shape that the exposure amount in the overlapping areas of the adjacent projection areas PA is substantially equal to the exposure amount in the non-overlapping areas. The first to sixth projection areas PA1 to PA6 are arranged so as to cover the entire width of the exposure area A7 exposed on the substrate P in the Y direction.

2, the circumferential length from the center point of the illumination area IR1 (and IR3, IR5) on the mask M to the center point of the illumination area IR2 (and IR4, IR6), as viewed from the XZ plane, And the peripheral length from the center point of the projection area PA1 (and PA3, PA5) on the substrate P along the support surface P2 to the center point of the second projection area PA2 (and PA4, PA6) .

Six projection optical systems PL in the first embodiment are provided according to the six projection areas PA1 to PA6. A plurality of projected luminous fluxes EL2 reflected by the mask patterns located in the corresponding illumination areas IR1 to IR6 respectively enter the projection optical systems PL1 to PL6. Each of the projection optical systems PL1 to PL6 guides each of the projected luminous fluxes EL2 reflected by the mask M to the respective projection areas PA1 to PA6. That is, the first projection optical system PL1 guides the projected luminous flux EL2 from the first illumination area IR1 to the first projection area PA1, and similarly, the second to sixth projection optical systems PL2 to PL6 ) Guides the respective projected luminous fluxes EL2 from the second to sixth illumination areas IR2 to IR6 to the second to sixth projection areas PA2 to PA6.

The plurality of projection optical systems PL1 to PL6 are arranged in two rows in the circumferential direction of the mask M with the center plane CL therebetween. The plurality of projection optical systems PL1 to PL6 are arranged on the side where the first, third and fifth projection areas PA1, PA3 and PA5 are disposed (left side in Fig. 2) with the center plane CL therebetween, A first projection optical system PL1, a third projection optical system PL3, and a fifth projection optical system PL5. The first projection optical system PL1, the third projection optical system PL3, and the fifth projection optical system PL5 are arranged at a predetermined interval in the Y direction. The plurality of illumination optical systems IL1 to IL6 are arranged on the side on which the second, fourth and sixth projection areas PA2, PA4 and PA6 are arranged (the right side in Fig. 2) A second projection optical system PL2, a fourth projection optical system PL4, and a sixth projection optical system PL6 are arranged. The second projection optical system PL2, the fourth projection optical system PL4, and the sixth projection optical system PL6 are arranged at a predetermined interval in the Y direction. At this time, the second projection optical system PL2 is disposed between the first projection optical system PL1 and the third projection optical system PL3 in the axial direction. Similarly, the third projection optical system PL3 is disposed between the second projection optical system PL2 and the fourth projection optical system PL4 in the axial direction. The fourth projection optical system PL4 is disposed between the third projection optical system PL3 and the fifth projection optical system PL5. The fifth projection optical system PL5 is disposed between the fourth projection optical system PL4 and the sixth projection optical system PL6. The second projection optical system PL2, the fourth projection optical system PL4 and the sixth projection optical system PL6 constitute a first projection optical system PL1, a third projection optical system PL3 and a fifth projection optical system PL5, Are arranged symmetrically with respect to the center plane CL as viewed from the Y direction.

The projection optical systems PL1 to PL6 will be described with reference to Fig. Since each of the projection optical systems PL1 to PL6 has the same configuration, the first projection optical system PL1 (hereinafter, simply referred to as a 'projection optical system PL') will be described as an example.

The projection optical system PL enters the projection luminous flux EL2 reflected from the illumination area IR (the first illumination area IR1) of the mask surface P1 of the mask M, Thereby forming an intermediate image of the pattern appearing on the mask surface P1. The projected luminous flux EL2 from the mask surface P1 to the intermediate top surface P7 is referred to as a first projected luminous flux EL2a. The intermediate image formed on the intermediate upper surface P7 becomes an inverted image which is 180 degrees point symmetrical with respect to the image of the mask pattern of the illumination area IR.

The projection optical system PL forms a projected image by re-projecting the projected luminous flux EL2 emitted from the intermediate top plane P7 in the projection area PA of the projected image plane (projection image plane) of the substrate P. [ The projected luminous flux EL2 from the intermediate top surface P7 to the projection top surface of the substrate P is referred to as a second projected luminous flux EL2b. The projected image is formed on the intermediate image of the intermediate image plane P7 with respect to the image of the mask pattern of the illumination region IR in an inverted phase that is 180 degrees point symmetrical, in other words, (Erect image). The projection optical system PL includes the quarter wave plate 41, the polarizing beam splitter PBS, the projection optical system PL, and the projection optical system PL in this order from the incident side of the projected luminous flux EL2 from the mask M. [ Module (PLM).

The 1/4 wave plate 41 and the polarizing beam splitter PBS are also used as the illumination optical system IL. In other words, the illumination optical system IL and the projection optical system PL share a 1/4 wave plate 41 and a polarization beam splitter (PBS).

The first projected luminous flux EL2a reflected by the illumination area IR becomes a telecentric luminous flux directed to the outside in the radial direction of the first axis AX1 of the mask holding drum 21, (PL). The first projecting luminous flux EL2a of the circularly polarized light reflected by the illumination area IR is converted into circularly polarized light (P polarized light) by the 1/4 wave plate 41 when it is incident on the projection optical system PL And enters the polarizing beam splitter PBS. The first projection light flux EL2a incident on the polarization beam splitter PBS is transmitted through the polarization beam splitter PBS and is incident on the projection optical module PLM.

4, the projection optical module PLM includes a partial optical system 61 that forms an intermediate image on the intermediate image plane P7 and images a projected image on the substrate P, (Light guiding optical system) 62 for making the first projection light beam EL2a and the second projection light beam EL2b enter the intermediate image plane P7 on which the intermediate image is formed and a projection optical system 63). The projection optical module PLM includes a focus correction optical member 64, an image shift optical member 65, a magnification correction optical member 66, a rotation correction mechanism 67, And an adjusting mechanism (68).

The partial optical system 61 and the reflective optical system 62 are, for example, a telecentric catadioptric system with a Dyson system. The partial optical system 61 has its optical axis (hereinafter referred to as "second optical axis BX2") substantially orthogonal to the center plane CL. The partial optical system 61 includes a first lens group 71 and a first concave mirror (reflective optical member) 72. The first lens group 71 has a plurality of lens members including a refraction lens (lens member) 71a provided on the side of the center plane CL and the optical axis of the plurality of lens members is a second optical axis BX2, As shown in Fig. The first concave mirror 72 is configured so that a plurality of point light sources generated by the fly eye lens 52 are moved from the fly eye lens 52 through the illumination field stop 55 to the first concave mirror 72 (The pupil plane) that forms an image by various types of lenses.

The reflecting optical system 62 includes a first deflecting member (a first optical member and a first reflecting member) 76, a second deflecting member (a second optical member and a third reflecting member) 77, (A third optical member and a fourth reflecting member) 78, and a fourth biasing member (a fourth optical member and a second reflecting member) 79. The first biasing member 76 is a reflecting mirror having a first reflecting surface P3. The first reflecting surface P3 reflects the first projected luminous flux EL2a from the polarizing beam splitter PBS and reflects the reflected first projected luminous flux EL2a to the refraction lens 71a of the first lens group 71 ). The second biasing member 77 is a reflecting mirror having a second reflecting surface P4. The second reflecting surface P4 reflects the first projected luminous flux EL2a emitted from the refraction lens 71a and reflects the reflected first projected luminous flux EL2a to the projection visual field stop 63 provided on the intermediate top surface P7 ). The third deflecting member 78 is a reflecting mirror having a third reflecting surface P5. The third reflection surface P5 reflects the second projected light flux EL2b from the projection field stop 63 and reflects the reflected second projected light flux EL2b onto the refraction lens 71a of the first lens group 71 ). The fourth deflecting member 79 is a reflecting mirror having a fourth reflecting surface P6. The fourth reflecting surface P6 reflects the second projected luminous flux EL2b emitted from the refraction lens 71a and makes the reflected second luminous flux EL2b enter the substrate P. [ The second deflecting member 77 and the third deflecting member 78 are arranged in such a manner that the first projecting luminous flux EL2a from the partial optical system 61 is reflected by the flap reflecting mirror 61 so as to be bent toward the partial optical system 61, . The respective reflective surfaces P3 to P6 of the first to fourth deflecting members 76, 77, 78 and 79 are planes parallel to the Y axis in FIG. 4, and are inclined at a predetermined angle within the XZ plane.

The projection field stop 63 has an opening that defines the shape of the projection area PA. That is, the shape of the opening of the projection field stop 63 defines the shape of the projection area PA.

The first projection light flux EL2a from the polarizing beam splitter PBS passes through the optical member 65 for image shift and is reflected by the first reflecting surface P3 of the first deflecting member 76 . The first projection light flux EL2a reflected by the first reflection surface P3 is incident on the first lens group 71 and passes through a plurality of lens members including the refraction lens 71a, And enters the face mirror 72. At this time, the first projected flux of light EL2a passes through the field of view on the upper side in the + Z direction from the second optical axis BX2 of the refraction lens 71a in the first lens group 71. The first projection luminous flux EL2a incident on the first concave mirror 72 is reflected by the first concave mirror 72. [ The first projected luminous flux EL2a reflected by the first concave mirror 72 enters the first lens group 71 and passes through a plurality of lens members including the refractive lens 71a, And emerges from the lens group 71. At this time, the first projected flux of light EL2a passes through the field of view on the lower side in the -Z direction from the second optical axis BX2 of the refraction lens 71a in the first lens group 71. [ The first projecting luminous flux EL2a emitted from the first lens group 71 is reflected by the second reflecting surface P4 of the second deflecting member 77. [ The first projection luminous flux EL2a reflected by the second reflection surface P4 is incident on the projection field stop 63. [ The first projection luminous flux EL2a incident on the projection field stop 63 forms an intermediate image which is an inverted image of the mask pattern in the illumination area IR.

The second projection luminous flux EL2b from the projection field stop 63 is reflected by the third reflection surface P5 of the third biasing member 78. [ The second projection luminous flux EL2b reflected by the third reflection surface P5 is incident again on the first lens group 71 and passes through the plurality of lens members including the refraction lens 71a, And enters the concave mirror (72). At this time, the second projecting luminous flux EL2b is the upper side in the + Z direction from the second optical axis BX2 of the refraction lens 71a in the first lens group 71, Passes through the viewing area between the incident side and the emitting side of the display device. The second projection luminous flux EL2b incident on the first concave mirror 72 is reflected by the first concave mirror 72. [ The second projected luminous flux EL2b reflected by the first concave mirror 72 enters the first lens group 71 and passes through a plurality of lens members including the refractive lens 71a, And emerges from the lens group 71. At this time, the second projection luminous flux EL2b is the lower side in the -Z direction from the second optical axis BX2 of the refraction lens 71a in the first lens group 71, and the first projection luminous flux EL2a Through the viewing area between the incident side and the emitting side. The second projection luminous flux EL2b emitted from the first lens group 71 is reflected by the fourth reflection surface P6 of the fourth biasing member 79. [ The second projection luminous flux EL2b reflected by the fourth reflection surface P6 passes through the focus correction optical member 64 and the magnification correction optical member 66 and is projected onto the projection area PA on the substrate P. [ do. The second projected luminous flux EL2b projected onto the projection area PA forms a projected image whose phase is the mask pattern in the illumination area IR. At this time, the image of the mask pattern in the illumination area IR is projected in the projection area PA in the same magnification (x 1).

Here, a view area of the projection optical module PLM constituted by the first lens group 71 including the refraction lens 71a and the first concave mirror 72 is briefly described with reference to FIG. 5 do. 5 shows a state in which a circular imaging full field of view (reference plane) CIF by the projection optical module PLM is developed (expanded) on the YZ plane in Fig. 5, and a rectangular shape An intermediate image Img1 which forms an image on the projection field stop 63 of the intermediate image plane P7 and a intermediate image Img1 which is formed in a trapezoidal shape by the projection field stop 63 of the intermediate image plane P7. And the trapezoidal projection area PA on the substrate P are set to be elongated in the Y-axis direction, and are separately arranged in the Z-axis direction.

First, the center of the rectangular illumination area IR on the mask M is shifted in the + Z direction from the center point (the optical axis BX2 passes through) of the solidified upper field of view CIF so that the image height value k1 becomes eccentric And is set at one position (first position). Therefore, the intermediate image Img1 formed on the projection field stop 63 (intermediate intermediate image plane P7) by the first imaging light path (first projection light beam EL2a) passing through the projection optical module PLM, The position of the elevation value k1 which is eccentric in the -Z direction from the central point of the solidification upper visual field CIF in the state in which the illumination region IR is inverted up and down (Z direction) and left and right (Second position).

The intermediate image Img2 is obtained by limiting the intermediate image Img1 in the trapezoidal opening of the projection field stop 63. [ Since the optical path is bent by the two deflecting members 77 and 78 disposed on the front and rear sides of the projection field stop 63, the intermediate image Img2 is shifted from the central point of the still image CIF by + Z (Third position) of the image height value k2 (k2 &lt; k1). In addition, the limited intermediate image Img2 in the projection field stop 63 is formed on the substrate P by the second imaging light path (second projection light beam EL2b) passing through the projection optical module PLM In the projection area PA.

The center point of the image re-formed in the projection area PA is located at the height value k2 (k2 &lt; k1) in the -Z direction from the central point of the solidification visual field CIF in the YZ plane. The image reconstructed in the projection area PA is formed in the mask pattern in the illumination area IR in the same direction (x1) without inversion in the lateral direction (Y direction).

As described above, in the present embodiment, the illumination region IR is limited to the rectangular or trapezoidal shape that is long and narrow so that the imaging light flux from the mask pattern can be spatially separated in the circular imaging field CIF, A double pass imaging optical path was formed in the projection optical module PLM by the four deflecting members 76, 77, 78 and 79 by a normal total reflection mirror. Therefore, the pattern on the mask M can be projected on the substrate P at least in the Y-axis direction (the joining direction of each projection image by the projection optical modules PL1 to PL6) have.

As described above, the first deflecting member 76, the second deflecting member 77, the third deflecting member 78, and the fourth deflecting member 79 are arranged so that the field of view of the incidence side of the first projecting luminous flux EL2a (Second incident visual field) of the second projection luminous flux EL2b and the second projection luminous flux EL2b of the second projection luminous flux EL1 (Second output visual field) of the light-emitting element EL2b is separated from the reflection optical system 62. [ Therefore, since the reflecting optical system 62 has a configuration in which leakage light is hardly generated when the first projection luminous flux EL2a is guided, the reflecting optical system 62 can reduce the light amount of the leakage light projected on the substrate P to Thereby functioning as a light amount reducing section to be reduced. The leakage light may be, for example, scattered light generated by scattering the first projected luminous flux EL2a or split light generated by the separation of the first projected luminous flux EL2a, or the first projected luminous flux EL2a, Or a part of the reflected light generated by the reflection.

Here, the reflecting optical system 62 has, in the Z direction, a first deflecting member 76, a third deflecting member 78, a fourth deflecting member 79, and a second deflecting member 77 Lt; / RTI &gt; The first projection light flux EL2a incident on the refraction lens 71a of the first lens group 71 is incident on the side closer to the illumination region IR (upper side of the refraction lens 71a). The second projection luminous flux EL2b emitted from the refraction lens 71a of the first lens group 71 is emitted from the side closer to the projection area PA (the lower side of the refraction lens 71a). Therefore, the distance between the illumination area IR and the first deflecting member 76 can be shortened, and the distance between the projection area PA and the fourth deflecting member 79 can be shortened , And the projection optical system PL can be made compact. 4, the third deflecting member 78 is disposed between the first deflecting member 76 and the fourth deflecting member 79 with respect to the direction along the full-blowup upper field of view CIF (Z direction) Respectively. The positions of the first biasing member 76 and the fourth biasing member 79 and the positions of the second biasing member 77 and the third biasing member 78 are the same for the directions of the second optical axis BX2 , It becomes a different position.

The reflection optical system 62 has four fields of view (IR, Img1, Img2, PA shown in FIG. 5) of the first incident field, the first field of view, the second field of view, and the second field of view , It is preferable to set the size of the projection area PA to a predetermined size so as not to overlap the projected luminous flux EL2 in the four fields of view. That is, the projection area PA is formed in such a manner that the length in the scanning direction of the substrate P and the length in the width direction of the substrate P orthogonal to the scanning direction satisfy the relationship of the length / . Therefore, the reflecting optical system 62 can separate the projected luminous flux EL2 and guide it to the partial optical system 61 without overlapping the projected luminous flux EL2 in the four visual fields.

In addition, the first deflecting member 76, the second deflecting member 77, the third deflecting member 78, and the fourth deflecting member 79 are arranged in a slit-like first incident view, a first outgoing view, (Corresponding to IR, Img1, Img2, and PA shown in FIG. 5) of the first exit visual field, the second incident visual field, and the second exit visual field, Are arranged separately from each other with respect to the width direction (Z direction).

The focus correcting optical member 64 is disposed between the fourth deflecting member 79 and the substrate P. [ The focus correction optical member 64 adjusts the focus state of the image of the mask pattern projected onto the substrate P. [ The focus correction optical member 64 is, for example, two prism wedge-shaped prisms which are opposed to each other so as to form a transparent flat plate as a whole with the prisms in the opposite direction (in the direction opposite to the X direction in Fig. 4). The pair of prisms are slid in the slope direction without changing the interval between the surfaces facing each other, whereby the thickness of the parallel plate is made variable. As a result, the effective optical path length of the partial optical system 61 is finely adjusted, and the focus state of the image of the mask pattern formed in the intermediate top plane P7 and the projection area PA is finely adjusted.

The phase shift optical member 65 is disposed between the polarizing beam splitter PBS and the first biasing member 76. [ The phase shift optical member 65 adjusts the image of the mask pattern projected on the substrate P so as to be movable in the image plane. The phase shift optical member 65 is composed of a transparent parallel plate glass which can be tilted in the XZ plane of Fig. 4 and a transparent parallel plate glass which is tiltable in the YZ plane of Fig. The image of the mask pattern formed in the intermediate top plane P7 and the projection area PA can be slightly shifted in the X and Y directions by adjusting the angular amounts of the two parallel flat glass plates.

The magnification correction optical member 66 is disposed between the fourth deflecting member 79 and the substrate P. [ The optical element 66 for magnification correction is composed of, for example, a concave lens, a convex lens and a concave lens arranged coaxially at predetermined intervals, the front and rear concave lenses being fixed, Direction. Thereby, the image of the mask pattern formed in the projection area PA is isotropically enlarged or reduced by a small amount while maintaining the telecentric imaging state. The optical axes of the three lens groups constituting the magnification-correcting optical member 66 are inclined in the XZ plane so as to be parallel to the principal ray of the projected luminous flux EL2 (the second projected luminous flux EL2b).

The rotation correction mechanism 67 slightly rotates the second biasing member 77 about an axis parallel (or perpendicular) to the second optical axis BX2 by, for example, an actuator (not shown). The rotation correcting mechanism 67 can rotate the second deflecting member 77 to slightly rotate the image of the mask pattern formed on the intermediate top face P7 within the plane P7 have.

The polarization adjusting mechanism 68 adjusts the polarization direction by rotating the quarter wave plate 41 around an axis orthogonal to the plate surface by, for example, an actuator (not shown). The polarization adjusting mechanism 68 can adjust the illuminance of the projected luminous flux EL2 (second projected luminous flux EL2b) projected onto the projection area PA by rotating the 1/4 wave plate 41 .

In the projection optical system PL constructed as described above, the first projected flux of light EL2a from the mask M is changed from the illumination area IR to the normal direction of the mask plane P1 (centering on the first axis AX1) And enters the reflective optical system 62 through the 1/4 wave plate 41, the polarization beam splitter PBS, and the phase shift optical member 65. The quarter- The first projection light flux EL2a incident on the reflection optical system 62 is reflected by the first reflection surface P3 of the first deflecting member 76 of the reflection optical system 62 and is incident on the partial optical system 61 . The first projection luminous flux EL2a incident on the partial optical system 61 passes through the first lens group 71 of the partial optical system 61 and is reflected by the first concave mirror 72. [ The first projected luminous flux EL2a reflected by the first concave mirror 72 again passes through the first lens group 71 and exits from the partial optical system 61. [ The first projection light flux EL2a emitted from the partial optical system 61 is reflected by the second reflection surface P4 of the second deflecting member 77 of the reflection optical system 62 and enters the projection field stop 63 do. The second projection luminous flux EL2b having passed through the projection field stop 63 is reflected by the third reflection surface P5 of the third deflecting member 78 of the reflection optical system 62 and is reflected again onto the partial optical system 61 I will join. The second projected luminous flux EL2b incident on the partial optical system 61 passes through the first lens group 71 of the partial optical system 61 and is reflected by the first concave mirror 72. [ The second projection luminous flux EL2b reflected by the first concave mirror 72 again passes through the first lens group 71 and exits from the partial optical system 61. [ The second projection luminous flux EL2b emitted from the partial optical system 61 is reflected by the fourth reflection surface P6 of the fourth deflecting member 79 of the reflection optical system 62 and is reflected by the focus correction optical member 64 and And enters the optical element 66 for magnification correction. The second projection luminous flux EL2b emitted from the magnification correction optical member 66 is incident on the projection area PA on the substrate P and the image of the mask pattern appearing in the illumination area IR is projected onto the projection area PA, (X 1) to the projection optical system PA.

<Device Manufacturing Method>

Next, a device manufacturing method will be described with reference to Fig. 6 is a flowchart showing a device manufacturing method according to the first embodiment.

In the device manufacturing method shown in Fig. 6, the function and performance of the display panel is first performed by self-luminous elements such as organic EL, for example, and necessary circuit patterns and wiring patterns are designed by CAD or the like (step S201). Next, on the basis of a pattern for each of various layers designed by a CAD or the like, a mask M of necessary layers is produced (step S202). A supply roll FR1 on which a flexible substrate P (a resin film, a metal thin film, a plastic or the like) to be a base material of the display panel is wound is prepared (step S203). The roll-shaped substrate P prepared in this step S203 may be obtained by modifying the surface of the substrate P if necessary, by using a base layer (for example, fine irregularities by an imprint method) Or a laminate of a photosensitive film or a transparent film (insulating material) laminated in advance.

Next, a backplane layer constituted by an electrode or wiring, an insulating film, a TFT (thin film semiconductor) or the like constituting the display panel device is formed on the substrate P, and an organic EL Emitting layer (display pixel portion) by the self-luminous element of the light-emitting element is formed (step S204). This step S204 includes a conventional photolithography process for exposing the photoresist layer using the exposure apparatus U3 described in each of the above embodiments, but it is also possible to use a photoresist layer on which a photosensitive silane coupling material ), Patterning the photosensitive catalyst layer and exposing the pattern (wiring, electrode, etc.) of the metal film according to the electroless plating method Or a printing process for drawing a pattern by a conductive ink containing silver nanoparticles or the like.

Next, for each display panel device which is continuously manufactured on a long substrate P in a roll manner, the substrate P is diced or a protective film (inner environmental barrier layer ) Or a color filter sheet or the like are bonded to each other to assemble the device (step S205). Next, an inspection process is performed to determine whether the display panel device functions normally or satisfies the desired performance or characteristics (step S206). In this manner, a display panel (flexible display) can be manufactured.

As described above, in the first embodiment, the first incident view, the first outgoing view, the second incident view, and the second outgoing view are obtained by the reflective optical system 62 cooperating with the projection optical system PL (projection optical module PLM) Since the field of view can be separated from each other, the generation of the leakage light from the first projecting luminous flux EL2a can be suppressed. Therefore, the reflective optical system 62 can be configured to prevent the leakage light from being projected onto the substrate P. Therefore, it is possible to prevent deterioration of the quality of an image projected and projected on the substrate P can do.

In the first embodiment, the projection area PA can be set to be 1/4 in the length direction / width direction in the scanning direction. Therefore, the first projection luminous flux EL2a in the reflection optical system 62 and the The first incident view, the first incident view, the second incident view, and the second exit view can be separated from each other without overlapping the two projected luminous fluxes EL2b.

In the first embodiment, since the illumination luminous flux EL1 can be used as the laser light, the illuminance of the second projected luminous flux EL2b projected onto the projection area PA can be preferably secured.

In the first embodiment, the first projection luminous flux EL2a and the second projection luminous flux EL2b incident on the refraction lens 71a are made to be the upper side of the refraction lens 71a, The first projection light flux EL2a and the second projection light flux EL2b on the lower side of the refraction lens 71a. However, if the first incident field of view, the first exit field of view, the second incident field of view, and the second exit field of view can be separated from each other, the first projected luminous flux EL2a and the second projected luminous flux EL2b Is not particularly limited.

[Second Embodiment]

Next, the exposure apparatus U3 of the second embodiment will be described with reference to Fig. In the second embodiment, only parts different from those of the first embodiment are described so as to avoid the description overlapping with the first embodiment, and the same constituent elements as those of the first embodiment are denoted by the same reference numerals as those of the first embodiment . 7 is a diagram showing the configuration of an illumination optical system and a projection optical system of the exposure apparatus according to the second embodiment. The exposure apparatus U3 of the first embodiment makes visibility separation by the reflective optical system 62 of the projection optical system PL difficult to generate leakage light. The exposure apparatus U3 according to the second embodiment is configured so that the imaging position of the projected image formed by the projected luminous flux EL2 and the defective image formed by the leakage light in the reflective optical system 100 of the projection optical system PL, Position in the scanning direction of the substrate (P).

In the exposure apparatus U3 according to the second embodiment, the projection optical system PL includes, in order from the incident side of the projected luminous flux EL2 from the mask M, a quarter wave plate 41, (PBS), and a projection optical module PLM. The projection optical module PLM includes a partial optical system 61, a reflective optical system (light optical system) 100, and a projection field stop 63. The projection optical module PLM includes a focus correction optical member 64, a phase shift optical member 65, a magnification correction optical member 66, a rotation correction mechanism 67, And an adjusting mechanism 68. It is also possible to use the quarter wave plate 41, the polarizing beam splitter PBS, the partial optical system 61, the projection field stop 63, the focus correction optical member 64, the phase shift optical member 65, Since the optical member 66, the rotation correction mechanism 67, and the polarization adjustment mechanism 68 have the same configuration, their explanation is omitted.

The reflecting optical system 100 includes a first polarizing beam splitter PBS1, a second polarizing beam splitter PBS2, a half-wave plate 104, (Second optical member and a fourth reflecting portion) 106, a first light shielding plate 111, and a second light shielding plate 111. [ (112). The first polarized beam splitter PBS1 has a first polarized light separating surface P10. The first polarized light separating surface P10 reflects the first projected luminous flux EL2a from the polarizing beam splitter PBS1 and reflects the reflected first projected luminous flux EL2a to the refracting lens of the first lens group 71 71a. The first polarized light separating surface P10 transmits the second projected luminous flux EL2b from the intermediate top plane P7 and transmits the second projected luminous flux EL2b transmitted through the first lens group 71, And enters the lens 71a. The second polarized beam splitter PBS2 has a second polarized light separation surface P11. The second polarized light separating surface P11 transmits the first projected luminous flux EL2a from the refraction lens 71a of the first lens group 71 and transmits the first projected luminous flux EL2a through the first deflecting member 71a, (105). The second polarized light separating surface P11 reflects the second projected luminous flux EL2b from the refraction lens 71a of the first lens group 71 and reflects the reflected second luminous flux EL2b onto the substrate P). The 1/2 wave plate 104 converts the first projected luminous flux EL2a of S polarized light reflected by the first polarized beam splitter PBS1 into a first projected luminous flux EL2a of P polarized light. The 1/2 wave plate 104 converts the P-polarized second projected luminous flux EL2b transmitted through the first polarized beam splitter PBS1 into the S-polarized second projected luminous flux EL2b. The first biasing member 105 is a reflecting mirror having a first reflecting surface P12. The first reflecting surface P12 reflects the first projected luminous flux EL2a transmitted through the second polarized beam splitter PBS2 and reflects the reflected first projected luminous flux EL2a through the projection view provided on the intermediate top surface P7 And enters the diaphragm 63. The second deflecting member 106 is a reflecting mirror having a second reflecting surface P13. The second reflecting surface P13 reflects the second projected light flux EL2b from the projection field stop 63 and makes the reflected second projected light flux EL2b enter the first polarized beam splitter PBS1. The first deflecting member 105 and the second deflecting member 106 are arranged so that the first projecting luminous flux EL2a from the partial optical system 61 is reflected by the partial optical system 61 so as to be bent toward the partial optical system 61, .

Since the first polarizing beam splitter PBS1 is provided in the reflecting optical system 100, the first polarizing beam splitter PBS1 reflects the P-polarized projected light flux transmitted through the polarizing beam splitter PBS, A 1/2 wave plate 107 is provided between the polarizing beam splitter PBS and the first polarizing beam splitter PBS1.

The first light blocking plate 111 is provided between the second polarization beam splitter PBS2 and the substrate P. [ The first light blocking plate 111 is formed so that a part of the first projected luminous flux EL2a incident on the second polarizing beam splitter PBS2 does not transmit the second polarized light separation surface P11 of the second polarizing beam splitter PBS2 (Leaked light) reflected by the light source is shielded from light.

The second light blocking plate 112 is provided between the first polarizing beam splitter PBS1 and the second polarizing beam splitter PBS2. The second light blocking plate 112 shields the leakage light leaking from the first polarization beam splitter PBS1 to the second polarization beam splitter PBS2.

The first projecting luminous flux EL2a of P polarized light from the polarizing beam splitter PBS passes through the phase shift optical member 65 and is transmitted through the 1/2 wave plate 107. [ The first projected luminous flux EL2a transmitted through the 1/2 wave plate 107 is converted into S polarized light and then enters the first polarized beam splitter PBS1. The S polarized first projected luminous flux EL2a incident on the first polarized beam splitter PBS1 is reflected by the first polarized light separation surface P10 of the first polarized beam splitter PBS1. The first projecting luminous flux EL2a of the S polarized light reflected by the first polarized light separating surface P10 is transmitted through the 1/2 wave plate 104. [ The first projected luminous flux EL2a transmitted through the 1/2 wave plate 104 is converted into P polarized light and then enters the first lens group 71. [ The first projected luminous flux EL2a incident on the first lens group 71 is incident on the first concave mirror 72 after passing through a plurality of lens members including the refractive lens 71a. At this time, the first projected luminous flux EL2a passes through the first lens group 71 through the visual field area (first incident visual field) on the upper side of the refractive lens 71a. The first projection luminous flux EL2a incident on the first concave mirror 72 is reflected by the first concave mirror 72. [ The first projected luminous flux EL2a reflected by the first concave mirror 72 enters the first lens group 71 and passes through a plurality of lens members including the refractive lens 71a, And emerges from the lens group 71. At this time, the first projected flux of light EL2a passes through the first lens group 71 through the field-of-view region (first output field of view) on the lower side of the refraction lens 71a. The first projecting luminous flux EL2a emitted from the first lens group 71 is incident on the second polarizing beam splitter PBS2. The first projected luminous flux EL2a of P polarized light incident on the second polarized beam splitter PBS2 passes through the second polarized light separation surface P11. The first projecting luminous flux EL2a transmitted through the second polarized light separating surface P11 is incident on the first deflecting member 105 and is reflected by the first reflecting surface P12 of the first deflecting member 105. [ The first projection luminous flux EL2a reflected by the first reflection surface P12 is incident on the projection field stop 63. [ The first projection luminous flux EL2a incident on the projection field stop 63 forms an intermediate image which is an inverted image of the mask pattern in the illumination area IR.

The second projected light flux EL2b from the projection field stop 63 is reflected by the second reflection surface P13 of the second deflecting member 106. [ The second projected luminous flux EL2b reflected by the second reflection surface P13 is incident on the first polarized beam splitter PBS1. The second projected luminous flux EL2b of P polarized light incident on the first polarized beam splitter PBS1 transmits through the first polarized light separation surface P10. The second projected luminous flux EL2b of the P polarized light transmitted through the first polarized light separation surface P10 is transmitted through the 1/2 wave plate 104. [ The second projected luminous flux EL2b transmitted through the 1/2 wave plate 104 is converted into S polarized light and then enters the first lens group 71. [ The second projected luminous flux EL2b incident on the first lens group 71 is incident on the first concave mirror 72 after passing through the plurality of lens members including the refractive lens 71a. At this time, the second projected flux of light EL2b passes through the first lens group 71 through the field of view (second incident field of view) on the upper side of the refraction lens 71a. The second projection luminous flux EL2b incident on the first concave mirror 72 is reflected by the first concave mirror 72. [ The second projected luminous flux EL2b reflected by the first concave mirror 72 enters the first lens group 71 and passes through a plurality of lens members including the refractive lens 71a, And emerges from the lens group 71. At this time, the second projected flux of light EL2b passes through the field of view (second outgoing field of view) on the lower side of the refraction lens 71a in the first lens group 71. The second projecting luminous flux EL2b emitted from the first lens group 71 is incident on the second polarizing beam splitter PBS2. The S-polarized second projected light flux EL2b incident on the second polarized beam splitter PBS2 is reflected by the second polarized light separation surface P11. The second projected luminous flux EL2b reflected by the second polarized light separation surface P11 passes through the focus correction optical member 64 and the magnification correction optical member 66 to be projected onto the projection area PA on the substrate P Projected. The second projected luminous flux EL2b projected onto the projection area PA forms a projected image whose phase is the mask pattern in the illumination area IR. At this time, the image of the mask pattern in the illumination area IR is projected in the projection area PA in the same magnification (x 1).

Here, the first polarizing beam splitter PBS1, the second polarizing beam splitter PBS2, the first polarizing beam splitter PBS2, the first polarizing beam splitter PBS2, the first polarizing beam splitter PBS2, the first polarizing beam splitter PBS2, The imaging position of the projected image formed by the projected luminous flux EL2b and the defective position of the defective image formed by the leakage light that is a part of the first projected luminous flux EL2a reflected by the second polarizing beam splitter PBS2, P in the scanning direction. More specifically, with respect to the first polarized light separation surface P10 of the first polarized beam splitter PBS1, the incident position of the first projected luminous flux EL2a is different from the incident position of the second projected luminous flux EL2b, The first polarizing beam splitter PBS1, the second polarizing beam splitter PBS2, the first deflecting member 105, and the second deflecting member 106 are disposed. With this arrangement, the incident position of the second projected luminous flux EL2b and the incident position of the first projected luminous flux EL2a are made different from each other on the second polarized light separation surface P11 of the second polarized light beam splitter PBS2 . Therefore, the image forming position of the projection image of the second projection luminous flux EL2b reflected by the second polarization splitting surface P11 and the image forming position of the first projection luminous flux EL2a reflected by the second polarization separation surface P11 The imaging position on the defective of the leaked light can be made different in the scanning direction of the substrate P. [

In this case, the first light blocking plate 111 is provided at a position for shielding the leakage light directed from the second polarizing beam splitter PBS2 to the substrate P. [ Therefore, the first light blocking plate 111 allows the projection of the second projection luminous flux EL2b from the second polarization beam splitter PBS2 to the substrate P onto the substrate P, while allowing the second polarizing beam splitter (PBS2) to the substrate (P).

As described above, the first polarizing beam splitter PBS1, the second polarizing beam splitter PBS2, the first deflecting member 105, the second deflecting member 106, and the first light blocking plate 111 are disposed on the substrate P In the scanning direction, the imaging position of the projected image is made different from the imaging position of the defective image, and the first light shielding plate 111 shields the leakage light. Therefore, the reflecting optical system 100 functions as a light amount reducing unit for reducing the light amount of the leakage light projected on the substrate P.

The incident position of the first projecting luminous flux EL2a on the first polarized light separation surface P10 of the first polarized beam splitter PBS1 and the incident position of the second polarized light separation surface P11 of the second polarized light beam splitter PBS2, The incident position of the first projecting luminous flux EL2a at the second optical axis BX2 is a symmetrical position with the second optical axis BX2 therebetween. The incident position of the second projected luminous flux EL2b on the first polarized light separation surface P10 of the first polarized beam splitter PBS1 and the incident position of the second polarized light separation surface P11 of the second polarized light beam splitter PBS2, The incident position of the second projection luminous flux EL2b at the second optical axis BX2 becomes a symmetrical position with the second optical axis BX2 therebetween. In other words, the incident position of the first projected luminous flux EL2a on the first polarized light separation surface P10 of the first polarized beam splitter PBS1 and the incident position of the second polarized light separation surface P11 of the second polarized light beam splitter PBS2 , The incident position of the second projecting luminous flux EL2b becomes asymmetrical with respect to the second optical axis BX2.

The incident position of the first projected luminous flux EL2a on the first polarized light separation surface P10 and the incident position of the second projected luminous flux EL2b on the second polarized light separation surface P11 are located on the second optical axis BX2, The projection area PA is shifted to the X direction (second optical axis direction) with respect to the illumination area IR. In this case, the peripheral length from the center point of the illumination area IR1 (and IR3, IR5) on the mask M to the center point of the illumination area IR2 (and IR4, IR6) and the peripheral area of the projection area PA1 The first projection optical system PL1 (and PL3 and PL5) and the second projection optical system PL2 (and PL3 and PL5) are provided so as to have the same length from the center point of the first projection area PA2 (and PA3 and PA5) to the center point of the second projection area PA2 And the second projection optical systems PL2 (and PL4 and PL6) have a different configuration.

The first projection optical system PL1 (and PL3 and PL5) at the odd-numbered (left side in Fig. 7) is configured so that the first projection luminous flux EL2a at the first polarization separation plane P10 of the first polarization beam splitter PBS1, The first polarizing beam splitter PBS1 and the second polarizing beam splitter PBS2 are disposed such that the incident positions of the first polarized beam splitter PBS1 and the second polarized beam splitter PBS2 are positioned on the upper side in the Z direction and on the center side in the X direction, (PBS2), a first biasing member 105 and a second biasing member 106 are disposed. Therefore, the incident position of the second projected luminous flux EL2b on the second polarized-light splitting surface P11 of the second polarized beam splitter PBS2 is smaller than the incident position of the first projected luminous flux EL2a on the Z- And is located on the outer side in the X direction.

In other words, the first projection optical system PL1 is arranged in the Z direction such that the reflection portion of the first polarizing beam splitter PBS1, the reflection portion of the second polarizing beam splitter 106, the reflection portion of the second polarizing beam splitter PBS2, And the reflection portion of the first biasing member 105 in this order. Therefore, as shown in Fig. 7, the second deflecting member 106 is arranged so that the reflection portion of the first polarizing beam splitter PBS1 and the second polarizing beam splitter And the reflective portion of the beam splitter PBS2. In the first projection optical system PL1, the positions of the reflective portions of the first polarizing beam splitter PBS1 and the second polarizing beam splitter PBS2 and the positions of the reflective portions of the first polarizing beam splitter PBS1 and the second polarizing beam splitter PBS2, The position of the second optical axis BX2 becomes a different position with respect to the direction of the second optical axis BX2.

The second projection optical systems PL2 (and PL4 and PL6) at the even-numbered positions (the right side in Fig. 7) are arranged at the first polarized light separation surface P10 of the first polarized beam splitter PBS1, The first polarized beam splitter PBS1 and the second polarized beam splitter PBS2 are disposed such that the incident positions of the first polarized beam splitter PBS1 and the second polarized beam splitter PBS2 are positioned on the lower side in the Z direction and on the outer side in the X direction, PBS2, a first biasing member 105, and a second biasing member 106 are disposed. Therefore, the incident position of the second projected luminous flux EL2b on the second polarized-light splitting surface P11 of the second polarized beam splitter PBS2 is smaller than the incident position of the first projected luminous flux EL2a on the Z- And is located on the center side in the X direction.

In other words, the second projection optical system PL2 is arranged so that, in the Z direction, the reflection portion of the second deflecting member 106, the reflection portion of the first polarizing beam splitter PBS1, the reflection portion of the first deflecting member 105, And the reflection portion of the two polarized beam splitter PBS2. 7, the first deflecting member 105 is arranged so that the reflection portion of the first polarizing beam splitter PBS1 and the second polarizing beam splitter And the reflective portion of the beam splitter PBS2. In the second projection optical system PL2, similarly to the first projection optical system PL1, the positions of the reflective portions of the first polarizing beam splitter PBS1 and the second polarizing beam splitter PBS2, 105 and the second biasing member 106 are at different positions with respect to the direction of the second optical axis BX2.

In addition, the reflection portion of the first polarizing beam splitter PBS1, the reflection portion of the second polarizing beam splitter PBS2, the first deflecting member 105, and the second deflecting member 106, (Corresponding to IR, Img1, Img2, and PA shown in FIG. 5) of the first visual field, the first visual field, the second visual field, and the second visual field, and is formed in a rectangular shape corresponding to the four visual fields Are arranged separately from each other with respect to the width direction (Z direction) of the slit along the field of view CIF. 5, in the case of the odd-numbered first projection optical systems PL1 (and PL3 and PL5), the illumination area IR, the intermediate image Img2, the projection area PA, , And the intermediate image (Img1). On the other hand, in the case of the even-numbered second projection optical systems PL2 (and PL4 and PL6), the intermediate image Img2, the illumination region IR, the intermediate image Img1, PA).

As described above, by configuring the first projection optical systems PL1 (and PL3 and PL5) and the second projection optical systems PL2 (and PL4 and PL6) to be different from each other, the illumination areas IR1 (and IR3 IR5 and IR5 from the center point of the projection area PA1 (and PA3, PA5) on the substrate P to the center point of the illumination area IR2 (and IR4, IR6) (PA2 (and PA4, PA6)) to the center point can be the same length. At this time, since the projection area PA is shifted to the X direction (second optical axis BX2) with respect to the illumination area IR, the projection area PA is shifted from the first axis AX1 of the mask holding drum 21 The second axis AX2 of the substrate supporting drum 25 is shifted toward the second optical axis BX2 in accordance with the amount of shift in the circumferential direction of the projection area PA with respect to the illumination area IR.

As described above, in the second embodiment, in the reflective optical system 100, the image forming position of the projected image formed by the second projected luminous flux EL2b and the defective image formed by the leakage light from the first projected luminous flux EL2a The imaging position can be made different in the scanning direction of the substrate P so that the first light shielding plate 111 can shield the leakage light. Therefore, the reflective optical system 100 can shield the leaked light projected on the substrate P, so that the projected image can be projected onto the substrate P preferably.

The second embodiment differs from the first embodiment in that the field of view of the first projected luminous flux EL2a and the second projected luminous flux EL2b in the reflective optical system 100, i.e., the first incident field, the first emergence field, The second outgoing view field may be divided or a part of the second outgoing view field may be overlapped. In other words, in the second embodiment, it is not necessary to separate the field of view of the first projected luminous flux EL2a and the second projected luminous flux EL2b as in the first embodiment, The degree of freedom in placement can be increased.

In the second embodiment, the half-wave plate 104 is provided between the first polarizing beam splitter PBS1 and the refracting lens 71a, but the present invention is not limited to this configuration. For example, a first quarter wave plate is provided between the first polarization beam splitter PBS1 and the refraction lens 71a, and a second quarter wave plate is provided between the second polarization beam splitter PBS2 and the refraction lens 71a The second quarter wave plate may be provided. In this case, the first quarter wave plate and the second quarter wave plate may be integrated.

[Third embodiment]

Next, the exposure apparatus U3 according to the third embodiment will be described with reference to Fig. In the third embodiment, only parts different from those of the second embodiment are described so as to avoid a description overlapping with the second embodiment, and the same constituent elements as those of the second embodiment are denoted by the same reference numerals as those of the second embodiment . 8 is a diagram showing a configuration of a projection optical system of the exposure apparatus according to the third embodiment. The exposure apparatus U3 according to the second embodiment differs from the exposure apparatus U3 according to the second embodiment in that the imaging position of the projected image formed by the second projected luminous flux EL2b in the reflective optical system 100 of the projection optical system PL, The image forming position on the substrate P is different in the scanning direction of the substrate P. The exposure apparatus U3 according to the third embodiment is arranged so that the imaging position of the projected image formed by the projected luminous flux EL2 and the defective image formed by the leakage light in the reflective optical system 130 of the projection optical system PL Position in the depth direction (focus direction). 8, only the partial optical system 131 and the reflection optical system 130 are shown in order to simplify the explanation in the third embodiment. 8, the mask plane P1 and the substrate P are arranged parallel to the XY plane, the principal ray of the first projected flux of light EL2a from the mask plane P1 is perpendicular to the XY plane, And the principal ray of the second projected light flux EL2b to the projection optical system P is perpendicular to the XY plane.

In the projection optical system PL of the third embodiment, the partial optical system 131 includes a refraction lens 71a and a first concave mirror 72. Since the refracting lens 71a and the first concave mirror 72 have the same configurations as those of the first and second embodiments, their descriptions are omitted. In the partial optical system 131, a plurality of lens members may be disposed between the refracting lens 71a and the first concave mirror 72 similarly to the second embodiment.

The reflecting optical system 130 includes a first polarizing beam splitter PBS1, a second polarizing beam splitter PBS2, a half-wave plate 104, (A first optical member and a third reflecting portion) 105, and a second biasing member (a second optical member and a fourth reflecting portion). The first polarizing beam splitter PBS1, the second polarizing beam splitter PBS2, the 1/2 wave plate 104, the first deflecting member 105 and the second deflecting member 106 are the same as the second embodiment And the angles and the like are different from each other. However, since they are almost the same configuration, the explanation is omitted.

8 shows a case where the first projection light flux EL2a incident on the first polarizing beam splitter PBS1 from the mask plane P1 is reflected by the first polarized light separation surface P10 of the first polarizing beam splitter PBS1 And a first projected luminous flux EL3 in a hypothetical image plane-symmetrical with respect to the center. At this time, the surface on which the imaginary first projected luminous flux EL3 is imaged becomes a virtual mask surface P15. 8 shows the first projection light flux EL2a incident on the first deflecting member 105 from the second polarizing beam splitter PBS2 to the first reflection plane P12 of the first deflecting member 105 And the first projected luminous flux EL4 in a virtual phase centered on the center. At this time, the surface on which the imaginary first projecting luminous flux EL4 is formed becomes a virtual intermediate top plane P16.

The first polarizing beam splitter PBS1, the second polarizing beam splitter PBS2, the first polarizing beam splitter PBS2, the first polarizing beam splitter PBS2, the first polarizing beam splitter PBS2, the first polarizing beam splitter PBS2, The imaging position of the projection image formed by the first projection light beam EL2b and the imaging position of the defective image formed by the leakage light which is a part of the first projection light beam EL2a reflected by the second polarization beam splitter PBS2, (That is, the direction along the principal ray of the imaging light flux). Specifically, the imaging position of the projected image on the hypothetical mask plane P15 of the hypothetical first projected luminous flux EL3 is deepened in the depth direction, and the virtual intermediate image plane of the hypothetical first projection luminous flux EL4 The first polarizing beam splitter PBS2, the first polarizing beam splitter 105 and the second polarizing member 106 are disposed so as to make the imaging position of the defective image in the deflecting direction .

With this arrangement, a good projected image is formed on the substrate P by the second projected luminous flux EL2b reflected by the second polarized light separation surface P11 of the second polarized beam splitter PBS2. The leakage light which is a part of the first projected luminous flux EL2a reflected by the second polarized light separation surface P11 of the second polarized beam splitter PBS2 forms a defective image of the mask pattern immediately in front of the substrate P do. That is, the imaging position of the projection image formed by the second projection light beam EL2b becomes the projection area PA on the substrate P, and the defective image forming position formed by the leakage light is the second polarizing beam splitter PBS2 And the substrate P, as shown in Fig. Therefore, since the imaging position of the defective image is between the second polarizing beam splitter PBS2 and the substrate P, the defective image produced by the leakage light projected onto the substrate P is in a very blurry state.

As described above, the first polarization beam splitter PBS1, the second polarizing beam splitter PBS2, the first deflecting member 105, and the second deflecting member 106 are arranged so that, in the depth direction, The reflecting optical system 130 functions as a light amount reducing section for reducing the light amount of the leakage light projected on the substrate P. [

The imaging position of the projected image on the hypothetical mask plane P15 of the hypothetical first projected flux of light EL3 is deepened in the depth direction and the hypothetical intermediate top plane P16 of the hypothetical first projected flux of light EL4, The optical path from the mask plane P1 to the first polarizing beam splitter PBS1 is made long and the optical path extending from the second polarizing beam splitter PBS2 to the intermediate top plane P7 The optical path is shortened. Therefore, the optical path bent by the first polarizing beam splitter PBS1 from the second polarizing beam splitter PBS2 via the intermediate top surface P7 can be shortened.

As described above, in the third embodiment, in the reflective optical system 130, the image forming position of the projected image formed by the second projected luminous flux EL2b and the defective image formed by the leakage light from the first projected luminous flux EL2a The imaging position can be made different in the direction of the depth of focus (the direction along the principal ray of the imaging light flux). Therefore, the reflective optical system 130 can reduce the amount of the leakage light projected on the substrate P because the reflected light projected onto the substrate P can be made in a very faint state, It is possible to reduce the influence on the projected image.

In the third embodiment, it is not necessary to separate the field of view as in the first embodiment, or to make the incident positions on the second polarized light separation surface P11 different from each other like the second embodiment. Therefore, It is possible to further increase the degree of freedom of design in the case of the present invention.

[Fourth Embodiment]

Next, the exposure apparatus U3 according to the fourth embodiment will be described with reference to Fig. In the fourth embodiment, only parts different from those of the first embodiment are described so as to avoid overlapping description, and the same components as those of the first embodiment are denoted by the same reference numerals as those of the first embodiment . Fig. 9 is a diagram showing the entire configuration of an exposure apparatus (substrate processing apparatus) according to the fourth embodiment. The exposure apparatus U3 of the first embodiment has a configuration in which the substrate P is supported by the substrate support drum 25 having the support surface P2 which is the circumferential surface. U3 support the substrate P in a planar shape.

In the exposure apparatus U3 of the fourth embodiment, the substrate supporting mechanism 150 has a pair of driving rollers 151 on which a substrate P is placed. The pair of driving rollers 151 are rotated by the second driving unit 26 to move the substrate P in the scanning direction.

The substrate supporting mechanism 150 guides the substrate P conveyed from the driving roller R4 from one driving roller 151 to the other driving roller 151 so that the pair of driving rollers 151 The substrate P is laid over the substrate P. The substrate supporting mechanism 150 rotates the pair of driving rollers 151 by the second driving portion 26 to rotate the substrate P laid over the pair of driving rollers 151 against the driving roller R5, .

At this time, since the substrate P in Fig. 9 is substantially parallel to the XY plane, the principal ray of the second projected luminous flux EL2b projected on the substrate P becomes perpendicular to the XY plane. When the principal ray of the second projected luminous flux EL2b projected onto the substrate P becomes perpendicular to the XY plane, the second polarized beam splitter PBS2 (of the projection optical system PL) of the projection optical system PL, along with the principal ray of the second projected luminous flux EL2b, ) On the second polarized light separating surface P11 is also appropriately changed.

In the fourth embodiment, similarly to FIG. 2, the illumination regions IR2 (and IR4 and IR6) are formed from the center points of the illumination regions IR1 (and IR3 and IR5) on the mask M, Of the second projection area PA2 (and PA4, PA6)) from the center point of the projection area PA1 (and PA3, PA5) on the substrate P along the support surface P2 to the center point of the second projection area PA2 Is set to be substantially equal to the circumferential length.

9, the lower control device 16 synchronously rotates the mask holding drum 21 and the pair of driving rollers 151 at a predetermined rotational speed ratio, thereby moving the mask M An image of the mask pattern formed on the mask surface P1 is successively projected and exposed on the surface of the substrate P laid over the pair of drive rollers 151. [

As described above, in the fourth embodiment, even when the substrate P is supported in a planar shape, since the influence of the leakage light on the projected image formed on the substrate P can be reduced, The image can be projected preferably.

In each of the above embodiments, the reflection type is used as the cylindrical mask M, but a transmission type cylindrical mask may be used. In this case, a pattern of the light-shielding film is formed on the outer circumferential surface of a transparent cylindrical body (quartz tube or the like) having a constant thickness, and a plurality of illumination regions IR1 to IR6 The light source and the illumination optical system for projecting the illumination light may be provided inside the transparent cylindrical body. In the case of carrying out such transmission illumination, the deflection beam splitter (PBS), the 1/4 wave plate 41 and the like shown in Figs. 2, 4 and 7 can be omitted.

In addition, although the cylindrical mask M is used in each of the embodiments, a typical plane mask may be used. In this case, the radius Rm of the cylindrical mask M described in Fig. 2 is considered to be infinite, and the first deflecting member (for example, The angle of the reflecting surface P3 of the reflecting surface 76 may be set.

Although a mask (hard mask) in which a static pattern corresponding to a pattern to be projected is formed on the substrate P is used in each of the embodiments described above, A DMD (micro-mirror device) or an SLM (spatial light modulating element) composed of a plurality of movable micromirrors, or the like is provided at the position of the illumination areas IR1 to IR6 (the object surface position of each projection optical module) And there is no mask for transferring the pattern to the substrate P while generating dynamic pattern light by the DMD or SLM in synchronism with the conveyance movement of the substrate P. In this case, the DMD or SLM that generates the dynamic pattern corresponds to the mask member.

1: Device manufacturing system 2: Substrate supply device
4: Substrate collection device 5: Higher control device
11: mask holding mechanism 12: substrate holding mechanism
13: light source device 16: lower control device
21: mask holding drum 25: substrate holding drum
31: light source part 32: light guiding member
41: 1/4 wavelength plate 51: collimator lens
52: fly-eye lens 53: condenser lens
54: Cylindrical lens 55: Illumination field aperture
56: Relay lens 61: Partial optical system
62: reflection optical system 63: projection field aperture
64: focus correction optical member 65: phase shift optical member
66: optical member for magnification correction 67: rotation correction mechanism
68: polarization adjusting mechanism 71: first lens group
72: first concave mirror 76: first deflection member
77: second biasing member 78: third biasing member
79: fourth deflecting member 91: first prism
92: second prism 93: polarized light separating surface
100: reflection optical system (second embodiment)
104: 1/2 wavelength plate (second embodiment)
105: first biasing member (second embodiment)
106: second biasing member (second embodiment)
107: half-wave plate (second embodiment)
111: First Shade Plate (Second Embodiment)
112: Second Shade Plate (Second Embodiment)
130: reflection optical system (third embodiment)
131: partial optical system (third embodiment)
150: substrate holding mechanism (fourth embodiment)
151: drive roller (fourth embodiment)
P: substrate FR1: supply roll
FR2: Recovery roll U1 to Un: Processing device
U3: exposure apparatus (substrate processing apparatus) M: mask
AX1: 1st axis AX2: 2nd axis
P1: mask surface P2: support surface
P3: first reflection surface P4: second reflection surface
P5: Third reflection plane P6: Fourth reflection plane
P7: intermediate surface
P10: first polarized light separating surface (second embodiment)
P11: Second polarized light separating surface (Second Embodiment)
P12: first reflection surface (second embodiment)
P13: second reflecting surface (second embodiment)
P15: mask face of imaginary phase (third embodiment)
P16: Intermediate upper surface of virtual image (third embodiment)
EL1: illumination luminous flux EL2a: first projection luminous flux
EL2b: second projection beam speed
EL3: first projected luminous flux in virtual phase (third embodiment)
EL4: first projection light flux in virtual phase (third embodiment)
Rm: radius of curvature Rfa: radius of curvature
CL: center plane PBS: polarizing beam splitter
PBS1: first polarizing beam splitter (second embodiment)
PBS2: second polarizing beam splitter (second embodiment)
IR1 to IR6: illumination area IL1 to IL6: illumination optical system
ILM: illumination optical module PA1 to PA6: projection area
PL1 to PL6: projection optical system PLM: projection optical module
BX1: first optical axis BX2: second optical axis

Claims (13)

An exposure apparatus for projecting and exposing a mask pattern onto a long substrate having flexibility,
A mask holding drum which is rotatable about a first axis and holds the mask pattern along a cylindrical pattern surface having a predetermined radius of curvature from the first axis,
Wherein the substrate is supported by a part of a cylindrical supporting surface having a constant radius of curvature from the second shaft while being rotatable about a second axis parallel to the first axis, A substrate support drum,
A partial optical system for projecting a first projection light from the mask pattern held on the mask holding drum and forming an intermediate image of the mask pattern on a predetermined intermediate top surface and a second projection optical system for projecting the first projection light, And a light guiding optical system for guiding the first projection light after having passed through the intermediate top surface to the partial optical system as second projection light, and a light guiding optical system for guiding the first projection light to the partial optical system, A projection optical system for projecting the projected image of the intermediate image onto the substrate supported by the substrate support drum,
And a second projection optical system configured to project an image of the projection image formed by the second projection light and a part of the leakage light of the first projection light so as to reduce an amount of light projected onto the substrate as a part of the first projection light, (Defective image) formed by the light-shielding portion in the direction along the surface of the substrate or in the direction of the depth of focus. The method according to claim 1,
Wherein the partial optical system includes a lens member into which the first and second projection lights enter and a reflection optical member that reflects the first and second projection lights passing through the lens member,
The first projection light from the mask pattern is incident on the lens member, is reflected by the reflecting optical member, and then exits from the lens member to reach the intermediate upper surface,
And the second projection light from the intermediate top surface is made incident on the lens member, is reflected by the reflection optical member, and is emitted from the lens member to reach onto the substrate. The method of claim 2,
The light amount reduction unit is configured as the light-guiding optical system,
A first polarizing beam splitter which reflects the first projection light from the mask pattern and enters the lens member and further transmits the second projection light from the intermediate upper surface to enter the lens member; ,
A wave plate for polarizing the first and second polarized light beams emitted from the first polarization beam splitter,
Wherein the first projection light emitted from the lens member passes through the wave plate and is incident on the intermediate upper surface and is reflected by the second projection light emitted from the lens member and passed through the wave plate, A second polarizing beam splitter for directing light onto the substrate,
A first optical member that makes the first projection light transmitted through the second polarization beam splitter enter the intermediate top surface,
And a second optical member for causing the second projection light from the intermediate top surface to enter the first polarization beam splitter. The method of claim 3,
The light-
And a first light blocking plate provided between the second polarizing beam splitter and the substrate,
An imaging position of the projection image formed on the substrate by the second projection light reflected by the second polarization beam splitter, and an imaging position of the projection light reflected by the second polarization beam splitter without being transmitted therethrough, The defective image forming position formed on the substrate by the leakage light is different in the direction along the surface of the substrate,
Wherein the first light blocking plate is provided at a position for shielding the leakage light from the second polarization beam splitter toward the substrate. The method of claim 4,
The light-
And a second light blocking plate that shields the leakage light from the first polarization beam splitter to the second polarization beam splitter. The method of claim 3,
The light-
An imaging position of the projection image formed on the substrate by the second projection light reflected by the second polarization beam splitter, and an imaging position of the projection light reflected by the second polarization beam splitter without being transmitted therethrough, And the imaging position of the defective image formed by the leakage light is different in the direction of the depth of focus. The method of claim 6,
Wherein an optical path of the first projection light from the mask pattern to the first polarization beam splitter is set longer than an optical path of the first projection light from the second polarization beam splitter to the intermediate top surface. The method according to any one of claims 1 to 7,
Wherein the substrate is scanned with respect to the projected image by rotation of the substrate support drum,
Wherein the projected image has a length in a length / width direction in a scanning direction, which is a ratio of a length in a scanning direction for scanning the substrate to a length in a width direction orthogonal to the scanning direction, The exposure apparatus being limited to an elongated region. The method according to any one of claims 1 to 7,
And an illumination optical system for guiding the laser light from the laser light source to the pattern surface of the mask holding drum as illumination light. The method according to any one of claims 1 to 7,
Wherein the projection optical system includes a plurality of projection optical systems corresponding to each of a plurality of illumination regions arranged on the pattern surface of the mask holding drum,
Wherein the plurality of projection optical systems are configured to guide a plurality of the first projection lights from the plurality of illumination areas of the pattern surface to the plurality of intermediate top surfaces and to project the plurality of second projection light from the plurality of intermediate top surfaces To each of a plurality of projection regions disposed on the substrate. The method of claim 10,
Wherein the mask holding drum and the substrate supporting drum are arranged such that,
Wherein a plurality of the projection optical systems are arranged in two rows in a circumferential direction of the pattern surface of the mask holding drum and the projection area of the substrate with respect to the illumination area of the pattern surface in each projection optical system is shifted in the circumferential direction the position of the second axis with respect to the first axis is located at a different position according to the shift amount in the circumferential direction of the projection area with respect to the illumination area,
The circumferential length connecting the center of the illumination region corresponding to the projection optical system of the first row and the center of the illumination region corresponding to the projection optical system of the second row along the circumferential direction on the pattern surface of the mask holding drum is 1 The center of the projection area corresponding to the projection optical system of the tenth and the center of the projection area corresponding to the projection optical system of the second column are connected along the circumferential direction on the substrate supported by the support surface of the substrate support drum And the length is set equal to the circumferential length. An exposure apparatus comprising: the exposure apparatus according to any one of claims 1 to 7;
And a substrate supply device for supplying the substrate to the exposure apparatus in a roll manner. There is provided a method of projecting and exposing a mask pattern onto a substrate using the exposure apparatus according to any one of claims 1 to 7,
And forming the device according to the mask pattern by processing the projection-exposed substrate.

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