TW201905603A - Projection optical device, scanning exposure device, and component manufacturing method - Google Patents

Abstract

The invention provides a substrate processing device, which comprises: a projection optical system (PL) which forms an intermediate image by imaging a first projection beam (EL2a) from a mask (M) and forms a projection image by reimaging onto a substrate (P) a second projection beam (EL2b) from an intermediate image surface (P7) on which the intermediate image is formed; and a light intensity reduction unit for reducing the light intensity of leak light generated from the first projection beam (EL2a) and projected onto the substrate (P). The projection optical system (PL) includes a partial optical system (61) for imaging the first projection beam (EL2a) from the mask (M) to project the image onto the intermediate image surface (P7); and a reflection optical system (62) for introducing the first projection beam (EL2a) projected from the partial optical system (61) to the intermediate image surface (P7) while introducing the second projection beam (EL2b) from the intermediate image surface (P7) into the partial optical system (61). The partial optical system (61) reimages the second projection beam (EL2b) from the intermediate image surface (P7) to form the projection image onto the substrate (P).

Description

   Projection optical device, scanning exposure device, and element manufacturing method   

The present invention relates to a substrate processing apparatus, a component manufacturing system, and a component manufacturing method.

Conventionally, as a substrate processing apparatus, there is an exposure apparatus in which a projection optical system is arranged between a mask and a plate (substrate) (for example, refer to Patent Document 1). This projection optical system is composed of a lens group, a plane mirror, two polarizing beam splitters, two mirrors, a λ / 4 wavelength plate, and a field diaphragm. In this exposure device, the projected light of the S-polarized light illuminating the projection optical system through the mask is reflected by one of the polarizing beam splitters. The reflected S-polarized projection light is converted into circularly polarized light by passing through a λ / 4 wavelength plate. The circularly polarized light is reflected by a plane mirror after passing through the lens group. The reflected circularly polarized light is converted into P polarized light by passing through a λ / 4 wavelength plate. The P-polarized projection light penetrates the other polarizing beam splitter and is reflected by one mirror. The projected light of the P polarized light reflected by one of the mirrors forms an intermediate image on the field diaphragm. The projected light of the P-polarized light passing through the field diaphragm is reflected by the other mirror and enters one of the polarized beam splitters again. The projected light of the P polarized light passes through one of the polarized beam splitters. The projected light of the transmitted P polarized light is converted into circularly polarized light by passing through a λ / 4 wavelength plate. The circularly polarized projection light passes through the lens group and is reflected by the plane mirror. The reflected circularly polarized light is converted into S-polarized light by passing through a λ / 4 wavelength plate. The projected light of the S-polarized light is reflected by the other polarizing beam splitter and reaches the plate.

[Advanced technical literature]

[Patent Document 1] Japanese Unexamined Patent Publication No. 8-64501

At this time, a part of the projection light reflected and transmitted by the polarizing beam splitter becomes leakage light. That is, a part of the projection light reflected by the polarizing beam splitter is separated, and a part of the separated projection light becomes leakage light and penetrates the polarizing beam splitter or a part of the projection light transmitted by the polarizing beam splitter And a part of the separated projection light becomes leakage light and is reflected by the polarizing beam splitter. In this case, a defective image may be formed on the substrate due to the leakage light imaging on the substrate. At this time, since a projection image of the projection light and a defective image formed by the leakage light are formed on the substrate, a double exposure may be caused.

The present invention has been made in view of the above-mentioned problems, and an object thereof is to provide a substrate processing apparatus, a component manufacturing system, and a component manufacturing method capable of reducing the influence of leakage light on a projection image formed on a substrate and suitable for projecting the projection image on a substrate.

According to a first aspect of the present invention, there is provided a substrate processing apparatus including a projection optical system that forms a first intermediate projection image of a pattern from a mask member on a predetermined intermediate image plane to form an intermediate image of the pattern. The second projection light traveling from the intermediate image plane toward the predetermined substrate is returned to pass through the projection optical system again, so as to form a projection image of the intermediate image for re-imaging on the substrate; and a light amount reducing section that reduces a portion of the first projection light The amount of light projected onto the substrate as leaked light; the projection optical system has a part of the optical system that injects the first projection light from the pattern to form the intermediate image; and the light-guiding optical system is optical from the part The first projection light emitted from the system is directed to the intermediate image plane, and the second projection light from the intermediate image plane is directed to the partial optical system again; the partial optical system is the second optical system from the intermediate image plane After the projection light is re-imaged, the projection image is formed on the substrate.

According to a second aspect of the present invention, there is provided a component manufacturing system including the substrate processing apparatus according to the first aspect of the present invention, and a substrate supply apparatus that supplies the substrate to the substrate processing apparatus.

According to a third aspect of the present invention, there is provided a component manufacturing method including an operation of performing a projection exposure on the substrate using the substrate processing apparatus of the first aspect of the present invention, and forming the substrate by processing the substrate subjected to the projection exposure. The movement of the pattern of the mask member.

According to aspects of the present invention, a substrate processing apparatus, a component manufacturing system, and a component manufacturing method capable of reducing the amount of light leaked onto a substrate and suitable for projecting a projection image on the substrate can be provided.

1‧‧‧component manufacturing system

2‧‧‧ substrate supply device

4‧‧‧ substrate recovery device

5‧‧‧ host control device

11‧‧‧Mask holding mechanism

12‧‧‧ substrate support mechanism

13‧‧‧light source device

16‧‧‧ Lower control device

21‧‧‧Photomask holding cylinder

25‧‧‧ substrate support cylinder

31‧‧‧Light source department

32‧‧‧light guide

41‧‧‧1 / 4 wave plate

51‧‧‧ collimating lens

52‧‧‧Flying Eye Lens

53‧‧‧ condenser lens

54‧‧‧ cylindrical lens

55‧‧‧illumination field diaphragm

56‧‧‧ relay lens

61‧‧‧Part of the Department of Optics

62‧‧‧Reflective Optics

63‧‧‧ projection field diaphragm

64‧‧‧ Focus Correction Optics

65‧‧‧Image shifting optical member

66‧‧‧Optical member for magnification correction

67‧‧‧rotation correction mechanism

68‧‧‧ Polarization adjustment mechanism

71‧‧‧1st lens group

71a‧‧‧refractive lens

72‧‧‧ 1st concave mirror

76‧‧‧The first deflection member

77‧‧‧The second deflection member

78‧‧‧3rd deflection member

79‧‧‧ 4th deflection member

91‧‧‧ first 1

92‧‧‧ 2nd

93‧‧‧polarized light separation surface

100‧‧‧Reflective optics (second embodiment)

104‧‧‧1 / 2 wavelength plate (second embodiment)

105‧‧‧ the first deflection member (second embodiment)

106‧‧‧Second deflection member (second embodiment)

107‧‧‧1 / 2 wavelength plate (second embodiment)

111‧‧‧1st light shielding plate (second embodiment)

112‧‧‧Second shading plate (second embodiment)

130‧‧‧Reflective optics (third embodiment)

131‧‧‧ part of optical system (third embodiment)

150‧‧‧ substrate support mechanism (fourth embodiment)

151‧‧‧drive roller (4th embodiment)

AX1‧‧‧1st axis

AX2‧‧‧ 2nd axis

BX1‧‧‧1st optical axis

BX2‧‧‧ 2nd optical axis

CL‧‧‧ center plane

EL1‧‧‧illuminating beam

EL2a‧‧‧The first projection beam

EL2b‧‧‧ 2nd projection beam

EL3 ‧ ‧ imaginary first projection beam (third embodiment)

EL4 ‧ ‧ imaginary first projection beam (third embodiment)

FR1‧‧‧Supply roller

FR2‧‧‧Recycling roller

IL1 ~ IL6‧‧‧ Department of Lighting Optics

ILM‧‧‧Lighting Optical Module

IR1 ~ IR6‧‧‧Lighting area

M‧‧‧Photomask

P‧‧‧ substrate

P1‧‧‧Mask surface

P2‧‧‧bearing surface

P3‧‧‧1st reflective surface

P4‧‧‧Second reflective surface

P5‧‧‧3rd reflective surface

P6‧‧‧4th reflecting surface

P7‧‧‧Middle image plane

P10‧‧‧The first polarized light separation surface (second embodiment)

P11‧‧‧Second polarized light separation surface (second embodiment)

P12‧‧‧1st reflective surface (second embodiment)

P13‧‧‧Second reflective surface (second embodiment)

P15‧‧‧imaginary photomask surface (third embodiment)

P16‧‧‧imaginary intermediate image plane (third embodiment)

PA1 ~ PA6‧‧‧‧ projection area

PBS‧‧‧polarized beam splitter

PBS1‧‧‧first polarizing beam splitter (second embodiment)

PBS2‧‧‧Second polarizing beam splitter (second embodiment)

PL1 ~ PL6‧‧‧‧Projection Optics

PLM‧‧‧Projection Optical Module

Rfa‧‧‧curvature radius

Rm‧‧‧Curvature radius

U1 ~ Un‧‧‧Processing device

U3‧‧‧ exposure device (substrate processing device)

FIG. 1 is a diagram showing the configuration of a component manufacturing system according to the first embodiment.

FIG. 2 is a diagram showing the overall configuration of an exposure apparatus (substrate processing apparatus) according to the first embodiment.

FIG. 3 is a diagram showing the arrangement of an illumination area and a projection area of the exposure apparatus shown in FIG. 2.

FIG. 4 is a diagram showing a configuration of an illumination optical system and a projection optical system of the exposure apparatus shown in FIG. 2.

FIG. 5 is a view in which a full imaging field of a circle formed by a projection optical module is developed on a YZ plane.

Fig. 6 is a flowchart showing a device manufacturing method according to the first embodiment.

FIG. 7 is a diagram showing the configuration of the illumination optical system and the projection optical system of the exposure apparatus according to the second embodiment.

FIG. 8 is a diagram showing a configuration of a projection optical system of an exposure apparatus according to a third embodiment.

FIG. 9 is a diagram showing the overall configuration of an exposure apparatus (substrate processing apparatus) according to a fourth embodiment.

The aspect (embodiment) for implementing the present invention will be described in detail with reference to the drawings. The invention is not limited to the contents described in the following embodiments. In addition, the constituent elements described below include those which are easily conceivable by the practitioner, and also include substantially the same thing. The constituent elements described below can be appropriately combined. In addition, various omissions, substitutions, or changes of constituent elements can be made without departing from the gist of the present invention.

[First Embodiment]

The substrate processing apparatus of the first embodiment is an exposure apparatus that applies an exposure process to a substrate, and the exposure apparatus is an element manufacturing system that is assembled by applying various processes to the exposed substrate to manufacture elements. First, a component manufacturing system will be described.

<Component manufacturing system>

FIG. 1 is a diagram showing the configuration of a component manufacturing system according to the first embodiment. The component manufacturing system 1 shown in FIG. 1 is a production line (flexible display production line) that manufactures flexible displays as components. Examples of the flexible display include an organic EL display. This component manufacturing system 1 is configured to feed the flexible substrate P from a supply roll FR1 that has been wound into a roll, and then the substrate P is continuously subjected to various processes. The processed substrate is then processed. P is wound as a flexible element on a reel FR2 for recycling, a so-called roll-to-roll method. The component manufacturing system 1 of the first embodiment shows that the substrate P formed into a thin film is fed out from the supply roll FR1, and the substrate P sent out from the supply roll FR1 is sequentially passed through the n processing units U1 and U1. U2, U3, U4, U5, ... Un are examples of winding up to the reel FR2 for recycling. First, a substrate P that is a processing target of the element manufacturing system 1 will be described.

The substrate P is, for example, a foil made of a metal or alloy such as a resin film and stainless steel. The material of the resin film includes, for example, polyethylene resin, polypropylene resin, polyester resin, ethylene-ethylene copolymer resin, polyvinyl chloride resin, cellulose resin, polyamide resin, polyimide resin, and polycarbonate resin. 1 or more of polystyrene resin and vinyl acetate resin.

For the substrate P, it is preferable to select, for example, a thermal expansion coefficient that is significantly larger and can substantially ignore the amount of deformation caused by heat in various processes performed on the substrate P. The thermal expansion coefficient can be set to be smaller than a threshold value corresponding to a process temperature or the like, for example, by mixing an inorganic filler into a resin film. Examples of the inorganic filler include titanium oxide, zinc oxide, aluminum oxide, and silicon oxide. In addition, the substrate P may be a single-layered body of ultra-thin glass having a thickness of about 100 μm produced by a floating method or the like, or a laminated body in which the above-mentioned thin resin film, foil, or the like is bonded to the ultra-thin glass.

The substrate P configured in this manner is wound into a roll shape to become a supply roll FR1, and this supply roll FR1 is mounted on the component manufacturing system 1. The component manufacturing system 1 equipped with the supply roll FR1 repeatedly performs various processes for manufacturing one component on the substrate P sent out from the supply roll FR1. Therefore, the processed substrate P is in a state where a plurality of elements are connected. That is, the substrate P sent out from the supply roll FR1 is a multi-sided substrate. In addition, the substrate P may be one whose surface is modified and activated by a predetermined pretreatment in advance, or a fine partition wall structure (concave-convex structure) formed on the surface for precise patterning.

The processed substrate P is wound into a roll shape and recovered as a recovery roll FR2. The reel FR2 is mounted on a cutting device (not shown). A cutting device equipped with a recycling roll FR2 divides (cuts) the processed substrate P into individual components, thereby forming a plurality of components. The size of the substrate P is, for example, about 10 cm to 2 m in the width direction (direction of the short side), and more than 10 m in the length direction (length direction). Of course, the size of the substrate P is not limited to the above-mentioned size.

Next, a component manufacturing system 1 will be described with reference to FIG. 1. In FIG. 1, the X direction, the Y direction, and the Z direction form an orthogonal coordinate system orthogonal to each other. The X direction is in a horizontal plane, and the direction connecting the supply roll FR1 and the recovery roll FR2 is the left-right direction in FIG. 1. The Y direction is a direction orthogonal to the X direction in the horizontal plane, and is the front-back direction in FIG. 1. The Y direction is the axial direction of the supply roll FR1 and the recovery roll FR2. The Z direction is a direction (vertical direction) orthogonal to the X direction and the Y direction.

Element manufacturing system 1 includes a substrate supply device 2 for supplying a substrate P, a processing device U1 to Un that performs various processes on the substrate P supplied from the substrate supply device 2, and The substrate recovery device 4 and each device of the control element manufacturing system 1 have a higher-level control device 5.

A supply roll FR1 is rotatably mounted on the substrate supply device 2. The substrate supply device 2 includes a drive roller R1 that sends out a substrate P from a mounted supply roll FR1, and an edge position controller EPC1 that adjusts the position of the substrate P in the width direction (Y direction). The driving roller D1 rotates while holding the front and back surfaces of the substrate P, and sends out the substrate P from the supply roll FR1 toward the transporting direction of the recovery roll FR2, thereby supplying the substrate P to the processing devices U1 to Un. At this time, the edge position controller EPC1 moves the substrate P to the position of the substrate P in the width direction end (edge) relative to the target position within a range of ± tens of μm to ± tens of μm. The width direction is to correct the position of the substrate P in the width direction.

A reel roll FR2 is rotatably mounted on the substrate recovery device 4. The substrate recovery device 4 includes a driving roller R2 that pulls the processed substrate P toward the recovery roll FR2 side, and an edge position controller EPC2 that adjusts the position of the substrate P in the width direction (Y direction). The substrate recovery device 4 rotates while holding the front and back surfaces of the substrate P with the driving roller R2, pulls the substrate P in the conveying direction, and rotates the recovery roll FR2 to wind the substrate P accordingly. At this time, the edge position controller EPC2 is configured in the same manner as the edge position controller EPC1, and the position of the substrate P in the width direction is corrected to prevent the width direction end (edge) of the substrate P from being uneven in the width direction.

The processing device U1 is a coating device that applies a photosensitive functional liquid to the surface of the substrate P supplied from the substrate supply device 2. As the photosensitive functional liquid, for example, a photoresist, a photosensitive silane coupling agent, a UV-curable resin solution, and other solutions for a photosensitive plating catalyst are used. The processing device U1 is sequentially provided with a coating mechanism Gp1 and a drying mechanism Gp2 from the upstream side in the conveying direction of the substrate P. The coating mechanism Gp1 includes a pressure roller DR1 that winds the substrate P, and a coating roller DR2 that faces the pressure roller DR1. The coating mechanism Gp1 holds the substrate P with the pressure roller DR1 and the coating roller DR2 in a state where the supplied substrate P is wound on the pressure roller DR1. Next, the coating mechanism Gp1 rotates the pressure roller DR1 and the coating roller DR2 to apply the photosensitive functional liquid with the coating roller DR2 while moving the substrate P in the conveying direction. The drying mechanism Gp2 blows dry air such as hot air or dry air to remove the solute (solvent or water) contained in the photosensitive functional liquid, and dries the substrate P coated with the photosensitive functional liquid to form a photosensitivity on the substrate P. Functional layer.

The processing device U2 is a heating device that heats the substrate P transferred from the processing device U1 to a predetermined temperature (for example, about several 10 to 120 ° C.) in order to stabilize the photosensitive functional layer formed on the surface of the substrate P. The processing device U2 is provided with a heating chamber HA1 and a cooling chamber HA2 in this order from the upstream side in the transport direction of the substrate P. The heating chamber HA1 is provided with a plurality of rollers and a plurality of air turn bars inside, and the plurality of rollers and a plurality of air turn bars constitute a conveying path of the substrate P. A plurality of rollers are provided so as to contact the back surface of the substrate P, and a plurality of air reversing levers are provided on the surface side of the substrate P in a non-contact state. The plurality of rollers and the plurality of air reversing levers are elongated conveying paths of the substrate P, and meandering conveying paths. The substrate P in the heating chamber HA1 is heated to a predetermined temperature while being conveyed along a meandering conveyance path. The cooling chamber HA2 cools the substrate P to the ambient temperature so that the temperature of the substrate P heated in the heating chamber HA1 is consistent with the ambient temperature of the post-processing (processing device U3). The cooling chamber HA2 is provided with a plurality of rollers and a plurality of rollers in the same manner as the heating chamber HA1, and is arranged in a meandering transport path to extend the transport path of the substrate P. The substrate P in the cooling chamber HA2 is cooled while being transported along a meandering transport path. A driving roller R3 is provided on the downstream side in the conveying direction of the cooling chamber HA2. The driving roller R3 rotates while holding the substrate P passing through the cooling chamber HA2, and supplies the substrate P to the processing device U3.

The processing device (substrate processing device) U3 is an exposure device for projecting an exposure (transfer) display circuit or wiring pattern on a substrate (photosensitive substrate) P supplied from the processing device U2 and having a photosensitive functional layer formed on the surface. The details will be described later. The processing device U3 illuminates the reflective mask M with an illumination beam, and projects and exposes the projection beam obtained by reflecting the illumination beam by the mask M on the substrate P. The processing device U3 includes a driving roller R4 that transports the substrate P supplied from the processing device U2 to the downstream side in the conveying direction, and an edge position controller EPC that adjusts the position of the substrate P in the width direction (Y direction). The driving roller R4 rotates while holding both the front and back surfaces of the substrate P to feed the substrate P to the downstream side in the conveying direction, thereby supplying the substrate P to the exposure position. The edge position controller EPC has the same configuration as the edge position controller EPC1, and corrects the position of the substrate P in the width direction so that the width direction of the substrate P at the exposure position becomes the target position. In addition, the processing device U3 has two sets of driving rollers R5 and R6 that transport the substrate P to the downstream side in the conveying direction in a state where the exposed substrate P is loosened. The two sets of driving rollers R5 and R6 are separated in the conveying direction of the substrate P. At a predetermined interval. The driving roller R5 rotates on the upstream side of the substrate P that is conveyed by the nip, and the driving roller R6 rotates on the downstream side of the substrate P that is conveyed by the nip, and supplies the substrate P to the processing device U4. At this time, since the substrate P is given slack, it is possible to absorb the variation in the conveying speed generated on the downstream side of the driving roller R6 in the conveying direction, and to cut off the influence of the variation in the conveying speed on the exposure processing of the substrate P. In addition, an alignment microscope AM1 is provided in the processing device U3 to perform alignment of the image of a part of the mask pattern of the mask M and the relative position of the substrate P and detect an alignment mark or the like formed on the substrate P in advance. , AM2.

The processing device U4 is a wet processing device that performs wet development processing, electroless plating processing, and the like on the exposed substrate P transferred from the processing device U3. The processing device U4 includes three processing tanks BT1, BT2, and BT3 and a plurality of rollers for transporting the substrate P in the vertical direction (Z direction). The plurality of rollers are arranged such that the substrate P sequentially passes through the conveying paths inside the three processing tanks BT1, BT2, and BT3. A driving roller R7 is provided downstream of the processing tank BT3 in the conveying direction. The driving roller R7 rotates while holding the substrate P passing through the processing tank BT3 to supply the substrate P to the processing apparatus U5.

Although not shown, the processing device U5 is a drying device for drying the substrate P transferred from the processing device U4. The processing device U5 adjusts the moisture content of the processing device U4 to be wet-processed and adheres to the substrate P to a predetermined moisture content. The substrate P dried by the processing device U5 is transported to the processing device Un after passing through several processing devices. After being processed by the processing apparatus Un, the substrate P is wound on the reel FR2 for recycling of the substrate recovery apparatus 4.

The higher-level control device 5 controls the substrate supply device 2, the substrate recovery device 4, and a plurality of processing devices U1 to Un. The higher-level control device 5 controls the substrate supply device 2 and the substrate recovery device 4, and transfers the substrate P from the substrate supply device 2 to the substrate recovery device 4. In addition, the higher-level control device 5 controls a plurality of processing devices U1 to Un in synchronization with the conveyance of the substrate P to perform various processes on the substrate P.

<Exposure device (substrate processing device)>

Next, the configuration of the exposure apparatus (substrate processing apparatus) as the processing apparatus U3 of the first embodiment will be described with reference to FIGS. 2 to 4. FIG. 2 is a diagram showing the overall configuration of an exposure apparatus (substrate processing apparatus) according to the first embodiment. FIG. 3 is a diagram showing the arrangement of an illumination area and a projection area of the exposure apparatus shown in FIG. 2. Fig. 4 is a diagram showing the constitutions of an illumination optical system and a projection optical system of the exposure apparatus shown in Fig. 2.

The so-called scanning exposure device of the exposure device U3 shown in FIG. 2 projects the substrate P in the conveying direction (scanning direction) while projecting an image of a mask pattern formed on the outer peripheral surface of the cylindrical mask M to The surface of the substrate P. In FIGS. 2 and 3, the orthogonal coordinate system orthogonal to the X direction, the Y direction, and the Z direction is the same orthogonal coordinate system as that of FIG. 1.

First, the mask (mask member) M used for the exposure apparatus U3 is demonstrated. The photomask M is, for example, a reflective photomask using a metal cylindrical body. The photomask M is formed into a cylindrical body having a peripheral surface (peripheral surface) having a radius of curvature Rm centered on the first axis AX1 extending in the Y direction, and has a certain thickness in the radial direction. The circumferential surface of the mask M is a mask surface (pattern surface) P1 on which a predetermined mask pattern (pattern) is formed. The mask surface P1 includes a highly reflective portion that reflects the light beam in a predetermined direction with high efficiency, and a reflection suppression portion that does not reflect the light beam in the predetermined direction or reflects with low efficiency. The mask pattern is formed of the high reflection portion and the reflection suppression portion. This photomask M is a metal cylindrical body, so it can be made at a low price. It can be used in high-precision laser beam drawing devices to pattern photomasks (in addition to various patterns for panels, there are also (Including cases such as alignment reference marks and encoder measurement scales) are precisely formed on the cylindrical outer peripheral surface.

In addition, the mask M may be the whole or a part of a panel pattern corresponding to one display element, or may be a panel pattern including a plurality of display elements. In addition, a plurality of panel patterns may be repeatedly formed on the photomask M in a circumferential direction around the first axis AX1, or a small number of panel patterns may be repeatedly formed in a direction parallel to the first axis AX1. In addition, in the mask M, a pattern for a panel in which a first display element is formed and a pattern for a panel in a second display element that is different from the size of the first display element may be used. The photomask M is not limited to the shape of a cylindrical body as long as it has a circumferential surface with a radius of curvature Rm centered on the first axis AX1. For example, the mask M may be an arc-shaped plate material having a circumferential surface. In addition, the mask M may have a thin plate shape, or the thin plate shape M may be curved to have a circumferential surface.

Next, the exposure apparatus U3 shown in FIG. 2 will be described. The exposure device U3, in addition to the driving rollers R4 to R6, the edge position controller EPC3, and the alignment microscopes AM1 and AM2, also includes a mask holding mechanism 11, a substrate supporting mechanism 12, an illumination optical system IL, a projection optical system PL, And lower control device 16. The exposure device U3 guides the illumination light beam EL1 emitted from the light source device 13 with the illumination optical system IL and the projection optical system PL, and thereby the image of the mask pattern of the mask M held by the mask holding mechanism 11 , Projected onto the substrate P supported by the substrate supporting mechanism 12.

The lower-level control device 16 controls each part of the exposure device U3 and causes each part to perform processing. The lower-level control device 16 may be a part or all of the upper-level control device 5 of the component manufacturing system 1. The lower control device 16 may be another device controlled by the upper control device 5 and different from the upper control device 5. The lower control device 16 includes, for example, a computer.

The mask holding mechanism 11 includes a mask holding cylinder (mask holding member) 21 that holds the mask M, and a first driving unit 22 that rotates the mask holding cylinder 21. The mask holding cylinder 21 holds the mask M so that the first axis AX1 of the mask M is the center of rotation. The first driving unit 22 is connected to the lower control device 16 and rotates the photomask holding cylinder 21 with the first axis AX1 as a rotation center.

The mask holding mechanism 11 is not limited to this configuration, although the mask M holds the cylindrical body by the mask holding cylinder 21. The mask holding mechanism 11 may hold and hold a thin plate-shaped mask M along the outer peripheral surface of the mask holding cylinder 21. In addition, the mask holding mechanism 11 may hold a mask M having a pattern formed on a surface of a plate curved in an arc shape on the outer peripheral surface of the mask holding cylinder 21.

The substrate support mechanism 12 includes a substrate support cylinder 25 that supports the substrate P, a second drive unit 26 that rotates the substrate support cylinder 25, a pair of air turn bars ATB1, ATB2, and a pair of guide rollers 27 , 28. The substrate supporting cylinder 25 is formed in a cylindrical shape having a radius of curvature around the second axis AX2 extending in the Y direction and having a peripheral surface (peripheral surface) Rfa. Here, the first axis AX1 and the second axis AX2 are parallel to each other, and a plane passing through the first axis AX1 and the second axis AX2 is a center plane CL. A part of the circumferential surface of the substrate supporting cylinder 25 is a supporting surface P2 that supports the substrate P. In other words, the substrate support cylinder 25 supports the substrate P by winding the substrate P on its support surface P2. The second driving unit 26 is connected to the lower control device 16 and rotates the substrate support cylinder 25 with the second axis AX2 as a rotation center. A pair of air reversing levers ATB1 and ATB2 are provided on the upstream side and the downstream side of the substrate P in the conveying direction via the substrate support cylinder 25, respectively. A pair of air reversing levers ATB1 and ATB2 are provided on the surface side of the substrate P, and are provided on the lower side than the support surface P2 of the substrate support cylinder 25 in the vertical direction (Z direction). The pair of guide rollers 27 and 28 are respectively provided on the upstream side and the downstream side of the substrate P in the conveying direction of the substrate P via a pair of air reversing levers ATB1 and ATB2. A pair of guide rollers 27 and 28. One of the guide rollers 27 guides the substrate P transferred from the driving roller R4 to the air reversing lever ATB1, and the other of the guide rollers 28 transfers the substrate from the air reversing lever ATB2. P is guided to the driving roller R5.

As described above, the substrate supporting mechanism 12 guides the substrate P transferred from the driving roller R4 to the air reversing lever ATB1 with the guide roller 27, and introduces the substrate P passing through the air reversing lever ATB1 into the substrate supporting cylinder 25. The substrate supporting mechanism 12 rotates the substrate supporting cylinder 25 by the second driving unit 26, and thereby supports the substrate P introduced into the substrate supporting cylinder 25 with the supporting surface P2 of the substrate supporting cylinder 25, and conveys it to the air while turning over Rod ATB2. The substrate supporting mechanism 12 guides the substrate P transferred to the air reversing lever ATB2 to the guide roller 28 with the air reversing lever ATB2, and guides the substrate P passing through the guide roller 28 to the driving roller R5.

At this time, the lower control device 16 is connected to the first driving unit 22 and the second driving unit 26, and the mask holding cylinder 21 and the substrate supporting cylinder 25 are rotated synchronously at a predetermined rotation speed ratio, and will be formed on the mask M. The image of the mask pattern of the mask surface P1 is continuously and repeatedly projected onto the surface of the substrate P (the surface curved along the circumferential surface) wound around the support surface P2 of the substrate support cylinder 25.

The light source device 13 emits an illumination light beam EL1 which is illuminated by the mask M. The light source device 13 includes a light source section 31 and a light guide member 32. The light source section 31 is a light source that emits light of a predetermined wavelength band and a UV band with a strong photoactivity function suitable for the exposure of the photosensitive functional layer on the substrate P. As the light source section 31, for example, a lamp light source such as a mercury lamp having a glow line (g-line, h-line, i-line, etc.) having an ultraviolet band, a laser diode having a oscillating peak in the ultraviolet band having a wavelength of 450 nm or less, Solid light source such as polar body (LED), or KrF excimer laser (wavelength 248nm), ArF excimer laser (wavelength 193nm), XeCl excimer laser (wavelength 308nm), etc. Gas laser light source.

Here, the illumination light beam EL1 emitted from the light source device 13 is incident on a polarizing beam splitter PBS described later. For the illumination beam EL1, in order to suppress the energy loss caused by the polarization beam splitter PBS separating the illumination beam EL1, it is preferable that the incident illumination beam EL1 can reflect substantially all of the beam in the polarization beam splitter PBS. The polarizing beam splitter PBS can reflect the linearly polarized light beams of the S polarized light, and allow the linearly polarized light beams of the P polarized light to penetrate. Therefore, it is preferable that the light source unit 31 of the light source device 13 uses a laser beam that emits the illumination beam EL1 that enters the polarizing beam splitter PBS as a linearly polarized beam (S-polarized light). In addition, since the laser light has a high energy density, the illuminance of the light beam projected onto the substrate P can be appropriately ensured.

The light guide member 32 guides the illumination light beam EL1 emitted from the light source section 31 to the illumination optical system IL. The light guide member 32 is configured by a relay module using an optical fiber or a mirror. When a plurality of light guide members 32 are provided in the illumination optical system IL, the light guide member 32 separates the illumination light beams EL1 from the light source unit 31 into a plurality of light guides and guides the plurality of illumination light beams EL1 to the plurality of illumination optical systems IL. In addition, when the light guide member 32 is, for example, a laser beam emitted from the light source section 31, a polarization maintaining fiber (Polarization Maintaining Fiber) can be used as the optical fiber, and the polarization maintaining fiber is guided while maintaining the polarization of the laser light. Light.

Here, as shown in FIG. 3, the exposure apparatus U3 of the first embodiment is an exposure apparatus of a so-called multi-lens method. In addition, FIG. 3 shows a plan view of the illumination region IR on the mask M held by the mask holding cylinder 21 viewed from the −Z side (the left view in FIG. 3), and the substrate support circle viewed from the + Z side. A plan view of the projection area PA on the substrate P supported by the barrel 25 (the figure on the right in FIG. 3). Symbol Xs in FIG. 3 represents the moving direction (rotation direction) of the mask holding cylinder 21 and the substrate supporting cylinder 25. The multi-lens type exposure device U3 is provided on the mask M (for example, six in the first embodiment). The illumination areas IR1 to IR6 respectively illuminate the illumination beam EL1, and each illumination beam EL1 is in each illumination area IR1. The plurality of projection light beams EL2 obtained by the reflection of ~ IR6 are projected and exposed to a plurality of projection areas PA1 to PA6 (for example, six in the first embodiment) on the substrate P.

First, a plurality of illumination areas IR1 to IR6 illuminated by the illumination optical system IL will be described. As shown in the left diagram of FIG. 3, the plurality of illumination areas IR1 to IR6 are arranged in two rows in the rotation direction via the center plane CL, and the odd-numbered first illumination areas IR1 and IR1 are arranged on the mask M on the upstream side in the rotation direction. The third illumination region IR3 and the fifth illumination region IR5 are arranged on the mask M on the downstream side in the rotation direction with an even-numbered second illumination region IR2, a fourth illumination region IR4, and a sixth illumination region IR6.

Each of the illumination areas IR1 to IR6 is an area having an elongated trapezoid (rectangular) shape with parallel short sides and long sides extending in the axial direction (Y direction) of the mask M. At this time, each of the illumination areas IR1 to IR6 of the trapezoid is an area whose short side is located on the side of the central plane CL and whose long side is located outside. The odd-numbered first illumination area IR1, the third illumination area IR3, and the fifth illumination area IR5 are arranged at predetermined intervals in the axial direction. In addition, the even-numbered second illumination area IR2, the fourth illumination area IR4, and the sixth illumination area IR6 are also arranged at predetermined intervals in the axial direction. At this time, the second illumination area IR2 is arranged between the first illumination area IR1 and the third illumination area IR3 in the axial direction. Similarly, the third illumination region IR3 is arranged between the second illumination region IR2 and the fourth illumination region IR4 in the axial direction. The fourth illumination area IR4 is arranged between the third illumination area IR3 and the fifth illumination area IR5 in the axial direction. The fifth illumination area IR5 is arranged between the fourth illumination area IR4 and the sixth illumination area IR6 in the axial direction. Each of the illumination areas IR1 to IR6 is arranged so that the triangular portions of the hypotenuses of the adjacent trapezoidal illumination areas overlap each other as viewed from the circumferential direction of the mask M. In the first embodiment, each of the illumination areas IR1 to IR6 is formed as a trapezoidal area, but it may be formed as a rectangular area.

The photomask M includes a pattern forming area A3 in which a photomask pattern is formed, and a pattern non-forming area A4 in which a photomask pattern is not formed. The pattern non-formation area A4 is a non-reflective area that absorbs the illumination light beam EL1 and is arranged to surround the pattern formation area A3 in a frame shape. The first to sixth illumination areas IR1 to IR6 are arranged so as to cover the full width in the Y direction of the pattern forming area A3.

The illumination optical system IL is provided with a plurality of illumination areas IR1 to IR6 (for example, six in the first embodiment). A plurality of illumination optical systems IL1 to IL6 respectively emit an illumination light beam EL1 from the light source device 13. Each illumination optical system IL1 to IL6 guides each illumination beam EL1 incident from the light source device 13 to each illumination region IR1 to IR6. That is, the first illumination optical system IL1 guides the illumination light beam EL1 to the first illumination area IR1. Similarly, the second to sixth illumination optical systems IL2 to IL6 guide the illumination light beam EL1 to the second to sixth illumination area IR2. ~ IR6. The plurality of illumination optical systems IL1 to IL6 are arranged in two rows in the circumferential direction of the mask M with the center plane CL interposed therebetween. A plurality of illumination optical systems IL1 to IL6 are arranged on the side (the left side in FIG. 2) of the first, third, and fifth illumination areas IR1, IR3, and IR5 across the center plane CL (the left side of FIG. 2). The illumination optical system IL3 and the fifth illumination optical system IL5. The first illumination optical system IL1, the third illumination optical system IL3, and the fifth illumination optical system IL5 are arranged at predetermined intervals in the Y direction. In addition, a plurality of illumination optical systems IL1 to IL6 are disposed on the side (right side of FIG. 2) of the second, fourth, and sixth illumination areas IR2, IR4, and IR6 (the right side in FIG. 2) across the center plane CL. The fourth illumination optical system IL4 and the sixth illumination optical system IL6. The second illumination optical system IL2, the fourth illumination optical system IL4, and the sixth illumination optical system IL6 are arranged at predetermined intervals in the Y direction. At this time, the second illumination optical system IL2 is disposed between the first illumination optical system IL1 and the third illumination optical system IL3 in the axial direction. Similarly, the third illumination optical system IL3 is disposed between the second illumination optical system IL2 and the fourth illumination optical system IL4 in the axial direction. The fourth illumination optical system IL4 is arranged between the third illumination optical system IL3 and the fifth illumination optical system IL5 in the axial direction. The fifth illumination optical system IL5 is disposed between the fourth illumination optical system IL4 and the sixth illumination optical system IL6 in the axial direction. In addition, the first illumination optical system IL1, the third illumination optical system IL3, and the fifth illumination optical system IL5, the second illumination optical system IL2, the fourth illumination optical system IL4, and the sixth illumination optical system IL6 are viewed from the Y direction. It is symmetrically arranged with the center plane CL as the center.

Next, each of the illumination optical systems IL1 to IL6 will be described with reference to FIG. 4. Since each of the illumination optical systems IL1 to IL6 has the same configuration, the first illumination optical system IL1 (hereinafter, simply referred to as the illumination optical system IL) will be described as an example.

In order to illuminate the illumination area IR (the first illumination area IR1) with uniform illumination, the illumination optical system IL is suitable for forming a light source image (real image or virtual image) formed by the light source device 13 on a pupil position of the illumination optical system IL (equivalent to Fourier Conversion surface) of the Kohler illumination method. The illumination optical system IL is an oblique illumination system using a polarizing beam splitter PBS. The illumination optical system IL includes an illumination optical module ILM, a polarizing beam splitter PBS, and a quarter-wave plate 41 in this order from the incident side of the illumination light beam EL1 from the light source device 13.

As shown in FIG. 4, the illumination optical module ILM includes a collimating lens 51, a fly-eye lens 52, a plurality of condenser lenses 53, a cylindrical lens 54, and an illumination field diaphragm in order from the incident side of the illumination beam EL1. 55 and a plurality of relay lenses 56 are disposed on the first optical axis BX1. A collimator lens 51 is provided on the emission side of the light guide member 32 of the light source device 13. The optical axis of the collimator lens 51 is arranged on the first optical axis BX. The collimator lens 51 irradiates the entire surface of the entrance side of the fly-eye lens 52. The fly-eye lens 52 is provided on the exit side of the collimator lens 51. The center of the surface on the exit side of the fly-eye lens 52 is arranged on the first optical axis BX1. The fly-eye lens 52 is constituted by a plurality of rod lenses, etc., and a plurality of point light source images (collecting points) after the illumination beam EL1 from the collimator lens 51 is subdivided by each rod lens are generated by the fly-eye lens 52 and emitted The side surface, and the illumination light beam EL1 which is subdivided by the rod lens enters the condenser lens 53. At this time, the surface of the exit side of the fly-eye lens 52 that generates the point light source image passes through the fly-eye lens 52 through the illumination field diaphragm 55 to various lenses of the first concave mirror 72 of the projection optical system PL described later, and is arranged to be the same as the first concave mirror The pupil plane of the projection optical system PL (PLM) where the reflecting surface of 72 is optically conjugated. The condenser lens 53 is provided on the exit side of the fly-eye lens 52. The optical axis of the condenser lens 53 is arranged on the first optical axis BX1. The condenser lens 53 condenses the illumination light beam EL1 from the fly-eye lens 52 onto the cylindrical lens 54. The cylindrical lens 54 is a plano-convex cylindrical lens having a flat entrance side and a convex exit side. The cylindrical lens 54 is provided at the emission lens of the condenser lens 53. The optical axis of the cylindrical lens 54 is arranged on the first optical axis BX1. The cylindrical lens 54 diffuses the illumination light beam EL1 in a direction orthogonal to the first optical axis BX1 in the XZ plane. The illumination field diaphragm 55 is disposed adjacent to the emission measurement of the cylindrical lens 54. The opening of the illumination field diaphragm 55 is formed in a trapezoidal shape or a rectangular shape having the same shape as the illumination area IR, and the center of the opening portion of the illumination field diaphragm 55 is arranged on the first optical axis BX1. At this time, the illumination field diaphragm 55 is arranged on a surface optically conjugate to the illumination region IR on the mask M through various lenses from the illumination field diaphragm 55 to the mask M. The relay lens 56 is provided at the emission measurement of the illumination field diaphragm 55. The optical axis of the relay lens 56 is arranged on the first optical axis BX1. The relay lens 56 causes the illumination beam EL1 from the illumination field diaphragm 55 to enter the polarizing beam splitter PBS.

When the illumination light beam EL1 enters the illumination optical module ILM, the illumination light beam EL1 becomes a comprehensive light beam irradiated on the incidence side of the fly-eye lens 52 due to the collimator lens 51. The illumination light beam EL1 incident on the fly-eye lens 52 becomes an illumination light beam EL1 from each of a plurality of point light source images, and enters the cylindrical lens 54 through the condenser lens 53. The illuminating light beam EL1 incident on the cylindrical lens 54 is diverged in the XZ plane in a direction orthogonal to the first optical axis BX1. The illumination beam EL1 emitted by the cylindrical lens 54 is incident on the illumination field diaphragm 55. The illumination light beam EL1 incident on the illumination field diaphragm 55 passes through the opening of the illumination field diaphragm 55 and becomes a light beam having the same intensity distribution as that of the illumination region IR. The illumination light beam EL1 passing through the illumination field diaphragm 55 passes through the relay lens 56 and enters the polarizing beam splitter PBS.

The polarizing beam splitter PBS is disposed between the illumination optical module ILM and the center plane CL in the X-axis direction. The polarizing beam splitter PBS cooperates with the 1/4 wavelength plate 41 to reflect the illumination light beam EL1 from the illumination optical module ILM, and on the other hand, transmits the projection light beam EL2 reflected by the mask M. In other words, the illumination beam EL1 from the illumination optical module ILM enters the polarizing beam splitter PBS as a reflected beam, and the projection beam (reflected light) EL2 from the mask M enters the polarizing beam splitter PBS as a penetrating beam. In other words, the illumination beam EL1 entering the polarizing beam splitter PBS becomes a linearly polarized reflected beam of S polarization, and the projection beam EL2 entering the polarizing beam splitter PBS becomes a linearly polarized transmitted beam of P polarization. .

As shown in FIG. 4, the polarizing beam splitter PBS includes first 稜鏡 91, second 稜鏡 92, and a polarization separation surface 93 provided between the first 稜鏡 91 and the second 稜鏡 92. The first 稜鏡 91 and the second 稜鏡 92 are made of quartz glass, and are triangular triangles in the XZ plane. The polarizing beam splitter PBS is joined by the first 稜鏡 91 and the second 稜鏡 92 of the triangle with the polarization separating surface 93 interposed therebetween, and becomes a quadrangle in the XZ plane.

The first 稜鏡 91 series is the entrance side of the illumination light beam EL1 and the projection light beam EL2. The second 稜鏡 92 is the 稜鏡 of the exit side of the projection light beam EL2 that penetrates the polarization separation surface 93. On the polarization separation surface 93, an illumination light beam EL1 and a projection light beam EL2 from the first 稜鏡 91 to the second 稜鏡 92 are incident. The polarized light separation surface 93 reflects the S-polarized (linearly polarized) illumination light beam EL1 and transmits the P-polarized (linearly polarized) projection light beam EL2.

The 1/4 wavelength plate 41 is disposed between the polarizing beam splitter PBS and the mask M. The quarter-wave plate 41 converts the illumination light beam EL1 reflected by the polarizing beam splitter PBS from linearly polarized light (S-polarized light) to circularly polarized light. The circularly polarized illumination light beam EL1 irradiates the mask M. The 1/4 wavelength plate 41 converts the circularly polarized projection light beam EL2 reflected by the mask M into linearly polarized light (P-polarized light).

Next, a plurality of projection areas PA1 to PA6 exposed by projection optical system PL projection will be described. As shown in the right diagram of FIG. 3, the plurality of projection areas PA1 to PA6 on the substrate P are arranged corresponding to the plurality of illumination areas IR1 to IR6 on the mask M. That is, the plurality of projection areas PA1 to PA6 on the substrate P are arranged in two rows in the conveying direction across the center plane CL, and the odd-numbered first projection areas PA1 and third projections are arranged on the substrate P on the upstream side in the conveying direction. In the area PA3 and the fifth projection area PA5, an even-numbered second projection area PA2, a fourth projection area PA4, and a sixth projection area PA6 are arranged on the substrate P on the downstream side in the conveying direction.

Each of the projection areas PA1 to PA6 is an elongated trapezoidal area having short sides and long sides extending in the width direction (Y direction) of the substrate P. Here, each of the projection areas PA1 to PA6 of the trapezoid is an area whose short side is located on the center plane CL side and whose long side is located outside. The odd-numbered first projection area PA1, the third projection area PA3, and the fifth projection area PA5 are arranged at predetermined intervals in the width direction. In addition, the even-numbered second projection area PA2, the fourth projection area PA4, and the sixth projection area PA6 are also arranged at predetermined intervals in the width direction. At this time, the second projection area PA2 is arranged between the first projection area PA1 and the third projection area PA3 in the axial direction. Similarly, the third projection area PA3 is arranged between the second projection area PA2 and the fourth projection area PA4 in the axial direction. The fourth projection area PA4 is arranged between the third projection area PA3 and the fifth projection area PA5. The fifth projection area PA5 is disposed between the fourth projection area PA4 and the sixth projection area PA6. Each of the projection areas PA1 to PA6 is the same as each of the illumination areas IR1 to IR6. When viewed from the conveying direction of the substrate P, the triangular portions of the hypotenuse of the adjacent trapezoidal projection area PA are arranged to overlap. At this time, the projection area PA has substantially the same shape as the exposure amount in the overlapping area of the adjacent projection area PA and the exposure amount in the non-repeating area. The first to sixth projection areas PA1 to PA6 are arranged so as to cover the full width in the Y direction of the exposure area A7 exposed on the substrate P.

Here, in Figure 2, when viewed in the XZ plane, the perimeter from the center point of the illumination area IR1 (and IR3, IR5) on the mask M to the center point of the illumination area IR2 (and IR4, IR6) is set to The perimeter from the center point of the projection area PA1 (and PA3, PA5) on the substrate P running along the support surface P2 to the center point of the second projection area PA2 (and PA4, PA6) is substantially the same.

The projection optical system PL in the first embodiment described above is provided with six projection areas PA1 to PA6. In the projection optical systems PL1 to PL6, a plurality of projection light beams EL2 reflected by each of the mask patterns located in the corresponding illumination areas IR1 to IR6 are incident respectively. Each projection optical system PL1 to PL6 guides each projection light beam EL2 reflected by the mask M to each projection area PA1 to PA6. That is, the first projection optical system PL1 guides the projection light beam EL2 from the first illumination area IR1 to the first projection area PA1. Similarly, the second to sixth projection optical systems PL2 to PL6 will come from the second to sixth. Each of the projection light beams EL2 in the illumination areas IR2 to IR6 is guided to the second to sixth projection areas PA2 to PA6.

The plurality of projection optical systems PL1 to PL6 are arranged in two rows in the circumferential direction of the mask M with the center plane CL interposed therebetween. The plurality of projection optical systems PL1 to PL6 sandwich the center plane CL, and the first projection optical system PL1 and the third projection are arranged on the side where the first, third, and fifth projection areas PA1, PA3, and PA5 are arranged (the left side of FIG. 2). Optical system PL3 and fifth projection optical system PL5. The first projection optical system PL1, the third projection optical system PL3, and the fifth projection optical system PL5 are arranged at predetermined intervals in the Y direction. In addition, a plurality of illumination optical systems IL1 to IL6 sandwich the center plane CL, and the second projection optical system PL2, the second projection optical system PL2, and 4 projection optical system PL4 and 6th projection optical system PL6. The second projection optical system PL2, the fourth projection optical system PL4, and the sixth projection optical system PL6 are arranged at predetermined intervals in the Y direction. Here, the second projection optical system PL2 is disposed between the first projection optical system PL1 and the third projection optical system PL3 in the axial direction. Similarly, the third projection optical system PL3 is disposed between the second projection optical system PL2 and the fourth projection optical system PL4 in the axial direction. The fourth projection optical system PL4 is disposed between the third projection optical system PL3 and the fifth projection optical system PL5. The fifth projection optical system PL5 is disposed between the fourth projection optical system PL4 and the sixth projection optical system PL6. The first projection optical system PL1, the third projection optical system PL3, and the fifth projection optical system PL5, the second projection optical system PL2, the fourth projection optical system PL4, and the sixth projection optical system PL6 are viewed from the Y direction. It is symmetrically arranged with the center plane CL as the center.

Further, each of the projection optical systems PL1 to PL6 will be described with reference to FIG. 4. Since each of the projection optical systems PL1 to PL6 has the same configuration, the first projection optical system PL1 (hereinafter, simply referred to as the projection optical system PL) will be described as an example.

In the projection optical system PL, the projection light beam EL2 reflected from the illumination area IR (the first illumination area IR1) of the mask surface P1 of the mask M is incident on the middle image plane P7 to form the middle of the pattern appearing on the mask surface P1. image. The projection light beam EL2 from the mask surface P1 to the intermediate image plane P7 is set as the first projection light beam EL2a. The intermediate image formed on the intermediate image plane P7 is an inverted image that is 180 ° point symmetrical with respect to the image of the mask pattern in the illumination area IR.

The projection optical system PL re-images the projection light beam EL2 emitted from the intermediate image plane P7 on the projection area PA of the projection image plane of the substrate P to form a projection image. In addition, the projection light beam EL2 from the intermediate image plane P7 to the projection image plane of the substrate P is referred to as a second projection light beam EL2b. The projected image is an inverted image that is 180 ° point symmetrical with respect to the intermediate image of the intermediate image plane P7. In other words, the image of the mask pattern relative to the illuminated area IR becomes an upright image of the same image. This projection optical system PL has the above-mentioned 1/4 wavelength plate 41, the above-mentioned polarizing beam splitter PBS, and a projection optical module PLM in this order from the incident side of the projection light beam EL2 from the mask M.

The 1/4 wavelength plate 41 and the polarizing beam splitter PBS are used in combination with the illumination optics IL. In other words, the illumination optical system IL and the projection optical system PL share a quarter-wavelength plate 41 and a polarizing beam splitter PBS.

The first projection light beam EL2a reflected in the illumination area IR becomes a telecentric light beam that is directed outward in the radial direction of the first axis AX1 of the mask holding cylinder 21, and enters the projection optical system PL. The first projected light beam EL2a of the circularly polarized light reflected by the IR in the illumination area is incident on the projection optical system PL and converted from circularly polarized light to linearly polarized light (P polarized light) by the quarter-wave plate 41, and then enters the polarizing beam splitter PBS. . The first projection light beam EL2a that has entered the polarizing beam splitter PBS passes through the polarizing beam splitter PBS and then enters the projection optical module PLM.

As shown in FIG. 4, the projection optical module PLM includes a partial optical system 61 that forms an intermediate image on the intermediate image plane P7 and forms a projection image on the substrate P, and emits a first projection beam EL2a and a second projection beam EL2b. A reflection optical system (light-guiding optical system) 62 of the input optical system 61 and a projection field diaphragm 63 disposed on an intermediate image plane P7 forming an intermediate image. The projection optical module PLM includes a focus correction optical member 64, an image shift optical member 65, a magnification correction optical member 66, a rotation correction mechanism 67, and a polarization adjustment mechanism 68.

The partial optical system 61 and the reflective optical system 62 are, for example, telecentric refracting and refracting optical systems in which a Dyson system is deformed. In the optical system 61, the optical axis (hereinafter, referred to as the second optical axis BX2) is substantially orthogonal to the center plane CL. The partial optical system 61 includes a first lens group 71 and a first concave mirror (reflective optical member) 72. The first lens group 71 includes a plurality of lens members including a refractive lens (lens member) 71a provided on the center plane CL side, and the optical axes of the plurality of lens members are arranged on the second optical axis BX2. The first concave mirror 72 is a pupil surface imaged by a plurality of point light sources generated by the fly-eye lens 52 from the fly-eye lens 52 through various lenses of the illumination field diaphragm 55 to the first concave mirror 72.

The reflection optical system 62 includes a first deflection member (a first optical member and a first reflection member) 76, a second deflection member (a second optical member and a third reflection portion) 77, and a third deflection member (a third optical member and a first reflection member). 4 reflecting portions) 78, and a fourth deflection member (a fourth optical member and a second reflecting member) 79. The first deflecting member 76 is a mirror having a first reflecting surface P3. The first reflection surface P3 reflects the first projection light beam EL2a from the polarizing beam splitter PBS, and causes the reflected first projection light beam EL2a to enter the refractive lens 71a of the first lens group 71. The second deflecting member 77 is a mirror having a second reflecting surface P4. The second reflection surface P4 reflects the first projection light beam EL2a emitted from the refractive lens 71a, and causes the reflected first projection light beam EL2a to enter the projection field diaphragm 63 provided on the intermediate image plane P7. The third deflection member 78 is a mirror having a third reflection surface P5. The third reflecting surface P5 reflects the second projection light beam EL2b from the projection field diaphragm 63, and causes the reflected second projection light beam EL2b to enter the refractive lens 71a of the first lens group 71. The fourth deflection member 79 is a mirror having a fourth reflection surface P6. The fourth reflecting surface P6 reflects the second projection light beam EL2b emitted from the refractive lens 71a, and makes the reflected second projection light beam EL2b incident on the substrate P. As described above, the second deflecting member 77 and the third deflecting member 78 have a function of re-reflecting the first projection light beam EL2a from the partial optical system 61 and reflecting the reflected light toward the fold-back mirror of the partial optical system 61. Each of the reflection surfaces P3 to P6 of the first to fourth deflection members 76, 77, 78, and 79 are all planes parallel to the Y axis in FIG. 4 and are arranged obliquely at a predetermined angle in the XZ plane.

The projection field diaphragm 63 has an opening that defines the shape of the projection area PA. That is, the shape of the opening of the projection field diaphragm 63 defines the shape of the projection area PA.

The first projection light beam EL2a from the polarizing beam splitter PBS passes through the image shifting optical member 65 and is reflected by the first reflecting surface P3 of the first deflection member 76. The first projection light beam EL2a reflected on the first reflection surface P3 enters the first lens group 71 and passes through a plurality of lens members including the refractive lens 71a, and then enters the first concave mirror 72. At this time, the first projection light beam EL2a passes through the field of view on the upper side of the + Z direction from the second optical axis BX2 of the refractive lens 71a in the first lens group 71. The first projection light beam EL2 a incident on the first concave mirror 72 is reflected by the first concave mirror 72. The first projection light beam EL2a reflected by the first concave mirror 72 enters the first lens group 71, passes through a plurality of lens members including the refractive lens 71a, and exits from the first lens group 71. At this time, the first projection light beam EL2a passes through the field of view on the lower side of the -Z direction from the second optical axis BX2 of the refractive lens 71a in the first lens group 71. The first projection light beam EL2a emitted from the first lens group 71 is reflected on the second reflection surface P4 of the second deflection member 77. The first projection light beam EL2a reflected on the second reflection surface P4 is incident on the projection field diaphragm 63. The first projection light beam EL2a incident on the projection field diaphragm 63 forms an intermediate image of an inverted image of the mask pattern in the illumination area IR.

The second projection light beam EL2b from the projection field diaphragm 63 is reflected on the third reflection surface P5 of the third deflection member 78. The second projection light beam EL2b reflected on the third reflection surface P5 enters the first lens group 71 again, passes through a plurality of lens members including the refractive lens 71a, and enters the first concave mirror 72. At this time, the second projection light beam EL2b passes from the second optical axis BX2 of the refractive lens 71a to the upper side of the + Z direction in the first lens group 71, and the field of view between the incident side of the first projection light beam EL2a and the emission measurement. . The second projection light beam EL2 b incident on the first concave mirror 72 is reflected by the first concave mirror 72. The second projection light beam EL2b reflected by the first concave mirror 72 enters the first lens group 71 and passes through a plurality of lens members including the refractive lens 71a, and then exits from the first lens group 71. At this time, the second projection light beam EL2b passes through the first lens group 71 from the second optical axis BX2 of the refractive lens 71a to the lower side of the -Z direction, and the field of view between the incident side of the first projection light beam EL2a and the emission measurement. . The second projection light beam EL2b emitted from the first lens group 71 is reflected on the fourth reflection surface P6 of the fourth deflection member 79. The second projection light beam EL2b reflected on the fourth reflection surface P6 is projected onto the projection area PA on the substrate P by the focus correction optical member 64 and the magnification correction optical member 66. The second projection light beam EL2b projected on the projection area PA forms a projection image of an orthographic image of a mask pattern in the illumination area IR. At this time, the image of the mask pattern in the illumination area IR is projected on the projection area PA at equal magnification (× 1).

Here, the field of view of the projection optical module PLM including the first lens group 71 and the first concave mirror 72 including the refractive lens 71 a will be briefly described with reference to FIG. 5. FIG. 5 shows a state where the circular full imaging field of view (reference plane) CIF formed by the projection optical module PLM is unfolded on the YZ plane in FIG. 5, and the rectangular illumination area IR on the mask M is imaged on the intermediate image plane. The intermediate image Img on the projection field diaphragm 63 of P7, and the trapezoidal intermediate image Img2 formed by the projection field diaphragm 63 of the intermediate image plane P7, and each of the trapezoidal projection areas PA on the substrate P are set to the Y axis It is slender and arranged separately in the Z-axis direction.

First, the center of the rectangular illumination area IR on the mask M is set at a position (first position) from the center point of the full imaging field CIF (the optical axis BX2 passes) to the + Z direction and the height of the eccentric image k1. Therefore, the intermediate image Img1 formed on the projection field diaphragm 63 (intermediate image plane P7) through the first imaging light path (the first projection beam EL2a) in the projection optical module PLM is observed in the YZ plane and illuminated. The area IR is in a state where the up and down (Z direction) and the left and right (Y direction) are reversed, and the image is formed at the position (second position) of the image height value eccentric to the -Z direction from the center point of the full imaging field CIF.

The intermediate image Img2 restricts the intermediate image Img1 by the trapezoidal opening of the projection field diaphragm 63. The intermediate image Img2 is configured by the two deflection members 77 and 78 arranged before and after the projection field diaphragm 63 to bend the optical path. Therefore, when viewed in the YZ plane, the imaging is from the center point of the full imaging field CIF to + The position (third position) of the image height value k2 (k2 <k1) in the Z direction. In addition, the intermediate image Img2 restricted by the projection field diaphragm 63 passes through the second imaging light path (second projection light beam EL2b) in the projection optical module PLM, and is imaged again on a projection area formed on the substrate P Within PA.

The center point of the image re-imaged in the projection area PA, when viewed in the YZ plane, is located at an image height value k2 (k2 <k1) from the center point of the full imaging field CIF toward the -Z direction. The image re-imaged in the projection area PA is formed at equal magnifications (× 1) without reversing the left-right direction (Y direction) of the mask pattern in the illumination area IR.

As described above, in this embodiment, in order to make the imaging beam from the mask pattern easy to separate in the circular imaging field CIF space, while limiting the illumination area IR to a slender rectangular or trapezoidal area, The four deflection members 76, 77, 78, and 79 formed by a general total reflection mirror form a double pass imaging optical path in the projection optical module PLM. Therefore, the pattern on the mask M can be projected on the substrate P at least in the Y-axis direction (the connection direction of each projection image of the projection optical modules PL1 to PL6) with an equal magnification.

As described above, the first deflection member 76, the second deflection member 77, the third deflection member 78, and the fourth deflection member 79 project the incident side field of view (the first incident field of view) of the first projection light beam EL2a, the first The emission measurement field of view of the projection light beam EL2a (first emission field of view), the incidence side field of view of the second projection light beam EL2b (second incidence field of view), and the emission field of view (second emission field of view) of the second projection beam EL2b, in The reflection optical system 62 is separated. Therefore, since the reflection optical system 62 has a configuration in which leakage light is unlikely to occur when the light is guided by the first projection light beam EL2a, the reflection optical system 62 has a function of a light amount reducing section that reduces the amount of leaked light light projected onto the substrate P. The leakage light is, for example, scattered light generated by scattering of the first projection light beam EL2a, or separated light generated by separation of the first projection light beam EL2a, or reflected light generated by reflection of a part of the first projection light beam EL2a. .

Here, the reflection optical system 62 is located in the Z direction, and is provided in the order of the first deflection member 76, the third deflection member 78, the fourth deflection member 79, and the second deflection member 77 from the upper side. Therefore, the first projection light beam EL2a incident on the refractive lens 71a of the first lens group 71 is incident on the side close to the illumination region IR (the upper side of the refractive lens 71a). The second projection light beam EL2b emitted from the refractive lens 71a of the first lens group 71 is emitted from the side close to the projection area PA (the lower side of the refractive lens 71a). Therefore, the distance between the illumination area IR and the first deflecting member 76 can be shortened, and the distance between the projection area PA and the fourth deflecting member 79 can be shortened, so that the projection optical system PL can be made more compact. As shown in FIG. 4, the third deflection member 78 is disposed between the first deflection member 76 and the fourth deflection member 79 in a direction (Z direction) along the full imaging field CIF. In addition, the positions of the first deflection member 76 and the fourth deflection member 79 and the positions of the second deflection member 77 and the third deflection member 78 are different from each other in the direction of the second optical axis BX2.

In addition, the reflective optical system 62 has four fields of view, namely, the first field of view, the first field of view, the second field of view, and the second field of view (equivalent to IR, Img1, Img2, and PA shown in FIG. 5). Therefore, in order to prevent the projection light beam EL2 from repeating in 4 fields of view, the size of the projection area PA is preferably made to a predetermined size. That is, the length of the projection area PA in the scanning direction of the substrate P and the width direction of the substrate P orthogonal to the scanning direction are equal to the length in the scanning direction / the length in the width direction ≦ 1/4. Therefore, the reflective optical system 62 can guide the partial projection optical beam EL2 to the partial optical system 61 without causing the projection optical beam EL2 to overlap in four fields of view.

In addition, the first deflection member 76, the second deflection member 77, the third deflection member 78, and the fourth deflection member 79 are formed in a slit-like first shot field, first shot field, and second shot field. And the 4th field of view of the second emission field (equivalent to IR, Img1, Img2, PA shown in Figure 5) are corresponding rectangles, and are in the width direction of the slit of the full imaging field CIF ( (Z direction).

The focus correction optical member 64 is disposed between the fourth deflection member 79 and the substrate P. The focus correction optical member 64 adjusts the focus state of the mask pattern image projected on the substrate P. The focus correcting optical member 64 is, for example, a pair of two wedge-shaped ridges inverted (inverted in the X direction in FIG. 4) superimposed into a parallel flat plate that is transparent as a whole. The thickness of the parallel flat plate can be changed by sliding the pair of slugs toward the slope without changing the interval between the faces facing each other. According to this, the effective optical path length of some optical systems 61 can be fine-tuned, and the focusing state of the mask pattern image formed on the intermediate image plane P7 and the projection area PA can be fine-tuned.

The image shift optical member 65 is disposed between the polarizing beam splitter PBS and the first polarizing member 76. The image shift optical member 65 can adjust the image of the mask pattern projected on the substrate P to move within the image plane. The image shift optical member 65 is composed of a transparent parallel plate glass that can be tilted in the XZ plane in FIG. 4 and a transparent parallel plate glass that can be tilted in the YZ plane in FIG. 4. By adjusting the inclination amounts of the two parallel flat glass plates, the images of the mask pattern formed on the intermediate image plane P7 and the projection area PA can be slightly shifted in the X direction and the Y direction.

The magnification correction optical member 66 is disposed between the fourth deflection member 79 and the substrate P. The magnification correction optical member 66 is constituted by, for example, arranging three concave lenses, convex lenses, and concave lenses coaxially at a predetermined interval, and fixing the front and rear concave lenses, and the convex lenses in between can be moved in the direction of the optical axis (principal light). According to this, the image of the mask pattern formed in the projection area PA can be enlarged or reduced isotropically while maintaining the telecentric imaging state. In addition, the optical axes of the three lens groups constituting the magnification correction optical member 66 are inclined in the XZ plane and are parallel to the main ray of the projection light beam EL2 (second projection light beam EL2b).

The rotation correction mechanism 67 is, for example, an actuator (not shown) that rotates the second deflection member 77 slightly around an axis that is parallel (or perpendicular) to the second optical axis BX2. The rotation correction mechanism 67 rotates the second deflection member 77 to rotate the image of the mask pattern formed on the intermediate image plane P7 slightly within the plane P7.

The polarization adjustment mechanism 68 is, for example, an actuator (not shown) that rotates the 1/4 wavelength plate 41 about an axis orthogonal to the plate surface to adjust the polarization direction. The polarization adjustment mechanism 68 can adjust the illuminance of the projection light beam EL2 (the second projection light beam EL2b) projected on the projection area PA by rotating the 1/4 wavelength plate 41.

In the projection optical system PL configured in this manner, the first projection light beam EL2a from the mask M is emitted from the illumination area IR toward the normal direction of the mask surface P1 (the radial direction centered on the first axis AX1) and passes through The 1/4 wavelength plate 41, the polarizing beam splitter PBS, and the image shifting optical member 65 are incident on the reflection optical system 62. The first projection light beam EL2a incident on the reflection optical system 62 is reflected by the first reflection surface P3 of the first deflection member 76 of the reflection optical system 62 and enters a part of the optical system 61. The first projection light beam EL2 a incident on the partial optical system 61 is reflected by the first concave mirror 72 through the first lens group 71 of the partial optical system 61. The first projection light beam EL2 a reflected by the first concave mirror 72 is again emitted from the partial optical system 61 through the first lens group 71. The first projection light beam EL2a emitted from the partial optical system 61 is reflected by the second reflection surface P4 of the second deflection member 77 of the reflective optical system 62 and enters the projection field diaphragm 63. The second projection light beam EL2b passing through the projection field diaphragm 63 is reflected by the third reflection surface P5 of the third deflection member 78 of the reflection optical system 62 and enters a part of the optical system 61 again. The second projection light beam EL2 b that has entered the partial optical system 61 is reflected by the first concave mirror 72 through the first lens group 71 of the partial optical system 61. The second projection light beam EL2 b reflected by the first concave mirror 72 is again emitted from the partial optical system 61 through the first lens group 71. The second projection light beam EL2b emitted from the partial optical system 61 is reflected by the fourth reflecting surface P6 of the fourth deflection member 79 of the reflective optical system 62, and enters the focus correction optical member 64 and the magnification correction optical member 66. The second projection light beam EL2b emitted from the magnification correction optical member 66 is incident on the projection area PA on the substrate P, and the image of the mask pattern appearing in the illumination area IR is projected on the projection area PA at equal magnification (× 1). .

<Element Manufacturing Method>

Next, a device manufacturing method will be described with reference to FIG. 6. Fig. 6 is a flowchart showing a device manufacturing method according to the first embodiment.

The device manufacturing method shown in FIG. 6 firstly performs a function and performance design of a display panel formed using, for example, an organic EL or the like, and designs a circuit pattern and a wiring pattern required by CAD or the like (step S201). Next, a mask M of a desired layer amount is produced based on various patterns of each layer designed by CAD or the like (step S202). A supply roll FR1 on which a flexible substrate P (resin film, metal foil film, plastic, etc.) as a base material of the display panel is wound is prepared (step S203). In addition, the roll-shaped substrate P prepared in this step S203 may be one whose surface has been modified as necessary, or which has been previously formed with a bottom layer (for example, through minute irregularities of an imprint method), or laminated with light in advance. Inductive functional film or transparent film (insulating material).

Next, an electrode constituting a display panel element or a substrate layer composed of wiring, an insulating film, a TFT (thin film semiconductor), and the like is formed on the substrate P, and a light emission composed of a self-emitting element such as an organic EL is laminated on the substrate. Layer (display pixel portion) (step S204). In this step S204, although the conventional lithography process is used to expose the photoresist layer using the exposure device U3 described in the previous embodiments, it also includes a substrate P pattern coated with a photosensitive silane coupling agent instead of the photoresist. Exposure comes from an exposure process that forms a water-repellent pattern on the surface, a wet process that exposes a photo-sensitive catalyst layer pattern, and forms a metal film pattern (wiring, electrodes, etc.) by electroless plating, or a process that contains silver Processing such as printing process for drawing patterns such as conductive ink of rice particles.

Next, for each display panel element that is continuously manufactured on the long substrate P by a roll method, the substrate P is cut, or a protective film (environmental barrier layer) or a color filter film is laminated on the surface of each display panel element. The components are assembled (step S205). Next, a step of checking whether the display panel element can operate normally or whether it satisfies the desired performance and characteristics is performed (step S206). Through the above method, a display panel (flexible display) can be manufactured.

As described above, the first embodiment can make the first incident field of view, the first incident field of view, the second incident field of view, and the reflective optical system 62 in cooperation with the projection optical system PL (projection optical module PLM). Since the second emission fields of view are separated from each other, leakage of light from the first projection light beam EL2a can be suppressed. Since the reflective optical system 62 can be configured so that leaked light is not easily projected on the substrate P, it is possible to prevent the quality of the image projected and exposed on the substrate P from being deteriorated.

In addition, in the first embodiment, the projection area PA can be set to have a length in the scanning direction / length in the width direction ≦ 1/4. Therefore, in the field of view of the first projection beam EL2a and the second projection beam EL2b of the reflection optical system 62, That is, the first injection field of view, the first injection field of view, the second injection field of view, and the second injection field of view can be separated without overlapping.

In addition, since the laser light can be used as the illumination light beam EL1 in the first embodiment, it is very suitable for securing the illuminance of the second projection light beam EL2b projected on the projection area PA.

In the first embodiment, the positions of the first projection light beam EL2a and the second projection light beam EL2b entering the refractive lens 71a are set above the refractive lens 71a, and the first projection light beam EL2a emitted from the refractive lens 71a is used. The position of the second projection light beam EL2b is the lower side of the refractive lens 71a. However, as long as the first incident field of view, the first incident field of view, the second incident field of view, and the second incident field of view can be separated from each other, the incident positions of the first projection beam EL2a and the second projection beam EL2b with respect to the refractive lens 71a And the injection position is not particularly limited.

[Second Embodiment]

Next, an exposure apparatus U3 of the second embodiment will be described with reference to Fig. 7. In addition, in the second embodiment, in order to avoid overlapping descriptions with the first embodiment, the description is different from the first embodiment, and the same constituent elements as those in the first embodiment are given the same as those in the first embodiment. The same symbols are used for explanation. FIG. 7 is a diagram showing the configuration of the illumination optical system and the projection optical system of the exposure apparatus according to the second embodiment. In the exposure apparatus U3 of the first embodiment, the field of view is separated in the reflection optical system 62 of the projection optical system PL, so that leakage light is hardly generated. In the exposure apparatus U3 of the second embodiment, in the reflection optical system 100 of the projection optical system PL, the imaging position of the projection image formed by the projection light beam EL2 and the imaging position of the defective image formed by the leaked light are on the substrate. The scanning directions of P are different.

In the exposure apparatus U3 of the second embodiment, the projection optical system PL has a 1/4 wavelength plate 41, a polarizing beam splitter PBS, and a projection optical module PLM in order from the incident side of the projection light beam EL2 from the mask M. The projection optical module PLM includes a partial optical system 61, a reflective optical system (light guide optical system) 100, and a projection field diaphragm 63. The projection optical module PLM includes a focus correction optical member 64, an image shift optical member 65, a magnification correction optical member 66, a rotation correction mechanism 67, and a polarization adjustment mechanism 68, as in the first embodiment. The 1/4 wavelength plate 41, the polarizing beam splitter PBS, the partial optical system 61, the projection field diaphragm 63, the focus correction optical member 64, the image shift optical member 65, the magnification correction optical member 66, and the rotation correction mechanism 67 and the polarization adjustment mechanism 68 have the same configuration, and therefore descriptions thereof are omitted.

The reflection optical system 100 includes a first polarizing beam splitter (first reflecting member) PBS1, a second polarizing beam splitter (second reflecting member) PBS2, a 1/2 wavelength plate 104, and a first polarizing member (first optical member And third reflecting portion) 105, a second deflecting member (second optical member and fourth reflecting portion) 106, a first light shielding plate 111, and a second light shielding plate 112. The first polarization beam splitter PBS1 includes a first polarization separation surface P10. The first polarized light separation surface P10 reflects the first projection light beam EL2a from the polarizing beam splitter PBS1, and causes the reflected first projection light beam EL2a to enter the refractive lens 71a of the first lens group 71. In addition, the first polarized light separation plane P10 penetrates the second projection light beam EL2b from the intermediate image plane P7, and makes the transmitted second projection light beam EL2b enter the refractive lens 71a of the first lens group 71. The second polarization beam splitter PBS2 includes a second polarization separation surface P11. The second polarized light separation surface P11 transmits the first projection light beam EL2a from the refractive lens 71a of the first lens group 71, and makes the transmitted first projection light beam EL2a enter the first deflection member 105. The second polarized light separation surface P11 reflects the second projection light beam EL2b from the refractive lens 71a of the first lens group 71, and makes the reflected second projection light beam EL2b incident on the substrate P. The 1/2 wavelength plate 104 converts the first projection light beam EL2a of the S-polarized light reflected by the first polarization beam splitter PBS1 into the first projection light beam EL2a of the P-polarized light. In addition, the 1/2 wavelength plate 104 converts the second projection light beam EL2b of the P-polarized light that has passed through the first polarization beam splitter PBS1 into the second projection light beam EL2b of the S-polarized light. The first deflecting member 105 is a mirror having a first reflecting surface P12. The first reflection surface P12 reflects the first projection light beam EL2a transmitted through the second polarizing beam splitter PBS2, and causes the reflected first projection light beam EL2a to enter the projection field diaphragm 63 provided on the intermediate image plane P7. The second deflecting member 106 is a mirror having a second reflecting surface P13. The second reflecting surface P13 reflects the second projection light beam EL2b from the projection field diaphragm 63, and causes the reflected second projection light beam EL2b to enter the first polarizing beam splitter PBS1. As described above, the functions of the first deflecting member 105 and the second deflecting member 106 are reflected mirrors that reflect the first projection light beam EL2a from the partial optical system 61 and return to the partial optical system 61 again.

In addition, since the first polarizing beam splitter PBS1 is provided in the reflection optical system 100, in order to reflect the P-polarized projection beam transmitted through the polarizing beam splitter PBS at the first polarizing beam splitter PBS1, the polarizing beam splitter PBS A half-wavelength plate 107 is provided to the first polarizing beam splitter PBS1.

The first light shielding plate 111 is provided between the second polarizing beam splitter PBS2 and the substrate P. The first light-shielding plate 111 is a reflected light that is provided on a portion of the first projection light beam EL2a that can be incident on the second polarized beam splitter PBS2 and does not penetrate the second polarized light separation plane P11 of the second polarized beam splitter PBS2 ( Leaking light).

The second light shielding plate 112 is radiated between the first polarizing beam splitter PBS1 and the second polarizing beam splitter PBS2. The second light shielding plate 112 shields light leaking from the first polarizing beam splitter PBS1 to the second polarizing beam splitter PBS2.

The first projection light beam EL2a of P-polarized light from the polarizing beam splitter PBS passes through the half-wavelength plate 107 after passing through the image shifting optical member 65. The first projection light beam EL2a transmitted through the 1/2 wavelength plate 107 is converted into S-polarized light, and then enters the first polarized beam splitter PBS1. The first projection light beam EL2a that has entered the S-polarized light of the first polarized beam splitter PBS1 is reflected by the first polarized light separation plane P10 of the first polarized beam splitter PBS1. The first projection light beam EL2a of the S-polarized light reflected on the first polarized light separation plane P10 passes through the half-wavelength plate 104. The first projection light beam EL2a transmitted through the 1/2 wavelength plate 104 is converted into P-polarized light and is incident on the first lens group 71. The first projection light beam EL2a incident on the first lens group 71 passes through a plurality of lens members including the refractive lens 71a, and then enters the first concave mirror 72. At this time, the first projection light beam EL2a passes through the field of view (first incident field of view) above the refractive lens 71a in the first lens group 71. The first projection light beam EL2 a incident on the first concave mirror 72 is reflected by the first concave mirror 72. The first projection light beam EL2a reflected by the first concave mirror 72 enters the first lens group 71, passes through a plurality of lens members including the refractive lens 71a, and exits from the first lens group 71. At this time, the first projection light beam EL2a passes through the field of view (first emission field of view) below the refractive lens 71a in the first lens group 71. The first projection light beam EL2a emitted from the first lens group 71 enters the second polarizing beam splitter PBS2. The first projection light beam EL2a of the P-polarized light that has entered the second polarized beam splitter PBS2 passes through the second polarized light separation surface P11. The first projection light beam EL2a passing through the second polarization separation surface P11 enters the first polarization member 105 and is reflected by the first reflection surface P12 of the first polarization member 105. The first projection light beam EL2a reflected on the first reflection surface P12 is incident on the projection field diaphragm 63. The first projection light beam EL2a incident on the projection field diaphragm 63 forms an intermediate image of an inverted image of the mask pattern in the illumination area IR.

The second projection light beam EL2b from the projection field diaphragm 63 is reflected on the second reflection surface P13 of the second deflection member 106. The second projection light beam EL2b reflected on the second reflection surface P13 is incident on the first polarizing beam splitter PBS1. The second projection light beam EL2b of the P polarized light that has entered the first polarized beam splitter PBS1 passes through the first polarized light separation surface P10. The second projection light beam EL2b that has passed through the P-polarized light passing through the first polarized light separation plane P10 passes through the half-wavelength plate 104. The second projection light beam EL2b transmitted through the 1/2 wavelength plate 104 is converted into S-polarized light, and then enters the first lens group 71. The second projection light beam EL2b that has entered the first lens group 71 passes through a plurality of lens members including the refractive lens 71a, and then enters the first concave mirror 72. At this time, the second projection light beam EL2b passes through the field of view (second incident field of view) above the refractive lens 71a in the first lens group 71. The second projection light beam EL2 b incident on the first concave mirror 72 is reflected by the first concave mirror 72. The second projection light beam EL2b reflected by the first concave mirror 72 enters the first lens group 71, passes through a plurality of lens members including the refractive lens 71a, and exits from the first lens group 71. At this time, the second projection light beam EL2b passes through the field of view (second emission field of view) below the refractive lens 71a in the first lens group 71. The second projection light beam EL2b emitted from the first lens group 71 is incident on the second polarizing beam splitter PBS2. The second projection light beam EL2b of the S-polarized light that has entered the second polarized beam splitter PBS2 is reflected on the second polarized light separation plane P11. The second projection light beam EL2b reflected on the second polarization separation surface P11 passes through the focus correction optical member 64 and the magnification correction optical member 66, and is projected onto the projection area PA on the substrate P. The second projection light beam EL2b projected on the projection area PA forms a projection image of an orthographic image of a mask pattern in the illumination area IR. At this time, the image of the mask pattern in the illumination area IR is projected on the projection area PA at equal magnification (× 1).

Here, the first polarizing beam splitter PBS1, the second polarizing beam splitter PBS2, the first polarizing member 105, and the second polarizing member 106 are arranged so as to be formed by the second projection light beam EL2b reflected by the second polarizing beam splitter PBS2. The imaging position of the projected image is different from the imaging position of the defective image formed by the partial leakage light of the first projection light beam EL2a reflected by the second polarizing beam splitter PBS2 in the scanning direction of the substrate P. Specifically, the first polarized light is arranged so that the incident position of the first projection beam EL2a and the incident position of the second projection beam EL2b are different from the first polarized light separation plane P10 of the first polarized beam splitter PBS1. The beam splitter PBS1, the second polarizing beam splitter PBS2, the first polarizing member 105, and the second polarizing member 106. With this arrangement, the incident position of the second projection beam EL2b and the incident position of the first projection beam EL2a can be made different from the incident position of the second projection beam EL2a with respect to the second polarization separation surface P11 of the second polarization beam splitter PBS2. In this way, the imaging position of the projected image of the second projection light beam EL2b reflected on the second polarized light separation surface P11 and the defective image of a part of the leaked light of the first projection light beam EL2a reflected on the second polarized light separation surface P11 can be formed. The positions differ in the scanning direction of the substrate P.

In this case, the first light shielding plate 111 is provided at a position that shields the leaked light from the second polarizing beam splitter PBS2 toward the substrate P. Therefore, the first light-shielding plate 111 allows the second projection beam EL2b from the second polarizing beam splitter PBS2 to the substrate P to be projected onto the substrate P, and also shields the leakage light from the second polarizing beam splitter PBS2 toward the substrate P. .

As described above, the first polarizing beam splitter PBS1, the second polarizing beam splitter PBS2, the first polarizing member 105, the second polarizing member 106, and the first light shielding plate 111 only image the projection image in the scanning direction of the substrate P The position is different from the imaging position of the defective image, and the first light shielding plate 111 blocks the leaked light. Therefore, the function of the reflection optical system 100 is to serve as a light amount reduction unit that reduces the amount of light of the leak light projected onto the substrate P.

The incident position of the first projection beam EL2a on the first polarization separation plane P10 of the first polarization beam splitter PBS1 and the incidence of the first projection beam EL2a on the second polarization separation plane P11 of the second polarization beam splitter PBS2. The position is a position symmetrical to the second optical axis BX2. The incident position of the second projection beam EL2b on the first polarization separation plane P10 of the first polarization beam splitter PBS1 and the incidence of the second projection beam EL2b on the second polarization separation plane P11 of the second polarization beam splitter PBS2. The position is a position symmetrical to the second optical axis BX2. In other words, the incident position of the first projection beam EL2a on the first polarization separation plane P10 of the first polarization beam splitter PBS1 and the incidence of the second projection beam EL2b on the second polarization separation plane P11 of the second polarization beam splitter PBS2. The position is an asymmetric position sandwiching the second optical axis BX2.

When the incident position of the first projection beam EL2a on the first polarization separation plane P10 and the incident position of the second projection beam EL2b on the second polarization separation plane P11 are in an asymmetric position with the second optical axis BX2 interposed, The projection area PA is a position shifted from the illumination area IR in the X direction (the second optical axis direction). In this case, in order to make the perimeter from the center point of the illumination area IR1 (and IR3, IR5) on the mask M to the center point of the illumination area IR2 (and IR4, IR6), and the projection area PA1 ( The perimeter of the center point of the second projection area PA2 (and PA4, PA6) to the center point of the second projection area PA2 (and PA4, PA6) is the same length, so that the first projection optical system PL1 (and PL3, PL5) and the second projection optical system The structure of PL2 (and PL4, PL6) is different.

The first projection optical system PL1 (and PL3, PL5) with an odd number (on the left side of FIG. 7) is formed on the first polarization splitting surface P10 of the first polarization beam splitter PBS1, and the incident position of the first projection beam EL2a and Compared with the incident position of the second projection light beam EL2b, the first polarizing beam splitter PBS1, the second polarizing beam splitter PBS2, and the first polarizing member 105 are arranged so as to be located on the upper side in the Z direction and on the central side in the X direction. And the second deflection member 106. Therefore, on the second polarized light separation plane P11 of the second polarized beam splitter PBS2, the incident position of the second projection beam EL2b and the incident position of the first projection beam EL2a are positioned above the Z direction and X Direction outside.

That is, the first projection optical system PL1 is, in the Z direction, the reflection portion of the first polarizing beam splitter PBS1, the reflection portion of the second polarizing member 106, the reflection portion of the second polarizing beam splitter PBS2, and the first The order of the reflecting portions of the deflecting member 105. Therefore, as shown in FIG. 7, the second deflecting member 106 is arranged along the direction of the full imaging field CIF (Z direction), and is disposed on the reflection portion of the first polarizing beam splitter PBS1 and the reflection of the second polarizing beam splitter PBS2. Between sections. In addition, in the first projection optical system PL1, the positions of the reflective portions of the first polarizing beam splitter PBS1 and the second polarizing beam splitter PBS2, and the positions of the first polarizing member 105 and the second polarizing member 106 are in the second light. The direction of the axis BX2 is different.

The second projection optical system PL2 (and PL4, PL6) of the even number (on the right side of FIG. 7) is formed on the first polarization splitting surface P10 of the first polarization beam splitter PBS1, and the incident position of the first projection beam EL2a and Compared with the incident position of the second projection light beam EL2b, the first polarizing beam splitter PBS1, the second polarizing beam splitter PBS2, and the first polarizing member 105 are arranged so that they are positioned below the Z direction and outside the X direction. And the second deflection member 106. Therefore, at the second polarized light separation plane P11 of the second polarized beam splitter PBS2, the incident position of the second projection beam EL2b and the incident position of the first projection beam EL2a are located on the lower side of the Z direction and X The center side of the direction.

In other words, the second projection optical system PL2 is, in the Z direction, a reflection portion of the second polarization member 106, a reflection portion of the first polarization beam splitter PBS1, a reflection portion of the first polarization member 105, and a second polarization light component. Sequence of the reflecting part of the beamer PBS2. Therefore, as shown in FIG. 7, the first deflection member 105 is arranged in the reflection direction (Z direction) of the full imaging field CIF in the reflection portion of the first polarization beam splitter PBS1 and the reflection portion of the second polarization beam splitter PBS2. between. In addition, in the second projection optical system PL2, similarly to the first projection optical system PL1, the positions of the reflective portions of the first polarizing beam splitter PBS1 and the second polarizing beam splitter PBS2, and the first polarizing member 105 and the second polarizing The position of the member 106 is different in the direction of the second optical axis BX2.

Further, it is formed not only with the reflecting portion of the first polarizing beam splitter PBS1, the reflecting portion of the second polarizing beam splitter PBS2, the first polarizing member 105 and the second polarizing member 106, but also the slit-shaped first incident field of view Each of the four fields of vision (the first field of view, the second field of view, and the second field of view) (equivalent to IR, Img1, Img2, and PA shown in Figure 5) correspond to a rectangle, and The width directions (Z directions) of the slits of the imaging field CIF are separated from each other. In the case of the odd-numbered first projection optical system PL1 (and PL3 and PL5) in FIG. 5, the illumination region IR, the intermediate image Img2, the projection region PA, and the intermediate image Img1 are sequentially arranged from the top in the Z direction. On the other hand, in the case of the even-numbered second projection optical system PL2 (and PL4 and PL6), the intermediate image Img2, the illumination area IR, the intermediate image Img1, and the projection area PA are sequentially formed from above the Z direction.

As described above, the first projection optical system PL1 (and PL3 and PL5) and the second projection optical system PL2 (and PL4 and PL6) have different structures, so that the illumination region IR1 ( Perimeter ΔDm from the center point of the illumination area IR2 (and IR4, IR6) to the center point of the illumination area IR2 (and IR4, IR6), and the center point from the projection area PA1 (and PA3, PA5) on the substrate P to the second projection area The perimeter ΔDs of the center point of PA2 (and PA4, PA6) is the same length. At this time, since the projection area PA is shifted from the illumination area IR in the X direction (second optical axis BX2 direction), the first axis AX1 of the mask holding cylinder 21 and the second axis of the substrate supporting cylinder 25 AX2 corresponds to the offset of the projection area PA from the illumination area IR, and is offset in the direction of the second optical axis BX2.

As described above, in the second embodiment, in the reflection optical system 100, the imaging position of the projection image formed by the second projection beam EL2b and the defective image formed by the leakage light from the first projection beam EL2a can be formed. The positions are different in the scanning direction of the substrate P, and the first light shielding plate 111 shields the leaked light. As mentioned above, since the reflective optical system 100 can shield the leaked light projected on the substrate P, the projection image can be well projected on the substrate P.

In the second embodiment, in the reflective optical system 100, the fields of view of the first projection beam EL2a and the second projection beam EL2b can be divided, that is, the first incident field of view, the first incident field of view, the second incident field of vision, and The second shot field of view may be partially repeated. In other words, in the second embodiment, since it is not necessary to separate the fields of view of the first projection beam EL2a and the second projection beam EL2b as in the first embodiment, it is possible to increase the degree of freedom in the arrangement of various optical components of the reflection optical system 100.

In the second embodiment, the 1/2 wavelength plate 104 is provided between the first polarizing beam splitter PBS1 and the refractive lens 71a, but the configuration is not limited to this. For example, a 11/4 wavelength plate may be provided between the first polarizing beam splitter PBS1 and the refractive lens 71a, and a 21/4 wavelength plate may be provided between the second polarizing beam splitter PBS2 and the refractive lens 71a. In this case, the 11/4 wavelength plate and the 21/4 wavelength plate may be integrated.

[Third Embodiment]

Next, an exposure apparatus U3 according to the third embodiment will be described with reference to FIG. 8. In addition, in the description of the third embodiment, in order to avoid duplication of description with the second embodiment, only the parts different from the second embodiment will be described, and the same constituent elements as those in the second embodiment are given to the first embodiment. In the second embodiment, the same symbols are used for explanation. FIG. 8 is a diagram showing a configuration of a projection optical system of an exposure apparatus according to a third embodiment. The exposure apparatus U3 of the second embodiment uses the reflection optical system 100 of the projection optical system PL to set the imaging position of the projection image formed by the second projection light beam EL2b and the imaging position of the defective image formed by the leaked light. The scanning directions of the substrates P are different. In the exposure apparatus U3 of the third embodiment, in the reflection optical system 130 of the projection optical system PL, the imaging position of the projection image formed by the projection light beam EL2 and the imaging position of the defective image formed by the leaked light are in the depth direction. (Focus direction) are different. In addition, in FIG. 8, to simplify the description in the third embodiment, only a part of the optical system 131 and the reflective optical system 130 are shown. In FIG. 8, the mask surface P1 and the substrate P are arranged parallel to the XY plane, so that the main ray of the first projection light beam EL2a from the mask surface P1 is perpendicular to the XY plane, and the second projection onto the substrate P is performed. The main ray of the light beam EL2b is perpendicular to the XY plane.

In the projection optical system PL of the third embodiment, a part of the optical system 131 includes a refractive lens 71 a and a first concave mirror 72. Since the configurations of the refractive lens 71a and the first concave mirror 72 are the same as those of the first embodiment and the second embodiment, description thereof will be omitted. In addition, in some optical systems 131, as in the second embodiment, a plurality of lens members may be arranged between the refractive lens 71a and the first concave mirror 72.

The reflection optical system 130 includes a first polarizing beam splitter (first reflecting member) PBS1, a second polarizing beam splitter (second reflecting member) PBS2, a 1/2 wavelength plate 104, and a first polarizing member (first optical member And third reflecting portion) 105 and a second deflecting member (second optical member and fourth reflecting portion) 106. In addition, the first polarizing beam splitter PBS1, the second polarizing beam splitter PBS2, the 1/2 wavelength plate 104, the first polarizing member 105, and the second polarizing member 106 are configured to differ from the second embodiment only by a partial angle or the like. Since they are almost the same, the description is omitted.

Here, FIG. 8 shows the first projection light beam EL2a incident on the first polarizing beam splitter PBS1 from the mask surface P1, with the first polarizing beam splitting surface P10 of the first polarizing beam splitter PBS1 as the center. The symmetrical first projection light beam EL3. At this time, the surface on which the imaginary first projection light beam EL3 is formed is the imaginary mask surface P15. In addition, FIG. 8 shows an imaginary plane symmetry with the first projection light beam EL2a incident from the second polarizing beam splitter PBS2 into the first deflection member 105 and centered on the first reflection surface P12 of the first deflection member 105. The first projection beam EL4. At this time, the surface on which the imaginary first projection light beam EL4 is formed is the imaginary intermediate image plane P16.

The first polarizing beam splitter PBS1, the second polarizing beam splitter PBS2, the first polarizing member 105, and the second polarizing member 106 are arranged so as to be a projection formed by the second projection light beam EL2b reflected by the second polarizing beam splitter PBS2. The imaging position of the image and the defective image formed by a part of the leakage light of the first projection beam EL2a reflected by the second polarizing beam splitter PBS2 is in the depth direction of the focus (that is, along the main ray of the imaging beam). Direction). Specifically, the imaging position of the imaginary first projection beam EL3 on the imaginary mask surface P15 is made deeper in the depth direction, and the imaginary first projection beam EL4 is on the imaginary intermediate image plane P16. A first polarizing beam splitter PBS1, a second polarizing beam splitter PBS2, a first polarizing member 105, and a second polarizing member 106 are arranged so that the imaging position of the defective image is shallow in the depth direction.

By making such an arrangement, a good projection image can be formed on the substrate P by the second projection light beam EL2b reflected on the second polarization splitting surface P11 of the second polarization beam splitter PBS2. In addition, a part of the first projection light beam EL2a reflected on the second polarization splitting surface P11 of the second polarization beam splitter PBS2 leaks light, and a defective image of a mask pattern is formed on the front side of the substrate P. That is, the imaging position of the projection image formed by the second projection beam EL2b is the projection area PA on the substrate P, and the imaging position of the defective image formed by the leaked light is between the second polarizing beam splitter PBS2 and the substrate P Between locations. In this way, since the imaging position of the defective image is located between the second polarizing beam splitter PBS2 and the substrate P, the defective image formed by the leaked light projected on the substrate P becomes extremely blurred.

As described above, the first polarizing beam splitter PBS1, the second polarizing beam splitter PBS2, the first polarizing member 105, and the second polarizing member 106 make the imaging position of the projection image different from the imaging position of the defective image in the depth direction. Therefore, the function of the reflection optical system 130 is to serve as a light amount reducing unit that reduces the light amount of the leaked light projected on the substrate P.

In addition, the imaging position of the virtual first projection beam EL3 on the virtual mask surface P15 is made deeper in the depth direction, and the virtual first projection beam EL4 is a defective image on the virtual intermediate image plane P16. The imaging position is made shallower in the depth direction to lengthen the optical path from the mask surface P1 to the first polarizing beam splitter PBS1 and shorten the optical path from the second polarizing beam splitter PBS2 to the intermediate image plane P7. Therefore, it is possible to shorten the optical path from the second polarizing beam splitter PBS2 to the first polarizing beam splitter PBS1 through the intermediate image plane P7.

As described above, in the third embodiment, in the reflection optical system 130, the imaging position of the projection image formed by the second projection light beam EL2b and the imaging position of the defective image formed by the leakage light from the first projection light beam EL2a, They differ in the depth of focus (in the direction of the main ray of the imaging beam). Therefore, since the reflection optical system 130 can make the leaked light projected onto the substrate P extremely blurry, the amount of light leaked onto the substrate P can be reduced, thereby reducing the impact on the projected image projected on the substrate P. influences.

In addition, in the third embodiment, since it is not necessary to separate the field of view as in the first embodiment, or to make the incident position on the second polarized light separation plane P11 different as in the second embodiment, it can be improved in the reflection optical system 130. Design freedom.

[Fourth Embodiment]

Next, an exposure apparatus U3 of the fourth embodiment will be described with reference to FIG. 9. In addition, in the description of the fourth embodiment, in order to avoid repetitive descriptions, only the parts that are different from the first embodiment will be described. The same components as those in the first embodiment will be given the same symbols as in the first embodiment. Explain. FIG. 9 is a diagram showing the overall configuration of an exposure apparatus (substrate processing apparatus) according to a fourth embodiment. The exposure apparatus U3 of the first embodiment is configured to support the substrate P by a substrate support cylinder 25 having a support surface P2 having a circumferential surface, and the exposure apparatus U3 of the fourth embodiment is configured to support the substrate P as Flat structure.

In the exposure apparatus U3 of the fourth embodiment, the substrate supporting mechanism 150 includes a pair of driving rollers 151 that suspend the substrate P. The pair of driving rollers 151 are rotated by the second driving portion 26 to move the substrate P in the scanning direction.

Therefore, the substrate supporting mechanism 150 guides the substrate P transferred from the driving roller R4 from one driving roller 151 to the other driving roller 151, and suspends the substrate P from the pair of driving rollers 151. The substrate supporting mechanism 150 rotates the pair of driving rollers 151 by the second driving unit 26, thereby guiding the substrate P suspended from the pair of driving rollers 151 to the driving roller R5.

At this time, the substrate P in FIG. 9 becomes a plane substantially parallel to the XY plane. Therefore, the main ray of the second projection light beam EL2b projected on the substrate P is perpendicular to the XY plane. When the main ray of the second projection beam EL2b projected on the substrate P is perpendicular to the XY plane, the projection optical system PL is on the second polarization separation plane P11 of the second polarization beam splitter PBS2 based on the main ray of the second projection beam EL2b. It is also appropriate to change the angle.

In the fourth embodiment, similar to the previous FIG. 2, when viewed in the XZ plane, from the center point of the illumination area IR1 (and IR3 and IR5) on the mask M to the illumination area IR2 (and IR4 and IR6). ) And the perimeter of the center point of the projection area PA1 (and PA3, PA5) on the substrate P along the support surface P2 to the center point of the second projection area PA2 (and PA4, PA6), are Set to be substantially equal.

In the exposure device U3 of FIG. 9, the lower control device 16 also rotates the photomask holding cylinder 21 and a pair of driving rollers 151 in a predetermined rotation speed ratio, thereby forming the photomask surface P1 on the photomask M. The image of the mask pattern is continuously and repeatedly projected onto the surface of the substrate P suspended from the pair of driving rollers 151.

As described above, in the fourth embodiment, even when the substrate P is supported in a flat shape, the influence of the leakage light on the projection image formed on the substrate P can be reduced, so the projection image can be well projected on the substrate P. on.

In addition, in the above embodiments, although the cylindrical photomask M is a reflection type, it may be a transmissive cylindrical photomask. In this case, a pattern made of a light-shielding film is formed on the outer peripheral surface of the penetrating cylindrical body (quartz tube, etc.) having a certain thickness, and the inner surface of the penetrating cylindrical body faces the outer peripheral surface. Each of the illumination optical system and the light source part of each illumination region IR1 to IR6 that project illumination light may be provided inside the cylindrical body. In the case of such penetrating illumination, the deflection beam splitter PBS and the 1/4 wavelength plate 41 shown in Figs. 2, 4, and 7 can be omitted.

In addition, although a cylindrical mask M is used in each embodiment, it may be a typical planar mask. In this case, the radius Rm of the cylindrical mask M illustrated in FIG. 2 is considered to be infinite, and the main ray of the imaging beam from the mask pattern is perpendicular to the mask surface. For example, the first The angle of the deflection surface P3 of the deflection member 76 may be sufficient.

Furthermore, in the above embodiments, although a photomask (hard mask) having a static pattern corresponding to a pattern to be projected on the substrate P is used, it may also be used in a plurality of projection optical modules PL1 to PL6. The positions of each of the illumination areas IR1 to IR6 (the position of the object surface of each projection optical module) are arranged with DMD (Micro Mirror Device) and SLM (Spatial Light Modulation Element) composed of a plurality of movable micromirrors. A maskless exposure method in which dynamic pattern light is generated by DMD and SLM in synchronization with the conveyance and movement of the substrate P, and the pattern is transmitted to the substrate P. In this case, the DMD and SLM that generate the dynamic pattern are equivalent to the mask member.

Claims (15)

    A projection optical device is used to form an image of a mask pattern in an illumination area set on a mask elongated in the first direction while imaging an image of a mask pattern set on a substrate, while contacting the above mask Scanning in the second direction crossing the first direction of the substrate and exposing the image of the photomask pattern to the substrate, which includes a refractive lens group provided between the photomask and the substrate, and A circular imaging field of view in which the optical axis in the second direction is a center point; a reflective optical member is disposed on a pupil surface formed by the refractive lens group; a first polarizing beam splitter is disposed corresponding to the refractive lens group The position of the first image height part of the center point in the imaging field of view that is eccentric to the second direction reflects the imaging beam from the illumination area toward the refractive lens group; the second polarizing beam splitter is arranged correspondingly The position of the second image height portion on the side opposite to the first image height portion through the center point in the imaging field of view of the refractive lens group, is formed from the refractive lens group. The image beam is reflected toward the above-mentioned projection area; the wavelength plate changes the polarization state of the imaging beam, and the imaging beam is emitted from the first polarizing beam splitter and sequentially passes through the refractive lens group, the reflective optical member, and the refractive lens After the group enters the second polarizing beam splitter; and a deflecting member that reflects the imaging beam that has passed through the second polarizing beam splitter and guides the first polarizing beam splitter to the second polarizing beam splitter; The light path is deflected by forming an intermediate image plane with each of the illuminating area and the projection area with the first polarizing beam splitter; the light path from the second polarizing beam splitter to the projection area is set to It is longer than the optical path from the second polarized beam splitter to the intermediate image plane, and the optical path from the illuminated area to the first polarized beam splitter is set to be longer than that from the intermediate image plane to the first polarized beam splitter. Light is long.         The projection optical device according to claim 1, wherein the imaging beam incident from the illumination area into the first polarizing beam splitter is set to a first polarized state; the first polarizing beam splitter has a polarized light separating surface, and The polarization separation surface reflects the imaging beam in the first polarization state from the illumination area toward the refractive lens group, and changes the imaging beam in the second polarization state different from the first polarization state by the wavelength plate. Penetrating; the second polarizing beam splitter has a polarized light separating surface that reflects the imaging light beam in the first polarized state emitted from the refractive lens group toward the projection area and changes by the wavelength plate The imaging beam in the second polarization state is transmitted through.         The projection optical device according to claim 2, wherein the polarizing member includes a first reflecting surface that passes through the second polarizing beam splitter and travels in parallel with the optical axis of the imaging beam in the second polarized state. Reflected toward the optical axis; and a second reflecting surface that causes the imaging beam in the second polarized state reflected by the first reflecting surface to be parallel to the optical axis and toward the first polarizing beam splitter reflection.         The projection optical device according to claim 3, wherein the intermediate image plane is formed in an optical path of the imaging beam in the second polarized state from the first reflection surface toward the second reflection surface.         The projection optical device according to any one of claims 2 to 4, wherein, when the first polarized state and the second polarized state are linearly polarized with each other orthogonal to each other, the wavelength plate is disposed in the first polarized light component. A 1/2 wavelength plate in the optical path between the beam splitter and the above-mentioned refractive lens group.         A scanning exposure device in which one side irradiates illumination light to an illumination area set on a mask elongated in the first direction, and an image of a part of the mask pattern in the illumination area is formed on a substrate through a projection optical system. The projection area scans the photomask and the substrate in a second direction that intersects the first direction, and exposes an image of the photomask pattern to the substrate, wherein the projection optics is based on the photomask and the A refractive lens group having a circular imaging field of vision with the optical axis extending in the second direction as a center point between the substrates, and a reflective optical member disposed on the pupil surface; and includes: a first polarizing beam splitter, Arranged at a position corresponding to the first image height portion decentered from the center point in the imaging field of view of the refractive lens group toward the second direction, and reflecting the imaging beam from the illumination area toward the refractive lens group; second polarized light A beam splitter arranged on the opposite side of the first image height portion corresponding to the center point in the imaging field of view through the refractive lens group The position of the second image height part reflects the imaging beam emitted from the refractive lens group to the projection area; the wavelength plate changes the polarization state of the imaging beam, and the imaging beam is emitted from the first polarizing beam splitter and Passes through the refractive lens group, the reflective optical member, and the refractive lens group in order and enters the second polarizing beam splitter; and a deflecting member that reflects and guides an imaging beam that has passed through the second polarizing beam splitter to the above A first polarizing beam splitter, and deflecting the optical path in such a manner that an intermediate image plane is formed between each of the second polarizing beam splitter and the first polarizing beam splitter and each conjugate of the illumination area and the projection area; The optical path from the second polarizing beam splitter to the projection area is set to be longer than the optical path from the second polarizing beam splitter to the intermediate image plane.         The scanning exposure apparatus according to claim 6, wherein the imaging beam that is incident from the illumination region into the first polarizing beam splitter is set to a first polarized state; the first polarizing beam splitter has a polarized light separating surface, and The polarization separation surface reflects the imaging beam in the first polarization state from the illumination area toward the refractive lens group, and changes the imaging beam in the second polarization state different from the first polarization state by the wavelength plate. Penetrating; the second polarizing beam splitter has a polarized light separating surface that reflects the imaging light beam in the first polarized state emitted from the refractive lens group toward the projection area and changes by the wavelength plate The imaging beam in the second polarization state is transmitted through.         The scanning exposure device according to claim 7, further setting the light path from the illumination area on the reticle to the first polarizing beam splitter to be larger than that from the intermediate image plane to the first polarizing beam splitter. The light path is long.         The scanning exposure apparatus according to claim 8, wherein the polarizing member includes a first reflecting surface that passes through the second polarizing beam splitter and travels in parallel with the optical axis of the imaging beam in the second polarized state. Reflected toward the optical axis; and a second reflecting surface that causes the imaging beam in the second polarized state reflected by the first reflecting surface to be parallel to the optical axis and toward the first polarizing beam splitter reflection.         The scanning exposure apparatus according to claim 9, wherein the intermediate image plane is formed in an optical path of the imaging beam in the second polarized state from the first reflection surface toward the second reflection surface.         The scanning exposure device according to any one of claims 7 to 10, wherein, in the case where the first polarization state and the second polarization state are linearly polarized with each other orthogonal to each other, the wavelength plate is disposed in the first polarization beam splitter. A 1/2 wavelength plate in the optical path between the beam splitter and the above-mentioned refractive lens group.         The scanning exposure device according to any one of claims 6 to 10, wherein the projection area is set to a length in the scanning direction of the substrate, that is, the second direction, and a width direction of the substrate, that is, the first direction The ratio of the lengths is a rectangular area whose length in the scanning direction / length in the width direction is 1/4 or less.         The scanning exposure device according to any one of claims 6 to 10, wherein the photomask is provided to be rotatable about a first axis extending in the first direction and along a radius of a certain distance from the first axis. A cylindrical mask having a cylindrical outer peripheral surface holding the above pattern.         The scanning exposure apparatus according to claim 13, wherein the substrate is a long substrate having a long flexibility in the second direction, and further includes a substrate support cylinder configured to be wound around the substrate. The first axis is parallel to the second axis, and the long substrate is supported by a part of a cylindrical support surface with a certain radius from the second axis, while the long substrate is positioned at a long position in the projection area. The direction is the second direction.         An element manufacturing method comprising forming an element on a substrate, comprising: forming a photosensitive functional layer on a surface of the substrate; and using the scanning exposure device according to any one of claims 6 to 14 to perform the photosensitive on the substrate. The action of the functional layer scans and exposes the image of the mask pattern corresponding to the element; by performing wet processing on the substrate after exposure, the action of forming the element corresponding to the mask pattern on the surface of the substrate.