TWI594289B - Blind aperture array and charged particle beam tracing device - Google Patents

Blind aperture array and charged particle beam tracing device Download PDF

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Publication number
TWI594289B
TWI594289B TW104130444A TW104130444A TWI594289B TW I594289 B TWI594289 B TW I594289B TW 104130444 A TW104130444 A TW 104130444A TW 104130444 A TW104130444 A TW 104130444A TW I594289 B TWI594289 B TW I594289B
Authority
TW
Taiwan
Prior art keywords
aperture array
film
insulating film
substrate
high resistance
Prior art date
Application number
TW104130444A
Other languages
English (en)
Chinese (zh)
Other versions
TW201626424A (zh
Inventor
Hiroshi Yamashita
Hiroshi Matsumoto
Kazuhiro Chiba
Original Assignee
Nuflare Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nuflare Technology Inc filed Critical Nuflare Technology Inc
Publication of TW201626424A publication Critical patent/TW201626424A/zh
Application granted granted Critical
Publication of TWI594289B publication Critical patent/TWI594289B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/045—Beam blanking or chopping, i.e. arrangements for momentarily interrupting exposure to the discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/043—Beam blanking
    • H01J2237/0435—Multi-aperture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31774—Multi-beam

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electron Beam Exposure (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW104130444A 2014-10-03 2015-09-15 Blind aperture array and charged particle beam tracing device TWI594289B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014204873A JP6500383B2 (ja) 2014-10-03 2014-10-03 ブランキングアパーチャアレイ及び荷電粒子ビーム描画装置

Publications (2)

Publication Number Publication Date
TW201626424A TW201626424A (zh) 2016-07-16
TWI594289B true TWI594289B (zh) 2017-08-01

Family

ID=55633281

Family Applications (2)

Application Number Title Priority Date Filing Date
TW104130444A TWI594289B (zh) 2014-10-03 2015-09-15 Blind aperture array and charged particle beam tracing device
TW106116895A TWI647734B (zh) 2014-10-03 2015-09-15 Masking aperture array and charged particle beam depicting device

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW106116895A TWI647734B (zh) 2014-10-03 2015-09-15 Masking aperture array and charged particle beam depicting device

Country Status (4)

Country Link
US (1) US9530616B2 (enExample)
JP (1) JP6500383B2 (enExample)
KR (1) KR101822990B1 (enExample)
TW (2) TWI594289B (enExample)

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WO2018063331A1 (en) 2016-09-30 2018-04-05 Intel Corporation Fill pattern to enhance ebeam process margin
CN111108582B (zh) 2017-08-08 2024-07-05 Asml荷兰有限公司 带电粒子阻挡元件、包括这样的元件的曝光装置以及使用这样的曝光装置的方法
JP6977528B2 (ja) * 2017-12-14 2021-12-08 株式会社ニューフレアテクノロジー マルチビーム用アパーチャセット
JP6847886B2 (ja) 2018-03-20 2021-03-24 株式会社東芝 荷電粒子ビーム偏向デバイス
CN109321849B (zh) * 2018-10-12 2021-04-02 燕山大学 一种适用于高低温的Fe基自润滑复合材料及其制备方法
JP7296274B2 (ja) * 2019-08-20 2023-06-22 株式会社ニューフレアテクノロジー 描画装置および偏向器
JP7359050B2 (ja) * 2020-03-18 2023-10-11 株式会社ニューフレアテクノロジー マルチビーム用のブランキング装置及びマルチ荷電粒子ビーム描画装置
JP7492929B2 (ja) * 2021-02-19 2024-05-30 株式会社東芝 半導体装置、荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム照射装置
JP7592556B2 (ja) 2021-06-02 2024-12-02 株式会社ニューフレアテクノロジー ブランキングアパーチャアレイユニット
KR20240007062A (ko) * 2022-07-07 2024-01-16 가부시키가이샤 뉴플레어 테크놀로지 실장 기판, 블랭킹 애퍼처 어레이 칩, 블랭킹 애퍼처 어레이 시스템 및 멀티 하전 입자 빔 조사 장치

Citations (4)

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CN1820346A (zh) * 2003-05-09 2006-08-16 株式会社荏原制作所 基于带电粒子束的检查装置及采用了该检查装置的器件制造方法
JP2012182294A (ja) * 2011-03-01 2012-09-20 Canon Inc 偏向器アレイ、偏向器アレイの製造方法、描画装置、および物品の製造方法
TW201324571A (zh) * 2011-10-03 2013-06-16 Ｐａｒａｍ股份有限公司 電子束描繪裝置及其描繪方法
JP2013165200A (ja) * 2012-02-13 2013-08-22 Canon Inc 荷電粒子線レンズ

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JP2617993B2 (ja) * 1988-06-20 1997-06-11 富士通株式会社 電子ビーム露光装置のブランキングアレーアパーチャの製造方法
JP2000164495A (ja) * 1998-11-26 2000-06-16 Advantest Corp 荷電粒子ビーム露光装置及びそこで使用するブランキング・アパーチャ・アレイ
JP2000268755A (ja) * 1999-03-18 2000-09-29 Fujitsu Ltd 薄型静電偏向器及び走査型荷電粒子ビーム装置
JP3763446B2 (ja) * 1999-10-18 2006-04-05 キヤノン株式会社 静電レンズ、電子ビーム描画装置、荷電ビーム応用装置、および、デバイス製造方法
JP2001283756A (ja) * 2000-03-31 2001-10-12 Canon Inc 電子光学系アレイ、これを用いた荷電粒子線露光装置ならびにデバイス製造方法
JP2001319854A (ja) * 2000-05-09 2001-11-16 Advantest Corp マスク、半導体素子製造方法、電子ビーム露光装置、荷電ビーム処理装置において用いられる部材
JP2002190437A (ja) * 2000-12-20 2002-07-05 Advantest Corp 電子ビーム露光装置及び校正方法
JP4704702B2 (ja) * 2004-06-30 2011-06-22 キヤノン株式会社 ブランキングアパーチャアレイおよびその製造方法
DE102008010123B4 (de) * 2007-02-28 2024-11-28 Ims Nanofabrication Gmbh Vielstrahl-Ablenkarray-Einrichtung für maskenlose Teilchenstrahl-Bearbeitung
EP2251893B1 (en) * 2009-05-14 2014-10-29 IMS Nanofabrication AG Multi-beam deflector array means with bonded electrodes
JP4874384B2 (ja) * 2009-12-25 2012-02-15 株式会社ニューフレアテクノロジー 基板カバーおよびそれを用いた荷電粒子ビーム描画方法
JP5679774B2 (ja) * 2010-11-09 2015-03-04 キヤノン株式会社 偏向器アレイ、荷電粒子描画装置、デバイス製造方法、偏向器アレイの製造方法
TWI477925B (zh) * 2011-10-04 2015-03-21 紐富來科技股份有限公司 Multi - beam charged particle beam mapping device and multi - beam charged particle beam rendering method
JP2013168396A (ja) * 2012-02-14 2013-08-29 Canon Inc 静電型の荷電粒子線レンズ及び荷電粒子線装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1820346A (zh) * 2003-05-09 2006-08-16 株式会社荏原制作所 基于带电粒子束的检查装置及采用了该检查装置的器件制造方法
JP2012182294A (ja) * 2011-03-01 2012-09-20 Canon Inc 偏向器アレイ、偏向器アレイの製造方法、描画装置、および物品の製造方法
TW201324571A (zh) * 2011-10-03 2013-06-16 Ｐａｒａｍ股份有限公司 電子束描繪裝置及其描繪方法
JP2013165200A (ja) * 2012-02-13 2013-08-22 Canon Inc 荷電粒子線レンズ

Also Published As

Publication number Publication date
TWI647734B (zh) 2019-01-11
KR101822990B1 (ko) 2018-01-29
TW201742097A (zh) 2017-12-01
JP2016076548A (ja) 2016-05-12
US9530616B2 (en) 2016-12-27
JP6500383B2 (ja) 2019-04-17
KR20160040427A (ko) 2016-04-14
US20160099129A1 (en) 2016-04-07
TW201626424A (zh) 2016-07-16

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