TWI591205B - Ｐｚｔ系強介電體薄膜形成用組成物及其製造方法及使用該組成物之ｐｚｔ系強介電體薄膜之形成方法 - Google Patents

Ｐｚｔ系強介電體薄膜形成用組成物及其製造方法及使用該組成物之ｐｚｔ系強介電體薄膜之形成方法 Download PDF

Info

Publication number
TWI591205B
TWI591205B TW103105484A TW103105484A TWI591205B TW I591205 B TWI591205 B TW I591205B TW 103105484 A TW103105484 A TW 103105484A TW 103105484 A TW103105484 A TW 103105484A TW I591205 B TWI591205 B TW I591205B
Authority
TW
Taiwan
Prior art keywords
pzt
composition
thin film
ferroelectric thin
mass
Prior art date
Application number
TW103105484A
Other languages
English (en)
Chinese (zh)
Other versions
TW201500580A (zh
Inventor
土井利浩
桜井英章
曽山信幸
Original Assignee
三菱綜合材料股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 三菱綜合材料股份有限公司 filed Critical 三菱綜合材料股份有限公司
Publication of TW201500580A publication Critical patent/TW201500580A/zh
Application granted granted Critical
Publication of TWI591205B publication Critical patent/TWI591205B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
    • C23C18/1208—Oxides, e.g. ceramics
    • C23C18/1216—Metal oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/125—Process of deposition of the inorganic material
    • C23C18/1254—Sol or sol-gel processing
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1229—Composition of the substrate
    • C23C18/1245—Inorganic substrates other than metallic
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/125—Process of deposition of the inorganic material
    • C23C18/1283—Control of temperature, e.g. gradual temperature increase, modulation of temperature
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31678—Of metal

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Metallurgy (AREA)
  • Ceramic Engineering (AREA)
  • Dispersion Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Semiconductor Memories (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Inorganic Insulating Materials (AREA)
TW103105484A 2013-03-25 2014-02-19 Ｐｚｔ系強介電體薄膜形成用組成物及其製造方法及使用該組成物之ｐｚｔ系強介電體薄膜之形成方法 TWI591205B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013061938A JP6075145B2 (ja) 2013-03-25 2013-03-25 Ｐｚｔ系強誘電体薄膜形成用組成物の製造方法並びに該組成物を用いたｐｚｔ系強誘電体薄膜の形成方法

Publications (2)

Publication Number Publication Date
TW201500580A TW201500580A (zh) 2015-01-01
TWI591205B true TWI591205B (zh) 2017-07-11

Family

ID=50115705

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103105484A TWI591205B (zh) 2013-03-25 2014-02-19 Ｐｚｔ系強介電體薄膜形成用組成物及其製造方法及使用該組成物之ｐｚｔ系強介電體薄膜之形成方法

Country Status (7)

Country Link
US (1) US20140287251A1 (enExample)
EP (1) EP2784137B1 (enExample)
JP (1) JP6075145B2 (enExample)
KR (1) KR102019522B1 (enExample)
CN (1) CN104072132B (enExample)
IN (1) IN2014DE00469A (enExample)
TW (1) TWI591205B (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6237398B2 (ja) * 2014-03-27 2017-11-29 三菱マテリアル株式会社 ＣｅドープのＰＺＴ系圧電体膜形成用組成物
EP3125317B1 (en) * 2014-03-27 2022-04-27 Mitsubishi Materials Corporation Mn-doped pzt-based piezoelectric film formation composition and mn-doped pzt-based piezoelectric film
JP6550791B2 (ja) * 2015-02-26 2019-07-31 三菱マテリアル株式会社 ＰＮｂＺＴ膜形成用組成物の製造方法及びＰＮｂＺＴ圧電体膜の形成方法
EP3343654B1 (en) * 2015-08-28 2020-04-15 Japan Advanced Institute of Science and Technology Method for forming pzt ferroelectric film
JP6950404B2 (ja) * 2017-03-15 2021-10-13 三菱マテリアル株式会社 圧電体膜形成用液組成物の製造方法及びこの液組成物を用いて圧電体膜を形成する方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1990013149A1 (en) * 1989-04-27 1990-11-01 Queen's University At Kingston SOL GEL PROCESS FOR PREPARING Pb(Zr,Ti)O3 THIN FILMS
US5384294A (en) * 1993-11-30 1995-01-24 The United States Of America As Represented By The Secretary Of The Air Force Sol-gel derived lead oxide containing ceramics
JP5370332B2 (ja) * 1995-09-19 2013-12-18 セイコーエプソン株式会社 圧電体素子およびインクジェット式記録ヘッド
US6203608B1 (en) * 1998-04-15 2001-03-20 Ramtron International Corporation Ferroelectric thin films and solutions: compositions
JP4122564B2 (ja) * 1998-04-24 2008-07-23 セイコーエプソン株式会社 圧電体素子、インクジェット式記録ヘッドおよびそれらの製造方法
JP2001261338A (ja) 2000-03-15 2001-09-26 Mitsubishi Materials Corp Ｔｉを含有する金属酸化物薄膜形成用原料溶液、Ｔｉを含有する金属酸化物薄膜の形成方法及びＴｉを含有する金属酸化物薄膜
JP4419332B2 (ja) * 2001-02-06 2010-02-24 三菱マテリアル株式会社 ペロブスカイト型酸化物膜の基板表面構造とその基板およびペロブスカイト型酸化物膜
US7229662B2 (en) * 2003-12-16 2007-06-12 National University Of Singapore Heterolayered ferroelectric thin films and methods of forming same
CN100481550C (zh) * 2004-07-13 2009-04-22 精工爱普生株式会社 用于形成铁电薄膜的组合物、铁电薄膜及其制造方法、液体喷射头
JP4217906B2 (ja) * 2004-09-17 2009-02-04 セイコーエプソン株式会社 前駆体溶液の製造方法
SG124303A1 (en) * 2005-01-18 2006-08-30 Agency Science Tech & Res Thin films of ferroelectric materials and a methodfor preparing same
FR2886309B1 (fr) * 2005-05-31 2007-08-17 Airbus France Sas Sol pour le revetement par voie sol-gel d'une surface et procede de revetement par voie sol-gel le mettant en oeuvre
WO2008058121A2 (en) * 2006-11-06 2008-05-15 Drexel University Sol-gel precursors and methods for making lead-based perovskite films
JP2011014820A (ja) * 2009-07-06 2011-01-20 Seiko Epson Corp 圧電体薄膜、液体噴射ヘッドおよび液体噴射装置の製造方法
KR101138239B1 (ko) * 2010-06-23 2012-04-26 한국산업기술대학교산학협력단 고압전 계수 박막의 제조방법
JP5613910B2 (ja) * 2011-05-17 2014-10-29 三菱マテリアル株式会社 Ｐｚｔ強誘電体薄膜の製造方法

Also Published As

Publication number Publication date
CN104072132B (zh) 2017-06-23
TW201500580A (zh) 2015-01-01
KR20140116794A (ko) 2014-10-06
EP2784137A1 (en) 2014-10-01
JP2014187266A (ja) 2014-10-02
JP6075145B2 (ja) 2017-02-08
KR102019522B1 (ko) 2019-09-06
CN104072132A (zh) 2014-10-01
EP2784137B1 (en) 2016-09-21
IN2014DE00469A (enExample) 2015-06-19
US20140287251A1 (en) 2014-09-25

Similar Documents

Publication Publication Date Title
JP5817621B2 (ja) 強誘電体薄膜形成用ゾルゲル液
CN105940515B (zh) 掺杂Mn及Nb的PZT系压电膜形成用组合物
TWI601706B (zh) ＰＮｂＺＴ強介電體薄膜之製造方法
CN103359785A (zh) Pzt系铁电薄膜的制造方法和pzt系铁电薄膜
TW201500580A (zh) Ｐｚｔ系強介電體薄膜形成用組成物及其製造方法及使用該組成物之ｐｚｔ系強介電體薄膜之形成方法
CN105940514A (zh) 掺杂Mn及Nb的PZT系压电膜
TW201546831A (zh) 摻雜Ｍｎ之ＰＺＴ系壓電體膜形成用組成物及摻雜Ｍｎ之ＰＺＴ系壓電體膜
JP5655272B2 (ja) 強誘電体薄膜形成用組成物、強誘電体薄膜の形成方法並びに該方法により形成された強誘電体薄膜
JP6075152B2 (ja) Ｐｚｔ系強誘電体薄膜形成用組成物の製造方法並びに該組成物を用いたｐｚｔ系強誘電体薄膜の形成方法
JP5533622B2 (ja) 強誘電体薄膜形成用組成物、強誘電体薄膜の形成方法並びに該方法により形成された強誘電体薄膜
JP5655274B2 (ja) 強誘電体薄膜形成用組成物、強誘電体薄膜の形成方法並びに該方法により形成された強誘電体薄膜
CN104072133A (zh) Pzt系铁电薄膜及其形成方法和复合电子组件
JP5659457B2 (ja) 強誘電体薄膜形成用組成物、強誘電体薄膜の形成方法並びに該方法により形成された強誘電体薄膜
JP6237398B2 (ja) ＣｅドープのＰＺＴ系圧電体膜形成用組成物
JP6183261B2 (ja) ＭｎドープのＰＺＴ系圧電体膜形成用組成物
JP5417962B2 (ja) 強誘電体薄膜形成用組成物、強誘電体薄膜の形成方法並びに該方法により形成された強誘電体薄膜
JP5293347B2 (ja) 強誘電体薄膜形成用組成物、強誘電体薄膜の形成方法並びに該方法により形成された強誘電体薄膜
JP2015193524A (ja) Ｐｚｔ系強誘電体薄膜及びその形成方法