TWI589737B - 單晶矽晶錠及晶圓的形成方法 - Google Patents
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Description
本發明涉及柴氏拉晶法單晶生長領域及半導體製造領域,尤其涉及一種單晶矽晶錠及晶圓的形成方法。
作為製造半導體元件起始材料的單晶矽通過被稱之為柴氏拉晶法(Czochralski method,簡稱CZ法)的晶體生長技術生長成圓柱形的單晶矽晶錠。單晶矽晶錠通過諸如切片、蝕刻、清洗、拋光等一系列晶圓加工製程而被加工成晶圓。
根據CZ法,在坩鍋中,將矽石在單晶爐中加熱融化,再將一根直徑只有10mm的棒狀晶種(稱晶種)浸入融液中,把晶種微微的旋轉向上提升,融液中的矽原子會在前面形成的單晶體上繼續結晶,並延續其規則的原子排列結構。若整個結晶環境穩定,就可以周而復始的形成結晶,最後形成一根圓柱形的原子排列整齊的矽單晶晶體,即矽單晶矽晶錠。
熔融矽裝在石英坩鍋內,並被多種雜質污染,其中一種是氧。在矽的熔融溫度下,氧滲入晶格,直到其達到一預定濃度,該濃度一般由矽熔融溫度下矽中氧的溶解度和凝固矽中氧的實際偏析係數確定。晶
體生長過程中滲入矽晶錠中的氧的濃度大於半導體元件製造中所用的典型溫度下凝固矽中氧的溶解度。隨著晶體從熔融矽中生長並冷卻,其中的氧溶解度迅速降低,氧在冷卻的矽晶錠中飽和。
矽晶錠被切割成晶片。晶片中殘留的間隙氧在後續熱制程過程中生長成氧析出物。元件主動區中氧析出物的出現可以降低閘極氧化物的完整性,並且導致不必要的基板漏電流。
本發明的目的在於提供一種單晶矽晶錠及晶圓的形成方法,能夠減少氧雜質的形成,提高後續元件的性能。
為了實現上述目的,本發明提出了一種單晶矽晶錠的形成方法,包括步驟:提供矽石,對該矽石進行氘原子摻雜;使用摻雜後的該矽石作為原始摻雜材料與多晶矽材料熔合,採用柴氏拉晶法形成單晶矽晶錠。
進一步地,在該單晶矽晶錠的形成方法中,對該矽石進行氘原子摻雜時,可選擇性地設定氘原子的劑量範圍是1E12~1E18離子/平方公分,亦可選擇性地設定氘原子的能量範圍是1keV~100keV。
其次,在該單晶矽晶錠的形成方法中,該柴氏拉晶法可選擇性地包括下列步驟:將該摻雜後的該矽石放入坩鍋中與多晶矽材料熔合以預定溫度進行融化;採用晶種以預定拉晶速率向上拉晶,待細晶長度達到預定長度時,降低拉晶速率進入放肩步驟;在該放肩步驟中降低拉速,維持一個線性降溫速率,形成預定直徑的單晶矽晶錠後,進入轉肩等徑步驟;待單晶矽晶錠直徑生長至預定要求後,迅速向上提升,及時降溫,同時停止線性降溫,給予坩鍋上升速率,根據直徑變化率速度,緩慢調節拉速控
制,待單晶矽晶錠直徑相對穩定後,打開自動等徑控制程式,進入自動等徑控制階段。
進一步地,在該單晶矽晶錠的形成方法中,該單晶矽晶錠的直徑大小可選擇性地由該拉晶速率和預定溫度控制,該矽石亦可選擇性地為多晶矽。
在本發明中,還提出了一種晶圓的形成方法,採用單晶矽晶錠作為原始材料形成晶圓,該單晶矽晶錠採用如前述的該單晶矽晶錠的形成方法形成。
進一步地,在該晶圓的形成方法中,可選擇性地包括下列步驟:對該單晶矽晶錠依次進行切薄、表面磨削、拋光、邊緣處理及清洗處理,形成晶圓。
與現有技術相比,依據本發明,可先對矽石進行氘原子的注入,使氘原子保留在矽石間隙內,接著,在採用柴氏拉晶法形成單晶矽晶錠時,使用被注入氘原子的矽石,使形成的單晶矽晶錠中氧含量和其它雜質降低,採用單晶矽晶錠形成晶圓後,在晶圓上形成的元件時,氘能夠擴散出,並與介面處等懸空鍵進行結合,形成較為穩定的結構,從而避免熱載子的穿透,降低漏電流,提高元件的性能與可靠性。
S100,S200‧‧‧步驟
圖1為本發明一實施例中單晶矽晶錠的形成方法的流程圖。
下面將結合示意圖對本發明的單晶矽晶錠及晶圓的形成方法進行更詳細的描述,其中表示了本發明的優選實施例,應該理解本領域
技術人員可以修改在此描述的本發明,而仍然實現本發明的有利效果。因此,下列描述應當被理解為對於本領域技術人員的廣泛知道,而並不作為對本發明的限制。
為了清楚,不描述實際實施例的全部特徵。在下列描述中,不詳細描述公知的功能和結構,因為它們會使本發明由於不必要的細節而混亂。應當認為在任何實際實施例的開發中,必須做出大量實施細節以實現開發者的特定目標,例如按照有關系統或有關商業的限制,由一個實施例改變為另一個實施例。另外,應當認為這種開發工作可能是複雜和耗費時間的,但是對於本領域技術人員來說僅僅是常規工作。
在下列段落中參照附圖以舉例方式更具體地描述本發明。根據下面說明和權利要求書,本發明的優點和特徵將更清楚。需說明的是,附圖均採用非常簡化的形式且均使用非精准的比例,僅用以方便、明晰地輔助說明本發明實施例的目的。
在本實施例中,提出了一種單晶矽晶錠的形成方法,包括下列步驟:S100:提供矽石,對該矽石進行氘原子摻雜;S200:使用摻雜後的該矽石作為原始摻雜材料與多晶矽材料熔合,採用柴氏拉晶法形成單晶矽晶錠。
在步驟S100中,該矽石可以為單晶矽或者含有雜質的矽石,使用該種矽石進行提煉,在進行柴氏拉晶法形成單晶矽晶錠之前,需要對該矽石進行氘原子摻雜,使氘原子存儲在矽石的間隙中,降低氧元素和其它雜質的含量,有利於提升後續元件的性能與可靠性。其中,對該矽石進行氘原子摻雜時,氘原子的劑量範圍是1E12~1E18離子/平方公分,例如是
1E15離子/平方公分。
對該矽石進行氘原子摻雜時,氘原子的能量範圍是1keV~100keV,例如是50keV。具體的摻雜能量和劑量可以根據矽石的大小來決定。
在步驟S200中,使用摻雜後的該矽石作為原始摻雜材料,採用柴氏拉晶法形成單晶矽晶錠。其中,該柴氏拉晶法包括步驟:將該摻雜後的該矽石放入坩鍋中與多晶矽材料以預定溫度進行融化;採用晶種以預定拉晶速率向上拉晶,待細晶長度達到預定長度時,降低拉晶速率進入放肩步驟;在該放肩步驟中降低拉速,維持一個線性降溫速率,形成預定直徑的單晶矽晶錠後,進入轉肩等徑步驟;待單晶矽晶錠直徑生長至預定要求後,迅速向上提升,及時降溫,同時停止線性降溫,給予坩鍋上升速率,根據直徑變化率速度,緩慢調節拉速控制,待單晶矽晶錠直徑相對穩定後,打開自動等徑控制程式,進入自動等徑控制階段。其中,該單晶矽晶錠的直徑大小由該拉晶速率和預定溫度控制。單晶矽晶錠的直徑大小可以根據製程的需要來決定,在此不作限定。
在本實施例的另一方面,還提出了一種晶圓的形成方法,採用單晶矽晶錠作為原始材料形成晶圓,該單晶矽晶錠採用如前述該單晶矽晶錠的形成方法形成。具體地,該晶圓的形成方法包括下列步驟:對該單晶矽晶錠依次進行切薄、表面磨削、拋光、邊緣處理及清洗處理,形成晶圓。後續可以在晶圓上形成元件,由於氘原子存儲在晶圓的間隙中,降低了氧原子和其它雜質的含量,從而可以在後續的熱製程過程中避免氧析出物,進而可以保護元件主動區中閘極氧化物的完整性,並且減少不必要的
基板漏電流。
綜上,在本發明實施例提供的單晶矽晶錠及晶圓的形成方法中,先對矽石進行氘原子的注入,使氘原子保留在矽石間隙內,接著,在採用柴氏拉晶法形成單晶矽晶錠時,使用被注入氘原子的矽石,使形成的單晶矽晶錠中氧含量和其它雜質降低,採用單晶矽晶錠形成晶圓後,在晶圓上形成的元件時,氘能夠擴散出,並與介面處等懸空鍵進行結合,形成較為穩定的結構,從而避免熱載子的穿透,降低漏電流,提高元件的性能與可靠性。
上述僅為本發明的優選實施例而已,並不對本發明起到任何限制作用。任何所屬技術領域的技術人員,在不脫離本發明的技術方案的範圍內,對本發明揭露的技術方案和技術內容做任何形式的等同替換或修改等變動,均屬未脫離本發明的技術方案的內容,仍屬於本發明的保護範圍之內。
S100,S200‧‧‧步驟
Claims (9)
- 一種單晶矽晶錠的形成方法,包括:提供至少一矽石,對該矽石進行氘原子摻雜;使用摻雜後的該矽石作為原始摻雜材料與一多晶矽材料熔合,採用柴氏拉晶法形成一單晶矽晶錠。
- 如申請專利範圍第1項所述的單晶矽晶錠的形成方法,其中,對該矽石進行氘原子摻雜時,氘原子的劑量範圍是1E12~1E18離子/平方公分。
- 如申請專利範圍第2項所述的該單晶矽晶錠的形成方法,其中,對該矽石進行氘原子摻雜時,氘原子的能量範圍是1keV~100keV。
- 如申請專利範圍第1項所述的單晶矽晶錠的形成方法,其中,該柴氏拉晶法包括:將該摻雜後的該矽石放入一坩鍋中與該多晶矽材料以一預定溫度進行融化;採用一晶種以一預定拉晶速率向上拉晶,待細晶長度達到一預定長度時,降低該拉晶速率進入一放肩步驟;在該放肩步驟中降低拉速,維持一個線性降溫速率,形成預定直徑的一單晶矽晶錠後,進入一轉肩等徑步驟;待該單晶矽晶錠直徑生長至預定要求後,迅速向上提升,及時降溫,同時停止線性降溫,給予一坩鍋上升速率,根據直徑變化率速度,緩慢調節拉速控制,待該單晶矽晶錠直徑相對穩定後,打開一自動等徑控制程式,進入一自動等徑控制階段。
- 如申請專利範圍第4項所述的單晶矽晶錠的形成方法,其中,該單 晶矽晶錠的直徑大小由該拉晶速率和該預定溫度控制。
- 如申請專利範圍第1項所述的單晶矽晶錠的形成方法,其中,該矽石為單晶矽。
- 如申請專利範圍第1項所述的單晶矽晶錠的形成方法,其中,該矽石為多晶矽。
- 一種晶圓的形成方法,採用一單晶矽晶錠作為原始摻雜材料形成至少一晶圓,其中,該單晶矽晶錠採用如申請專利範圍第1項至第7項其中任一項的該單晶矽晶錠的形成方法形成。
- 如申請專利範圍第8項所述的晶圓的形成方法,其更包括:對該單晶矽晶錠依次進行切薄、表面磨削、拋光、邊緣處理及清洗處理,形成該晶圓。
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