TWI587542B - 發光裝置 - Google Patents

發光裝置 Download PDF

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Publication number
TWI587542B
TWI587542B TW101147235A TW101147235A TWI587542B TW I587542 B TWI587542 B TW I587542B TW 101147235 A TW101147235 A TW 101147235A TW 101147235 A TW101147235 A TW 101147235A TW I587542 B TWI587542 B TW I587542B
Authority
TW
Taiwan
Prior art keywords
pattern
light
light extraction
substrate
illuminating device
Prior art date
Application number
TW101147235A
Other languages
English (en)
Chinese (zh)
Other versions
TW201342658A (zh
Inventor
林顯修
趙權泰
朴修益
Original Assignee
Ｌｇ伊諾特股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ｌｇ伊諾特股份有限公司 filed Critical Ｌｇ伊諾特股份有限公司
Publication of TW201342658A publication Critical patent/TW201342658A/zh
Application granted granted Critical
Publication of TWI587542B publication Critical patent/TWI587542B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/872—Periodic patterns for optical field-shaping, e.g. photonic bandgap structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/882—Scattering means

Landscapes

  • Led Devices (AREA)
  • Led Device Packages (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)
TW101147235A 2011-12-16 2012-12-13 發光裝置 TWI587542B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020110136834A KR101894025B1 (ko) 2011-12-16 2011-12-16 발광소자

Publications (2)

Publication Number Publication Date
TW201342658A TW201342658A (zh) 2013-10-16
TWI587542B true TWI587542B (zh) 2017-06-11

Family

ID=47713765

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101147235A TWI587542B (zh) 2011-12-16 2012-12-13 發光裝置

Country Status (6)

Country Link
US (1) US9153756B2 (https=)
EP (1) EP2605296B1 (https=)
JP (1) JP6153322B2 (https=)
KR (1) KR101894025B1 (https=)
CN (1) CN103165788B (https=)
TW (1) TWI587542B (https=)

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Publication number Priority date Publication date Assignee Title
WO2015033638A1 (ja) * 2013-09-03 2015-03-12 シャープ株式会社 半導体発光素子
DE102013112740B4 (de) * 2013-11-19 2021-03-18 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierendes Halbleiterbauelement
TWI614914B (zh) 2014-07-11 2018-02-11 晶元光電股份有限公司 發光元件及其製造方法
US10128420B2 (en) * 2016-12-30 2018-11-13 Lite-On Technology Corporation LED package structure and chip-scale light emitting unit
JP2018170333A (ja) * 2017-03-29 2018-11-01 株式会社東芝 半導体装置及びその製造方法
EP3474338B1 (en) 2017-08-24 2020-12-23 Soko Kagaku Co., Ltd. Method for manufacturing nitride semiconductor ultraviolet light emitting element, and nitride semiconductor ultraviolet light emitting element
CN111146314B (zh) * 2018-11-06 2021-02-23 中国科学院苏州纳米技术与纳米仿生研究所 提高氮化物半导体紫外发光二极管取光效率的方法及应用
KR102669515B1 (ko) * 2018-12-27 2024-05-28 삼성디스플레이 주식회사 디스플레이 장치
DE102019100624A1 (de) * 2019-01-11 2020-07-16 Osram Opto Semiconductors Gmbh Optoelektronisches halbleiterbauelement mit erster und zweiter dielektrischer schicht und verfahren zur herstellung des optoelektronischen halbleiterbauelements

Citations (4)

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US20050230699A1 (en) * 2004-04-16 2005-10-20 Bor-Jen Wu Light-emitting device with improved optical efficiency
US20100006878A1 (en) * 2008-07-08 2010-01-14 Samsung Electro-Mechanics Co., Semiconductor light emitting device having patterned substrate and manufacturing method of the same
US20100127295A1 (en) * 2008-11-26 2010-05-27 Sun Kyung Kim Light emitting device and method of manufacturing the same
US20110186857A1 (en) * 2010-02-04 2011-08-04 Dae Sung Kang Light emitting device, light emitting device package, and lighting system

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US5779924A (en) * 1996-03-22 1998-07-14 Hewlett-Packard Company Ordered interface texturing for a light emitting device
JP2002319708A (ja) * 2001-04-23 2002-10-31 Matsushita Electric Works Ltd Ｌｅｄチップおよびｌｅｄ装置
JP4151282B2 (ja) * 2002-03-01 2008-09-17 日亜化学工業株式会社 窒化物系半導体発光素子
JP4590905B2 (ja) * 2003-10-31 2010-12-01 豊田合成株式会社 発光素子および発光装置
KR100638819B1 (ko) * 2005-05-19 2006-10-27 삼성전기주식회사 광추출효율이 개선된 수직구조 질화물 반도체 발광소자
JP4778745B2 (ja) * 2005-07-27 2011-09-21 パナソニック株式会社 半導体発光装置及びその製造方法
JP4829190B2 (ja) * 2007-08-22 2011-12-07 株式会社東芝 発光素子
EP2206164A2 (en) * 2007-10-08 2010-07-14 3M Innovative Properties Company Light emitting diode with bonded semiconductor wavelength converter
EP2234182B1 (en) * 2007-12-28 2016-11-09 Nichia Corporation Semiconductor light emitting element and method for manufacturing the same
KR20100095134A (ko) * 2009-02-20 2010-08-30 엘지이노텍 주식회사 발광소자 및 그 제조방법
KR20120099709A (ko) * 2009-11-03 2012-09-11 더 리전츠 오브 더 유니버시티 오브 캘리포니아 하나 이상의 표면 위의 아연 산화물 나노로드 어레이들을 이용하는 발광 다이오드 구조물 및 이러한 아연 산화물 나노로드 어레이들을 저비용으로 제조하는 방법
KR101047639B1 (ko) * 2010-04-19 2011-07-07 엘지이노텍 주식회사 반도체 발광소자, 발광 소자 패키지 및 반도체 발광 소자 제조방법
CN102280553A (zh) * 2010-06-10 2011-12-14 杨秋忠 覆晶发光二极管晶粒及其晶粒阵列
US8723201B2 (en) * 2010-08-20 2014-05-13 Invenlux Corporation Light-emitting devices with substrate coated with optically denser material
US8343788B2 (en) * 2011-04-19 2013-01-01 Epistar Corporation Light emitting device and manufacturing method thereof
CN102184846A (zh) * 2011-04-22 2011-09-14 东莞市中镓半导体科技有限公司 一种图形化衬底的制备方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050230699A1 (en) * 2004-04-16 2005-10-20 Bor-Jen Wu Light-emitting device with improved optical efficiency
US20100006878A1 (en) * 2008-07-08 2010-01-14 Samsung Electro-Mechanics Co., Semiconductor light emitting device having patterned substrate and manufacturing method of the same
US20100127295A1 (en) * 2008-11-26 2010-05-27 Sun Kyung Kim Light emitting device and method of manufacturing the same
US20110186857A1 (en) * 2010-02-04 2011-08-04 Dae Sung Kang Light emitting device, light emitting device package, and lighting system

Also Published As

Publication number Publication date
US20130153947A1 (en) 2013-06-20
KR20130069215A (ko) 2013-06-26
JP2013128112A (ja) 2013-06-27
EP2605296A2 (en) 2013-06-19
EP2605296A3 (en) 2015-02-11
TW201342658A (zh) 2013-10-16
JP6153322B2 (ja) 2017-06-28
US9153756B2 (en) 2015-10-06
CN103165788B (zh) 2017-07-18
EP2605296B1 (en) 2018-06-13
KR101894025B1 (ko) 2018-09-03
CN103165788A (zh) 2013-06-19

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