KR101894025B1 - 발광소자 - Google Patents

발광소자 Download PDF

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Publication number
KR101894025B1
KR101894025B1 KR1020110136834A KR20110136834A KR101894025B1 KR 101894025 B1 KR101894025 B1 KR 101894025B1 KR 1020110136834 A KR1020110136834 A KR 1020110136834A KR 20110136834 A KR20110136834 A KR 20110136834A KR 101894025 B1 KR101894025 B1 KR 101894025B1
Authority
KR
South Korea
Prior art keywords
pattern
light
light emitting
substrate
emitting device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020110136834A
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English (en)
Korean (ko)
Other versions
KR20130069215A (ko
Inventor
임현수
조권태
박수익
Original Assignee
엘지이노텍 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to KR1020110136834A priority Critical patent/KR101894025B1/ko
Application filed by 엘지이노텍 주식회사 filed Critical 엘지이노텍 주식회사
Priority to EP12197046.1A priority patent/EP2605296B1/en
Priority to TW101147235A priority patent/TWI587542B/zh
Priority to JP2012271868A priority patent/JP6153322B2/ja
Priority to US13/713,923 priority patent/US9153756B2/en
Priority to CN201210548276.4A priority patent/CN103165788B/zh
Publication of KR20130069215A publication Critical patent/KR20130069215A/ko
Application granted granted Critical
Publication of KR101894025B1 publication Critical patent/KR101894025B1/ko
Assigned to 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 reassignment 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 권리의 전부이전등록 Assignors: 엘지이노텍 주식회사
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/872—Periodic patterns for optical field-shaping, e.g. photonic bandgap structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/882—Scattering means

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  • Led Devices (AREA)
  • Led Device Packages (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)
KR1020110136834A 2011-12-16 2011-12-16 발광소자 Expired - Fee Related KR101894025B1 (ko)

Priority Applications (6)

Application Number Priority Date Filing Date Title
KR1020110136834A KR101894025B1 (ko) 2011-12-16 2011-12-16 발광소자
TW101147235A TWI587542B (zh) 2011-12-16 2012-12-13 發光裝置
JP2012271868A JP6153322B2 (ja) 2011-12-16 2012-12-13 発光素子
US13/713,923 US9153756B2 (en) 2011-12-16 2012-12-13 Light-emitting device
EP12197046.1A EP2605296B1 (en) 2011-12-16 2012-12-13 Light-emitting device
CN201210548276.4A CN103165788B (zh) 2011-12-16 2012-12-17 发光器件

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020110136834A KR101894025B1 (ko) 2011-12-16 2011-12-16 발광소자

Publications (2)

Publication Number Publication Date
KR20130069215A KR20130069215A (ko) 2013-06-26
KR101894025B1 true KR101894025B1 (ko) 2018-09-03

Family

ID=47713765

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020110136834A Expired - Fee Related KR101894025B1 (ko) 2011-12-16 2011-12-16 발광소자

Country Status (6)

Country Link
US (1) US9153756B2 (https=)
EP (1) EP2605296B1 (https=)
JP (1) JP6153322B2 (https=)
KR (1) KR101894025B1 (https=)
CN (1) CN103165788B (https=)
TW (1) TWI587542B (https=)

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WO2015033638A1 (ja) * 2013-09-03 2015-03-12 シャープ株式会社 半導体発光素子
DE102013112740B4 (de) * 2013-11-19 2021-03-18 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierendes Halbleiterbauelement
TWI614914B (zh) 2014-07-11 2018-02-11 晶元光電股份有限公司 發光元件及其製造方法
US10128420B2 (en) * 2016-12-30 2018-11-13 Lite-On Technology Corporation LED package structure and chip-scale light emitting unit
JP2018170333A (ja) * 2017-03-29 2018-11-01 株式会社東芝 半導体装置及びその製造方法
EP3474338B1 (en) 2017-08-24 2020-12-23 Soko Kagaku Co., Ltd. Method for manufacturing nitride semiconductor ultraviolet light emitting element, and nitride semiconductor ultraviolet light emitting element
CN111146314B (zh) * 2018-11-06 2021-02-23 中国科学院苏州纳米技术与纳米仿生研究所 提高氮化物半导体紫外发光二极管取光效率的方法及应用
KR102669515B1 (ko) * 2018-12-27 2024-05-28 삼성디스플레이 주식회사 디스플레이 장치
DE102019100624A1 (de) * 2019-01-11 2020-07-16 Osram Opto Semiconductors Gmbh Optoelektronisches halbleiterbauelement mit erster und zweiter dielektrischer schicht und verfahren zur herstellung des optoelektronischen halbleiterbauelements

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090052159A1 (en) * 2007-08-22 2009-02-26 Saori Abe Light-emitting device and method for manufacturing the same

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US5779924A (en) * 1996-03-22 1998-07-14 Hewlett-Packard Company Ordered interface texturing for a light emitting device
JP2002319708A (ja) * 2001-04-23 2002-10-31 Matsushita Electric Works Ltd Ｌｅｄチップおよびｌｅｄ装置
JP4151282B2 (ja) * 2002-03-01 2008-09-17 日亜化学工業株式会社 窒化物系半導体発光素子
JP4590905B2 (ja) * 2003-10-31 2010-12-01 豊田合成株式会社 発光素子および発光装置
TW200419832A (en) * 2004-04-16 2004-10-01 Uni Light Technology Inc Structure for increasing the light-emitting efficiency of a light-emitting device
KR100638819B1 (ko) * 2005-05-19 2006-10-27 삼성전기주식회사 광추출효율이 개선된 수직구조 질화물 반도체 발광소자
JP4778745B2 (ja) * 2005-07-27 2011-09-21 パナソニック株式会社 半導体発光装置及びその製造方法
EP2206164A2 (en) * 2007-10-08 2010-07-14 3M Innovative Properties Company Light emitting diode with bonded semiconductor wavelength converter
EP2234182B1 (en) * 2007-12-28 2016-11-09 Nichia Corporation Semiconductor light emitting element and method for manufacturing the same
KR101533296B1 (ko) * 2008-07-08 2015-07-02 삼성전자주식회사 패턴 형성 기판을 구비한 질화물 반도체 발광소자 및 그제조방법
KR101064016B1 (ko) * 2008-11-26 2011-09-08 엘지이노텍 주식회사 발광 소자 및 그 제조방법
KR20100095134A (ko) * 2009-02-20 2010-08-30 엘지이노텍 주식회사 발광소자 및 그 제조방법
KR20120099709A (ko) * 2009-11-03 2012-09-11 더 리전츠 오브 더 유니버시티 오브 캘리포니아 하나 이상의 표면 위의 아연 산화물 나노로드 어레이들을 이용하는 발광 다이오드 구조물 및 이러한 아연 산화물 나노로드 어레이들을 저비용으로 제조하는 방법
KR100993093B1 (ko) * 2010-02-04 2010-11-08 엘지이노텍 주식회사 발광 소자 및 발광 소자 패키지
KR101047639B1 (ko) * 2010-04-19 2011-07-07 엘지이노텍 주식회사 반도체 발광소자, 발광 소자 패키지 및 반도체 발광 소자 제조방법
CN102280553A (zh) * 2010-06-10 2011-12-14 杨秋忠 覆晶发光二极管晶粒及其晶粒阵列
US8723201B2 (en) * 2010-08-20 2014-05-13 Invenlux Corporation Light-emitting devices with substrate coated with optically denser material
US8343788B2 (en) * 2011-04-19 2013-01-01 Epistar Corporation Light emitting device and manufacturing method thereof
CN102184846A (zh) * 2011-04-22 2011-09-14 东莞市中镓半导体科技有限公司 一种图形化衬底的制备方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090052159A1 (en) * 2007-08-22 2009-02-26 Saori Abe Light-emitting device and method for manufacturing the same

Also Published As

Publication number Publication date
US20130153947A1 (en) 2013-06-20
KR20130069215A (ko) 2013-06-26
JP2013128112A (ja) 2013-06-27
EP2605296A2 (en) 2013-06-19
EP2605296A3 (en) 2015-02-11
TW201342658A (zh) 2013-10-16
JP6153322B2 (ja) 2017-06-28
US9153756B2 (en) 2015-10-06
CN103165788B (zh) 2017-07-18
TWI587542B (zh) 2017-06-11
EP2605296B1 (en) 2018-06-13
CN103165788A (zh) 2013-06-19

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