CN103165788B - 发光器件 - Google Patents

发光器件 Download PDF

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Publication number
CN103165788B
CN103165788B CN201210548276.4A CN201210548276A CN103165788B CN 103165788 B CN103165788 B CN 103165788B CN 201210548276 A CN201210548276 A CN 201210548276A CN 103165788 B CN103165788 B CN 103165788B
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CN
China
Prior art keywords
pattern
luminescent device
substrate
light
extraction pattern
Prior art date
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Active
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CN201210548276.4A
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English (en)
Chinese (zh)
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CN103165788A (zh
Inventor
林显修
赵权泰
朴修益
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Suzhou Liyu Semiconductor Co ltd
Original Assignee
LG Innotek Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by LG Innotek Co Ltd filed Critical LG Innotek Co Ltd
Publication of CN103165788A publication Critical patent/CN103165788A/zh
Application granted granted Critical
Publication of CN103165788B publication Critical patent/CN103165788B/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/872—Periodic patterns for optical field-shaping, e.g. photonic bandgap structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/882—Scattering means

Landscapes

  • Led Devices (AREA)
  • Led Device Packages (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)
CN201210548276.4A 2011-12-16 2012-12-17 发光器件 Active CN103165788B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2011-0136834 2011-12-16
KR1020110136834A KR101894025B1 (ko) 2011-12-16 2011-12-16 발광소자

Publications (2)

Publication Number Publication Date
CN103165788A CN103165788A (zh) 2013-06-19
CN103165788B true CN103165788B (zh) 2017-07-18

Family

ID=47713765

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201210548276.4A Active CN103165788B (zh) 2011-12-16 2012-12-17 发光器件

Country Status (6)

Country Link
US (1) US9153756B2 (https=)
EP (1) EP2605296B1 (https=)
JP (1) JP6153322B2 (https=)
KR (1) KR101894025B1 (https=)
CN (1) CN103165788B (https=)
TW (1) TWI587542B (https=)

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WO2015033638A1 (ja) * 2013-09-03 2015-03-12 シャープ株式会社 半導体発光素子
DE102013112740B4 (de) * 2013-11-19 2021-03-18 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierendes Halbleiterbauelement
TWI614914B (zh) 2014-07-11 2018-02-11 晶元光電股份有限公司 發光元件及其製造方法
US10128420B2 (en) * 2016-12-30 2018-11-13 Lite-On Technology Corporation LED package structure and chip-scale light emitting unit
JP2018170333A (ja) * 2017-03-29 2018-11-01 株式会社東芝 半導体装置及びその製造方法
EP3474338B1 (en) 2017-08-24 2020-12-23 Soko Kagaku Co., Ltd. Method for manufacturing nitride semiconductor ultraviolet light emitting element, and nitride semiconductor ultraviolet light emitting element
CN111146314B (zh) * 2018-11-06 2021-02-23 中国科学院苏州纳米技术与纳米仿生研究所 提高氮化物半导体紫外发光二极管取光效率的方法及应用
KR102669515B1 (ko) * 2018-12-27 2024-05-28 삼성디스플레이 주식회사 디스플레이 장치
DE102019100624A1 (de) * 2019-01-11 2020-07-16 Osram Opto Semiconductors Gmbh Optoelektronisches halbleiterbauelement mit erster und zweiter dielektrischer schicht und verfahren zur herstellung des optoelektronischen halbleiterbauelements

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CN101821866A (zh) * 2007-10-08 2010-09-01 3M创新有限公司 具有粘接的半导体波长转换器的发光二极管
CN102184846A (zh) * 2011-04-22 2011-09-14 东莞市中镓半导体科技有限公司 一种图形化衬底的制备方法
CN102280553A (zh) * 2010-06-10 2011-12-14 杨秋忠 覆晶发光二极管晶粒及其晶粒阵列

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US5779924A (en) * 1996-03-22 1998-07-14 Hewlett-Packard Company Ordered interface texturing for a light emitting device
JP2002319708A (ja) * 2001-04-23 2002-10-31 Matsushita Electric Works Ltd Ｌｅｄチップおよびｌｅｄ装置
JP4151282B2 (ja) * 2002-03-01 2008-09-17 日亜化学工業株式会社 窒化物系半導体発光素子
JP4590905B2 (ja) * 2003-10-31 2010-12-01 豊田合成株式会社 発光素子および発光装置
TW200419832A (en) * 2004-04-16 2004-10-01 Uni Light Technology Inc Structure for increasing the light-emitting efficiency of a light-emitting device
KR100638819B1 (ko) * 2005-05-19 2006-10-27 삼성전기주식회사 광추출효율이 개선된 수직구조 질화물 반도체 발광소자
JP4778745B2 (ja) * 2005-07-27 2011-09-21 パナソニック株式会社 半導体発光装置及びその製造方法
JP4829190B2 (ja) * 2007-08-22 2011-12-07 株式会社東芝 発光素子
EP2234182B1 (en) * 2007-12-28 2016-11-09 Nichia Corporation Semiconductor light emitting element and method for manufacturing the same
KR101533296B1 (ko) * 2008-07-08 2015-07-02 삼성전자주식회사 패턴 형성 기판을 구비한 질화물 반도체 발광소자 및 그제조방법
KR101064016B1 (ko) * 2008-11-26 2011-09-08 엘지이노텍 주식회사 발광 소자 및 그 제조방법
KR20100095134A (ko) * 2009-02-20 2010-08-30 엘지이노텍 주식회사 발광소자 및 그 제조방법
KR20120099709A (ko) * 2009-11-03 2012-09-11 더 리전츠 오브 더 유니버시티 오브 캘리포니아 하나 이상의 표면 위의 아연 산화물 나노로드 어레이들을 이용하는 발광 다이오드 구조물 및 이러한 아연 산화물 나노로드 어레이들을 저비용으로 제조하는 방법
KR100993093B1 (ko) * 2010-02-04 2010-11-08 엘지이노텍 주식회사 발광 소자 및 발광 소자 패키지
KR101047639B1 (ko) * 2010-04-19 2011-07-07 엘지이노텍 주식회사 반도체 발광소자, 발광 소자 패키지 및 반도체 발광 소자 제조방법
US8723201B2 (en) * 2010-08-20 2014-05-13 Invenlux Corporation Light-emitting devices with substrate coated with optically denser material
US8343788B2 (en) * 2011-04-19 2013-01-01 Epistar Corporation Light emitting device and manufacturing method thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101821866A (zh) * 2007-10-08 2010-09-01 3M创新有限公司 具有粘接的半导体波长转换器的发光二极管
CN102280553A (zh) * 2010-06-10 2011-12-14 杨秋忠 覆晶发光二极管晶粒及其晶粒阵列
CN102184846A (zh) * 2011-04-22 2011-09-14 东莞市中镓半导体科技有限公司 一种图形化衬底的制备方法

Also Published As

Publication number Publication date
US20130153947A1 (en) 2013-06-20
KR20130069215A (ko) 2013-06-26
JP2013128112A (ja) 2013-06-27
EP2605296A2 (en) 2013-06-19
EP2605296A3 (en) 2015-02-11
TW201342658A (zh) 2013-10-16
JP6153322B2 (ja) 2017-06-28
US9153756B2 (en) 2015-10-06
TWI587542B (zh) 2017-06-11
EP2605296B1 (en) 2018-06-13
KR101894025B1 (ko) 2018-09-03
CN103165788A (zh) 2013-06-19

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Effective date of registration: 20210816

Address after: 168 Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee after: Suzhou Leyu Semiconductor Co.,Ltd.

Address before: Seoul, South Kerean

Patentee before: LG INNOTEK Co.,Ltd.

CP03 Change of name, title or address
CP03 Change of name, title or address

Address after: 215499 No. 168, Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee after: Suzhou Liyu Semiconductor Co.,Ltd.

Country or region after: China

Address before: 168 Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee before: Suzhou Leyu Semiconductor Co.,Ltd.

Country or region before: China