TWI587477B - 可靠表面安裝積體功率模組 - Google Patents

可靠表面安裝積體功率模組 Download PDF

Info

Publication number
TWI587477B
TWI587477B TW102125293A TW102125293A TWI587477B TW I587477 B TWI587477 B TW I587477B TW 102125293 A TW102125293 A TW 102125293A TW 102125293 A TW102125293 A TW 102125293A TW I587477 B TWI587477 B TW I587477B
Authority
TW
Taiwan
Prior art keywords
layer
dielectric
dbc
surface mount
semiconductor device
Prior art date
Application number
TW102125293A
Other languages
English (en)
Chinese (zh)
Other versions
TW201413916A (zh
Inventor
艾朗 維盧派克夏 格達
保羅 艾倫 麥克考奈利
夏卡堤 辛夫 喬罕
Original Assignee
奇異電器公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 奇異電器公司 filed Critical 奇異電器公司
Publication of TW201413916A publication Critical patent/TW201413916A/zh
Application granted granted Critical
Publication of TWI587477B publication Critical patent/TWI587477B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/255—Arrangements for cooling characterised by their materials having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H10W70/093—Connecting or disconnecting other interconnections thereto or therefrom, e.g. connecting bond wires or bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/611—Insulating or insulated package substrates; Interposers; Redistribution layers for connecting multiple chips together
    • H10W70/614—Insulating or insulated package substrates; Interposers; Redistribution layers for connecting multiple chips together the multiple chips being integrally enclosed
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/65—Shapes or dispositions of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/69—Insulating materials thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H10W74/012—Manufacture or treatment of encapsulations on active surfaces of flip-chip devices, e.g. forming underfills
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H10W74/014—Manufacture or treatment using batch processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/114—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations
    • H10W74/117—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations the substrate having spherical bumps for external connection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/127—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed characterised by arrangements for sealing or adhesion
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/134—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations being in grooves in the semiconductor body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/15—Encapsulations, e.g. protective coatings characterised by their shape or disposition on active surfaces of flip-chip devices, e.g. underfills
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/401—Package configurations characterised by multiple insulating or insulated package substrates, interposers or RDLs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/321—Structures or relative sizes of die-attach connectors
    • H10W72/325—Die-attach connectors having a filler embedded in a matrix
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/352—Materials of die-attach connectors comprising metals or metalloids, e.g. solders
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/9413—Dispositions of bond pads on encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/10—Configurations of laterally-adjacent chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Wire Bonding (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Combinations Of Printed Boards (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
TW102125293A 2012-07-30 2013-07-15 可靠表面安裝積體功率模組 TWI587477B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13/561,811 US8941208B2 (en) 2012-07-30 2012-07-30 Reliable surface mount integrated power module

Publications (2)

Publication Number Publication Date
TW201413916A TW201413916A (zh) 2014-04-01
TWI587477B true TWI587477B (zh) 2017-06-11

Family

ID=49035265

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102125293A TWI587477B (zh) 2012-07-30 2013-07-15 可靠表面安裝積體功率模組

Country Status (7)

Country Link
US (2) US8941208B2 (https=)
EP (1) EP2693472B1 (https=)
JP (1) JP6302184B2 (https=)
KR (1) KR102088692B1 (https=)
CN (3) CN111508909B (https=)
SG (1) SG196753A1 (https=)
TW (1) TWI587477B (https=)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8804339B2 (en) * 2011-02-28 2014-08-12 Toyota Motor Engineering & Manufacturing North America, Inc. Power electronics assemblies, insulated metal substrate assemblies, and vehicles incorporating the same
DE102011078811B3 (de) * 2011-07-07 2012-05-24 Semikron Elektronik Gmbh & Co. Kg Leistungselektronisches System mit einer Kühleinrichtung
KR20130129712A (ko) * 2012-05-21 2013-11-29 페어차일드코리아반도체 주식회사 반도체 패키지 및 이의 제조방법
US8941208B2 (en) * 2012-07-30 2015-01-27 General Electric Company Reliable surface mount integrated power module
US10269688B2 (en) 2013-03-14 2019-04-23 General Electric Company Power overlay structure and method of making same
US8987876B2 (en) 2013-03-14 2015-03-24 General Electric Company Power overlay structure and method of making same
US9312231B2 (en) * 2013-10-31 2016-04-12 Freescale Semiconductor, Inc. Method and apparatus for high temperature semiconductor device packages and structures using a low temperature process
US9659837B2 (en) 2015-01-30 2017-05-23 Semiconductor Components Industries, Llc Direct bonded copper semiconductor packages and related methods
JP6418126B2 (ja) 2015-10-09 2018-11-07 三菱電機株式会社 半導体装置
US9443792B1 (en) * 2015-10-31 2016-09-13 Ixys Corporation Bridging DMB structure for wire bonding in a power semiconductor device module
JP6403741B2 (ja) * 2016-09-30 2018-10-10 三菱電機株式会社 表面実装型半導体パッケージ装置
US9953913B1 (en) 2016-12-12 2018-04-24 General Electric Company Electronics package with embedded through-connect structure and method of manufacturing thereof
US9953917B1 (en) 2016-12-12 2018-04-24 General Electric Company Electronics package with embedded through-connect and resistor structure and method of manufacturing thereof
TWI648854B (zh) * 2017-06-14 2019-01-21 Win Semiconductors Corp. 用以減少化合物半導體晶圓變形之改良結構
US10541153B2 (en) * 2017-08-03 2020-01-21 General Electric Company Electronics package with integrated interconnect structure and method of manufacturing thereof
US10541209B2 (en) 2017-08-03 2020-01-21 General Electric Company Electronics package including integrated electromagnetic interference shield and method of manufacturing thereof
US10804115B2 (en) 2017-08-03 2020-10-13 General Electric Company Electronics package with integrated interconnect structure and method of manufacturing thereof
US10332832B2 (en) 2017-08-07 2019-06-25 General Electric Company Method of manufacturing an electronics package using device-last or device-almost last placement
US10892237B2 (en) * 2018-12-14 2021-01-12 General Electric Company Methods of fabricating high voltage semiconductor devices having improved electric field suppression
DE102019121012B4 (de) * 2019-08-02 2024-06-13 Infineon Technologies Ag Package und Verfahren zum Herstellen eines Packages
US11398445B2 (en) 2020-05-29 2022-07-26 General Electric Company Mechanical punched via formation in electronics package and electronics package formed thereby
CN118451543A (zh) * 2022-03-31 2024-08-06 华为技术有限公司 芯片封装结构、电子设备及芯片封装结构的制备方法
US12431402B2 (en) 2022-07-26 2025-09-30 Avago Technologies International Sales Pte. Limited Stress and warpage improvements for stiffener ring package with exposed die(s)
TWI869906B (zh) * 2023-06-29 2025-01-11 同欣電子工業股份有限公司 預模製直接覆銅基板及其製造方法
GB2642027A (en) * 2024-06-17 2025-12-31 Cambridge Gan Devices Ltd Fan-out panel-level packaging with a direct bonded copper substrate

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6306680B1 (en) * 1999-02-22 2001-10-23 General Electric Company Power overlay chip scale packages for discrete power devices
US20060103005A1 (en) * 2002-06-20 2006-05-18 Jurgen Schulz-Harder Metal-ceramic substrate for electric circuits or modules, method for producing one such substrate and module comprising one such substrate
US20060128069A1 (en) * 2004-12-10 2006-06-15 Phoenix Precision Technology Corporation Package structure with embedded chip and method for fabricating the same
US7190581B1 (en) * 2005-01-11 2007-03-13 Midwest Research Institute Low thermal resistance power module assembly
US20100230800A1 (en) * 2009-03-13 2010-09-16 Richard Alfred Beaupre Double side cooled power module with power overlay

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6104078A (en) * 1994-03-09 2000-08-15 Denso Corporation Design for a semiconductor device having elements isolated by insulating regions
US5880530A (en) 1996-03-29 1999-03-09 Intel Corporation Multiregion solder interconnection structure
US6404065B1 (en) 1998-07-31 2002-06-11 I-Xys Corporation Electrically isolated power semiconductor package
JP3683179B2 (ja) 2000-12-26 2005-08-17 松下電器産業株式会社 半導体装置及びその製造方法
JP4969738B2 (ja) * 2001-06-28 2012-07-04 株式会社東芝 セラミックス回路基板およびそれを用いた半導体モジュール
US6908784B1 (en) * 2002-03-06 2005-06-21 Micron Technology, Inc. Method for fabricating encapsulated semiconductor components
CN2613046Y (zh) * 2003-04-17 2004-04-21 威盛电子股份有限公司 芯片封装结构
JP3809168B2 (ja) * 2004-02-03 2006-08-16 株式会社東芝 半導体モジュール
JP4207896B2 (ja) * 2005-01-19 2009-01-14 富士電機デバイステクノロジー株式会社 半導体装置
JP4793622B2 (ja) * 2005-03-04 2011-10-12 日立金属株式会社 セラミックス回路基板およびパワーモジュール並びにパワーモジュールの製造方法
US20070126085A1 (en) * 2005-12-02 2007-06-07 Nec Electronics Corporation Semiconductor device and method of manufacturing the same
TWI279897B (en) * 2005-12-23 2007-04-21 Phoenix Prec Technology Corp Embedded semiconductor chip structure and method for fabricating the same
US8018056B2 (en) 2005-12-21 2011-09-13 International Rectifier Corporation Package for high power density devices
WO2007105361A1 (ja) * 2006-03-08 2007-09-20 Kabushiki Kaisha Toshiba 電子部品モジュール
US8049338B2 (en) * 2006-04-07 2011-11-01 General Electric Company Power semiconductor module and fabrication method
US7999369B2 (en) 2006-08-29 2011-08-16 Denso Corporation Power electronic package having two substrates with multiple semiconductor chips and electronic components
KR101391924B1 (ko) 2007-01-05 2014-05-07 페어차일드코리아반도체 주식회사 반도체 패키지
US20080190748A1 (en) * 2007-02-13 2008-08-14 Stephen Daley Arthur Power overlay structure for mems devices and method for making power overlay structure for mems devices
DE102007041921A1 (de) * 2007-09-04 2009-03-05 Siemens Ag Verfahren zur Herstellung und Kontaktierung von elektronischen Bauelementen mittels einer Substratplatte, insbesondere DCB-Keramik-Substratplatte
US8030752B2 (en) * 2007-12-18 2011-10-04 Samsung Electro-Mechanics Co., Ltd. Method of manufacturing semiconductor package and semiconductor plastic package using the same
WO2009116439A1 (ja) * 2008-03-17 2009-09-24 三菱マテリアル株式会社 ヒートシンク付パワーモジュール用基板及びその製造方法、並びに、ヒートシンク付パワーモジュール、パワーモジュール用基板
JP5284155B2 (ja) * 2008-03-24 2013-09-11 日本特殊陶業株式会社 部品内蔵配線基板
JP2010263080A (ja) * 2009-05-07 2010-11-18 Denso Corp 半導体装置
US8409926B2 (en) * 2010-03-09 2013-04-02 Stats Chippac, Ltd. Semiconductor device and method of forming insulating layer around semiconductor die
CN201667332U (zh) * 2010-03-29 2010-12-08 比亚迪股份有限公司 一种半导体功率模块
US8531027B2 (en) * 2010-04-30 2013-09-10 General Electric Company Press-pack module with power overlay interconnection
JP2011253950A (ja) * 2010-06-02 2011-12-15 Mitsubishi Electric Corp 電力半導体装置
CN102339818B (zh) 2010-07-15 2014-04-30 台达电子工业股份有限公司 功率模块及其制造方法
US8114712B1 (en) * 2010-12-22 2012-02-14 General Electric Company Method for fabricating a semiconductor device package
CN202135401U (zh) * 2011-05-30 2012-02-01 宝鸡市博瑞德金属材料有限公司 高导热型铝基板
US8941208B2 (en) * 2012-07-30 2015-01-27 General Electric Company Reliable surface mount integrated power module

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6306680B1 (en) * 1999-02-22 2001-10-23 General Electric Company Power overlay chip scale packages for discrete power devices
US20060103005A1 (en) * 2002-06-20 2006-05-18 Jurgen Schulz-Harder Metal-ceramic substrate for electric circuits or modules, method for producing one such substrate and module comprising one such substrate
US20060128069A1 (en) * 2004-12-10 2006-06-15 Phoenix Precision Technology Corporation Package structure with embedded chip and method for fabricating the same
US7190581B1 (en) * 2005-01-11 2007-03-13 Midwest Research Institute Low thermal resistance power module assembly
US20100230800A1 (en) * 2009-03-13 2010-09-16 Richard Alfred Beaupre Double side cooled power module with power overlay

Also Published As

Publication number Publication date
CN111508909A (zh) 2020-08-07
JP6302184B2 (ja) 2018-03-28
US20140029234A1 (en) 2014-01-30
KR20140016204A (ko) 2014-02-07
US20150069612A1 (en) 2015-03-12
KR102088692B1 (ko) 2020-03-13
CN103579137A (zh) 2014-02-12
EP2693472A3 (en) 2017-08-09
US8941208B2 (en) 2015-01-27
EP2693472B1 (en) 2022-12-14
CN110060962B (zh) 2023-09-26
JP2014027272A (ja) 2014-02-06
EP2693472A2 (en) 2014-02-05
TW201413916A (zh) 2014-04-01
US9184124B2 (en) 2015-11-10
CN111508909B (zh) 2024-12-17
CN103579137B (zh) 2020-03-13
CN110060962A (zh) 2019-07-26
SG196753A1 (en) 2014-02-13

Similar Documents

Publication Publication Date Title
TWI587477B (zh) 可靠表面安裝積體功率模組
US10186477B2 (en) Power overlay structure and method of making same
TWI628750B (zh) 功率覆蓋結構及其製造方法
CN102956594B (zh) 带有引线框连接的功率覆盖结构