TWI586489B - Method for manufacturing glass substrates - Google Patents

Method for manufacturing glass substrates Download PDF

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TWI586489B
TWI586489B TW102137963A TW102137963A TWI586489B TW I586489 B TWI586489 B TW I586489B TW 102137963 A TW102137963 A TW 102137963A TW 102137963 A TW102137963 A TW 102137963A TW I586489 B TWI586489 B TW I586489B
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glass substrate
sensor
distance
end surface
chamfering
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TW102137963A
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TW201416177A (en
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Masayuki Ogawa
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Avanstrate Inc
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玻璃基板之製造方法 Method for manufacturing glass substrate

本發明係關於一種玻璃基板之製造方法。 The present invention relates to a method of manufacturing a glass substrate.

用於液晶顯示器及電漿顯示器等平板顯示器(FPD)之玻璃基板例如係藉由溢流下拉法而製造。於溢流下拉法中,流入至成形體並溢流之熔融玻璃沿成形體之表面流下,並於成形體之下端之附近合流,從而成形為玻璃片。已成形之玻璃片被一面向下方拉伸一面冷卻,並被切斷為特定之大小從而製造玻璃基板。玻璃基板係經過端面加工步驟、表面清洗步驟及檢查步驟等而捆包並出貨。 A glass substrate for a flat panel display (FPD) such as a liquid crystal display or a plasma display is manufactured, for example, by an overflow down-draw method. In the overflow down-draw method, the molten glass which flows into the molded body and overflows flows down the surface of the formed body, and merges in the vicinity of the lower end of the formed body, thereby forming into a glass piece. The formed glass piece is cooled while being stretched downward, and cut into a specific size to manufacture a glass substrate. The glass substrate is bundled and shipped through an end surface processing step, a surface cleaning step, an inspection step, and the like.

於將已成形之玻璃片切斷為特定之大小之步驟中,一般而言,使用藉由切割器或雷射之切斷方法。於藉由切割器之玻璃片之切斷方法中,由於將縫隙機械地添加至玻璃片中而切斷,因此於已切斷之玻璃基板之端面形成有數μm~100μm左右之深度之裂縫。該裂縫會引起玻璃基板之機械強度之劣化。又,於藉由雷射之玻璃片之切斷方法中,由於利用熱應力將縫隙添加至玻璃片中而將玻璃片切斷,因此已切斷之玻璃基板之端面成為鋒利並易損壞之狀態。形成於已切斷之玻璃基板之端面之裂縫或鋒利之部分藉由磨削及研磨端面而除去。即,為了提高玻璃基板之機械強度,抑制玻璃基板之缺陷之產生,並使後續步驟中之操作變得容易,而進行玻璃基板之端面加工步驟。 In the step of cutting the formed glass sheet into a specific size, generally, a cutting method by a cutter or a laser is used. In the method of cutting a glass piece by a cutter, since the slit is mechanically added to the glass piece and cut, a crack having a depth of about several μm to 100 μm is formed on the end surface of the cut glass substrate. This crack causes deterioration of the mechanical strength of the glass substrate. Further, in the method of cutting a glass piece by laser, since the glass piece is cut by adding a slit to the glass piece by thermal stress, the end surface of the cut glass substrate becomes sharp and easily damaged. . The crack or sharp portion formed on the end surface of the cut glass substrate is removed by grinding and grinding the end faces. That is, in order to improve the mechanical strength of the glass substrate, suppress the occurrence of defects of the glass substrate, and facilitate the operation in the subsequent step, the end surface processing step of the glass substrate is performed.

[先前技術文獻] [Previous Technical Literature] [專利文獻] [Patent Literature]

[專利文獻1]日本專利特開2011-110648號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2011-110648

作為玻璃基板之端面加工步驟之例,於專利文獻1(日本專利特開2011-110648號公報)中,揭示有使磨石沿已切斷之玻璃基板之端面追隨而對玻璃基板進行倒角加工之方法。於該方法中,藉由雷射位移計測定固定於平台之玻璃基板之端面之位置,並算出磨石之端面之加工開始位置及加工結束位置。具體而言,自藉由雷射位移計之測定值,藉由外插內插法算出端面之加工開始位置及加工結束位置之座標,並基於該等座標與成為基準之座標之差異、及所需之磨削裕度,對端面之加工開始位置及加工結束位置進行修正。 As an example of the step of processing the end surface of the glass substrate, the patent document 1 (Japanese Patent Laid-Open Publication No. 2011-110648) discloses that the grinding glass is chamfered along the end surface of the cut glass substrate. The method. In this method, the position of the end surface of the glass substrate fixed to the stage is measured by a laser displacement meter, and the processing start position and the processing end position of the end surface of the grindstone are calculated. Specifically, the coordinates of the machining start position and the machining end position of the end face are calculated by the extrapolation interpolation method from the measured value of the laser displacement meter, and based on the difference between the coordinate and the coordinate to be the reference, The required grinding margin is corrected for the machining start position and machining end position of the end face.

然而,於為了實現玻璃基板之生產線之省空間化,而於端面加工步驟中在同一平台上進行玻璃基板之端面之位置測定及端面之加工之情形時,為了測定玻璃基板之端面之位置而使用雷射位移計並不適合。例如,於對玻璃基板之端面進行倒角加工之前,存在於向倒角磨石與玻璃基板之端面之接觸部供給磨削液時,磨削液附著於雷射位移計之檢測部,從而雷射位移計之檢測精度降低之虞。因此,於在同一平台上進行玻璃基板之端面之位置測定及端面之加工之情形時,使用雷射位移計測定玻璃基板之位置之專利文獻1所揭示之方法不易以較高之精度對玻璃基板之端面進行加工。 However, in order to realize the space saving of the production line of the glass substrate, when the position measurement of the end surface of the glass substrate and the processing of the end surface are performed on the same platform in the end surface processing step, the position of the end surface of the glass substrate is used for measurement. Laser displacement meters are not suitable. For example, before the chamfering process is performed on the end surface of the glass substrate, when the grinding fluid is supplied to the contact portion between the chamfering grindstone and the end surface of the glass substrate, the grinding fluid adheres to the detecting portion of the laser displacement meter, thereby The detection accuracy of the displacement meter is reduced. Therefore, when the position measurement of the end surface of the glass substrate and the processing of the end surface are performed on the same platform, the method disclosed in Patent Document 1 for measuring the position of the glass substrate using a laser displacement meter is not easy to apply the glass substrate with high precision. The end faces are processed.

本發明之目的在於提供一種可於較小之空間內、且精度較佳地進行玻璃基板之端面加工之玻璃基板之製造方法。 An object of the present invention is to provide a method for producing a glass substrate which can perform end surface processing of a glass substrate in a small space with high precision.

本發明之玻璃基板之製造方法包括基板固定步驟、位置資訊取得步驟、加工位置算出步驟、及端面加工步驟。基板固定步驟係將載置於平台之玻璃基板固定於平台。位置資訊取得步驟係取得固定於平 台之玻璃基板之端面之位置資訊。加工位置算出步驟係基於玻璃基板之端面之位置資訊,算出用於將玻璃基板之端面進行倒角加工之倒角磨石之加工開始位置及加工結束位置。端面加工步驟係藉由向倒角磨石與端面之接觸部供給磨削液,並使倒角磨石自加工開始位置向加工結束位置移動,而將玻璃基板之端面進行倒角加工。倒角磨石以其至玻璃基板之端面為止之距離可變更之方式可沿第1軸移動。倒角磨石以與玻璃基板之端面相對向之方式可沿與第1軸正交之第2軸移動。於位置資訊取得步驟中,藉由第1感測器與第2感測器,取得玻璃基板之端面之複數個點之位置資訊。第1感測器連結於倒角磨石且可與倒角磨石一併移動。第2感測器可沿第1軸移動。於加工位置算出步驟中,算出為了使倒角磨石沿第1軸移動至加工開始位置所需之距離即加工修正值。 The method for producing a glass substrate of the present invention includes a substrate fixing step, a position information obtaining step, a processing position calculating step, and an end surface processing step. The substrate fixing step fixes the glass substrate placed on the platform to the platform. The location information acquisition step is fixed at flat The position information of the end face of the glass substrate of the table. The machining position calculation step calculates a machining start position and a machining end position of the chamfering grindstone for chamfering the end surface of the glass substrate based on the position information of the end surface of the glass substrate. In the end surface processing step, the end surface of the glass substrate is chamfered by supplying the grinding liquid to the contact portion between the chamfering grindstone and the end surface, and moving the chamfering grindstone from the processing start position to the processing end position. The chamfering grindstone can be moved along the first axis so that the distance to the end surface of the glass substrate can be changed. The chamfering grindstone is movable along a second axis orthogonal to the first axis so as to face the end surface of the glass substrate. In the position information obtaining step, position information of a plurality of points of the end surface of the glass substrate is obtained by the first sensor and the second sensor. The first sensor is coupled to the chamfered grindstone and movable together with the chamfering grindstone. The second sensor is movable along the first axis. In the machining position calculation step, a machining correction value that is a distance required to move the chamfering grindstone to the machining start position along the first axis is calculated.

於該玻璃基板之製造方法中,首先,測定固定於平台上之玻璃基板之端面之位置,其次,在不使玻璃基板移動之情況下藉由倒角磨石加工玻璃基板之端面。玻璃基板之端面加工係藉由向端面與倒角磨石之接觸部供給磨削液,於濕潤(wet)之環境下進行。測定玻璃基板之端面之位置之第1感測器及第2感測器係即便附著有磨削液檢測精度亦不會降低之接觸式感測器。藉由第1感測器及第2感測器,算出玻璃基板之端面之加工開始位置及加工結束位置。於玻璃基板之端面之加工前,藉由將倒角磨石之位置僅變更加工修正值,使倒角磨石移動至加工開始位置。並且,藉由使倒角磨石自加工開始位置移動至加工結束位置,利用倒角磨石加工玻璃基板之端面。 In the method for producing a glass substrate, first, the position of the end surface of the glass substrate fixed on the stage is measured, and second, the end surface of the glass substrate is processed by chamfering the grindstone without moving the glass substrate. The end surface processing of the glass substrate is performed by supplying a grinding liquid to the contact portion between the end surface and the chamfering grindstone in a wet environment. The first sensor and the second sensor that measure the position of the end surface of the glass substrate are contact sensors that do not reduce the accuracy of the detection of the grinding fluid. The processing start position and the processing end position of the end surface of the glass substrate were calculated by the first sensor and the second sensor. Before the processing of the end faces of the glass substrate, the chamfering grindstone is moved to the processing start position by changing the machining correction value only by the position of the chamfering grindstone. Further, by moving the chamfering grindstone from the machining start position to the machining end position, the end surface of the glass substrate is processed by the chamfering grindstone.

因此,該玻璃基板之製造方法係於在濕潤之環境下進行玻璃基板之端面加工之情形時,可於同一平台上進行玻璃基板之端面之位置之測定及玻璃基板之端面之加工,因此可於較少之空間內進行玻璃基板之端面加工。又,藉由於玻璃基板之端面之加工前,基於端面之位 置資訊對倒角磨石之位置進行修正,可精度較佳地進行玻璃基板之端面加工。 Therefore, when the glass substrate is produced by performing the end surface processing of the glass substrate in a wet environment, the position of the end surface of the glass substrate and the processing of the end surface of the glass substrate can be performed on the same platform. The end face processing of the glass substrate is performed in a small space. Moreover, by the end face of the glass substrate before processing, based on the position of the end face The information is corrected for the position of the chamfering grindstone, and the end surface processing of the glass substrate can be performed with high precision.

又,於位置資訊取得步驟中,較佳為將藉由第1感測器取得之第1軸方向之端面之位置資訊與藉由第2感測器取得之第1軸方向之端面之位置資訊關聯。於該情形時,位置資訊取得步驟係於取得位置資訊之前,使第1感測器沿第2軸移動至與第2感測器於第2軸方向上相同之位置,進而,使用第1感測器取得第1軸方向上之第2感測器之位置。 Further, in the position information obtaining step, it is preferable that the position information of the end surface in the first axial direction obtained by the first sensor and the position information of the end surface in the first axial direction obtained by the second sensor are used. Association. In this case, the position information acquisition step moves the first sensor along the second axis to the same position as the second sensor in the second axis direction before acquiring the position information, and further uses the first sense. The detector takes the position of the second sensor in the first axis direction.

又,於加工位置算出步驟中,較佳為基於第1距離、第2距離及第3距離,算出加工修正值。第1距離係第1感測器與第2感測器之間之第2軸方向之距離。第2距離係第1感測器與倒角磨石之間之第2軸方向之距離。第3距離係藉由第2感測器測定之、預先設定之端面之基準位置與端面之位置之間之第1軸方向的距離。 Further, in the machining position calculation step, it is preferable to calculate the machining correction value based on the first distance, the second distance, and the third distance. The first distance is a distance between the first sensor and the second sensor in the second axial direction. The second distance is the distance between the first sensor and the chamfering grindstone in the second axial direction. The third distance is a distance in the first axial direction between the reference position of the predetermined end face and the position of the end face measured by the second sensor.

又,於加工位置算出步驟中,加工修正值較佳為藉由對第2距離乘以第3距離所得之值除以第1距離而算出。 Further, in the machining position calculation step, the machining correction value is preferably calculated by dividing the value obtained by multiplying the second distance by the third distance by the first distance.

於該玻璃基板之製造方法中,在測定玻璃基板之端面之位置之前,藉由預先將第1感測器之位置與第2感測器之位置關聯,正確地測定第1感測器與第2感測器之間之距離。又,由於第1感測器連結於倒角磨石,因此已預先確定第1感測器與倒角磨石之間之距離。因此,基於第1感測器、第2感測器及倒角磨石之間之位置關係、及藉由第2感測器測定之玻璃基板之端面之位置,可算出倒角磨石之加工修正值。 In the method for producing a glass substrate, the first sensor and the first sensor are accurately measured by correlating the position of the first sensor with the position of the second sensor before measuring the position of the end surface of the glass substrate. 2 The distance between the sensors. Further, since the first sensor is coupled to the chamfering grindstone, the distance between the first sensor and the chamfering grindstone is predetermined. Therefore, the processing of the chamfering grindstone can be calculated based on the positional relationship between the first sensor, the second sensor, and the chamfering grindstone, and the position of the end surface of the glass substrate measured by the second sensor. Correction value.

又,第1感測器較佳為設置於與倒角磨石之高度位置不同之高度位置,且可與倒角磨石一併於鉛垂方向上移動。又,於位置資訊取得步驟中,較佳為以第1感測器之高度位置成為與端面之高度位置相同之方式,調整第1感測器之高度位置。又,於端面加工步驟中,較佳為以倒角磨石之高度位置成為與端面之高度位置相同之方式,調整倒 角磨石之高度位置。 Further, the first sensor is preferably disposed at a height position different from the height position of the chamfering grindstone, and is movable in the vertical direction together with the chamfering grindstone. Further, in the position information obtaining step, it is preferable to adjust the height position of the first sensor so that the height position of the first sensor is the same as the height position of the end surface. Further, in the end surface processing step, it is preferable that the height position of the chamfered grindstone is the same as the height position of the end surface, and the adjustment is performed. The height position of the angle grindstone.

於該玻璃基板之製造方法中,在以第1感測器測定玻璃基板之端面之位置時,由於倒角磨石位於與玻璃基板不同之高度位置,因此倒角磨石不會妨礙藉由第1感測器之端面之測定。反之,於倒角磨石加工玻璃基板之端面時,由於第1感測器位於與玻璃基板不同之高度位置,因此第1感測器不會妨礙藉由倒角磨石之端面之加工。 In the method for producing a glass substrate, when the position of the end surface of the glass substrate is measured by the first sensor, since the chamfering grindstone is located at a different height from the glass substrate, the chamfering grindstone does not interfere with the 1 Determination of the end face of the sensor. On the other hand, when the end surface of the glass substrate is processed by the chamfering grindstone, since the first sensor is located at a different height from the glass substrate, the first sensor does not hinder the processing of the end surface by the chamfering grindstone.

本發明之玻璃基板之製造方法可於較小之空間內、且精度較佳地進行玻璃基板之端面加工。 The method for producing a glass substrate of the present invention can perform end surface processing of a glass substrate in a small space with high precision.

10‧‧‧玻璃基板 10‧‧‧ glass substrate

11‧‧‧端面 11‧‧‧ end face

11a‧‧‧延長線 11a‧‧‧Extension line

12‧‧‧端面 12‧‧‧ end face

13‧‧‧端面 13‧‧‧ end face

14‧‧‧端面 14‧‧‧ end face

19‧‧‧底板 19‧‧‧floor

20‧‧‧玻璃基板搬送裝置 20‧‧‧Glass substrate transfer device

22‧‧‧機械手 22‧‧‧ Robot

30‧‧‧吸附平台(平台) 30‧‧‧Adsorption platform (platform)

32‧‧‧支持接腳 32‧‧‧Support pins

40、42‧‧‧倒角磨石 40, 42‧‧‧Chamfering grindstone

50、52‧‧‧第1感測器 50, 52‧‧‧1st sensor

60、62‧‧‧第2感測器 60, 62‧‧‧2nd sensor

64‧‧‧氣缸 64‧‧‧ cylinder

70‧‧‧移動機構 70‧‧‧Mobile agencies

72‧‧‧移動機構 72‧‧‧Mobile agencies

80‧‧‧磨削液供給裝置 80‧‧‧grinding fluid supply device

90‧‧‧水供給裝置 90‧‧‧Water supply device

100‧‧‧玻璃基板端面加工裝置 100‧‧‧Glass substrate end face processing device

140‧‧‧倒角磨石 140‧‧‧Chamfering grindstone

140a‧‧‧金剛石磨輪 140a‧‧‧Diamond grinding wheel

140b‧‧‧樹脂結合研磨輪 140b‧‧‧Resin bonded grinding wheel

150‧‧‧旋轉軸 150‧‧‧Rotary axis

D‧‧‧加工修正值 D‧‧‧Process correction value

L1‧‧‧第1距離 L1‧‧‧1st distance

L2‧‧‧第2距離 L2‧‧‧2nd distance

L3‧‧‧第3距離 L3‧‧‧3rd distance

P1‧‧‧第1點 P1‧‧‧1st point

P2‧‧‧第2點 P2‧‧‧2nd point

P3‧‧‧第3點 P3‧‧‧3rd point

P4‧‧‧第4點 P4‧‧‧4th point

P5‧‧‧第5點 P5‧‧‧5th point

T1‧‧‧三角形 T1‧‧‧ triangle

T2‧‧‧三角形 T2‧‧‧ triangle

Y軸‧‧‧第1軸 Y axis ‧‧‧1st axis

X軸‧‧‧第2軸 X-axis ‧‧‧2nd axis

ZL‧‧‧零基準線 ZL‧‧‧ zero baseline

θ‧‧‧角度 Θ‧‧‧ angle

圖1係實施形態之玻璃基板之製造步驟之流程圖。 Fig. 1 is a flow chart showing the steps of manufacturing the glass substrate of the embodiment.

圖2係實施形態之玻璃基板端面加工裝置之俯視圖。 Fig. 2 is a plan view showing a glass substrate end surface processing apparatus according to an embodiment.

圖3係實施形態之玻璃基板端面加工裝置之側視圖。 Fig. 3 is a side view of the glass substrate end surface processing apparatus of the embodiment.

圖4係表示玻璃基板搬送裝置將玻璃基板載置於吸附平台之上之狀態之圖。 4 is a view showing a state in which a glass substrate transfer device mounts a glass substrate on an adsorption stage.

圖5係玻璃基板之端面之加工步驟之流程圖。 Figure 5 is a flow chart showing the processing steps of the end faces of the glass substrate.

圖6係表示玻璃基板之端面、倒角磨石、第1感測器及第2感測器之位置關係之概略圖。 Fig. 6 is a schematic view showing the positional relationship between the end surface of the glass substrate, the chamfering grindstone, the first sensor, and the second sensor.

圖7係表示玻璃基板之端面、倒角磨石、第1感測器及第2感測器之位置關係之概略圖。 Fig. 7 is a schematic view showing the positional relationship between the end surface of the glass substrate, the chamfering grindstone, the first sensor, and the second sensor.

圖8係變化例之倒角磨石之外觀圖。 Fig. 8 is an external view of a chamfered grindstone of a variation.

(1)玻璃基板之製造步驟之概略 (1) Outline of the manufacturing steps of the glass substrate

一面參照圖式,一面對本發明之玻璃基板之製造方法之實施形態進行說明。首先,對藉由本實施形態所使用之玻璃基板端面加工裝置100加工之玻璃基板10之製造步驟進行說明。玻璃基板10係用於液 晶顯示器、電漿顯示器及有機EL(ElectroLuminescence,電致發光)顯示器等平板顯示器(FPD)之製造。玻璃基板10例如具有0.2mm~0.8mm之厚度,且具有縱680mm~2200mm及橫880mm~2500mm之尺寸。 An embodiment of a method of manufacturing a glass substrate of the present invention will be described with reference to the drawings. First, a manufacturing procedure of the glass substrate 10 processed by the glass substrate end surface processing apparatus 100 used in the present embodiment will be described. Glass substrate 10 is used for liquid The manufacture of flat panel displays (FPDs) such as crystal displays, plasma displays, and organic EL (Electro Luminescence) displays. The glass substrate 10 has a thickness of, for example, 0.2 mm to 0.8 mm, and has a size of 680 mm to 2200 mm in length and 880 mm to 2500 mm in width.

作為玻璃基板10之一例,可列舉具有以下之組成之玻璃。 As an example of the glass substrate 10, the glass which has the following composition is mentioned.

(a)SiO2:50質量%~70質量%,(b)Al2O3:10質量%~25質量%,(c)B2O3:5質量%~18質量%,(d)MgO:O質量%~10質量%,(e)CaO:O質量%~20質量%,(f)SrO:0質量%~20質量%,(g)BaO:0質量%~10質量%,(h)RO:5質量%~20質量%(R係選自Mg、Ca、Sr及Ba中之至少1種),(i)R'2O:0質量%~2.0質量%(R'係選自Li、Na及K中之至少1種),(j)選自SnO2、Fe2O3及CeO2中之至少1種金屬氧化物。 (a) SiO 2 : 50% by mass to 70% by mass, (b) Al 2 O 3 : 10% by mass to 25% by mass, (c) B 2 O 3 : 5% by mass to 18% by mass, (d) MgO :O% by mass% to 10% by mass, (e) CaO: 0% by mass to 20% by mass, (f) SrO: 0% by mass to 20% by mass, (g) BaO: 0% by mass to 10% by mass, (h) RO: 5 mass% to 20 mass% (R is at least one selected from the group consisting of Mg, Ca, Sr, and Ba), and (i) R' 2 O: 0% by mass to 2.0% by mass (R' is selected from At least one of Li, Na and K), (j) is at least one metal oxide selected from the group consisting of SnO 2 , Fe 2 O 3 and CeO 2 .

再者,具有上述組成之玻璃容許其他微量成分於未達0.1質量%之範圍內存在。 Further, the glass having the above composition allows other trace components to be present in the range of less than 0.1% by mass.

圖1係表示玻璃基板10之製造步驟之流程圖之一例。玻璃基板10之製造步驟主要包括:成形步驟(步驟S1)、板狀裁切步驟(步驟S2)、切斷步驟(步驟S3)、表面粗化步驟(步驟S4)、端面加工步驟(步驟S5)、清洗步驟(步驟S6)、檢查步驟(步驟S7)、及捆包步驟(步驟S8)。 FIG. 1 is a view showing an example of a flow chart of a manufacturing step of the glass substrate 10. The manufacturing steps of the glass substrate 10 mainly include a forming step (step S1), a plate-shaped cutting step (step S2), a cutting step (step S3), a surface roughening step (step S4), and an end surface processing step (step S5). And a washing step (step S6), an inspection step (step S7), and a packing step (step S8).

於成形步驟S1中,自加熱玻璃原料而獲得之熔融玻璃,藉由下拉法或浮式法,使玻璃片連續地成形。對於已成形之玻璃片,一面以不產生變形及翹曲之方式予以溫度控制,一面冷卻至玻璃徐冷點以 下。 In the forming step S1, the molten glass obtained by heating the glass raw material is continuously formed into a glass piece by a down-draw method or a floating method. For the formed glass piece, the temperature is controlled in such a manner that no deformation and warpage are caused, and the glass is cooled to the cold spot of the glass. under.

於板狀裁切步驟S2中,將於成形步驟S1中成形之玻璃片切斷,而獲得具有特定尺寸之素板玻璃。 In the plate-like cutting step S2, the glass piece formed in the forming step S1 is cut to obtain a plain glass having a specific size.

於切斷步驟S3中,將於板狀裁切步驟S2中獲得之素板玻璃切斷,而獲得製品尺寸之玻璃基板10。一般而言,素板玻璃係使用切割器或雷射而切斷。 In the cutting step S3, the plain plate glass obtained in the sheet-like cutting step S2 is cut to obtain the glass substrate 10 of the product size. In general, plain glass is cut using a cutter or a laser.

於表面粗化步驟S4中,進行使於切斷步驟S3中獲得之玻璃基板10之表面粗糙度增加之表面粗化處理。玻璃基板10之表面粗化處理例如係使用含有氟化氫之蝕刻劑之濕式蝕刻。 In the surface roughening step S4, surface roughening treatment for increasing the surface roughness of the glass substrate 10 obtained in the cutting step S3 is performed. The surface roughening treatment of the glass substrate 10 is, for example, wet etching using an etchant containing hydrogen fluoride.

於端面加工步驟S5中,進行已於表面粗化步驟S4中進行表面粗化處理之玻璃基板10之端面加工。端面加工例如係玻璃基板10之端面之倒角加工、及玻璃基板10之切角。 In the end surface processing step S5, the end surface processing of the glass substrate 10 subjected to the surface roughening treatment in the surface roughening step S4 is performed. The end face processing is, for example, chamfering of the end surface of the glass substrate 10 and chamfering of the glass substrate 10.

於清洗步驟S6中,清洗已於端面加工步驟S5中進行端面加工處理之玻璃基板10。於玻璃基板10中,附著有因素板玻璃之切斷、及玻璃基板10之端面加工而產生之微小之玻璃片、或存在於環境中之有機物等異物。藉由清洗玻璃基板10,去除該等異物。 In the cleaning step S6, the glass substrate 10 which has been subjected to the end surface processing in the end surface processing step S5 is cleaned. In the glass substrate 10, foreign matter such as the cutting of the factor plate glass, the minute glass piece produced by the end surface processing of the glass substrate 10, or the organic matter existing in the environment is adhered. These foreign matters are removed by cleaning the glass substrate 10.

於檢查步驟S7中,檢查已於清洗步驟S6中清洗之玻璃基板10。具體而言,測定玻璃基板10之形狀,並光學地檢測玻璃基板10之缺陷。玻璃基板10之缺陷例如係存在於玻璃基板10之表面之劃傷及裂縫、附著於玻璃基板10之表面之異物、及存在於玻璃基板10之內部之微小之氣泡等。 In the inspection step S7, the glass substrate 10 which has been cleaned in the cleaning step S6 is inspected. Specifically, the shape of the glass substrate 10 is measured, and the defects of the glass substrate 10 are optically detected. The defects of the glass substrate 10 are, for example, scratches and cracks on the surface of the glass substrate 10, foreign matter adhering to the surface of the glass substrate 10, and minute bubbles existing inside the glass substrate 10.

於捆包步驟S8中,將檢查步驟S7中之檢查合格之玻璃基板10與用於保護玻璃基板10之間隔紙交替地層疊於托板上而捆包。將已捆包之玻璃基板10向FPD(Flat Panel Display,平板顯示器)之製造業者等出貨。 In the packing step S8, the glass substrate 10 which has passed the inspection in the inspection step S7 and the spacer paper for protecting the glass substrate 10 are alternately laminated on the pallet and bundled. The bundled glass substrate 10 is shipped to a manufacturer of FPD (Flat Panel Display).

(2)玻璃基板端面加工裝置之構成 (2) Composition of the glass substrate end face processing device

圖2係玻璃基板端面加工裝置100之俯視圖。圖3係自圖2所示之箭頭III之方向觀察所得之玻璃基板端面加工裝置100之側視圖。玻璃基板端面加工裝置100係於端面加工步驟S5中,用於對水平狀態之玻璃基板10之端面進行倒角加工之裝置。玻璃基板端面加工裝置100主要包含:玻璃基板搬送裝置20;吸附平台30;一對倒角磨石40、42;一對第1感測器50、52;一對第2感測器60、62;一對移動機構70、72;磨削液供給裝置80;水供給裝置90;及控制裝置(未圖示)。 2 is a plan view of the glass substrate end surface processing apparatus 100. Fig. 3 is a side view of the glass substrate end surface processing apparatus 100 as seen from the direction of the arrow III shown in Fig. 2. The glass substrate end surface processing apparatus 100 is an apparatus for chamfering the end surface of the glass substrate 10 in the horizontal state in the end surface processing step S5. The glass substrate end surface processing apparatus 100 mainly includes: a glass substrate transfer device 20; an adsorption stage 30; a pair of chamfering grindstones 40, 42; a pair of first sensors 50, 52; and a pair of second sensors 60, 62 a pair of moving mechanisms 70, 72; a grinding fluid supply device 80; a water supply device 90; and a control device (not shown).

藉由玻璃基板端面加工裝置100加工之玻璃基板10具有長方形之形狀。玻璃基板10具有平行於其長邊之端面11、12,及平行於其短邊之端面13、14。 The glass substrate 10 processed by the glass substrate end surface processing apparatus 100 has a rectangular shape. The glass substrate 10 has end faces 11, 12 parallel to its long sides, and end faces 13, 14 parallel to its short sides.

如圖2所示,於與玻璃基板10之表面平行之平面上設定包含X軸及Y軸之二維正交座標系統。設定與含有X軸及Y軸之平面正交、且朝向鉛垂方向上之Z軸。X軸之朝向係自一對第1感測器50、52朝向一對第2感測器60、62之方向,Y軸之朝向係自第1感測器50朝向第1感測器52之方向。 As shown in FIG. 2, a two-dimensional orthogonal coordinate system including an X-axis and a Y-axis is set on a plane parallel to the surface of the glass substrate 10. The Z axis orthogonal to the plane including the X axis and the Y axis and oriented in the vertical direction is set. The X-axis orientation is from the pair of first sensors 50 and 52 toward the pair of second sensors 60 and 62, and the Y-axis is oriented from the first sensor 50 toward the first sensor 52. direction.

以下,對玻璃基板端面加工裝置100對玻璃基板10之平行於長邊之端面11、12進行倒角加工之步驟進行說明。然而,以下之說明亦可應用於玻璃基板端面加工裝置100對玻璃基板10之平行於短邊之端面13、14進行倒角加工之步驟。 Hereinafter, the step of chamfering the end faces 11 and 12 of the glass substrate 10 parallel to the long sides of the glass substrate end surface processing apparatus 100 will be described. However, the following description can also be applied to the step of chamfering the end faces 13, 14 of the glass substrate 10 parallel to the short sides of the glass substrate end face processing apparatus 100.

(2-1)玻璃基板搬送裝置 (2-1) Glass substrate conveying device

玻璃基板搬送裝置20係搬送玻璃基板10之機器人。玻璃基板搬送裝置20搬送玻璃基板10並將玻璃基板10載置於吸附平台30之上,或將載置於吸附平台30之上之玻璃基板10提昇而搬送玻璃基板10。 The glass substrate transfer device 20 is a robot that transports the glass substrate 10. The glass substrate transfer device 20 transports the glass substrate 10 and mounts the glass substrate 10 on the adsorption stage 30, or lifts the glass substrate 10 placed on the adsorption stage 30 to transport the glass substrate 10.

圖4係表示玻璃基板搬送裝置20將玻璃基板10載置於吸附平台30之上之狀態之圖。玻璃基板搬送裝置20包含具有複數個齒之梳齒狀機械手22。機械手22可吸附並保持玻璃基板10之下表面。玻璃基板搬送 裝置20可變更保持玻璃基板10之機械手22之位置,或使之於平行於水平面之面內旋轉。玻璃基板搬送裝置20係如圖4所示,可將機械手22之齒插入至吸附平台30之支持接腳32之間。 4 is a view showing a state in which the glass substrate transfer device 20 mounts the glass substrate 10 on the adsorption stage 30. The glass substrate transfer device 20 includes a comb-shaped robot 22 having a plurality of teeth. The robot 22 can adsorb and hold the lower surface of the glass substrate 10. Glass substrate transfer The device 20 can change the position of the robot 22 holding the glass substrate 10 or rotate it in a plane parallel to the horizontal plane. As shown in FIG. 4, the glass substrate transfer device 20 can insert the teeth of the robot 22 between the support pins 32 of the adsorption platform 30.

(2-2)吸附平台 (2-2) adsorption platform

吸附平台30係如圖4所示,具有複數個支持接腳32。支持接腳32係沿X軸方向及Y軸方向空出特定之間隔而安裝於吸附平台30之上表面。於吸附平台30之上表面形成有用於將載置於吸附平台30之上之玻璃基板10之下表面吸附之多個抽吸孔(未圖示)。吸附平台30藉由抽吸孔之吸引之吸附力,將載置之玻璃基板10固定。吸附平台30之上表面具有長方形之形狀。吸附平台30之上表面之長邊與X軸平行,吸附平台30之上表面之短邊與Y軸平行。吸附平台30之上表面之長邊及短邊之長度分別比玻璃基板10之表面之平行於X軸之邊、及平行於Y軸之邊之長度短5mm~8mm。 The adsorption platform 30 is shown in FIG. 4 and has a plurality of support pins 32. The support pins 32 are attached to the upper surface of the adsorption stage 30 at a specific interval in the X-axis direction and the Y-axis direction. A plurality of suction holes (not shown) for adsorbing the lower surface of the glass substrate 10 placed on the adsorption stage 30 are formed on the upper surface of the adsorption stage 30. The adsorption stage 30 fixes the placed glass substrate 10 by the suction force of the suction of the suction holes. The upper surface of the adsorption platform 30 has a rectangular shape. The long side of the upper surface of the adsorption platform 30 is parallel to the X axis, and the short side of the upper surface of the adsorption platform 30 is parallel to the Y axis. The lengths of the long sides and the short sides of the upper surface of the adsorption stage 30 are shorter than the sides of the glass substrate 10 parallel to the X-axis and the sides parallel to the Y-axis by 5 mm to 8 mm, respectively.

對玻璃基板搬送裝置20將玻璃基板10載置於吸附平台30之上之過程進行說明。首先,以機械手22之齒位於支持接腳32之間之方式,使保持玻璃基板10之機械手22下降。機械手22下降至支持接腳32與玻璃基板10之下表面相接之高度位置為止。其次,解除藉由機械手22之玻璃基板10之吸附。藉此,玻璃基板10成為僅由支持接腳32支持之狀態。其次,使機械手22水平地移動,而將機械手22自支持接腳32之間抽出。其次,使支持接腳32下降,而將玻璃基板10載置於吸附平台30之上。其次,藉由抽吸孔之吸引,將玻璃基板10固定於吸附平台30之上。 The process in which the glass substrate 10 is placed on the adsorption stage 30 by the glass substrate transfer apparatus 20 will be described. First, the robot 22 holding the glass substrate 10 is lowered in such a manner that the teeth of the robot 22 are positioned between the support pins 32. The robot 22 is lowered to a height position at which the support pin 32 is in contact with the lower surface of the glass substrate 10. Next, the adsorption by the glass substrate 10 of the robot 22 is released. Thereby, the glass substrate 10 is in a state of being supported only by the support pins 32. Next, the robot 22 is moved horizontally, and the robot 22 is pulled out between the support pins 32. Next, the support pins 32 are lowered, and the glass substrate 10 is placed on the adsorption stage 30. Next, the glass substrate 10 is fixed on the adsorption stage 30 by suction of the suction holes.

對玻璃基板搬送裝置20將載置於吸附平台30之上之玻璃基板10取出之過程進行說明。首先,解除抽吸孔之吸引,並使支持接腳32上升,而僅由支持接腳32支持玻璃基板10。其次,使機械手22於水平方向上移動,並插入至吸附平台30之支持接腳32之間。其次,開始藉由 機械手22之玻璃基板10之吸附,使機械手22上升,而將玻璃基板10提昇。其次,藉由機械手22之動作,將玻璃基板10搬送至後續步驟。 The process of taking out the glass substrate 10 placed on the adsorption stage 30 by the glass substrate transfer apparatus 20 will be described. First, the suction of the suction holes is released, and the support pins 32 are raised, and the glass substrate 10 is supported only by the support pins 32. Next, the robot 22 is moved in the horizontal direction and inserted between the support pins 32 of the adsorption platform 30. Second, start by The adsorption of the glass substrate 10 of the robot 22 causes the robot 22 to rise, and the glass substrate 10 is lifted. Next, the glass substrate 10 is transferred to the subsequent step by the action of the robot 22.

(2-3)倒角磨石 (2-3) chamfering grindstone

一對倒角磨石40、42分別為用於對玻璃基板10之端面11、12進行倒角之磨削輪。倒角磨石40、42分別安裝於移動機構70、72。 The pair of chamfering grindstones 40, 42 are grinding wheels for chamfering the end faces 11, 12 of the glass substrate 10, respectively. The chamfering grindstones 40, 42 are attached to the moving mechanisms 70, 72, respectively.

倒角磨石40、42可沿X軸方向、Y軸方向及Z軸方向移動。倒角磨石40、42之X軸方向及Y軸方向之位置分別藉由移動機構70、72調節。倒角磨石40、42之Z軸方向之位置可分別藉由設置於移動機構70、72之伺服致動器(未圖示)任意地調節。 The chamfering grindstones 40 and 42 are movable in the X-axis direction, the Y-axis direction, and the Z-axis direction. The positions of the chamfering grindstones 40 and 42 in the X-axis direction and the Y-axis direction are respectively adjusted by the moving mechanisms 70 and 72. The positions of the chamfering grindstones 40 and 42 in the Z-axis direction can be arbitrarily adjusted by servo actuators (not shown) provided in the moving mechanisms 70 and 72, respectively.

倒角磨石40、42例如為金剛石磨輪、及樹脂結合研磨輪。金剛石磨輪例如係以含鐵之金屬系結合劑將金剛石研磨粒凝固而成之磨削輪。金剛石研磨粒例如係粒度為#400之金剛石研磨粒。樹脂結合研磨輪例如係以具有柔軟性及彈性之樹脂系結合劑將通常所使用之研磨粒凝固而成之磨削輪。研磨粒之粒度例如係JIS R6001-1987所規定之#300~#500左右。 The chamfering grindstones 40, 42 are, for example, diamond grinding wheels and resin bonded grinding wheels. The diamond grinding wheel is, for example, a grinding wheel obtained by solidifying diamond abrasive grains with an iron-containing metal-based bonding agent. The diamond abrasive particles are, for example, diamond abrasive grains having a particle size of #400. The resin-bonded grinding wheel is, for example, a grinding wheel obtained by solidifying abrasive grains which are generally used, by a resin-based bonding agent having flexibility and elasticity. The particle size of the abrasive grains is, for example, about #300 to #500 as defined in JIS R6001-1987.

(2-4)第1感測器 (2-4) 1st sensor

一對第1感測器50、52分別係測定玻璃基板10之端面11、12之位置之感測器。以下,端面11、12之位置以位於端面11、12中之測定點之X軸方向之位置及Y軸方向之位置表示。第1感測器50、52分別安裝於移動機構70、72。 The pair of first sensors 50 and 52 are sensors for measuring the positions of the end faces 11 and 12 of the glass substrate 10, respectively. Hereinafter, the positions of the end faces 11 and 12 are indicated by the positions of the measurement points located in the end faces 11 and 12 in the X-axis direction and the positions in the Y-axis direction. The first sensors 50 and 52 are attached to the moving mechanisms 70 and 72, respectively.

第1感測器50、52可沿X軸方向、Y軸方向及Z軸方向移動。第1感測器50、52之X軸方向及Y軸方向之位置分別藉由移動機構70、72調節。第1感測器50、52之Z軸方向之位置可分別藉由設置於移動機構70、72之伺服致動器(未圖示)任意地調節。 The first sensors 50 and 52 are movable in the X-axis direction, the Y-axis direction, and the Z-axis direction. The positions of the first sensors 50 and 52 in the X-axis direction and the Y-axis direction are adjusted by the moving mechanisms 70 and 72, respectively. The positions of the first sensors 50 and 52 in the Z-axis direction can be arbitrarily adjusted by servo actuators (not shown) provided in the moving mechanisms 70 and 72, respectively.

第1感測器50、52係接觸型感測器。為了測定端面11、12之位置,首先,將第1感測器50、52之高度位置(即,Z軸方向之位置)調節 為玻璃基板10之端面11、12之高度位置。其次,以第1感測器50、52之前端部與玻璃基板10之端面11、12接觸之方式,調節第1感測器50、52之Y軸方向之位置。其次,測定與玻璃基板10之端面11接觸之第1感測器50、52之前端部之座標。「座標」包括X軸方向之位置及Y軸方向之位置。 The first sensors 50 and 52 are contact sensors. In order to measure the positions of the end faces 11, 12, first, the height positions of the first sensors 50, 52 (i.e., the positions in the Z-axis direction) are adjusted. It is the height position of the end faces 11, 12 of the glass substrate 10. Next, the positions of the first sensors 50 and 52 in the Y-axis direction are adjusted so that the front ends of the first sensors 50 and 52 are in contact with the end faces 11 and 12 of the glass substrate 10. Next, the coordinates of the front end portions of the first sensors 50 and 52 that are in contact with the end surface 11 of the glass substrate 10 are measured. The "coordinate" includes the position in the X-axis direction and the position in the Y-axis direction.

第1感測器50、52係如圖2所示,於玻璃基板10之端面11、12之一端部之附近,測定端面11、12之位置。另一方面,第2感測器60、62係如圖2所示,於玻璃基板10之端面11、12之另一端部之附近,測定端面11、12之位置。 As shown in FIG. 2, the first sensors 50 and 52 measure the positions of the end faces 11 and 12 in the vicinity of one end of the end faces 11 and 12 of the glass substrate 10. On the other hand, as shown in FIG. 2, the second sensors 60 and 62 measure the positions of the end faces 11 and 12 in the vicinity of the other end faces of the end faces 11 and 12 of the glass substrate 10.

(2-5)第2感測器 (2-5) 2nd sensor

一對第2感測器60、62分別係測定玻璃基板10之端面11、12之位置之感測器。第2感測器60、62可分別自移動機構70、72獨立而移動。第2感測器60、62係如圖3所示,安裝於設置於底板19上之氣缸64。再者,氣缸64亦可由安裝於吸附平台30之基部之支持部材支持。 The pair of second sensors 60 and 62 are sensors for measuring the positions of the end faces 11 and 12 of the glass substrate 10, respectively. The second sensors 60, 62 are independently movable from the moving mechanisms 70, 72, respectively. The second sensors 60 and 62 are attached to the air cylinder 64 provided on the bottom plate 19 as shown in FIG. Further, the cylinder 64 may also be supported by a support member attached to the base of the adsorption platform 30.

第2感測器60、62可於Y軸方向及Z軸方向上移動。第2感測器60、62之Y軸方向之位置係藉由連接於第2感測器60、62之伺服致動器(未圖示),於高速模式或低速模式下調節。第2感測器60、62之Z軸方向之位置係藉由氣缸64而調節。 The second sensors 60 and 62 are movable in the Y-axis direction and the Z-axis direction. The positions of the second sensors 60 and 62 in the Y-axis direction are adjusted in the high speed mode or the low speed mode by servo actuators (not shown) connected to the second sensors 60 and 62. The position of the second sensors 60, 62 in the Z-axis direction is adjusted by the air cylinder 64.

第2感測器60、62係接觸型感測器。為了測定端面11、12之位置,首先,將第2感測器60、62之高度位置調節為玻璃基板10之端面11、12之高度位置。其次,以第2感測器60、62之前端部與玻璃基板10之端面11、12接觸之方式,調整第2感測器60、62之Y軸方向之位置。其次,測定與玻璃基板10之端面11接觸之第2感測器60、62之前端部之座標。 The second sensors 60 and 62 are contact sensors. In order to measure the positions of the end faces 11, 12, first, the height positions of the second sensors 60, 62 are adjusted to the height positions of the end faces 11, 12 of the glass substrate 10. Next, the positions of the second sensors 60 and 62 in the Y-axis direction are adjusted so that the front ends of the second sensors 60 and 62 are in contact with the end faces 11 and 12 of the glass substrate 10. Next, the coordinates of the front end portions of the second sensors 60 and 62 which are in contact with the end surface 11 of the glass substrate 10 are measured.

(2-6)移動機構 (2-6) Mobile agency

一對移動機構70、72係可沿X軸方向及Y軸方向移動之單元。移 動機構70係安裝倒角磨石40及第1感測器50之單元。移動機構72係安裝倒角磨石42及第1感測器52之單元。於移動機構70中,第1感測器50之高度位置與倒角磨石40之高度位置不同。於移動機構72中,第1感測器52之高度位置與倒角磨石42之高度位置不同。 The pair of moving mechanisms 70 and 72 are units that are movable in the X-axis direction and the Y-axis direction. shift The moving mechanism 70 is a unit that mounts the chamfering grindstone 40 and the first sensor 50. The moving mechanism 72 is a unit that mounts the chamfering grindstone 42 and the first sensor 52. In the moving mechanism 70, the height position of the first sensor 50 is different from the height position of the chamfering grindstone 40. In the moving mechanism 72, the height position of the first sensor 52 is different from the height position of the chamfering grindstone 42.

移動機構70、72可分別藉由上述伺服致動器,獨立地調節倒角磨石40、42之Z軸方向之位置、及第1感測器50、52之Z軸方向之位置。移動機構70、72分別將第1感測器50、52相對於倒角磨石40、42之X軸方向及Y軸方向之相對位置固定。因此,倒角磨石40與第1感測器50之間之X軸方向及Y軸方向之距離、及倒角磨石42與第1感測器52之間之X軸方向及Y軸方向之距離不變,並被預先設定。 The moving mechanisms 70 and 72 can independently adjust the positions of the chamfering grindstones 40 and 42 in the Z-axis direction and the positions of the first sensors 50 and 52 in the Z-axis direction by the servo actuators, respectively. The moving mechanisms 70 and 72 fix the relative positions of the first sensors 50 and 52 with respect to the X-axis direction and the Y-axis direction of the chamfering grindstones 40 and 42, respectively. Therefore, the distance between the chamfer grindstone 40 and the first sensor 50 in the X-axis direction and the Y-axis direction, and the X-axis direction and the Y-axis direction between the chamfer grindstone 42 and the first sensor 52 The distance is constant and is preset.

(2-7)磨削液供給裝置 (2-7) Grinding fluid supply device

磨削液供給裝置80係如圖2所示,設置於玻璃基板10之側方、且於倒角磨石40、42之附近,並向玻璃基板10之端面11、12吹送磨削液之裝置。磨削液例如為水、添加有界面活性劑之水、添加有其他藥劑之水。再者,作為磨削液,不使用清洗步驟S6之後會有殘留於玻璃基板10之虞之液體、及會有促進基板端面加工裝置100之劣化之虞之液體。雖於圖2及圖3中未表示,但於玻璃基板10之上方設置有用於防止磨削液附著於玻璃基板10之表面之保護層。 As shown in FIG. 2, the grinding fluid supply device 80 is a device that is disposed on the side of the glass substrate 10 and that is in the vicinity of the chamfering grindstones 40 and 42 and that blows the grinding liquid toward the end faces 11 and 12 of the glass substrate 10. . The grinding liquid is, for example, water, water to which a surfactant is added, or water to which another pharmaceutical agent is added. Further, as the grinding liquid, a liquid remaining in the glass substrate 10 after the cleaning step S6 and a liquid which promotes deterioration of the substrate end surface processing apparatus 100 are not used. Although not shown in FIG. 2 and FIG. 3, a protective layer for preventing the grinding liquid from adhering to the surface of the glass substrate 10 is provided above the glass substrate 10.

磨削液由於表面張力較小,因此易於進入玻璃基板10之端面11、12與倒角磨石40、42之接觸部即磨削點。因此,磨削液具有將因玻璃基板10之磨削而產生之玻璃微粒子等異物沖洗之效果。又,磨削液具有將易於因摩擦而變成高溫之磨削點冷卻之效果。再者,於將清洗步驟S6中使用之界面活性劑作為磨削液使用之情形時,即便磨削液附著於玻璃基板10之表面而產生氣泡殘留,作為接觸式感測器之第1感測器50、52及第2感測器60、62亦可精度較佳地測定玻璃基板10之端面11、12之位置。 Since the grinding fluid has a small surface tension, it is easy to enter the contact point of the end faces 11, 12 of the glass substrate 10 and the chamfering grindstones 40 and 42, that is, the grinding point. Therefore, the grinding liquid has an effect of rinsing foreign matter such as glass fine particles generated by grinding of the glass substrate 10. Further, the grinding fluid has an effect of cooling the grinding point which is liable to become a high temperature by friction. In addition, when the surfactant used in the washing step S6 is used as the grinding liquid, even if the grinding liquid adheres to the surface of the glass substrate 10, air bubbles remain, and the first sensing is used as the contact sensor. The devices 50, 52 and the second sensors 60, 62 can also accurately measure the positions of the end faces 11, 12 of the glass substrate 10.

(2-8)水供給裝置 (2-8) Water supply device

水供給裝置90係如圖3所示,設置於玻璃基板10之上方,並向玻璃基板10之端面11、12吹送水之裝置。藉由利用倒角磨石40、42加工玻璃基板10之端面11、12,作為玻璃之微小片之玻璃屑自端面11、12飛散。水供給裝置90將水自玻璃基板10之表面之內側向端面11、12噴出,形成水膜。藉此,水供給裝置90可減少向玻璃基板10之表面之內側飛散之玻璃屑之量。因此,水供給裝置90可抑制附著於玻璃基板10之表面之玻璃屑之量。 As shown in FIG. 3, the water supply device 90 is provided above the glass substrate 10 and blows water to the end faces 11 and 12 of the glass substrate 10. By processing the end faces 11 and 12 of the glass substrate 10 by the chamfering grindstones 40 and 42, the glass flakes which are fine pieces of the glass are scattered from the end faces 11 and 12. The water supply device 90 ejects water from the inner side of the surface of the glass substrate 10 to the end faces 11 and 12 to form a water film. Thereby, the water supply device 90 can reduce the amount of glass swarf scattered to the inside of the surface of the glass substrate 10. Therefore, the water supply device 90 can suppress the amount of glass swarf attached to the surface of the glass substrate 10.

(2-9)控制裝置 (2-9) Control device

控制裝置例如係控制玻璃基板端面加工裝置100之動作之電腦。控制裝置個別地控制玻璃基板搬送裝置20,吸附平台30,一對倒角磨石40、42,一對第1感測器50、52,一對第2感測器60、62,一對移動機構70、72及磨削液供給裝置80之動作。其次,對玻璃基板端面加工裝置100藉由控制裝置對玻璃基板10之端面11、12進行倒角加工之步驟進行說明。 The control device is, for example, a computer that controls the operation of the glass substrate end face processing device 100. The control device individually controls the glass substrate transfer device 20, the adsorption stage 30, a pair of chamfering grindstones 40, 42, a pair of first sensors 50, 52, a pair of second sensors 60, 62, and a pair of movements The actions of the mechanisms 70, 72 and the grinding fluid supply device 80. Next, a procedure of chamfering the end faces 11 and 12 of the glass substrate 10 by the control device will be described with respect to the glass substrate end surface processing apparatus 100.

(3)玻璃基板端面加工裝置之動作 (3) Action of the glass substrate end face processing device

圖5係表示玻璃基板端面加工裝置100對玻璃基板10之端面11、12進行倒角加工之步驟之流程圖。圖6及圖7係表示玻璃基板10之端面11、倒角磨石40、第1感測器50及第2感測器60之位置關係之概略圖。以下,一面參照圖6及圖7,一面對第1感測器50及第2感測器60測定玻璃基板10之端面11之位置、及倒角磨石40對端面11進行倒角之一連串之步驟進行說明。以下之說明亦可應用於第1感測器52及第2感測器62測定玻璃基板10之端面12之位置、及倒角磨石42對端面12進行倒角之一連串之步驟。 5 is a flow chart showing the procedure of chamfering the end faces 11 and 12 of the glass substrate 10 by the glass substrate end surface processing apparatus 100. 6 and 7 are schematic views showing the positional relationship between the end surface 11 of the glass substrate 10, the chamfering grindstone 40, the first sensor 50, and the second sensor 60. Hereinafter, the position of the end surface 11 of the glass substrate 10 and the chamfering of the end surface 11 by the chamfering grindstone 40 are measured in the first sensor 50 and the second sensor 60 as described above with reference to FIGS. 6 and 7. The steps are explained. The following description can also be applied to the steps in which the first sensor 52 and the second sensor 62 measure the position of the end face 12 of the glass substrate 10 and the chamfering grindstone 42 chamfers the end face 12.

首先,於步驟S11中,玻璃基板搬送裝置20將玻璃基板10移送至吸附平台30之上。載置於吸附平台30之上之玻璃基板10係在不進行位 置調整之情況下,藉由形成於吸附平台30之上表面之多個抽吸孔之吸附力,固定於吸附平台30。 First, in step S11, the glass substrate transfer device 20 transfers the glass substrate 10 onto the adsorption stage 30. The glass substrate 10 placed on the adsorption platform 30 is not in position In the case of the adjustment, the adsorption platform 30 is fixed by the adsorption force of the plurality of suction holes formed on the upper surface of the adsorption platform 30.

其次,於步驟S12中,藉由第1感測器50及第2感測器60,測定玻璃基板10之端面11之位置。具體而言,首先,將第1感測器50及第2感測器60之高度位置(Z軸方向之位置)調節為玻璃基板10之高度位置,且以倒角磨石40不與玻璃基板10接觸之方式,將倒角磨石40之高度位置調節為較玻璃基板10為上方或下方之高度位置。其次,藉由使第1感測器50及第2感測器60與Y軸方向上移動並與端面11接觸,測定第1感測器50之前端部與端面11接觸之第1點P1之座標、及第2感測器60之前端部與端面11接觸之第2點P2之座標。 Next, in step S12, the positions of the end faces 11 of the glass substrate 10 are measured by the first sensor 50 and the second sensor 60. Specifically, first, the height position (position in the Z-axis direction) of the first sensor 50 and the second sensor 60 is adjusted to the height position of the glass substrate 10, and the chamfered grindstone 40 is not bonded to the glass substrate. In the manner of 10 contact, the height position of the chamfering grindstone 40 is adjusted to a height position above or below the glass substrate 10. Then, the first sensor 50 and the second sensor 60 are moved in the Y-axis direction and brought into contact with the end surface 11, and the first point P1 at which the front end portion of the first sensor 50 is in contact with the end surface 11 is measured. The coordinates and the coordinates of the second point P2 at which the front end of the second sensor 60 is in contact with the end surface 11.

其次,於步驟S13中,判斷步驟S12中測定之玻璃基板10是否為玻璃基板10之各製造批次之最初之玻璃基板10。於玻璃基板10為各製造批次之最初之玻璃基板10之情形時,前進至步驟S14。於玻璃基板10並非各製造批次之最初之玻璃基板10之情形時,前進至步驟S15。 Next, in step S13, it is determined whether or not the glass substrate 10 measured in step S12 is the first glass substrate 10 of each manufacturing lot of the glass substrate 10. When the glass substrate 10 is the first glass substrate 10 of each manufacturing lot, it progresses to step S14. When the glass substrate 10 is not the first glass substrate 10 of each manufacturing lot, it progresses to step S15.

其次,於步驟S14中,將第1感測器50之位置資訊與第2感測器60之位置資訊關聯。步驟S14係於玻璃基板10之各製造批次之開始時,僅進行1次之步驟。於步驟S14中,首先,將第2感測器60之高度位置降低,使第1感測器50於X軸方向上移動,並使第1感測器50移動至與第2感測器60之X軸方向之位置相同之位置。其次,使第1感測器50於Y軸方向上移動,並使第1感測器50移動至與第2感測器60之Y軸方向之位置相同之位置。於該狀態下,測定第1感測器50之前端部之座標,並將第1感測器50之位置資訊與第2感測器60之位置資訊關聯。此時,第1感測器50之座標、即X軸方向之位置及Y軸方向之位置與第2感測器60之座標相同。因此,以後即便使第1感測器50及第2感測器60移動,亦可始終取得第1感測器50與第2感測器60之間之相對位置、即距離。再者,不僅於步驟S14中在各製造批次之開始時進行第1感測器 50與第2感測器60之關聯,於對特定數量之玻璃基板10進行加工後之時間點、或自製造批次之開始經過特定時間後之時間點,亦可進行第1感測器50與第2感測器60之關聯。 Next, in step S14, the position information of the first sensor 50 is associated with the position information of the second sensor 60. Step S14 is a step in which only one step is performed at the start of each manufacturing lot of the glass substrate 10. In step S14, first, the height position of the second sensor 60 is lowered, the first sensor 50 is moved in the X-axis direction, and the first sensor 50 is moved to the second sensor 60. The position in the X-axis direction is the same. Next, the first sensor 50 is moved in the Y-axis direction, and the first sensor 50 is moved to the same position as the position of the second sensor 60 in the Y-axis direction. In this state, the coordinates of the front end portion of the first sensor 50 are measured, and the position information of the first sensor 50 is associated with the position information of the second sensor 60. At this time, the coordinates of the coordinates of the first sensor 50, that is, the position in the X-axis direction and the Y-axis direction are the same as the coordinates of the second sensor 60. Therefore, even if the first sensor 50 and the second sensor 60 are moved in the future, the relative position between the first sensor 50 and the second sensor 60, that is, the distance can be always obtained. Furthermore, not only the first sensor is performed at the beginning of each manufacturing lot in step S14. In association with the second sensor 60, the first sensor 50 may be performed at a time point after processing a specific number of glass substrates 10 or at a time point after a specific time has elapsed since the start of the manufacturing lot. Associated with the second sensor 60.

其次,於步驟S15中,算出加工修正值D,而算出為了以倒角磨石40對玻璃基板10之端面11進行倒角加工所需之加工開始位置及加工結束位置。加工修正值D係為了使倒角磨石40沿Y軸方向移動至加工開始位置所需之距離。 Next, in step S15, the machining correction value D is calculated, and the machining start position and the machining end position required for chamfering the end surface 11 of the glass substrate 10 by the chamfering grindstone 40 are calculated. The machining correction value D is a distance required to move the chamfering grindstone 40 in the Y-axis direction to the machining start position.

為了算出加工修正值D,首先,於含有X軸及Y軸之面內設定零基準線ZL。零基準線ZL係使倒角磨石40沿Y軸方向僅移動加工修正值D時之基準。零基準線ZL係如圖6及圖7所示,將位於倒角磨石40之外周之第3點P3與第1點P1連結之線。第3點P3係最接近倒角磨石40所加工之端面11之相反側之端面12之點。於圖6及圖7中,零基準線ZL平行於X軸,但亦可不平行於X軸。零基準線ZL之朝向係由安裝於移動機構70之倒角磨石40與第1感測器50之間之位置關係決定。 In order to calculate the machining correction value D, first, the zero reference line ZL is set in the plane including the X axis and the Y axis. The zero reference line ZL is a reference for moving the chamfering grindstone 40 only in the Y-axis direction by the machining correction value D. As shown in FIGS. 6 and 7, the zero reference line ZL connects the third point P3 on the outer circumference of the chamfer grindstone 40 to the first point P1. The third point P3 is the point closest to the end face 12 of the opposite side of the end face 11 machined by the chamfering grindstone 40. In FIGS. 6 and 7, the zero reference line ZL is parallel to the X axis, but may not be parallel to the X axis. The orientation of the zero reference line ZL is determined by the positional relationship between the chamfered grindstone 40 attached to the moving mechanism 70 and the first sensor 50.

為了算出加工修正值D,其次,求出圖6及圖7所示之第1距離L1、第2距離L2及第3距離L3。第1距離L1係第1感測器50與第2感測器60之間之X軸方向之距離。具體而言,第1距離L1係第1點P1與第2點P2之間之X軸方向之距離。第1距離L1係由於在步驟S14中第1感測器50之位置資訊已與第2感測器60之位置資訊關聯,因此可藉由計算容易地求出。第2距離L2係第1感測器50與倒角磨石40之間之X軸方向之距離。具體而言,第2距離L2係第1點P1與第3點P3之間之X軸方向之距離。由於在X軸方向及Y軸方向上,第1感測器50與倒角磨石40之間之距離固定,因此第2距離L2可預先獲得。第3距離L3係圖6及圖7所示之第4點P4與第2點P2之間之Y軸方向之距離。第4點P4係第2感測器60之X軸方向之位置上之零基準線ZL上的座標。第3距離L3係由於在步驟S14中第1感測器50之位置資訊已與第2感測器60之位置資訊關 聯,因此可藉由計算容易地求出。又,如圖6及圖7所示,對作為倒角磨石40之加工開始位置之第5點P5進行定義。第5點P5係位於端面11之延長線11a上,並具有與第3點P3之X軸方向之位置相同之X軸方向之位置的點。第5點P5可藉由計算容易地求出。 In order to calculate the machining correction value D, the first distance L1, the second distance L2, and the third distance L3 shown in FIGS. 6 and 7 are obtained. The first distance L1 is a distance between the first sensor 50 and the second sensor 60 in the X-axis direction. Specifically, the first distance L1 is a distance between the first point P1 and the second point P2 in the X-axis direction. Since the first distance L1 is related to the position information of the second sensor 60 in step S14, the position information of the first sensor L1 can be easily obtained by calculation. The second distance L2 is the distance between the first sensor 50 and the chamfering grindstone 40 in the X-axis direction. Specifically, the second distance L2 is a distance between the first point P1 and the third point P3 in the X-axis direction. Since the distance between the first sensor 50 and the chamfering grindstone 40 is fixed in the X-axis direction and the Y-axis direction, the second distance L2 can be obtained in advance. The third distance L3 is the distance between the fourth point P4 and the second point P2 shown in FIGS. 6 and 7 in the Y-axis direction. The fourth point P4 is a coordinate on the zero reference line ZL at the position of the second sensor 60 in the X-axis direction. The third distance L3 is because the position information of the first sensor 50 has been in contact with the position information of the second sensor 60 in step S14. Therefore, it can be easily obtained by calculation. Further, as shown in FIGS. 6 and 7, the fifth point P5 which is the machining start position of the chamfering grindstone 40 is defined. The fifth point P5 is located on the extension line 11a of the end surface 11, and has a point in the X-axis direction which is the same as the position of the third point P3 in the X-axis direction. The fifth point P5 can be easily obtained by calculation.

於圖6及圖7中,包含第1點P1、第2點P2及第4點P4之三角形T1與包含第1點P1、第3點P3及第5點P5之三角形T2互為相似。因此,藉由計算,可算出第3點P3與第5點P5之間之距離即加工修正值D。具體而言,加工修正值D係藉由對第2距離L2乘以第3距離L3所得之值除以第1距離L1而算出。再者,亦可於所算出之加工修正值D上進而添加倒角磨石40之磨削加工之磨削裕度。磨削裕度例如為數μm~100μm。 In FIGS. 6 and 7, the triangle T1 including the first point P1, the second point P2, and the fourth point P4 is similar to the triangle T2 including the first point P1, the third point P3, and the fifth point P5. Therefore, by calculation, the machining correction value D which is the distance between the third point P3 and the fifth point P5 can be calculated. Specifically, the machining correction value D is calculated by dividing the value obtained by multiplying the second distance L2 by the third distance L3 by the first distance L1. Further, the grinding allowance of the grinding process of the chamfering grindstone 40 may be further added to the calculated machining correction value D. The grinding allowance is, for example, several μm to 100 μm.

其次,於步驟S16中,基於步驟S15中算出之加工修正值D,修正倒角磨石40之位置。具體而言,首先,將倒角磨石40之高度位置調節為玻璃基板10之高度位置,同時以第1感測器50不與玻璃基板10接觸之方式,將第1感測器50之高度位置調節為較玻璃基板10為上方或下方之高度位置。又,以第2感測器60不與玻璃基板10接觸之方式,將第2感測器60之高度位置調節為較玻璃基板10為上方或下方之高度位置。其次,使倒角磨石40沿Y軸方向僅移動加工修正值D。藉此,倒角磨石40之第3點P3之位置成為作為端面11之加工開始位置之第5點P5。 Next, in step S16, the position of the chamfering grindstone 40 is corrected based on the machining correction value D calculated in step S15. Specifically, first, the height position of the chamfer grindstone 40 is adjusted to the height position of the glass substrate 10, and the height of the first sensor 50 is set so that the first sensor 50 does not contact the glass substrate 10. The position is adjusted to a height position above or below the glass substrate 10. Moreover, the height position of the second sensor 60 is adjusted to a height position above or below the glass substrate 10 so that the second sensor 60 does not contact the glass substrate 10. Next, the chamfering grindstone 40 is moved only by the machining correction value D in the Y-axis direction. Thereby, the position of the third point P3 of the chamfer grindstone 40 becomes the fifth point P5 which is the processing start position of the end surface 11.

其次,於步驟S17中,使倒角磨石40自作為加工開始位置之第5點P5移動至作為加工結束位置之第2點P2,而進行端面11之磨削加工。此時,向端面11與倒角磨石40之接觸部,藉由磨削液供給裝置80供給磨削液。 Next, in step S17, the chamfer grindstone 40 is moved from the fifth point P5 which is the machining start position to the second point P2 which is the machining end position, and the end surface 11 is ground. At this time, the grinding fluid is supplied to the contact portion between the end surface 11 and the chamfering grindstone 40 by the grinding fluid supply device 80.

再者,於以倒角磨石42對玻璃基板10之端面11之相反側之端面12進行倒角之一連串之步驟中算出之加工修正值係與於以倒角磨石40對端面11進行倒角之上述步驟中算出之加工修正值D僅符號不同,且絕 對值為相等之關係。 Further, the machining correction value calculated in the step of chamfering one end surface 12 of the opposite end surface 11 of the glass substrate 10 by the chamfering grindstone 42 is performed on the end surface 11 by the chamfering grindstone 40 The machining correction value D calculated in the above steps of the corner is only different in sign, and absolutely The relationship is equal.

(4)特徵 (4) Features

(4-1) (4-1)

本實施形態之玻璃基板端面加工裝置100係首先不進行位置調整而將玻璃基板10固定於吸附平台30上,其次測定玻璃基板10之端面11、12之位置,其次以倒角磨石40、42將端面11、12磨削並倒角加工。端面11、12之倒角加工係藉由向端面11、12與倒角磨石40、42之接觸部供給磨削液,於濕潤之環境下進行。測定端面11、12之位置之第1感測器50、52及第2感測器60、62係接觸式感測器。因此,即便磨削液附著於第1感測器50、52及第2感測器60、62,其檢測精度亦不會降低。 The glass substrate end surface processing apparatus 100 of the present embodiment first fixes the glass substrate 10 to the adsorption stage 30 without performing position adjustment, and secondly measures the positions of the end faces 11 and 12 of the glass substrate 10, and secondly chamfers the grindstones 40 and 42. The end faces 11, 12 are ground and chamfered. The chamfering of the end faces 11 and 12 is performed by supplying a grinding fluid to the contact portions of the end faces 11, 12 and the chamfering grindstones 40, 42 in a humid environment. The first sensors 50 and 52 and the second sensors 60 and 62 that measure the positions of the end faces 11 and 12 are contact sensors. Therefore, even if the grinding fluid adheres to the first sensors 50 and 52 and the second sensors 60 and 62, the detection accuracy does not decrease.

玻璃基板端面加工裝置100於在濕潤之環境下進行玻璃基板10之端面11、12之倒角加工時,可於同一吸附平台30上進行玻璃基板10之端面11、12之位置之測定、及玻璃基板10之端面11、12之加工。因此,玻璃基板端面加工裝置100可於較少之空間內,進行玻璃基板10之端面11、12之倒角。 When the glass substrate end surface processing apparatus 100 performs chamfering processing of the end faces 11 and 12 of the glass substrate 10 in a humid environment, the position of the end faces 11 and 12 of the glass substrate 10 and the glass can be measured on the same adsorption stage 30. Processing of the end faces 11, 12 of the substrate 10. Therefore, the glass substrate end surface processing apparatus 100 can perform chamfering of the end faces 11, 12 of the glass substrate 10 in a small space.

(4-2) (4-2)

本實施形態之玻璃基板端面加工裝置100使用第1感測器50、52及第2感測器60、62,預先算出玻璃基板10之端面11、12之加工開始位置及加工結束位置。此時,算出為了使倒角磨石40、42沿Y軸方向移動至加工開始位置所需之距離即加工修正值。並且,於端面11、12之加工前,藉由使倒角磨石40、42沿Y軸方向僅移動加工修正值,可將倒角磨石40、42設定於加工開始位置。藉此,玻璃基板端面加工裝置100藉由使倒角磨石40、42自加工開始位置移動至加工結束位置,可精度較佳地對玻璃基板10之端面11、12進行加工。 In the glass substrate end surface processing apparatus 100 of the present embodiment, the processing start position and the processing end position of the end faces 11 and 12 of the glass substrate 10 are calculated in advance using the first sensors 50 and 52 and the second sensors 60 and 62. At this time, the machining correction value which is the distance required to move the chamfering grindstones 40 and 42 to the machining start position in the Y-axis direction is calculated. Further, before the machining of the end faces 11, 12, the chamfering grindstones 40, 42 can be set to the machining start position by moving only the machining correction value in the Y-axis direction. As a result, the glass substrate end surface processing apparatus 100 can accurately process the end faces 11 and 12 of the glass substrate 10 by moving the chamfering grindstones 40 and 42 from the processing start position to the processing end position.

其次,一面參照圖6及圖7,一面對以下步驟進行具體說明:玻 璃基板端面加工裝置100藉由使倒角磨石40沿Y軸方向僅移動加工修正值D,將倒角磨石40之第3點P3設定於作為加工開始位置之第5點P5。 Secondly, referring to Figure 6 and Figure 7, the following steps are specifically described: The glass substrate end surface processing apparatus 100 sets the third point P3 of the chamfer grindstone 40 to the fifth point P5 which is the processing start position by moving the chamfering grindstone 40 only by the machining correction value D in the Y-axis direction.

圖6係表示玻璃基板10之端面11相對於零基準線ZL順時針地僅傾斜角度θ之例之圖。於該情形時,作為端面11之加工開始位置之第5點P5較位置修正前之倒角磨石40之第3點P3朝向Y軸之正方向僅相隔加工修正值D。因此,位置修正前之倒角磨石40由於無法與端面11接觸,因此無法對端面11進行倒角。然而,藉由使倒角磨石40之Y軸方向之位置朝向Y軸之正方向僅移動加工修正值D,倒角磨石40可接觸至作為加工開始位置之第5點P5。藉此,玻璃基板10之端面11可藉由倒角磨石40確實地研磨。 Fig. 6 is a view showing an example in which the end surface 11 of the glass substrate 10 is inclined only by an angle θ clockwise with respect to the zero reference line ZL. In this case, the fifth point P5 which is the machining start position of the end surface 11 is separated from the third point P3 of the chamfering grindstone 40 before the position correction by the machining correction value D in the positive direction of the Y-axis. Therefore, since the chamfering grindstone 40 before the position correction cannot be in contact with the end surface 11, the end surface 11 cannot be chamfered. However, by moving the machining correction value D by the position of the chamfering grindstone 40 in the Y-axis direction toward the positive direction of the Y-axis, the chamfering grindstone 40 can be brought into contact with the fifth point P5 as the machining start position. Thereby, the end surface 11 of the glass substrate 10 can be surely ground by the chamfering grindstone 40.

另一方面,圖7係表示玻璃基板10之端面11相對於零基準線ZL逆時針地僅傾斜角度θ之例之圖。於該情形時,作為端面11之加工開始位置之第5點P5較位置修正前之倒角磨石40之第3點P3朝向Y軸之負方向僅相隔加工修正值D。因此,位置修正前之倒角磨石40存在超出必要地磨削端面11,而使玻璃基板10破損之虞。然而,藉由使倒角磨石40之Y軸方向之位置向Y軸之負方向僅移動加工修正值D,倒角磨石40可接觸至作為加工開始位置之第5點P5。藉此,玻璃基板10之端面11可藉由倒角磨石40適當地研磨。 On the other hand, FIG. 7 is a view showing an example in which the end surface 11 of the glass substrate 10 is inclined by an angle θ counterclockwise with respect to the zero reference line ZL. In this case, the fifth point P5 as the machining start position of the end surface 11 is separated from the machining correction value D by the third point P3 of the chamfering grindstone 40 before the position correction in the negative direction of the Y-axis. Therefore, the chamfered grindstone 40 before the position correction has a flaw in which the glass substrate 10 is broken beyond the necessary grinding of the end face 11. However, by moving the position of the chamfering grindstone 40 in the Y-axis direction by only the machining correction value D in the negative direction of the Y-axis, the chamfering grindstone 40 can be brought into contact with the fifth point P5 as the machining start position. Thereby, the end surface 11 of the glass substrate 10 can be appropriately ground by the chamfering grindstone 40.

(4-3) (4-3)

於本實施形態之玻璃基板端面加工裝置100中,磨削玻璃基板10之端面11、12之倒角磨石40、42例如為金剛石磨輪、及樹脂結合研磨輪,尤佳為樹脂結合研磨輪。樹脂結合研磨輪係對於如端面加工步驟S5之玻璃基板10之半精加工尤其有效。 In the glass substrate end surface processing apparatus 100 of the present embodiment, the chamfering grindstones 40 and 42 for grinding the end faces 11 and 12 of the glass substrate 10 are, for example, a diamond grinding wheel and a resin bonded grinding wheel, and more preferably a resin bonded grinding wheel. The resin-bonded grinding wheel train is particularly effective for semi-finishing of the glass substrate 10 such as the end face processing step S5.

樹脂結合研磨輪可有效地去除玻璃基板10之脆性破壞層及加工變質層。並且,玻璃基板端面加工裝置100為了去除玻璃基板10之脆 性破壞層及加工變質層,並且使之不會重新生成,而正確地算出玻璃基板10之端面11、12之加工開始位置及加工結束位置,從而可抑制倒角磨石40、42之磨削量及磨削壓力。 The resin-bonded grinding wheel can effectively remove the brittle fracture layer and the work-affected layer of the glass substrate 10. Moreover, the glass substrate end surface processing apparatus 100 is for removing the brittleness of the glass substrate 10. The fracture layer and the affected layer are processed, and the machining start position and the machining end position of the end faces 11 and 12 of the glass substrate 10 are accurately calculated, so that the grinding of the chamfering grindstones 40 and 42 can be suppressed. Volume and grinding pressure.

(5)變化例 (5) Variations

以上,對本發明之玻璃基板之製造方法進行了說明,但本發明並不限定於上述實施形態,亦可於不脫離本發明之主旨之範圍內,施加各種改良及變更。 Although the method of producing the glass substrate of the present invention has been described above, the present invention is not limited to the above-described embodiments, and various modifications and changes can be made without departing from the spirit and scope of the invention.

於本實施形態中,倒角磨石40、42例如為金剛石磨輪、及樹脂結合研磨輪。然而,倒角磨石亦可為如圖8所示般具有如下構成之倒角磨石140:具有共用之旋轉軸150之金剛石磨輪140a及樹脂結合研磨輪140b沿旋轉軸方向連結之兩段構成。 In the present embodiment, the chamfering grindstones 40 and 42 are, for example, a diamond grinding wheel and a resin-bonded grinding wheel. However, the chamfering grindstone may have a chamfering grindstone 140 having a configuration in which the diamond grinding wheel 140a having the common rotating shaft 150 and the resin-bonding grinding wheel 140b are coupled in the direction of the rotation axis. .

於本變化例中,倒角磨石140進行玻璃基板10之端面11、12之磨削加工之端面加工步驟包括:第1磨削步驟,其係使用以第1結合劑將研磨粒凝固而成之第1磨削輪磨削玻璃基板10之端面11、12;第2磨削步驟,其係於第1磨削步驟之後,使用以硬度及剛性低於第1結合材之第2結合劑將研磨粒凝固而成之第2磨削輪磨削玻璃基板10之端面11、12。再者,玻璃基板10之端面11、12係以JIS B 0601-1994所規定之算術平均粗糙度Ra成為未達0.2μm、較佳為未達0.1μm之方式,進行端面加工。 In the present modification, the end surface processing step of the chamfering grindstone 140 for grinding the end faces 11 and 12 of the glass substrate 10 includes a first grinding step of solidifying the abrasive grains with the first binder. The first grinding wheel grinds the end faces 11 and 12 of the glass substrate 10; and the second grinding step is performed after the first grinding step, using a second binder having a hardness and rigidity lower than that of the first bonding material. The second grinding wheel formed by solidifying the abrasive grains grinds the end faces 11 and 12 of the glass substrate 10. In addition, the end faces 11 and 12 of the glass substrate 10 are subjected to end surface processing so that the arithmetic mean roughness Ra defined by JIS B 0601-1994 is less than 0.2 μm, preferably less than 0.1 μm.

於藉由圖8所示之兩段構成之倒角磨石140之端面加工步驟中,首先,進行使用金剛石磨輪140a自一端向另一端對玻璃基板10之端面11、12進行加工之第1磨削步驟,其次,進行變更倒角磨石140之高度位置,並使用樹脂結合研磨輪140b自另一端向一端對玻璃基板10之端面11、12進行加工之第2磨削步驟。 In the end surface processing step of the chamfering grindstone 140 which is constituted by the two stages shown in FIG. 8, first, the first grinding of the end faces 11, 12 of the glass substrate 10 from one end to the other end using the diamond grinding wheel 140a is performed. The cutting step is followed by a second grinding step of changing the height position of the chamfering grindstone 140 and processing the end faces 11 and 12 of the glass substrate 10 from the other end toward the one end using the resin-bonding grinding wheel 140b.

於本變化例中,根據所算出之加工修正值D,可於藉由金剛石磨輪140a之玻璃基板10之端面11、12之加工步驟中,使因加工而產生之 對端面11、12之負荷變小,並減少加工變質層之形成。又,根據基於加工修正值D算出之被加工之玻璃基板10之端面11、12之位置資訊,可使用樹脂結合研磨輪140b,進而進行玻璃基板10之端面11、12之加工。 In the present modification, the calculated machining correction value D can be generated by machining in the processing steps of the end faces 11 and 12 of the glass substrate 10 of the diamond grinding wheel 140a. The load on the end faces 11, 12 becomes small, and the formation of the work-affected layer is reduced. Further, based on the positional information of the end faces 11 and 12 of the glass substrate 10 to be processed, which is calculated based on the machining correction value D, the resin can be joined to the end faces 11 and 12 of the glass substrate 10 by using the resin-bonding grinding wheel 140b.

於本變化例中,可使玻璃基板10之端面11、12之形狀加工後的加工變質層之深度之偏差變小。即,藉由預先算出因金剛石磨輪140a而形成之加工變質層之深度,可根據應去除之加工變質層之深度,決定樹脂結合研磨輪140b之加工線。因此,藉由使用兩段構成之倒角磨石140,可以最小限度之加工量,將因形狀加工而產生之加工變質層去除。 In the present modification, the variation in the depth of the work-affected layer after the shape of the end faces 11 and 12 of the glass substrate 10 can be reduced. That is, by calculating the depth of the work-affected layer formed by the diamond grinding wheel 140a in advance, the processing line of the resin-bonding grinding wheel 140b can be determined according to the depth of the work-affected layer to be removed. Therefore, by using the chamfered grindstone 140 composed of two stages, the work-affected layer generated by the shape processing can be removed with a minimum amount of processing.

10‧‧‧玻璃基板 10‧‧‧ glass substrate

11‧‧‧端面 11‧‧‧ end face

12‧‧‧端面 12‧‧‧ end face

13‧‧‧端面 13‧‧‧ end face

14‧‧‧端面 14‧‧‧ end face

30‧‧‧吸附平台(平台) 30‧‧‧Adsorption platform (platform)

40、42‧‧‧倒角磨石 40, 42‧‧‧Chamfering grindstone

50、52‧‧‧第1感測器 50, 52‧‧‧1st sensor

60、62‧‧‧第2感測器 60, 62‧‧‧2nd sensor

70‧‧‧移動機構 70‧‧‧Mobile agencies

72‧‧‧移動機構 72‧‧‧Mobile agencies

80‧‧‧磨削液供給裝置 80‧‧‧grinding fluid supply device

100‧‧‧玻璃基板端面加工裝置 100‧‧‧Glass substrate end face processing device

Claims (7)

一種玻璃基板之製造方法,其包括:基板固定步驟,其係將載置於平台之玻璃基板固定於上述平台;位置資訊取得步驟,其係取得固定於上述平台之上述玻璃基板之端面之位置資訊;加工位置算出步驟,其係基於上述位置資訊,算出用於將上述端面進行倒角加工之倒角磨石之加工開始位置及加工結束位置;及端面加工步驟,其係藉由向上述倒角磨石與上述端面之接觸部供給磨削液,並使上述倒角磨石自上述加工開始位置向上述加工結束位置移動,而將上述端面進行倒角加工;且上述倒角磨石以其至上述端面為止之距離可變更之方式可沿第1軸移動,且以與上述端面相對向之方式可沿與上述第1軸正交之第2軸移動;於上述位置資訊取得步驟中,藉由連結於上述倒角磨石且可與上述倒角磨石一併移動之第1感測器、及可沿上述第1軸移動之第2感測器,取得上述端面之複數個點之上述位置資訊;於上述加工位置算出步驟中,算出為了使上述倒角磨石沿上述第1軸移動至上述加工開始位置所需之距離即加工修正值。 A method for manufacturing a glass substrate, comprising: a substrate fixing step of fixing a glass substrate placed on the platform to the platform; and a position information obtaining step of obtaining position information of an end surface of the glass substrate fixed to the platform a machining position calculation step of calculating a machining start position and a machining end position of the chamfering grindstone for chamfering the end surface based on the position information; and an end surface machining step by chamfering a grinding fluid is supplied to the contact portion between the grindstone and the end surface, and the chamfering grindstone is moved from the processing start position to the processing end position, and the end surface is chamfered; and the chamfering grindstone is The distance between the end faces can be changed along the first axis, and can be moved along the second axis orthogonal to the first axis so as to face the end face; in the position information obtaining step, a first sensor connected to the chamfering grindstone and movable together with the chamfering grindstone, and a second sensor movable along the first axis Said plurality of points the position information of the end faces; in the work position calculating step, calculating the desired order so that the chamfering grindstone to the machining start position along the first axis of movement that is processed from the correction value. 如請求項1之玻璃基板之製造方法,其中於上述位置資訊取得步驟中,在取得上述位置資訊之前,使上述第1感測器沿上述第2軸移動至與上述第2感測器於上述第2軸方向上相同之位置,進而,使用上述第1感測器取得上述第1軸方向上之上述第2感測器之位置,藉此將藉由上述第1感測器 取得之上述第1軸方向之上述位置資訊與藉由上述第2感測器取得之上述第1軸方向之上述位置資訊關聯。 The method of manufacturing a glass substrate according to claim 1, wherein in the position information obtaining step, the first sensor is moved along the second axis to the second sensor before the position information is acquired. Positions in the second axis direction are the same, and the first sensor is used to obtain the position of the second sensor in the first axis direction, thereby using the first sensor The position information in the first axial direction obtained is associated with the position information in the first axial direction obtained by the second sensor. 如請求項1之玻璃基板之製造方法,其中於上述加工位置算出步驟中,基於上述第1感測器與上述第2感測器之間之上述第2軸方向之距離即第1距離、上述第1感測器與上述倒角磨石之間之上述第2軸方向之距離即第2距離、及藉由上述第2感測器測定之、預先設定之上述端面之基準位置與上述端面之位置之間之上述第1軸方向的距離即第3距離,算出上述加工修正值。 The method of manufacturing a glass substrate according to claim 1, wherein in the processing position calculating step, a distance between the first sensor and the second sensor in the second axial direction, that is, a first distance, and the a distance between the first sensor and the chamfering grindstone in the second axial direction, that is, a second distance, and a predetermined reference position of the end surface measured by the second sensor and the end surface The processing correction value is calculated as the third distance which is the distance between the positions in the first axial direction. 如請求項2之玻璃基板之製造方法,其中於上述加工位置算出步驟中,基於上述第1感測器與上述第2感測器之間之上述第2軸方向之距離即第1距離、上述第1感測器與上述倒角磨石之間之上述第2軸方向之距離即第2距離、及藉由上述第2感測器測定之、預先設定之上述端面之基準位置與上述端面之位置之間之上述第1軸方向的距離即第3距離,算出上述加工修正值。 The method of manufacturing a glass substrate according to claim 2, wherein in the processing position calculating step, a distance between the first sensor and the second sensor in the second axial direction, that is, a first distance, and the a distance between the first sensor and the chamfering grindstone in the second axial direction, that is, a second distance, and a predetermined reference position of the end surface measured by the second sensor and the end surface The processing correction value is calculated as the third distance which is the distance between the positions in the first axial direction. 如請求項3之玻璃基板之製造方法,其中於上述加工位置算出步驟中,上述加工修正值係藉由對上述第2距離乘以上述第3距離所得之值除以上述第1距離而算出。 The method of manufacturing a glass substrate according to claim 3, wherein in the processing position calculating step, the processing correction value is calculated by dividing a value obtained by multiplying the second distance by the third distance by the first distance. 如請求項4之玻璃基板之製造方法,其中於上述加工位置算出步驟中,上述加工修正值係藉由對上述第2距離乘以上述第3距離所得之值除以上述第1距離而算出。 The method of manufacturing a glass substrate according to claim 4, wherein in the processing position calculating step, the processing correction value is calculated by dividing a value obtained by multiplying the second distance by the third distance by the first distance. 如請求項1至6中任一項之玻璃基板之製造方法,其中上述第1感測器設置於與上述倒角磨石之高度位置不同之高度位置,且可與上述倒角磨石一併於鉛垂方向上移動;於上述位置資訊取得步驟中,以上述第1感測器之高度位置成 為與上述端面之高度位置相同之方式,調整上述第1感測器之高度位置;且於上述端面加工步驟中,以上述倒角磨石之高度位置成為與上述端面之高度位置相同之方式,調整上述倒角磨石之高度位置。 The method of manufacturing a glass substrate according to any one of claims 1 to 6, wherein the first sensor is disposed at a height position different from a height position of the chamfering grindstone, and is combinable with the chamfering grindstone Moving in the vertical direction; in the position information obtaining step, the height position of the first sensor is Adjusting the height position of the first sensor in the same manner as the height position of the end surface; and in the end surface processing step, the height position of the chamfered grindstone is the same as the height position of the end surface. Adjust the height position of the chamfer grindstone above.
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