TWI585815B - Plasma processing device - Google Patents

Plasma processing device Download PDF

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Publication number
TWI585815B
TWI585815B TW104105046A TW104105046A TWI585815B TW I585815 B TWI585815 B TW I585815B TW 104105046 A TW104105046 A TW 104105046A TW 104105046 A TW104105046 A TW 104105046A TW I585815 B TWI585815 B TW I585815B
Authority
TW
Taiwan
Prior art keywords
frequency power
waveform
frequency bias
plasma
current
Prior art date
Application number
TW104105046A
Other languages
English (en)
Chinese (zh)
Other versions
TW201537612A (zh
Inventor
豊田晃士
山本浩一
安井尚輝
Original Assignee
日立全球先端科技股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日立全球先端科技股份有限公司 filed Critical 日立全球先端科技股份有限公司
Publication of TW201537612A publication Critical patent/TW201537612A/zh
Application granted granted Critical
Publication of TWI585815B publication Critical patent/TWI585815B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
TW104105046A 2014-03-25 2015-02-13 Plasma processing device TWI585815B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014061124A JP6295119B2 (ja) 2014-03-25 2014-03-25 プラズマ処理装置

Publications (2)

Publication Number Publication Date
TW201537612A TW201537612A (zh) 2015-10-01
TWI585815B true TWI585815B (zh) 2017-06-01

Family

ID=54191375

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104105046A TWI585815B (zh) 2014-03-25 2015-02-13 Plasma processing device

Country Status (4)

Country Link
US (1) US10037868B2 (https=)
JP (1) JP6295119B2 (https=)
KR (1) KR101769073B1 (https=)
TW (1) TWI585815B (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6315809B2 (ja) 2014-08-28 2018-04-25 東京エレクトロン株式会社 エッチング方法
JP6491888B2 (ja) * 2015-01-19 2019-03-27 株式会社日立ハイテクノロジーズ プラズマ処理方法およびプラズマ処理装置
US9754769B2 (en) * 2015-09-15 2017-09-05 Lam Research Corporation Metrology methods to detect plasma in wafer cavity and use of the metrology for station-to-station and tool-to-tool matching
JP6523989B2 (ja) * 2016-02-19 2019-06-05 株式会社日立ハイテクノロジーズ プラズマ処理方法及びプラズマ処理装置
US12505986B2 (en) * 2017-11-17 2025-12-23 Advanced Energy Industries, Inc. Synchronization of plasma processing components
JP6846387B2 (ja) * 2018-06-22 2021-03-24 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP7175239B2 (ja) * 2018-06-22 2022-11-18 東京エレクトロン株式会社 制御方法、プラズマ処理装置、プログラム及び記憶媒体
JP7451540B2 (ja) * 2019-01-22 2024-03-18 アプライド マテリアルズ インコーポレイテッド パルス状電圧波形を制御するためのフィードバックループ
JP2020181650A (ja) * 2019-04-23 2020-11-05 東京エレクトロン株式会社 補正関数を決定する方法
CN113272939B (zh) * 2019-12-17 2023-11-14 株式会社日立高新技术 等离子体处理装置以及等离子体处理装置的工作方法
JP7437981B2 (ja) * 2020-03-06 2024-02-26 東京エレクトロン株式会社 プラズマ処理装置
JP7291091B2 (ja) * 2020-03-16 2023-06-14 株式会社京三製作所 高周波電源装置及びその出力制御方法
CN111370286B (zh) * 2020-03-24 2023-02-07 中国科学院近代物理研究所 一种用于治疗装备的等离子体源及其使用方法
KR102437091B1 (ko) * 2020-08-14 2022-08-26 한국기계연구원 플라즈마 화학기상증착 공정의 실시간 제어 방법 및 플라즈마 화학기상증착용 반응 챔버
WO2022093551A1 (en) * 2020-10-26 2022-05-05 Lam Research Corporation Synchronization of rf pulsing schemes and of sensor data collection
KR102864016B1 (ko) * 2020-11-25 2025-09-23 어플라이드 머티어리얼스, 인코포레이티드 펄스형 pvd 전력을 위한 파형 형상 팩터
TW202336803A (zh) * 2021-11-19 2023-09-16 日商東京威力科創股份有限公司 電漿處理裝置、控制方法、電源系統、程式及記憶媒體
US12131884B2 (en) * 2022-01-12 2024-10-29 Mks Instruments, Inc. Pulse and bias synchronization methods and systems
US12567572B2 (en) 2023-07-11 2026-03-03 Advanced Energy Industries, Inc. Plasma behaviors predicted by current measurements during asymmetric bias waveform application

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200601437A (en) * 2004-06-02 2006-01-01 Varian Semiconductor Equipment Monitoring plasma ion implantation systems for fault detection and process control
US20090294414A1 (en) * 2008-05-29 2009-12-03 Applied Materials, Inc. Method of plasma load impedance tuning for engineered transients by synchronized modulation of a source power or bias power rf gererator
TW201118943A (en) * 2009-03-31 2011-06-01 Tokyo Electron Ltd Plasma processing apparatus and plasma processing method
CN102612738A (zh) * 2009-11-19 2012-07-25 朗姆研究公司 用于检测等离子体处理系统中等离子体约束状态的方法及装置
TW201344781A (zh) * 2011-12-15 2013-11-01 Tokyo Electron Ltd 電漿處理裝置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3565774B2 (ja) 2000-09-12 2004-09-15 株式会社日立製作所 プラズマ処理装置及び処理方法
US7750645B2 (en) * 2007-08-15 2010-07-06 Applied Materials, Inc. Method of wafer level transient sensing, threshold comparison and arc flag generation/deactivation
JP2009064814A (ja) * 2007-09-04 2009-03-26 Hitachi High-Technologies Corp プラズマ処理装置
US8337661B2 (en) * 2008-05-29 2012-12-25 Applied Materials, Inc. Plasma reactor with plasma load impedance tuning for engineered transients by synchronized modulation of an unmatched low power RF generator
JP2012060104A (ja) 2010-08-11 2012-03-22 Toshiba Corp 電源制御装置、プラズマ処理装置、及びプラズマ処理方法
JP5808012B2 (ja) * 2011-12-27 2015-11-10 東京エレクトロン株式会社 プラズマ処理装置
JP5921964B2 (ja) * 2012-06-11 2016-05-24 東京エレクトロン株式会社 プラズマ処理装置及びプローブ装置
JP5822795B2 (ja) 2012-07-17 2015-11-24 株式会社日立ハイテクノロジーズ プラズマ処理装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200601437A (en) * 2004-06-02 2006-01-01 Varian Semiconductor Equipment Monitoring plasma ion implantation systems for fault detection and process control
US20090294414A1 (en) * 2008-05-29 2009-12-03 Applied Materials, Inc. Method of plasma load impedance tuning for engineered transients by synchronized modulation of a source power or bias power rf gererator
TW201118943A (en) * 2009-03-31 2011-06-01 Tokyo Electron Ltd Plasma processing apparatus and plasma processing method
CN102612738A (zh) * 2009-11-19 2012-07-25 朗姆研究公司 用于检测等离子体处理系统中等离子体约束状态的方法及装置
TW201344781A (zh) * 2011-12-15 2013-11-01 Tokyo Electron Ltd 電漿處理裝置

Also Published As

Publication number Publication date
US20150279624A1 (en) 2015-10-01
JP2015185698A (ja) 2015-10-22
US10037868B2 (en) 2018-07-31
KR20150111275A (ko) 2015-10-05
JP6295119B2 (ja) 2018-03-14
TW201537612A (zh) 2015-10-01
KR101769073B1 (ko) 2017-08-17

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