TWI583833B - Gas - phase growth device and gas - phase growth method - Google Patents
Gas - phase growth device and gas - phase growth method Download PDFInfo
- Publication number
- TWI583833B TWI583833B TW103120029A TW103120029A TWI583833B TW I583833 B TWI583833 B TW I583833B TW 103120029 A TW103120029 A TW 103120029A TW 103120029 A TW103120029 A TW 103120029A TW I583833 B TWI583833 B TW I583833B
- Authority
- TW
- Taiwan
- Prior art keywords
- gas
- supply path
- reaction chamber
- process gas
- phase growth
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 202
- 239000007789 gas Substances 0.000 claims description 668
- 230000008569 process Effects 0.000 claims description 172
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 85
- 238000000926 separation method Methods 0.000 claims description 78
- 239000012159 carrier gas Substances 0.000 claims description 70
- 238000001947 vapour-phase growth Methods 0.000 claims description 58
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 55
- 239000001257 hydrogen Substances 0.000 claims description 53
- 229910052739 hydrogen Inorganic materials 0.000 claims description 53
- 239000004065 semiconductor Substances 0.000 claims description 49
- 239000011261 inert gas Substances 0.000 claims description 38
- 229910021529 ammonia Inorganic materials 0.000 claims description 35
- 239000000758 substrate Substances 0.000 claims description 35
- 229910052751 metal Inorganic materials 0.000 claims description 25
- 239000002184 metal Substances 0.000 claims description 25
- 235000012431 wafers Nutrition 0.000 description 48
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 31
- 230000015572 biosynthetic process Effects 0.000 description 16
- 238000010438 heat treatment Methods 0.000 description 15
- 229910002601 GaN Inorganic materials 0.000 description 13
- 238000003860 storage Methods 0.000 description 12
- 150000002431 hydrogen Chemical class 0.000 description 11
- 229910052757 nitrogen Inorganic materials 0.000 description 10
- 125000002524 organometallic group Chemical group 0.000 description 10
- 229910001873 dinitrogen Inorganic materials 0.000 description 8
- 230000005484 gravity Effects 0.000 description 8
- 239000013078 crystal Substances 0.000 description 7
- 229910021478 group 5 element Inorganic materials 0.000 description 7
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 7
- 230000007613 environmental effect Effects 0.000 description 6
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 6
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 5
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000012071 phase Substances 0.000 description 4
- 238000009826 distribution Methods 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000037361 pathway Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 229910001256 stainless steel alloy Inorganic materials 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- -1 that is Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/16—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/16—Controlling or regulating
- C30B25/165—Controlling or regulating the flow of the reactive gases
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013142617A JP6180208B2 (ja) | 2013-07-08 | 2013-07-08 | 気相成長装置および気相成長方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201512470A TW201512470A (zh) | 2015-04-01 |
| TWI583833B true TWI583833B (zh) | 2017-05-21 |
Family
ID=52276075
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW103120029A TWI583833B (zh) | 2013-07-08 | 2014-06-10 | Gas - phase growth device and gas - phase growth method |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20150013594A1 (enrdf_load_stackoverflow) |
| JP (1) | JP6180208B2 (enrdf_load_stackoverflow) |
| KR (1) | KR101640918B1 (enrdf_load_stackoverflow) |
| TW (1) | TWI583833B (enrdf_load_stackoverflow) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6199619B2 (ja) * | 2013-06-13 | 2017-09-20 | 株式会社ニューフレアテクノロジー | 気相成長装置 |
| JP6153401B2 (ja) * | 2013-07-02 | 2017-06-28 | 株式会社ニューフレアテクノロジー | 気相成長装置および気相成長方法 |
| KR102215965B1 (ko) * | 2014-04-11 | 2021-02-18 | 주성엔지니어링(주) | 가스 분사 장치 및 이를 포함하는 기판 처리 장치 |
| JP6386901B2 (ja) * | 2014-12-17 | 2018-09-05 | 株式会社ニューフレアテクノロジー | 気相成長装置及び気相成長方法 |
| US10438795B2 (en) | 2015-06-22 | 2019-10-08 | Veeco Instruments, Inc. | Self-centering wafer carrier system for chemical vapor deposition |
| JP2018522401A (ja) * | 2015-06-22 | 2018-08-09 | ビーコ インストゥルメンツ インコーポレイテッド | 化学蒸着のための自己心合ウエハキャリアシステム |
| USD819580S1 (en) | 2016-04-01 | 2018-06-05 | Veeco Instruments, Inc. | Self-centering wafer carrier for chemical vapor deposition |
| USD810705S1 (en) | 2016-04-01 | 2018-02-20 | Veeco Instruments Inc. | Self-centering wafer carrier for chemical vapor deposition |
| JP6608332B2 (ja) * | 2016-05-23 | 2019-11-20 | 東京エレクトロン株式会社 | 成膜装置 |
| JP6786307B2 (ja) * | 2016-08-29 | 2020-11-18 | 株式会社ニューフレアテクノロジー | 気相成長方法 |
| KR102362032B1 (ko) | 2017-03-16 | 2022-02-14 | 삼성전자주식회사 | 기판 처리 장치 |
| CN113130324B (zh) * | 2021-03-29 | 2024-03-08 | 上海华力集成电路制造有限公司 | 嵌入式SiP外延层的制造方法 |
| CN116288694B (zh) * | 2023-04-03 | 2025-07-29 | 季华恒一(佛山)半导体科技有限公司 | 一种外延炉供气结构及供气系统 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201016884A (en) * | 2008-07-18 | 2010-05-01 | Toshiba Kk | Vapor growth apparatus, vapor growth method, and method for manufacturing semiconductor device |
| TW201317385A (zh) * | 2011-10-27 | 2013-05-01 | Sharp Kk | 氣相成長裝置 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3985977B2 (ja) * | 1997-05-23 | 2007-10-03 | シャープ株式会社 | 化合物半導体の気相成長方法 |
| KR20060020194A (ko) * | 2004-08-31 | 2006-03-06 | 삼성전자주식회사 | Ａｌｄ 박막 증착 장치 및 그를 이용한 증착 방법 |
| JP5045000B2 (ja) * | 2006-06-20 | 2012-10-10 | 東京エレクトロン株式会社 | 成膜装置、ガス供給装置、成膜方法及び記憶媒体 |
| KR100849929B1 (ko) * | 2006-09-16 | 2008-08-26 | 주식회사 피에조닉스 | 반응 기체의 분사 속도를 적극적으로 조절하는 샤워헤드를구비한 화학기상 증착 방법 및 장치 |
| JP4879693B2 (ja) * | 2006-10-02 | 2012-02-22 | シャープ株式会社 | Ｍｏｃｖｄ装置およびｍｏｃｖｄ法 |
| JP2008244014A (ja) * | 2007-03-26 | 2008-10-09 | Toshiba Corp | 基板処理装置、基板処理方法及び半導体装置の製造方法 |
| JP5353113B2 (ja) * | 2008-01-29 | 2013-11-27 | 豊田合成株式会社 | Ｉｉｉ族窒化物系化合物半導体の製造方法 |
| JP2010269970A (ja) * | 2009-05-21 | 2010-12-02 | Hitachi Cable Ltd | 窒化物半導体基板 |
| US9303319B2 (en) * | 2010-12-17 | 2016-04-05 | Veeco Instruments Inc. | Gas injection system for chemical vapor deposition using sequenced valves |
| JP5481416B2 (ja) * | 2011-03-09 | 2014-04-23 | 株式会社東芝 | 気相成長装置、及び気相成長方法 |
| JP6038618B2 (ja) * | 2011-12-15 | 2016-12-07 | 株式会社ニューフレアテクノロジー | 成膜装置および成膜方法 |
-
2013
- 2013-07-08 JP JP2013142617A patent/JP6180208B2/ja active Active
-
2014
- 2014-06-10 TW TW103120029A patent/TWI583833B/zh active
- 2014-07-01 KR KR1020140081744A patent/KR101640918B1/ko active Active
- 2014-07-02 US US14/322,270 patent/US20150013594A1/en not_active Abandoned
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201016884A (en) * | 2008-07-18 | 2010-05-01 | Toshiba Kk | Vapor growth apparatus, vapor growth method, and method for manufacturing semiconductor device |
| TW201317385A (zh) * | 2011-10-27 | 2013-05-01 | Sharp Kk | 氣相成長裝置 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR101640918B1 (ko) | 2016-07-19 |
| JP2015015430A (ja) | 2015-01-22 |
| US20150013594A1 (en) | 2015-01-15 |
| JP6180208B2 (ja) | 2017-08-16 |
| KR20150006354A (ko) | 2015-01-16 |
| TW201512470A (zh) | 2015-04-01 |
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