TWI581456B - 具有聚矽氮烷黏結層之發光二極體組件 - Google Patents

具有聚矽氮烷黏結層之發光二極體組件 Download PDF

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Publication number
TWI581456B
TWI581456B TW100141513A TW100141513A TWI581456B TW I581456 B TWI581456 B TW I581456B TW 100141513 A TW100141513 A TW 100141513A TW 100141513 A TW100141513 A TW 100141513A TW I581456 B TWI581456 B TW I581456B
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TW
Taiwan
Prior art keywords
led
component
light
wavelength converter
semiconductor
Prior art date
Application number
TW100141513A
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English (en)
Chinese (zh)
Other versions
TW201232811A (en
Inventor
毛國平
楊宇
史蒂芬 約翰 納莫羅斯基
泰瑞 李 史密斯
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3M新設資產公司
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Publication date
Application filed by 3M新設資產公司 filed Critical 3M新設資產公司
Publication of TW201232811A publication Critical patent/TW201232811A/zh
Application granted granted Critical
Publication of TWI581456B publication Critical patent/TWI581456B/zh

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/851Wavelength conversion means
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/851Wavelength conversion means
    • H10H20/8511Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512Wavelength conversion materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/84Coatings, e.g. passivation layers or antireflective coatings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
    • H10H20/011Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018Bonding of wafers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
    • H10H20/034Manufacture or treatment of coatings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
    • H10H20/036Manufacture or treatment of packages
    • H10H20/0361Manufacture or treatment of packages of wavelength conversion means

Landscapes

  • Led Device Packages (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Optical Filters (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
TW100141513A 2010-11-18 2011-11-15 具有聚矽氮烷黏結層之發光二極體組件 TWI581456B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US41511510P 2010-11-18 2010-11-18

Publications (2)

Publication Number Publication Date
TW201232811A TW201232811A (en) 2012-08-01
TWI581456B true TWI581456B (zh) 2017-05-01

Family

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Family Applications (1)

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TW100141513A TWI581456B (zh) 2010-11-18 2011-11-15 具有聚矽氮烷黏結層之發光二極體組件

Country Status (7)

Country Link
US (1) US9041034B2 (cg-RX-API-DMAC7.html)
EP (1) EP2641277A4 (cg-RX-API-DMAC7.html)
JP (1) JP6132770B2 (cg-RX-API-DMAC7.html)
KR (1) KR20130128420A (cg-RX-API-DMAC7.html)
CN (1) CN103222076B (cg-RX-API-DMAC7.html)
TW (1) TWI581456B (cg-RX-API-DMAC7.html)
WO (1) WO2012067766A2 (cg-RX-API-DMAC7.html)

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KR20140022032A (ko) * 2011-05-25 2014-02-21 도와 일렉트로닉스 가부시키가이샤 발광소자 칩 및 그 제조 방법
US9506627B2 (en) 2012-08-06 2016-11-29 Koninklijke Philips N.V. Highly stable QDS-composites for solid state lighting and the method of making them through initiator-free polymerization
DE102012108939A1 (de) * 2012-09-21 2014-03-27 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement umfassend ein transparentes Auskoppelelement
DE102012217776A1 (de) * 2012-09-28 2014-06-12 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Bauelements
JP6568062B2 (ja) * 2013-07-18 2019-08-28 ルミレッズ ホールディング ベーフェー 発光デバイスのウェファのダイシング
KR20160035581A (ko) * 2013-07-19 2016-03-31 에이제트 일렉트로닉 머티어리얼스 (룩셈부르크) 에스.에이.알.엘. 발광다이오드를 위한 봉지재
TWI722242B (zh) * 2013-07-29 2021-03-21 晶元光電股份有限公司 一種半導體裝置
WO2015013864A1 (zh) 2013-07-29 2015-02-05 晶元光电股份有限公司 选择性转移半导体元件的方法
TWI766580B (zh) * 2013-07-29 2022-06-01 晶元光電股份有限公司 一種半導體裝置
US9935246B2 (en) 2013-12-30 2018-04-03 Cree, Inc. Silazane-containing materials for light emitting diodes
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EP2913355A1 (en) * 2014-02-28 2015-09-02 AZ Electronic Materials (Germany) GmbH Hybrid material for optoelectronic applications
US10000665B2 (en) 2014-02-28 2018-06-19 Az Electronic Materials (Luxembourg) S.A.R.L. Hybrid material for optoelectronic applications
KR102311677B1 (ko) 2014-08-13 2021-10-12 삼성전자주식회사 반도체소자 및 그 제조방법
US11311967B2 (en) * 2014-08-19 2022-04-26 Lumileds Llc Sapphire collector for reducing mechanical damage during die level laser lift-off
JP6807334B2 (ja) * 2015-05-13 2021-01-06 ルミレッズ ホールディング ベーフェー ダイレベルのリフトオフの最中におけるメカニカルダメージを低減するためのサファイアコレクタ
JPWO2017057454A1 (ja) * 2015-09-30 2018-07-19 東レ株式会社 発光装置の製造方法および表示装置の製造方法
KR102499548B1 (ko) * 2015-11-06 2023-03-03 엘지이노텍 주식회사 발광패키지 및 이를 포함하는 차량용 헤드램프
US10822459B2 (en) 2016-07-18 2020-11-03 Az Electronic Materials (Luxembourg) S.A.R.L. Formulation for an LED encapsulation material
JP6957594B2 (ja) 2016-07-18 2021-11-02 メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングMerck Patent GmbH Led封止材料のための配合物
JP6911541B2 (ja) 2017-05-31 2021-07-28 セイコーエプソン株式会社 発光装置およびプロジェクター
DE102017124559B4 (de) * 2017-10-20 2024-05-08 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Epitaxie-Wellenlängenkonversionselement, Licht emittierendes Halbleiterbauelement sowie Verfahren zur Herstellung des Epitaxie-Wellenlängenkonversionselements und des Licht emittierenden Halbleiterbauelements
US10652963B2 (en) 2018-05-24 2020-05-12 Lumiode, Inc. LED display structures and fabrication of same
WO2020083717A1 (en) * 2018-10-22 2020-04-30 Lumileds Holding B.V. A method of manufacturing a light converting device
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US11584882B2 (en) * 2020-02-14 2023-02-21 Osram Opto Semiconductors Gmbh Wavelength converter; method of its making and light-emitting device incorporating the element

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Also Published As

Publication number Publication date
US20130221393A1 (en) 2013-08-29
EP2641277A2 (en) 2013-09-25
WO2012067766A2 (en) 2012-05-24
WO2012067766A3 (en) 2012-07-12
CN103222076A (zh) 2013-07-24
KR20130128420A (ko) 2013-11-26
TW201232811A (en) 2012-08-01
EP2641277A4 (en) 2016-06-15
JP6132770B2 (ja) 2017-05-24
JP2013543280A (ja) 2013-11-28
US9041034B2 (en) 2015-05-26
CN103222076B (zh) 2017-10-27

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