TWI576657B - Photomask cleaning apparatus and method - Google Patents

Photomask cleaning apparatus and method Download PDF

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Publication number
TWI576657B
TWI576657B TW103145403A TW103145403A TWI576657B TW I576657 B TWI576657 B TW I576657B TW 103145403 A TW103145403 A TW 103145403A TW 103145403 A TW103145403 A TW 103145403A TW I576657 B TWI576657 B TW I576657B
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protective film
reticle
substrate
contaminant
cleaning device
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TW103145403A
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Chinese (zh)
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TW201624107A (en
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陳煜仁
曾信富
徐享乾
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台灣積體電路製造股份有限公司
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Description

光罩清潔設備以及光罩清潔方法 Mask cleaning device and mask cleaning method

本揭露主要關於一種清潔設備,尤指一種光罩清潔設備。 The disclosure relates primarily to a cleaning device, and more particularly to a reticle cleaning device.

半導體裝置使用於各種電子應用中,舉例而言,諸如個人電腦、手機、數位相機以及其他電子設備。半導體裝置的製造通常是藉由在半導體基板上多次沉積絕緣層或介電層材料、導電層材料以及半導體層材料,並使用微影製程圖案化所形成的各種材料層,藉以在此半導體基板之上形成電路零件及組件。通常在單一個半導體晶圓上製造許多積體電路,並且藉由沿著切割線在積體電路之間進行切割,以將晶圓上的各個晶粒單體化(singulated)。舉例而言,接著將個別的晶粒分別封裝在多晶片模組中或其它類型的封裝結構中。 Semiconductor devices are used in a variety of electronic applications, such as, for example, personal computers, cell phones, digital cameras, and other electronic devices. The semiconductor device is usually fabricated by depositing an insulating layer or a dielectric layer material, a conductive layer material, and a semiconductor layer material on a semiconductor substrate, and patterning various material layers by using a lithography process, whereby the semiconductor substrate is formed thereon. Circuit parts and components are formed on top. A number of integrated circuits are typically fabricated on a single semiconductor wafer, and individual dies on the wafer are singulated by cutting between the integrated circuits along the dicing lines. For example, individual dies are then packaged separately in a multi-wafer module or other type of package structure.

於上述微影製程中一般使用光罩進行材料層之圖案化。然而,光罩上若有附著污染物,則會於材料層上形成不正確的圖形,進而影響了半導體裝置的良率。 In the above lithography process, a mask is generally used to pattern the material layer. However, if contaminants are attached to the mask, an incorrect pattern is formed on the material layer, which affects the yield of the semiconductor device.

然而,關於如何去除光罩上之污染物,仍存在許多挑戰。 However, there are still many challenges regarding how to remove contaminants from the reticle.

本揭露提供一種光罩清潔設備,用以清潔一光罩,上述光罩包括一基板以及與上述基板相互間隔之一保護 膜。上述光罩清潔設備包括一超音波裝置,用以產生一超音波至上述保護膜,藉以使附著於上述保護膜之一內表面上之一內污染物掉落至上述基板。 The present disclosure provides a reticle cleaning apparatus for cleaning a reticle, the reticle including a substrate and a protection from the substrate membrane. The reticle cleaning apparatus includes an ultrasonic device for generating an ultrasonic wave to the protective film, whereby contaminants adhering to one of the inner surfaces of the protective film are dropped onto the substrate.

本揭露提供一種光罩清潔方法,包括放置一光罩至一光罩清潔設備。上述光罩清潔方法亦包括產生一超音波至上述光罩之一保護膜,以使上述保護膜產生振動,並使上述保護膜之一內表面上之一內污染物掉落至上述光罩之一基板上。上述內表面朝向上述基板且與上述基板相互間隔。上述光罩清潔方法另包括移除上述保護膜並清除上述內污染物。 The present disclosure provides a reticle cleaning method including placing a reticle to a reticle cleaning apparatus. The reticle cleaning method also includes generating a supersonic wave to a protective film of the reticle to vibrate the protective film and dropping a contaminant on one of the inner surfaces of the protective film to the reticle On a substrate. The inner surface faces the substrate and is spaced apart from the substrate. The reticle cleaning method further includes removing the protective film and removing the internal contaminants.

本揭露提供一種光罩清潔方法,包括放置一光罩至一光罩清潔設備。上述光罩清潔方法亦包括產生一超音波至上述光罩之一保護膜,以使上述保護膜之一內表面上之一內污染物掉落至上述光罩之一基板上,且振動上述保護膜之一外表面上之一外污染物。上述內表面朝向上述基板且與上述基板相互間隔。上述光罩清潔方法另包括經由一靜電消除控制器減少上述內、外污染物與上述保護膜之間的靜電,且產生一氣流至上述保護膜,以吹離上述外表面上之上述外污染物。 The present disclosure provides a reticle cleaning method including placing a reticle to a reticle cleaning apparatus. The reticle cleaning method also includes generating a supersonic wave to a protective film of the reticle to drop contaminants on one of the inner surfaces of the protective film onto one of the reticle substrates, and vibrating the protection An external contaminant on one of the outer surfaces of the membrane. The inner surface faces the substrate and is spaced apart from the substrate. The reticle cleaning method further includes reducing static electricity between the inner and outer contaminants and the protective film via a static elimination controller, and generating a gas flow to the protective film to blow off the outer pollutant on the outer surface .

1‧‧‧光罩清潔設備 1‧‧‧Photomask cleaning equipment

10‧‧‧底座 10‧‧‧Base

20‧‧‧傳輸裝置 20‧‧‧Transportation device

21‧‧‧驅動機構 21‧‧‧ drive mechanism

22‧‧‧移動機構 22‧‧‧Mobile agencies

23‧‧‧夾持機構 23‧‧‧Clamping mechanism

30‧‧‧超音波裝置 30‧‧‧Ultrasonic device

31‧‧‧電源模組 31‧‧‧Power Module

32‧‧‧震盪元件 32‧‧‧ oscillating components

40‧‧‧靜電消除控制器 40‧‧‧Static Elimination Controller

41‧‧‧靜電控制器 41‧‧‧Electrostatic controller

42‧‧‧離子產生元件 42‧‧‧Ion generating components

50‧‧‧噴氣裝置 50‧‧‧jet device

51‧‧‧氣體閥件 51‧‧‧ gas valve parts

52‧‧‧連接管 52‧‧‧Connecting tube

53‧‧‧氣體噴頭 53‧‧‧ gas nozzle

60‧‧‧液體清潔裝置 60‧‧‧Liquid cleaning device

61‧‧‧流量控制器 61‧‧‧Flow controller

62‧‧‧連接管 62‧‧‧Connecting tube

63‧‧‧液滴噴頭 63‧‧‧Dropper nozzle

70‧‧‧吸取裝置 70‧‧‧ suction device

71‧‧‧真空幫浦 71‧‧‧vacuum pump

72‧‧‧連接管 72‧‧‧Connecting tube

73‧‧‧吸取頭 73‧‧‧Sucking head

A1‧‧‧銳角 A1‧‧‧ acute angle

C1‧‧‧內污染物 Contaminants in C1‧‧

C2‧‧‧外污染物 C2‧‧‧External pollutants

D1‧‧‧移動方向 D1‧‧‧ moving direction

D2‧‧‧延伸方向 D2‧‧‧ extending direction

D3‧‧‧調整方向 D3‧‧‧Adjustment direction

L1‧‧‧液滴 L1‧‧‧ droplet

M1‧‧‧光罩 M1‧‧‧Photo Mask

M11‧‧‧基板 M11‧‧‧ substrate

M12‧‧‧圖案層 M12‧‧‧ pattern layer

M13‧‧‧表面 M13‧‧‧ surface

M14‧‧‧框架 M14‧‧‧Frame

M15‧‧‧保護膜 M15‧‧‧ protective film

M151、M152、M153、M154‧‧‧側邊 Sides of M151, M152, M153, M154‧‧

M16‧‧‧內表面 M16‧‧‧ inner surface

M17‧‧‧外表面 M17‧‧‧ outer surface

P1‧‧‧水平面 P1‧‧‧ water level

第1圖為根據一些實施例之光罩清潔設備的立體圖。 1 is a perspective view of a reticle cleaning apparatus in accordance with some embodiments.

第2圖為根據一些實施例之光罩的剖視圖。 2 is a cross-sectional view of a reticle in accordance with some embodiments.

第3圖為根據一些實施例之光罩清潔方法的流程圖。 Figure 3 is a flow diagram of a reticle cleaning method in accordance with some embodiments.

第4A、4B與4C圖為根據一些實施例之光罩清潔方法於中間階段的示意圖。 4A, 4B, and 4C are schematic views of the reticle cleaning method in an intermediate stage in accordance with some embodiments.

以下將詳細說明本發明之各個實施例的製造和使用。然而,應可理解的是,本發明之實施例提供許多適用於本發明的概念,能夠體現在特定的上下文中。本文中所討論的特定實施例僅用以說明,並非用以限制本發明的保護範圍。 The making and using of various embodiments of the present invention are described in detail below. However, it should be understood that the embodiments of the present invention are intended to provide a number of concepts that are applicable to the present invention and can be embodied in a particular context. The specific embodiments discussed herein are for illustrative purposes only and are not intended to limit the scope of the invention.

應可理解的是,以下的說明書提供許多不同的實施例或示範例,用於實現本揭露的不同特徵結構。組件及排列方式的具體實施例描述如下,以簡化本揭露。當然,這些具體實施例僅用以例示,並非用以限制本發明的保護範圍。再者,說明書中提到在第二製程進行之前實施第一製程可包括第二製程於第一製程之後立即進行第二製程,也可包括有其他製程介於第一製程與第二製程之間的實施例。為了使說明更加簡單和清晰,可以任意比例繪製各種特徵結構。此外,說明書中提及形成第一特徵結構位於第二特徵結構之上,可包括第一特徵結構與第二特徵結構是直接接觸或非直接接觸的實施例。 It should be understood that the following description provides many different embodiments or examples for implementing the various features of the disclosure. Specific embodiments of the components and arrangements are described below to simplify the disclosure. Of course, these specific embodiments are for illustrative purposes only and are not intended to limit the scope of the invention. Furthermore, the specification mentions that implementing the first process before the second process is performed may include the second process performing the second process immediately after the first process, or may include other processes between the first process and the second process. An embodiment. In order to make the description simpler and clearer, various feature structures can be drawn at any scale. Furthermore, reference to the formation of the first feature structure over the second feature structure may include embodiments in which the first feature structure is in direct or indirect contact with the second feature structure.

下文描述實施例的各種變化。藉由各種視圖與所揭露之實施例,類似的元件標號用於標示類似的元件。應可理解的是,額外的操作步驟可實施於所述方法之前、之間或之後,且在所述方法的其他實施例中,可以取代或省略部分的操作步驟。 Various variations of the embodiments are described below. Similar elements are labeled to identify similar elements by the various views and the disclosed embodiments. It will be appreciated that additional operational steps may be performed before, during or after the method, and that in other embodiments of the method, portions of the operational steps may be substituted or omitted.

本揭露提供光罩清潔設備與光罩清潔方法之各種實施例。第1圖為根據一些實施例之光罩清潔設備1的立體圖。光罩清潔設備1用以清潔一光罩M1。光罩清潔設備1包括一底座10、一傳輸裝置20、一超音波裝置30、一靜電消除控制器40、 一噴氣裝置50、一液體清潔裝置60、以及一吸取裝置70。 The present disclosure provides various embodiments of a reticle cleaning apparatus and a reticle cleaning method. Figure 1 is a perspective view of a reticle cleaning apparatus 1 in accordance with some embodiments. The mask cleaning device 1 is used to clean a mask M1. The reticle cleaning device 1 includes a base 10, a transmission device 20, an ultrasonic device 30, and a static elimination controller 40. A jet device 50, a liquid cleaning device 60, and a suction device 70.

傳輸裝置20設置於底座10上,用以移動、旋轉、以及夾持光罩M1。於一些實施例中,傳輸裝置20包括二驅動機構21、一移動機構22、以及一夾持機構23。驅動機構21設置於底座10,用以旋轉移動機構22。於一些實施例中,移動機構22繞一移動方向D1旋轉。 The transport device 20 is disposed on the base 10 for moving, rotating, and clamping the reticle M1. In some embodiments, the transport device 20 includes two drive mechanisms 21, a moving mechanism 22, and a clamping mechanism 23. The driving mechanism 21 is disposed on the base 10 for rotating the moving mechanism 22. In some embodiments, the moving mechanism 22 rotates about a moving direction D1.

移動機構22之兩端分別連接於驅動機構21。移動機構22用以將夾持機構23沿移動方向D1移動。於一些實施例中,移動機構22沿移動方向D1延伸。夾持機構23設置於移動機構22上,用以夾持光罩M1。 Both ends of the moving mechanism 22 are respectively connected to the driving mechanism 21. The moving mechanism 22 is for moving the clamping mechanism 23 in the moving direction D1. In some embodiments, the moving mechanism 22 extends in the direction of movement D1. The clamping mechanism 23 is disposed on the moving mechanism 22 for clamping the reticle M1.

於一些實施例中,驅動機構21驅動移動機構22移動夾持機構23,以使光罩M1延移動方向D1移動。此外,驅動機構21旋轉移動機構22,以使光罩M1位於平行於一水平面之一水平位置,或是使光罩M1相對於水平面傾斜。 In some embodiments, the drive mechanism 21 drives the moving mechanism 22 to move the clamping mechanism 23 to move the reticle M1 in the moving direction D1. Further, the drive mechanism 21 rotates the moving mechanism 22 such that the reticle M1 is positioned at a horizontal position parallel to a horizontal plane or the reticle M1 is inclined with respect to the horizontal plane.

第2圖為根據一些實施例之光罩M1的剖視圖。光罩M1包括一基板M11、一框架M14、以及一保護膜M15。基板M11可由透光材質所製成,例如石英或玻璃。基板M11具有一圖案層M12,位於基板M11之一表面M13。 Figure 2 is a cross-sectional view of a reticle M1 in accordance with some embodiments. The mask M1 includes a substrate M11, a frame M14, and a protective film M15. The substrate M11 may be made of a light transmissive material such as quartz or glass. The substrate M11 has a pattern layer M12 on one surface M13 of the substrate M11.

框架M14設置於基板M11之表面M13,且包圍圖案層M12。框架M14用以固定保護膜M15,且使保護膜M15與基板M11相互間隔。於一些實施例中,框架M14為一方形結構,且框架M14垂直於基板M11之表面M13延伸。 The frame M14 is disposed on the surface M13 of the substrate M11 and surrounds the pattern layer M12. The frame M14 is for fixing the protective film M15, and the protective film M15 and the substrate M11 are spaced apart from each other. In some embodiments, the frame M14 is a square structure, and the frame M14 extends perpendicular to the surface M13 of the substrate M11.

保護膜M15設置於框架M14,且與基板M11相互間隔。於一些實施例中,保護膜M15與基板M11相互平行。保護 膜M15、框架M14與基板M11形成一密閉空間。保護膜M15之一內表面M16朝向圖案層M12,且保護膜M15之一外表面M17,相反於內表面M16。於一些實施例中,保護膜M15由透光材質所製成。 The protective film M15 is disposed on the frame M14 and spaced apart from the substrate M11. In some embodiments, the protective film M15 and the substrate M11 are parallel to each other. protection The film M15, the frame M14 and the substrate M11 form a sealed space. One inner surface M16 of the protective film M15 faces the pattern layer M12, and one outer surface M17 of the protective film M15 is opposite to the inner surface M16. In some embodiments, the protective film M15 is made of a light transmissive material.

於一些情況下,保護膜M15可能會附著一些污染物(C1及/或C2),其會影響利用光罩M1進行曝光時所形成之圖案。由於保護膜M15之厚度很薄,因此光罩M1於目檢或是檢測儀器(圖未示)之檢查下,難以分辨污染物是位於保護膜M15之內表面M16或是外表面M17。 In some cases, the protective film M15 may adhere to some contaminants (C1 and/or C2), which may affect the pattern formed by exposure using the mask M1. Since the thickness of the protective film M15 is very thin, it is difficult to distinguish whether the contaminant is located on the inner surface M16 or the outer surface M17 of the protective film M15 under inspection by a visual inspection or a detecting instrument (not shown).

舉例而言,上述之污染物可為灰塵或是化學物質等。如第1、2圖所示,內污染物C1可能會附著於內表面M16、外污染物C2可能會附著於外表面M17。因此,若僅針對保護膜M15之外表面M17進行一般性清潔,將無法清除內污染物C1。 For example, the contaminants mentioned above may be dust or chemicals. As shown in Figures 1 and 2, the internal contaminant C1 may adhere to the inner surface M16, and the outer contaminant C2 may adhere to the outer surface M17. Therefore, if general cleaning is performed only on the outer surface M17 of the protective film M15, the internal contaminant C1 cannot be removed.

如第1圖所示,超音波裝置30設置於底座10上方。超音波裝置30用以產生一超音波至保護膜M15,藉以使保護膜M15、內污染物C1以及外污染物C2產生振動。於一些實施例中,超音波之頻率約為18kHz至2MHz的範圍之間。 As shown in FIG. 1, the ultrasonic device 30 is disposed above the base 10. The ultrasonic device 30 is for generating an ultrasonic wave to the protective film M15, thereby causing the protective film M15, the internal contaminant C1, and the external contaminant C2 to vibrate. In some embodiments, the frequency of the ultrasonic waves is between about 18 kHz and 2 MHz.

當內污染物C1與保護膜M15產生振動時,會使得內污染物C1掉落至基板M11上之圖案層M12。之後,以目檢或經由檢測儀器檢查基板M11之圖案層M12,即可判斷光罩M1之內部是否具有內污染物C1需要加以清除。 When the inner contaminant C1 and the protective film M15 vibrate, the inner contaminant C1 is dropped to the pattern layer M12 on the substrate M11. Thereafter, by visual inspection or inspection of the pattern layer M12 of the substrate M11 via a detecting instrument, it is judged whether or not the inside of the mask M1 has the internal contaminant C1 to be removed.

超音波裝置30包括一電源模組31以及一震盪元件32。震盪元件32耦接於電源模組31。當電源模組31供應電力至震盪元件32時,會使得震盪元件32產生振動。震盪元件32可沿 一延伸方向D2延伸及環繞D2旋轉。於一些實施例中,延伸方向D2垂直於移動方向D1。震盪元件32之寬度約為保護膜M15之寬度。於一些實施例中,震盪元件32位於移動機構22之上方。於一些實施例中,震盪元件32可沿一調整方向D3移動,藉以調整震盪元件32與光罩M1之間的距離。此外,震盪元件32可沿延伸方向D2旋轉,藉以調整震盪元件32朝向光罩M1的角度。 The ultrasonic device 30 includes a power module 31 and an oscillating member 32. The oscillating component 32 is coupled to the power module 31. When the power module 31 supplies power to the oscillating member 32, the oscillating member 32 is caused to vibrate. Oscillating element 32 can be along An extension direction D2 extends and rotates around D2. In some embodiments, the extension direction D2 is perpendicular to the movement direction D1. The width of the oscillating member 32 is approximately the width of the protective film M15. In some embodiments, the oscillating member 32 is located above the moving mechanism 22. In some embodiments, the oscillating member 32 is movable in an adjustment direction D3 to adjust the distance between the oscillating member 32 and the reticle M1. Further, the oscillating member 32 is rotatable in the extending direction D2 to adjust the angle of the oscillating member 32 toward the reticle M1.

由於當超音波裝置30產生超音波至保護膜M15時,可能會使得保護膜M15與污染物之間產生靜電,使得污染物經由靜電力吸附於保護膜M15。因此靜電消除控制器40可用以減少污染物與保護膜M15之間的靜電,使得污染物較容易與保護膜M15層分離。 Since the ultrasonic wave device 30 generates ultrasonic waves to the protective film M15, static electricity may be generated between the protective film M15 and the contaminant, so that the contaminant is adsorbed to the protective film M15 via the electrostatic force. Therefore, the static electricity eliminating controller 40 can be used to reduce static electricity between the contaminant and the protective film M15, so that the contaminants are more easily separated from the protective film M15 layer.

靜電消除控制器40可包括一靜電控制器41以及一離子產生元件42。離子產生元件42耦接於靜電控制器41。當靜電控制器41供應電力至離子產生元件42時,會使得離子產生元件42產生離子,於一些實施例中,上述離子為負離子。離子產生元件42用以產生離子至保護膜M15。 The static elimination controller 40 can include an electrostatic controller 41 and an ion generating component 42. The ion generating component 42 is coupled to the electrostatic controller 41. When the electrostatic controller 41 supplies power to the ion generating element 42, it causes the ion generating element 42 to generate ions, which in some embodiments are negative ions. The ion generating element 42 is used to generate ions to the protective film M15.

於一些實施例中,離子產生元件42可沿延伸方向D2延伸。離子產生元件42之寬度約為保護膜M15之寬度。於一些實施例中,離子產生元件42位於移動機構22之上方。於一些實施例中,離子產生元件42可沿調整方向D3移動,藉以調整離子產生元件42與光罩M1之間的距離。此外,離子產生元件42可沿延伸方向D2旋轉,藉以調整離子產生元件42朝向光罩M1的角度。 In some embodiments, the ion generating element 42 can extend along the direction of extension D2. The width of the ion generating element 42 is approximately the width of the protective film M15. In some embodiments, the ion generating element 42 is located above the moving mechanism 22. In some embodiments, the ion generating element 42 is movable in the adjustment direction D3 to adjust the distance between the ion generating element 42 and the reticle M1. Further, the ion generating element 42 is rotatable in the extending direction D2 to adjust the angle of the ion generating element 42 toward the mask M1.

噴氣裝置50用以產生一氣流至上述保護膜M15。當超音波裝置30所產生之超音波使外污染物C2相對於保護膜M15振動時,可藉由上述氣流將外污染物C2吹離上述保護膜M15。 The jet device 50 is used to generate a gas flow to the protective film M15. When the ultrasonic wave generated by the ultrasonic device 30 causes the external contaminant C2 to vibrate with respect to the protective film M15, the external contaminant C2 can be blown away from the protective film M15 by the above-described air current.

噴氣裝置50可包括一氣體閥件51、一連接管52、以及一氣體噴頭53。氣體閥件51用以控制氣體釋放。於一些實施例中,上述氣體可為一氮氣。連接管52用以連接氣體閥件51與氣體噴頭53。氣體閥件51所加壓之氣體經由連接管52至氣體噴頭53噴出。氣體噴頭53用以噴出氣流至保護膜M15。 The jet device 50 can include a gas valve member 51, a connecting tube 52, and a gas jet head 53. The gas valve member 51 is used to control gas release. In some embodiments, the gas can be a nitrogen gas. The connecting pipe 52 is for connecting the gas valve member 51 and the gas jet head 53. The gas pressurized by the gas valve member 51 is ejected through the connecting pipe 52 to the gas jet head 53. The gas jet head 53 is for discharging a gas flow to the protective film M15.

於一些實施例中,氣體噴頭53可沿延伸方向D2延伸。氣體噴頭53之寬度約為保護膜M15之寬度。於一些實施例中,氣體噴頭53位於移動機構22之上方。於一些實施例中,氣體噴頭53可沿調整方向D3移動,藉以調整氣體噴頭53與光罩M1之間的距離。此外,氣體噴頭53可沿延伸方向D2旋轉,藉以調整氣體噴頭53朝向光罩M1的角度。 In some embodiments, the gas showerhead 53 can extend along the direction of extension D2. The width of the gas jet head 53 is approximately the width of the protective film M15. In some embodiments, the gas showerhead 53 is located above the moving mechanism 22. In some embodiments, the gas jet head 53 is movable in the adjustment direction D3 to adjust the distance between the gas jet head 53 and the reticle M1. Further, the gas jet head 53 is rotatable in the extending direction D2 to adjust the angle of the gas jet head 53 toward the mask M1.

液體清潔裝置60用以將液滴L1(如第4C圖所示)滴至保護膜M15之外表面M17。當外污染物C2黏滯於外表面M17時,可經由液滴L1流經外污染物C2時,將外污染物C2與外表面M17分離。 The liquid cleaning device 60 is for dropping the droplet L1 (as shown in FIG. 4C) onto the outer surface M17 of the protective film M15. When the external contaminant C2 sticks to the outer surface M17, the outer contaminant C2 can be separated from the outer surface M17 when flowing through the outer contaminant C2 via the droplet L1.

液體清潔裝置60可包括一流量控制器61、一連接管62、以及一液滴噴頭63。流量控制器61用以輸出一清潔液,並用以控制上述清潔液之流量。連接管62用以連接流量控制器61與液滴噴頭63。由流量控制器61所輸出之清潔液經由連接管62至液滴噴頭63。藉由流量控制器61間歇性或連續性地輸出清 潔液,以使液滴噴頭63產生液滴L1。於一些實施例中,上述清潔液與液滴L1可為一溶劑。於一些實施例中,液滴噴頭63可沿調整方向D3移動,藉以調整液滴噴頭63與光罩M1之間的距離。此外,液滴噴頭63可沿延伸方向D2旋轉,藉以調整液滴噴頭63朝向光罩M1的角度。 The liquid cleaning device 60 can include a flow controller 61, a connecting tube 62, and a droplet discharge head 63. The flow controller 61 is configured to output a cleaning liquid and to control the flow rate of the cleaning liquid. The connecting pipe 62 is used to connect the flow controller 61 and the droplet discharge head 63. The cleaning liquid outputted from the flow controller 61 passes through the connection pipe 62 to the droplet discharge head 63. Outputted intermittently or continuously by the flow controller 61 The liquid is cleaned so that the droplet discharge head 63 produces the droplet L1. In some embodiments, the cleaning liquid and the droplet L1 may be a solvent. In some embodiments, the droplet discharge head 63 is movable in the adjustment direction D3 to adjust the distance between the droplet discharge head 63 and the mask M1. Further, the droplet discharge head 63 is rotatable in the extending direction D2 to adjust the angle of the droplet discharge head 63 toward the mask M1.

吸取裝置70用以吸取外表面M17上之液滴L1。吸取裝置70可包括一真空幫浦71、一連接管72、以及一吸取頭73。真空幫浦71用以提供一負壓。連接管72用以連接真空幫浦71以及吸取頭73。吸取頭73藉由真空幫浦71所產生之負壓吸取液滴L1。 The suction device 70 is for sucking the liquid droplet L1 on the outer surface M17. The suction device 70 can include a vacuum pump 71, a connecting tube 72, and a suction head 73. The vacuum pump 71 is used to provide a negative pressure. The connecting pipe 72 is used to connect the vacuum pump 71 and the suction head 73. The suction head 73 sucks the liquid droplet L1 by the negative pressure generated by the vacuum pump 71.

於一些實施例中,如第4C圖所示,藉由驅動機構21將光罩M1相對於水平面傾斜,使得液滴L1於外表面M17流動,並帶離液滴L1之移動路徑上的外污染物C2。當液滴L1流至外表面M17之邊緣時,吸取頭73吸取液滴L1,以避免液滴L1落至底座10上。 In some embodiments, as shown in FIG. 4C, the reticle M1 is tilted relative to the horizontal plane by the driving mechanism 21, so that the droplet L1 flows on the outer surface M17 and is exposed to the external pollution on the moving path of the droplet L1. C2. When the droplet L1 flows to the edge of the outer surface M17, the suction head 73 sucks the droplet L1 to prevent the droplet L1 from falling onto the base 10.

第3圖為根據一些實施例之光罩清潔方法的流程圖。第4A、4B與4C圖為根據一些實施例之光罩清潔方法於中間階段的示意圖。於步驟S101中,當光罩M1經由目檢或是檢測儀器檢測後,發現保護膜M15上具有污染物。可將光罩M1放置至光罩清潔設備1以進行清潔。 Figure 3 is a flow diagram of a reticle cleaning method in accordance with some embodiments. 4A, 4B, and 4C are schematic views of the reticle cleaning method in an intermediate stage in accordance with some embodiments. In step S101, when the mask M1 is detected by visual inspection or a detecting instrument, it is found that the protective film M15 has contaminants. The reticle M1 can be placed to the reticle cleaning apparatus 1 for cleaning.

於步驟S103中,進行一光罩清潔程序。首先,可先啟動超音波裝置30,以使震盪元件32產生超音波;啟動靜電消除控制器40,以使離子產生元件42產生負離子;以及啟動噴氣裝置50,以使氣體噴頭53產生氣流。之後,使光罩M1與震 盪元件32、離子產生元件42以及氣體噴頭53進行相對移動。 In step S103, a mask cleaning process is performed. First, the ultrasonic device 30 can be activated to cause the oscillating member 32 to generate ultrasonic waves; the static electricity eliminating controller 40 is activated to cause the ion generating member 42 to generate negative ions; and the air jet device 50 is activated to cause the gas jet head 53 to generate an air flow. After that, make the mask M1 and shock The swash element 32, the ion generating element 42, and the gas jet head 53 are relatively moved.

於一些實施例中,移動機構22移動夾持機構23以使光罩M1沿移動方向D1移動。此時,如第4A、4B圖所示,震盪元件32、離子產生元件42以及氣體噴頭53會依序經過保護膜M15之一側邊M151的上方至另一相對側邊M152的上方。 In some embodiments, the moving mechanism 22 moves the clamping mechanism 23 to move the reticle M1 in the moving direction D1. At this time, as shown in FIGS. 4A and 4B, the oscillation element 32, the ion generating element 42, and the gas jet head 53 sequentially pass over the side M151 of one side of the protective film M15 to the upper side of the other opposite side M152.

當震盪元件32經過保護膜M15之上方時,震盪元件32利用超音波由側邊M151至側邊M152振動保護膜M15,以使保護膜M15之內表面M16(如第2圖所示)上的內污染物C1掉落至基板M11之圖案層M12上,亦使外污染物C2相對於保護膜M15產生振動並飄散至環境中。 When the oscillating member 32 passes over the protective film M15, the oscillating member 32 vibrates the protective film M15 from the side M151 to the side M152 by ultrasonic waves so that the inner surface M16 of the protective film M15 (as shown in FIG. 2) The internal contaminant C1 is dropped onto the pattern layer M12 of the substrate M11, and the external contaminant C2 is also vibrated relative to the protective film M15 and is dispersed into the environment.

當離子產生元件42經過保護膜M15之上方時,離子產生元件42由保護膜M15之側邊M151至側邊M152利用負離子減少污染物與保護膜M15之間的靜電,使得污染物較容易與保護膜M15層分離。 When the ion generating element 42 passes over the protective film M15, the ion generating element 42 reduces the static electricity between the contaminant and the protective film M15 by the negative ions from the side M151 to the side M152 of the protective film M15, so that the contaminant is easier and protected. The membrane M15 layer was separated.

當氣體噴頭53經過保護膜M15之上方時,氣體噴頭53由保護膜M15之側邊M151至側邊M152噴出氣流,用以吹離保護膜M15之外表面M17(如第2圖所示)上之外污染物C2。 When the gas jet head 53 passes over the protective film M15, the gas jet head 53 ejects a gas stream from the side M151 to the side edge M152 of the protective film M15 for blowing off the outer surface M17 of the protective film M15 (as shown in FIG. 2). Contaminant C2 outside.

由於藉由超音波裝置30所產生之超音波,使得外污染物C2相對於保護膜M15產生振動,因此外污染物C2可藉由氣體噴頭53所產生之氣流輕易的吹離。此外,於一些實施例中,氣流之風壓可約為1Kg/cm2至10Kg/cm2的範圍之間,可低於不使用超音波裝置30時之氣流的風壓,可防止氣流吹破保護膜M15。 Since the external contaminant C2 vibrates with respect to the protective film M15 by the ultrasonic waves generated by the ultrasonic device 30, the external contaminant C2 can be easily blown off by the air current generated by the gas jet head 53. In addition, in some embodiments, the wind pressure of the airflow may be between about 1 Kg/cm 2 and 10 Kg/cm 2 , which may be lower than the air pressure of the airflow when the ultrasonic device 30 is not used, thereby preventing the airflow from being blown. Protective film M15.

於步驟S105中,由於內污染物C1已經由超音波震 離於保護膜M15,因此可藉由目檢或檢測儀器檢查基板M11之圖案層M12上是否有內污染物C1,進而能輕易地分辯內污染物C1是位於光罩之內部。當光罩M1未具有內污染物C1時,可進行步驟S109。若具有內污染物C1時,於步驟S107中,則可移除保護膜M15並清除圖案層M12上之內污染物C1。清除完內污染物C1後,可安裝保護膜M15至基板M11上。於一些實施例中,可安裝另一保護膜至基板M11上。 In step S105, since the internal pollutant C1 has been shocked by ultrasonic waves Since the protective film M15 is removed, it is possible to check whether there is an internal contaminant C1 on the pattern layer M12 of the substrate M11 by visual inspection or a detecting instrument, and thus it can be easily discriminated that the internal contaminant C1 is located inside the photomask. When the mask M1 does not have the internal contaminant C1, step S109 can be performed. If there is an internal contaminant C1, in step S107, the protective film M15 can be removed and the contaminant C1 on the pattern layer M12 can be removed. After the internal contaminant C1 is removed, the protective film M15 can be mounted on the substrate M11. In some embodiments, another protective film can be mounted onto the substrate M11.

於一些實施例中,進行完步驟S107之處理後,可針對保護膜M15再次進行檢測,若保護膜M15檢測出污染物時,可重新執行步驟S101,藉以進行光罩清潔程序。 In some embodiments, after the process of step S107 is performed, the detection may be performed again for the protective film M15. If the protective film M15 detects the contaminant, step S101 may be re-executed to perform the mask cleaning process.

於步驟S109中,對步驟S105中未具有內污染物C1的光罩M1或是對於步驟S107中已清除內污染物C1之光罩M1再度進行保護膜M15之檢測,用以檢查保護膜M15上是否具有外污染物C2殘留。 In step S109, the mask M1 having no internal contaminant C1 in step S105 or the mask M1 having the inner contaminant C1 removed in step S107 is again subjected to detection of the protective film M15 for inspecting the protective film M15. Whether there is residual C2 residue.

當未具有外污染物C2時,可進行步驟S111,將光罩M1傳送至一半導體設備(圖未示)中。於一些實施例中,上述之半導體設備為一微影製程設備或是一光罩儲存設備等。 When there is no external contaminant C2, step S111 may be performed to transfer the mask M1 to a semiconductor device (not shown). In some embodiments, the semiconductor device is a lithography process device or a reticle storage device.

於步驟S109中,當保護膜M15上具有外污染物C2殘留時,可進行步驟S113,以進行一液體清潔程序。由於此時大部分之污染物已經清除,僅將最後殘留於保護膜M15之外表面M17的外污染物C2藉由液體清潔裝置清洗,可減少清潔液之使用。 In step S109, when the outer film C2 remains on the protective film M15, step S113 may be performed to perform a liquid cleaning process. Since most of the contaminants have been removed at this time, only the external contaminant C2 remaining on the outer surface M17 of the protective film M15 is cleaned by the liquid cleaning device, and the use of the cleaning liquid can be reduced.

首先,若光罩M1曾移出光罩清潔設備1時,將光罩M1再次夾持於夾持機構23。如第4C圖所示,移動機構22將夾 持機構23與光罩M1移動至液滴噴頭63與吸取頭73之間。之後,驅動機構21轉動移動機構22,以將光罩M1相對於一水平面P1傾斜。於一些實施例中,光罩M1與水平面P1之間具有一銳角A1。銳角A1約為1度至85度的範圍之間。 First, when the mask M1 has been removed from the mask cleaning apparatus 1, the mask M1 is again clamped to the chucking mechanism 23. As shown in Figure 4C, the moving mechanism 22 will clamp The holding mechanism 23 and the mask M1 are moved between the droplet discharge head 63 and the suction head 73. Thereafter, the drive mechanism 21 rotates the moving mechanism 22 to incline the mask M1 with respect to a horizontal plane P1. In some embodiments, the mask M1 has an acute angle A1 with the horizontal plane P1. The acute angle A1 is between about 1 degree and 85 degrees.

啟動流量控制器61將液滴L1經由液滴噴頭63滴保護膜M15外表面M17(如第2圖所示)之一側邊M153。由於光罩M1之傾斜,上述液滴L1經由側邊M153流至外表面M17之一側邊M154。當液滴L1流至側邊M154時經由吸取頭73吸取,以防止液滴L1滴落至底座10。 The start flow controller 61 drops the droplet L1 to the side M153 of one of the outer surfaces M17 (shown in FIG. 2) of the protective film M15 via the droplet discharge head 63. Due to the inclination of the mask M1, the above-mentioned droplet L1 flows to the side M154 of one of the outer surfaces M17 via the side M153. When the droplet L1 flows to the side edge M154, it is sucked through the suction head 73 to prevent the droplet L1 from dripping to the base 10.

於一些實施例中,檢測儀器分析污染物於保護膜M15上之座標。移動機構22依據外污染物C2之座標移動光罩M1,以使得液滴L1於保護膜M15上移動之路徑經過外污染物C2,如第4C圖所示,以減少液滴L1接觸保護面的面積。 In some embodiments, the detection instrument analyzes the coordinates of the contaminant on the protective film M15. The moving mechanism 22 moves the reticle M1 according to the coordinates of the outer pollutant C2, so that the path of the droplet L1 moving on the protective film M15 passes through the external pollutant C2, as shown in FIG. 4C, to reduce the contact of the droplet L1 with the protective surface. area.

經由步驟S113之液體清潔程序,應可使黏滯於保護膜M15上之外污染物C2經由液滴L1清除。之後可將光罩M1傳送至半導體設備中(步驟S111)。於一些實施例中,光罩M1之保護膜M15可再次經由目檢或是檢測儀器檢測。若保護膜M15上具有污染物,則可再次進行步驟S103之光罩清潔程序或是步驟S113之液體清潔程序。 Through the liquid cleaning procedure of step S113, the contaminant C2 adhering to the protective film M15 should be removed via the droplet L1. The photomask M1 can then be transferred to the semiconductor device (step S111). In some embodiments, the protective film M15 of the mask M1 can be detected again by visual inspection or by a detecting instrument. If there is a contaminant on the protective film M15, the reticle cleaning procedure of step S103 or the liquid cleaning procedure of step S113 may be performed again.

本揭露提供光罩清潔設備以及光罩清潔方法的實施例。藉由超音波裝置30將保護膜M15上之內污染物C1震離保護膜M15,即可分辨內污染物C1原本是附著於保護膜M15之內表面M16,以避免藉由清潔保護膜M15之外表面M17來清潔內污染物C1。此外,亦藉由超音波裝置30使保護膜M15之外表面 M17上的外污染物C2相對於保護膜M15振動,並能以較低風壓之氣流將外污染物C2吹離保護膜M15,以避免保護膜M15被氣流吹破。 The present disclosure provides embodiments of a reticle cleaning apparatus and a reticle cleaning method. By the ultrasonic device 30, the contaminant C1 on the protective film M15 is shaken away from the protective film M15, and it can be distinguished that the internal contaminant C1 is originally attached to the inner surface M16 of the protective film M15 to avoid cleaning the protective film M15. The outer surface M17 cleans the internal contaminant C1. In addition, the outer surface of the protective film M15 is also made by the ultrasonic device 30. The external contaminant C2 on M17 vibrates relative to the protective film M15, and can blow the outer contaminant C2 away from the protective film M15 with a flow of a lower wind pressure to prevent the protective film M15 from being blown by the air flow.

在一些實施例中,本揭露提供一種光罩清潔設備,用以清潔一光罩,上述光罩包括一基板以及與上述基板相互間隔之一保護膜。上述光罩清潔設備包括一超音波裝置,用以產生一超音波至上述保護膜,藉以使附著於上述保護膜之一內表面上之一內污染物掉落至上述基板。 In some embodiments, the present disclosure provides a reticle cleaning apparatus for cleaning a reticle, the reticle including a substrate and a protective film spaced apart from the substrate. The reticle cleaning apparatus includes an ultrasonic device for generating an ultrasonic wave to the protective film, whereby contaminants adhering to one of the inner surfaces of the protective film are dropped onto the substrate.

在一些實施例中,本揭露提供一種光罩清潔方法,包括放置一光罩至一光罩清潔設備。上述光罩清潔方法亦包括產生一超音波至上述光罩之一保護膜,以使上述保護膜產生振動,並使上述保護膜之一內表面上之一內污染物掉落至上述光罩之一基板上。上述內表面朝向上述基板且與上述基板相互間隔。上述光罩清潔方法另包括移除上述保護膜並清除上述內污染物。 In some embodiments, the present disclosure provides a reticle cleaning method including placing a reticle to a reticle cleaning apparatus. The reticle cleaning method also includes generating a supersonic wave to a protective film of the reticle to vibrate the protective film and dropping a contaminant on one of the inner surfaces of the protective film to the reticle On a substrate. The inner surface faces the substrate and is spaced apart from the substrate. The reticle cleaning method further includes removing the protective film and removing the internal contaminants.

在一些實施例中,本揭露提供一種光罩清潔方法,包括放置一光罩至一光罩清潔設備。上述光罩清潔方法亦包括產生一超音波至上述光罩之一保護膜,以使上述保護膜之一內表面上之一內污染物掉落至上述光罩之一基板上,且振動上述保護膜之一外表面上之一外污染物。上述內表面朝向上述基板且與上述基板相互間隔。上述光罩清潔方法另包括經由一靜電消除控制器減少上述內、外污染物與上述保護膜之間的靜電,且產生一氣流至上述保護膜M15,以吹離上述外表面上之上述外污染物。 In some embodiments, the present disclosure provides a reticle cleaning method including placing a reticle to a reticle cleaning apparatus. The reticle cleaning method also includes generating a supersonic wave to a protective film of the reticle to drop contaminants on one of the inner surfaces of the protective film onto one of the reticle substrates, and vibrating the protection An external contaminant on one of the outer surfaces of the membrane. The inner surface faces the substrate and is spaced apart from the substrate. The reticle cleaning method further includes reducing static electricity between the inner and outer contaminants and the protective film via a static elimination controller, and generating a gas flow to the protective film M15 to blow off the external pollution on the outer surface. Things.

雖然本發明已以數個較佳實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明之精神和範圍內,當可作任意之更動與潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。例如,所屬技術領域中具有通常知識者應可理解,在不脫離本發明之精神和範圍內,可對本說明書所述之多數特徵結構、功能、製程及材料作任意之更動與潤飾。 While the invention has been described above in terms of several preferred embodiments, it is not intended to limit the scope of the present invention, and any one of ordinary skill in the art can make any changes without departing from the spirit and scope of the invention. And the scope of the present invention is defined by the scope of the appended claims. For example, it will be understood by those of ordinary skill in the art that the various features, functions, processes, and materials described herein can be modified and modified in any manner without departing from the spirit and scope of the invention.

再者,本發明的保護範圍並不限於說明書中所描述之特定實施例中的製程、機器、製造、物質組合物、手段、方法及步驟。任何所屬技術領域中具有通常知識者在理解本發明所揭露之既有的或即將發展的內容、製程、機器、製造、物質組合物、手段、方法或步驟之後,依據相關實施例及替代實施例,可能會執行與本說明書所描述之相應實施例基本上相同的功能或產生基本上相同的結果。因此,本發明的申請範圍包括在製程、機器、製造、物質組合物、手段、方法或步驟中所有因此產生的修改及變更,並未受到限制。此外,每個申請範圍構成一個單獨的實施例,且不同申請範圍及實施例的組合亦屬於本發明的保護範圍。 Further, the scope of the present invention is not limited to the processes, machines, manufacture, compositions, means, methods and steps in the specific embodiments described in the specification. </ RTI> </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> </ RTI> <RTIgt; It is possible to perform substantially the same functions as the corresponding embodiments described in this specification or to produce substantially the same results. Accordingly, the scope of the invention is to be construed as being limited to the modifications and variations thereof in the process, the machine, the manufacture, the composition of matter, the means, the method, or the steps. In addition, each application scope constitutes a separate embodiment, and combinations of different application scopes and embodiments are also within the scope of the invention.

1‧‧‧光罩清潔設備 1‧‧‧Photomask cleaning equipment

10‧‧‧底座 10‧‧‧Base

20‧‧‧傳輸裝置 20‧‧‧Transportation device

21‧‧‧驅動機構 21‧‧‧ drive mechanism

22‧‧‧移動機構 22‧‧‧Mobile agencies

23‧‧‧夾持機構 23‧‧‧Clamping mechanism

30‧‧‧超音波裝置 30‧‧‧Ultrasonic device

31‧‧‧電源模組 31‧‧‧Power Module

32‧‧‧震盪元件 32‧‧‧ oscillating components

40‧‧‧靜電消除控制器 40‧‧‧Static Elimination Controller

41‧‧‧靜電控制器 41‧‧‧Electrostatic controller

42‧‧‧離子產生元件 42‧‧‧Ion generating components

50‧‧‧噴氣裝置 50‧‧‧jet device

51‧‧‧氣體閥件 51‧‧‧ gas valve parts

52‧‧‧連接管 52‧‧‧Connecting tube

53‧‧‧氣體噴頭 53‧‧‧ gas nozzle

60‧‧‧液體清潔裝置 60‧‧‧Liquid cleaning device

61‧‧‧流量控制器 61‧‧‧Flow controller

62‧‧‧連接管 62‧‧‧Connecting tube

63‧‧‧液滴噴頭 63‧‧‧Dropper nozzle

70‧‧‧吸取裝置 70‧‧‧ suction device

71‧‧‧真空幫浦 71‧‧‧vacuum pump

72‧‧‧連接管 72‧‧‧Connecting tube

73‧‧‧吸取頭 73‧‧‧Sucking head

C1‧‧‧內污染物 Contaminants in C1‧‧

C2‧‧‧外污染物 C2‧‧‧External pollutants

D1‧‧‧移動方向 D1‧‧‧ moving direction

D2‧‧‧延伸方向 D2‧‧‧ extending direction

D3‧‧‧調整方向 D3‧‧‧Adjustment direction

M1‧‧‧光罩 M1‧‧‧Photo Mask

M11‧‧‧基板 M11‧‧‧ substrate

M12‧‧‧圖案層 M12‧‧‧ pattern layer

M13‧‧‧表面 M13‧‧‧ surface

M14‧‧‧框架 M14‧‧‧Frame

M15‧‧‧保護膜 M15‧‧‧ protective film

M151、M152、M153、M154‧‧‧側邊 Sides of M151, M152, M153, M154‧‧

Claims (8)

一種光罩清潔設備,用以清潔一光罩,上述光罩包括一基板以及與上述基板相互間隔之一保護膜,且上述光罩清潔設備,包括:一超音波裝置,用以產生一超音波至上述保護膜,藉以使附著於上述保護膜之一內表面上之一內污染物掉落至上述基板,其中上述基板具有一圖案層,上述內表面朝向上述圖案層,且上述內污染物掉落至上述圖案層。 A reticle cleaning device for cleaning a reticle, the reticle comprising a substrate and a protective film spaced apart from the substrate, and the reticle cleaning device comprises: an ultrasonic device for generating an ultrasonic wave And the protective film, wherein the contaminant adhering to one of the inner surfaces of the protective film is dropped onto the substrate, wherein the substrate has a pattern layer, the inner surface faces the pattern layer, and the inner contaminant is removed Fall to the above pattern layer. 如申請專利範圍第1項所述之光罩清潔設備,更包括一靜電消除控制器,用以減少上述內污染物與上述保護膜之間的靜電。 The reticle cleaning device of claim 1, further comprising a static elimination controller for reducing static electricity between the internal pollutant and the protective film. 如申請專利範圍第1項所述之光罩清潔設備,更包括一噴氣裝置,用以產生一氣流至上述保護膜,其中藉由上述超音波使位於上述保護膜之一外表面之一外污染物於上述外表面產生振動,且藉由上述氣流將上述外污染物吹離上述保護膜。 The reticle cleaning apparatus of claim 1, further comprising a jet device for generating a gas flow to the protective film, wherein the outer surface of one of the protective films is contaminated by the ultrasonic wave The object generates vibration on the outer surface, and the outer contaminant is blown away from the protective film by the air flow. 如申請專利範圍第1項所述之光罩清潔設備,更包一液體清潔裝置,用以將一液滴滴於上述外表面。 The reticle cleaning device of claim 1, further comprising a liquid cleaning device for dropping a droplet onto the outer surface. 一種光罩清潔方法,包括:放置一光罩至一光罩清潔設備;產生一超音波至上述光罩之一保護膜,以使上述保護膜產生振動,並使上述保護膜之一內表面上之一內污染物掉落至上述光罩之一基板上,其中上述內表面朝向上述基板且 與上述基板相互間隔;以及移除上述保護膜並清除上述內污染物。 A reticle cleaning method comprising: placing a reticle to a reticle cleaning device; generating an ultrasonic wave to a protective film of the reticle to vibrate the protective film and making an inner surface of one of the protective films One of the contaminants is dropped onto one of the substrates of the reticle, wherein the inner surface faces the substrate and Intersecting from the substrate; and removing the protective film and removing the internal contaminants. 如申請專利範圍第5項所述之光罩清潔方法,更包括經由一靜電消除控制器減少上述內污染物與上述保護膜之間的靜電。 The reticle cleaning method of claim 5, further comprising reducing static electricity between the inner contaminant and the protective film via a static elimination controller. 如申請專利範圍第5項所述之光罩清潔方法,更包括安裝上述保護膜至上述基板上。 The reticle cleaning method of claim 5, further comprising installing the protective film onto the substrate. 一種光罩清潔方法,包括:放置一光罩至一光罩清潔設備;產生一超音波至上述光罩之一保護膜,以使上述保護膜之一內表面上之一內污染物掉落至上述光罩之一基板上,且振動上述保護膜之一外表面上之一外污染物,其中上述內表面朝向上述基板且與上述基板相互間隔;經由一靜電消除控制器減少上述內、外污染物與上述保護膜之間的靜電;產生一氣流至上述保護膜,以吹離上述外表面上之上述外污染物;傾斜上述光罩;以及將一液滴滴於上述外表面之一第一側邊,其中上述液滴經由上述第一側邊流至上述外表面之一第二側邊。 A reticle cleaning method comprising: placing a reticle to a reticle cleaning device; generating an ultrasonic wave to a protective film of the reticle to drop contaminants in one of the inner surfaces of the protective film to And shielding one of the outer surfaces of the protective film on the substrate, wherein the inner surface faces the substrate and is spaced apart from the substrate; and the inner and outer pollution is reduced through a static elimination controller Static electricity between the object and the protective film; generating a gas flow to the protective film to blow off the outer contaminant on the outer surface; tilting the photomask; and dropping a droplet onto the outer surface a side edge, wherein the liquid droplet flows to the second side of one of the outer surfaces via the first side edge.
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