TWI784121B - Processing method, etching device and laser processing device - Google Patents

Processing method, etching device and laser processing device Download PDF

Info

Publication number
TWI784121B
TWI784121B TW108102139A TW108102139A TWI784121B TW I784121 B TWI784121 B TW I784121B TW 108102139 A TW108102139 A TW 108102139A TW 108102139 A TW108102139 A TW 108102139A TW I784121 B TWI784121 B TW I784121B
Authority
TW
Taiwan
Prior art keywords
workpiece
etching
chamber
functional layer
silicon substrate
Prior art date
Application number
TW108102139A
Other languages
Chinese (zh)
Other versions
TW201932224A (en
Inventor
高橋宏行
Original Assignee
日商迪思科股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商迪思科股份有限公司 filed Critical 日商迪思科股份有限公司
Publication of TW201932224A publication Critical patent/TW201932224A/en
Application granted granted Critical
Publication of TWI784121B publication Critical patent/TWI784121B/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/03—Observing, e.g. monitoring, the workpiece
    • B23K26/032—Observing, e.g. monitoring, the workpiece using optical means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/0823—Devices involving rotation of the workpiece
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/083—Devices involving movement of the workpiece in at least one axial direction
    • B23K26/0853—Devices involving movement of the workpiece in at least in two axial directions, e.g. in a plane
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/14—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor
    • B23K26/142—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor for the removal of by-products
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/16—Removal of by-products, e.g. particles or vapours produced during treatment of a workpiece
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/18—Working by laser beam, e.g. welding, cutting or boring using absorbing layers on the workpiece, e.g. for marking or protecting purposes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/362—Laser etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/362—Laser etching
    • B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/70—Auxiliary operations or equipment
    • B23K26/702—Auxiliary equipment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Laser Beam Processing (AREA)
  • Drying Of Semiconductors (AREA)
  • Dicing (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

[課題]能夠去除產生在工件的加工痕。[解決手段]一種工件加工方法，該工件具有矽基板以及形成在該矽基板上的功能層，且該工件在設定於正面的多條交叉切割道所劃分的各區域中形成有包含該功能層的元件；該工件加工方法具備：雷射加工步驟，從工件之正面側沿著該切割道照射對功能層具有吸收性之波長的雷射光束以去除該功能層，並使該矽基板沿著該切割道露出；容納步驟，在該雷射加工步驟之後，將該工件容納於蝕刻腔室中；以及蝕刻步驟，在該容納步驟之後，將二氟化氙氣體供給至該工件的正面，並沿著該切割道蝕刻以去除已露出之矽基板的正面。[Problem] It is possible to remove machining marks on workpieces. [Solution] A workpiece processing method, the workpiece has a silicon substrate and a functional layer formed on the silicon substrate, and the workpiece includes the functional layer in each area divided by a plurality of cross cutting lines set on the front surface The workpiece processing method includes: a laser processing step, irradiating a laser beam with an absorbing wavelength to the functional layer from the front side of the workpiece along the cutting line to remove the functional layer, and making the silicon substrate along the The scribe line is exposed; a containing step of containing the workpiece in an etching chamber after the laser processing step; and an etching step of supplying xenon difluoride gas to the front surface of the workpiece after the containing step, and Etching along the scribe line removes the exposed front side of the silicon substrate.

Description

加工方法、蝕刻裝置以及雷射加工裝置Processing method, etching device and laser processing device

本發明是關於加工方法、蝕刻裝置以及雷射加工裝置。 The present invention relates to a processing method, an etching device and a laser processing device.

在配備有半導體元件之IC晶片等的元件晶片中，近年來，介電係數低的所謂Low-k材料被用作為元件中所使用的配線層間的層間絕緣膜等。當Low-k膜用於層間絕緣膜時，能夠降低形成於配線層間的寄生電容，且能夠提高元件晶片的處理能力等。作為Low-k膜，已知有SiOF、SiOB(硼矽酸鹽玻璃)等無機物類之膜，或聚醯亞胺類、對二甲苯類等聚合物膜即有機物類之膜。 In element wafers such as IC wafers equipped with semiconductor elements, in recent years, so-called Low-k materials having a low dielectric constant have been used as interlayer insulating films between wiring layers used in elements, and the like. When the Low-k film is used as an interlayer insulating film, the parasitic capacitance formed between wiring layers can be reduced, and the throughput of element wafers can be improved. Examples of Low-k films include inorganic films such as SiOF and SiOB (borosilicate glass), and organic films that are polymer films such as polyimides and p-xylenes.

元件晶片是例如藉由在圓板狀的矽基板之正面上層積配線層或層間絕緣膜等的功能層以形成元件，並沿著以劃分各元件之方式所設定的多條被稱作切割道的分割預定線將該矽基板分割所形成。矽基板的分割是例如藉由圓環狀的切割刀片沿著該切割道切割矽基板來執行。 Element wafers are formed by laminating functional layers such as wiring layers or interlayer insulating films on the front surface of a disc-shaped silicon substrate to form elements, and along a plurality of dicing lines that are set to divide each element The planned dividing line is formed by dividing the silicon substrate. The dicing of the silicon substrate is performed, for example, by cutting the silicon substrate along the dicing line with an annular dicing blade.

然而，由於Low-k膜是非常脆弱的膜，當藉由切割刀片切割形成有Low-k膜的矽基板時，會使得Low-k膜從矽基板剝離，且剝離直達元件而在該元件上產生損傷。於是，有一種通過藉由雷射光束照射的燒蝕加工部分地去除功能層，並沿著該切割道形成比功能層厚度要深的加工槽，其後，沿著該切割道由切割刀片進行切割的工件分割方法被提出(參閱專利文獻1)。 However, since the Low-k film is a very fragile film, when the silicon substrate formed with the Low-k film is cut by a dicing blade, the Low-k film will be peeled off from the silicon substrate, and the peeling will reach the device directly on the device. produce damage. Then, there is a method of partially removing the functional layer by ablation processing irradiated with a laser beam, and forming a processing groove deeper than the thickness of the functional layer along the scribe line, and thereafter, cutting along the scribe line by a dicing blade. A cutting workpiece segmentation method has been proposed (see Patent Document 1).

[習知技術文獻] [Prior art literature]

[專利文獻] [Patent Document]

[專利文獻1]日本特開2005-64230號公報 [Patent Document 1] Japanese Patent Laid-Open No. 2005-64230

然而，當通過燒蝕加工形成加工槽時，該加工槽的底部到達矽基板，會在露出的矽基板之正面產生微小的加工痕。因此，存在下述問題：加工痕殘留在分割矽基板所形成的元件晶片上，且由該加工痕造成元件晶片的抗折強度低下。 However, when the processing groove is formed by ablation processing, the bottom of the processing groove reaches the silicon substrate, and tiny processing marks will be generated on the exposed front surface of the silicon substrate. Therefore, there is a problem that processing marks remain on the element wafer formed by dividing the silicon substrate, and the bending strength of the element wafer is lowered due to the processing mark.

本發明是鑑於此問題而提出，其目的在於提供一種能夠去除產生在工件上的加工痕之加工方法、蝕刻裝置以及雷射加工裝置。 The present invention is made in view of this problem, and an object of the present invention is to provide a processing method, an etching device, and a laser processing device capable of removing processing marks generated on a workpiece.

根據本發明之一個形態，提供一種工件加工方法，該工件具有矽基板以及形成在該矽基板上的功能層，且該工件在設定於正面的多條交叉切割道所劃分的各區域中形成有包含該功能層的元件；該工件加工方法之特徵在於具備：雷射加工步驟，從工件之正面側沿著該切割道照射對功能層具有吸收性之波長的雷射光束以去除該功能層，並使該矽基板沿著該切割道露出；容納步驟，在該雷射加工步驟之後，將該工件容納於蝕刻腔室中；以及蝕刻步驟，在該容納步驟之後，將二氟化氙氣體供給至該工件的正面，並沿著該切割道蝕刻以去除已露出之矽基板的正面。 According to one aspect of the present invention, there is provided a method for processing a workpiece, the workpiece has a silicon substrate and a functional layer formed on the silicon substrate, and the workpiece is formed in each area divided by a plurality of crossing scribes set on the front surface. A component comprising the functional layer; the workpiece processing method is characterized in that it comprises: a laser processing step of irradiating a laser beam of a wavelength that is absorbing to the functional layer from the front side of the workpiece along the cut line to remove the functional layer, and exposing the silicon substrate along the scribe line; a containing step, after the laser processing step, containing the workpiece in an etching chamber; and an etching step, after the containing step, supplying xenon difluoride gas to the front side of the workpiece, and etch along the scribe line to remove the exposed front side of the silicon substrate.

較佳為，該功能層中包含有銅，且在該雷射加工步驟中，由於雷射光束的照射自該功能層產生包含銅之加工屑，並在該蝕刻步驟中，藉由該二氟化氙氣體使該加工屑所包含之該銅的表面氟化。 Preferably, the functional layer contains copper, and in the laser processing step, due to the irradiation of the laser beam, processing chips containing copper are generated from the functional layer, and in the etching step, by the difluorine The xenon oxide gas fluorinates the surface of the copper included in the machining chips.

此外，根據本發明之另一形態，提供一種蝕刻工件的蝕刻裝置，該工件具有矽基板以及形成在該矽基板上的功能層，且該工件在設定於正面的多條交叉切割道所劃分的各區域中形成有包含該功能層的元件，並被以對該功能層具有吸收性之波長的雷射光束照射，而沿著該切割道去除該功能層使該矽基板露出；該蝕刻裝置之特徵在於具備：蝕刻腔室，容納該工件；排氣單元，將該蝕刻腔室內的空氣排出；以及氣體供給單元，將二氟化氙氣體供給至該蝕刻腔室內。 In addition, according to another aspect of the present invention, there is provided an etching device for etching a workpiece, the workpiece has a silicon substrate and a functional layer formed on the silicon substrate, and the workpiece is divided by a plurality of cross scribe lines set on the front surface. The components containing the functional layer are formed in each region, and are irradiated with a laser beam of absorptive wavelength to the functional layer, and the functional layer is removed along the cutting line to expose the silicon substrate; the etching device It is characterized by comprising: an etching chamber for accommodating the workpiece; an exhaust unit for exhausting air in the etching chamber; and a gas supply unit for supplying xenon difluoride gas into the etching chamber.

根據本發明之又一個形態，提供一種對工件進行雷射加工之雷射加工裝置，該工件具有矽基板以及形成在該矽基板上的功能層，且該工件在設定於正面的多條交叉切割道所劃分的各區域中形成有包含該功能層的元件；該雷射加工裝置之特徵在於具備：卡盤台，其保持該工件；雷射光束照射單元，其將對該功能層具有吸收性之波長的雷射光束從被保持在該卡盤台上的工件之 正面側沿著該切割道照射，藉此去除該功能層，以沿著該切割道使矽基板露出；以及蝕刻單元，其將二氟化氙氣體供給至工件，並沿著該切割道蝕刻已露出之矽基板的正面。 According to still another aspect of the present invention, there is provided a laser processing device for performing laser processing on a workpiece, the workpiece has a silicon substrate and a functional layer formed on the silicon substrate, and the workpiece is cut in a plurality of cross cuts set on the front surface. A component comprising the functional layer is formed in each area divided by the road; the laser processing device is characterized in that it has: a chuck table, which holds the workpiece; a laser beam irradiation unit, which will have absorption properties for the functional layer. A laser beam with a wavelength of the front side is irradiated along the scribe line, thereby removing the functional layer to expose the silicon substrate along the scribe line; The exposed front side of the silicon substrate.

根據本發明的一個形態，雷射光束沿著切割道照射在形成有功能層之矽基板的正面上以去除該功能層。然後，將沿著該切割道已露出矽基板之工件容納至蝕刻腔室中，並提供二氟化氙氣體至工件。於是，蝕刻並去除包含已露出之矽基板的加工痕之正面。因此，藉由沿著切割道分割工件所形成的元件晶片上不會殘留加工痕，而元件晶片的強度增強。 According to one aspect of the present invention, the laser beam is irradiated along the cutting line on the front surface of the silicon substrate on which the functional layer is formed to remove the functional layer. Then, the workpiece with the silicon substrate exposed along the cutting line is accommodated in the etching chamber, and xenon difluoride gas is provided to the workpiece. Then, the front side including the process mark of the exposed silicon substrate is etched and removed. Therefore, no processing marks remain on the element wafer formed by dividing the workpiece along the dicing line, and the strength of the element wafer is enhanced.

用於工件蝕刻之二氟化氙氣體，在工件蝕刻時不需要電漿化。從而，實施蝕刻的蝕刻裝置不需要配備用於電漿化的構造，而能夠容易地將該蝕刻裝置配備於雷射加工裝置中。當使用配備有蝕刻裝置的雷射加工裝置時，能夠在實施雷射加工步驟後快速地實施蝕刻步驟。 The xenon difluoride gas used for workpiece etching does not require plasmaization during workpiece etching. Therefore, an etching device for performing etching does not need to be provided with a structure for plasma formation, and the etching device can be easily provided in a laser processing device. When a laser processing device equipped with an etching device is used, the etching step can be quickly performed after the laser processing step is performed.

從而，根據本發明，提供一種能夠去除產生在工件上的加工痕之加工方法、蝕刻裝置以及雷射加工裝置。 Therefore, according to the present invention, there are provided a processing method, an etching device, and a laser processing device capable of removing processing marks generated on a workpiece.

1:工件 1: Workpiece

1a:正面 1a: front

1b:背面 1b: back

1c:矽基板 1c: Silicon substrate

3:功能層 3: Functional layer

3a:加工槽 3a: Processing groove

5:切割道 5: Cutting Road

7:元件 7: Components

7a:TEG 7a:TEG

7b:加工屑 7b: Processing chips

9:膠膜 9: Film

11:框架 11: frame

13:框架單元 13:Frame unit

15:水溶性樹脂 15: Water-soluble resin

2:雷射加工裝置 2: Laser processing device

4:基台 4: Abutment

6:卡匣載置台 6: Cassette loading table

6a:卡匣 6a: Cassette

8:搬送裝置 8: Conveying device

8a:搬送軌道 8a: Transport track

10:卡盤台 10: Chuck table

10a:保持面 10a: Keep the surface

10b、38c:夾具 10b, 38c: fixture

12、22:移動機構 12, 22: mobile mechanism

14、24:導軌 14, 24: guide rail

16、26:移動板 16, 26: Mobile board

18、28:滾珠螺桿 18, 28: ball screw

20:脈衝馬達 20: Pulse motor

30:支撐部 30: support part

32:雷射加工單元 32:Laser processing unit

34:加工頭 34: processing head

34a:雷射光束 34a: Laser Beam

36:攝像單元 36: camera unit

38:保護膜塗佈兼清洗裝置 38: Protective film coating and cleaning device

38a:工作台 38a: Workbench

38b:噴嘴 38b: Nozzle

40:蝕刻裝置 40: Etching device

42:蝕刻腔室 42: Etching chamber

42a:腔室蓋 42a: chamber cover

42b:保持台 42b: holding table

42c:片構件 42c: sheet component

42b:氣體分散構件 42b: Gas dispersion member

44:排氣單元 44: exhaust unit

44b:排氣通道 44b: exhaust channel

46:氣體供給單元 46: Gas supply unit

46a、46c:氣體供給源 46a, 46c: gas supply source

46b:供氣通道 46b: Air supply channel

46d:氣體 46d: gas

48:附觸控面板之顯示器 48: Display with touch panel

圖1是示意性顯示工件的立體圖。 FIG. 1 is a perspective view schematically showing a workpiece.

圖2是示意性顯示雷射加工裝置的側視圖。 Fig. 2 is a side view schematically showing the laser processing device.

圖3(A)是示意性顯示在工件上塗佈水溶性的液狀樹脂之狀態的剖面圖，圖3(B)是示意性顯示雷射加工步驟的剖面圖。 3(A) is a cross-sectional view schematically showing a state where a water-soluble liquid resin is coated on a workpiece, and FIG. 3(B) is a cross-sectional view schematically showing a laser processing step.

圖4(A)是放大並示意性顯示雷射光束照射之工件的剖面圖，圖4(B)是放大並示意性顯示雷射加工步驟後之工件的剖面圖。 4(A) is an enlarged and schematic cross-sectional view of a workpiece irradiated by a laser beam, and FIG. 4(B) is an enlarged and schematic cross-sectional view of a workpiece after a laser processing step.

圖5(A)是示意性顯示容納步驟的剖面圖，圖5(B)是示意性顯示蝕刻腔室之排氣狀態的剖面圖。 5(A) is a cross-sectional view schematically showing a housing step, and FIG. 5(B) is a cross-sectional view schematically showing an exhaust state of an etching chamber.

圖6(A)是示意性顯示蝕刻步驟的剖面圖，圖6(B)是示意性顯示蝕刻腔室之排氣狀態的剖面圖。 6(A) is a cross-sectional view schematically showing an etching step, and FIG. 6(B) is a cross-sectional view schematically showing an exhaust state of an etching chamber.

圖7(A)是放大並示意性顯示實施蝕刻步驟時之工件的剖面圖，圖7(B)是放大並示意性顯示蝕刻步驟後之工件的剖面圖。 7(A) is an enlarged and schematic cross-sectional view of the workpiece when the etching step is performed, and FIG. 7(B) is an enlarged and schematic cross-sectional view of the workpiece after the etching step.

圖8(A)是示意性顯示從蝕刻腔室取出工件之狀態的剖面圖，圖8(B)是示意性顯示蝕刻裝置之一例的剖面圖。 8(A) is a cross-sectional view schematically showing a state in which a workpiece is taken out of an etching chamber, and FIG. 8(B) is a cross-sectional view schematically showing an example of an etching apparatus.

圖9(A)是示意性顯示工件之清洗的剖面圖，圖9(B)是放大並示意性顯示清洗後之工件的剖面圖。 FIG. 9(A) is a cross-sectional view schematically showing the cleaning of the workpiece, and FIG. 9(B) is an enlarged and schematic cross-sectional view showing the cleaned workpiece.

首先，說明關於本實施方式的加工方法之工件。圖1是示意性顯示工件1的立體圖。工件1包含矽基板1c，以及形成於該矽基板1c上的功能層3。在工件1之正面1a上，設定有交叉的多條被稱作切割道5之分割預定線，藉由該切割道5所劃分之各區域中形成有IC(Integrated Circuit，積體電路)等的元件7。最後，藉由工件1被沿著切割道5分割，形成為各個元件晶片。 First, a workpiece related to the machining method of this embodiment will be described. FIG. 1 is a perspective view schematically showing a workpiece 1 . The workpiece 1 includes a silicon substrate 1c, and a functional layer 3 formed on the silicon substrate 1c. On the front surface 1a of the workpiece 1, a plurality of intersecting dividing lines called scribe lines 5 are set, and IC (Integrated Circuit, integrated circuit) etc. are formed in each area divided by the scribe lines 5. Element 7. Finally, the workpiece 1 is divided along the dicing line 5 to form individual element wafers.

在工件1的背面上，黏貼有被擴張在金屬製的框架11上的膠膜9。工件1在與膠膜9和框架11成為一體之框架單元13的狀態下被搬送並加工。在工件1被分割並形成為各個元件晶片時，該元件晶片是由於通過膠膜9的支撐而不會飛濺。 An adhesive film 9 expanded on a metal frame 11 is attached to the back surface of the workpiece 1 . The workpiece 1 is conveyed and processed in the state of the frame unit 13 integrated with the adhesive film 9 and the frame 11 . When the workpiece 1 is divided and formed into individual element wafers, the element wafers are supported by the glue film 9 so as not to splash.

膠膜9具有：具有可撓性之薄膜狀的基板，以及形成在該基板之一邊的面上的漿糊層(接著劑層)。例如，PO(Polyolefin，聚烯烴)可用作基材。也可以使用較PO剛性高的PET(Polyethylene terephthalate，聚對苯二甲酸乙二酯)、聚氯乙烯(Polyvinylchloride)、聚苯乙烯(Polystyrene)等。此外，在漿糊層(接著劑層)中，可使用例如矽橡膠、丙烯酸系材料、環氧樹脂系材料等。 The adhesive film 9 has a flexible film-like substrate, and a paste layer (adhesive layer) formed on one side of the substrate. For example, PO (Polyolefin) can be used as the substrate. PET (Polyethylene terephthalate, polyethylene terephthalate), polyvinylchloride (Polyvinylchloride), polystyrene (Polystyrene), etc., which are more rigid than PO, can also be used. In addition, for the paste layer (adhesive layer), for example, silicone rubber, acrylic material, epoxy resin material, etc. can be used.

元件7具有包含多層的配線層以及絕緣各配線層之間的層間絕緣膜之功能層3。近年來，為了降低形成在配線層間的寄生電容，低介電係數之所謂的Low-k膜被使用在層間絕緣膜等中。作為Low-k膜，已知有SiOF、SiOB(硼矽酸鹽玻璃)等無機物類之膜或聚醯亞胺類、對二甲苯類等聚合物膜即有機物類之膜。 The element 7 has a multilayer wiring layer and a functional layer 3 that insulates the interlayer insulating film between the wiring layers. In recent years, in order to reduce the parasitic capacitance formed between wiring layers, a so-called Low-k film having a low dielectric constant is used as an interlayer insulating film or the like. Examples of Low-k films include inorganic films such as SiOF and SiOB (borosilicate glass), polymer films such as polyimides and p-xylene, or organic films.

由於Low-k膜是非常脆弱的膜，當藉由切割刀片切割在正面形成有包含Low-k膜之功能層3的矽基板1c時，會使得Low-k膜從矽基板1c剝離，且剝離直達元件7而在該元件7上產生損傷。於是，在以切割刀片切割工件1之前，會藉由預先雷射加工(燒蝕加工)沿著切割道5去除功能層3。 Because the Low-k film is a very fragile film, when the silicon substrate 1c formed with the functional layer 3 comprising the Low-k film on the front side is cut by a dicing blade, the Low-k film will be peeled off from the silicon substrate 1c, and the directly to the element 7 to cause damage to the element 7 . Thus, before cutting the workpiece 1 with the cutting blade, the functional layer 3 is removed along the cutting line 5 by pre-laser processing (ablation processing).

然而，若實施雷射加工，則矽基板1c會露出並在正面產生微小的加工痕。因此，存在下述問題：分割矽基板1c所形成的元件晶片上會殘留加工痕，且元件晶片的抗折強度降低。 However, if laser processing is performed, the silicon substrate 1c will be exposed and micro processing marks will be generated on the front surface. Therefore, there is a problem that processing marks remain on the element wafer formed by dividing the silicon substrate 1c, and the bending strength of the element wafer decreases.

此外，近年來，包含元件7的半導體元件之高度積體化趨勢顯著，為了使該元件7的消耗電力減少或使訊號的傳輸速度提升，在配線層中使用低阻抗的銅。 In addition, in recent years, semiconductor elements including the element 7 have become more and more integrated. In order to reduce the power consumption of the element 7 or increase the signal transmission speed, low-impedance copper is used in the wiring layer.

在工件1中形成有用於元件7的檢查等之被稱作TEG(Test Element Group，測試元件群)的測試用電路，且該TEG中也使用包含銅的配線層。TEG有時僅使用在工件1的分割之前，在此情況下，由於即使是形成在因工件1的分割而會失去的區域中也沒有問題，所以例如形成在與切割道5重疊的區域中。因此，在藉由雷射加工沿著切割道5形成加工槽時，也對包含銅的TEG實施雷射加工。 A test circuit called a TEG (Test Element Group) for inspection of the element 7 and the like is formed in the workpiece 1 , and a wiring layer containing copper is also used in the TEG. The TEG is sometimes used only before the division of the workpiece 1. In this case, there is no problem even if it is formed in a region that would be lost due to division of the workpiece 1. Therefore, it is formed in a region overlapping with the scribe line 5, for example. Therefore, when forming processing grooves along the scribe lines 5 by laser processing, laser processing is also performed on the TEG containing copper.

當對包含銅的TEG進行雷射加工時，會產生包含銅的加工屑(碎片)，並且一部分的該加工屑會殘留在因加工而沿著切割道5露出之矽基板1c上。由於該加工屑所包含的銅會逐漸地與空氣中的水分反應，當加工屑巨大化且到達元件7的形成區域的情況下，會成為一個問題。 When laser processing is performed on the TEG containing copper, processing chips (fragments) containing copper are generated, and a part of the processing chips remains on the silicon substrate 1c exposed along the scribe line 5 by processing. Since the copper contained in the machining shavings gradually reacts with moisture in the air, it becomes a problem when the machining shavings grow in size and reach the region where the element 7 is formed.

於是，在本實施方式的工件加工方法中，在實施雷射加工後，蝕刻矽基板1c所露出的正面，並且使加工屑所包含的銅之反應性降低。圖2是示意性顯示實施該工件1的加工方法之雷射加工裝置2的立體圖。使用圖2說明關於該雷射加工裝置2之構成。 Then, in the workpiece processing method of this embodiment, after laser processing is performed, the exposed front surface of the silicon substrate 1c is etched, and the reactivity of copper contained in the processing chips is reduced. FIG. 2 is a perspective view schematically showing a laser processing device 2 for implementing the processing method of the workpiece 1 . The structure of this laser processing apparatus 2 is demonstrated using FIG. 2. FIG.

雷射加工裝置2具備吸引保持框架單元13狀態的工件1之卡盤台10，以及配設在該卡盤台10上方的雷射加工單元32。 The laser processing device 2 includes a chuck table 10 for sucking and holding a workpiece 1 in a state of a frame unit 13 , and a laser processing unit 32 arranged above the chuck table 10 .

雷射加工裝置2具備配設在基台4上表面的前角部之卡匣載置台6。在卡匣載置台6上載置有容納多個工件1的卡匣6a。此外，雷射加工裝置2具備用於將框架單元13狀態的工件1搬送至基台4上方的搬送裝置8，以及搬送軌道8a。 The laser processing apparatus 2 is provided with the cassette mounting table 6 arrange|positioned at the front corner part of the upper surface of the base 4. As shown in FIG. A cassette 6 a for accommodating a plurality of workpieces 1 is placed on the cassette mounting table 6 . Moreover, the laser processing apparatus 2 is provided with the conveyance device 8 for conveying the workpiece|work 1 in the state of the frame unit 13 to above the base 4, and the conveyance rail 8a.

在雷射加工裝置2之基台4的上表面，配設有具備Y軸導軌14、Y軸移動板16、Y軸滾珠螺桿18以及Y軸脈衝馬達20的Y軸移動機構(分度 進給機構)12。在基台4的上表面設置有在Y軸方向上平行的一對Y軸導軌14，且Y軸移動板16可滑動地安裝在Y軸導軌14上。 On the upper surface of the base 4 of the laser processing device 2, a Y-axis moving mechanism (indexing mechanism) equipped with a Y-axis guide rail 14, a Y-axis moving plate 16, a Y-axis ball screw 18, and a Y-axis pulse motor 20 is arranged. Feed mechanism) 12. A pair of Y-axis guide rails 14 parallel to the Y-axis direction is provided on the upper surface of the base 4 , and a Y-axis moving plate 16 is slidably mounted on the Y-axis guide rails 14 .

在Y軸移動板16的下表面側設置有螺帽部(未圖示)，在此螺帽部上，螺合有平行於Y軸導軌14的Y軸滾珠螺桿18。在Y軸滾珠螺桿18的一端上連結有Y軸脈衝馬達20。當藉由Y軸脈衝馬達20使Y軸滾珠螺桿18旋轉時，Y軸移動板16沿著Y軸導軌14在Y軸方向上移動。 A nut portion (not shown) is provided on the lower surface side of the Y-axis moving plate 16 , and a Y-axis ball screw 18 parallel to the Y-axis guide rail 14 is screwed to the nut portion. A Y-axis pulse motor 20 is connected to one end of the Y-axis ball screw 18 . When the Y-axis ball screw 18 is rotated by the Y-axis pulse motor 20 , the Y-axis moving plate 16 moves in the Y-axis direction along the Y-axis guide rail 14 .

在Y軸移動板16的上表面，配設有具備X軸導軌24、X軸移動板26、X軸滾珠螺桿28以及X軸脈衝馬達(未圖示)的X軸移動機構(加工進給機構)22。在Y軸移動板16的上表面設置有在X軸方向上平行的一對X軸導軌24，且X軸移動板26可滑動地安裝在X軸導軌24上。 On the upper surface of the Y-axis moving plate 16, an X-axis moving mechanism (processing feed mechanism) equipped with an X-axis guide rail 24, an X-axis moving plate 26, an X-axis ball screw 28 and an X-axis pulse motor (not shown) is arranged. )twenty two. A pair of X-axis guide rails 24 parallel to the X-axis direction is provided on the upper surface of the Y-axis moving plate 16 , and the X-axis moving plate 26 is slidably mounted on the X-axis guide rails 24 .

在X軸移動板26的下表面側設置有螺帽部(未圖示)，在此螺帽部上，螺合有平行於X軸導軌24的X軸滾珠螺桿28。在X軸滾珠螺桿28的一端上連結有X軸脈衝馬達。當藉由X軸脈衝馬達使X軸滾珠螺桿28旋轉時，X軸移動板26沿著X軸導軌24在X軸方向上移動。 A nut portion (not shown) is provided on the lower surface side of the X-axis moving plate 26 , and an X-axis ball screw 28 parallel to the X-axis guide rail 24 is screwed to the nut portion. An X-axis pulse motor is connected to one end of the X-axis ball screw 28 . When the X-axis ball screw 28 is rotated by the X-axis pulse motor, the X-axis moving plate 26 moves in the X-axis direction along the X-axis guide rail 24 .

在X軸移動板26之上，配設有卡盤台10。卡盤台10在上表面側具有多孔質構件(未圖示)。多孔質構件的上表面成為保持工件1的保持面10a。卡盤台10可繞垂直於保持面10a的軸旋轉。 The chuck table 10 is disposed on the X-axis moving plate 26 . The chuck table 10 has a porous member (not shown) on the upper surface side. The upper surface of the porous member serves as a holding surface 10 a for holding the workpiece 1 . The chuck table 10 is rotatable about an axis perpendicular to the holding surface 10a.

卡盤台10具有連接至多孔質構件的吸引源(未圖示)。工件1透過膠膜9被載置於保持面10a上，當通過多孔質構件的孔使吸引源所產生的負壓對工件1作用時，工件1會被吸引保持在卡盤台10上。此外，在卡盤台10的周圍，具備固定構成框架單元13的框架11之夾具10b。 The chuck table 10 has a suction source (not shown) connected to the porous member. The workpiece 1 is placed on the holding surface 10 a through the adhesive film 9 , and when the negative pressure generated by the suction source acts on the workpiece 1 through the holes of the porous member, the workpiece 1 is attracted and held on the chuck table 10 . Moreover, around the chuck table 10, a jig 10b for fixing the frame 11 constituting the frame unit 13 is provided.

在雷射加工裝置2的基台4上表面之後部，配設有支撐雷射加工單元32的支撐部30。配設於支撐部30上部的雷射加工單元32具備：配設於卡盤台10上方的加工頭34，以及配設於鄰接該加工頭34之位置的攝像單元36。 On the rear portion of the upper surface of the base 4 of the laser processing device 2 , a support portion 30 for supporting a laser processing unit 32 is disposed. The laser processing unit 32 disposed on the upper portion of the support portion 30 includes a processing head 34 disposed above the chuck table 10 , and an imaging unit 36 disposed adjacent to the processing head 34 .

雷射加工單元32進行對形成在工件1上的功能層3具有吸收性之波長的雷射光束之脈衝振盪，並具有將該雷射光束聚光在保持於卡盤台10之工件1上的功能。攝像單元36具有拍攝保持於卡盤台10之工件1的功能。當使用攝像單元36時，能夠實施調整工件1相對加工頭34的位置之對準，以便能夠沿著工件1的切割道5進行雷射加工(燒蝕加工)。 The laser processing unit 32 performs pulse oscillation of a laser beam having an absorbing wavelength to the functional layer 3 formed on the workpiece 1, and has a function of focusing the laser beam on the workpiece 1 held on the chuck table 10. Function. The imaging unit 36 has a function of imaging the workpiece 1 held on the chuck table 10 . When the imaging unit 36 is used, alignment of the position of the workpiece 1 relative to the processing head 34 can be adjusted so that laser processing (ablation processing) can be performed along the cutting line 5 of the workpiece 1 .

作為由雷射加工單元32照射工件1的雷射光束，可使用例如以Nd：YAG等作為媒介振盪的波長355m之雷射光束。在工件1的雷射加工時，雷射光束以例如脈衝寬度40ns以下、頻率100kHz、輸出20W以下的條件振盪。在加工時，以工件1的加工進給速度700mm/s~1000mm/s、各切割道5中照射次數3~4次的條件對工件1照射該雷射光束。 As the laser beam irradiated on the workpiece 1 by the laser processing unit 32 , for example, a laser beam with a wavelength of 355 m oscillating through Nd:YAG or the like can be used. During laser processing of the workpiece 1 , the laser beam oscillates under the conditions of, for example, a pulse width of 40 ns or less, a frequency of 100 kHz, and an output of 20 W or less. During processing, the workpiece 1 is irradiated with the laser beam under the conditions that the processing feed rate of the workpiece 1 is 700mm/s~1000mm/s, and the number of times of irradiation in each cutting line 5 is 3~4 times.

雷射加工裝置2在鄰接基台4上表面的卡匣載置台6之位置上具備保護膜塗佈兼清洗裝置38。保護膜塗佈兼清洗裝置38具有在加工前的工件1上表面塗佈水溶性的液狀樹脂以形成保護膜的功能，以及清洗加工後之工件1的功能。保護膜塗佈兼清洗裝置38具備放置工件1的工作台38a，以及將流體噴射至載置於工作台38a上的工件1之噴嘴38b。 The laser processing device 2 includes a protective film coating and cleaning device 38 at a position adjacent to the cassette mounting table 6 on the upper surface of the base 4 . The protective film coating and cleaning device 38 has the function of coating a water-soluble liquid resin on the upper surface of the workpiece 1 before processing to form a protective film, and the function of cleaning the workpiece 1 after processing. The protective film coating and cleaning device 38 includes a table 38a on which the workpiece 1 is placed, and a nozzle 38b that sprays a fluid onto the workpiece 1 placed on the table 38a.

工作台38a能夠繞沿著垂直於工件1載置面的方向之軸旋轉。噴嘴38b具有在工作台38a的外側於Z軸方向(垂直方向)上延伸的軸部，從軸部的上部向垂直於該Z軸方向的水平方向上延伸的本體，以及配設於該本體的前端朝向Z軸方向下方的排出口。該排出口藉由該軸部旋轉而能夠在工作台38a的上方於水平方向上移動。 The table 38a is rotatable about an axis along a direction perpendicular to the mounting surface of the workpiece 1 . The nozzle 38b has a shaft portion extending in the Z-axis direction (vertical direction) outside the table 38a, a body extending from the upper portion of the shaft portion in a horizontal direction perpendicular to the Z-axis direction, and a body provided on the body. The discharge port whose tip faces downward in the Z-axis direction. The discharge port can move in the horizontal direction above the table 38a by rotating the shaft.

噴嘴38b形成為管線狀，將從連接於該軸部下部的供給源供給之液體送到該排出口，並能夠從排出口將該液體排出至保持在工作台38a上的工件1。噴嘴38b將例如作為保護工件1的正面1a之保護膜材料的水溶性液狀樹脂，或清洗該正面1a的清洗液排出至工件1。再者，噴嘴38b也可以排出液體與氣體的混合流體至工件1。 The nozzle 38b is formed in the shape of a pipeline, sends liquid supplied from a supply source connected to the lower portion of the shaft to the discharge port, and discharges the liquid from the discharge port to the workpiece 1 held on the table 38a. The nozzle 38 b discharges, for example, a water-soluble liquid resin as a protective film material for protecting the front surface 1 a of the workpiece 1 or a cleaning liquid for cleaning the front surface 1 a to the workpiece 1 . Furthermore, the nozzle 38 b can also discharge the mixed fluid of liquid and gas to the workpiece 1 .

當由雷射加工單元32沿著切割道5對工件1進行雷射加工(燒蝕加工)時，從由雷射加工去除的部分產生被稱作碎片的加工屑，並飛濺於工件1上而附著在正面1a。一旦附著到正面1a上的碎片，即使清洗工件1，要完全去除也是不容易的。 When the workpiece 1 is laser processed (ablation processed) by the laser processing unit 32 along the cutting line 5, processing chips called chips are generated from the part removed by the laser processing, and are splashed on the workpiece 1 and Attached to front 1a. Once the debris adhered to the front surface 1a, it is not easy to completely remove it even if the workpiece 1 is washed.

於是，在實施工件1的雷射加工前藉由保護膜塗佈兼清洗裝置38供給水溶性的液狀樹脂到正面1a，以形成作為保護膜功能的水溶性樹脂膜。如此一來，即使碎片飛濺於工件1的正面1a上，除了由雷射加工所形成的加工槽，該碎片由於附著在水溶性樹脂膜上而不會附著在該正面1a上。 Then, before the laser processing of the workpiece 1 is performed, a water-soluble liquid resin is supplied to the front surface 1 a by the protective film coating and cleaning device 38 to form a water-soluble resin film functioning as a protective film. In this way, even if debris splashes on the front surface 1a of the workpiece 1, the debris does not adhere to the surface 1a because it adheres to the water-soluble resin film, except for the processing grooves formed by laser processing.

在雷射加工實施後，清洗液藉由保護膜塗佈兼清洗裝置38被供給至工件1的正面上，雖是清洗工件1的正面側，此時，碎片藉由清洗液會與該水溶性樹脂膜一起被去除。 After the laser processing is implemented, the cleaning solution is supplied to the front of the workpiece 1 by the protective film coating and cleaning device 38. Although the front side of the workpiece 1 is cleaned, at this time, the debris will be mixed with the water-soluble material by the cleaning solution. The resin film is removed together.

此外，在雷射加工裝置2的基台4上之鄰接該保護膜塗佈兼清洗裝置38的位置上，配設有蝕刻裝置40。蝕刻裝置40具備蝕刻腔室42，在蝕刻工件1時，工件1被搬入蝕刻腔室42中。蝕刻裝置40進一步具備，用於將蝕刻腔室42的內部排氣之排氣單元44，以及從氣體供給源46a將二氟化氙氣體供給至蝕刻腔室42的氣體供給單元46。 In addition, an etching device 40 is disposed on the base 4 of the laser processing device 2 at a position adjacent to the protective film coating and cleaning device 38 . The etching device 40 includes an etching chamber 42 , and the workpiece 1 is carried into the etching chamber 42 when the workpiece 1 is etched. The etching apparatus 40 further includes an exhaust unit 44 for exhausting the inside of the etching chamber 42 , and a gas supply unit 46 for supplying xenon difluoride gas to the etching chamber 42 from a gas supply source 46 a.

在雷射加工裝置2的基台4之前部，配設有兼作顯示裝置及輸入裝置的附觸控面板之顯示器48。該附觸控面板之顯示器48顯示雷射加工裝置2的狀態，或加工狀況、加工條件等各種資訊。此外，雷射加工裝置2的使用者或者管理者等，藉由該附觸控面板之顯示器48對雷射加工裝置2輸入各種指示等。 On the front part of the base 4 of the laser processing device 2, a display 48 with a touch panel serving as a display device and an input device is arranged. The display 48 with a touch panel displays the state of the laser processing device 2, or various information such as processing status and processing conditions. In addition, the user or manager of the laser processing device 2 inputs various instructions and the like to the laser processing device 2 through the display 48 with a touch panel.

接著，詳細說明關於本實施方式之工件1的加工方法之各步驟。首先，實施在工件1的正面1a上形成作為保護膜功能的水溶性樹脂膜之保護膜形成步驟。使用搬送軌道8a及搬送裝置8等，將框架單元13狀態的工件1從放在卡匣載置台6的卡匣6a搬送到保護膜塗佈兼清洗裝置38的工作台38a上。 Next, each step of the machining method of the workpiece 1 according to the present embodiment will be described in detail. First, a protective film forming step of forming a water-soluble resin film functioning as a protective film on the front surface 1a of the workpiece 1 is carried out. The workpiece 1 in the state of the frame unit 13 is transferred from the cassette 6 a placed on the cassette loading table 6 to the table 38 a of the protective film coating and cleaning device 38 using the transfer rail 8 a and the transfer device 8 .

接著，將噴嘴38b的排出口定位在工作台38a中央附近的上方，並一邊使工作台38a旋轉一邊從該排出口使水溶性的液狀樹脂排出至工件1的正面1a上。亦即，藉由旋轉塗佈法將該液狀樹脂塗佈至工件1的正面1a。 Next, the discharge port of the nozzle 38b is positioned above the center of the table 38a, and the water-soluble liquid resin is discharged from the discharge port onto the front surface 1a of the workpiece 1 while the table 38a is rotated. That is, the liquid resin is applied to the front surface 1a of the workpiece 1 by a spin coating method.

圖3(A)是示意性顯示在工件上塗佈水溶性液狀樹脂之狀態的剖面圖。如圖3(A)所示，當將該液狀樹脂塗佈至工件1的正面1a時，形成作為保護膜功能的水溶性樹脂膜15。另外，如圖3(A)所示，工作台38a也可以具備把持框架單元13之框架11的夾具38c。 Fig. 3(A) is a cross-sectional view schematically showing a state in which a water-soluble liquid resin is coated on a workpiece. As shown in FIG. 3(A), when this liquid resin is applied to the front surface 1a of the workpiece 1, a water-soluble resin film 15 functioning as a protective film is formed. In addition, as shown in FIG. 3(A) , the table 38a may include a jig 38c for holding the frame 11 of the frame unit 13 .

接著，實施沿著工件1的切割道5照射雷射光束以去除功能層3(參閱圖1)之雷射加工步驟。雷射加工步驟是藉由雷射加工單元32所實施。首先，藉由搬送裝置8使工件1移動至卡盤台10的保持面10a上。然後，以夾具10b把持框架11，並且透過膠膜9使卡盤台10吸引保持工件1。 Next, a laser processing step of irradiating a laser beam along the cutting line 5 of the workpiece 1 to remove the functional layer 3 (see FIG. 1 ) is implemented. The laser processing step is implemented by the laser processing unit 32 . First, the workpiece 1 is moved onto the holding surface 10 a of the chuck table 10 by the transfer device 8 . Then, the frame 11 is held by the jig 10b, and the workpiece 1 is sucked and held by the chuck table 10 through the glue film 9 .

接著，藉由攝像單元36拍攝工件1，檢測工件1的切割道5，以能夠沿著切割道5對工件1進行雷射加工的方式使卡盤台10移動及旋轉，並實施對準。圖3(B)是示意性顯示雷射加工步驟的剖面圖。如圖3(B)所示，一邊加工進給工件1，一邊將脈衝振盪之雷射光束34a從加工頭34照射至工件1的正面。 Next, the workpiece 1 is photographed by the imaging unit 36 , the cutting line 5 of the workpiece 1 is detected, and the chuck table 10 is moved and rotated in such a manner that laser processing can be performed on the workpiece 1 along the cutting line 5 , and alignment is performed. FIG. 3(B) is a cross-sectional view schematically showing a laser processing step. As shown in FIG. 3(B), while the workpiece 1 is being processed and fed, the pulsed laser beam 34 a is irradiated from the processing head 34 to the front surface of the workpiece 1 .

當雷射光束34a沿著切割道5照射時，會沿著切割道5(參閱圖1)去除功能層3(參閱圖1)。在沿著一條切割道5實施雷射加工後，分度進給工件1，並沿著其他切割道5同樣地一個接一個實施雷射加工。在沿著平行並排於一個方向的切割道5實施雷射加工後，使卡盤台10繞垂直於保持面10a的軸旋轉，並沿著並排於其他方向的切割道5同樣地實施雷射加工。 When the laser beam 34 a is irradiated along the cutting line 5 , the functional layer 3 (see FIG. 1 ) will be removed along the cutting line 5 (see FIG. 1 ). After performing laser processing along one cutting line 5 , the workpiece 1 is index-feeded, and laser processing is performed one by one along the other cutting lines 5 in the same manner. After performing laser processing along the slits 5 parallel to one direction, the chuck table 10 is rotated around an axis perpendicular to the holding surface 10a, and laser processing is similarly performed along the slits 5 parallel to the other direction. .

圖4(A)是放大並示意性顯示雷射光束34a照射之工件1的剖面圖。在雷射光束34a所照射的區域中形成有TEG7a。圖4(B)是放大並示意性顯示雷射加工步驟後之工件1的剖面圖。 FIG. 4(A) is an enlarged and schematic cross-sectional view of the workpiece 1 irradiated with the laser beam 34a. A TEG 7a is formed in a region irradiated with the laser beam 34a. FIG. 4(B) is an enlarged and schematic cross-sectional view of the workpiece 1 after the laser processing step.

如圖4(B)所示，當對工件1進行雷射加工並去除功能層3時，形成加工槽3a並且矽基板1c會露出在該加工槽3a的底部。此時，露出在加工槽3a之底部的矽基板1c的正面上形成有微小的加工痕(未圖示)。又，當實施雷射加工時，雖然作為工件1的熔融物之加工屑7b(碎片)飛濺於工件1的正面，但在該加工屑7b中也包含來自TEG7a的銅。 As shown in FIG. 4(B), when laser processing is performed on the workpiece 1 and the functional layer 3 is removed, a processing groove 3a is formed and the silicon substrate 1c is exposed at the bottom of the processing groove 3a. At this time, minute processing marks (not shown) are formed on the front surface of the silicon substrate 1c exposed at the bottom of the processing groove 3a. In addition, when laser processing is performed, processing chips 7b (fragments) which are molten materials of the workpiece 1 are splashed on the front surface of the workpiece 1, but the processing chips 7b also contain copper derived from the TEG 7a.

在本實施方式之工件1的加工方法中，將二氟化氙氣體供給至工件1的正面以蝕刻露出在加工槽3a之矽基板1c的正面，並且將包含於加工屑7b的銅氟化以抑制加工屑7b的巨大化。由於蝕刻步驟是以蝕刻裝置40實施，在此之前，會實施將工件1容納至蝕刻裝置40之容納步驟。 In the processing method of the workpiece 1 of the present embodiment, xenon difluoride gas is supplied to the front surface of the workpiece 1 to etch the front surface of the silicon substrate 1c exposed in the processing tank 3a, and the copper contained in the processing chips 7b is fluorinated to Enlargement of the machining waste 7b is suppressed. Since the etching step is performed by the etching device 40 , prior to this, the accommodating step of accommodating the workpiece 1 in the etching device 40 will be performed.

在容納步驟中，藉由搬送裝置8等將該工件1搬送，並容納至蝕刻裝置40的蝕刻腔室42中。圖5(A)是示意性顯示容納步驟的剖面圖。在此，使用圖5(A)詳細說明關於蝕刻裝置40的構成。如圖5(A)所示，蝕刻裝置40具備在下方具有開口之大致凹狀的腔室蓋42a，以及配設於該腔室蓋42a下方的保持台42b。 In the housing step, the workpiece 1 is transported by the transport device 8 and the like, and stored in the etching chamber 42 of the etching device 40 . Fig. 5(A) is a cross-sectional view schematically showing a housing step. Here, the configuration of the etching device 40 will be described in detail using FIG. 5(A) . As shown in FIG. 5(A) , the etching apparatus 40 includes a substantially concave chamber cover 42a having an opening below, and a holding table 42b disposed below the chamber cover 42a.

保持台42b具備例如載置面，該載置面的直徑比被搬入蝕刻裝置40之框架單元13的直徑大，框架單元13狀態的工件1被放置在該載置面上。 此外，例如，腔室蓋42a之該開口的直徑比工件1的直徑大，且腔室蓋42a的外徑比框架11的內徑小。在圍繞腔室蓋42a之該開口的下表面，安裝有例如以彈性構件形成的O環形等之環狀的密封件42c。 The holding table 42 b has, for example, a placement surface whose diameter is larger than that of the frame unit 13 carried into the etching apparatus 40 , and the workpiece 1 in the state of the frame unit 13 is placed on the placement surface. Furthermore, for example, the diameter of the opening of the chamber cover 42 a is larger than the diameter of the workpiece 1 , and the outer diameter of the chamber cover 42 a is smaller than the inner diameter of the frame 11 . On the lower surface surrounding the opening of the chamber cover 42a, an annular seal 42c such as an O-ring formed of an elastic member is attached.

在將工件1容納至蝕刻腔室時，以框架單元13的中心重疊於保持台42b的中心及腔室蓋42a的中心之方式，將工件1載置於保持台42b上。然後，使腔室蓋42a下降。於是，該環狀的密封件42c接觸並密接於構成框架單元13的膠膜9，並形成被腔室蓋42a及保持台42b包圍而密封之區域。此區域成為蝕刻腔室42。 When storing the workpiece 1 in the etching chamber, the workpiece 1 is placed on the holding table 42b such that the center of the frame unit 13 overlaps the center of the holding table 42b and the center of the chamber cover 42a. Then, the chamber cover 42a is lowered. Then, the ring-shaped sealing member 42c contacts and adheres closely to the adhesive film 9 constituting the frame unit 13, and forms a sealed area surrounded by the chamber cover 42a and the holding table 42b. This area becomes the etch chamber 42 .

在成為蝕刻腔室42之天花板的腔室蓋42a之上部，形成有一端連接至排氣單元44的排氣通道44b，以及一端連接至氣體供給單元46的供氣通道46b。排氣通道44b的另一端以及供氣通道46b的另一端，分別連通至蝕刻腔室42。在腔室蓋42a的內部，以將蝕刻腔室42分為上下的方式配設有網狀的氣體分散構件42d。 On the upper part of the chamber cover 42a which becomes the ceiling of the etching chamber 42, an exhaust passage 44b connected to the exhaust unit 44 at one end and a gas supply passage 46b connected to the gas supply unit 46 at one end are formed. The other end of the exhaust channel 44b and the other end of the gas supply channel 46b communicate with the etching chamber 42 respectively. Inside the chamber cover 42a, a mesh-shaped gas dispersing member 42d is disposed so as to divide the etching chamber 42 into upper and lower portions.

接著，實施蝕刻工件1的蝕刻步驟。使排氣單元44動作，並通過排氣通道44b將蝕刻腔室42的內部排氣。圖5(B)是示意性顯示蝕刻腔室42之排氣狀態的剖面圖。在蝕刻腔室42的內部充分排氣後，由排氣單元44停止排氣。 Next, an etching step of etching the workpiece 1 is carried out. The exhaust unit 44 is operated, and the inside of the etching chamber 42 is exhausted through the exhaust passage 44b. FIG. 5(B) is a cross-sectional view schematically showing the exhaust state of the etching chamber 42 . After the inside of the etching chamber 42 is sufficiently exhausted, the exhaust is stopped by the exhaust unit 44 .

然後，使氣體供給單元46動作，通過供氣通道46b從氣體供給源46a將二氟化氙氣體導入蝕刻腔室42的內部。此時，二氟化氙氣體藉由氣體分散構件42d均勻地供給至工件1的正面上。該二氟化氙氣體，蝕刻已露出之矽基板1c的正面。圖6(A)是示意性顯示蝕刻步驟的剖面圖。 Then, the gas supply unit 46 is operated, and xenon difluoride gas is introduced into the etching chamber 42 from the gas supply source 46a through the gas supply channel 46b. At this time, the xenon difluoride gas is uniformly supplied onto the front surface of the workpiece 1 by the gas dispersing member 42d. The xenon difluoride gas etches the exposed front surface of the silicon substrate 1c. FIG. 6(A) is a cross-sectional view schematically showing an etching step.

在蝕刻步驟中由於不需要使二氟化氙氣體電漿化，在蝕刻裝置40中不需要使氣體電漿化的機構。雷射加工裝置2成為一種藉由裝置構成最小限度的複雜化而能夠進行工件的蝕刻之裝置。 Since it is not necessary to plasma the xenon difluoride gas in the etching step, the etching device 40 does not require a mechanism for plasmating the gas. The laser processing device 2 is a device capable of etching a workpiece by minimizing the complexity of the device configuration.

之後，為了使蝕刻停止而將二氟化氙氣體從蝕刻腔室42中排出。圖6(B)是示意性顯示蝕刻腔室42之排氣狀態的剖面圖。藉由氣體供給單元46使二氟化氙氣體的供給停止，當排氣單元44動作以將二氟化氙氣體排出時，蝕刻結束。 Thereafter, xenon difluoride gas is exhausted from the etching chamber 42 to stop the etching. FIG. 6(B) is a cross-sectional view schematically showing the exhaust state of the etching chamber 42 . The supply of the xenon difluoride gas is stopped by the gas supply unit 46, and when the exhaust unit 44 operates to exhaust the xenon difluoride gas, the etching ends.

再者，蝕刻裝置40可以進一步具備獨立的排氣單元，也可以藉由該獨立的排氣單元將二氟化氙氣體排氣。由於二氟化氙氣體為強效的氟化劑，較佳為由專用的回收機構回收並進行適當的處理。 Furthermore, the etching device 40 may further include an independent exhaust unit, and the xenon difluoride gas may be exhausted through the independent exhaust unit. Since xenon difluoride gas is a powerful fluorinating agent, it is better to be recovered by a dedicated recovery mechanism and properly disposed of.

圖7(A)是放大並示意性顯示實施蝕刻步驟時之工件的剖面圖。矽基板1c容易被二氟化氙氣體46d蝕刻，而水溶性樹脂膜15則不容易被蝕刻。因此，在蝕刻步驟中矽基板1c被選擇性地蝕刻。 FIG. 7(A) is an enlarged and schematic cross-sectional view of the workpiece when an etching step is performed. The silicon substrate 1c is easily etched by the xenon difluoride gas 46d, but the water-soluble resin film 15 is not easily etched. Therefore, the silicon substrate 1c is selectively etched in the etching step.

圖7(B)是放大並示意性顯示蝕刻步驟後之工件1的剖面圖。在矽基板1c之正面上包含有於雷射加工步驟中形成的加工痕，若去除包含該加工痕之矽基板1c的正面，則在工件1被分割而形成的元件晶片上不會殘留加工痕，元件晶片的強度會提高。 FIG. 7(B) is an enlarged and schematic cross-sectional view showing the workpiece 1 after the etching step. The front surface of the silicon substrate 1c includes processing marks formed in the laser processing step. If the front surface of the silicon substrate 1c including the processing marks is removed, no processing marks will remain on the element wafers formed by dividing the workpiece 1 , The strength of the component wafer will be improved.

此外，當二氟化氙氣體46d接觸到附著在工件1之正面上的包含銅之加工屑7b時，包含在加工屑7b中的銅會被氟化。由於當銅被氟化時其與大氣中的水分間的反應性會降低，所以能夠抑制加工屑7b的巨大化。 Furthermore, when the xenon difluoride gas 46d comes into contact with the machining chips 7b containing copper attached to the front surface of the workpiece 1, the copper contained in the machining chips 7b is fluorinated. When copper is fluorinated, its reactivity with moisture in the air decreases, so that enlargement of the machining waste 7b can be suppressed.

在實施蝕刻步驟之後，實施將工件1從蝕刻腔室42中搬出之搬出步驟。圖8(A)是示意性顯示從蝕刻腔室42取出工件1之狀態的剖面圖。蝕刻腔室42具備例如未圖示的洩漏機構，大氣被導入至蝕刻腔室42內，並使氣壓相當於外部。接著，拉起腔室蓋42a，並將工件1搬出。 After performing the etching step, a carrying out step of carrying out the workpiece 1 from the etching chamber 42 is carried out. FIG. 8(A) is a cross-sectional view schematically showing a state in which the workpiece 1 is taken out from the etching chamber 42 . The etching chamber 42 is provided with, for example, a not-shown leakage mechanism, and atmospheric air is introduced into the etching chamber 42 so that the air pressure is equivalent to the outside. Next, the chamber cover 42a is pulled up, and the workpiece 1 is carried out.

此外，如圖8(B)所示，蝕刻裝置40也可以具備將氮氣供給至蝕刻腔室42的氣體源46c。圖8(B)是示意性顯示蝕刻裝置40之一例的剖面圖。當蝕刻腔室42的壓力相當於外部時，可以從氣體源46c將氮氣導入蝕刻腔室42。 In addition, as shown in FIG. 8(B) , the etching apparatus 40 may include a gas source 46 c that supplies nitrogen gas to the etching chamber 42 . FIG. 8(B) is a cross-sectional view schematically showing an example of an etching device 40 . When the pressure of the etching chamber 42 is equivalent to the outside, nitrogen gas may be introduced into the etching chamber 42 from the gas source 46c.

在將大氣導入蝕刻腔室42的情況，大氣中包含的水分等會進入蝕刻腔室42且水會附著於腔室蓋42a之內壁等。於是，當欲使用蝕刻裝置40實施其他工件1之蝕刻時，會有無法實施適當的蝕刻之疑慮。相對於此，在將氮氣導入蝕刻腔室42的情況，能夠防止水等對蝕刻腔室42內部的侵入。 In the case where the atmosphere is introduced into the etching chamber 42, moisture or the like contained in the atmosphere enters the etching chamber 42 and the water adheres to the inner wall of the chamber cover 42a or the like. Therefore, when attempting to etch another workpiece 1 using the etching apparatus 40, there is a possibility that appropriate etching cannot be performed. On the other hand, when nitrogen gas is introduced into the etching chamber 42 , intrusion of water or the like into the etching chamber 42 can be prevented.

在實施搬出步驟之後，實施清洗工件1之清洗步驟。圖9(A)是示意性顯示工件1之清洗的剖面圖。藉由搬送裝置8等將工件1從蝕刻裝置40再次搬送到保護膜塗佈兼清洗裝置38。接著，將噴嘴38b的排出口定位在工作 台38a中央附近的上方，並一邊使工作台38a旋轉一邊從該排出口使清洗液排出至工件1的正面1a上。 After carrying out the carrying-out step, a cleaning step of cleaning the workpiece 1 is carried out. FIG. 9(A) is a cross-sectional view schematically showing cleaning of the workpiece 1 . The workpiece 1 is again conveyed from the etching device 40 to the resist coating and cleaning device 38 by the conveying device 8 or the like. Next, the discharge port of the nozzle 38b is positioned at the working The cleaning liquid is discharged from the discharge port onto the front surface 1a of the workpiece 1 while rotating the table 38a above the center of the table 38a.

如圖9(A)所示，當使清洗液噴出至工件1的正面1a時，能夠從工件1的正面去除作為保護膜功能的水溶性樹脂膜15。圖9(B)是放大並示意性顯示清洗後之工件1的剖面圖。如圖9(B)所示，附著在水溶性樹脂膜15上的加工屑7b，與該水溶性樹脂膜15一起從工件1上被洗掉。 As shown in FIG. 9(A) , when the cleaning liquid is sprayed onto the front surface 1 a of the workpiece 1 , the water-soluble resin film 15 functioning as a protective film can be removed from the front surface of the workpiece 1 . FIG. 9(B) is an enlarged and schematic cross-sectional view showing the workpiece 1 after cleaning. As shown in FIG. 9(B), the machining chips 7b adhering to the water-soluble resin film 15 are washed off the workpiece 1 together with the water-soluble resin film 15 .

另外，附著在露出於加工槽3a底部之矽基板1c上的加工屑7b，雖然在清洗步驟中有無法充分去除的情況，但在蝕刻步驟中包含在該加工屑7b中的銅已被氟化，由於已抑制加工屑7b的巨大化所以不會成為問題。其後，在沿著切割道5切割工件1時，該加工屑7b會被去除。 In addition, the processing chips 7b adhering to the silicon substrate 1c exposed at the bottom of the processing tank 3a may not be sufficiently removed in the cleaning step, but the copper contained in the processing chips 7b is fluorinated in the etching step. , since the enlargement of the machining waste 7b is suppressed, it will not become a problem. Thereafter, when the workpiece 1 is cut along the cutting bead 5, the machining chips 7b are removed.

如同以上的說明，根據本實施方式之工件1的加工方法，當沿著切割道5去除功能層3時，即使從被雷射加工的TEG7a產生包含銅的加工屑7b，能夠藉由蝕刻步驟將銅氟化以抑制巨大化。此外，沿著切割道5已露出之矽基板1c包含加工痕的正面，由於藉由蝕刻步驟而被去除，能夠將工件1被分割所形成的元件晶片之強度提升。 As described above, according to the processing method of the workpiece 1 according to the present embodiment, when the functional layer 3 is removed along the scribe line 5, even if processing chips 7b containing copper are generated from the laser processed TEG 7a, it can be removed by the etching step. Copper is fluorinated to suppress gigantism. In addition, the surface of the silicon substrate 1c exposed along the dicing line 5 including the processing marks is removed by the etching step, which can improve the strength of the component wafers formed by dividing the workpiece 1 .

此外，本發明並不限定於上述實施方式的記載，能夠作各種變更以實施。例如，在上述實施方式中，雖已說明了關於在實施蝕刻步驟之後實施清洗步驟的情況，但本發明之一個形態的工件加工方法並不限定於此。例如，也可以在實施蝕刻步驟之前實施清洗步驟。 In addition, this invention is not limited to description of said embodiment, It can change variously and can implement. For example, in the above-mentioned embodiments, the case where the cleaning step is performed after the etching step has been described, the workpiece processing method of one aspect of the present invention is not limited thereto. For example, a cleaning step may also be performed before performing the etching step.

在此情況下，由於藉由實施清洗步驟作為保護膜功能的水溶性樹脂膜15被從工件1的正面1a上去除，所以在蝕刻步驟中功能層3的上表面會曝露於二氟化氙氣體中。然而，由於二氟化氙氣體對於矽基板1c較功能層3的選擇性較高，所以能夠適當地蝕刻因雷射加工而殘留加工痕的矽基板1c之正面。 In this case, since the water-soluble resin film 15 functioning as a protective film is removed from the front surface 1a of the workpiece 1 by performing the cleaning step, the upper surface of the functional layer 3 is exposed to xenon difluoride gas in the etching step. middle. However, since the xenon difluoride gas has a higher selectivity for the silicon substrate 1c than the functional layer 3, it can properly etch the front surface of the silicon substrate 1c with processing marks left by laser processing.

其他，上述實施方式的構造、方法等，在不脫離本發明目的之範圍下，可作適當變更以實施。 In addition, the structures, methods, etc. of the above-mentioned embodiments can be implemented with appropriate changes without departing from the scope of the purpose of the present invention.

1‧‧‧工件 1‧‧‧Workpiece

9‧‧‧膠膜 9‧‧‧Film

11‧‧‧框架 11‧‧‧Framework

13‧‧‧框架單元 13‧‧‧Frame unit

40‧‧‧蝕刻裝置 40‧‧‧Etching device

42‧‧‧蝕刻腔室 42‧‧‧Etching chamber

42a‧‧‧腔室蓋 42a‧‧‧chamber cover

42b‧‧‧保持台 42b‧‧‧Holding table

42c‧‧‧片構件 42c‧‧‧piece component

42b‧‧‧氣體分散構件 42b‧‧‧Gas dispersion components

44‧‧‧排氣單元 44‧‧‧exhaust unit

44b‧‧‧排氣通道 44b‧‧‧Exhaust channel

46‧‧‧氣體供給單元 46‧‧‧gas supply unit

46a‧‧‧氣體供給源 46a‧‧‧gas supply source

46b‧‧‧供氣通道 46b‧‧‧air supply channel

Claims (4)

一種工件加工方法，該工件具有矽基板以及形成在該矽基板上的功能層，且該工件在設定於正面的多條交叉切割道所劃分的各區域中形成有包含該功能層的元件，並在背面黏貼有被擴張在框架上的膠膜而成為框架單元的狀態；該工件加工方法之特徵在於具備：雷射加工步驟，從該工件之該正面側沿著該切割道照射對該功能層具有吸收性之波長的雷射光束以去除該功能層，並使該矽基板沿著該切割道露出；容納步驟，在該雷射加工步驟之後，將該工件容納於蝕刻腔室中；以及蝕刻步驟，在該容納步驟之後，將二氟化氙氣體供給至該工件的該正面，並沿著該切割道蝕刻以去除已露出之該矽基板的正面；該蝕刻腔室具備在下方具有開口之凹狀的腔室蓋，以及配設於該腔室蓋的下方的保持台；該保持台具備直徑比該框架單元的直徑大的載置面；該腔室蓋的該開口的直徑比該工件的直徑大；該腔室蓋的外徑比該框架的內徑小；在該容納步驟中，以該框架單元的中心重疊於該保持台的中心及該腔室蓋的中心之方式，將該工件載置於該保持台上，使該腔室蓋下降並接觸構成該框架單元的該膠膜，形成被該腔室蓋及該保持台包圍而密封之區域，藉此將該工件容納至該蝕刻腔室。 A workpiece processing method, the workpiece has a silicon substrate and a functional layer formed on the silicon substrate, and the workpiece is formed with elements including the functional layer in each area divided by a plurality of cross cutting lines set on the front surface, and The adhesive film expanded on the frame is pasted on the back to form a frame unit; the workpiece processing method is characterized in that it includes: a laser processing step, irradiating the functional layer from the front side of the workpiece along the cutting line a laser beam having an absorbing wavelength to remove the functional layer and expose the silicon substrate along the scribe line; accommodating the workpiece in an etching chamber after the laser processing step; and etching step, after the accommodating step, supply xenon difluoride gas to the front side of the workpiece, and etch along the dicing line to remove the exposed front side of the silicon substrate; the etching chamber has an opening below A concave chamber cover, and a holding table arranged under the chamber cover; the holding table has a mounting surface with a diameter larger than that of the frame unit; the diameter of the opening of the chamber cover is larger than that of the workpiece The diameter of the chamber cover is large; the outer diameter of the chamber cover is smaller than the inner diameter of the frame; in the accommodating step, the center of the frame unit overlaps the center of the holding table and the center of the chamber cover. The workpiece is placed on the holding table, the chamber cover is lowered and contacts the adhesive film constituting the frame unit, forming a sealed area surrounded by the chamber cover and the holding table, thereby accommodating the workpiece in the etch chamber. 如請求項1所述的工件加工方法，其中，其特徵在於：該功能層中包含有銅；在該雷射加工步驟中，由於雷射光束的照射自該功能層產生包含銅之加工屑；在該蝕刻步驟中，藉由該二氟化氙氣體使該加工屑所包含之該銅的表面氟化。 The workpiece processing method as described in claim 1, wherein, it is characterized in that: the functional layer contains copper; in the laser processing step, processing chips containing copper are generated from the functional layer due to the irradiation of the laser beam; In the etching step, the surface of the copper contained in the machining chips is fluorinated by the xenon difluoride gas. 一種蝕刻工件的蝕刻裝置，該工件具有矽基板以及形成在該矽基板上的功能層，且該工件在設定於正面的多條交叉切割道所劃分的各區域中形成有包含該功能層的元件，並在背面黏貼有被擴張在框架上的膠膜而成為框架 單元的狀態，被以對該功能層具有吸收性之波長的雷射光束照射，而沿著該切割道去除該功能層使該矽基板露出；該蝕刻裝置之特徵在於具備：蝕刻腔室，容納該工件；排氣單元，將該蝕刻腔室內的空氣排出；以及氣體供給單元，將二氟化氙氣體供給至該蝕刻腔室內；該蝕刻腔室具備在下方具有開口之凹狀的腔室蓋，以及配設於該腔室蓋的下方的保持台；該保持台具備直徑比該框架單元的直徑大的載置面；該腔室蓋的該開口的直徑比該工件的直徑大；該腔室蓋的外徑比該框架的內徑小；以該框架單元的中心重疊於該保持台的中心及該腔室蓋的中心之方式，將該工件載置於該保持台上，使該腔室蓋下降並接觸構成該框架單元的該膠膜，形成被該腔室蓋及該保持台包圍而密封之區域，藉此將該工件容納至該蝕刻腔室。 An etching device for etching a workpiece, the workpiece has a silicon substrate and a functional layer formed on the silicon substrate, and the workpiece is formed with elements including the functional layer in each area divided by a plurality of cross cutting lines set on the front surface , and the adhesive film expanded on the frame is pasted on the back to become the frame The state of the unit is irradiated with a laser beam of absorptive wavelength to the functional layer, and the functional layer is removed along the cutting line to expose the silicon substrate; the etching device is characterized in that it has: an etching chamber containing The workpiece; an exhaust unit for exhausting air in the etching chamber; and a gas supply unit for supplying xenon difluoride gas into the etching chamber; the etching chamber is provided with a recessed chamber cover having an opening below , and a holding table arranged under the chamber cover; the holding table has a mounting surface with a diameter larger than the diameter of the frame unit; the diameter of the opening of the chamber cover is larger than the diameter of the workpiece; the chamber The outer diameter of the chamber cover is smaller than the inner diameter of the frame; the workpiece is placed on the holding table in such a way that the center of the frame unit overlaps the center of the holding table and the center of the chamber cover, so that the chamber The chamber cover descends and contacts the adhesive film constituting the frame unit, forming a sealed area surrounded by the chamber cover and the holding table, thereby accommodating the workpiece into the etching chamber. 一種對工件進行雷射加工之雷射加工裝置，該工件具有矽基板以及形成在該矽基板上的功能層，且該工件在設定於正面的多條交叉切割道所劃分的各區域中形成有包含該功能層的元件，並在背面黏貼有被擴張在框架上的膠膜而成為框架單元的狀態；該雷射加工裝置之特徵在於具備：卡盤台，其保持該工件；雷射光束照射單元，其將對該功能層具有吸收性之波長的雷射光束從被保持在該卡盤台上的該工件之該正面側沿著該切割道照射，藉此去除該功能層，以沿著該切割道使該矽基板露出；以及蝕刻單元，其將二氟化氙氣體供給至該工件，並沿著該切割道蝕刻已露出之該矽基板的正面；該蝕刻單元具備：蝕刻腔室，容納該工件；排氣單元，將該蝕刻腔室內的空氣排出；以及氣體供給單元，將二氟化氙氣體供給至該蝕刻腔室內； 該蝕刻腔室具備在下方具有開口之凹狀的腔室蓋，以及配設於該腔室蓋的下方的保持台；該保持台具備直徑比該框架單元的直徑大的載置面；該腔室蓋的該開口的直徑比該工件的直徑大；該腔室蓋的外徑比該框架的內徑小；以該框架單元的中心重疊於該保持台的中心及該腔室蓋的中心之方式，將該工件載置於該保持台上，使該腔室蓋下降並接觸構成該框架單元的該膠膜，形成被該腔室蓋及該保持台包圍而密封之區域，藉此將該工件容納至該蝕刻腔室。 A laser processing device for performing laser processing on a workpiece, the workpiece has a silicon substrate and a functional layer formed on the silicon substrate, and the workpiece is formed in each area divided by a plurality of cross cutting lines set on the front surface The component including the functional layer is attached on the back with an adhesive film expanded on the frame to form a frame unit; the laser processing device is characterized in that it has: a chuck table, which holds the workpiece; laser beam irradiation A unit that irradiates a laser beam of a wavelength having absorption to the functional layer from the front side of the workpiece held on the chuck table along the dicing line, thereby removing the functional layer to along the The cutting line exposes the silicon substrate; and an etching unit supplies xenon difluoride gas to the workpiece, and etches the exposed front side of the silicon substrate along the cutting line; the etching unit has: an etching chamber, accommodating the workpiece; an exhaust unit for exhausting air in the etching chamber; and a gas supply unit for supplying xenon difluoride gas into the etching chamber; The etching chamber has a recessed chamber cover with an opening below, and a holding table arranged under the chamber cover; the holding table has a mounting surface with a diameter larger than that of the frame unit; the chamber The diameter of the opening of the chamber cover is larger than the diameter of the workpiece; the outer diameter of the chamber cover is smaller than the inner diameter of the frame; the center of the frame unit overlaps between the center of the holding table and the center of the chamber cover In this way, the workpiece is placed on the holding table, the chamber cover is lowered and contacts the adhesive film constituting the frame unit, forming a sealed area surrounded by the chamber cover and the holding table, whereby the A workpiece is received into the etch chamber.
TW108102139A 2018-01-23 2019-01-19 Processing method, etching device and laser processing device TWI784121B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018009002A JP7066263B2 (en) 2018-01-23 2018-01-23 Machining method, etching equipment, and laser processing equipment
JP2018-009002 2018-01-23

Publications (2)

Publication Number Publication Date
TW201932224A TW201932224A (en) 2019-08-16
TWI784121B true TWI784121B (en) 2022-11-21

Family

ID=67365933

Family Applications (1)

Application Number Title Priority Date Filing Date
TW108102139A TWI784121B (en) 2018-01-23 2019-01-19 Processing method, etching device and laser processing device

Country Status (4)

Country Link
JP (1) JP7066263B2 (en)
KR (1) KR102582783B1 (en)
CN (1) CN110064849B (en)
TW (1) TWI784121B (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021122932A (en) * 2020-02-10 2021-08-30 Ｔｏｗａ株式会社 Processing device
CN113084355A (en) * 2021-03-05 2021-07-09 深圳市福浪电子有限公司 Laser marking device for crystal oscillator production and processing
CN113894427A (en) * 2021-09-01 2022-01-07 苏州瀚川智能科技股份有限公司 Automatic laser activation device for IC belt
KR102507019B1 (en) 2022-10-05 2023-03-07 주식회사 아이티아이 Laser processing and etching apparatus and method
CN117697166B (en) * 2024-02-06 2024-04-19 中国工程物理研究院激光聚变研究中心 Method for etching organic film on surface of metal film by utilizing laser

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008518450A (en) * 2004-11-01 2008-05-29 エグシル テクノロジー リミテッド Increased die strength by etching during or after dicing
JP2013535114A (en) * 2010-06-22 2013-09-09 アプライド マテリアルズ インコーポレイテッド Wafer dicing using femtosecond laser and plasma etching
TW201535501A (en) * 2014-01-29 2015-09-16 Applied Materials Inc Wafer dicing using hybrid laser scribing and plasma etch approach with mask plasma treatment for improved mask etch resistance
JP2017520938A (en) * 2014-06-30 2017-07-27 東京エレクトロン株式会社 Anisotropic etching of copper using passivation

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02187025A (en) * 1989-01-13 1990-07-23 Sanyo Electric Co Ltd Etching and manufacture of x-ray lithography mask
JP2003303788A (en) * 2002-04-11 2003-10-24 Mitsubishi Electric Corp Etching equipment
JP2005064230A (en) 2003-08-12 2005-03-10 Disco Abrasive Syst Ltd Dividing method of plate-shaped article
CN1755479A (en) * 2004-09-27 2006-04-05 Idc公司 Method and system for xenon fluoride etching with enhanced efficiency
GB2458475B (en) * 2008-03-18 2011-10-26 Xsil Technology Ltd Processing of multilayer semiconductor wafers
GB2459302A (en) * 2008-04-18 2009-10-21 Xsil Technology Ltd A method of dicing wafers to give high die strength
JP2010162629A (en) * 2009-01-14 2010-07-29 Seiko Epson Corp Method of manufacturing mems device
CA2690697A1 (en) * 2009-01-27 2010-07-27 Air Products And Chemicals, Inc. Selective etching and formation of xenon difluoride
JP5340806B2 (en) * 2009-05-21 2013-11-13 株式会社ディスコ Laser processing method of semiconductor wafer
US7977213B1 (en) * 2010-03-31 2011-07-12 Electro Scientific Industries, Inc. Use of laser energy transparent stop layer to achieve minimal debris generation in laser scribing a multilayer patterned workpiece
US8771539B2 (en) * 2011-02-22 2014-07-08 Applied Materials, Inc. Remotely-excited fluorine and water vapor etch
US8703581B2 (en) * 2011-06-15 2014-04-22 Applied Materials, Inc. Water soluble mask for substrate dicing by laser and plasma etch
JP5918044B2 (en) * 2012-06-25 2016-05-18 株式会社ディスコ Processing method and processing apparatus
US20150011073A1 (en) * 2013-07-02 2015-01-08 Wei-Sheng Lei Laser scribing and plasma etch for high die break strength and smooth sidewall
JP6113019B2 (en) * 2013-08-07 2017-04-12 株式会社ディスコ Wafer division method
US9224650B2 (en) * 2013-09-19 2015-12-29 Applied Materials, Inc. Wafer dicing from wafer backside and front side
JP6324743B2 (en) * 2014-01-31 2018-05-16 住友電工デバイス・イノベーション株式会社 Manufacturing method of semiconductor device
US20160042968A1 (en) * 2014-08-05 2016-02-11 Applied Materials, Inc. Integrated oxide and si etch for 3d cell channel mobility improvements
JP2016039186A (en) * 2014-08-05 2016-03-22 株式会社ディスコ Processing method for wafer
CN107393848B (en) * 2017-07-12 2019-12-10 江苏鲁汶仪器有限公司 High-tightness gas-phase corrosion cavity

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008518450A (en) * 2004-11-01 2008-05-29 エグシル テクノロジー リミテッド Increased die strength by etching during or after dicing
JP2013535114A (en) * 2010-06-22 2013-09-09 アプライド マテリアルズ インコーポレイテッド Wafer dicing using femtosecond laser and plasma etching
TW201535501A (en) * 2014-01-29 2015-09-16 Applied Materials Inc Wafer dicing using hybrid laser scribing and plasma etch approach with mask plasma treatment for improved mask etch resistance
JP2017520938A (en) * 2014-06-30 2017-07-27 東京エレクトロン株式会社 Anisotropic etching of copper using passivation

Also Published As

Publication number Publication date
JP2019129203A (en) 2019-08-01
JP7066263B2 (en) 2022-05-13
CN110064849B (en) 2023-01-13
CN110064849A (en) 2019-07-30
KR102582783B1 (en) 2023-09-25
TW201932224A (en) 2019-08-16
KR20190089734A (en) 2019-07-31

Similar Documents

Publication Publication Date Title
TWI784121B (en) Processing method, etching device and laser processing device
KR102107849B1 (en) Laser machining apparatus and its intake passage cleaning method
CN106847747B (en) Method for dividing wafer
US7265033B2 (en) Laser beam processing method for a semiconductor wafer
CN108063118B (en) Method for processing wafer
CN108231676B (en) Method for processing wafer
US6949147B2 (en) In situ module for particle removal from solid-state surfaces
KR20040086725A (en) Method for dividing semiconductor wafer
JP2007173475A (en) Method for dividing wafer
KR20150043975A (en) Wafer processing method
JP2008130818A (en) Laser processing apparatus
JP2013175642A (en) Laser processing method of wafer
KR102084269B1 (en) Laser machining apparatus and method for coating protection film
JP2010267638A (en) Coating method for protective film and laser beam machining method for wafer
JP2015095515A (en) Cutting device and cutting method
JP5340447B2 (en) Laser processing method and laser processed product
JP2011062739A (en) Laser beam machining apparatus
CN111415863B (en) Wafer processing method
JP2022035059A (en) Washing device, laser processing device, washing method for wafer, and laser processing method
JP2016207820A (en) Processing method of wafer
JP2021061317A (en) Wafer processing method
JP7460275B2 (en) Wafer processing method
JP5288785B2 (en) Wafer processing equipment
JP2005066675A (en) Laser beam machining method
US20230191537A1 (en) Processing method of workpiece