TWI784121B - Processing method, etching device and laser processing device - Google Patents
Processing method, etching device and laser processing device Download PDFInfo
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- TWI784121B TWI784121B TW108102139A TW108102139A TWI784121B TW I784121 B TWI784121 B TW I784121B TW 108102139 A TW108102139 A TW 108102139A TW 108102139 A TW108102139 A TW 108102139A TW I784121 B TWI784121 B TW I784121B
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/03—Observing, e.g. monitoring, the workpiece
- B23K26/032—Observing, e.g. monitoring, the workpiece using optical means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/0823—Devices involving rotation of the workpiece
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/083—Devices involving movement of the workpiece in at least one axial direction
- B23K26/0853—Devices involving movement of the workpiece in at least in two axial directions, e.g. in a plane
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/14—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor
- B23K26/142—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor for the removal of by-products
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/16—Removal of by-products, e.g. particles or vapours produced during treatment of a workpiece
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/18—Working by laser beam, e.g. welding, cutting or boring using absorbing layers on the workpiece, e.g. for marking or protecting purposes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/362—Laser etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/362—Laser etching
- B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/70—Auxiliary operations or equipment
- B23K26/702—Auxiliary equipment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
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- Computer Hardware Design (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
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- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
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- Dicing (AREA)
- ing And Chemical Polishing (AREA)
Abstract
[課題]能夠去除產生在工件的加工痕。[解決手段]一種工件加工方法,該工件具有矽基板以及形成在該矽基板上的功能層,且該工件在設定於正面的多條交叉切割道所劃分的各區域中形成有包含該功能層的元件;該工件加工方法具備:雷射加工步驟,從工件之正面側沿著該切割道照射對功能層具有吸收性之波長的雷射光束以去除該功能層,並使該矽基板沿著該切割道露出;容納步驟,在該雷射加工步驟之後,將該工件容納於蝕刻腔室中;以及蝕刻步驟,在該容納步驟之後,將二氟化氙氣體供給至該工件的正面,並沿著該切割道蝕刻以去除已露出之矽基板的正面。[Problem] It is possible to remove machining marks on workpieces. [Solution] A workpiece processing method, the workpiece has a silicon substrate and a functional layer formed on the silicon substrate, and the workpiece includes the functional layer in each area divided by a plurality of cross cutting lines set on the front surface The workpiece processing method includes: a laser processing step, irradiating a laser beam with an absorbing wavelength to the functional layer from the front side of the workpiece along the cutting line to remove the functional layer, and making the silicon substrate along the The scribe line is exposed; a containing step of containing the workpiece in an etching chamber after the laser processing step; and an etching step of supplying xenon difluoride gas to the front surface of the workpiece after the containing step, and Etching along the scribe line removes the exposed front side of the silicon substrate.
Description
本發明是關於加工方法、蝕刻裝置以及雷射加工裝置。 The present invention relates to a processing method, an etching device and a laser processing device.
在配備有半導體元件之IC晶片等的元件晶片中,近年來,介電係數低的所謂Low-k材料被用作為元件中所使用的配線層間的層間絕緣膜等。當Low-k膜用於層間絕緣膜時,能夠降低形成於配線層間的寄生電容,且能夠提高元件晶片的處理能力等。作為Low-k膜,已知有SiOF、SiOB(硼矽酸鹽玻璃)等無機物類之膜,或聚醯亞胺類、對二甲苯類等聚合物膜即有機物類之膜。 In element wafers such as IC wafers equipped with semiconductor elements, in recent years, so-called Low-k materials having a low dielectric constant have been used as interlayer insulating films between wiring layers used in elements, and the like. When the Low-k film is used as an interlayer insulating film, the parasitic capacitance formed between wiring layers can be reduced, and the throughput of element wafers can be improved. Examples of Low-k films include inorganic films such as SiOF and SiOB (borosilicate glass), and organic films that are polymer films such as polyimides and p-xylenes.
元件晶片是例如藉由在圓板狀的矽基板之正面上層積配線層或層間絕緣膜等的功能層以形成元件,並沿著以劃分各元件之方式所設定的多條被稱作切割道的分割預定線將該矽基板分割所形成。矽基板的分割是例如藉由圓環狀的切割刀片沿著該切割道切割矽基板來執行。 Element wafers are formed by laminating functional layers such as wiring layers or interlayer insulating films on the front surface of a disc-shaped silicon substrate to form elements, and along a plurality of dicing lines that are set to divide each element The planned dividing line is formed by dividing the silicon substrate. The dicing of the silicon substrate is performed, for example, by cutting the silicon substrate along the dicing line with an annular dicing blade.
然而,由於Low-k膜是非常脆弱的膜,當藉由切割刀片切割形成有Low-k膜的矽基板時,會使得Low-k膜從矽基板剝離,且剝離直達元件而在該元件上產生損傷。於是,有一種通過藉由雷射光束照射的燒蝕加工部分地去除功能層,並沿著該切割道形成比功能層厚度要深的加工槽,其後,沿著該切割道由切割刀片進行切割的工件分割方法被提出(參閱專利文獻1)。 However, since the Low-k film is a very fragile film, when the silicon substrate formed with the Low-k film is cut by a dicing blade, the Low-k film will be peeled off from the silicon substrate, and the peeling will reach the device directly on the device. produce damage. Then, there is a method of partially removing the functional layer by ablation processing irradiated with a laser beam, and forming a processing groove deeper than the thickness of the functional layer along the scribe line, and thereafter, cutting along the scribe line by a dicing blade. A cutting workpiece segmentation method has been proposed (see Patent Document 1).
[習知技術文獻] [Prior art literature]
[專利文獻] [Patent Document]
[專利文獻1]日本特開2005-64230號公報 [Patent Document 1] Japanese Patent Laid-Open No. 2005-64230
然而,當通過燒蝕加工形成加工槽時,該加工槽的底部到達矽基板,會在露出的矽基板之正面產生微小的加工痕。因此,存在下述問題:加工痕殘留在分割矽基板所形成的元件晶片上,且由該加工痕造成元件晶片的抗折強度低下。 However, when the processing groove is formed by ablation processing, the bottom of the processing groove reaches the silicon substrate, and tiny processing marks will be generated on the exposed front surface of the silicon substrate. Therefore, there is a problem that processing marks remain on the element wafer formed by dividing the silicon substrate, and the bending strength of the element wafer is lowered due to the processing mark.
本發明是鑑於此問題而提出,其目的在於提供一種能夠去除產生在工件上的加工痕之加工方法、蝕刻裝置以及雷射加工裝置。 The present invention is made in view of this problem, and an object of the present invention is to provide a processing method, an etching device, and a laser processing device capable of removing processing marks generated on a workpiece.
根據本發明之一個形態,提供一種工件加工方法,該工件具有矽基板以及形成在該矽基板上的功能層,且該工件在設定於正面的多條交叉切割道所劃分的各區域中形成有包含該功能層的元件;該工件加工方法之特徵在於具備:雷射加工步驟,從工件之正面側沿著該切割道照射對功能層具有吸收性之波長的雷射光束以去除該功能層,並使該矽基板沿著該切割道露出;容納步驟,在該雷射加工步驟之後,將該工件容納於蝕刻腔室中;以及蝕刻步驟,在該容納步驟之後,將二氟化氙氣體供給至該工件的正面,並沿著該切割道蝕刻以去除已露出之矽基板的正面。 According to one aspect of the present invention, there is provided a method for processing a workpiece, the workpiece has a silicon substrate and a functional layer formed on the silicon substrate, and the workpiece is formed in each area divided by a plurality of crossing scribes set on the front surface. A component comprising the functional layer; the workpiece processing method is characterized in that it comprises: a laser processing step of irradiating a laser beam of a wavelength that is absorbing to the functional layer from the front side of the workpiece along the cut line to remove the functional layer, and exposing the silicon substrate along the scribe line; a containing step, after the laser processing step, containing the workpiece in an etching chamber; and an etching step, after the containing step, supplying xenon difluoride gas to the front side of the workpiece, and etch along the scribe line to remove the exposed front side of the silicon substrate.
較佳為,該功能層中包含有銅,且在該雷射加工步驟中,由於雷射光束的照射自該功能層產生包含銅之加工屑,並在該蝕刻步驟中,藉由該二氟化氙氣體使該加工屑所包含之該銅的表面氟化。 Preferably, the functional layer contains copper, and in the laser processing step, due to the irradiation of the laser beam, processing chips containing copper are generated from the functional layer, and in the etching step, by the difluorine The xenon oxide gas fluorinates the surface of the copper included in the machining chips.
此外,根據本發明之另一形態,提供一種蝕刻工件的蝕刻裝置,該工件具有矽基板以及形成在該矽基板上的功能層,且該工件在設定於正面的多條交叉切割道所劃分的各區域中形成有包含該功能層的元件,並被以對該功能層具有吸收性之波長的雷射光束照射,而沿著該切割道去除該功能層使該矽基板露出;該蝕刻裝置之特徵在於具備:蝕刻腔室,容納該工件;排氣單元,將該蝕刻腔室內的空氣排出;以及氣體供給單元,將二氟化氙氣體供給至該蝕刻腔室內。 In addition, according to another aspect of the present invention, there is provided an etching device for etching a workpiece, the workpiece has a silicon substrate and a functional layer formed on the silicon substrate, and the workpiece is divided by a plurality of cross scribe lines set on the front surface. The components containing the functional layer are formed in each region, and are irradiated with a laser beam of absorptive wavelength to the functional layer, and the functional layer is removed along the cutting line to expose the silicon substrate; the etching device It is characterized by comprising: an etching chamber for accommodating the workpiece; an exhaust unit for exhausting air in the etching chamber; and a gas supply unit for supplying xenon difluoride gas into the etching chamber.
根據本發明之又一個形態,提供一種對工件進行雷射加工之雷射加工裝置,該工件具有矽基板以及形成在該矽基板上的功能層,且該工件在設定於正面的多條交叉切割道所劃分的各區域中形成有包含該功能層的元件;該雷射加工裝置之特徵在於具備:卡盤台,其保持該工件;雷射光束照射單元,其將對該功能層具有吸收性之波長的雷射光束從被保持在該卡盤台上的工件之 正面側沿著該切割道照射,藉此去除該功能層,以沿著該切割道使矽基板露出;以及蝕刻單元,其將二氟化氙氣體供給至工件,並沿著該切割道蝕刻已露出之矽基板的正面。 According to still another aspect of the present invention, there is provided a laser processing device for performing laser processing on a workpiece, the workpiece has a silicon substrate and a functional layer formed on the silicon substrate, and the workpiece is cut in a plurality of cross cuts set on the front surface. A component comprising the functional layer is formed in each area divided by the road; the laser processing device is characterized in that it has: a chuck table, which holds the workpiece; a laser beam irradiation unit, which will have absorption properties for the functional layer. A laser beam with a wavelength of the front side is irradiated along the scribe line, thereby removing the functional layer to expose the silicon substrate along the scribe line; The exposed front side of the silicon substrate.
根據本發明的一個形態,雷射光束沿著切割道照射在形成有功能層之矽基板的正面上以去除該功能層。然後,將沿著該切割道已露出矽基板之工件容納至蝕刻腔室中,並提供二氟化氙氣體至工件。於是,蝕刻並去除包含已露出之矽基板的加工痕之正面。因此,藉由沿著切割道分割工件所形成的元件晶片上不會殘留加工痕,而元件晶片的強度增強。 According to one aspect of the present invention, the laser beam is irradiated along the cutting line on the front surface of the silicon substrate on which the functional layer is formed to remove the functional layer. Then, the workpiece with the silicon substrate exposed along the cutting line is accommodated in the etching chamber, and xenon difluoride gas is provided to the workpiece. Then, the front side including the process mark of the exposed silicon substrate is etched and removed. Therefore, no processing marks remain on the element wafer formed by dividing the workpiece along the dicing line, and the strength of the element wafer is enhanced.
用於工件蝕刻之二氟化氙氣體,在工件蝕刻時不需要電漿化。從而,實施蝕刻的蝕刻裝置不需要配備用於電漿化的構造,而能夠容易地將該蝕刻裝置配備於雷射加工裝置中。當使用配備有蝕刻裝置的雷射加工裝置時,能夠在實施雷射加工步驟後快速地實施蝕刻步驟。 The xenon difluoride gas used for workpiece etching does not require plasmaization during workpiece etching. Therefore, an etching device for performing etching does not need to be provided with a structure for plasma formation, and the etching device can be easily provided in a laser processing device. When a laser processing device equipped with an etching device is used, the etching step can be quickly performed after the laser processing step is performed.
從而,根據本發明,提供一種能夠去除產生在工件上的加工痕之加工方法、蝕刻裝置以及雷射加工裝置。 Therefore, according to the present invention, there are provided a processing method, an etching device, and a laser processing device capable of removing processing marks generated on a workpiece.
1:工件 1: Workpiece
1a:正面 1a: front
1b:背面 1b: back
1c:矽基板 1c: Silicon substrate
3:功能層 3: Functional layer
3a:加工槽 3a: Processing groove
5:切割道 5: Cutting Road
7:元件 7: Components
7a:TEG 7a:TEG
7b:加工屑 7b: Processing chips
9:膠膜 9: Film
11:框架 11: frame
13:框架單元 13:Frame unit
15:水溶性樹脂 15: Water-soluble resin
2:雷射加工裝置 2: Laser processing device
4:基台 4: Abutment
6:卡匣載置台 6: Cassette loading table
6a:卡匣 6a: Cassette
8:搬送裝置 8: Conveying device
8a:搬送軌道 8a: Transport track
10:卡盤台 10: Chuck table
10a:保持面 10a: Keep the surface
10b、38c:夾具 10b, 38c: fixture
12、22:移動機構 12, 22: mobile mechanism
14、24:導軌 14, 24: guide rail
16、26:移動板 16, 26: Mobile board
18、28:滾珠螺桿 18, 28: ball screw
20:脈衝馬達 20: Pulse motor
30:支撐部 30: support part
32:雷射加工單元 32:Laser processing unit
34:加工頭 34: processing head
34a:雷射光束 34a: Laser Beam
36:攝像單元 36: camera unit
38:保護膜塗佈兼清洗裝置 38: Protective film coating and cleaning device
38a:工作台 38a: Workbench
38b:噴嘴 38b: Nozzle
40:蝕刻裝置 40: Etching device
42:蝕刻腔室 42: Etching chamber
42a:腔室蓋 42a: chamber cover
42b:保持台 42b: holding table
42c:片構件 42c: sheet component
42b:氣體分散構件 42b: Gas dispersion member
44:排氣單元 44: exhaust unit
44b:排氣通道 44b: exhaust channel
46:氣體供給單元 46: Gas supply unit
46a、46c:氣體供給源 46a, 46c: gas supply source
46b:供氣通道 46b: Air supply channel
46d:氣體 46d: gas
48:附觸控面板之顯示器 48: Display with touch panel
圖1是示意性顯示工件的立體圖。 FIG. 1 is a perspective view schematically showing a workpiece.
圖2是示意性顯示雷射加工裝置的側視圖。 Fig. 2 is a side view schematically showing the laser processing device.
圖3(A)是示意性顯示在工件上塗佈水溶性的液狀樹脂之狀態的剖面圖,圖3(B)是示意性顯示雷射加工步驟的剖面圖。 3(A) is a cross-sectional view schematically showing a state where a water-soluble liquid resin is coated on a workpiece, and FIG. 3(B) is a cross-sectional view schematically showing a laser processing step.
圖4(A)是放大並示意性顯示雷射光束照射之工件的剖面圖,圖4(B)是放大並示意性顯示雷射加工步驟後之工件的剖面圖。 4(A) is an enlarged and schematic cross-sectional view of a workpiece irradiated by a laser beam, and FIG. 4(B) is an enlarged and schematic cross-sectional view of a workpiece after a laser processing step.
圖5(A)是示意性顯示容納步驟的剖面圖,圖5(B)是示意性顯示蝕刻腔室之排氣狀態的剖面圖。 5(A) is a cross-sectional view schematically showing a housing step, and FIG. 5(B) is a cross-sectional view schematically showing an exhaust state of an etching chamber.
圖6(A)是示意性顯示蝕刻步驟的剖面圖,圖6(B)是示意性顯示蝕刻腔室之排氣狀態的剖面圖。 6(A) is a cross-sectional view schematically showing an etching step, and FIG. 6(B) is a cross-sectional view schematically showing an exhaust state of an etching chamber.
圖7(A)是放大並示意性顯示實施蝕刻步驟時之工件的剖面圖,圖7(B)是放大並示意性顯示蝕刻步驟後之工件的剖面圖。 7(A) is an enlarged and schematic cross-sectional view of the workpiece when the etching step is performed, and FIG. 7(B) is an enlarged and schematic cross-sectional view of the workpiece after the etching step.
圖8(A)是示意性顯示從蝕刻腔室取出工件之狀態的剖面圖,圖8(B)是示意性顯示蝕刻裝置之一例的剖面圖。 8(A) is a cross-sectional view schematically showing a state in which a workpiece is taken out of an etching chamber, and FIG. 8(B) is a cross-sectional view schematically showing an example of an etching apparatus.
圖9(A)是示意性顯示工件之清洗的剖面圖,圖9(B)是放大並示意性顯示清洗後之工件的剖面圖。 FIG. 9(A) is a cross-sectional view schematically showing the cleaning of the workpiece, and FIG. 9(B) is an enlarged and schematic cross-sectional view showing the cleaned workpiece.
首先,說明關於本實施方式的加工方法之工件。圖1是示意性顯示工件1的立體圖。工件1包含矽基板1c,以及形成於該矽基板1c上的功能層3。在工件1之正面1a上,設定有交叉的多條被稱作切割道5之分割預定線,藉由該切割道5所劃分之各區域中形成有IC(Integrated Circuit,積體電路)等的元件7。最後,藉由工件1被沿著切割道5分割,形成為各個元件晶片。
First, a workpiece related to the machining method of this embodiment will be described. FIG. 1 is a perspective view schematically showing a
在工件1的背面上,黏貼有被擴張在金屬製的框架11上的膠膜9。工件1在與膠膜9和框架11成為一體之框架單元13的狀態下被搬送並加工。在工件1被分割並形成為各個元件晶片時,該元件晶片是由於通過膠膜9的支撐而不會飛濺。
An
膠膜9具有:具有可撓性之薄膜狀的基板,以及形成在該基板之一邊的面上的漿糊層(接著劑層)。例如,PO(Polyolefin,聚烯烴)可用作基材。也可以使用較PO剛性高的PET(Polyethylene terephthalate,聚對苯二甲酸乙二酯)、聚氯乙烯(Polyvinylchloride)、聚苯乙烯(Polystyrene)等。此外,在漿糊層(接著劑層)中,可使用例如矽橡膠、丙烯酸系材料、環氧樹脂系材料等。
The
元件7具有包含多層的配線層以及絕緣各配線層之間的層間絕緣膜之功能層3。近年來,為了降低形成在配線層間的寄生電容,低介電係數之所謂的Low-k膜被使用在層間絕緣膜等中。作為Low-k膜,已知有SiOF、SiOB(硼矽酸鹽玻璃)等無機物類之膜或聚醯亞胺類、對二甲苯類等聚合物膜即有機物類之膜。
The
由於Low-k膜是非常脆弱的膜,當藉由切割刀片切割在正面形成有包含Low-k膜之功能層3的矽基板1c時,會使得Low-k膜從矽基板1c剝離,且剝離直達元件7而在該元件7上產生損傷。於是,在以切割刀片切割工件1之前,會藉由預先雷射加工(燒蝕加工)沿著切割道5去除功能層3。
Because the Low-k film is a very fragile film, when the
然而,若實施雷射加工,則矽基板1c會露出並在正面產生微小的加工痕。因此,存在下述問題:分割矽基板1c所形成的元件晶片上會殘留加工痕,且元件晶片的抗折強度降低。
However, if laser processing is performed, the
此外,近年來,包含元件7的半導體元件之高度積體化趨勢顯著,為了使該元件7的消耗電力減少或使訊號的傳輸速度提升,在配線層中使用低阻抗的銅。
In addition, in recent years, semiconductor elements including the
在工件1中形成有用於元件7的檢查等之被稱作TEG(Test Element Group,測試元件群)的測試用電路,且該TEG中也使用包含銅的配線層。TEG有時僅使用在工件1的分割之前,在此情況下,由於即使是形成在因工件1的分割而會失去的區域中也沒有問題,所以例如形成在與切割道5重疊的區域中。因此,在藉由雷射加工沿著切割道5形成加工槽時,也對包含銅的TEG實施雷射加工。
A test circuit called a TEG (Test Element Group) for inspection of the
當對包含銅的TEG進行雷射加工時,會產生包含銅的加工屑(碎片),並且一部分的該加工屑會殘留在因加工而沿著切割道5露出之矽基板1c上。由於該加工屑所包含的銅會逐漸地與空氣中的水分反應,當加工屑巨大化且到達元件7的形成區域的情況下,會成為一個問題。
When laser processing is performed on the TEG containing copper, processing chips (fragments) containing copper are generated, and a part of the processing chips remains on the
於是,在本實施方式的工件加工方法中,在實施雷射加工後,蝕刻矽基板1c所露出的正面,並且使加工屑所包含的銅之反應性降低。圖2是示意性顯示實施該工件1的加工方法之雷射加工裝置2的立體圖。使用圖2說明關於該雷射加工裝置2之構成。
Then, in the workpiece processing method of this embodiment, after laser processing is performed, the exposed front surface of the
雷射加工裝置2具備吸引保持框架單元13狀態的工件1之卡盤台10,以及配設在該卡盤台10上方的雷射加工單元32。
The
雷射加工裝置2具備配設在基台4上表面的前角部之卡匣載置台6。在卡匣載置台6上載置有容納多個工件1的卡匣6a。此外,雷射加工裝置2具備用於將框架單元13狀態的工件1搬送至基台4上方的搬送裝置8,以及搬送軌道8a。
The
在雷射加工裝置2之基台4的上表面,配設有具備Y軸導軌14、Y軸移動板16、Y軸滾珠螺桿18以及Y軸脈衝馬達20的Y軸移動機構(分度
進給機構)12。在基台4的上表面設置有在Y軸方向上平行的一對Y軸導軌14,且Y軸移動板16可滑動地安裝在Y軸導軌14上。
On the upper surface of the
在Y軸移動板16的下表面側設置有螺帽部(未圖示),在此螺帽部上,螺合有平行於Y軸導軌14的Y軸滾珠螺桿18。在Y軸滾珠螺桿18的一端上連結有Y軸脈衝馬達20。當藉由Y軸脈衝馬達20使Y軸滾珠螺桿18旋轉時,Y軸移動板16沿著Y軸導軌14在Y軸方向上移動。
A nut portion (not shown) is provided on the lower surface side of the Y-
在Y軸移動板16的上表面,配設有具備X軸導軌24、X軸移動板26、X軸滾珠螺桿28以及X軸脈衝馬達(未圖示)的X軸移動機構(加工進給機構)22。在Y軸移動板16的上表面設置有在X軸方向上平行的一對X軸導軌24,且X軸移動板26可滑動地安裝在X軸導軌24上。
On the upper surface of the Y-
在X軸移動板26的下表面側設置有螺帽部(未圖示),在此螺帽部上,螺合有平行於X軸導軌24的X軸滾珠螺桿28。在X軸滾珠螺桿28的一端上連結有X軸脈衝馬達。當藉由X軸脈衝馬達使X軸滾珠螺桿28旋轉時,X軸移動板26沿著X軸導軌24在X軸方向上移動。
A nut portion (not shown) is provided on the lower surface side of the
在X軸移動板26之上,配設有卡盤台10。卡盤台10在上表面側具有多孔質構件(未圖示)。多孔質構件的上表面成為保持工件1的保持面10a。卡盤台10可繞垂直於保持面10a的軸旋轉。
The chuck table 10 is disposed on the
卡盤台10具有連接至多孔質構件的吸引源(未圖示)。工件1透過膠膜9被載置於保持面10a上,當通過多孔質構件的孔使吸引源所產生的負壓對工件1作用時,工件1會被吸引保持在卡盤台10上。此外,在卡盤台10的周圍,具備固定構成框架單元13的框架11之夾具10b。
The chuck table 10 has a suction source (not shown) connected to the porous member. The
在雷射加工裝置2的基台4上表面之後部,配設有支撐雷射加工單元32的支撐部30。配設於支撐部30上部的雷射加工單元32具備:配設於卡盤台10上方的加工頭34,以及配設於鄰接該加工頭34之位置的攝像單元36。
On the rear portion of the upper surface of the
雷射加工單元32進行對形成在工件1上的功能層3具有吸收性之波長的雷射光束之脈衝振盪,並具有將該雷射光束聚光在保持於卡盤台10之工件1上的功能。攝像單元36具有拍攝保持於卡盤台10之工件1的功能。當使用攝像單元36時,能夠實施調整工件1相對加工頭34的位置之對準,以便能夠沿著工件1的切割道5進行雷射加工(燒蝕加工)。
The
作為由雷射加工單元32照射工件1的雷射光束,可使用例如以Nd:YAG等作為媒介振盪的波長355m之雷射光束。在工件1的雷射加工時,雷射光束以例如脈衝寬度40ns以下、頻率100kHz、輸出20W以下的條件振盪。在加工時,以工件1的加工進給速度700mm/s~1000mm/s、各切割道5中照射次數3~4次的條件對工件1照射該雷射光束。
As the laser beam irradiated on the
雷射加工裝置2在鄰接基台4上表面的卡匣載置台6之位置上具備保護膜塗佈兼清洗裝置38。保護膜塗佈兼清洗裝置38具有在加工前的工件1上表面塗佈水溶性的液狀樹脂以形成保護膜的功能,以及清洗加工後之工件1的功能。保護膜塗佈兼清洗裝置38具備放置工件1的工作台38a,以及將流體噴射至載置於工作台38a上的工件1之噴嘴38b。
The
工作台38a能夠繞沿著垂直於工件1載置面的方向之軸旋轉。噴嘴38b具有在工作台38a的外側於Z軸方向(垂直方向)上延伸的軸部,從軸部的上部向垂直於該Z軸方向的水平方向上延伸的本體,以及配設於該本體的前端朝向Z軸方向下方的排出口。該排出口藉由該軸部旋轉而能夠在工作台38a的上方於水平方向上移動。
The table 38a is rotatable about an axis along a direction perpendicular to the mounting surface of the
噴嘴38b形成為管線狀,將從連接於該軸部下部的供給源供給之液體送到該排出口,並能夠從排出口將該液體排出至保持在工作台38a上的工件1。噴嘴38b將例如作為保護工件1的正面1a之保護膜材料的水溶性液狀樹脂,或清洗該正面1a的清洗液排出至工件1。再者,噴嘴38b也可以排出液體與氣體的混合流體至工件1。
The
當由雷射加工單元32沿著切割道5對工件1進行雷射加工(燒蝕加工)時,從由雷射加工去除的部分產生被稱作碎片的加工屑,並飛濺於工件1上而附著在正面1a。一旦附著到正面1a上的碎片,即使清洗工件1,要完全去除也是不容易的。
When the
於是,在實施工件1的雷射加工前藉由保護膜塗佈兼清洗裝置38供給水溶性的液狀樹脂到正面1a,以形成作為保護膜功能的水溶性樹脂膜。如此一來,即使碎片飛濺於工件1的正面1a上,除了由雷射加工所形成的加工槽,該碎片由於附著在水溶性樹脂膜上而不會附著在該正面1a上。
Then, before the laser processing of the
在雷射加工實施後,清洗液藉由保護膜塗佈兼清洗裝置38被供給至工件1的正面上,雖是清洗工件1的正面側,此時,碎片藉由清洗液會與該水溶性樹脂膜一起被去除。
After the laser processing is implemented, the cleaning solution is supplied to the front of the
此外,在雷射加工裝置2的基台4上之鄰接該保護膜塗佈兼清洗裝置38的位置上,配設有蝕刻裝置40。蝕刻裝置40具備蝕刻腔室42,在蝕刻工件1時,工件1被搬入蝕刻腔室42中。蝕刻裝置40進一步具備,用於將蝕刻腔室42的內部排氣之排氣單元44,以及從氣體供給源46a將二氟化氙氣體供給至蝕刻腔室42的氣體供給單元46。
In addition, an
在雷射加工裝置2的基台4之前部,配設有兼作顯示裝置及輸入裝置的附觸控面板之顯示器48。該附觸控面板之顯示器48顯示雷射加工裝置2的狀態,或加工狀況、加工條件等各種資訊。此外,雷射加工裝置2的使用者或者管理者等,藉由該附觸控面板之顯示器48對雷射加工裝置2輸入各種指示等。
On the front part of the
接著,詳細說明關於本實施方式之工件1的加工方法之各步驟。首先,實施在工件1的正面1a上形成作為保護膜功能的水溶性樹脂膜之保護膜形成步驟。使用搬送軌道8a及搬送裝置8等,將框架單元13狀態的工件1從放在卡匣載置台6的卡匣6a搬送到保護膜塗佈兼清洗裝置38的工作台38a上。
Next, each step of the machining method of the
接著,將噴嘴38b的排出口定位在工作台38a中央附近的上方,並一邊使工作台38a旋轉一邊從該排出口使水溶性的液狀樹脂排出至工件1的正面1a上。亦即,藉由旋轉塗佈法將該液狀樹脂塗佈至工件1的正面1a。
Next, the discharge port of the
圖3(A)是示意性顯示在工件上塗佈水溶性液狀樹脂之狀態的剖面圖。如圖3(A)所示,當將該液狀樹脂塗佈至工件1的正面1a時,形成作為保護膜功能的水溶性樹脂膜15。另外,如圖3(A)所示,工作台38a也可以具備把持框架單元13之框架11的夾具38c。
Fig. 3(A) is a cross-sectional view schematically showing a state in which a water-soluble liquid resin is coated on a workpiece. As shown in FIG. 3(A), when this liquid resin is applied to the front surface 1a of the
接著,實施沿著工件1的切割道5照射雷射光束以去除功能層3(參閱圖1)之雷射加工步驟。雷射加工步驟是藉由雷射加工單元32所實施。首先,藉由搬送裝置8使工件1移動至卡盤台10的保持面10a上。然後,以夾具10b把持框架11,並且透過膠膜9使卡盤台10吸引保持工件1。
Next, a laser processing step of irradiating a laser beam along the
接著,藉由攝像單元36拍攝工件1,檢測工件1的切割道5,以能夠沿著切割道5對工件1進行雷射加工的方式使卡盤台10移動及旋轉,並實施對準。圖3(B)是示意性顯示雷射加工步驟的剖面圖。如圖3(B)所示,一邊加工進給工件1,一邊將脈衝振盪之雷射光束34a從加工頭34照射至工件1的正面。
Next, the
當雷射光束34a沿著切割道5照射時,會沿著切割道5(參閱圖1)去除功能層3(參閱圖1)。在沿著一條切割道5實施雷射加工後,分度進給工件1,並沿著其他切割道5同樣地一個接一個實施雷射加工。在沿著平行並排於一個方向的切割道5實施雷射加工後,使卡盤台10繞垂直於保持面10a的軸旋轉,並沿著並排於其他方向的切割道5同樣地實施雷射加工。
When the
圖4(A)是放大並示意性顯示雷射光束34a照射之工件1的剖面圖。在雷射光束34a所照射的區域中形成有TEG7a。圖4(B)是放大並示意性顯示雷射加工步驟後之工件1的剖面圖。
FIG. 4(A) is an enlarged and schematic cross-sectional view of the
如圖4(B)所示,當對工件1進行雷射加工並去除功能層3時,形成加工槽3a並且矽基板1c會露出在該加工槽3a的底部。此時,露出在加工槽3a之底部的矽基板1c的正面上形成有微小的加工痕(未圖示)。又,當實施雷射加工時,雖然作為工件1的熔融物之加工屑7b(碎片)飛濺於工件1的正面,但在該加工屑7b中也包含來自TEG7a的銅。
As shown in FIG. 4(B), when laser processing is performed on the
在本實施方式之工件1的加工方法中,將二氟化氙氣體供給至工件1的正面以蝕刻露出在加工槽3a之矽基板1c的正面,並且將包含於加工屑7b的銅氟化以抑制加工屑7b的巨大化。由於蝕刻步驟是以蝕刻裝置40實施,在此之前,會實施將工件1容納至蝕刻裝置40之容納步驟。
In the processing method of the
在容納步驟中,藉由搬送裝置8等將該工件1搬送,並容納至蝕刻裝置40的蝕刻腔室42中。圖5(A)是示意性顯示容納步驟的剖面圖。在此,使用圖5(A)詳細說明關於蝕刻裝置40的構成。如圖5(A)所示,蝕刻裝置40具備在下方具有開口之大致凹狀的腔室蓋42a,以及配設於該腔室蓋42a下方的保持台42b。
In the housing step, the
保持台42b具備例如載置面,該載置面的直徑比被搬入蝕刻裝置40之框架單元13的直徑大,框架單元13狀態的工件1被放置在該載置面上。
此外,例如,腔室蓋42a之該開口的直徑比工件1的直徑大,且腔室蓋42a的外徑比框架11的內徑小。在圍繞腔室蓋42a之該開口的下表面,安裝有例如以彈性構件形成的O環形等之環狀的密封件42c。
The holding table 42 b has, for example, a placement surface whose diameter is larger than that of the
在將工件1容納至蝕刻腔室時,以框架單元13的中心重疊於保持台42b的中心及腔室蓋42a的中心之方式,將工件1載置於保持台42b上。然後,使腔室蓋42a下降。於是,該環狀的密封件42c接觸並密接於構成框架單元13的膠膜9,並形成被腔室蓋42a及保持台42b包圍而密封之區域。此區域成為蝕刻腔室42。
When storing the
在成為蝕刻腔室42之天花板的腔室蓋42a之上部,形成有一端連接至排氣單元44的排氣通道44b,以及一端連接至氣體供給單元46的供氣通道46b。排氣通道44b的另一端以及供氣通道46b的另一端,分別連通至蝕刻腔室42。在腔室蓋42a的內部,以將蝕刻腔室42分為上下的方式配設有網狀的氣體分散構件42d。
On the upper part of the
接著,實施蝕刻工件1的蝕刻步驟。使排氣單元44動作,並通過排氣通道44b將蝕刻腔室42的內部排氣。圖5(B)是示意性顯示蝕刻腔室42之排氣狀態的剖面圖。在蝕刻腔室42的內部充分排氣後,由排氣單元44停止排氣。
Next, an etching step of etching the
然後,使氣體供給單元46動作,通過供氣通道46b從氣體供給源46a將二氟化氙氣體導入蝕刻腔室42的內部。此時,二氟化氙氣體藉由氣體分散構件42d均勻地供給至工件1的正面上。該二氟化氙氣體,蝕刻已露出之矽基板1c的正面。圖6(A)是示意性顯示蝕刻步驟的剖面圖。
Then, the
在蝕刻步驟中由於不需要使二氟化氙氣體電漿化,在蝕刻裝置40中不需要使氣體電漿化的機構。雷射加工裝置2成為一種藉由裝置構成最小限度的複雜化而能夠進行工件的蝕刻之裝置。
Since it is not necessary to plasma the xenon difluoride gas in the etching step, the
之後,為了使蝕刻停止而將二氟化氙氣體從蝕刻腔室42中排出。圖6(B)是示意性顯示蝕刻腔室42之排氣狀態的剖面圖。藉由氣體供給單元46使二氟化氙氣體的供給停止,當排氣單元44動作以將二氟化氙氣體排出時,蝕刻結束。
Thereafter, xenon difluoride gas is exhausted from the
再者,蝕刻裝置40可以進一步具備獨立的排氣單元,也可以藉由該獨立的排氣單元將二氟化氙氣體排氣。由於二氟化氙氣體為強效的氟化劑,較佳為由專用的回收機構回收並進行適當的處理。
Furthermore, the
圖7(A)是放大並示意性顯示實施蝕刻步驟時之工件的剖面圖。矽基板1c容易被二氟化氙氣體46d蝕刻,而水溶性樹脂膜15則不容易被蝕刻。因此,在蝕刻步驟中矽基板1c被選擇性地蝕刻。
FIG. 7(A) is an enlarged and schematic cross-sectional view of the workpiece when an etching step is performed. The
圖7(B)是放大並示意性顯示蝕刻步驟後之工件1的剖面圖。在矽基板1c之正面上包含有於雷射加工步驟中形成的加工痕,若去除包含該加工痕之矽基板1c的正面,則在工件1被分割而形成的元件晶片上不會殘留加工痕,元件晶片的強度會提高。
FIG. 7(B) is an enlarged and schematic cross-sectional view showing the
此外,當二氟化氙氣體46d接觸到附著在工件1之正面上的包含銅之加工屑7b時,包含在加工屑7b中的銅會被氟化。由於當銅被氟化時其與大氣中的水分間的反應性會降低,所以能夠抑制加工屑7b的巨大化。
Furthermore, when the
在實施蝕刻步驟之後,實施將工件1從蝕刻腔室42中搬出之搬出步驟。圖8(A)是示意性顯示從蝕刻腔室42取出工件1之狀態的剖面圖。蝕刻腔室42具備例如未圖示的洩漏機構,大氣被導入至蝕刻腔室42內,並使氣壓相當於外部。接著,拉起腔室蓋42a,並將工件1搬出。
After performing the etching step, a carrying out step of carrying out the
此外,如圖8(B)所示,蝕刻裝置40也可以具備將氮氣供給至蝕刻腔室42的氣體源46c。圖8(B)是示意性顯示蝕刻裝置40之一例的剖面圖。當蝕刻腔室42的壓力相當於外部時,可以從氣體源46c將氮氣導入蝕刻腔室42。
In addition, as shown in FIG. 8(B) , the
在將大氣導入蝕刻腔室42的情況,大氣中包含的水分等會進入蝕刻腔室42且水會附著於腔室蓋42a之內壁等。於是,當欲使用蝕刻裝置40實施其他工件1之蝕刻時,會有無法實施適當的蝕刻之疑慮。相對於此,在將氮氣導入蝕刻腔室42的情況,能夠防止水等對蝕刻腔室42內部的侵入。
In the case where the atmosphere is introduced into the
在實施搬出步驟之後,實施清洗工件1之清洗步驟。圖9(A)是示意性顯示工件1之清洗的剖面圖。藉由搬送裝置8等將工件1從蝕刻裝置40再次搬送到保護膜塗佈兼清洗裝置38。接著,將噴嘴38b的排出口定位在工作
台38a中央附近的上方,並一邊使工作台38a旋轉一邊從該排出口使清洗液排出至工件1的正面1a上。
After carrying out the carrying-out step, a cleaning step of cleaning the
如圖9(A)所示,當使清洗液噴出至工件1的正面1a時,能夠從工件1的正面去除作為保護膜功能的水溶性樹脂膜15。圖9(B)是放大並示意性顯示清洗後之工件1的剖面圖。如圖9(B)所示,附著在水溶性樹脂膜15上的加工屑7b,與該水溶性樹脂膜15一起從工件1上被洗掉。
As shown in FIG. 9(A) , when the cleaning liquid is sprayed onto the front surface 1 a of the
另外,附著在露出於加工槽3a底部之矽基板1c上的加工屑7b,雖然在清洗步驟中有無法充分去除的情況,但在蝕刻步驟中包含在該加工屑7b中的銅已被氟化,由於已抑制加工屑7b的巨大化所以不會成為問題。其後,在沿著切割道5切割工件1時,該加工屑7b會被去除。
In addition, the
如同以上的說明,根據本實施方式之工件1的加工方法,當沿著切割道5去除功能層3時,即使從被雷射加工的TEG7a產生包含銅的加工屑7b,能夠藉由蝕刻步驟將銅氟化以抑制巨大化。此外,沿著切割道5已露出之矽基板1c包含加工痕的正面,由於藉由蝕刻步驟而被去除,能夠將工件1被分割所形成的元件晶片之強度提升。
As described above, according to the processing method of the
此外,本發明並不限定於上述實施方式的記載,能夠作各種變更以實施。例如,在上述實施方式中,雖已說明了關於在實施蝕刻步驟之後實施清洗步驟的情況,但本發明之一個形態的工件加工方法並不限定於此。例如,也可以在實施蝕刻步驟之前實施清洗步驟。 In addition, this invention is not limited to description of said embodiment, It can change variously and can implement. For example, in the above-mentioned embodiments, the case where the cleaning step is performed after the etching step has been described, the workpiece processing method of one aspect of the present invention is not limited thereto. For example, a cleaning step may also be performed before performing the etching step.
在此情況下,由於藉由實施清洗步驟作為保護膜功能的水溶性樹脂膜15被從工件1的正面1a上去除,所以在蝕刻步驟中功能層3的上表面會曝露於二氟化氙氣體中。然而,由於二氟化氙氣體對於矽基板1c較功能層3的選擇性較高,所以能夠適當地蝕刻因雷射加工而殘留加工痕的矽基板1c之正面。
In this case, since the water-
其他,上述實施方式的構造、方法等,在不脫離本發明目的之範圍下,可作適當變更以實施。 In addition, the structures, methods, etc. of the above-mentioned embodiments can be implemented with appropriate changes without departing from the scope of the purpose of the present invention.
1‧‧‧工件 1‧‧‧Workpiece
9‧‧‧膠膜 9‧‧‧Film
11‧‧‧框架 11‧‧‧Framework
13‧‧‧框架單元 13‧‧‧Frame unit
40‧‧‧蝕刻裝置 40‧‧‧Etching device
42‧‧‧蝕刻腔室 42‧‧‧Etching chamber
42a‧‧‧腔室蓋 42a‧‧‧chamber cover
42b‧‧‧保持台 42b‧‧‧Holding table
42c‧‧‧片構件 42c‧‧‧piece component
42b‧‧‧氣體分散構件 42b‧‧‧Gas dispersion components
44‧‧‧排氣單元 44‧‧‧exhaust unit
44b‧‧‧排氣通道 44b‧‧‧Exhaust channel
46‧‧‧氣體供給單元 46‧‧‧gas supply unit
46a‧‧‧氣體供給源 46a‧‧‧gas supply source
46b‧‧‧供氣通道 46b‧‧‧air supply channel
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CN111168250A (en) * | 2020-02-28 | 2020-05-19 | 浙江亿程科技有限公司 | Marking machine capable of realizing automatic marking of self-locking nut |
CN113084355A (en) * | 2021-03-05 | 2021-07-09 | 深圳市福浪电子有限公司 | Laser marking device for crystal oscillator production and processing |
CN113894427A (en) * | 2021-09-01 | 2022-01-07 | 苏州瀚川智能科技股份有限公司 | Automatic laser activation device for IC belt |
KR102507019B1 (en) | 2022-10-05 | 2023-03-07 | 주식회사 아이티아이 | Laser processing and etching apparatus and method |
CN117697166B (en) * | 2024-02-06 | 2024-04-19 | 中国工程物理研究院激光聚变研究中心 | Method for etching organic film on surface of metal film by utilizing laser |
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KR102582783B1 (en) | 2023-09-25 |
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