CN111415863B - Wafer processing method - Google Patents
Wafer processing method Download PDFInfo
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- CN111415863B CN111415863B CN202010008606.5A CN202010008606A CN111415863B CN 111415863 B CN111415863 B CN 111415863B CN 202010008606 A CN202010008606 A CN 202010008606A CN 111415863 B CN111415863 B CN 111415863B
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- protective film
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- 238000012545 processing Methods 0.000 claims abstract description 194
- 230000001681 protective effect Effects 0.000 claims abstract description 151
- 238000005520 cutting process Methods 0.000 claims abstract description 38
- 125000006850 spacer group Chemical group 0.000 claims abstract description 31
- 238000009501 film coating Methods 0.000 claims abstract description 29
- 239000007888 film coating Substances 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 230000001678 irradiating effect Effects 0.000 claims abstract description 16
- 239000011248 coating agent Substances 0.000 claims abstract description 4
- 238000000576 coating method Methods 0.000 claims abstract description 4
- 239000000463 material Substances 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 7
- 238000005253 cladding Methods 0.000 claims description 2
- 238000004140 cleaning Methods 0.000 description 13
- 239000002390 adhesive tape Substances 0.000 description 6
- 238000003384 imaging method Methods 0.000 description 6
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- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
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- 229910052594 sapphire Inorganic materials 0.000 description 1
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- 229910052710 silicon Inorganic materials 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3043—Making grooves, e.g. cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/18—Working by laser beam, e.g. welding, cutting or boring using absorbing layers on the workpiece, e.g. for marking or protecting purposes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/362—Laser etching
- B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Laser Beam Processing (AREA)
- Dicing (AREA)
- Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Provided is a wafer processing method capable of suppressing adhesion of chips to a device. The wafer processing method comprises the following steps: a protective film coating step (ST 1) for coating the laminated body of the wafer with the protective film; a1 ST laser processing step (ST 3) of irradiating laser beams to both ends of the spacer in the width direction to form two laser processing grooves in the spacer; a2 nd laser processing step (ST 4) of removing the laminated body between the two laser processing grooves together with the protective film by irradiating a laser beam along the streets; a cutting step (ST 5) of cutting the region of the spacer where the substrate is exposed by the cutting tool; and a protective film removing step (ST 2) for removing the protective film by irradiating a laser beam to the inner side of the spacer from the position where the two laser processing grooves are formed after the protective film coating step (ST 1) and before the 1 ST laser processing step (ST 3).
Description
Technical Field
The present invention relates to a method for processing a wafer having a laminate laminated on a substrate and having a plurality of intersecting streets having a predetermined width.
Background
As a method of dividing a wafer having devices formed in regions divided by a plurality of intersecting streets into individual devices, the following processing method has been proposed (for example, see patent document 1): in order to prevent adhesion of fragments generated by the laser processing, the front surface of the wafer is covered with a protective film before the laser processing is performed, and the wafer is divided into individual devices by the laser processing.
In the processing method shown in patent document 1, the device includes a Low dielectric constant insulating film (hereinafter referred to as a Low-k film), two laser processing grooves are formed by laser processing at both ends in the width direction of the streets in order to prevent peeling of the Low-k film, and thereafter, the center in the width direction of the streets is cut by a cutting tool.
Patent document 1: japanese patent laid-open No. 2005-64230
However, in the processing method disclosed in patent document 1, when cutting the center in the width direction of the spacer where at least one of the TEG (TEST ELEMENTS Group) and the Low-k film is laminated, clogging of the cutting tool due to the TEG or the Low-k film occurs. Therefore, a processing method of removing a laminated body such as a TEG or a Low-k film by irradiating a laser beam between two laser processing grooves before cutting a wafer with a cutting tool is considered.
However, in the processing method disclosed in patent document 1, when two laser processing grooves are formed, peeling of the protective film occurs at both ends in the width direction of the laser processing grooves due to the impact of the laser beam, that is, peeling of the protective film occurs so as to reach the device across the streets. The processing method of irradiating a laser beam between two laser processing grooves has the following problems: when a wafer having a protective film peeled off and having an upper surface of a device exposed is processed, fragments generated by irradiation of a laser beam adhere to the upper surface of the device exposed by peeling off the protective film.
Disclosure of Invention
The present invention has been made in view of the above-described problems, and an object of the present invention is to provide a method for processing a wafer capable of suppressing adhesion of chips to a device.
In order to solve the above problems and achieve the object, a wafer processing method according to the present invention is a wafer processing method for processing a wafer, in which a laminate is laminated on a substrate, the wafer has a plurality of streets, the streets have a predetermined width, the wafer processing method comprising: a protective film coating step of coating the front surface of the laminate with a protective film; a1 st laser processing step of irradiating a laser beam along a spacer in a state in which the laser beam is condensed at both ends in the width direction of the spacer on the inner side of the spacer after the protective film cladding step is performed, and forming two laser processing grooves in the spacer; a2 nd laser processing step of removing the laminated body between the two laser processing grooves together with the protective film by irradiating a laser beam along the streets after the 1 st laser processing step is performed, and exposing the base material; and a cutting step of cutting the region of the spacer where the substrate is exposed by a cutting tool after the 2 nd laser processing step is performed, the processing method of the wafer having the following protective film removing step: after the protective film coating step is performed and before the 1 st laser processing step is performed, laser beams are irradiated along the streets in a state in which the laser beams are condensed at two points which are located inside the streets and are arranged in the width direction of the streets than the positions at which the two laser processing grooves are formed, and at least the protective film in the region including the positions at which the two laser processing grooves are formed is removed.
In the method for processing a wafer, the laser beam may be irradiated under the same conditions in the protective film removing step and the 1 st laser processing step.
The wafer processing method of the present invention has the effect of suppressing adhesion of fragments to devices.
Drawings
Fig. 1 is a perspective view showing an example of a wafer to be processed in the wafer processing method according to embodiment 1.
Fig. 2 is a cross-sectional view of a major portion of the wafer shown in fig. 1.
Fig. 3 is a flowchart showing a flow of a wafer processing method according to embodiment 1.
Fig. 4 is a perspective view showing a configuration example of a laser processing apparatus used in the processing method of the wafer shown in fig. 3.
Fig. 5 is a side sectional view showing a protective film coating step of the processing method of the wafer shown in fig. 3.
Fig. 6 is a side sectional view showing a protective film removal step of the processing method of the wafer shown in fig. 3.
Fig. 7 is a cross-sectional view of a main portion of a wafer showing a protective film removal step of the processing method of the wafer shown in fig. 3.
Fig. 8 is a cross-sectional view showing a main portion of the wafer after a protective film removal step of the processing method of the wafer shown in fig. 3.
Fig. 9 is a plan view showing a main portion of the wafer after a protective film removal step of the processing method of the wafer shown in fig. 3.
Fig. 10 is a cross-sectional view of a main portion of a wafer showing a1 st laser processing step of the processing method of the wafer shown in fig. 3.
Fig. 11 is a cross-sectional view showing a main portion of a wafer after the 1 st laser processing step of the processing method of the wafer shown in fig. 3.
Fig. 12 is a plan view showing a main portion of a wafer after the 1 st laser processing step of the processing method of the wafer shown in fig. 3.
Fig. 13 is a cross-sectional view of a main portion of a wafer showing a 2 nd laser processing step of the processing method of the wafer shown in fig. 3.
Fig. 14 is a cross-sectional view of a main portion of a wafer showing a cutting step of the processing method of the wafer shown in fig. 3.
Description of the reference numerals
1: A wafer; 2: a substrate; 3: a laminate; 4: a spacer; 4-1: a region; 5: a device; 6: a protective film; 9: a laser processing groove; 200: a laser beam; 210: a laser beam; 300: a cutting tool; ST1: a protective film coating step; ST2: a protective film removing step; ST3: a 1 st laser processing step; ST4: a2 nd laser processing step; ST5: and (3) a cutting step.
Detailed Description
The mode (embodiment) for carrying out the present invention will be described in detail with reference to the accompanying drawings. The present invention is not limited to the following embodiments. The following components include substantially the same components that can be easily understood by those skilled in the art. The structures described below can be appropriately combined. Various omissions, substitutions, and changes in the structure may be made without departing from the spirit of the invention.
A method for processing a wafer according to embodiment 1 of the present invention will be described with reference to the accompanying drawings. Fig. 1 is a perspective view showing an example of a wafer to be processed in the wafer processing method according to embodiment 1. Fig. 2 is a cross-sectional view of a major portion of the wafer shown in fig. 1. Fig. 3 is a flowchart showing a flow of a wafer processing method according to embodiment 1.
The wafer processing method according to embodiment 1 is the wafer 1 processing method shown in fig. 1. In embodiment 1, the wafer 1 is a disk-shaped semiconductor wafer or an optical device wafer using silicon, sapphire, gallium arsenide, or the like as the substrate 2. As shown in fig. 1 and 2, a wafer 1 has a substrate 2, and a laminate 3 is laminated on the substrate 2. In addition, the wafer 1 has: a plurality of spacers 4 having a prescribed width and intersecting each other; and devices 5 respectively formed in regions divided by the intersecting plural streets 4. In embodiment 1, the laminate 3 includes a Low dielectric constant insulating film (hereinafter referred to as a Low-k film). In the present invention, the laminate 3 may include not only a Low-k film but also a wiring layer other than the Low-k film.
The device 5 is an IC (INTEGRATED CIRCUIT: integrated circuit) or LSI (LARGE SCALE Integration: large scale integrated circuit) or the like. The device 5 comprises: a wiring layer forming a circuit made of metal or the like; and a Low-k film that supports the wiring layer. The Low-k film is a film that constitutes the device 5 and serves as an interlayer insulating film. In embodiment 1, a wafer 1 is laminated with a laminate 3 on a substrate 2 of a spacer 4.
In the present invention, a metal such as a TEG (TESTELEMENTS GROUP: test element group) not shown may be partially formed as a laminate on the streets 4. The TEG is an element for evaluation for finding out design or manufacturing problems occurring in the device 5, and has an electrode pad made of metal on the front surface. The TEGs are arbitrarily arranged according to the type of the wafer 1 and the like.
The wafer processing method according to embodiment 1 is a method of dividing the wafer 1 into the devices 5 by forming laser processing grooves 9 at both ends in the width direction of each street 4 of the wafer 1 and then cutting between the laser processing grooves 9. The laser processing groove 9 according to the present invention is formed by irradiating the laminate 3 and the substrate 2 with a laser beam 200 having a wavelength that is absorptive to the laminate 3 and the substrate 2, and removing a part of the laminate 3 and the substrate 2 at a position that is separated from the end in the width direction of the spacer 4 by a predetermined distance 400. The predetermined distance 400 is a distance that is as short as possible to ensure a cutting margin when cutting between the laser processing grooves 9, and that can suppress the influence of the heat of the laser beam 200 on the device 5 as much as possible (the extent to which the desired performance of the device 5 can be ensured). That is, the laser processing groove 9 is formed by performing ablation processing on a part of the substrate 2 and the laminate 3 by irradiating the laser beam 200, and is formed at a position near the end in the width direction of the streets 4 within a range in which the influence of the heat of the laser beam 200 on the device 5 can be suppressed to a degree in which the desired performance of the device 5 can be ensured. In embodiment 1, the predetermined distance 400 is several μm or more and 10 μm or less, for example, 7 μm.
As shown in fig. 3, the wafer processing method includes a protective film coating step ST1, a protective film removing step ST2, a1 ST laser processing step ST3, a2 nd laser processing step ST4, and a cutting step ST5. The wafer processing method uses the laser processing apparatus 20 shown in fig. 4 in the protective film coating step ST1, the protective film removing step ST2, the 1 ST laser processing step ST3, and the 2 nd laser processing step ST 4. Next, in this specification, the laser processing apparatus 20 will be described.
(Laser processing device)
Fig. 4 is a perspective view showing a configuration example of a laser processing apparatus used in the processing method of the wafer shown in fig. 3. As shown in fig. 4, the laser processing apparatus 20 mainly includes an apparatus main body 21, a chuck table 30, a laser beam irradiation unit 40, an imaging unit 50, an X-axis movement unit 60, a Y-axis movement unit 70, a protective film coating cleaning unit 80, a conveyance unit 90, and a control unit 100.
The chuck table 30 has a disk shape, and the holding surface 31 for holding the wafer 1 is formed of porous ceramics or the like. The chuck table 30 is provided so as to be movable in the X-axis direction by the X-axis moving unit 60 and rotatable about an axis parallel to the Z-axis direction along the vertical direction by the rotation driving source 32. The chuck table 30 mounts the back surface 12 side of the back side of the laminate 3 of the wafer 1 on the holding surface 31. The holding surface 31 of the chuck table 30 is connected to a vacuum suction source, not shown, and suctions and holds the back surface 12 side of the wafer 1 by being suctioned by the vacuum suction source.
The laser beam irradiation unit 40 is disposed so as to face the wafer 1 held by the chuck table 30. The laser beam irradiation unit 40 irradiates the laser beam 200 having absorbability to the wafer 1 along each of the streets 4, thereby performing ablation processing on the wafer 1. The laser beam irradiation unit 40 is attached to the front end of the support column 23, and the support column 23 is connected to the wall 22 erected from the apparatus main body 21. The laser beam irradiation unit 40 includes an optical system which is formed of a lens or the like and can adjust the position of the focal point of the laser beam 200 in the Z-axis direction.
The imaging unit 50 photographs the wafer 1 held by the chuck table 30, and in embodiment 1, the imaging unit 50 is disposed at a position parallel to the laser beam irradiation unit 40 in the X-axis direction. In embodiment 1, the imaging unit 50 is mounted on the front end of the support column 23. The image pickup unit 50 includes an image pickup device such as a CCD (Charge Coupled Device: charge coupled device). The image pickup unit 50 outputs an image captured by the image pickup element to the control unit 100.
The X-axis moving unit 60 moves the chuck table 30 in the X-axis direction. The Y-axis moving unit 70 moves the chuck table 30 in the Y-axis direction. The X-axis moving unit 60 and the Y-axis moving unit 70 have: known ball screws 61 and 71 rotatably provided around an axis; known pulse motors 62, 72 for rotating the ball screws 61, 71 around their axes; and known guide rails 63, 73 for supporting the chuck table 30 so as to be movable in the X-axis direction or the Y-axis direction.
The protective film coating cleaning unit 80 coats the protective film 6 (shown in fig. 6 and the like) on the front surface of the laminate 3 of the wafer 1, and cleans the front surface of the wafer 1 to remove the protective film 6. The protective film coating cleaning unit 80 includes: a rotary table 81 for sucking and holding the back surface 12 side of the wafer 1 and rotating around an axis parallel to the Z-axis direction; a protective film solution supply nozzle 82 for supplying a water-soluble protective film solution 7 (shown in fig. 5) to the front surface of the laminate 3 of the wafer 1 held by the rotary table 81; and a cleaning liquid supply nozzle 83 for supplying cleaning liquid such as pure water to the front surface of the wafer 1 held by the spin table 81.
The transport unit 90 transports the wafer 1 between the chuck table 30 and the rotary table 81 of the protective film coating and cleaning unit 80. The conveying unit 90 includes: a ball screw 91 fixed to the wall 22 of the device main body 21 and parallel to the X-axis direction; a guide rail 92 disposed parallel to the ball screw 91; a pulse motor 93 coupled to one end of the ball screw 91 to rotate the ball screw 91; and a slide plate 94 having one end slidably connected to the guide rail 92 and having a nut (not shown) screwed to the ball screw 91 therein. In the conveying unit 90, the slide plate 94 is guided by the guide rail 92 to move in the X-axis direction in accordance with the rotation of the ball screw 91. A holding portion 95 for holding the wafer 1 by suction is provided at the lower end portion of the slide plate 94 so as to be able to move up and down.
The control unit 100 controls the above-described components of the laser processing apparatus 20, respectively, so that the laser processing apparatus 20 performs a processing operation for the wafer 1. In addition, the control unit 100 is a computer. The control unit 100 has: an arithmetic processing device having a microprocessor such as a CPU (central processing unit: central processing unit); a storage device having a memory such as a ROM (read only memory) or a RAM (random accessmemory: random access memory); and an input/output interface device.
The arithmetic processing device of the control unit 100 performs arithmetic processing according to a computer program stored in a storage device, and outputs a control signal for controlling the laser processing device 20 to the above-described constituent elements of the laser processing device 20 via an input-output interface device. The control unit 100 is connected to a display unit that displays a state of a machining operation, an image, and the like, and an input unit that is used when an operator registers machining content information and the like. The input unit is configured by at least one of a touch panel provided in the display unit and an external input device such as a keyboard.
In this specification, each step of the wafer processing method according to embodiment 1 will be described below. In embodiment 1, when the control unit 100 receives processing content information from an operator and places the wafer 1 on the rotary table 81 of the protective film coating and cleaning unit 80 and receives a processing operation start instruction from the operator, the laser processing device 20 sequentially performs the protective film coating step ST1, the protective film removing step ST2, the 1 ST laser processing step ST3, and the 2 nd laser processing step ST4.
(Protective film coating step)
Fig. 5 is a side sectional view showing a protective film coating step of the processing method of the wafer shown in fig. 3. The protective film coating step ST1 is a step of coating the front surface of the laminate 3 of the wafer 1 with the protective film 6.
In embodiment 1, in the protective film coating step ST1, as shown in fig. 5, the laser processing apparatus 20 suctions and holds the back surface 12 side of the wafer 1 on the rotary table 81 of the protective film coating cleaning unit 80. In embodiment 1, the wafer 1 is supported by the annular frame 11 with the adhesive tape 10 having an outer peripheral edge attached to the annular frame 11 attached to the back surface 12 of the substrate 2. Therefore, in the protective film coating step ST1, the laser processing apparatus 20 suctions and holds the wafer 1 on the rotary table 81 via the adhesive tape 10, and clamps the annular frame 11 by the clamp portion 84 around the rotary table 81.
In the protective film coating step ST1, the laser processing apparatus 20 applies the water-soluble protective film solution 7 from the protective film solution supply nozzle 82 to the front surface of the wafer 1 while rotating the rotary table 81 around the axis. The water-soluble protective film solution 7 is composed of a water-soluble liquid resin such as polyvinyl alcohol (polyvinyl alcohol: PVA) or polyvinylpyrrolidone (polyvinylpyrrolidone: PVP), and preferably contains fine particles of a metal oxide such as titanium dioxide for improving the absorption efficiency of the laser beam.
In the protective film coating step ST1, after the water-soluble protective film solution 7 is applied to the front surface of the laminate 3 of the wafer 1, the protective film solution 7 is dried or heated to be cured, and as shown in fig. 6, the protective film 6 formed by curing the protective film solution 7 is coated on the entire front surface of the laminate 3 of the wafer 1. When the protective film 6 is coated on the entire front surface of the wafer 1, the suction and holding of the wafer 1 by the rotary table 81 and the clamping of the annular frame 11 by the clamping portion 84 are released, the wafer 1 is transferred from the rotary table 81 to the chuck table 30 by the transfer unit 90, and the wafer processing method proceeds to the protective film removing step ST2.
(Protective film removal step)
Fig. 6 is a side sectional view showing a protective film removal step of the processing method of the wafer shown in fig. 3. Fig. 7 is a cross-sectional view of a main portion of a wafer showing a protective film removal step of the processing method of the wafer shown in fig. 3. Fig. 8 is a cross-sectional view showing a main portion of the wafer after a protective film removal step of the processing method of the wafer shown in fig. 3. Fig. 9 is a plan view showing a main portion of the wafer after a protective film removal step of the processing method of the wafer shown in fig. 3.
The protective film removing step ST2 is a step of removing the protective film 6 at least at both ends in the width direction of each spacer 4 after the protective film coating step ST1 is performed and before the 1 ST laser processing step ST3 is performed. In the protective film removing step ST2, the laser processing apparatus 20 suctions and holds the back surface 12 side of the wafer 1, the front surface of which is covered with the protective film 6, on the chuck table 30 via the adhesive tape 10, and clamps the ring frame 11 by the clamp portion 33. In the protective film removing step ST2, the laser processing apparatus 20 photographs the wafer 1 held by the chuck table 30 with the imaging unit 50, and performs alignment for aligning the wafer 1 with the laser beam irradiation unit 40.
In the protective film removing step ST2, the laser processing apparatus 20 irradiates the laser beam 200 having a wavelength absorbing to the protective film 6 and the wafer 1 from the laser beam irradiation unit 40 to the end portions of the streets 4 in the width direction while relatively moving the end portions of the streets 4 in the width direction and the laser beam irradiation unit 40 along the streets 4 by the X-axis movement unit 60, the Y-axis movement unit 70, and the rotation driving source 32, as shown in fig. 6.
In the protective film removing step ST2, as shown in fig. 7, the laser processing device 20 sets the converging point 201 of the laser beam 200 inside the protective film 6, and sequentially irradiates the both widthwise ends of all the streets 4 with the laser beam 200, thereby performing ablation processing on the both widthwise ends of all the streets 4. In the protective film removing step ST2, as shown in fig. 8 and 9, the laser processing device 20 removes at least the protective films 6 at both ends in the width direction of the streets 4 to form laminate exposure grooves 8 in which all the laminates 3 at both ends of the streets 4 are exposed. That is, in the protective film removing step ST2, the laser processing device 20 forms two laminated body exposing grooves 8 in each of the streets 4. In embodiment 1, in the protective film removing step ST2, the laser processing device 20 removes a part of the protective film 6, the laminate 3, and the base material 2 in each of the streets 4 to form the laminate exposure groove 8. However, in the present invention, the protective film 6 may be removed only to form the laminate exposure groove 8 when the protective film 6 has sufficient absorbability to the laser beam 200, or the protective film 6 may be removed to form the laminate exposure groove 8 by irradiating the laminate 3 with the laser beam 200 to ablate the laminate 3 when the protective film 6 has little absorbability to the laser beam 200 and the laminate 3 has absorbability to the laser beam 200. When neither the protective film 6 nor the laminate 3 is absorptive, the laminate exposure groove 8 is formed by irradiating the base material 2 with the laser beam 200 to ablate the base material 2, thereby removing a part of the base material 2, the laminate 3, and the protective film 6. In the protective film removing step ST2, the laser beam 200 is irradiated from the laser processing apparatus 20 at a position farther than the predetermined distance 400 from both ends of the streets 4, and the peeled portion of the protective film 6 does not reach the outside of the streets 4 (i.e., the device 5) even if the protective film 6 is peeled off by irradiation of the laser beam 200.
In fig. 8 and 9, in the protective film removing step ST2, the protective film 6 is removed from both ends in the width direction of the streets 4, and a part of the laminate 3 and the base material 2 is removed. In short, in the protective film removing step ST2, as long as the protective film 6 at both ends in the width direction of the streets 4 can be removed and the protective film 6 is not peeled off outside the streets 4, the present invention may remove only the protective film 6, may remove a part of the protective film 6 and the laminate 3, and may remove a part of the protective film 6, the laminate 3, and the base material 2. In the protective film removing step ST2, the laser processing device 20 forms the laminate exposure groove 8 at a position farther than the predetermined distance 400 from both ends of the streets 4.
In embodiment 1, the processing conditions in the protective film removal step ST2 are as follows: the wavelength of the laser beam 200 is 355nm, the output of the laser beam 200 is 1W, the repetition frequency of the laser beam 200 is 200kHz, the spot diameter of the converging point 201 of the laser beam 200 is about 10 μm, and the relative movement speed of the laser beam irradiation unit 40 and the wafer 1 is 400mm/sec. In this way, the laser beam output of the processing conditions in the protective film removal step ST2 in the processing method of the wafer of embodiment 1 is weaker than the processing conditions in the conventional processing method in which the protective film 6 at both ends in the width direction of each spacer 4 and the laminate 3 are removed to expose the base material 2 to form the laser processing groove 9. When two laminate exposure grooves 8 are formed in all the streets 4, the processing method of the wafer proceeds to the 1 ST laser processing step ST3. Fig. 9 shows the laminate exposure grooves 8 formed in the streets 4 parallel to the left-right direction, and omits the laminate exposure grooves 8 formed in the streets 4 parallel to the up-down direction.
(1 St laser processing step)
Fig. 10 is a cross-sectional view of a main portion of a wafer showing a1 st laser processing step of the processing method of the wafer shown in fig. 3. Fig. 11 is a cross-sectional view showing a main portion of a wafer after the 1 st laser processing step of the processing method of the wafer shown in fig. 3. Fig. 12 is a plan view showing a main portion of a wafer after the 1 st laser processing step of the processing method of the wafer shown in fig. 3.
The 1 ST laser processing step ST3 is a step of: after the protective film coating step ST1 and the protective film removing step ST2 are performed, the laser beam 200 is irradiated along the streets 4 in a state in which the laser beam 200 is focused on both ends of the streets 4 in the width direction on the inner side of the streets 4, respectively, and two laser processing grooves 9 are formed in the streets 4. In the 1 ST laser processing step ST3, the laser processing apparatus 20 irradiates the laser beam 200 having a wavelength absorbing to the protective film 6 and the wafer 1 from the laser beam irradiation unit 40 to the end portions of the respective streets 4 in the width direction while relatively moving the end portions of the respective streets 4 in the width direction and the laser beam irradiation unit 40 along the streets 4 by the X-axis movement unit 60, the Y-axis movement unit 70, and the rotational drive source 32.
In the 1 ST laser processing step ST3, as shown in fig. 10, the laser processing device 20 sets the converging point 201 of the laser beam 200 on the upper surface of the laminate 3, and irradiates the laser beam 200 at a position where the laminate is exposed in the groove 8 and the end in the width direction is located closer to the protective film removing step ST 2. In the 1 ST laser processing step ST3, the laser processing device 20 ablates the laminate 3 exposed in the laminate exposure groove 8 at both ends in the width direction of all the streets 4. In the 1 ST laser processing step ST3, as shown in fig. 11 and 12, the laser processing device 20 removes at least the laminate 3 exposed in the laminate exposure grooves 8 at both ends in the width direction of the streets 4, and forms laser processing grooves 9 exposing the base material 2 in the laminate exposure grooves 8 at both ends of all the streets 4. That is, in the 1 ST laser processing step ST3, the laser processing device 20 forms two laser processing grooves 9 in each of the streets 4.
In fig. 11 and 12, in step ST3 of the 1 ST laser processing, an example is shown in which the laminate 3 in the laminate exposure groove 8 at both ends in the width direction of the streets 4 and a part of the base material 2 are removed, but the present invention may remove only the laminate 3 in the laminate exposure groove 8 at both ends in the width direction of the streets 4. In short, in the 1 ST laser processing step ST3, as long as the laminate 3 in the laminate exposure groove 8 at both ends in the width direction of the spacer 4 can be removed, the present invention may remove only the laminate 3 or may remove a part of the laminate 3 and the base material 2. In embodiment 1, since the protective film 6 is more easily peeled than the laminate 3, the width of the laminate exposure groove 8 is shown as being wider than the width of the laser processing groove 9 in fig. 11 and 12.
In the 1 ST laser processing step ST3, the laser processing device 20 irradiates the laser beam 200 at a position which is exposed in the groove 8 of the laminate and is closer to the end in the width direction than the protective film removing step ST2, and which is farther than the predetermined distance 400 from the both ends of the streets 4. Thus, the protective film removing step ST2 irradiates the laser beam 200 along the streets 4 in a state in which the laser beam 200 is condensed at2 points which are located on the inner side in the width direction of the streets 4 than the positions at which the two laser processing grooves 9 are formed and are aligned in the width direction of the streets 4. In addition, the protective film removing step ST2 removes at least the protective film 6 in the region including the positions where the two laser processing grooves 9 are formed. In embodiment 1, in the 1 ST laser processing step ST3, the laser processing device 20 forms the laser processing groove 9 at a position spaced apart from both ends of the spacer 4 by a predetermined distance 400.
In embodiment 1, the processing conditions in the 1 ST laser processing step ST3 are as follows: the wavelength of the laser beam 200 was 355nm, the output of the laser beam 200 was 1.3W, the repetition frequency of the laser beam 200 was 200kHz, the spot diameter of the converging point 201 of the laser beam 200 was about 10 μm, and the relative movement speed of the laser beam irradiation unit 40 and the wafer 1 was 400mm/sec. In this way, the laser beam 200 is irradiated under the same condition as the first laser processing step ST3 in the protective film removing step ST2 of the wafer processing method of embodiment 1. When two laser processing grooves 9 are formed in all of the streets 4, the processing method of the wafer proceeds to the 2 nd laser processing step ST4.
(Step 2 laser processing)
Fig. 13 is a cross-sectional view of a main portion of a wafer showing a2 nd laser processing step of the processing method of the wafer shown in fig. 3. The 2 nd laser processing step ST4 is a step of: after the 1 ST laser processing step ST3 is performed, the laminated body 3 between the two laser processing grooves 9 is removed together with the protective film 6 by irradiating the laser beam 210 along the streets 4, thereby exposing the base material 2 between the two laser processing grooves 9.
In the 2 nd laser processing step ST4, the laser processing apparatus 20 irradiates the laser beam 210 having a wavelength absorbing to the protective film 6 and the wafer 1 from the laser beam irradiation unit 40 toward the center in the width direction of each street 4 while relatively moving the center in the width direction of each street 4 and the laser beam irradiation unit 40 along the street 4 by the X-axis movement unit 60, the Y-axis movement unit 70, and the rotational drive source 32.
In the 2 nd laser processing step ST4, as shown in fig. 13, the laser processing device 20 irradiates the laser beam 210 toward the center in the width direction of the streets 4 by forming the width 211 of the laser beam 210 on the laminate 3 to be larger than the distance 9-1 between the inner edges of the two laser processing grooves 9 and smaller than the distance 9-2 between the outer edges of the two laser processing grooves 9. In the 2 nd laser processing step ST4, the laser processing device 20 irradiates the laser beam 210 toward the center in the width direction of the streets 4, thereby performing ablation processing on the protective film 6, the laminate 3, and the base material 2 between the two laser processing grooves 9 of the streets 4. In the 2 nd laser processing step ST4, the laser processing device 20 removes the protective film 6, the laminated body 3, and a part of the base material 2 between the two laser processing grooves 9 at the center in the width direction of the spacer 4.
In the 2 nd laser processing step ST4, the laser processing device 20 expands the laser beam 210 in the width direction of the streets 4 by using a mask to form and irradiate the laser beam 210 having the width 211, but in the present invention, when the length of the streets 4 in the width direction of the laser beam 210 after forming is shorter than the width to be removed, the laser beam 210 may be moved in the width direction to perform a plurality of times of processing, or the laser beam 200 may be irradiated with a normal laser beam 200 to perform processing (normal processing is repeated a plurality of times in the width direction of the streets 4), or the laser beam 200 may be branched and condensed at a plurality of points to perform processing.
In embodiment 1, in the 2 nd laser processing step ST4, only the protective film 6 and the laminate 3 between the two laser processing grooves 9 at the center in the width direction of the streets 4 are removed, but the present invention may also remove a part of the base material 2 between the two laser processing grooves 9 at the center in the width direction of the streets 4. In short, in the 2 nd laser processing step ST4, as long as the protective film 6 and the laminate 3 between the two laser processing grooves 9 at the center in the width direction of the spacer 4 can be removed, the present invention may remove only the protective film 6 and the laminate 3, or may remove a part of the base material 2 in addition to the protective film 6 and the laminate 3.
In embodiment 1, the processing conditions in the 2 nd laser processing step ST4 are as follows: the wavelength of the laser beam 210 is 355nm, the output of the laser beam 210 is 3W to 5W, the repetition frequency of the laser beam 210 is 40kHz, the length of the condensed light spot in the width direction of the streets 4 is 211 μm, the length in the extending direction of the streets 4 is about 10 μm, and the relative moving speed of the laser beam irradiation unit 40 and the wafer 1 is 600mm/sec. In this way, the output of the laser beam 210 of the processing condition in the 2 nd laser processing step ST4 of the wafer processing method of embodiment 1 is stronger than the output of the laser beam of the processing condition in the protective film removing step ST2 and the 1 ST laser processing step ST 3. In the 2 nd laser processing step ST4, when the protective film 6 and the laminated body 3 between the two laser processing grooves 9 of all the streets 4 are removed, the laser processing apparatus 20 cleans the wafer 1 by the protective film coating cleaning unit 80, removes the protective film 6, and proceeds to the dicing step ST5.
(Cutting step)
Fig. 14 is a cross-sectional view of a main portion of a wafer showing a cutting step of the processing method of the wafer shown in fig. 3. The cutting step ST5 is a step of cutting the region 4-1 of the spacer 4 where the substrate 2 is exposed by the cutting tool 300 after the 2 nd laser processing step ST4 is performed.
In embodiment 1, in the cutting step ST5, as shown in fig. 14, the cutting device 301 suctions and holds the back surface 12 side of the wafer 1 on the chuck table via the adhesive tape 10, and clamps the ring frame 11 by the clamp portion. In the cutting step ST5, the cutting device 301 photographs the wafer 1 held by the chuck table with the imaging unit, thereby performing alignment of the wafer 1 with the cutting tool 300. In embodiment 1, the thickness 300-1 of the cutting tool 300 is smaller than the width 4-2 of the region 4-1 of each spacer 4 where the base material 2 is exposed.
In the cutting step ST5, the cutting device 301 cuts the cutting tool 300 into the wafer 1 until reaching the adhesive tape 10 while relatively moving the wafer 1 and the cutting tool 300 along each of the streets 4, thereby dividing the wafer 1 into the devices 5. When the cutting tool 300 is made to cut into all the streets 4, the processing method of the wafer ends. In addition, after the wafer 1 divided into the individual devices 5 is cleaned by a cleaning unit or the like to remove the chips, the individual devices 5 are picked up from the adhesive tape 10. In embodiment 1, the laser processing apparatus 20 cleans the wafer 1 with the protective film coating and cleaning means 80 to remove the protective film 6 in the 2 nd laser processing step ST4, but in the present invention, the laser processing apparatus 20 may clean the wafer 1 with the protective film coating and cleaning means 80 instead of the 2 nd laser processing step ST4, and clean the wafer 1 with the cleaning means or the like to remove the protective film 6 after the cutting step ST 5.
In the wafer processing method according to embodiment 1, before forming two laser processing grooves in the 1 ST laser processing step ST3, the protective film removing step ST2 irradiates the streets 4 with the laser beam 200, and two laminate exposure grooves 8 from which the protective films 6 are removed are formed at both ends in the width direction of the streets 4. In the wafer processing method according to embodiment 1, in the 1 ST laser processing step ST3, the laser beam 200 is irradiated to the laminate exposure groove 8 to remove the laminate 3, thereby forming the laser processing groove 9. That is, in the wafer processing method according to embodiment 1, it is necessary to form the laminate exposure groove 8 farther than the predetermined distance 400 from the end portion at both end portions in the width direction of the streets 4 for all the streets 4, and then form the laser processing groove 9 at the end portion closer to the laminate exposure groove 8. Therefore, in the processing method of the wafer according to embodiment 1, the laser beam 200 is not irradiated to the protective film 6 in the 1 ST laser processing step ST3, and thus peeling of the protective film 6 does not occur. That is, the wafer processing method according to embodiment 1 suppresses peeling of the protective film 6 beyond the width of the streets 4.
In the wafer processing method according to embodiment 1, in the 2 nd laser processing step ST4, the laser beam 200 is irradiated between the two laser processing grooves 9 from which the laminated body 3 is removed. In the wafer processing method according to embodiment 1, the chips generated in the step ST4 of the 2 nd laser processing are scattered outside the streets 4, but the protective film 6 is covered outside the streets 4, so that the chips are not adhered to the upper surface of the device 5. As a result, in the wafer processing method, even in the wafer 1 in which the laminate 3 is laminated on the base material 2 and the protective film 6 is coated before laser processing, adhesion of chips to the device 5 can be suppressed.
In addition, since the laser beam 200 output of the processing conditions in the protective film removing step ST2 of the processing method of the wafer of embodiment 1 is weaker than the processing conditions of the conventional processing method in which the laser processing groove 9 is formed initially, peeling of the protective film 6 after the protective film removing step ST2 can be suppressed. In addition, since the processing method of the wafer according to embodiment 1 irradiates the laser beam 200 at the inner side of the 1 ST laser processing step ST3 in the width direction of the streets 4 in the protective film removing step ST2, even if the protective film 6 is peeled off in the protective film removing step ST2, it is possible to suppress the peeled portion of the protective film 6 from reaching the device 5 which is the outer side of the streets 4.
The present invention is not limited to the above embodiment. That is, the present invention can be variously modified and implemented within a range not departing from the gist of the present invention. In embodiment 1, it is necessary to form a laminate exposure groove 8 at both ends in the width direction of the spacer 4 and further from the ends than a predetermined distance 400 for all the spacers 4, and then form a laser processing groove 9at the end of the laminate exposure groove 8. However, in the present invention, the laminate exposure groove 8 may be formed at the both ends in the width direction of the spacer 4 with respect to at least one spacer 4 at a distance 400 from the end, and then the laser processing groove 9 may be formed at a position closer to the end than the laminate exposure groove 8. In embodiment 1, the condition of irradiating the laser beam 200 in the protective film removing step ST2 is different from the condition of irradiating the laser beam 200 in the 1 ST laser processing step ST3, but the present invention may irradiate the laser beam 200 in the same condition in the protective film removing step ST2 and the 1 ST laser processing step ST 3.
Claims (2)
1. A wafer processing method in which a laminate is laminated on a substrate and a plurality of streets having a predetermined width are provided,
The wafer processing method comprises the following steps:
A protective film coating step of coating the front surface of the laminate with a protective film;
A1 st laser processing step of irradiating a laser beam along a spacer in a state in which the laser beam is condensed at both ends in the width direction of the spacer on the inner side of the spacer after the protective film cladding step is performed, and forming two laser processing grooves in the spacer;
a 2 nd laser processing step of removing the laminated body between the two laser processing grooves together with the protective film by irradiating a laser beam along the streets after the 1 st laser processing step is performed, and exposing the base material; and
A cutting step of cutting the region of the spacer where the substrate is exposed by a cutting tool after the 2 nd laser processing step is performed,
The wafer processing method comprises the following protective film removing steps: after the protective film coating step is performed and before the 1 st laser processing step is performed, laser beams are irradiated along the streets in a state in which the laser beams are condensed at two points which are located inside the streets and are arranged in the width direction of the streets than the positions at which the two laser processing grooves are formed, and at least the protective film in the region including the positions at which the two laser processing grooves are formed is removed.
2. The method for processing a wafer according to claim 1, wherein,
The laser beam is irradiated under the same conditions in the protective film removing step and the 1 st laser processing step.
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| CN1803374A (en) * | 2005-01-13 | 2006-07-19 | 株式会社迪斯科 | Method of laser processing a wafer |
| JP2011151090A (en) * | 2010-01-19 | 2011-08-04 | Disco Abrasive Syst Ltd | Cutting method |
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| JP2020109815A (en) | 2020-07-16 |
| TWI820282B (en) | 2023-11-01 |
| CN111415863A (en) | 2020-07-14 |
| JP7193350B2 (en) | 2022-12-20 |
| KR20200085647A (en) | 2020-07-15 |
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