TW201932224A - Processing method, etching device, and laser processing device the processing method including a laser processing step, an accommodating step and an etching step - Google Patents

Processing method, etching device, and laser processing device the processing method including a laser processing step, an accommodating step and an etching step Download PDF

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TW201932224A
TW201932224A TW108102139A TW108102139A TW201932224A TW 201932224 A TW201932224 A TW 201932224A TW 108102139 A TW108102139 A TW 108102139A TW 108102139 A TW108102139 A TW 108102139A TW 201932224 A TW201932224 A TW 201932224A
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workpiece
etching
functional layer
silicon substrate
processing
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TWI784121B (en
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高橋宏行
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日商迪思科股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/03—Observing, e.g. monitoring, the workpiece
    • B23K26/032—Observing, e.g. monitoring, the workpiece using optical means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/0823—Devices involving rotation of the workpiece
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/083—Devices involving movement of the workpiece in at least one axial direction
    • B23K26/0853—Devices involving movement of the workpiece in at least in two axial directions, e.g. in a plane
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/14—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor
    • B23K26/142—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor for the removal of by-products
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/16—Removal of by-products, e.g. particles or vapours produced during treatment of a workpiece
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/18—Working by laser beam, e.g. welding, cutting or boring using absorbing layers on the workpiece, e.g. for marking or protecting purposes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/362—Laser etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/362—Laser etching
    • B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/70—Auxiliary operations or equipment
    • B23K26/702—Auxiliary equipment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching

Abstract

To remove the processing marks generated on the workpiece. A workpiece processing method is provided. The workpiece has a silicon substrate and a functional layer formed on the silicon substrate. The workpiece is formed, in each region divided by a plurality of intersecting cutting lines set on the front surface, with components that include the functional layer. The workpiece processing method includes: a laser processing step of irradiating a front side of the workpiece along the cutting lines with a laser beam having a wavelength absorbable to the functional layer to remove the functional layer, and causing the silicon substrate to expose along the cutting lines; an accommodating step of accommodating the workpiece in an etching chamber after the laser processing step; and an etching step of supplying xenon difluoride gas to the front side of the workpiece after the accommodating step and etching along the cutting lines to remove the front side of the exposed silicon substrate.

Description

加工方法、蝕刻裝置以及雷射加工裝置Processing method, etching device and laser processing device

本發明是關於加工方法、蝕刻裝置以及雷射加工裝置。The present invention relates to a processing method, an etching apparatus, and a laser processing apparatus.

在配備有半導體元件之IC晶片等的元件晶片中，近年來，介電係數低的所謂Low-k材料被用作為元件中所使用的配線層間的層間絕緣膜等。當Low-k膜用於層間絕緣膜時，能夠降低形成於配線層間的寄生電容，且能夠提高元件晶片的處理能力等。作為Low-k膜，已知有SiOF、SiOB（硼矽酸鹽玻璃）等無機物類之膜，或聚醯亞胺類、對二甲苯類等聚合物膜即有機物類之膜。In element wafers such as IC wafers equipped with semiconductor elements, in recent years, a so-called Low-k material having a low dielectric constant has been used as an interlayer insulating film or the like between wiring layers used in the element. When a Low-k film is used for an interlayer insulating film, it is possible to reduce parasitic capacitance formed between wiring layers, and to improve the processing capability of an element wafer. As the Low-k film, films of inorganic materials such as SiOF and SiOB (borosilicate glass), or films of organic materials such as polymer films such as polyimide and paraxylene are known.

元件晶片是例如藉由在圓板狀的矽基板之正面上層積配線層或層間絕緣膜等的功能層以形成元件，並沿著以劃分各元件之方式所設定的多條被稱作切割道的分割預定線將該矽基板分割所形成。矽基板的分割是例如藉由圓環狀的切割刀片沿著該切割道切割矽基板來執行。An element wafer is formed by laminating functional layers such as a wiring layer or an interlayer insulating film on the front surface of a disc-shaped silicon substrate to form an element, and a plurality of lines that are set to divide each element are called scribe lines. The dividing line is formed by dividing the silicon substrate. The division of the silicon substrate is performed by, for example, cutting the silicon substrate along the dicing path with a circular cutting blade.

然而，由於Low-k膜是非常脆弱的膜，當藉由切割刀片切割形成有Low-k膜的矽基板時，會使得Low-k膜從矽基板剝離，且剝離直達元件而在該元件上產生損傷。於是，有一種通過藉由雷射光束照射的燒蝕加工部分地去除功能層，並沿著該切割道形成比功能層厚度要深的加工槽，其後，沿著該切割道由切割刀片進行切割的工件分割方法被提出（參閱專利文獻1）。
[習知技術文獻]
[專利文獻]However, since the Low-k film is a very fragile film, when the silicon substrate on which the Low-k film is formed is cut by a dicing blade, the Low-k film is peeled from the silicon substrate, and the direct-on device is peeled off on the device. Cause damage. Therefore, there is a method in which a functional layer is partially removed by an ablation process irradiated with a laser beam, and a processing groove deeper than the thickness of the functional layer is formed along the cutting path, and thereafter, a cutting blade is performed along the cutting path. A method of dividing a cut workpiece is proposed (see Patent Document 1).
[Xizhi technical literature]
[Patent Literature]

[專利文獻1] 日本特開2005-64230號公報[Patent Document 1] Japanese Patent Laid-Open No. 2005-64230

[發明所欲解決的課題]
然而，當通過燒蝕加工形成加工槽時，該加工槽的底部到達矽基板，會在露出的矽基板之正面產生微小的加工痕。因此，存在下述問題：加工痕殘留在分割矽基板所形成的元件晶片上，且由該加工痕造成元件晶片的抗折強度低下。[Problems to be Solved by the Invention]
However, when a processing groove is formed by ablation processing, the bottom of the processing groove reaches the silicon substrate, and minute processing marks are generated on the front surface of the exposed silicon substrate. Therefore, there is a problem that a processing mark remains on an element wafer formed by dividing a silicon substrate, and the bending strength of the element wafer is lowered by the processing mark.

本發明是鑑於此問題而提出，其目的在於提供一種能夠去除產生在工件上的加工痕之加工方法、蝕刻裝置以及雷射加工裝置。The present invention has been made in view of this problem, and an object thereof is to provide a processing method, an etching apparatus, and a laser processing apparatus capable of removing a processing mark generated on a workpiece.

[解決課題的技術手段]
根據本發明之一個形態，提供一種工件加工方法，該工件具有矽基板以及形成在該矽基板上的功能層，且該工件在設定於正面的多條交叉切割道所劃分的各區域中形成有包含該功能層的元件；該工件加工方法之特徵在於具備：雷射加工步驟，從工件之正面側沿著該切割道照射對功能層具有吸收性之波長的雷射光束以去除該功能層，並使該矽基板沿著該切割道露出；容納步驟，在該雷射加工步驟之後，將該工件容納於蝕刻腔室中；以及蝕刻步驟，在該容納步驟之後，將二氟化氙氣體供給至該工件的正面，並沿著該切割道蝕刻以去除已露出之矽基板的正面。[Technical means to solve the problem]
According to an aspect of the present invention, a workpiece processing method is provided. The workpiece has a silicon substrate and a functional layer formed on the silicon substrate, and the workpiece is formed in each area divided by a plurality of cross cutting lines set on the front surface. An element including the functional layer; the workpiece processing method is characterized by having a laser processing step of irradiating a laser beam having a wavelength absorptive to the functional layer from the front side of the workpiece along the cutting path to remove the functional layer, And exposing the silicon substrate along the dicing path; an accommodating step, after the laser processing step, accommodating the workpiece in an etching chamber; and an etching step, after the accommodating step, supplying xenon difluoride gas Go to the front side of the workpiece and etch along the dicing track to remove the front side of the exposed silicon substrate.

較佳為，該功能層中包含有銅，且在該雷射加工步驟中，由於雷射光束的照射自該功能層產生包含銅之加工屑，並在該蝕刻步驟中，藉由該二氟化氙氣體使該加工屑所包含之該銅的表面氟化。Preferably, the functional layer contains copper, and in the laser processing step, processing dust containing copper is generated from the functional layer due to the irradiation of the laser beam, and in the etching step, the difluoride is used Xenon gas fluorinates the surface of the copper contained in the machining chips.

此外，根據本發明之另一形態，提供一種蝕刻工件的蝕刻裝置，該工件具有矽基板以及形成在該矽基板上的功能層，且該工件在設定於正面的多條交叉切割道所劃分的各區域中形成有包含該功能層的元件，並被以對該功能層具有吸收性之波長的雷射光束照射，而沿著該切割道去除該功能層使該矽基板露出；該蝕刻裝置之特徵在於具備：蝕刻腔室，容納該工件；排氣單元，將該蝕刻腔室內的空氣排出；以及氣體供給單元，將二氟化氙氣體供給至該蝕刻腔室內。In addition, according to another aspect of the present invention, an etching device for etching a workpiece is provided. The workpiece has a silicon substrate and a functional layer formed on the silicon substrate, and the workpiece is divided by a plurality of cross cutting lines set on the front surface. An element including the functional layer is formed in each region, and is irradiated with a laser beam having a wavelength absorptive to the functional layer, and the functional layer is removed along the dicing path to expose the silicon substrate; It is characterized by comprising: an etching chamber that houses the workpiece; an exhaust unit that exhausts air in the etching chamber; and a gas supply unit that supplies xenon difluoride gas into the etching chamber.

根據本發明之又一個形態，提供一種對工件進行雷射加工之雷射加工裝置，該工件具有矽基板以及形成在該矽基板上的功能層，且該工件在設定於正面的多條交叉切割道所劃分的各區域中形成有包含該功能層的元件；該雷射加工裝置之特徵在於具備：卡盤台，其保持該工件；雷射光束照射單元，其將對該功能層具有吸收性之波長的雷射光束從被保持在該卡盤台上的工件之正面側沿著該切割道照射，藉此去除該功能層，以沿著該切割道使矽基板露出；以及蝕刻單元，其將二氟化氙氣體供給至工件，並沿著該切割道蝕刻已露出之矽基板的正面。According to another aspect of the present invention, a laser processing device for laser processing a workpiece is provided. The workpiece has a silicon substrate and a functional layer formed on the silicon substrate. An element including the functional layer is formed in each area divided by the track. The laser processing device is characterized by: a chuck table that holds the workpiece; and a laser beam irradiation unit that is absorbing to the functional layer A laser beam of a wavelength is irradiated from the front side of the workpiece held on the chuck table along the dicing path, thereby removing the functional layer to expose the silicon substrate along the dicing path; and an etching unit, which Xenon difluoride gas is supplied to the workpiece, and the exposed front surface of the silicon substrate is etched along the dicing path.

[發明功效]
根據本發明的一個形態，雷射光束沿著切割道照射在形成有功能層之矽基板的正面上以去除該功能層。然後，將沿著該切割道已露出矽基板之工件容納至蝕刻腔室中，並提供二氟化氙氣體至工件。於是，蝕刻並去除包含已露出之矽基板的加工痕之正面。因此，藉由沿著切割道分割工件所形成的元件晶片上不會殘留加工痕，而元件晶片的強度增強。[Inventive effect]
According to an aspect of the present invention, a laser beam is irradiated onto a front surface of a silicon substrate on which a functional layer is formed along a dicing path to remove the functional layer. Then, the workpiece having the silicon substrate exposed along the dicing path is accommodated in the etching chamber, and xenon difluoride gas is provided to the workpiece. Then, the front side of the processing mark including the exposed silicon substrate is etched and removed. Therefore, no processing marks remain on the element wafer formed by dividing the workpiece along the dicing path, and the strength of the element wafer is enhanced.

用於工件蝕刻之二氟化氙氣體，在工件蝕刻時不需要電漿化。從而，實施蝕刻的蝕刻裝置不需要配備用於電漿化的構造，而能夠容易地將該蝕刻裝置配備於雷射加工裝置中。當使用配備有蝕刻裝置的雷射加工裝置時，能夠在實施雷射加工步驟後快速地實施蝕刻步驟。Xenon difluoride gas used for workpiece etching does not require plasmaization during workpiece etching. Therefore, it is not necessary to equip the etching apparatus which performs etching with the structure for plasma formation, and it is easy to equip this etching apparatus with a laser processing apparatus. When a laser processing device equipped with an etching device is used, the etching step can be performed quickly after the laser processing step is performed.

從而，根據本發明，提供一種能夠去除產生在工件上的加工痕之加工方法、蝕刻裝置以及雷射加工裝置。Therefore, according to the present invention, there are provided a processing method, an etching apparatus, and a laser processing apparatus capable of removing processing marks generated on a workpiece.

首先，說明關於本實施方式的加工方法之工件。圖1是示意性顯示工件1的立體圖。工件1包含矽基板1c，以及形成於該矽基板1c上的功能層3。在工件1之正面1a上，設定有交叉的多條被稱作切割道5之分割預定線，藉由該切割道5所劃分之各區域中形成有IC（Integrated Circuit，積體電路）等的元件7。最後，藉由工件1被沿著切割道5分割，形成為各個元件晶片。First, a workpiece related to the processing method of the present embodiment will be described. FIG. 1 is a perspective view schematically showing a workpiece 1. The workpiece 1 includes a silicon substrate 1c and a functional layer 3 formed on the silicon substrate 1c. On the front side 1a of the work 1, a plurality of predetermined division lines called cutting lines 5 are set, and ICs (Integrated Circuits, etc.) are formed in each area divided by the cutting lines 5. Element 7. Finally, the workpiece 1 is divided along the scribe lines 5 to form individual element wafers.

在工件1的背面上，黏貼有被擴張在金屬製的框架11上的膠膜9。工件1在與膠膜9和框架11成為一體之框架單元13的狀態下被搬送並加工。在工件1被分割並形成為各個元件晶片時，該元件晶片是由於通過膠膜9的支撐而不會飛濺。An adhesive film 9 expanded on a metal frame 11 is adhered to the back surface of the work 1. The workpiece 1 is conveyed and processed in a state where the frame unit 13 is integrated with the adhesive film 9 and the frame 11. When the workpiece 1 is divided and formed into individual element wafers, the element wafers are not spattered by being supported by the adhesive film 9.

膠膜9具有：具有可撓性之薄膜狀的基板，以及形成在該基板之一邊的面上的漿糊層（接著劑層）。例如，PO（Polyolefin，聚烯烴）可用作基材。也可以使用較PO剛性高的PET（Polyethylene terephthalate，聚對苯二甲酸乙二酯）、聚氯乙烯（Polyvinylchloride）、聚苯乙烯（Polystyrene）等。此外，在漿糊層（接著劑層）中，可使用例如矽橡膠、丙烯酸系材料、環氧樹脂系材料等。The adhesive film 9 includes a flexible thin film substrate and a paste layer (adhesive layer) formed on one side of the substrate. For example, PO (Polyolefin) can be used as the substrate. Polyethylene terephthalate (Polyethylene terephthalate), polyvinyl chloride (Polyvinylchloride), and polystyrene (Polystyrene), which are more rigid than PO, can also be used. In addition, for the paste layer (adhesive layer), for example, a silicone rubber, an acrylic material, an epoxy resin material, or the like can be used.

元件7具有包含多層的配線層以及絕緣各配線層之間的層間絕緣膜之功能層3。近年來，為了降低形成在配線層間的寄生電容，低介電係數之所謂的Low-k膜被使用在層間絕緣膜等中。作為Low-k膜，已知有SiOF、SiOB（硼矽酸鹽玻璃）等無機物類之膜或聚醯亞胺類、對二甲苯類等聚合物膜即有機物類之膜。The element 7 includes a functional layer 3 including a plurality of wiring layers and an interlayer insulating film that insulates between the wiring layers. In recent years, in order to reduce parasitic capacitance formed between wiring layers, a so-called Low-k film having a low dielectric constant is used in an interlayer insulating film or the like. As the Low-k film, a film of an inorganic substance such as SiOF, SiOB (borosilicate glass), or a film of an organic substance, such as a polymer film such as polyimide or paraxylene, is known.

由於Low-k膜是非常脆弱的膜，當藉由切割刀片切割在正面形成有包含Low-k膜之功能層3的矽基板1c時，會使得Low-k膜從矽基板1c剝離，且剝離直達元件7而在該元件7上產生損傷。於是，在以切割刀片切割工件1之前，會藉由預先雷射加工（燒蝕加工）沿著切割道5去除功能層3。Since the Low-k film is a very fragile film, when the silicon substrate 1c including the functional layer 3 containing the Low-k film is formed on the front surface by a cutting blade, the Low-k film is peeled from the silicon substrate 1c and peeled Damage is caused to the element 7 by reaching the element 7 directly. Therefore, before cutting the workpiece 1 with a cutting blade, the functional layer 3 is removed along the cutting path 5 by a laser process (ablation process) in advance.

然而，若實施雷射加工，則矽基板1c會露出並在正面產生微小的加工痕。因此，存在下述問題：分割矽基板1c所形成的元件晶片上會殘留加工痕，且元件晶片的抗折強度降低。However, if laser processing is performed, the silicon substrate 1c is exposed and minute processing marks are generated on the front surface. Therefore, there are problems in that processing marks remain on the element wafer formed by dividing the silicon substrate 1c, and the flexural strength of the element wafer is reduced.

此外，近年來，包含元件7的半導體元件之高度積體化趨勢顯著，為了使該元件7的消耗電力減少或使訊號的傳輸速度提升，在配線層中使用低阻抗的銅。In addition, in recent years, there has been a significant trend toward high integration of semiconductor elements including the element 7. In order to reduce the power consumption of the element 7 or increase the signal transmission speed, low-impedance copper is used in the wiring layer.

在工件1中形成有用於元件7的檢查等之被稱作TEG（Test Element Group，測試元件群）的測試用電路，且該TEG中也使用包含銅的配線層。TEG有時僅使用在工件1的分割之前，在此情況下，由於即使是形成在因工件1的分割而會失去的區域中也沒有問題，所以例如形成在與切割道5重疊的區域中。因此，在藉由雷射加工沿著切割道5形成加工槽時，也對包含銅的TEG實施雷射加工。A test circuit called a TEG (Test Element Group) is formed in the workpiece 1 for the inspection of the element 7 and the like, and a wiring layer containing copper is also used in the TEG. The TEG may be used only before the division of the workpiece 1. In this case, the TEG is formed in an area overlapping the cutting line 5 because there is no problem even if it is formed in an area that is lost due to the division of the workpiece 1. Therefore, when a processing groove is formed along the scribe line 5 by laser processing, laser processing is also performed on TEG including copper.

當對包含銅的TEG進行雷射加工時，會產生包含銅的加工屑（碎片），並且一部分的該加工屑會殘留在因加工而沿著切割道5露出之矽基板1c上。由於該加工屑所包含的銅會逐漸地與空氣中的水分反應，當加工屑巨大化且到達元件7的形成區域的情況下，會成為一個問題。When laser processing is performed on a copper-containing TEG, processing chips (chips) containing copper are generated, and a part of the processing chips remains on the silicon substrate 1c exposed along the scribe line 5 due to processing. Since copper contained in the machining chips gradually reacts with moisture in the air, it becomes a problem when the machining chips become large and reach the formation region of the element 7.

於是，在本實施方式的工件加工方法中，在實施雷射加工後，蝕刻矽基板1c所露出的正面，並且使加工屑所包含的銅之反應性降低。圖2是示意性顯示實施該工件1的加工方法之雷射加工裝置2的立體圖。使用圖2說明關於該雷射加工裝置2之構成。Therefore, in the workpiece processing method of the present embodiment, after laser processing is performed, the exposed front surface of the silicon substrate 1c is etched, and the reactivity of copper contained in the processing chips is reduced. FIG. 2 is a perspective view schematically showing a laser processing apparatus 2 that executes the processing method of the workpiece 1. The structure of this laser processing apparatus 2 is demonstrated using FIG.

雷射加工裝置2具備吸引保持框架單元13狀態的工件1之卡盤台10，以及配設在該卡盤台10上方的雷射加工單元32。The laser processing apparatus 2 includes a chuck table 10 that sucks and holds the workpiece 1 in a state of the frame unit 13, and a laser processing unit 32 that is disposed above the chuck table 10.

雷射加工裝置2具備配設在基台4上表面的前角部之卡匣載置台6。在卡匣載置台6上載置有容納多個工件1的卡匣6a。此外，雷射加工裝置2具備用於將框架單元13狀態的工件1搬送至基台4上方的搬送裝置8，以及搬送軌道8a。The laser processing apparatus 2 includes a cassette mounting table 6 disposed at a front corner portion of the upper surface of the base table 4. A cassette 6 a that accommodates a plurality of workpieces 1 is placed on the cassette mounting table 6. In addition, the laser processing apparatus 2 is provided with the conveying apparatus 8 for conveying the workpiece | work 1 in the state of the frame unit 13 above the base 4, and the conveyance rail 8a.

在雷射加工裝置2之基台4的上表面，配設有具備Y軸導軌14、Y軸移動板16、Y軸滾珠螺桿18以及Y軸脈衝馬達20的Y軸移動機構（分度進給機構）12。在基台4的上表面設置有在Y軸方向上平行的一對Y軸導軌14，且Y軸移動板16可滑動地安裝在Y軸導軌14上。On the upper surface of the base 4 of the laser processing apparatus 2, a Y-axis moving mechanism (index feed) including a Y-axis guide 14, a Y-axis moving plate 16, a Y-axis ball screw 18, and a Y-axis pulse motor 20 is arranged. Agency) 12. A pair of Y-axis guides 14 that are parallel in the Y-axis direction are provided on the upper surface of the base 4, and the Y-axis moving plate 16 is slidably mounted on the Y-axis guide 14.

在Y軸移動板16的下表面側設置有螺帽部（未圖示），在此螺帽部上，螺合有平行於Y軸導軌14的Y軸滾珠螺桿18。在Y軸滾珠螺桿18的一端上連結有Y軸脈衝馬達20。當藉由Y軸脈衝馬達20使Y軸滾珠螺桿18旋轉時，Y軸移動板16沿著Y軸導軌14在Y軸方向上移動。A nut portion (not shown) is provided on the lower surface side of the Y-axis moving plate 16, and a Y-axis ball screw 18 parallel to the Y-axis guide 14 is screwed to the nut portion. A Y-axis pulse motor 20 is connected to one end of the Y-axis ball screw 18. When the Y-axis ball screw 18 is rotated by the Y-axis pulse motor 20, the Y-axis moving plate 16 moves along the Y-axis guide 14 in the Y-axis direction.

在Y軸移動板16的上表面，配設有具備X軸導軌24、X軸移動板26、X軸滾珠螺桿28以及X軸脈衝馬達（未圖示）的X軸移動機構（加工進給機構）22。在Y軸移動板16的上表面設置有在X軸方向上平行的一對X軸導軌24，且X軸移動板26可滑動地安裝在X軸導軌24上。On the upper surface of the Y-axis moving plate 16, an X-axis moving mechanism (processing feed mechanism) including an X-axis guide 24, an X-axis moving plate 26, an X-axis ball screw 28 and an X-axis pulse motor (not shown) is disposed )twenty two. A pair of X-axis guides 24 that are parallel in the X-axis direction are provided on the upper surface of the Y-axis moving plate 16, and the X-axis moving plate 26 is slidably mounted on the X-axis guide 24.

在X軸移動板26的下表面側設置有螺帽部（未圖示），在此螺帽部上，螺合有平行於X軸導軌24的X軸滾珠螺桿28。在X軸滾珠螺桿28的一端上連結有X軸脈衝馬達。當藉由X軸脈衝馬達使X軸滾珠螺桿28旋轉時，X軸移動板26沿著X軸導軌24在X軸方向上移動。A nut portion (not shown) is provided on the lower surface side of the X-axis moving plate 26, and an X-axis ball screw 28 parallel to the X-axis guide 24 is screwed to the nut portion. An X-axis pulse motor is connected to one end of the X-axis ball screw 28. When the X-axis ball screw 28 is rotated by the X-axis pulse motor, the X-axis moving plate 26 moves along the X-axis guide 24 in the X-axis direction.

在X軸移動板26之上，配設有卡盤台10。卡盤台10在上表面側具有多孔質構件（未圖示）。多孔質構件的上表面成為保持工件1的保持面10a。卡盤台10可繞垂直於保持面10a的軸旋轉。A chuck table 10 is arranged on the X-axis moving plate 26. The chuck table 10 has a porous member (not shown) on the upper surface side. The upper surface of the porous member is a holding surface 10 a that holds the workpiece 1. The chuck table 10 is rotatable about an axis perpendicular to the holding surface 10a.

卡盤台10具有連接至多孔質構件的吸引源（未圖示）。工件1透過膠膜9被載置於保持面10a上，當通過多孔質構件的孔使吸引源所產生的負壓對工件1作用時，工件1會被吸引保持在卡盤台10上。此外，在卡盤台10的周圍，具備固定構成框架單元13的框架11之夾具10b。The chuck table 10 has a suction source (not shown) connected to the porous member. The workpiece 1 is placed on the holding surface 10 a through the adhesive film 9. When the negative pressure generated by the suction source acts on the workpiece 1 through the hole of the porous member, the workpiece 1 is sucked and held on the chuck table 10. Further, around the chuck table 10, a jig 10b for fixing the frame 11 constituting the frame unit 13 is provided.

在雷射加工裝置2的基台4上表面之後部，配設有支撐雷射加工單元32的支撐部30。配設於支撐部30上部的雷射加工單元32具備：配設於卡盤台10上方的加工頭34，以及配設於鄰接該加工頭34之位置的攝像單元36。A support portion 30 that supports the laser processing unit 32 is disposed behind the upper surface of the abutment 4 of the laser processing device 2. The laser processing unit 32 disposed on the upper portion of the support portion 30 includes a processing head 34 disposed above the chuck table 10 and an imaging unit 36 disposed adjacent to the processing head 34.

雷射加工單元32進行對形成在工件1上的功能層3具有吸收性之波長的雷射光束之脈衝振盪，並具有將該雷射光束聚光在保持於卡盤台10之工件1上的功能。攝影單元36具有拍攝保持於卡盤台10之工件1的功能。當使用攝像單元36時，能夠實施調整工件1相對加工頭34的位置之對準，以便能夠沿著工件1的切割道5進行雷射加工（燒蝕加工）。The laser processing unit 32 performs pulse oscillation of a laser beam having an absorptive wavelength on the functional layer 3 formed on the workpiece 1 and has a function of condensing the laser beam on the workpiece 1 held on the chuck table 10 Features. The photographing unit 36 has a function of photographing the workpiece 1 held on the chuck table 10. When the camera unit 36 is used, alignment of the position of the workpiece 1 relative to the processing head 34 can be adjusted so that laser processing (ablation processing) can be performed along the cutting path 5 of the workpiece 1.

作為由雷射加工單元32照射工件1的雷射光束，可使用例如以Nd：YAG等作為媒介振盪的波長355m之雷射光束。在工件1的雷射加工時，雷射光束以例如脈衝寬度40ns以下、頻率100kHz、輸出20W以下的條件振盪。在加工時，以工件1的加工進給速度700mm／s～1000mm／s、各切割道5中照射次數3～4次的條件對工件1照射該雷射光束。As the laser beam that irradiates the workpiece 1 by the laser processing unit 32, for example, a laser beam having a wavelength of 355 m that is oscillated with Nd: YAG or the like as a medium can be used. During laser processing of the workpiece 1, the laser beam oscillates under conditions such as a pulse width of 40 ns or less, a frequency of 100 kHz, and an output of 20 W or less. During processing, the laser beam is irradiated to the workpiece 1 under the conditions that the processing feed speed of the workpiece 1 is 700 mm / s to 1000 mm / s, and the number of irradiations in each cutting lane 5 is 3 to 4 times.

雷射加工裝置2在鄰接基台4上表面的卡匣載置台6之位置上具備保護膜塗佈兼清洗裝置38。保護膜塗佈兼清洗裝置38具有在加工前的工件1上表面塗佈水溶性的液狀樹脂以形成保護膜的功能，以及清洗加工後之工件1的功能。保護膜塗佈兼清洗裝置38具備放置工件1的工作台38a，以及將流體噴射至載置於工作台38a上的工件1之噴嘴38b。The laser processing device 2 includes a protective film coating and cleaning device 38 at a position adjacent to the cassette mounting table 6 on the upper surface of the base table 4. The protective film coating and cleaning device 38 has a function of applying a water-soluble liquid resin on the upper surface of the workpiece 1 before processing to form a protective film, and a function of cleaning the processed workpiece 1. The protective film coating and cleaning device 38 includes a table 38 a on which the work 1 is placed, and a nozzle 38 b that ejects fluid to the work 1 placed on the table 38 a.

工作台38a能夠繞沿著垂直於工件1載置面的方向之軸旋轉。噴嘴38b具有在工作台38a的外側於Z軸方向（垂直方向）上延伸的軸部，從軸部的上部向垂直於該Z軸方向的水平方向上延伸的本體，以及配設於該本體的前端朝向Z軸方向下方的排出口。該排出口藉由該軸部旋轉而能夠在工作台38a的上方於水平方向上移動。The table 38 a is rotatable about an axis along a direction perpendicular to the mounting surface of the workpiece 1. The nozzle 38b has a shaft portion extending in the Z-axis direction (vertical direction) outside the table 38a, a main body extending from an upper portion of the shaft portion in a horizontal direction perpendicular to the Z-axis direction, and a main body disposed on the main body. The front end faces the discharge port below the Z-axis direction. The discharge port can be moved in the horizontal direction above the table 38a by rotating the shaft portion.

噴嘴38b形成為管線狀，將從連接於該軸部下部的供給源供給之液體送到該排出口，並能夠從排出口將該液體排出至保持在工作台38a上的工件1。噴嘴38b將例如作為保護工件1的正面1a之保護膜材料的水溶性液狀樹脂，或清洗該正面1a的清洗液排出至工件1。再者，噴嘴38b也可以排出液體與氣體的混合流體至工件1。The nozzle 38b is formed in a line shape, and the liquid supplied from a supply source connected to the lower portion of the shaft portion is sent to the discharge port, and the liquid can be discharged from the discharge port to the work 1 held on the table 38a. The nozzle 38 b discharges, for example, a water-soluble liquid resin serving as a protective film material for protecting the front surface 1 a of the workpiece 1 or a cleaning liquid for cleaning the front surface 1 a to the workpiece 1. In addition, the nozzle 38 b may discharge a mixed fluid of a liquid and a gas to the workpiece 1.

當由雷射加工單元32沿著切割道5對工件1進行雷射加工（燒蝕加工）時，從由雷射加工去除的部分產生被稱作碎片的加工屑，並飛濺於工件1上而附著在正面1a。一旦附著到正面1a上的碎片，即使清洗工件1，要完全去除也是不容易的。When laser processing (ablation processing) is performed on the workpiece 1 along the cutting path 5 by the laser processing unit 32, machining chips called fragments are generated from the portion removed by the laser processing, and are scattered on the workpiece 1 and Attached to the front face 1a. Once the debris adhered to the front surface 1a, even if the workpiece 1 is cleaned, it is not easy to completely remove it.

於是，在實施工件1的雷射加工前藉由保護膜塗佈兼清洗裝置38供給水溶性的液狀樹脂到正面1a，以形成作為保護膜功能的水溶性樹脂膜。如此一來，即使碎片飛濺於工件1的正面1a上，除了由雷射加工所形成的加工槽，該碎片由於附著在水溶性樹脂膜上而不會附著在該正面1a上。Therefore, before the laser processing of the workpiece 1, the water-soluble liquid resin is supplied to the front surface 1a by the protective film coating and cleaning device 38 to form a water-soluble resin film functioning as a protective film. In this way, even if debris is splashed on the front surface 1a of the workpiece 1, the debris is not attached to the front surface 1a because it adheres to the water-soluble resin film except for the processing groove formed by laser processing.

在雷射加工實施後，清洗液藉由保護膜塗佈兼清洗裝置38被供給至工件1的正面上，雖是清洗工件1的正面側，此時，碎片藉由清洗液會與該水溶性樹脂膜一起被去除。After the laser processing is performed, the cleaning liquid is supplied to the front surface of the workpiece 1 through the protective film coating and cleaning device 38. Although the front side of the workpiece 1 is cleaned, at this time, the debris is water-soluble by the cleaning liquid. The resin film is removed together.

此外，在雷射加工裝置2的基台4上之鄰接該保護膜塗佈兼清洗裝置38的位置上，配設有蝕刻裝置40。蝕刻裝置40具備蝕刻腔室42，在蝕刻工件1時，工件1被搬入蝕刻腔室42中。蝕刻裝置40進一步具備，用於將蝕刻腔室42的內部排氣之排氣單元44，以及從氣體供給源46a將二氟化氙氣體供給至蝕刻腔室42的氣體供給單元46。An etching device 40 is disposed on the base 4 of the laser processing device 2 at a position adjacent to the protective film coating and cleaning device 38. The etching device 40 includes an etching chamber 42. When the workpiece 1 is etched, the workpiece 1 is carried into the etching chamber 42. The etching apparatus 40 further includes an exhaust unit 44 for exhausting the inside of the etching chamber 42, and a gas supply unit 46 that supplies xenon difluoride gas to the etching chamber 42 from a gas supply source 46 a.

在雷射加工裝置2的基台4之前部，配設有兼作顯示裝置及輸入裝置的附觸控面板之顯示器48。該附觸控面板之顯示器48顯示雷射加工裝置2的狀態，或加工狀況、加工條件等各種資訊。此外，雷射加工裝置2的使用者或者管理者等，藉由該附觸控面板之顯示器48對雷射加工裝置2輸入各種指示等。A display 48 with a touch panel that doubles as a display device and an input device is disposed in front of the base 4 of the laser processing device 2. The display 48 with a touch panel displays various information such as the status of the laser processing device 2 or the processing status and processing conditions. In addition, the user or manager of the laser processing apparatus 2 inputs various instructions and the like to the laser processing apparatus 2 through the display 48 with a touch panel.

接著，詳細說明關於本實施方式之工件1的加工方法之各步驟。首先，實施在工件1的正面1a上形成作為保護膜功能的水溶性樹脂膜之保護膜形成步驟。使用搬送軌道8a及搬送裝置8等，將框架單元13狀態的工件1從放在卡匣載置台6的卡匣6a搬送到保護膜塗佈兼清洗裝置38的工作台38a上。Next, each step of the processing method of the workpiece 1 according to this embodiment will be described in detail. First, a protective film forming step of forming a water-soluble resin film functioning as a protective film on the front surface 1a of the workpiece 1 is performed. The workpiece 1 in the state of the frame unit 13 is transferred from the cassette 6 a placed on the cassette mounting table 6 to the table 38 a of the protective film coating and cleaning apparatus 38 using the transfer rail 8 a and the transfer device 8.

接著，將噴嘴38b的排出口定位在工作台38a中央附近的上方，並一邊使工作台38a旋轉一邊從該排出口使水溶性的液狀樹脂排出至工件1的正面1a上。亦即，藉由旋轉塗佈法將該液狀樹脂塗佈至工件1的正面1a。Next, the discharge port of the nozzle 38b is positioned above the center of the table 38a, and the water-soluble liquid resin is discharged from the discharge port to the front surface 1a of the work 1 while the table 38a is rotated. That is, the liquid resin is applied to the front surface 1 a of the workpiece 1 by a spin coating method.

圖3（A）是示意性顯示在工件上塗佈水溶性液狀樹脂之狀態的剖面圖。如圖3（A）所示，當將該液狀樹脂塗佈至工件1的正面1a時，形成作為保護膜功能的水溶性樹脂膜15。另外，如圖3（A）所示，工作台38a也可以具備把持框架單元13之框架11的夾具38c。FIG. 3 (A) is a cross-sectional view schematically showing a state where a water-soluble liquid resin is applied to a workpiece. As shown in FIG. 3 (A), when the liquid resin is applied to the front surface 1a of the workpiece 1, a water-soluble resin film 15 functioning as a protective film is formed. As shown in FIG. 3 (A), the table 38 a may include a jig 38 c that holds the frame 11 of the frame unit 13.

接著，實施沿著工件1的切割道5照射雷射光束以去除功能層3（參閱圖1）之雷射加工步驟。雷射加工步驟是藉由雷射加工單元32所實施。首先，藉由搬送裝置8使工件1移動至卡盤台10的保持面10a上。然後，以夾具10b把持框架11，並且透過膠膜9使卡盤台10吸引保持工件1。Next, a laser processing step of irradiating a laser beam along the cutting path 5 of the workpiece 1 to remove the functional layer 3 (see FIG. 1) is performed. The laser processing step is performed by a laser processing unit 32. First, the workpiece 1 is moved to the holding surface 10 a of the chuck table 10 by the transfer device 8. Then, the frame 11 is gripped by the jig 10b, and the chuck table 10 is sucked and held by the chuck 10 through the adhesive film 9.

接著，藉由攝像單元36拍攝工件1，檢測工件1的切割道5，以能夠沿著切割道5對工件1進行雷射加工的方式使卡盤台10移動及旋轉，並實施對準。圖3（B）是示意性顯示雷射加工步驟的剖面圖。如圖3（B）所示，一邊加工進給工件1，一邊將脈衝振盪之雷射光束34a從加工頭34照射至工件1的正面。Next, the workpiece 1 is photographed by the camera unit 36, and the cutting path 5 of the workpiece 1 is detected, and the chuck table 10 can be moved and rotated so as to perform laser processing along the cutting path 5, and alignment is performed. FIG. 3 (B) is a sectional view schematically showing a laser processing step. As shown in FIG. 3 (B), while the workpiece 1 is being fed, the laser beam 34 a oscillated by pulses is irradiated from the processing head 34 to the front surface of the workpiece 1.

當雷射光束34a沿著切割道5照射時，會沿著切割道5（參閱圖1）去除功能層3（參閱圖1）。在沿著一條切割道5實施雷射加工後，分度進給工件1，並沿著其他切割道5同樣地一個接一個實施雷射加工。在沿著平行並排於一個方向的切割道5實施雷射加工後，使卡盤台10繞垂直於保持面10a的軸旋轉，並沿著並排於其他方向的切割道5同樣地實施雷射加工。When the laser beam 34 a is irradiated along the cutting path 5, the functional layer 3 (see FIG. 1) is removed along the cutting path 5 (see FIG. 1). After laser processing is performed along one cutting path 5, the workpiece 1 is fed in increments, and laser processing is performed one after another along the other cutting paths 5. After laser processing is performed along the cutting path 5 parallel to one direction, the chuck table 10 is rotated around an axis perpendicular to the holding surface 10a, and laser processing is similarly performed along the cutting path 5 parallel to the other direction. .

圖4（A）是放大並示意性顯示雷射光束34a照射之工件1的剖面圖。在雷射光束34a所照射的區域中形成有TEG7a。圖4（B）是放大並示意性顯示雷射加工步驟後之工件1的剖面圖。FIG. 4 (A) is an enlarged and schematic cross-sectional view of the workpiece 1 irradiated with the laser beam 34a. A TEG 7a is formed in a region irradiated by the laser beam 34a. FIG. 4 (B) is an enlarged and schematic sectional view of the workpiece 1 after the laser processing step.

如圖4（B）所示，當對工件1進行雷射加工並去除功能層3時，形成加工槽3a並且矽基板1c會露出在該加工槽3a的底部。此時，露出在加工槽3a之底部的矽基板1c的正面上形成有微小的加工痕（未圖示）。又，當實施雷射加工時，雖然作為工件1的熔融物之加工屑7b（碎片）飛濺於工件1的正面，但在該加工屑7b中也包含來自TEG7a的銅。As shown in FIG. 4 (B), when laser processing the workpiece 1 and removing the functional layer 3, a processing groove 3a is formed and a silicon substrate 1c is exposed at the bottom of the processing groove 3a. At this time, minute processing marks (not shown) are formed on the front surface of the silicon substrate 1c exposed at the bottom of the processing groove 3a. When laser processing is performed, machining chips 7b (chips), which are melts of the workpiece 1, splash on the front surface of the workpiece 1, but the machining chips 7b also contain copper from TEG 7a.

在本實施方式之工件1的加工方法中，將二氟化氙氣體供給至工件1的正面以蝕刻露出在加工槽3a之矽基板1c的正面，並且將包含於加工屑7b的銅氟化以抑制加工屑7b的巨大化。由於蝕刻步驟是以蝕刻裝置40實施，在此之前，會實施將工件1容納至蝕刻裝置40之容納步驟。In the method for processing a workpiece 1 according to this embodiment, xenon difluoride gas is supplied to the front surface of the workpiece 1 to be etched and exposed on the front surface of the silicon substrate 1c in the processing tank 3a, and copper contained in the processing chip 7b is fluorinated to Enlargement of the machining chips 7b is suppressed. Since the etching step is performed by the etching apparatus 40, before that, the accommodating step of accommodating the workpiece 1 into the etching apparatus 40 will be performed.

在容納步驟中，藉由搬送裝置8等將該工件1搬送，並容納至蝕刻裝置40的蝕刻腔室42中。圖5（A）是示意性顯示容納步驟的剖面圖。在此，使用圖5（A）詳細說明關於蝕刻裝置40的構成。如圖5（A）所示，蝕刻裝置40具備在下方具有開口之大致凹狀的腔室蓋42a，以及配設於該腔室蓋42a下方的保持台42b。In the accommodating step, the workpiece 1 is conveyed by the conveying device 8 or the like, and is accommodated in the etching chamber 42 of the etching device 40. FIG. 5 (A) is a cross-sectional view schematically showing a containing step. Here, the structure of the etching apparatus 40 is demonstrated in detail using FIG. 5 (A). As shown in FIG. 5 (A), the etching device 40 includes a substantially concave chamber cover 42 a having an opening below, and a holding table 42 b arranged below the chamber cover 42 a.

保持台42b具備例如載置面，該載置面的直徑比被搬入蝕刻裝置40之框架單元13的直徑大，框架單元13狀態的工件1被放置在該載置面上。此外，例如，腔室蓋42a之該開口的直徑比工件1的直徑大，且腔室蓋42a的外徑比框架11的內徑小。在圍繞腔室蓋42a之該開口的下表面，安裝有例如以彈性構件形成的O環形等之環狀的密封件42c。The holding table 42b includes, for example, a mounting surface having a diameter larger than that of the frame unit 13 carried into the etching apparatus 40, and the workpiece 1 in the state of the frame unit 13 is placed on the mounting surface. In addition, for example, the diameter of the opening of the chamber cover 42 a is larger than the diameter of the workpiece 1, and the outer diameter of the chamber cover 42 a is smaller than the inner diameter of the frame 11. A ring-shaped seal 42c such as an O-ring formed of an elastic member is attached to the lower surface of the opening surrounding the chamber cover 42a.

在將工件1容納至蝕刻腔室時，以框架單元13的中心重疊於保持台42b的中心及腔室蓋42a的中心之方式，將工件1載置於保持台42b上。然後，使腔室蓋42a下降。於是，該環狀的密封件42c接觸並密接於構成框架單元13的膠膜9，並形成被腔室蓋42a及保持台42b包圍而密封之區域。此區域成為蝕刻腔室42。When the workpiece 1 is accommodated in the etching chamber, the workpiece 1 is placed on the holding table 42b so that the center of the frame unit 13 overlaps the center of the holding table 42b and the center of the chamber cover 42a. Then, the chamber cover 42a is lowered. Then, the ring-shaped seal 42c contacts and comes into close contact with the adhesive film 9 constituting the frame unit 13, and forms a region enclosed by the chamber cover 42a and the holding table 42b and sealed. This area becomes the etching chamber 42.

在成為蝕刻腔室42之天花板的腔室蓋42a之上部，形成有一端連接至排氣單元44的排氣通道44b，以及一端連接至氣體供給單元46的供氣通道46b。排氣通道44b的另一端以及供氣通道46b的另一端，分別連通至蝕刻腔室42。在腔室蓋42a的內部，以將蝕刻腔室42分為上下的方式配設有網狀的氣體分散構件42d。On the upper part of the chamber cover 42 a that becomes the ceiling of the etching chamber 42, an exhaust passage 44 b connected to the exhaust unit 44 at one end and a gas supply passage 46 b connected to the gas supply unit 46 at one end are formed. The other end of the exhaust passage 44b and the other end of the gas supply passage 46b are connected to the etching chamber 42, respectively. A mesh-shaped gas dispersion member 42d is arranged inside the chamber cover 42a so as to divide the etching chamber 42 into the upper and lower portions.

接著，實施蝕刻工件1的蝕刻步驟。使排氣單元44動作，並通過排氣通道44b將蝕刻腔室42的內部排氣。圖5（B）是示意性顯示蝕刻腔室42之排氣狀態的剖面圖。在蝕刻腔室42的內部充分排氣後，由排氣單元44停止排氣。Next, an etching step of etching the workpiece 1 is performed. The exhaust unit 44 is operated, and the inside of the etching chamber 42 is exhausted through the exhaust passage 44b. FIG. 5 (B) is a cross-sectional view schematically showing an exhaust state of the etching chamber 42. After the inside of the etching chamber 42 is sufficiently exhausted, the exhaust is stopped by the exhaust unit 44.

然後，使氣體供給單元46動作，通過供氣通道46b從氣體供給源46a將二氟化氙氣體導入蝕刻腔室42的內部。此時，二氟化氙氣體藉由氣體分散構件42d均勻地供給至工件1的正面上。該二氟化氙氣體，蝕刻已露出之矽基板1c的正面。圖6（A）是示意性顯示蝕刻步驟的剖面圖。Then, the gas supply unit 46 is operated, and the xenon difluoride gas is introduced into the etching chamber 42 from the gas supply source 46a through the gas supply channel 46b. At this time, the xenon difluoride gas is uniformly supplied onto the front surface of the workpiece 1 through the gas dispersion member 42d. This xenon difluoride gas etches the exposed front surface of the silicon substrate 1c. FIG. 6 (A) is a sectional view schematically showing an etching step.

在蝕刻步驟中由於不需要使二氟化氙氣體電漿化，在蝕刻裝置40中不需要使氣體電漿化的機構。雷射加工裝置2成為一種藉由裝置構成最小限度的複雜化而能夠進行工件的蝕刻之裝置。Since the xenon difluoride gas does not need to be plasmatized in the etching step, a mechanism for plasmatizing the gas is not required in the etching device 40. The laser processing device 2 is a device capable of performing etching of a workpiece with a minimum complexity of the device configuration.

之後，為了使蝕刻停止而將二氟化氙氣體從蝕刻腔室42中排出。圖6（B）是示意性顯示蝕刻腔室42之排氣狀態的剖面圖。藉由氣體供給單元46使二氟化氙氣體的供給停止，當排氣單元44動作以將二氟化氙氣體排出時，蝕刻結束。Thereafter, in order to stop the etching, xenon difluoride gas is exhausted from the etching chamber 42. FIG. 6 (B) is a cross-sectional view schematically showing an exhaust state of the etching chamber 42. The supply of xenon difluoride gas is stopped by the gas supply unit 46. When the exhaust unit 44 is operated to discharge the xenon difluoride gas, the etching is completed.

再者，蝕刻裝置40可以進一步具備獨立的排氣單元，也可以藉由該獨立的排氣單元將二氟化氙氣體排氣。由於二氟化氙氣體為強效的氟化劑，較佳為由專用的回收機構回收並進行適當的處理。In addition, the etching device 40 may further include an independent exhaust unit, or the independent exhaust unit may exhaust xenon difluoride gas. Since xenon difluoride gas is a powerful fluorinating agent, it is preferably recovered by a dedicated recovery mechanism and processed appropriately.

圖7（A）是放大並示意性顯示實施蝕刻步驟時之工件的剖面圖。矽基板1c容易被二氟化氙氣體46d蝕刻，而水溶性樹脂膜15則不容易被蝕刻。因此，在蝕刻步驟中矽基板1c被選擇性地蝕刻。FIG. 7 (A) is an enlarged and schematic cross-sectional view of a workpiece when an etching step is performed. The silicon substrate 1c is easily etched by xenon difluoride gas 46d, and the water-soluble resin film 15 is not easily etched. Therefore, the silicon substrate 1c is selectively etched in the etching step.

圖7（B）是放大並示意性顯示蝕刻步驟後之工件1的剖面圖。在矽基板1c之正面上包含有於雷射加工步驟中形成的加工痕，若去除包含該加工痕之矽基板1c的正面，則在工件1被分割而形成的元件晶片上不會殘留加工痕，元件晶片的強度會提高。FIG. 7 (B) is an enlarged and schematic cross-sectional view of the workpiece 1 after the etching step. The front surface of the silicon substrate 1c includes the processing marks formed in the laser processing step. If the front surface of the silicon substrate 1c including the processing marks is removed, no processing marks remain on the element wafer formed by dividing the workpiece 1. , The strength of the component wafer will increase.

此外，當二氟化氙氣體46d接觸到附著在工件1之正面上的包含銅之加工屑7b時，包含在加工屑7b中的銅會被氟化。由於當銅被氟化時其與大氣中的水分間的反應性會降低，所以能夠抑制加工屑7b的巨大化。In addition, when the xenon difluoride gas 46d comes into contact with the copper-containing machining chips 7b attached to the front surface of the workpiece 1, the copper contained in the machining chips 7b is fluorinated. Since the reactivity between copper and moisture in the atmosphere decreases when copper is fluorinated, it is possible to suppress the enlargement of the processing chips 7b.

在實施蝕刻步驟之後，實施將工件1從蝕刻腔室42中搬出之搬出步驟。圖8（A）是示意性顯示從蝕刻腔室42取出工件1之狀態的剖面圖。蝕刻腔室42具備例如未圖示的洩漏機構，大氣被導入至蝕刻腔室42內，並使氣壓相當於外部。接著，拉起腔室蓋42a，並將工件1搬出。After the etching step is performed, a carrying-out step of carrying out the workpiece 1 from the etching chamber 42 is performed. FIG. 8A is a cross-sectional view schematically showing a state where the workpiece 1 is taken out from the etching chamber 42. The etching chamber 42 includes, for example, a leak mechanism (not shown), and the atmosphere is introduced into the etching chamber 42 and the air pressure is made equal to the outside. Next, the chamber cover 42a is pulled up, and the work 1 is carried out.

此外，如圖8（B）所示，蝕刻裝置40也可以具備將氮氣供給至蝕刻腔室42的氣體源46c。圖8（B）是示意性顯示蝕刻裝置40之一例的剖面圖。當蝕刻腔室42的壓力相當於外部時，可以從氣體源46c將氮氣導入蝕刻腔室42。In addition, as shown in FIG. 8 (B), the etching device 40 may include a gas source 46 c that supplies nitrogen to the etching chamber 42. FIG. 8B is a cross-sectional view schematically showing an example of the etching device 40. When the pressure of the etching chamber 42 is equivalent to the outside, nitrogen gas may be introduced into the etching chamber 42 from the gas source 46c.

在將大氣導入蝕刻腔室42的情況，大氣中包含的水分等會進入蝕刻腔室42且水會附著於腔室蓋42a之內壁等。於是，當欲使用蝕刻裝置40實施其他工件1之蝕刻時，會有無法實施適當的蝕刻之疑慮。相對於此，在將氮氣導入蝕刻腔室42的情況，能夠防止水等對蝕刻腔室42內部的侵入。When the atmosphere is introduced into the etching chamber 42, moisture and the like contained in the atmosphere enter the etching chamber 42 and water adheres to the inner wall of the chamber cover 42 a and the like. Therefore, when the etching of the other workpiece 1 is to be performed using the etching device 40, there is a possibility that proper etching cannot be performed. In contrast, when nitrogen gas is introduced into the etching chamber 42, intrusion of water or the like into the inside of the etching chamber 42 can be prevented.

在實施搬出步驟之後，實施清洗工件1之清洗步驟。圖9（A）是示意性顯示工件1之清洗的剖面圖。藉由搬送裝置8等將工件1從蝕刻裝置40再次搬送到保護膜塗佈兼清洗裝置38。接著，將噴嘴38b的排出口定位在工作台38a中央附近的上方，並一邊使工作台38a旋轉一邊從該排出口使清洗液排出至工件1的正面1a上。After the carrying-out step is performed, a cleaning step of cleaning the workpiece 1 is performed. FIG. 9 (A) is a cross-sectional view schematically showing cleaning of the workpiece 1. FIG. The workpiece 1 is transported again from the etching apparatus 40 to the protective film coating and cleaning apparatus 38 by the transport apparatus 8 or the like. Next, the discharge port of the nozzle 38b is positioned above the center of the table 38a, and the cleaning liquid is discharged from the discharge port to the front surface 1a of the work 1 while the table 38a is rotated.

如圖9（A）所示，當使清洗液噴出至工件1的正面1a時，能夠從工件1的正面去除作為保護膜功能的水溶性樹脂膜15。圖9（B）是放大並示意性顯示清洗後之工件1的剖面圖。如圖9（B）所示，附著在水溶性樹脂膜15上的加工屑7b，與該水溶性樹脂膜15一起從工件1上被洗掉。As shown in FIG. 9 (A), when the cleaning liquid is ejected to the front surface 1a of the workpiece 1, the water-soluble resin film 15 functioning as a protective film can be removed from the front surface of the workpiece 1. FIG. 9 (B) is an enlarged and schematic cross-sectional view of the workpiece 1 after cleaning. As shown in FIG. 9 (B), the processing chips 7 b attached to the water-soluble resin film 15 are washed away from the workpiece 1 together with the water-soluble resin film 15.

另外，附著在露出於加工槽3a底部之矽基板1c上的加工屑7b，雖然在清洗步驟中有無法充分去除的情況，但在蝕刻步驟中包含在該加工屑7b中的銅已被氟化，由於已抑制加工屑7b的巨大化所以不會成為問題。其後，在沿著切割道5切割工件1時，該加工屑7b會被去除。In addition, the processing chips 7b attached to the silicon substrate 1c exposed at the bottom of the processing tank 3a may not be sufficiently removed in the cleaning step, but the copper contained in the processing chips 7b in the etching step has been fluorinated. Since the increase in the size of the machining chips 7b is suppressed, it is not a problem. Thereafter, when the workpiece 1 is cut along the cutting path 5, the machining chips 7 b are removed.

如同以上的說明，根據本實施方式之工件1的加工方法，當沿著切割道5去除功能層3時，即使從被雷射加工的TEG7a產生包含銅的加工屑7b，能夠藉由蝕刻步驟將銅氟化以抑制巨大化。此外，沿著切割道5已露出之矽基板1c包含加工痕的正面，由於藉由蝕刻步驟而被去除，能夠將工件1被分割所形成的元件晶片之強度提升。As described above, according to the processing method of the workpiece 1 according to this embodiment, when the functional layer 3 is removed along the cutting path 5, even if copper-containing machining chips 7b are generated from the laser-processed TEG 7a, the etching step Copper is fluorinated to suppress enlarging. In addition, the front surface of the silicon substrate 1c that has been exposed along the dicing path 5 including the processing marks is removed by the etching step, and the strength of the element wafer formed by dividing the workpiece 1 can be improved.

此外，本發明並不限定於上述實施方式的記載，能夠作各種變更以實施。例如，在上述實施方式中，雖已說明了關於在實施蝕刻步驟之後實施清洗步驟的情況，但本發明之一個形態的工件加工方法並不限定於此。例如，也可以在實施蝕刻步驟之前實施清洗步驟。The present invention is not limited to the description of the above-mentioned embodiment, and can be implemented with various changes. For example, in the embodiment described above, the case where the cleaning step is performed after the etching step is performed has been described, but the method for processing a workpiece according to one aspect of the present invention is not limited to this. For example, the cleaning step may be performed before the etching step.

在此情況下，由於藉由實施清洗步驟作為保護膜功能的水溶性樹脂膜15被從工件1的正面1a上去除，所以在蝕刻步驟中功能層3的上表面會曝露於二氟化氙氣體中。然而，由於二氟化氙氣體對於矽基板1c較功能層3的選擇性較高，所以能夠適當地蝕刻因雷射加工而殘留加工痕的矽基板1c之正面。In this case, since the water-soluble resin film 15 functioning as a protective film is removed from the front surface 1a of the workpiece 1 by performing the cleaning step, the upper surface of the functional layer 3 is exposed to xenon difluoride gas in the etching step. in. However, since the selectivity of the xenon difluoride gas to the silicon substrate 1c is higher than that of the functional layer 3, it is possible to appropriately etch the front surface of the silicon substrate 1c in which processing marks remain due to laser processing.

其他，上述實施方式的構造、方法等，在不脫離本發明目的之範圍下，可作適當變更以實施。In addition, the structure, method, and the like of the above-mentioned embodiment can be appropriately modified and implemented without departing from the scope of the present invention.

1‧‧‧工件1‧‧‧Workpiece

1a‧‧‧正面 1a‧‧‧front

1b‧‧‧背面 1b‧‧‧ back

1c‧‧‧矽基板 1c‧‧‧ silicon substrate

3‧‧‧功能層 3‧‧‧ functional layer

3a‧‧‧加工槽 3a‧‧‧Processing trough

5‧‧‧切割道 5‧‧‧ Cutting Road

7‧‧‧元件 7‧‧‧ components

7a‧‧‧TEG 7a‧‧‧TEG

7b‧‧‧加工屑 7b‧‧‧Processing chips

9‧‧‧膠膜 9‧‧‧ film

11‧‧‧框架 11‧‧‧Frame

13‧‧‧框架單元 13‧‧‧Frame Unit

15‧‧‧水溶性樹脂 15‧‧‧ water-soluble resin

2‧‧‧雷射加工裝置 2‧‧‧laser processing equipment

4‧‧‧基台 4‧‧‧ abutment

6‧‧‧卡匣 6‧‧‧ Cassette

6a‧‧‧卡匣載置台 6a‧‧‧cartridge mounting table

8‧‧‧搬送裝置 8‧‧‧ transfer device

8a‧‧‧搬送軌道 8a‧‧‧ transport track

10‧‧‧卡盤台 10‧‧‧ chuck table

10a‧‧‧保持面 10a‧‧‧ keep face

10b、38c‧‧‧夾具 10b, 38c‧‧‧Jig

12、22‧‧‧移動機構 12, 22‧‧‧ mobile agency

14、24‧‧‧導軌 14, 24‧‧‧ rail

16、26‧‧‧移動板 16, 26‧‧‧ mobile board

18、28‧‧‧滾珠螺桿 18, 28‧‧‧ Ball Screw

20‧‧‧脈衝馬達 20‧‧‧Pulse motor

30‧‧‧支撐部 30‧‧‧ support

32‧‧‧雷射加工單元 32‧‧‧laser processing unit

34‧‧‧加工頭 34‧‧‧Processing head

34a‧‧‧雷射光束 34a‧‧‧laser beam

36‧‧‧攝像單元 36‧‧‧ Camera Unit

38‧‧‧保護膜塗佈兼清洗裝置 38‧‧‧ protective film coating and cleaning device

38a‧‧‧工作台 38a‧‧‧Workbench

38b‧‧‧噴嘴 38b‧‧‧nozzle

40‧‧‧蝕刻裝置 40‧‧‧etching device

42‧‧‧蝕刻腔室 42‧‧‧Etching chamber

42a‧‧‧腔室蓋 42a‧‧‧chamber cover

42b‧‧‧保持台 42b‧‧‧holding table

42c‧‧‧片構件 42c‧‧‧ pieces

42b‧‧‧氣體分散構件 42b‧‧‧Gas dispersion member

44‧‧‧排氣單元 44‧‧‧Exhaust unit

44b‧‧‧排氣通道 44b‧‧‧Exhaust passage

46‧‧‧氣體供給單元 46‧‧‧Gas supply unit

46a、46c‧‧‧氣體供給源 46a, 46c‧‧‧ gas supply source

46b‧‧‧供氣通道 46b‧‧‧air supply channel

46d‧‧‧氣體 46d‧‧‧gas

48‧‧‧附觸控面板之顯示器 48‧‧‧ Display with touch panel

圖1是示意性顯示工件的立體圖。FIG. 1 is a perspective view schematically showing a workpiece.

圖2是示意性顯示雷射加工裝置的側視圖。 FIG. 2 is a side view schematically showing a laser processing apparatus.

圖3（A）是示意性顯示在工件上塗佈水溶性的液狀樹脂之狀態的剖面圖，圖3（B）是示意性顯示雷射加工步驟的剖面圖。 FIG. 3 (A) is a cross-sectional view schematically showing a state where a water-soluble liquid resin is applied to a workpiece, and FIG. 3 (B) is a cross-sectional view schematically showing a laser processing step.

圖4（A）是放大並示意性顯示雷射光束照射之工件的剖面圖，圖4（B）是放大並示意性顯示雷射加工步驟後之工件的剖面圖。 FIG. 4 (A) is an enlarged and schematic sectional view of a workpiece irradiated by a laser beam, and FIG. 4 (B) is an enlarged and schematic sectional view of a workpiece after the laser processing step.

圖5（A）是示意性顯示容納步驟的剖面圖，圖5（B）是示意性顯示蝕刻腔室之排氣狀態的剖面圖。 FIG. 5 (A) is a cross-sectional view schematically showing the accommodating step, and FIG. 5 (B) is a cross-sectional view schematically showing an exhaust state of the etching chamber.

圖6（A）是示意性顯示蝕刻步驟的剖面圖，圖6（B）是示意性顯示蝕刻腔室之排氣狀態的剖面圖。 FIG. 6 (A) is a cross-sectional view schematically showing an etching step, and FIG. 6 (B) is a cross-sectional view schematically showing an exhaust state of the etching chamber.

圖7（A）是放大並示意性顯示實施蝕刻步驟時之工件的剖面圖，圖7（B）是放大並示意性顯示蝕刻步驟後之工件的剖面圖。 FIG. 7 (A) is an enlarged and schematic sectional view of the workpiece when the etching step is performed, and FIG. 7 (B) is an enlarged and schematic sectional view of the workpiece after the etching step.

圖8（A）是示意性顯示從蝕刻腔室取出工件之狀態的剖面圖，圖8（B）是示意性顯示蝕刻裝置之一例的剖面圖。 FIG. 8 (A) is a cross-sectional view schematically showing a state where a workpiece is taken out from the etching chamber, and FIG. 8 (B) is a cross-sectional view schematically showing an example of an etching apparatus.

圖9（A）是示意性顯示工件之清洗的剖面圖，圖9（B）是放大並示意性顯示清洗後之工件的剖面圖。 FIG. 9 (A) is a cross-sectional view schematically showing the cleaning of the workpiece, and FIG. 9 (B) is an enlarged and schematic cross-sectional view of the workpiece after cleaning.

Claims (4)

一種工件加工方法，該工件具有矽基板以及形成在該矽基板上的功能層，且該工件在設定於正面的多條交叉切割道所劃分的各區域中形成有包含該功能層的元件；該工件加工方法之特徵在於具備： 雷射加工步驟，從工件之正面側沿著該切割道照射對功能層具有吸收性之波長的雷射光束以去除該功能層，並使該矽基板沿著該切割道露出； 容納步驟，在該雷射加工步驟之後，將該工件容納於蝕刻腔室中；以及 蝕刻步驟，在該容納步驟之後，將二氟化氙氣體供給至該工件的正面，並沿著該切割道蝕刻以去除已露出之矽基板的正面。A workpiece processing method, the workpiece has a silicon substrate and a functional layer formed on the silicon substrate, and the workpiece includes an element including the functional layer in each area divided by a plurality of cross cutting lines set on the front surface; the The workpiece processing method is characterized by: A laser processing step, irradiating a laser beam having a wavelength absorptive to the functional layer along the cutting path from the front side of the workpiece to remove the functional layer and exposing the silicon substrate along the cutting path; A accommodating step of accommodating the workpiece in an etching chamber after the laser processing step; and An etching step. After the accommodating step, xenon difluoride gas is supplied to the front surface of the workpiece, and etching is performed along the dicing path to remove the front surface of the exposed silicon substrate. 如請求項1所述的工件加工方法，其中，其特徵在於： 該功能層中包含有銅； 在該雷射加工步驟中，由於雷射光束的照射自該功能層產生包含銅之加工屑； 在該蝕刻步驟中，藉由該二氟化氙氣體使該加工屑所包含之該銅的表面氟化。The workpiece processing method according to claim 1, wherein: The functional layer contains copper; In the laser processing step, processing debris containing copper is generated from the functional layer due to the irradiation of the laser beam; In the etching step, the surface of the copper contained in the processing chips is fluorinated by the xenon difluoride gas. 一種蝕刻工件的蝕刻裝置，該工件具有矽基板以及形成在該矽基板上的功能層，且該工件在設定於正面的多條交叉切割道所劃分的各區域中形成有包含該功能層的元件，並被以對該功能層具有吸收性之波長的雷射光束照射，而沿著該切割道去除該功能層使該矽基板露出；該蝕刻裝置之特徵在於具備： 蝕刻腔室，容納該工件； 排氣單元，將該蝕刻腔室內的空氣排出；以及 氣體供給單元，將二氟化氙氣體供給至該蝕刻腔室內。An etching device for etching a workpiece, the workpiece has a silicon substrate and a functional layer formed on the silicon substrate, and the workpiece includes an element including the functional layer in each area divided by a plurality of cross cutting lines set on the front surface. And is irradiated with a laser beam having an absorptive wavelength to the functional layer, and the functional layer is removed along the dicing path to expose the silicon substrate; the etching device is characterized by having: An etching chamber to hold the workpiece; An exhaust unit for exhausting air in the etching chamber; and The gas supply unit supplies xenon difluoride gas into the etching chamber. 一種對工件進行雷射加工之雷射加工裝置，該工件具有矽基板以及形成在該矽基板上的功能層，且該工件在設定於正面的多條交叉切割道所劃分的各區域中形成有包含該功能層的元件；該雷射加工裝置之特徵在於具備： 卡盤台，其保持該工件； 雷射光束照射單元，其將對該功能層具有吸收性之波長的雷射光束從被保持在該卡盤台上的工件之正面側沿著該切割道照射，藉此去除該功能層，以沿著該切割道使矽基板露出；以及 蝕刻單元，其將二氟化氙氣體供給至工件，並沿著該切割道蝕刻已露出之矽基板的正面。A laser processing device for performing laser processing on a workpiece, the workpiece has a silicon substrate and a functional layer formed on the silicon substrate, and the workpiece is formed in each area divided by a plurality of cross cutting lines set on the front surface An element including the functional layer; the laser processing device is characterized by having: A chuck table that holds the workpiece; A laser beam irradiating unit irradiates a laser beam having an absorptive wavelength to the functional layer from the front side of a workpiece held on the chuck table along the cutting path, thereby removing the functional layer to Expose the silicon substrate along the dicing path; and An etching unit supplies xenon difluoride gas to the workpiece, and etches the front surface of the silicon substrate that has been exposed along the scribe line.
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Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021122932A (en) * 2020-02-10 2021-08-30 Ｔｏｗａ株式会社 Processing device
CN113084355A (en) * 2021-03-05 2021-07-09 深圳市福浪电子有限公司 Laser marking device for crystal oscillator production and processing
CN113894427A (en) * 2021-09-01 2022-01-07 苏州瀚川智能科技股份有限公司 Automatic laser activation device for IC belt
KR102507019B1 (en) 2022-10-05 2023-03-07 주식회사 아이티아이 Laser processing and etching apparatus and method
CN117697166B (en) * 2024-02-06 2024-04-19 中国工程物理研究院激光聚变研究中心 Method for etching organic film on surface of metal film by utilizing laser

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02187025A (en) * 1989-01-13 1990-07-23 Sanyo Electric Co Ltd Etching and manufacture of x-ray lithography mask
JP2003303788A (en) * 2002-04-11 2003-10-24 Mitsubishi Electric Corp Etching equipment
JP2005064230A (en) 2003-08-12 2005-03-10 Disco Abrasive Syst Ltd Dividing method of plate-shaped article
CN1755479A (en) * 2004-09-27 2006-04-05 Idc公司 Method and system for xenon fluoride etching with enhanced efficiency
GB2420443B (en) * 2004-11-01 2009-09-16 Xsil Technology Ltd Increasing die strength by etching during or after dicing
GB2458475B (en) * 2008-03-18 2011-10-26 Xsil Technology Ltd Processing of multilayer semiconductor wafers
GB2459302A (en) * 2008-04-18 2009-10-21 Xsil Technology Ltd A method of dicing wafers to give high die strength
JP2010162629A (en) * 2009-01-14 2010-07-29 Seiko Epson Corp Method of manufacturing mems device
CA2690697A1 (en) * 2009-01-27 2010-07-27 Air Products And Chemicals, Inc. Selective etching and formation of xenon difluoride
JP5340806B2 (en) * 2009-05-21 2013-11-13 株式会社ディスコ Laser processing method of semiconductor wafer
US7977213B1 (en) * 2010-03-31 2011-07-12 Electro Scientific Industries, Inc. Use of laser energy transparent stop layer to achieve minimal debris generation in laser scribing a multilayer patterned workpiece
US8642448B2 (en) * 2010-06-22 2014-02-04 Applied Materials, Inc. Wafer dicing using femtosecond-based laser and plasma etch
US8771539B2 (en) * 2011-02-22 2014-07-08 Applied Materials, Inc. Remotely-excited fluorine and water vapor etch
US8703581B2 (en) * 2011-06-15 2014-04-22 Applied Materials, Inc. Water soluble mask for substrate dicing by laser and plasma etch
JP5918044B2 (en) * 2012-06-25 2016-05-18 株式会社ディスコ Processing method and processing apparatus
US20150011073A1 (en) * 2013-07-02 2015-01-08 Wei-Sheng Lei Laser scribing and plasma etch for high die break strength and smooth sidewall
JP6113019B2 (en) * 2013-08-07 2017-04-12 株式会社ディスコ Wafer division method
US9224650B2 (en) * 2013-09-19 2015-12-29 Applied Materials, Inc. Wafer dicing from wafer backside and front side
US9299611B2 (en) * 2014-01-29 2016-03-29 Applied Materials, Inc. Method of wafer dicing using hybrid laser scribing and plasma etch approach with mask plasma treatment for improved mask etch resistance
JP6324743B2 (en) * 2014-01-31 2018-05-16 住友電工デバイス・イノベーション株式会社 Manufacturing method of semiconductor device
US9290848B2 (en) * 2014-06-30 2016-03-22 Tokyo Electron Limited Anisotropic etch of copper using passivation
JP2016039186A (en) * 2014-08-05 2016-03-22 株式会社ディスコ Processing method for wafer
US20160042968A1 (en) * 2014-08-05 2016-02-11 Applied Materials, Inc. Integrated oxide and si etch for 3d cell channel mobility improvements
CN107393848B (en) * 2017-07-12 2019-12-10 江苏鲁汶仪器有限公司 High-tightness gas-phase corrosion cavity

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