JP2013206977A - Substrate processing device and substrate processing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a substrate processing device and a substrate processing method which can remove foreign materials by discharging a processing liquid to which ultrasonic vibration is applied to a substrate and using substrate vibration generated by the processing liquid, and suppress damage on the substrate by cavitation.SOLUTION: A substrate processing device includes a first nozzle 10, a second nozzle 20, and a third nozzle 30. The first nozzle 10 discharges a first processing liquid 15 to a first discharge position P1 of a substrate 9. The second nozzle 20 discharges a second processing liquid 25 to which an ultrasonic wave is applied to a second discharge position P2 of the substrate 9. The third nozzle 30 sprays gas 35 on P3 between the first discharge position P1 and the second discharge position P2. When removing foreign materials, the substrate 9 is vibrated by the second processing liquid 25 and a foreign material 9P isolated from the surface of the substrate 9 by the vibration is removed by washing it away with the first processing liquid 15. At the same time, spreading of the second processing liquid 25 is suppressed by spraying of the gas 35 and damage on the substrate 9 by cavitation is suppressed.

Description

  The present invention relates to a substrate processing apparatus and a substrate processing method for removing foreign substances from the surface of a substrate.

  Manufacturing process of substrates for precision electronic devices such as semiconductor wafers, glass substrates for liquid crystal display devices, glass substrates for PDPs, glass substrates for photomasks, substrates for color filters, substrates for recording disks, substrates for solar cells, substrates for electronic paper, etc. In order to remove foreign substances from the surface of the substrate, various cleaning processes are performed. For example, so-called ultrasonic cleaning is known in which a processing liquid to which ultrasonic vibration is applied is supplied to a substrate to remove foreign substances from the surface of the substrate.

  A conventional substrate processing apparatus that performs ultrasonic cleaning is disclosed in Patent Document 1, for example.

Japanese Patent Laid-Open No. 9-45610

  In the ultrasonic cleaning, cavitation is generated in the processing liquid by applying ultrasonic vibration to the processing liquid, and foreign substances are removed from the surface of the substrate by the physical action of the cavitation. However, it is difficult to control the generation position and energy of cavitation in liquid caused by ultrasonic vibration. For this reason, a fine pattern on the substrate may be damaged by cavitation.

  For this reason, a cleaning method for removing foreign substances from a substrate using substrate vibration that is easier to control than cavitation has been studied. In the cleaning method, the processing liquid to which ultrasonic vibration is applied is locally ejected to the substrate to vibrate the substrate. Then, the foreign matter is released from the substrate by the vibration of the substrate. However, even in this cleaning method, when the locally ejected processing liquid comes into contact with the pattern on the substrate, the pattern may be damaged by cavitation in the processing liquid.

  The present invention has been made in view of such circumstances, and discharges a processing liquid to which ultrasonic vibration is applied to a substrate, removes foreign matter using the substrate vibration generated by the processing liquid, and cavitation. An object of the present invention is to provide a substrate processing apparatus and a substrate processing method capable of suppressing damage to the substrate due to the above.

  In order to solve the above problems, a first invention of the present application is a substrate processing apparatus for removing foreign matter from a surface of a substrate, wherein a holding unit that holds the substrate substantially horizontally and a first of the substrates held by the holding unit are provided. A first nozzle that discharges a first processing liquid to a first discharge position; a second nozzle that discharges a second processing liquid to which ultrasonic waves are applied to a second discharge position of a substrate held by the holding unit; A third nozzle that blows gas between the first discharge position and the second discharge position;

  A second invention of the present application is the substrate processing apparatus of the first invention, wherein the gas is nitrogen gas or dry air.

  A third invention of the present application is the substrate processing apparatus of the second invention, wherein the gas is a mixed gas of nitrogen gas or dry air and an organic solvent vapor.

  According to a fourth aspect of the present invention, there is provided a substrate processing apparatus for removing foreign matter from a surface of a substrate, wherein a holding unit that holds the substrate substantially horizontally and a first discharge position of the substrate held by the holding unit are arranged at a first position. A first nozzle that discharges a processing liquid; a second nozzle that discharges a second processing liquid to which ultrasonic waves are applied; and a second discharge position of the substrate held by the holding unit; A third nozzle for discharging a third processing liquid having a surface tension lower than that of the second processing liquid, between the second discharge position and the second discharge position;

  A fifth invention of the present application is the substrate processing apparatus of the fourth invention, wherein the third processing liquid is an organic solvent.

  The sixth invention of the present application is the substrate processing apparatus of the fifth invention, wherein the organic solvent is either isopropyl alcohol or hydrofluoroether.

  A seventh invention of the present application is the substrate processing apparatus according to any one of the first to sixth inventions, wherein the second discharge position is a peripheral edge portion of the substrate.

  An eighth invention of the present application is the substrate processing apparatus according to any one of the first to seventh inventions, wherein the second discharge position is located on the outer peripheral side of the substrate from the first discharge position, Two nozzles are directed vertically downward or obliquely toward the outer periphery of the substrate.

  A ninth invention of the present application is the substrate processing apparatus according to any of the first to eighth inventions, wherein the third nozzle is directed vertically downward or obliquely toward the second discharge position.

  A tenth invention of the present application is the substrate processing apparatus according to any one of the first to eighth inventions, wherein the third nozzle is located between the first discharge position and the second discharge position in a top view. It is directed in the direction across the road.

  An eleventh aspect of the present invention is the substrate processing apparatus according to any one of the first to tenth aspects, wherein the second processing liquid is deionized water, isopropyl alcohol, or hydrofluoroether, or these It is a mixed liquid.

  A twelfth aspect of the present invention is the substrate processing apparatus according to any one of the first to eleventh aspects, wherein the discharge of the third nozzle is started before the discharge of the second nozzle is started. The apparatus further includes a control unit that stops the discharge of the third nozzle after stopping the discharge of the two nozzles.

  A thirteenth invention of the present application is a substrate processing method for removing foreign substances from the surface of a substrate, and dams the spread of the processing solution on the surface of the substrate while supplying the substrate with a processing solution to which ultrasonic waves are applied. And the liquid flow by another processing liquid is formed in the other area | region of the surface of a board | substrate.

  According to the first invention of the present application, the substrate can be vibrated by the second treatment liquid, and foreign matters released from the surface of the substrate by the vibration can be removed by flowing with the first treatment liquid. Moreover, the spread of the second processing liquid is suppressed by the gas blown from the third nozzle. Therefore, damage to the substrate due to cavitation in the second processing liquid can be suppressed.

  In particular, according to the third invention of the present application, since the organic solvent is dissolved in the second processing liquid, the spread of the second processing liquid is further suppressed by the Marangoni effect.

  Further, according to the fourth invention of the present application, the substrate is vibrated by the second treatment liquid, and foreign matters released from the surface of the substrate by the vibration can be removed by flowing with the first treatment liquid. Further, the spread of the second processing liquid is suppressed by the third processing liquid discharged from the third nozzle. Therefore, damage to the substrate due to cavitation in the second processing liquid can be suppressed.

  In particular, according to the seventh invention of the present application, the spread of the second processing liquid on the upper surface of the substrate is further suppressed.

  In particular, according to the eighth aspect of the present invention, the spread of the second processing liquid toward the first discharge position is further suppressed.

  Particularly, according to the ninth aspect of the present invention, the spread of the second processing liquid toward the first discharge position is further suppressed.

  In particular, according to the tenth invention of the present application, the first processing liquid and the second processing liquid can be separated by blowing the first processing liquid and the second processing liquid to the side of the substrate.

  In particular, according to the twelfth aspect of the present invention, the spread of the second treatment liquid is suppressed even at the start or end of the treatment.

  According to the thirteenth aspect of the present invention, the substrate is vibrated by the treatment liquid to which the ultrasonic wave is applied, and foreign substances released from the surface of the substrate by the vibration can be removed by flowing with another treatment liquid. Further, the spread of the treatment liquid to which the ultrasonic wave is applied is blocked. Therefore, damage to the substrate due to cavitation can be suppressed.

It is the figure which showed the structure of the substrate processing apparatus. It is the flowchart which showed the flow of the foreign material removal process. It is the figure which showed typically the mode at the time of discharge of a process liquid and nitrogen gas. It is a top view of a semiconductor wafer at the time of discharge of processing liquid and nitrogen gas. It is the figure which showed typically the mode at the time of discharge of a process liquid and nitrogen gas. It is a partial top view of a semiconductor wafer at the time of discharge of processing liquid and nitrogen gas. It is a perspective view of a nozzle and a substrate concerning a modification.

  Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings.

<1. Substrate Processing Apparatus According to One Embodiment>
FIG. 1 is a diagram showing a configuration of a substrate processing apparatus 1 according to an embodiment of the present invention. The substrate processing apparatus 1 is a sheet type cleaning apparatus that removes foreign matters such as particles adhering to the surface of a semiconductor wafer 9 in a semiconductor manufacturing process. As shown in FIG. 1, the substrate processing apparatus 1 of this embodiment includes a holding unit 80, a first nozzle 10, a second nozzle 20, a third nozzle 30, a drainage collecting unit 40, and a control unit 50. Yes.

  The holding unit 80 is a mechanism that holds the semiconductor wafer 9 that is a disk-shaped substrate substantially horizontally. The holding portion 80 includes a substantially disc-shaped base portion 81 and a plurality of chuck pins 82 provided on the upper surface of the base portion 81. The plurality of chuck pins 82 are arranged at equiangular intervals on the upper surface near the peripheral edge of the base portion 81. The semiconductor wafer 9 is held by the chuck pins 82 with the device region on which the pattern is formed facing the upper surface side. Each chuck pin 82 contacts the lower surface and outer peripheral end surface of the peripheral edge of the semiconductor wafer 9 and supports the semiconductor wafer 9 at an upper position from the upper surface of the base portion 81 through a gap.

  The first nozzle 10 is a nozzle for discharging the first processing liquid onto the upper surface of the semiconductor wafer 9 held by the holding unit 80. The first nozzle 10 is connected to the first processing liquid supply source 12 through a first pipe 11 in a flow path. A first on-off valve 13 is inserted in the middle of the path of the first pipe 11. For this reason, when the first on-off valve 13 is opened, the first processing liquid is supplied from the first processing liquid supply source 12 to the first nozzle 10 through the first pipe 11. Then, the first processing liquid is discharged from the first nozzle 10 onto the upper surface of the semiconductor wafer 9.

  For example, deionized water (pure water) is used as the first treatment liquid. However, instead of deionized water, a chemical solution such as isopropyl alcohol or hydrofluoroether may be used as the first treatment liquid. In addition, a cleaning liquid in which two or more of deionized water, isopropyl alcohol, and hydrofluoroether are mixed, or an SC-1 cleaning liquid that is a mixed liquid of ammonia water and hydrogen peroxide water is used as the first treatment liquid. May be.

  The second nozzle 20 is a nozzle for discharging the second processing liquid to which ultrasonic vibration is applied to the peripheral portion of the semiconductor wafer 9 held by the holding unit 80. The second nozzle 20 is connected to the second processing liquid supply source 22 through a second pipe 21. A second on-off valve 23 is inserted in the middle of the path of the second pipe 21. For this reason, when the second on-off valve 23 is opened, the second processing liquid is supplied from the second processing liquid supply source 22 to the second nozzle 20 through the second pipe 21. Then, the second processing liquid is discharged from the second nozzle 20 to the peripheral edge of the semiconductor wafer 9.

  The second nozzle 20 incorporates an ultrasonic transducer 24 that generates ultrasonic vibrations. When the ultrasonic vibrator 24 is driven, ultrasonic vibration is applied to the second processing liquid inside the second nozzle 20. Then, the second processing liquid to which ultrasonic vibration is applied is discharged from the second nozzle 20. The ultrasonic vibration may be, for example, a low frequency vibration of 10 kHz to 1 MHz, or a high frequency vibration of 1 MHz or more.

  For example, deionized water (pure water) is used as the second treatment liquid. However, instead of deionized water, a chemical solution such as isopropyl alcohol or hydrofluoroether may be used as the second treatment liquid. In addition, a cleaning liquid in which two or more of deionized water, isopropyl alcohol, and hydrofluoroether are mixed, or an SC-1 cleaning liquid that is a mixed liquid of aqueous ammonia and hydrogen peroxide is used as the second processing liquid. May be.

  The third nozzle 30 is a nozzle for blowing nitrogen gas toward the upper surface of the semiconductor wafer 9 held by the holding unit 80. The third nozzle 30 is connected to the nitrogen gas supply source 32 through a third pipe 31. A third on-off valve 33 is interposed in the middle of the path of the third pipe 31. For this reason, when the third on-off valve 33 is opened, nitrogen gas is supplied from the nitrogen gas supply source 32 through the third pipe 31 to the third nozzle 30. Then, nitrogen gas is blown from the third nozzle 30 toward the upper surface of the semiconductor wafer 9.

  As shown in FIG. 1, the third nozzle 30 is disposed between the first nozzle 10 and the second nozzle 20. Further, if the position on the semiconductor wafer 9 where the first processing liquid is discharged is referred to as “first discharge position” and the position on the semiconductor wafer 9 where the second processing liquid is discharged is referred to as “second discharge position”, The three nozzles 30 blow nitrogen gas toward a “third discharge position” located between the first discharge position and the second discharge position. For this reason, in the foreign matter removal process described later, the spread of the second processing liquid to the first processing liquid side is blocked by nitrogen gas on the upper surface of the semiconductor wafer 9.

  The drainage collecting unit 40 is a part that collects the first processing liquid and the second processing liquid after use. The drainage collection unit 40 includes a cup 41 that annularly surrounds the semiconductor wafer 9 held by the holding unit 80, and a fourth pipe 42 that is connected to the bottom of the cup 41 through a flow path. The first processing liquid discharged from the first nozzle 10 and the second processing liquid discharged from the second nozzle 20 are supplied to the semiconductor wafer 9 and then collected in the cup 41. Thereafter, the first processing liquid and the second processing liquid are discharged to the outside of the substrate processing apparatus 1 through the fourth pipe 42 and are subjected to regeneration processing or disposal processing.

  As conceptually shown in FIG. 1, the control unit 50 is electrically connected to the chuck pin 82, the first on-off valve 13, the second on-off valve 23, the ultrasonic transducer 24, and the third on-off valve 33. It is connected. The control unit 50 may be configured by a computer having an arithmetic processing unit such as a CPU or a memory, or may be configured by an electronic circuit. The control unit 50 controls the chuck pin 82, the first on-off valve 13, the second on-off valve 23, the ultrasonic transducer 24, and the third on-off valve 33 in accordance with user operations, various input signals, or a preset program. To control the operation.

  In addition, the holding | maintenance part 80 mentioned above, the 1st nozzle 10, the 2nd nozzle 20, the 3rd nozzle 30, and the waste liquid collection part 40 are arrange | positioned inside the chamber where temperature and cleanliness were controlled. The control unit 50 also controls operations of a shutter mechanism for opening and closing the loading / unloading port of the chamber and a conveyance mechanism for loading and unloading the semiconductor wafer 9 via the loading / unloading port. Further, the substrate processing apparatus 1 may include a plurality of such chambers and can process a plurality of semiconductor wafers 9 in parallel in the plurality of chambers.

<2. Foreign matter removal processing>
Next, the foreign substance removal process using the substrate processing apparatus 1 will be described. FIG. 2 is a flowchart showing the flow of foreign matter removal processing in the substrate processing apparatus 1. FIG. 3 is a diagram schematically showing a state in which the first processing liquid 15, the second processing liquid 25, and the nitrogen gas 35 are discharged onto the semiconductor wafer 9. FIG. 4 is a top view of the semiconductor wafer 9 when the first processing liquid 15, the second processing liquid 25, and the nitrogen gas 35 are discharged to the semiconductor wafer 9. In FIG. 4, a region where the first processing liquid 15 spreads is indicated by hatching on the upper surface of the semiconductor wafer 9, and a region where the second processing liquid 25 spreads is indicated by cross hatching.

  In the substrate processing apparatus 1, when performing the foreign substance removal processing, the control unit 50 controls the operation of each unit in the substrate processing apparatus 1. As a result, the following operation proceeds.

  The substrate processing apparatus 1 first carries the semiconductor wafer 9 into the chamber by a predetermined transfer mechanism. Further, the plurality of chuck pins 82 of the holding unit 80 are opened to the outside, and the semiconductor wafer 9 is disposed above the base unit 81. Then, the semiconductor wafer 9 is transferred from the transport mechanism to the holding unit 80 by closing the plurality of chuck pins 82 inward. The semiconductor wafer 9 is held by the holding unit 80 in a horizontal posture with the device surface facing the upper surface side (step S1).

  Next, the substrate processing apparatus 1 starts discharging the nitrogen gas 35 from the third nozzle 30 by opening the third on-off valve 33 (step S2). Nitrogen gas is discharged from the third nozzle 30 toward the third discharge position P3 set on the upper surface of the semiconductor wafer 9. The third discharge position P3 is located between the first discharge position P1 from which the first processing liquid 15 is discharged and the second discharge position P2 from which the second processing liquid 25 is discharged. As shown in FIG. 4, in the present embodiment, the third ejection position P <b> 1 is set outside the device region 91 (region indicated by the broken line) where the pattern is formed on the upper surface of the semiconductor wafer 9. Yes.

  Thereafter, while maintaining the third on-off valve 33 in the open state, the first on-off valve 13 and the second on-off valve 23 are also opened, and the ultrasonic transducer 24 is driven. Thereby, while continuing the discharge of the nitrogen gas 35 from the third nozzle 30, the discharge of the first processing liquid 15 from the first nozzle 10 and the discharge of the second processing liquid 25 from the second nozzle 20 are performed. Start (step S3).

  As shown in FIG. 3, the first processing liquid 15 is discharged from the first nozzle 10 toward the first discharge position P <b> 1 set on the upper surface of the semiconductor wafer 9. As shown in FIG. 4, the first discharge position P <b> 1 is located in the device region 91 of the semiconductor wafer 9. The second processing liquid 25 is discharged from the second nozzle 20 toward the second discharge position P <b> 2 set at the peripheral edge of the semiconductor wafer 9. As shown in FIG. 4, the second discharge position P <b> 2 is located outside the device region 91. In the present embodiment, the second discharge position P <b> 2 is set on the tapered surface formed on the peripheral edge of the semiconductor wafer 9.

  Ultrasonic vibration is applied to the second processing liquid 25 discharged from the second nozzle 20 by the ultrasonic vibrator 24. For this reason, when the second processing liquid 25 is supplied to the semiconductor wafer 9, the ultrasonic vibration 9 </ b> B propagates from the second processing liquid 25 to the semiconductor wafer 9. Further, the ultrasonic vibration 9B propagates not only in the vicinity of the second discharge position P2 but also to the entire semiconductor wafer 9 as shown in FIG. As a result, the upper surface of the semiconductor wafer 9 vibrates, and the foreign matter 9P is released from the upper surface of the semiconductor wafer 9 on which the pattern 92 is formed, as shown in an enlarged manner in FIG.

  A liquid flow 15 </ b> F of the first processing liquid 15 is formed above the device region 91 of the semiconductor wafer 9. For this reason, the foreign matter 9P released from the device region 91 rides on the liquid flow 15F and flows to the outside of the semiconductor wafer 9. As described above, the substrate processing apparatus 1 according to the present embodiment includes the ultrasonic vibration 9B propagating to the semiconductor wafer 9 itself and the liquid flow 15F of the first processing liquid 15 flowing along the upper surface of the semiconductor wafer 9. The foreign matter 9 </ b> P is removed from the surface of 9.

  In Step S3, nitrogen gas 35 is blown from the third nozzle 30 toward the third discharge position P3 set between the first discharge position P1 and the second discharge position P2. For this reason, the spreading of the second treatment liquid 25 toward the inner peripheral side is blocked by the wind pressure of the nitrogen gas 35. Therefore, the contact between the pattern 92 on the semiconductor wafer 9 and the second processing liquid 25 is suppressed. As a result, damage to the pattern 92 due to cavitation is suppressed.

  In particular, in the present embodiment, as shown in FIG. 3, the discharge direction of the third nozzle 30 is directed obliquely toward the second discharge position P2. Thereby, a stronger wind pressure toward the outer peripheral side of the semiconductor wafer 9 is given to the second processing liquid 25. As a result, the spread of the second treatment liquid 25 toward the device region 91 is further suppressed.

  As shown in FIG. 4, in the present embodiment, the first treatment liquid 15 and the second treatment are performed in the band-like region 93 extending from one end of the semiconductor wafer 9 to the other end by blowing nitrogen gas 35. Liquid 25 is removed. And by this strip | belt-shaped area | region 93, the 1st process liquid 15 and the 2nd process liquid 25 are parted, and the 1st process liquid 15 and the 2nd process liquid 25 are maintained in non-contact. Thereby, propagation of ultrasonic vibration from the second treatment liquid 25 to the first treatment liquid 15 is suppressed. As a result, damage to the pattern 92 due to cavitation is further suppressed.

  The substrate processing apparatus 1 continues the discharge of the first processing liquid 15, the second processing liquid 25, and the nitrogen gas 35 for a predetermined time. Thereafter, the substrate processing apparatus 1 closes the first on-off valve 13 and the second on-off valve 23 and stops driving the ultrasonic transducer 24. Thereby, the discharge of the first treatment liquid 15 from the first nozzle 10 and the discharge of the second treatment liquid 25 from the second nozzle 20 are stopped (step S4). Subsequently, the third on-off valve 33 is closed. Thereby, discharge of the nitrogen gas 35 from the 3rd nozzle 30 is stopped (step S5).

  In the substrate processing apparatus 1, the discharge of the nitrogen gas 35 is started before the discharge of the first processing liquid 15 and the second processing liquid 25 is started as in steps S <b> 2 to S <b> 3 described above. Moreover, after stopping the discharge of the 1st process liquid 15 and the 2nd process liquid 25 like step S4-S5 mentioned above, the discharge of the nitrogen gas 35 is stopped. In this way, it is possible to suppress the spread of the second processing liquid 25 toward the first processing liquid 15 even at the start and end of discharge of the first processing liquid 15 and the second processing liquid 25.

  Thereafter, the substrate processing apparatus 1 opens the plurality of chuck pins 82 to the outside, and unloads the semiconductor wafer 9 from the holding unit 80 to the outside of the chamber by a predetermined transfer mechanism (step S6).

<3. Modification>
Although one embodiment of the present invention has been described above, the present invention is not limited to the above embodiment.

  For example, as shown in FIG. 5, the discharge direction of the second nozzle 20 may be directed obliquely with respect to the vertical direction. In the example of FIG. 5, the second discharge position P2 is located on the outer peripheral side of the semiconductor wafer 9 from the first discharge position P1. The discharge direction of the second nozzle 20 is directed obliquely toward the outer peripheral side of the semiconductor wafer 9. In this way, a velocity component toward the outside of the semiconductor wafer 9 is given to the second processing liquid 25 discharged from the second nozzle 20. Accordingly, the inward spreading of the second processing liquid 25 can be further suppressed.

  In the above embodiment, the second processing liquid is discharged toward the tapered surface provided at the peripheral edge of the semiconductor wafer 9. However, the peripheral edge of the semiconductor wafer 9 is rectangular or curved. The shape which has a longitudinal section may be sufficient. The second nozzle 20 may discharge the second processing liquid 25 toward the upper surface or the outermost end surface of the semiconductor wafer 9. However, it is preferable that the second discharge position P2 is the peripheral edge of the semiconductor wafer 9 in that the spread of the second processing liquid 25 on the upper surface of the semiconductor wafer 9 can be further suppressed.

  Further, the ejection direction of the third nozzle 30 may be a direction different from that in the above embodiment. For example, as shown in FIG. 6, the third nozzle 30 may be directed in a direction crossing a straight line connecting the first discharge position P1 and the second discharge position P2 in a top view. In this way, the first processing liquid 15 and the second processing liquid 25 can be separated from each other by blowing the first processing liquid 15 and the second processing liquid 25 to the side of the semiconductor wafer 9.

  Further, the first nozzle 10 may be swung along the upper surface of the semiconductor wafer 9. Further, the third nozzle 30 may be brought closer to the semiconductor wafer 9 than the first nozzle 10 and the second nozzle 20 in order to increase the wind pressure of nitrogen gas on the upper surface of the semiconductor wafer 9. The substrate processing apparatus 1 may discharge the first processing liquid 15, the second processing liquid 25, and nitrogen gas onto the semiconductor wafer 9 while rotating the semiconductor wafer 9 about the vertical axis. .

  Further, as shown in FIG. 7, a slit nozzle having a slit-like discharge port may be applied to one or both of the first nozzle 10 and the second nozzle 20. In particular, when a slit nozzle is applied to the second nozzle 20, it is easy to form a band-like region 93 from which the processing liquid is removed on the upper surface of the semiconductor wafer 9. Therefore, the 1st processing liquid 15 and the 2nd processing liquid 25 can be divided more easily.

  The gas discharged from the third nozzle 30 may be a gas other than nitrogen gas. For example, dry air may be used instead of nitrogen gas. Further, a mixed gas of nitrogen gas or dry air and vapor of an organic solvent such as isopropyl alcohol may be discharged from the third nozzle 30. When the vapor of the organic solvent is mixed, the organic solvent dissolves in the second processing liquid 25, and a flow toward the outer peripheral side of the semiconductor wafer 9 occurs in the second processing liquid 25 due to the Marangoni effect. As a result, the spread of the second treatment liquid 25 is further suppressed.

  Further, the third processing liquid may be discharged from the third nozzle 30 instead of the gas. However, the third processing liquid discharged from the third nozzle 30 has a surface tension higher than that of the first processing liquid 15 and the second processing liquid 25 in order to suppress the spread of the first processing liquid 15 and the second processing liquid 25. It is desirable to use a small liquid. For example, it is desirable to use an organic solvent such as isopropyl alcohol or hydrofluoroether. Further, if a liquid having a low surface tension is used, even if ultrasonic vibration propagates to the liquid, cavitation is unlikely to occur in the liquid. Therefore, damage to the pattern 92 due to cavitation can be suppressed.

  As described above, the ultrasonic vibration applied by the ultrasonic transducer 24 may be a low-frequency vibration of 10 kHz to 1 MHz or a high-frequency vibration of 1 MHz or more. However, if high-frequency vibration is used, cavitation energy generated in the processing liquid can be suppressed as compared with low-frequency vibration. Therefore, if high frequency vibration is used, even if the second processing liquid 25 comes into contact with the device region 91 of the semiconductor wafer 9, damage to the pattern 92 can be suppressed.

  In addition, the substrate processing apparatus 1 is intended for the semiconductor wafer 9, but the substrate processing apparatus and the substrate processing method of the present invention are a glass substrate for a liquid crystal display device, a glass substrate for a PDP, a glass substrate for a photomask, a color Other precision electronic device substrates such as a filter substrate, a recording disk substrate, and a solar cell substrate may be targeted.

  Moreover, about the detailed structure of a substrate processing apparatus, you may differ from the shape shown by each figure of this application. Moreover, you may combine suitably each element which appeared in said embodiment and modification in the range which does not produce inconsistency.

DESCRIPTION OF SYMBOLS 1 Substrate processing apparatus 9 Semiconductor wafer 9B Ultrasonic vibration 9P Foreign material 10 1st nozzle 15 1st process liquid 15F Liquid flow 20 2nd nozzle 24 Ultrasonic vibrator 25 2nd process liquid 30 3rd nozzle 35 Nitrogen gas 40 Drainage collection Collection unit 50 Control unit 80 Holding unit 91 Device region 92 Pattern 93 Band-shaped region P1 First discharge position P2 Second discharge position P3 Third discharge position

Claims (13)

A substrate processing apparatus for removing foreign substances from the surface of a substrate,
A holding part for holding the substrate substantially horizontally;
A first nozzle that discharges a first treatment liquid to a first discharge position of the substrate held by the holding unit;
A second nozzle for discharging a second treatment liquid to which ultrasonic waves are applied to a second discharge position of the substrate held by the holding unit;
A third nozzle that blows gas between the first discharge position and the second discharge position;
A substrate processing apparatus comprising: The substrate processing apparatus according to claim 1,
A substrate processing apparatus, wherein the gas is nitrogen gas or dry air. The substrate processing apparatus according to claim 2,
The substrate processing apparatus, wherein the gas is a mixed gas of nitrogen gas or dry air and an organic solvent vapor. A substrate processing apparatus for removing foreign substances from the surface of a substrate,
A holding part for holding the substrate substantially horizontally;
A first nozzle that discharges a first treatment liquid to a first discharge position of the substrate held by the holding unit;
A second nozzle for discharging a second treatment liquid to which ultrasonic waves are applied to a second discharge position of the substrate held by the holding unit;
A third nozzle for discharging a third treatment liquid having a surface tension lower than that of the second treatment liquid between the first discharge position and the second discharge position;
A substrate processing apparatus comprising: The substrate processing apparatus according to claim 4,
The substrate processing apparatus, wherein the third processing liquid is an organic solvent. The substrate processing apparatus according to claim 5,
A substrate processing apparatus, wherein the organic solvent is either isopropyl alcohol or hydrofluoroether. A substrate processing apparatus according to any one of claims 1 to 6,
The substrate processing apparatus, wherein the second discharge position is a peripheral edge of the substrate. A substrate processing apparatus according to any one of claims 1 to 7,
The second discharge position is located on the outer peripheral side of the substrate from the first discharge position,
The substrate processing apparatus, wherein the second nozzle is directed vertically downward or obliquely toward the outer peripheral side of the substrate. A substrate processing apparatus according to any one of claims 1 to 8,
The substrate processing apparatus, wherein the third nozzle is directed vertically downward or obliquely toward the second discharge position. A substrate processing apparatus according to any one of claims 1 to 8,
The substrate processing apparatus, wherein the third nozzle is directed in a direction crossing a straight line connecting the first discharge position and the second discharge position in a top view. A substrate processing apparatus according to any one of claims 1 to 10, wherein
The substrate processing apparatus, wherein the second processing liquid is deionized water, isopropyl alcohol, hydrofluoroether, or a mixed liquid thereof. A substrate processing apparatus according to any one of claims 1 to 11, wherein
A substrate further comprising: a control unit that starts discharging the third nozzle before starting discharging the second nozzle, stops discharging the second nozzle, and then stops discharging the third nozzle. Processing equipment. A substrate processing method for removing foreign substances from the surface of a substrate,
While supplying the processing liquid to which the ultrasonic wave is applied to the substrate, the spreading of the processing liquid on the surface of the substrate is blocked, and a liquid flow caused by the other processing liquid is formed in another region of the surface of the substrate. Substrate processing method.

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