TW202031606A - Method for manufacturing at least one of chip and frame body capable of preventing cracks from being generated in a region corresponding to at least one of a chip and a frame body - Google Patents

Abstract

An object of the invention is to prevent cracks from being generated in a region corresponding to at least one of a chip and a frame body when manufacturing at least one of a chip having a predetermined shape and a frame body. To achieve the object, the method for manufacturing at least one of chip and frame body is provided to process a plate-shaped workpiece to manufacture at least one of a chip having a predetermined shape and a frame body in which the chip is divided from the workpiece. The method comprises the following steps of: a shield tunnel forming step in which a laser beam is irradiated from the front side of the workpiece along a predetermined cutting line of the workpiece in such a way that a condensing region of the pulsed laser beam having a wavelength transmissible to the workpiece is positioned inside the workpiece, thereby forming a plurality of shield tunnels, each of which having a pore and a modified region surrounding the pore, along the predetermined cutting line; and a cutting step in which, after the shield tunnel forming step, ultrasonic waves are applied to the workpiece through a liquid to break a plurality of shield tunnels formed along the predetermined cutting line so as to divide the chip from the workpiece.

Description

Method for manufacturing at least any one of chip and frame

The present invention relates to a method of processing a plate-shaped workpiece to produce at least any one of a wafer of a predetermined shape and a frame after the wafer is divided from the workpiece.

Portable devices such as smartphones and tablet PCs are equipped with cameras, and in order to protect the objective lens, quartz glass, sapphire, etc. are installed on the outside of the camera objective lens (that is, the side of the subject) The formed disc-shaped cover glass.

The cover glass is, for example, manufactured by the method described below: a predetermined pattern composed of a photoresist material is formed on a quartz glass substrate, and then an etching solution such as hydrofluoric acid is used to remove areas not covered by the photoresist material by etching (for example, Refer to Patent Document 1). However, the etching process has the so-called time-consuming and poor productivity.

Therefore, a method has been proposed in which a laser beam is irradiated on a substrate formed of quartz glass, sapphire, etc., thereby forming a modified region called a shield channel with pores and a modified region surrounding the pores ( For example, refer to Patent Document 2). In this method, after a plurality of shield channels are formed along the predetermined dividing line of the substrate, ultrasonic waves are applied to the substrate using an ultrasonic application pad or an ultrasonic oscillator, thereby dividing the substrate along the predetermined dividing line.

In the method described in Patent Document 2, since the shield channel is destroyed by applying ultrasonic waves, the substrate can be processed in a shorter time than the etching process which is a chemical reaction process. However, when the ultrasonic wave is applied, the ultrasonic wave imparting pad is made to contact one side of the workpiece, or the ultrasonic oscillator is made to contact the other side of the workpiece through the protective film, so the area outside the shield channel ( For example, the area corresponding to a small piece of object (that is, a wafer) of a predetermined shape like a cover glass may have a crack. [Literature Technical Literature] [Patent Literature]

[Patent Document 1] JP 2012-148955 A. [Patent Document 2] JP 2015-226924 A.

[The problem to be solved by the invention] The present invention was made in view of this problem, and its object is to suppress the correspondence when processing a workpiece to manufacture at least one of a wafer of a predetermined shape and a frame after the wafer is divided from the workpiece. Cracks occur in at least one of the wafer and the frame.

[Technical means to solve the problem] According to an aspect of the present invention, there is provided a method of manufacturing at least any one of a wafer and a frame, which is to process a plate-shaped workpiece to produce a wafer of a predetermined shape and to separate the wafer from the workpiece At least any one of the rear frame bodies, the method includes the following steps: a shield channel forming step, which positions the condensing area of a pulsed laser beam with a wavelength penetrating the workpiece on the workpiece In the internal method, the laser beam is irradiated from the front side of the workpiece along the planned dividing line of the workpiece, thereby forming as many degraded areas with individual pores and surrounding pores along the planned dividing line A shield channel; and a dividing step, which, after the shield channel forming step, applies ultrasonic waves to the object to be processed through the liquid, thereby destroying the plurality of shield channels formed along the predetermined dividing line, so as to be processed The object is divided into wafers.

Preferably, the planned dividing line is set in a region more inside than the outer peripheral end of the workpiece so as not to reach the outer peripheral end of the workpiece, and in the step of forming the shield channel, it is positioned along the The predetermined dividing line on the inner side of the outer peripheral end forms the multiple shield passages. Also, preferably, the liquid is water.

[Invention Effect] In the method of manufacturing at least any one of a wafer and a frame body of one aspect of the present invention, after forming a plurality of shield channels along the predetermined dividing line of the workpiece in the shield channel forming step, the pair Ultrasonic waves are applied to the workpiece, thereby breaking a plurality of shield channels and dividing the wafer from the workpiece.

In this way, in the dividing step of the present invention, since the ultrasonic wave application pad or the like is not brought into contact with the workpiece, it is possible to suppress the occurrence of cracks in the region corresponding to at least one of the predetermined shape of the wafer and the frame. Furthermore, since the shield channel is destroyed by applying ultrasonic waves to the workpiece, the workpiece can be processed in a shorter time than the etching process.

With reference to the attached drawings, an embodiment of the present invention will be described. FIG. 1(A) is a perspective view of the workpiece 11. The workpiece 11 is a plate-shaped (that is, disk-shaped) substrate having a circular front surface 11 a and a back surface 11 b and a predetermined thickness of about 200 μm to 700 μm.

The workpiece 11 is formed of, for example, sapphire, various glasses, and the like. In addition, various glasses include, for example, quartz glass, borosilicate glass, aluminum silicate glass, soda lime glass, and alkali-free glass.

As shown by a broken line in FIG. 1(A), a plurality of planned dividing lines 13 are set in the workpiece 11. Each planned division line 13 is set in a region inside the outer peripheral end 11c so as not to reach the outer peripheral end 11c of the workpiece 11.

The respective planned dividing lines 13 are ring-shaped and are separately arranged so as not to contact each other, but they may also be in contact with each other. In addition, the shape of the planned dividing line 13 is not limited to a ring shape. The shape of the planned dividing line 13 may also be a polygonal shape such as a triangle or other desired shapes.

The to-be-processed object 11 is processed in a state (that is, the state of the to-be-processed object unit 19) fixed to the opening of the metal ring frame 17 through the cutting adhesive film 15, for example. FIG. 1(B) is a perspective view of the workpiece unit 19.

The dicing film 15 is a film made of resin. The dicing film 15 has a laminated structure of an adhesive layer (not shown) with adhesiveness and a base layer (not shown) with adhesiveness. The adhesive layer is, for example, an ultraviolet curable resin layer, and is provided on the entire surface of one surface of the resin base layer. If the adhesive layer is irradiated with ultraviolet rays, the adhesive force of the adhesive layer is reduced, and the protective film becomes easy to peel off from the workpiece 11.

The ring frame 17 has an opening with a larger diameter than the diameter of the workpiece 11. In the state where the workpiece 11 is arranged in this opening, the adhesive layer side of the dicing film 15 is attached to the back surface 11b side of the workpiece 11 and one of the surfaces of the ring frame 17 to form the workpiece unit 19.

In addition, in the case of processing the to-be-processed object 11, it is not necessary to form the to-be-processed unit 19. That is, the workpiece 11 may be processed without using the dicing film 15 and the ring frame 17.

In this embodiment, the workpiece 11 is processed using the laser processing device 2. FIG. 2 is a perspective view of the laser processing device 2. The laser processing device 2 includes a base 4 that supports each structure. The base 4 includes a rectangular parallelepiped base 6 and a wall 8 that protrudes upward (for example, the +Z direction) at an end of the base 6 on one side (for example, the −Y direction) in the Y axis direction.

A chuck table 10 is arranged above the base 6. A plurality of clamping units are fixed to the outer peripheral side surface of the chuck table 10. For example, in the case where the chuck table 10 is viewed from above, one clamping unit is provided at each position of the clock at 0 o'clock, 3 o'clock, 6 o'clock, and 9 o'clock.

A Y-axis moving unit 16 that moves the chuck table 10 in the Y-axis direction is provided under the chuck table 10 (for example, in the -Z direction). The Y-axis moving unit 16 includes a pair of Y-axis guide rails 18 fixed to the upper surface of the base 6 and parallel to the Y-axis direction.

A Y-axis moving table 20 is slidably provided on the Y-axis guide 18. A nut portion (not shown) is provided on the back side (lower surface side) of the Y-axis moving table 20, and the nut portion is rotatably coupled with Y-axis balls arranged parallel to the Y-axis guide 18 Screw 22.

A Y-axis pulse motor 24 is connected to one end of the Y-axis ball screw 22. If the Y-axis ball screw 22 is rotated by the Y-axis pulse motor 24, the Y-axis moving table 20 will move in the Y-axis direction along the Y-axis guide 18.

An X-axis moving unit 26 that moves the chuck table 10 in the X-axis direction perpendicular to the Y-axis direction is provided on the front side (upper surface side) of the Y-axis moving table 20. The X-axis moving unit 26 includes a pair of X-axis guide rails 28 fixed to the upper surface of the Y-axis moving table 20 and parallel to the X-axis direction.

An X-axis moving table 30 is slidably provided on the X-axis guide 28. A nut portion (not shown) is provided on the back side (lower surface side) of the X-axis moving table 30, and an X-axis ball screw 32 arranged parallel to the X-axis guide 28 is coupled to the nut portion in a rotatable manner. .

An X-axis pulse motor 34 is connected to one end of the X-axis ball screw 32. When the X-axis ball screw 32 is rotated by the X-axis pulse motor 34, the X-axis moving table 30 moves in the X-axis direction along the X-axis guide 28.

A support base 36 is provided on the front side (upper surface side) of the X-axis moving table 30. A chuck table 10 having a substantially disc shape is arranged above the support table 36. The chuck table 10 is connected to a rotary drive source (not shown) provided below, and is configured to be rotatable by the rotary drive source.

A disc-shaped porous material plate made of porous ceramics or the like is provided on the surface side of the chuck table 10. The porous plate is connected to a suction source (not shown) such as an ejector via a flow path (not shown) provided inside the chuck table 10. The negative pressure generated by the suction source generates suction on the surface of the porous plate (that is, the holding surface 10a).

A laser beam irradiation unit 12 is provided above the chuck table 10. One end of the laser beam irradiation unit 12 is fixed to the surface on the other side (for example, +Y direction) of the upper part of the wall 8 in the Y-axis direction.

A processing head 12a is provided at the other end of the laser beam irradiation unit 12. The pulse-shaped laser beam is irradiated approximately perpendicularly from the processing head 12a toward the holding surface 10a.

An imaging unit 12 b is provided on one direction (−X direction) side of the X axis direction of the laser beam irradiation unit 12. The imaging unit 12b has an objective lens (not shown) into which reflected light from a subject enters. The reflected light from the subject passes through an objective lens or the like and is guided to an imaging element (not shown) of the imaging unit 12b.

Next, use Figure 3, Figure 4 (A), Figure 4 (B), Figure 5 (A), Figure 5 (B), Figure 5 (C), Figure 6 (A), Figure 6 (B) and Figure 7 A description will be given of a method for manufacturing a wafer and a frame in which the workpiece 11 is processed to form a wafer and a frame of a predetermined shape. FIG. 7 is a flowchart showing the manufacturing method of the wafer and the frame of the first embodiment.

In the manufacturing method of the wafer and the frame body of the first embodiment, first, a shield channel is formed in the workpiece 11 using the laser processing apparatus 2 (a shield channel forming step (S10)). FIG. 3 is a perspective view showing the step (S10) of forming a shield passage.

In the shield passage forming step (S10), first, the workpiece unit 19 is placed on the holding surface 10a with the front surface 11a of the workpiece 11 facing upward. In this state, the suction source is activated to cause negative pressure to act on the holding surface 10a. Furthermore, the ring frame 17 is fixed by a clamping unit. Thereby, the back surface 11b side of the to-be-processed object 11 is held by the chuck table 10 through the cutting adhesive film 15.

Next, the front surface 11a of the workpiece 11 is irradiated with a pulsed laser beam L having a wavelength penetrating to the workpiece 11 from the processing head 12a. At this time, the condensing area of the laser beam L is positioned inside the workpiece 11.

In the state where the condensed area of the laser beam L irradiated from the front side 11a of the workpiece 11 is positioned inside the workpiece 11, the Y-axis moving unit 16 and the X-axis moving unit 26 are activated to make the chuck The stage 10 moves in the Y-axis direction and the X-axis direction.

Thereby, the laser beam L is irradiated along the planned dividing line 13 while moving the processing head 12a relative to the chuck table 10. In addition, in this specification, the relative movement speed of the processing head 12a and the chuck table 10 in the X-Y plane direction is referred to as processing speed.

For example, the processing condition is set as follows to process the workpiece 11. The wavelength of the laser beam L: 1064nm Pulse energy: 50μJ Pulse repetition frequency: 1kHz Processing speed in X-Y plane direction: 20mm/s Number of passes: 3

In addition, the so-called pulse energy means the energy of one pulse unit. In addition, the number of strokes means the number of times the laser beam L is irradiated along a planned dividing line 13 in a state where the condensing area is positioned inside the workpiece 11.

For example, in the case where the thickness of the workpiece 11 is 300 μn, first, the light-concentrating area is positioned at the first depth position at a distance of 100 μm from the back surface 11b, and the workpiece 11 is processed along all the planned dividing lines 13 ( The first trip).

Next, the condensing area is positioned at a second depth position with a distance of 100 μm to 200 μm from the back surface 11 b, and the workpiece 11 is processed along all the planned dividing lines 13 (second stroke).

After that, the light-concentrating area is positioned at a third depth position with a distance of 200 μm to 300 μm from the back surface 11 b (that is, the front surface 11 a ), and the workpiece 11 is processed along all the planned dividing lines 13 (third stroke). Thereby, a plurality of shield passages along all the planned dividing lines 13 are formed from the back surface 11b to the front surface 11a. In addition, the number of strokes is not limited to 3. Under the premise of properly adjusting the pulse energy, etc., the number of strokes can also be set to 1 or 2.

However, if the processing speed in the X-Y plane direction exceeds 50 mm/s, it becomes difficult to form a shield channel along the planned dividing line 13. This is considered to be caused by various reasons, for example, because the shield channel is formed in a meandering manner with respect to the planned dividing line 13. Therefore, the processing speed in the X-Y plane direction is preferably 50 mm/s or less.

Fig. 4(A) is a perspective view showing the structure of a shield tunnel 11d. In addition, in FIG. 4(A), a part of the workpiece 11 in the thickness direction (for example, the direction from the front surface 11a to the back surface 11b) is omitted. Each shield channel 11d has a pore 11e formed along the thickness direction of the workpiece 11. The pore 11e is a substantially cylindrical elongated space with a diameter of about 1 μm.

The shield tunnel 11d also has a modified region 11f formed to surround the side surface of the pore 11e. The modified region 11f is, for example, a substantially cylindrical region having a diameter of about 5 μm to about 20 μm, and the pores 11e are formed so as to cover the height direction of the cylinder and pass through the center of the circle of the bottom surface of the cylinder.

The altered area 11f is an area where a part of the workpiece 11 receives energy from the laser beam L, and thereby the structure, density, etc., are changed compared to the part not irradiated by the laser beam L. For example, when the workpiece 11 is formed of a single crystal material such as sapphire, the modified region 11f becomes an amorphous region or a polycrystalline region.

The plurality of shield passages 11 d are formed along the planned dividing line 13. 4(B) is a partial cross-sectional view showing the workpiece 11 of a plurality of shield passages 11 d formed along the planned dividing line 13.

In FIG. 4(B), the side portions of the metamorphic regions 11f of two adjacent shield channels 11d along the planned dividing line 13 are connected, but the sides of the two metamorphic regions 11f may also be along the planned dividing line 13 and separated from each other. In addition, in FIG. 4(B), a part of the thickness direction of the workpiece 11 is omitted.

After the shield channel forming step (S10), the ultrasonic wave applying device 38 is used to apply ultrasonic waves to the workpiece 11 through a liquid 40 such as water (for example, pure water) to break the shield channel 11d (dividing step (S20)) . FIG. 5(A) is a partial cross-sectional side view of the ultrasonic wave application device 38.

The ultrasonic wave application device 38 has a container 42. In the container 42, the liquid 40 is filled to a predetermined height position. A plurality of legs 44 that can expand and contract in the height direction of the container 42 are arranged inside the container 42, and the bottom of the legs 44 is fixed to the bottom of the inside of the container 42. In addition, in FIG. 5(A), each leg part 44 extended to the maximum state is shown.

An annular support portion 46 is fixed to the upper end of each leg portion 44. The ring frame 17 of the above-mentioned workpiece unit 19 is placed on the upper surface of the support portion 46. A plurality of clamping units 48 are provided on the outer peripheral side surface of the support portion 46.

The clamping units 48 are discretely arranged at different positions in the circumferential direction of the support portion 46. For example, in the case where the supporting portion 46 is viewed from above, the two clamping units 48 are provided at the positions of 0 o'clock and 6 o'clock of the clock. Also, for example, in the case where the support portion 46 is viewed from above, the four clamping units 48 are provided at the positions of 0 o'clock, 3 o'clock, 6 o'clock, and 9 o'clock of the clock.

An ultrasonic generating unit 50 is fixed to the bottom of the inner side of the container 42. The ultrasonic generating unit 50 has, for example, a piezoelectric element (not shown) formed using a piezoelectric material such as lead zirconate titanate (PZT).

By applying a predetermined AC voltage to the piezoelectric element, the piezoelectric element vibrates. In this way, the ultrasonic generating unit 50 generates ultrasonic waves with a predetermined frequency (for example, a frequency of 20 kHz to 100 kHz) exceeding 20 kHz.

In the dividing step (S20 ), first, as shown in FIG. 5(A), the workpiece unit 19 is placed on the support 46. Then, the upper part of the ring frame 17 is pressed by each clamping unit 48. Thereby, the workpiece unit 19 is fixed by the clamping unit 48 and the support portion 46.

After that, the leg portion 44 is shortened to a predetermined length so that the workpiece 11 is positioned lower than the water level of the liquid 40 and higher than the position of the ultrasonic generating unit 50. Thereby, the entire to-be-processed object unit 19 is immersed in the liquid 40. By keeping the foot 44 at a predetermined length, the distance between the front surface 11a (or the back surface 11b) and the ultrasonic generating unit 50 can be fixed.

In addition, the height position of the workpiece 11 may be adjusted to a predetermined position where ultrasonic waves are easily transmitted. For example, in the case where the standing wave wavelength of the ultrasonic wave generated in the liquid 40 is λ, the workpiece 11 may be positioned at a distance {(2n-1)λ}/4 from the upper end of the ultrasonic wave generating unit 50 (Where n is a natural number greater than 1).

After the workpiece 11 is positioned at an appropriate height position, a predetermined AC voltage is applied to the ultrasonic wave generating unit 50 to generate ultrasonic waves. Ultrasonic waves are conducted in the liquid 40 in the form of density waves (ie, longitudinal waves). FIG. 5(B) is a diagram showing a state in which ultrasonic waves are applied to the workpiece 11 through the liquid 40.

The deformed area 11f of the shield tunnel 11d is weaker than other areas of the workpiece 11, and therefore can be destroyed by ultrasonic vibration. Thereby, compared with the case where the ultrasonic wave application pad is brought into contact with the workpiece 11, it is possible to suppress the occurrence of cracks in regions other than the planned dividing line 13, and the workpiece 11 can be processed in a shorter time than the etching process.

In addition, by disposing the liquid 40 between the workpiece 11 and the ultrasonic generating unit 50, compared with the case where only air or other gas exists between the workpiece 11 and the ultrasonic generating unit 50, the ultrasonic conduction can be reduced. Acoustic impedance when reaching the workpiece 11. That is, the liquid 40 functions as an acoustic wave matching layer that improves the transmission efficiency of ultrasonic waves more than air.

In addition, since the liquid 40 enters the pores 11e, ultrasonic waves can also be conducted in the pores 11e. Therefore, compared to the case where ultrasonic waves are applied to the workpiece 11 in a state where the liquid 40 is not present in the pores 11e (for example, the workpiece 11 is exposed to an atmospheric pressure environment), the deteriorated area 11f can be destroyed more efficiently .

In addition, by using water as the liquid 40 without using chemicals, chemical liquids, etc., compared with etching treatment, wastewater treatment becomes easier. Furthermore, it is also advantageous that it is not necessary to perform processing to impart chemical resistance such as acid resistance to the leg portion 44, the support portion 46, and the container 42.

However, in the present embodiment, each planned division line 13 is set in a region more inside than the outer peripheral end portion 11c of the workpiece 11. Therefore, even if the planned dividing line 13 straddles the front surface 11a of the workpiece 11 in the vertical and horizontal directions and reaches the outer peripheral end 11c, the dicing film 15 is expanded (expanded), and the workpiece 11 cannot be divided.

Therefore, in the case where each planned division line 13 is set in a region more inside than the outer peripheral end 11c of the workpiece 11, applying ultrasonic waves to the workpiece 11 through the liquid 40 is used when dividing the workpiece 11 As useful.

In addition, although the workpiece 11 is processed in the state of the workpiece unit 19 in this embodiment, the workpiece 11 may be processed without using the dicing film 15 and the ring frame 17. In this case, for example, a net-shaped member or a plate-shaped member is provided on the upper surface of the annular support portion 46, and the workpiece 11 is placed on this member. In this state, ultrasonic waves are applied to the workpiece 11 through the liquid 40 to divide the workpiece 11.

After the dividing step (S20), a plurality of wafers 21 and the like divided from the workpiece 11 are picked up (picking step (S30)). FIG. 5(C) is a diagram showing how the wafer 21 is picked up.

In the pick-up step (S30), in order to reduce the adhesive force of the adhesive layer of the dicing adhesive film 15, an ultraviolet irradiation device (not shown) that irradiates the dicing adhesive film 15 with ultraviolet rays is used. In addition, in order to transport the wafer 21, a transport device 54 arranged above the ultrasonic application device 38 is used.

The conveying device 54 has a wrist 54a. This wrist 54a can move in the X-axis (or Y-axis) direction and the Z-axis direction, for example. The upper surface of the disc-shaped head 54b is fixed to the lower end of the arm 54a. A plurality of suction pads 54c are provided on the lower surface of the head 54b. Each suction pad 54c is arranged at a position corresponding to the position of the wafer 21.

Each adsorption pad 54c has a flow path (not shown) to which a suction source (not shown) such as an ejector is connected. One end (ie, opening) of this flow path is exposed under the suction pad 54c. The negative pressure generated by the suction source generates suction at the opening of the suction pad 54c.

In the pick-up step (S30 ), first, the legs 44 are extended and the workpiece unit 19 is positioned above the water level of the liquid 40. Then, the ultraviolet irradiation device is arranged between the bottom of the workpiece unit 19 and the water level of the liquid 40, and the dicing film 15 is irradiated with ultraviolet rays. Thereby, the adhesive force of the adhesive layer will be reduced.

Next, the arm 54a is moved in the X-axis direction and positioned directly above the workpiece 11. After that, the arm 54a is moved in the Z-axis direction, and after the suction pad 54c is brought into contact with the wafer 21, the suction source is activated to suck the wafer 21 by the suction pad 54c.

Next, the arm 54 a is moved in the Z-axis direction to peel the wafer 21 from the dicing adhesive film 15, and then moved in the X-axis direction, and each wafer 21 is transferred to a storage tray (not shown) that contains the wafer 21. Furthermore, the remaining part (that is, the frame body 23) of the workpiece 11 after the wafers 21 have been taken out is transferred to another storage tray (not shown) by another transfer device (not shown) or the transfer device 54.

In this way, the workpiece 11 is separated into a plurality of wafers 21 each having a disk shape and a frame 23 in which all the wafers 21 are divided from the workpiece 11. FIG. 6(A) is a perspective view of a wafer 21. The wafer 21 is used as a cover glass for protecting an objective lens of a camera, for example.

FIG. 6(B) is a perspective view of a frame 23. The frame 23 is used as a screen having an opening corresponding to the size of the wafer 21, for example. In this way, in this embodiment, a plurality of wafers 21 and one frame 23 can be manufactured from one workpiece 11.

However, although both the plurality of wafers 21 and the frame body 23 are manufactured in this embodiment, the manufacturing method of this embodiment can also be regarded as a method of manufacturing any one of the plurality of wafers 21 and the frame body 23. For example, as long as the workpiece 11 is processed for the purpose of manufacturing the wafer 21 from the workpiece 11, the manufacturing method of this embodiment can be regarded as a method of manufacturing the wafer 21.

Moreover, for example, as long as the workpiece 11 is processed for the purpose of manufacturing the frame 23 from the workpiece 11, the manufacturing method of the present embodiment can be regarded as a method of manufacturing the frame 23. Therefore, the manufacturing method of this embodiment is also a method of manufacturing at least one of the wafer 21 and the frame 23.

In addition, in order to irradiate ultraviolet rays, the ultraviolet irradiation device may not be arranged between the bottom of the workpiece unit 19 and the water level of the liquid 40. For example, after the legs 44 are extended and the workpiece unit 19 is positioned above the water level of the liquid 40, the grip unit 48 is released, and the workpiece unit 19 is transferred to another ultraviolet irradiation device (not shown).

Then, another ultraviolet irradiation device is used to irradiate the dicing film 15 with ultraviolet rays. After that, each wafer 21 is transported to the storage tray using the transport device 54, and the frame 23 is transported to another storage tray (not shown) using another transport device (not shown) or the transport device 54.

Next, the second embodiment will be described. In addition, in the second embodiment, the workpiece 11 is processed without using the dicing film 15 and the ring frame 17. First, the ultrasonic application device 58 used in the second embodiment will be described.

FIG. 8(A) is a diagram showing a state in which ultrasonic waves are applied to the workpiece 11 through the liquid 40. The ultrasonic wave application device 58 has a container 62. A drain 62a is provided on the side of the container 62. A support platform 64 is fixed to the bottom of the inner side of the container 62.

The upper part of the support base 64 is arranged at a height position higher than the position of the liquid discharge port 62a and lower than the position of the upper edge of the container 62. The upper surface of the support table 64 is flat, and functions as a support surface 64a on which the workpiece 11 is placed. The support surface 64a may be provided with a fixing mechanism (not shown) that fixes the workpiece 11 to the support surface 64a.

An ultrasonic horn 60 is provided on the support 64. The ultrasonic horn 60 can move in the X-axis (or Y-axis) direction and the Z-axis direction, for example. An oscillator (not shown) that generates ultrasonic vibration is provided at one end of the ultrasonic horn 60. The ultrasonic wave generated by the oscillator resonates in the ultrasonic horn 60 and is transmitted to the tip portion 60a of the ultrasonic horn 60 located on the side opposite to the one end.

A nozzle 70 for discharging liquid 40 such as water is provided in the vicinity of the ultrasonic horn 60. The nozzle 70 is connected to a liquid supply source (not shown) via a flow path (not shown), and supplies the liquid 40 to the workpiece 11 placed on the support surface 64a.

Next, a method of manufacturing the wafer 21 and the frame body 23 of the second embodiment will be described. First, in the same manner as the shield passage forming step (S10) of the first embodiment, a plurality of shield passages 11 d are formed along the planned dividing line 13 of the workpiece 11. After the shield channel forming step (S10), the workpiece 11 is placed on the support surface 64a with the front surface 11a of the workpiece 11 facing upward.

After that, the liquid 40 is supplied from the nozzle 70 toward the front surface 11a. The liquid 40 is supplied at a flow rate that can sufficiently cover the entire front surface 11a, for example. While supplying the liquid 40 from the nozzle 70 to the front surface 11a, the front end portion 60a of the ultrasonic horn 60 is brought close to the front surface 11a. For example, the front end portion 60a is close to the front surface 11a to the extent that the liquid 40 can be filled between the front end portion 60a and the front surface 11a. However, the front end 60a does not contact the front surface 11a. In addition, the liquid 40 may be supplied in a state where the front end 60a is close to the front surface 11a.

Then, in a state in which the liquid 40 fills the space between the tip portion 60a and the front surface 11a, while applying ultrasonic waves to the workpiece 11, the ultrasonic horn 60 is moved across the entire front surface 11a. Thereby, ultrasonic waves are applied to all the planned dividing lines 13 to break the shield passage 11d (dividing step (S20)).

In the second embodiment, ultrasonic waves are applied while draining the used liquid 40 from the drain port 62a. Therefore, the water level of the liquid 40 supplied from the nozzle 70 to the container 62 does not exceed the height position of the workpiece 11 and the bottom of the tip portion 60a. Therefore, buoyancy and the like will not act on the workpiece 11. Therefore, the distance between the workpiece 11 and the tip portion 60a can be fixed.

After the dividing step (S20), the plurality of wafers 21 and the frame 23 divided from the workpiece 11 are picked up (picking step (S30)). FIG. 8(B) is a diagram showing how the wafer 21 is picked up. In the pickup step (S30), the conveying device 74 or the like arranged above the ultrasonic application device 58 is used.

The structure of the conveying device 74 is the same as that of the conveying device 54. The wrist portion 54a corresponds to the wrist portion 74a, the head portion 54b corresponds to the head portion 74b, and the suction pad 54c corresponds to the suction pad 74c, so repeated description is omitted.

In the pickup step (S30 ), the arm 74 a is moved in the X-axis direction and positioned directly above the workpiece 11. After that, the arm 74a is moved in the Z-axis direction, and after the suction pad 74c is brought into contact with the wafer 21, the suction source is activated to suck the wafer 21 by the suction pad 74c.

Next, the arm portion 74 a is moved in the Z-axis direction to peel the wafer 21 from the dicing adhesive film 15, and then moved in the X-axis direction, and each wafer 21 is transferred to a storage tray (not shown) that contains the wafer 21. Furthermore, the frame 23 is transferred to another storage tray (not shown) by another transfer device (not shown) or the transfer device 74. In addition, the manufacturing method of this embodiment can also be regarded as a method of manufacturing at least any one of the wafer 21 and the frame 23 as described above.

In addition, the structure, method, etc. of the above-mentioned embodiment can be appropriately changed and implemented as long as it does not depart from the purpose of the present invention. For example, in the above-mentioned embodiment, 20 wafers 21 and one frame 23 are manufactured from the workpiece 11, but the number of wafers 21 is not limited to 20. The number of wafers 21 manufactured from the workpiece 11 may be one, or any number of two or more.

2: Laser processing device 4: Abutment 6: Base 8: Wall 10: Chuck table 10a: Keep the face 11: processed objects 11a: front 11b: back 11c: outer peripheral end 11d: Shield channel 11e: fine hole 11f: Metamorphic area 12: Laser beam irradiation unit 12a: Processing head 12b: Camera unit 13: Splitting the planned line 15: cutting film 16: Y axis moving unit 17: Ring frame 18: Y axis guide 19: Unit to be processed 20: Y-axis moving stage 21: chip 22: Y-axis ball screw 23: Frame 24: Y axis pulse motor 26: X axis moving unit 28: X axis guide 30: X axis moving table 32: X axis ball screw 34: X axis pulse motor 36: support table 38: Ultrasonic wave application device 40: liquid 42: container 44: feet 46: Support 48: clamping unit 50: Ultrasonic generating unit 54: Conveying device 54a: wrist 54b: head 54c: Adsorption pad 58: Ultrasonic wave application device 60: Ultrasonic speaker 60a: Front end 62: container 62a: Drain 64: support table 64a: Support surface 70: Nozzle 74: Conveying device 74a: wrist 74b: head 74c: Adsorption pad L: Laser beam

Fig. 1(A) is a perspective view of the workpiece, and Fig. 1(B) is a perspective view of the workpiece unit. Figure 2 is a perspective view of the laser processing device. Fig. 3 is a perspective view showing the steps of forming a shield channel. Fig. 4(A) is a perspective view showing the structure of one shield passage, and Fig. 4(B) is a partial cross-sectional view showing a processed object of a plurality of shield passages formed along a predetermined dividing line. Fig. 5(A) is a partial cross-sectional side view of the ultrasonic application device, Fig. 5(B) is a diagram showing the state of applying ultrasonic waves to the workpiece through a liquid, and Fig. 5(C) is a diagram showing the state of picking up a wafer Figure. Fig. 6(A) is a perspective view of a wafer, and Fig. 6(B) is a perspective view of a frame. FIG. 7 is a flowchart showing the manufacturing method of the wafer and the frame of the first embodiment. FIG. 8(A) is a diagram showing a state in which ultrasonic waves are applied to a workpiece through a liquid, and FIG. 8(B) is a diagram showing a state in which a wafer is picked up.

11: processed objects

11a: front

11d: Shield channel

15: cutting film

17: Ring frame

19: Unit to be processed

21: chip

38: Ultrasonic wave application device

40: liquid

42: container

44: feet

46: Support

48: clamping unit

50: Ultrasonic generating unit

54: Conveying device

54a: wrist

54b: head

54c: Adsorption pad

S20: Segmentation step

S30: Picking step

Claims (3)

A method for manufacturing at least any one of a wafer and a frame, which is to process a plate-shaped workpiece to produce at least one of a wafer of a predetermined shape and a frame after the wafer is divided from the workpiece, the The method is characterized by the following steps: The shield channel forming step is to position the laser beam from the processed object in such a manner that the condensing area of the pulse-shaped laser beam with a wavelength penetrating the processed object is located inside the processed object. The front side of the object is irradiated along the planned dividing line of the processed object, thereby forming a plurality of shield channels each having a pore and a metamorphic area surrounding the pore along the planned dividing line; and The dividing step includes applying ultrasonic waves to the processed object through a liquid after the shield channel forming step, thereby destroying the plurality of shield channels formed along the predetermined dividing line, so as to remove the Divide the wafer. Such as the method of manufacturing at least any one of the chip and the frame of claim 1, wherein: The planned dividing line is set in a region more inside than the outer peripheral end so as not to reach the outer peripheral end of the workpiece, In the step of forming the shield passage, the plurality of shield passages are formed along the predetermined dividing line located on the inner side of the outer peripheral end. Such as the method of manufacturing at least any one of the chip and the frame of claim 1 or 2, wherein, The liquid is water.

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