TWI570979B - 顯示裝置 - Google Patents
顯示裝置 Download PDFInfo
- Publication number
- TWI570979B TWI570979B TW101128521A TW101128521A TWI570979B TW I570979 B TWI570979 B TW I570979B TW 101128521 A TW101128521 A TW 101128521A TW 101128521 A TW101128521 A TW 101128521A TW I570979 B TWI570979 B TW I570979B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- display device
- base film
- laser
- active layer
- Prior art date
Links
- 230000004888 barrier function Effects 0.000 claims description 31
- 229910052732 germanium Inorganic materials 0.000 claims description 22
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 22
- 239000004033 plastic Substances 0.000 claims description 13
- 229920003023 plastic Polymers 0.000 claims description 13
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 9
- WJMXTYZCTXTFJM-UHFFFAOYSA-N 1,1,1,2-tetraethoxydecane Chemical compound C(C)OC(C(OCC)(OCC)OCC)CCCCCCCC WJMXTYZCTXTFJM-UHFFFAOYSA-N 0.000 claims description 4
- 238000005224 laser annealing Methods 0.000 claims description 3
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims description 3
- 239000004642 Polyimide Substances 0.000 claims description 2
- 229920001721 polyimide Polymers 0.000 claims description 2
- BFRGSJVXBIWTCF-UHFFFAOYSA-N niobium monoxide Chemical compound [Nb]=O BFRGSJVXBIWTCF-UHFFFAOYSA-N 0.000 claims 2
- 229910052758 niobium Inorganic materials 0.000 claims 1
- 239000010955 niobium Substances 0.000 claims 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims 1
- 239000010410 layer Substances 0.000 description 146
- 239000010408 film Substances 0.000 description 44
- 239000010409 thin film Substances 0.000 description 18
- 238000000034 method Methods 0.000 description 9
- 238000009413 insulation Methods 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 238000005538 encapsulation Methods 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 238000002425 crystallisation Methods 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 3
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000007715 excimer laser crystallization Methods 0.000 description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000005499 laser crystallization Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 229920001230 polyarylate Polymers 0.000 description 2
- -1 polyethylene Polymers 0.000 description 2
- 239000004695 Polyether sulfone Substances 0.000 description 1
- 239000004697 Polyetherimide Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000007714 electro crystallization reaction Methods 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920006162 poly(etherimide sulfone) Polymers 0.000 description 1
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133305—Flexible substrates, e.g. plastics, organic film
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
- H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
- H01L27/1281—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor by using structural features to control crystal growth, e.g. placement of grain filters
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
- H10K77/111—Flexible substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/311—Flexible OLED
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
- Recrystallisation Techniques (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Thin Film Transistor (AREA)
- Micromachines (AREA)
Description
所述技術一般係有關於一種顯示裝置。更特別地，所述技術係有關於一種使用包含塑膠之基底薄膜之顯示裝置。
近來，輕型及抗碰撞之可撓性平面顯示裝置已藉由利用以例如塑膠之材料而製成之基底薄膜而發展。
不同的可撓性平面顯示裝置可包含例如有機發光二極體顯示元件、液晶顯示元件、以及電泳顯示(EPD)元件以及其他類似物。
此外，可撓性平面顯示裝置可包含薄膜電晶體(TFTs)。低溫多晶矽(low temperature polysilicon,LTPS)薄膜電晶體具有許多優勢，如良好的載子遷移率，其可被應用於高速運算電路及使用在互補式金氧半導體(CMOS)電路，因此在多種類型之薄膜電晶體中，低溫多晶矽薄膜電晶體係被廣泛利用。
低溫多晶矽薄膜電晶體包含係藉由結晶非晶矽層而形成之多晶矽層。結晶非晶矽層的方法，包含如固相結晶法(solid phase crystallization)、準分子雷射結晶法(excimer laser crystallization)、以及利用金屬催化劑之結晶法。準分子雷射結晶法目前被廣泛應用，因其
允許低溫製程，因此基板上受熱效應相對較低，且可製造出具有高於100cm2/Vs之相對較好的載子遷移率之多晶矽層。
然而，當利用雷射在以塑膠製成之基底薄膜上執行結晶製程時，經過多晶矽層之雷射光束係部分地被基底薄膜吸收，因而造成基底薄膜變質。基底薄膜的變質不僅會對於產品可靠性造成負面影響，亦會造成如基底薄膜分離的損壞。
在先前技術所揭示之上述資訊僅為了增加對於所描述技術背景之理解，為此，其可包含不形成該國所屬技術領域具有通常知識者所熟知之先前技術資訊。
所述技術係致力於提供一種可利用雷射在包含例如塑膠材料之基底薄膜上結晶以穩定地形成主動層之顯示裝置。
根據例示性實施例之顯示裝置包括：包含塑膠之基底薄膜；於基底薄膜上之主動層，該主動層包含藉由使用雷射結晶非晶矽層而形成之多晶矽層；介於主動層與基底薄膜之間之阻隔層；以及介於阻隔層與主動層之間之雷射吸收層。
阻隔層可包含複數個無機層。
顯示裝置可更包含介於雷射吸收層與主動層之間之緩衝層。
雷射吸收層可包含非晶矽層。
主動層可透過準分子雷射回火(excimer laser annealing,ELA)而結晶。
基底薄膜可包含含有聚亞醯胺之材料。
阻隔層可包含由氧化矽層與氮化矽層交替堆、疊而成之結構。
緩衝層可包含四乙氧基矽烷(tetra ethyl ortho silicate,TEOS)層、氮化矽層、氧化矽層、以及氮氧化矽層之至少其中之一。
基底薄膜、阻隔層、雷射吸收層、以及主動層可為可撓性的。
根據另一例示性實施例之顯示裝置包含：包含塑膠材料之基底薄膜；於基底薄膜上之主動層，該主動層包括藉由使用雷射結晶非晶矽層而形成之多晶矽層；介於主動層與基底薄膜之間之阻隔層，該阻隔層包含複數個無機層；以及介於兩個複數個無機層之間之雷射吸收層。
顯示裝置可更包含介於阻隔層及主動層之間之緩衝層。
根據本發明之例示性實施例，顯示裝置可具有藉由使用雷射結晶於包含塑膠材料之基底薄膜上以穩定地形成之主動層。
20‧‧‧薄膜電晶體
70‧‧‧有機發光元件
100‧‧‧基底薄膜
101、102‧‧‧顯示裝置
110‧‧‧阻隔層
120‧‧‧緩衝層
132‧‧‧主動層
140‧‧‧閘極絕緣層
160‧‧‧層間絕緣層
190‧‧‧像素定義層
200‧‧‧雷射吸收層
300‧‧‧薄膜封裝層
195‧‧‧開口
710‧‧‧像素電極
720‧‧‧有機發光層
730‧‧‧共用電極
176‧‧‧源極電極
177‧‧‧汲極電極
155‧‧‧閘極電極
180‧‧‧附加絕緣層
123‧‧‧四乙氧基矽烷層
111、113、115、122‧‧‧氧化矽層
112、114、121‧‧‧氮化矽層
第1圖係為根據第一例示性實施例之顯示裝置之剖面圖。
第2圖係為第1圖之部分放大剖面圖。
第3圖係為根據第二例示性實施例之顯示裝置之剖面圖。
第4圖係為第3圖之部分放大剖面圖。
本發明將參閱附圖以更詳細於後文中描述，其中將顯示本發明之例示性實施例。如所屬技術領域具有通常知識者可理解的是，所述實施例可在不脫離本發明之精神與範疇下以各種不同方式修改。
實施例中具有相同或相似構造之元件係以相同的參考符號而表示且於第一例示性實施例中詳細描述。在其後之例示性實施例中，僅將描述與該元件不同之元件。
圖式係為示意而非按比例量測。圖式中之相對尺度與比例會放大或縮減以便於說明，並且該尺度可為隨機並且本發明應不受其限制。此外，將被理解的是當元件被稱為在另一元件“上”時，其可直接地於另一元件上，或可存在一個或多個中介元件於其中。
所述實施例詳盡地描述了理想的例示性實施例。因此，可預期圖式之各種修改。據此，例示性實施例不應限制於所顯示之區域的特定形狀，且可包含例如因製造所造成之形狀的修改或變化。
以下，將參閱第1圖與第2圖而描述根據第一例示性實施例之顯示裝置101。
如第1圖所示，根據第一例示性實施例之顯示裝置101包含基底薄膜100、阻隔層110、雷射吸收層200、薄膜電晶體20、以及有機發光元件70。
薄膜電晶體20包含主動層132、閘極電極155、源極電極176、以及汲極電極177。在第一例示性實施例中，薄膜電晶體20具有頂端閘極結構，其中閘極電極155之係設置於主動層132上。
主動層132包含使用雷射結晶非晶矽層而形成之多晶矽層。使用雷射之結晶方法尤其可為，例如，準分子雷射回火(excimer laser annealing,ELA)法。
此外，顯示裝置101可更包含閘極絕緣層140，其係用以絕緣薄膜電晶體20之主動層132與閘極電極155、以及層間絕緣層160，其係用以絕緣閘極電極155與源極電極176及汲極電極177。
有機發光元件70包含連結薄膜電晶體20之汲極電極177的像素電極710、位於像素電極710上之有機發光層720、以及位於有機發光層720上之共用電極730。在此，像素電極710為正(+)電極，其係為電洞注入電極，且共用電極730為負(-)電極，其係為電子注入電極。然而，第一例示性實施例並不限於此，且舉例而言，根據顯示裝置101之特定驅動方法，像素電極710可為負電極而共用電極730可為正電極。
來自像素電極710之電洞以及來自共用電極730之電子係注入至有機發光層720，且當電洞與電子結合之激子由激發態降至基態時產生發光。
顯示裝置101可更包含像素定義層190，其具有露出像素電極710以定義發光面積之開口195。有機發光層720係置於開口195之像素定義層190中之像素電極710上。
此外，顯示裝置101可更包含附加絕緣層180以隔離像素電極710與源極電極176。附加絕緣層180可具有平面化或平坦之特性，因此可使有機發光層720實質上均勻地設置於像素電極710上。
再者，在根據第一例示性實施例本顯示裝置101中，有機發光元件70以及薄膜電晶體20之結構並未限制如第2圖所示。有機發光元件70以及薄膜電晶體20之結構可由所屬技術領域具有通常知識者以不同方式改變並且簡單修改。
基底薄膜100係由或含塑膠之材料所製成。特別地，基底薄膜100可由具有優良耐熱性、抗化學性、耐久性、以及電絕緣之聚亞醯胺(polyimide)所製成。然而，第一例示性實施例不受限於此，並且基底薄膜100可由如聚對苯二甲酸(polyethylene etherphtalate)、聚萘乙烯(polyethylene naphthalate)、聚碳酸酯(polycarbonate)、多芳基化合物(polyarylate)、聚醚醯亞胺(polyetherimide)、或聚醚(polyethersulfone)製成。
阻隔層110阻擋水氣與氧氣滲入。由塑膠所製成之基底薄膜100相較於由玻璃製造之基板更容易通透水氣與氧氣。為此，阻隔層110位於基底薄膜100上以避免或減少水氣或氧氣通透過至基底薄膜100並對位在基底薄膜100上之有機發光元件70產生負面影響。
如第2圖所示，阻隔層110包含複數個無機層。特別地，阻隔層110具有由氧化矽層111、113、及115和氮化矽層112及114交替堆疊之結構。然而，第一例示性實施例不受限於此，且阻隔層110可含有不同型態之無機層。
雷射吸收層200避免或降低在形成薄膜電晶層20之主動層132之製程中穿過阻隔層110朝向基底薄膜100之部分雷射光束輻射。若雷射光束到達基底薄膜100，雷射光束可被基底薄膜100吸收，使基底薄
膜100變質。因此，雷射吸收層200藉由吸收朝向基底薄膜100移動之雷射光束而避免雷射光束到達基底薄膜100。
在第一例示性實施例中，非晶矽層可用以作為雷射吸收層200。用以作為雷射吸收層200之非晶矽層可於吸收雷射光束時被部分結晶。
緩衝層120置於雷射吸收層200上。緩衝層120包含四乙氧基矽烷(TEOS)層、氮化矽層、氧化矽層、或氮氧化矽層之至少其中之一。第2圖說明三層緩衝層120，其包含氮化矽層121、氧化矽層122、以及四乙氧基矽烷層123。
同時，在顯示裝置101中之緩衝層120在一些實施例中可省略。然而，緩衝層120額外地阻斷通過阻隔層110之水氣或氧氣，並且亦平坦其表面以穩定地形成主動層132。
薄膜電晶體20之主動層132位於緩衝層120上。如上所述，主動層132係藉由圖樣化多晶矽層而形成，該多晶矽層係藉由使用雷射結晶非晶矽層而形成。
此外，如第1圖所示，顯示裝置101可更包含覆蓋有機發光元件70之薄膜封裝層300。薄膜封裝層300可具有複數個無機層之至少其一及複數個有機層之至少其一分層之結構。如基底薄膜100及阻隔層110，薄膜封裝層300避免或降低水氣或氧氣通透進入有機發光元件70以保護有機發光元件70。
此外，在第一例示性實施例中，顯示裝置101不受限於有機發光二極體顯示器。因此。第一例示性實施例可被應用於任何顯示裝
置，其包含使用雷射結晶之多晶矽層之薄膜電晶體。如此的顯示裝置包含如液晶顯示及電泳顯示(EPD)裝置。
以這樣的配置，根據第一例示性實施例之顯示裝置101可使用雷射穩定地形成主動層132於含塑膠之材料之基底薄膜100上。亦即，這可有效的避免或降低由於形成主動層132的過程中之雷射光束所產生之基底薄膜100的變質而導致之基底薄膜100與阻隔層110的分離。
以下，將參閱第3圖與第4圖而描述根據第二例示性實施例之顯示裝置102。
第3圖及第4圖所繪示之顯示裝置102係除了雷射吸收層200之位置以外，大體上相似於第1圖及第2圖之顯示裝置101。如第3圖所示，在根據第二例示性實施例中顯示裝置102中，雷射吸收層200係設置於阻隔層110之中間。
特別地，如第4圖所示，雷射吸收層200係位於阻隔層110之複數個無機層之間。阻隔層110包含交替堆疊之氧化矽層111、113、及115和氮化矽層112及114，且雷射吸收層200可位於氧化矽層111、113、及115和氮化矽層112及114之間至少一空間。
以這樣的配置，根據第二例示性實施例之顯示裝置102亦可使用雷射結晶而穩定地於含塑膠材料之基底薄膜100上形成主動層132。亦即，可有效的避免或降低由於形成主動層132的過程中之雷射光束所產生之基底薄膜100的變質而導致之基底薄膜100與阻隔層110的分離。
當本揭露已針對目前認為實際的例示性實施例而描述，其將被理解的是該發明並不限於所揭露之實施例，相反地其係意欲涵蓋包含於後附申請專利範圍之精神與範疇各種修改與等效配置。
20‧‧‧薄膜電晶體
70‧‧‧有機發光元件
100‧‧‧基底薄膜
101‧‧‧顯示裝置
110‧‧‧阻隔層
120‧‧‧緩衝層
132‧‧‧主動層
140‧‧‧閘極絕緣層
155‧‧‧閘極電極
160‧‧‧層間絕緣層
176‧‧‧源極電極
177‧‧‧汲極電極
180‧‧‧附加絕緣層
190‧‧‧像素定義層
195‧‧‧開口
200‧‧‧雷射吸收層
300‧‧‧薄膜封裝層
710‧‧‧像素電極
720‧‧‧有機發光層
730‧‧‧共用電極
Claims (10)
- 一種顯示裝置，其包含：一基底薄膜，包含塑膠；一主動層，係於該基底薄膜上，該主動層包含藉由使用一雷射結晶一非晶矽層而形成之一多晶矽層；一阻隔層，係介於該主動層與該基底薄膜之間；一緩衝層，係介於該主動層以及該阻隔層之間；以及一雷射吸收層，係介於該阻隔層與該緩衝層之間，且該雷射吸收層藉由該緩衝層與該主動層分離。
- 如申請專利範圍第1項所述之顯示裝置，其中該阻隔層包含複數個無機層。
- 如申請專利範圍第1項所述之顯示裝置，其中該雷射吸收層包含一非晶矽層。
- 如申請專利範圍第3項所述之顯示裝置，其中該主動層係透過準分子雷射退火(ELA)而結晶。
- 如申請專利範圍第3項所述之顯示裝置，其中該基底薄膜包含一含聚亞醯胺之材料。
- 如申請專利範圍第3項所述之顯示裝置，其中該阻隔層包含由多個氧化矽層及多個氮化矽層交替堆疊之一結構。
- 如申請專利範圍第2項所述之顯示裝置，其中該緩衝層包含一四乙氧基矽烷(TEOS)層、一氮化矽層、一氧化矽層或一氮氧化矽層之至少其中之一。
- 如申請專利範圍第3項所述之顯示裝置，其中該基底薄膜、該阻隔層、該雷射吸收層、以及該主動層皆為可撓性的。
- 一種顯示裝置，其包含：一基底薄膜，包含塑膠；一主動層，係於該基底薄膜上，該主動層包含藉由使用一雷射結晶一非晶矽層而形成之一多晶矽層；一阻隔層，係介於該主動層與該基底薄膜之間，該阻隔層包含複數個無機層；以及一雷射吸收層，係介於兩個該複數個無機層之間，且該雷射吸收層藉由該複數個無機層中的至少一層與該主動層分離。
- 如申請專利範圍第9項所述之顯示裝置，更包含介於該阻隔層與該主動層之間之一緩衝層。
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020110079673A KR20130017312A (ko) | 2011-08-10 | 2011-08-10 | 표시 장치 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201308712A TW201308712A (zh) | 2013-02-16 |
| TWI570979B true TWI570979B (zh) | 2017-02-11 |
Family
ID=47040524
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW101128521A TWI570979B (zh) | 2011-08-10 | 2012-08-07 | 顯示裝置 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20130037804A1 (zh) |
| EP (1) | EP2557596B1 (zh) |
| KR (1) | KR20130017312A (zh) |
| CN (1) | CN102931207B (zh) |
| TW (1) | TWI570979B (zh) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9991399B2 (en) | 2012-10-04 | 2018-06-05 | Cree, Inc. | Passivation structure for semiconductor devices |
| US8994073B2 (en) | 2012-10-04 | 2015-03-31 | Cree, Inc. | Hydrogen mitigation schemes in the passivation of advanced devices |
| US9812338B2 (en) * | 2013-03-14 | 2017-11-07 | Cree, Inc. | Encapsulation of advanced devices using novel PECVD and ALD schemes |
| CN104142594B (zh) * | 2013-05-10 | 2017-06-06 | 群创光电股份有限公司 | 薄膜晶体管基板及显示装置 |
| KR102104608B1 (ko) * | 2013-05-16 | 2020-04-27 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치, 이를 포함하는 전자 기기, 및 유기 발광 표시 장치의 제조 방법 |
| KR102074431B1 (ko) | 2013-07-19 | 2020-03-03 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 이의 제조방법, 이를 이용한 유기 발광 표시 장치 |
| CN103500756A (zh) | 2013-10-22 | 2014-01-08 | 深圳市华星光电技术有限公司 | 有机电致发光器件及其制作方法 |
| CN105373282A (zh) | 2015-12-04 | 2016-03-02 | 上海天马微电子有限公司 | 一种显示面板及显示装置 |
| CN106252214A (zh) * | 2016-08-31 | 2016-12-21 | 武汉华星光电技术有限公司 | 一种制备柔性显示器件的离子活化方法 |
| US20190067338A1 (en) * | 2017-08-28 | 2019-02-28 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Amoled Substrate and Method for Manufacturing Same |
| CN107622973A (zh) * | 2017-08-28 | 2018-01-23 | 武汉华星光电半导体显示技术有限公司 | Amoled基板的制作方法及amoled基板 |
| CN107681060A (zh) * | 2017-09-19 | 2018-02-09 | 武汉华星光电半导体显示技术有限公司 | 一种柔性基板及柔性oled器件 |
| KR102504565B1 (ko) | 2018-03-08 | 2023-03-02 | 삼성디스플레이 주식회사 | 표시 장치 |
| US11925078B2 (en) | 2018-09-21 | 2024-03-05 | Sharp Kabushiki Kaisha | Display device including frame region, and bending region around display region |
| CN109599427B (zh) * | 2018-12-14 | 2021-05-14 | 京东方科技集团股份有限公司 | 显示基板的制备方法、显示面板及显示装置 |
| CN115312561A (zh) | 2019-12-24 | 2022-11-08 | 群创光电股份有限公司 | 电子装置 |
| CN111769139A (zh) * | 2020-06-23 | 2020-10-13 | 武汉华星光电半导体显示技术有限公司 | 一种显示面板及其制备方法、显示装置 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW522439B (en) * | 1999-12-20 | 2003-03-01 | Semiconductor Energy Lab | Semiconductor device and method of manufacturing the same |
| TW569290B (en) * | 2001-07-25 | 2004-01-01 | Seiko Epson Corp | Manufacturing method for semiconductor film, manufacturing method for semiconductor device, semiconductor device, integrated circuit, electrooptical device, and electronic machine |
| US20090032096A1 (en) * | 2007-07-30 | 2009-02-05 | Fujifilm Corporation | Process for producing thin-film device, and devices produced by the process |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6436739B1 (en) * | 2000-04-27 | 2002-08-20 | The Regents Of The University Of California | Thick adherent dielectric films on plastic substrates and method for depositing same |
| KR100679917B1 (ko) * | 2000-09-09 | 2007-02-07 | 엘지.필립스 엘시디 주식회사 | 박막 트랜지스터 및 그 제조방법 |
| US6639246B2 (en) * | 2001-07-27 | 2003-10-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US20030108749A1 (en) * | 2001-12-06 | 2003-06-12 | Sunder Ram | Plastic substrates with polysiloxane coating for TFT fabrication |
| JP4387091B2 (ja) * | 2002-11-05 | 2009-12-16 | 株式会社半導体エネルギー研究所 | 薄膜トランジスタの作製方法 |
| JP5433154B2 (ja) * | 2007-02-23 | 2014-03-05 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP5245287B2 (ja) * | 2007-05-18 | 2013-07-24 | ソニー株式会社 | 半導体装置の製造方法、薄膜トランジスタ基板の製造方法および表示装置の製造方法 |
| TW201001624A (en) * | 2008-01-24 | 2010-01-01 | Soligie Inc | Silicon thin film transistors, systems, and methods of making same |
| KR101049805B1 (ko) * | 2008-12-30 | 2011-07-15 | 삼성모바일디스플레이주식회사 | 다결정 실리콘의 제조방법, 박막트랜지스터, 그의 제조방법및 이를 포함하는 유기전계발광표시장치 |
-
2011
- 2011-08-10 KR KR1020110079673A patent/KR20130017312A/ko active Search and Examination
- 2011-12-20 CN CN201110443438.3A patent/CN102931207B/zh active Active
-
2012
- 2012-03-23 US US13/429,259 patent/US20130037804A1/en not_active Abandoned
- 2012-07-30 EP EP12178549.7A patent/EP2557596B1/en active Active
- 2012-08-07 TW TW101128521A patent/TWI570979B/zh active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW522439B (en) * | 1999-12-20 | 2003-03-01 | Semiconductor Energy Lab | Semiconductor device and method of manufacturing the same |
| TW569290B (en) * | 2001-07-25 | 2004-01-01 | Seiko Epson Corp | Manufacturing method for semiconductor film, manufacturing method for semiconductor device, semiconductor device, integrated circuit, electrooptical device, and electronic machine |
| US20090032096A1 (en) * | 2007-07-30 | 2009-02-05 | Fujifilm Corporation | Process for producing thin-film device, and devices produced by the process |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102931207B (zh) | 2018-05-01 |
| US20130037804A1 (en) | 2013-02-14 |
| KR20130017312A (ko) | 2013-02-20 |
| EP2557596B1 (en) | 2017-09-06 |
| EP2557596A3 (en) | 2013-09-04 |
| EP2557596A2 (en) | 2013-02-13 |
| TW201308712A (zh) | 2013-02-16 |
| CN102931207A (zh) | 2013-02-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI570979B (zh) | 顯示裝置 | |
| US8288768B2 (en) | Thin film transistor, method of manufacturing the same, and flat panel display device having the same | |
| US9257668B2 (en) | Organic light-emitting diode (OLED) display and method for manufacturing the same | |
| US9355877B2 (en) | Carrier substrate, method of manufacturing the same, and method of manufacturing flexible display device using the carrier substrate | |
| US20070205719A1 (en) | Electroluminescent display device and method of manufacturing the same | |
| TWI553847B (zh) | 有機發光顯示裝置及其製造方法 | |
| TW201721721A (zh) | 陣列基板、顯示裝置及陣列基板的製備方法 | |
| US9806285B2 (en) | Organic light-emitting diode display and manufacturing method thereof | |
| KR102276118B1 (ko) | 박막 트랜지스터 및 이를 포함하는 유기 발광 표시 장치 | |
| KR101439261B1 (ko) | 플렉서블 디스플레이장치 및 그 제조방법 | |
| KR102216672B1 (ko) | 유기 발광 표시 장치 및 그 제조 방법 | |
| US9735390B2 (en) | Organic light-emitting display apparatus and method of manufacturing the same | |
| KR102304726B1 (ko) | 디스플레이 장치의 제조 방법 및 이를 통해 제조된 디스플레이 장치 | |
| KR101064442B1 (ko) | 유기전계 발광 표시장치 | |
| US9425214B2 (en) | Thin film transistor substrate, method of manufacturing the same, and organic light emitting diode display using the same | |
| KR102100374B1 (ko) | 유기 발광 표시 장치 및 그 제조 방법 | |
| CN106960836B (zh) | 显示设备及其制造方法 | |
| KR102002959B1 (ko) | 표시 장치의 제조 방법 | |
| US10734526B2 (en) | Display device and method of manufacturing the same | |
| KR101763414B1 (ko) | 박막 트랜지스터 및 그것을 구비한 평판 표시 장치 | |
| US9349978B2 (en) | Organic light emitting display device and method of manufacturing the same | |
| KR20210019475A (ko) | 유기 발광 표시 장치 | |
| KR100749421B1 (ko) | 박막 트랜지스터 및 이를 구비한 표시 장치 |