CN102931207A - 显示装置 - Google Patents

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CN102931207A
CN102931207A CN2011104434383A CN201110443438A CN102931207A CN 102931207 A CN102931207 A CN 102931207A CN 2011104434383 A CN2011104434383 A CN 2011104434383A CN 201110443438 A CN201110443438 A CN 201110443438A CN 102931207 A CN102931207 A CN 102931207A
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film
display unit
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basilar memebrane
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CN102931207B (zh
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李在燮
郑仓龙
朴容焕
权暻美
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Samsung Display Co Ltd
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Abstract

根据本发明的实施例的显示装置包括：由塑料材质形成的基底膜；形成于所述基底膜上，由采用激光将非晶硅膜结晶化而成的多晶硅膜所形成的活性层；形成于所述活性层和所述基底膜之间的阻挡层；以及设置于所述阻挡层和所述活性层之间的激光吸收层。

Description

显示装置
技术领域
本发明的实施例涉及显示装置，尤其涉及使用以塑料材质形成的基底膜的显示装置。
背景技术
近来，有效地利用不仅重量轻、抗冲击能力强，而且由如塑料等材质形成的基底膜(base film)而开发出了柔韧(flexible)的平板型显示装置。
柔韧的平板型显示装置包括：有机发光显示器件(organic lightemitting diode display)、液晶显示器件(liquid crystal display)以及电泳显示器(electrophoretic display，简称为EPD)等。
另外，柔韧的平板型显示装置包括薄膜晶体管(thin filmtransistor)。在多种薄膜晶体管中，尤其是低温多晶硅薄膜晶体管(LTPSTFT)具有优异的电子迁移率(carrier mobility)而可以适用于高速运行电路中并且还可以构成CMOS电路，从而得到了广泛的应用。
低温多晶硅薄膜晶体管包括把非晶硅膜结晶化而形成的多晶硅膜。结晶化非晶硅膜的方法有固相结晶化法(solid phasecrystallization)、准分子激光再结晶法(excimer laser crystallization)以及使用金属催化剂的结晶化方法等。其中，由于使用激光的结晶化方法可以实施低温工序从而给基板带来的热影响相对较小，并且可以形成具有100cm2/Vs以上的相对高的电子迁移率的多晶硅膜，即具有优异特性的多晶硅膜，因此得到了广泛的应用。
然而，在由塑料材质形成的基底膜上使用激光来实施结晶化工序时，一部分透射多晶硅膜的激光被基底膜吸收，从而会导致基底膜发生劣化。这种基底膜的劣化不仅对产品的稳定性带来负面影响，而且引起基底膜被剥离的不良现象。
发明内容
本发明的实施例提供能够在塑料材质的基底膜上稳定地形成采用激光结晶化的活性层的显示装置。
根据本发明的实施例，显示装置包括：由塑料材质形成的基底膜；形成于所述基底膜上，由多晶硅膜所形成的活性层，所述多晶硅膜用激光将非晶硅膜结晶化而形成；形成于所述活性层和所述基底膜之间的阻挡层；以及设置于所述阻挡层和所述活性层之间的激光吸收层。
所述阻挡层可以包括多个无机膜。
所述显示装置还可以包括设置于所述激光吸收层和所述活性层之间的缓冲层。
根据本发明另一实施例，显示装置可以包括：由塑料材质形成的基底膜；形成于所述基底膜上，由多晶硅膜所形成的活性层，所述多晶硅膜所用激光将非晶硅膜结晶化而形成；形成于所述活性层和所述基底膜之间，并且包括多个无机膜的阻挡层；以及设置于所述阻挡层的所述多个无机膜之间的激光吸收层。
所述显示装置还可以包括设置于所述阻挡层和所述活性层之间的缓冲层。
在所述显示装置中，所述激光吸收层可以包括非晶硅膜。
所述活性层可以通过准分子激光退火(Excimer Laser Annealing，简称为ELA)而得以结晶化。
所述基底膜可以由包含聚酰亚胺(polyimide)的材质形成。
所述阻挡层可以是由氧化硅膜和氮化硅膜交替地层叠的结构。
所述缓冲层可以包括四乙基邻硅酸盐(tetra ethyl ortho silicate，简称为TEOS)膜、氮化硅膜、氧化硅膜以及氮氧化硅膜中的一种以上。
所述基底膜、所述阻挡层、所述激光吸收层以及所述活性层可以被形成为柔韧的(flexible)。
根据本发明的实施例，能够在显示装置的、塑料材质的基底膜上稳定地形成采用激光结晶化的活性层。
附图说明
图1为图示根据本发明第一实施例的显示装置的截面图；
图2为放大图示图1的一部分的截面图；
图3为图示根据本发明第二实施例的显示装置的截面图；
图4为放大图示图3的一部分的截面图。
附图标记说明
20：薄膜晶体管； 70：有机发光器件；
100：基底膜；    101、102：显示装置；
110：阻挡层；    120：缓冲层；
132：活性层；    140：栅绝缘膜；
160：层间绝缘膜；190：像素限定膜；
200：激光吸收层；300：薄膜封装层。
具体实施方式
下面，参考附图，对本发明的实施例进行详细的说明，使得所属技术领域的技术人员能够轻易地实施。本发明能够以多种不同的方式实施，并不限于在本说明书中说明的实施例。
另外，在多个实施例中，对于具有相同的构成的组成要素使用了相同的附图标记并且代表性地在第一实施例中进行说明，其余的实施例中仅对于与第一实施例不同的构成进行了说明。
需要声明的是，较简要地，并且未按照相同比例图示了附图。为了附图中的明确性以及便于说明而放大或者缩小显示了附图中的相对尺寸和比例，任意的尺寸仅是示例性的，而不是用于限定本发明。并且，为了显示类似的特征，对于在两个以上的附图中所示的相同的结构、组成要素或者部件使用了相同的附图标记。某一部分在另一部分“之上”表示某一部分可以紧挨于另一部分上，还可以表示其之间存在其他的部分。
本发明的实施例具体示出了本发明的理想实施例。其结果，预计会有对图的理解的多种变形。从而，实施例并不限于所示区域的特定形态，例如还包括因制造所引起的形态的变形。
下面，参考图1以及图2，对根据本发明第一实施例的显示装置101进行说明。
如图1所示，根据本发明第一实施例的显示装置101包括：基底膜100、阻挡层110、激光吸收层200、薄膜晶体管20以及有机发光器件70。
薄膜晶体管20包括：活性层132、栅电极155、源电极176以及漏电极177。在本发明的第一实施例中，薄膜晶体管20具有栅电极155形成于活性层132上的顶栅(top gate)结构。
活性层132由多晶硅膜形成，所述多晶硅膜用激光将非晶硅膜结晶化而形成。具体而言，用激光的结晶化方法可以为准分子激光退火法(Excimer Laser Annealing，简称为ELA)。
另外，显示装置101还可以包括：使薄膜晶体管20的活性层132和栅电极155绝缘的栅绝缘膜140；以及使栅电极155和源电极176、漏电极177绝缘的层间绝缘膜160。
有机发光器件70包括：与薄膜晶体管20的漏电极177连接的像素电极710；形成于像素电极710上的有机发光层720；以及形成于有机发光层720上的公共电极730。其中，像素电极710为空穴注入电极，即阳极(+)；公共电极730为电子注入电极，即阴极(-)。然而，本发明的第一实施例并不限于此，根据显示装置101的驱动方法，还可以是像素电极710成为阴极、公共电极730成为阳极。
从像素电极710和公共电极730分别向有机发光层720的内部注入空穴和电子，则注入的空穴和电子所结合的激子(exiton)从激发态跃迁至基态，从而有机发光层720发光。
另外，显示装置101还可以包括具有使像素电极710露出开口部195的、限定发光区域的像素限定膜190。在像素限定膜190的开口部195内，有机发光层720形成于紧挨像素电极710的上面。
另外，显示装置101还可以包括使像素电极710和源电极176绝缘的额外的绝缘膜180。额外的绝缘膜180具有平坦化特性，从而有机发光层720可以在像素电极710上得以均匀地形成。
另外，在根据本发明第一实施例的显示装置101中，有机发光器件70和薄膜晶体管20的具体结构并不限于图1所示的结构。在所属技术领域的技术人员能够实施简单的变形的范围内，有机发光器件70和薄膜晶体管20可以以多种结构形成。
基底膜100由塑料材质形成。具体而言，基底膜100可以由具有如优异的耐热性、耐化学性、耐久性以及电绝缘性等特性的聚酰亚胺(polyimide)材质形成。然而，本发明的第一实施例并不限于此，基底膜100还可以由如聚对苯二甲酸乙二醇酯、聚萘二甲酸乙二醇酯、聚碳酸脂、聚烯丙基化物、聚醚酰亚胺以及聚醚砜等材质形成。
阻挡层110防止水分或者氧的渗透。以塑料材质形成的基底膜100与由玻璃(glass)材质形成的基板相比，相对更容易发生水分或者氧的渗透。对此，通过在基底膜100上形成阻挡层110，从而抑制渗透基底膜100的水分或者氧对形成于基底膜100上的有机发光器件70产生负面影响。
如图2所示，阻挡层110包括多个无机膜、即无机膜111、无机膜112、无机膜113、无机膜114、无机膜115。具体而言，阻挡层110具有氧化硅膜111、氧化硅膜113、氧化硅膜115和氮化硅膜112、氮化硅膜114交替地层叠的结构。然而，本发明的第一实施例并不限于此，阻挡层110还可以包括其他种类的无机膜。
激光吸收层200防止在形成薄膜晶体管20的活性层132的过程中所照射的激光的一部分经由阻挡层110而向基底膜100传播的现象。到达基底膜100的激光被基底膜100吸收则会使基底膜100发生劣化。即，激光吸收层200预先吸收向基底膜100传播的激光以防止激光到达基底膜100。
在本发明的第一实施例中，可以将非晶硅膜用作激光吸收层200。即，用作激光吸收层200的非晶硅膜在吸收激光时其至少一部分可以得到结晶化。
缓冲层120形成于激光吸收层200上。缓冲层120包括四乙基邻硅酸盐(tetra ethyl ortho silicate，简称为TEOS)膜、氮化硅膜、氧化硅膜以及氮氧化硅膜中的一种以上。图2图示了以层叠有氮化硅膜121、氧化硅膜122以及四乙基邻硅酸盐(TEOS)膜123的三重膜所形成的缓冲层120。
另外，在根据本发明第一实施例的显示装置101中，还可以省略缓冲层120。然而，缓冲层120起到将通过阻挡膜110的水分或者氧进一步阻断，并且平坦化表面以便稳定地形成活性层132的作用。
缓冲层120上形成有薄膜晶体管20的活性层132。如上所述，活性层132通过如下的方法得以形成：首先采用激光把非晶硅膜结晶化以形成多晶硅膜，再图案化所述多晶硅膜以形成活性层132。
并且，如图1所示，显示装置101还可以包括覆盖有机发光器件70的薄膜封装层300。薄膜封装层300可以由层叠有多个无机膜和多个有机膜中的一种以上膜的结构形成。薄膜封装层300保护有机发光器件70，并且与基底膜100和阻挡层110相同，抑制水分或者氧向有机发光器件70渗透。
并且，在本发明的第一实施例中，显示装置101并不限于有机发光显示(organic light emitting diode display)。从而，本发明的第一实施例可以适用于如液晶显示(liquid crystal display)装置以及电泳显示(electrophoretic display，简称为EPD)装置等可以包括使用通过激光结晶化的多晶硅膜的薄膜晶体管的所有显示装置。
依据这种构成，根据本发明第一实施例的显示装置101采用激光在塑料材质的基底膜100上可以稳定地形成被结晶化的活性层132。即，在形成活性层132的过程中可以有效地防止基底膜100因激光发生劣化从而阻挡层110剥离的现象。
下面，参考图3以及图4，对根据本发明第二实施例的显示装置102进行说明。
如图3所示，根据本发明第二实施例的显示装置102中，激光吸收层200设置于阻挡层110的中间。
具体而言，如图4所示，激光吸收层200设置于阻挡层110的多个无机膜之间，即无机膜111、无机膜112、无机膜113、无机膜114、无机膜115之间。阻挡层110包括交替地层叠的氧化硅膜111、氧化硅膜113、氧化硅膜115和氮化硅膜112、氮化硅膜114，激光吸收层200可以设置于这些氧化硅膜111、氧化硅膜113、氧化硅膜115和氮化硅膜112、氮化硅膜114之间的一个以上的某位置。
依据这种构成，根据本发明第二实施例的显示装置102采用激光在塑料材质的基底膜100上可以稳定地形成被结晶化的活性层132。即，在形成活性层132的过程中可以有效地防止基底膜100因激光发生劣化从而阻挡层110剥离的现象。
根据前述的说明，通过优选实施例对本发明进行了说明，但是本发明并不限于此，所属技术领域的技术人员能够明白，在不脱离权利要求的概念和范围的前提下，本发明可以有多种修改以及变形。

Claims (11)

1.一种显示装置，包括：
基底膜，由塑料材质形成；
活性层，形成于所述基底膜上，由多晶硅膜所形成，所述多晶硅膜用激光将非晶硅膜结晶化而形成；
阻挡层，形成于所述活性层和所述基底膜之间；以及
激光吸收层，设置于所述阻挡层和所述活性层之间。
2.根据权利要求1所述的显示装置，其特征在于：
所述阻挡层包括多个无机膜。
3.根据权利要求1所述的显示装置，还包括：
缓冲层，设置于所述激光吸收层和所述活性层之间。
4.一种显示装置，包括：
基底膜，由塑料材质形成；
活性层，形成于所述基底膜上，由多晶硅膜所形成，所述多晶硅膜所用激光将非晶硅膜结晶化而形成；
阻挡层，形成于所述活性层和所述基底膜之间，并且包括多个无机膜；以及
激光吸收层，设置于所述阻挡层的所述多个无机膜之间。
5.根据权利要求4所述的显示装置，还包括：
缓冲层，设置于所述阻挡层和所述活性层之间。
6.根据权利要求1至5任意一项权利要求所述的显示装置，其特征在于：
所述激光吸收层包括非晶硅膜。
7.根据权利要求6所述的显示装置，其特征在于：
所述活性层通过准分子激光退火而得以结晶化。
8.根据权利要求6所述的显示装置，其特征在于：
所述基底膜由包含聚酰亚胺的材质形成。
9.根据权利要求6所述的显示装置，其特征在于：
所述阻挡层是由氧化硅膜和氮化硅膜交替地层叠的结构。
10.根据权利要求6所述的显示装置，其特征在于：
所述缓冲层包括四乙基邻硅酸盐膜、氮化硅膜、氧化硅膜以及氮氧化硅膜中的一种以上。
11.根据权利要求6所述的显示装置，其特征在于：
所述基底膜、所述阻挡层、所述激光吸收层以及所述活性层被形成为柔韧的。
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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103500756A (zh) * 2013-10-22 2014-01-08 深圳市华星光电技术有限公司 有机电致发光器件及其制作方法
CN104142594A (zh) * 2013-05-10 2014-11-12 群创光电股份有限公司 薄膜晶体管基板及显示装置
CN104167424A (zh) * 2013-05-16 2014-11-26 三星显示有限公司 有机发光二极管显示器、包括其的电子装置及其制造方法
CN106252214A (zh) * 2016-08-31 2016-12-21 武汉华星光电技术有限公司 一种制备柔性显示器件的离子活化方法
CN107622973A (zh) * 2017-08-28 2018-01-23 武汉华星光电半导体显示技术有限公司 Amoled基板的制作方法及amoled基板
CN107681060A (zh) * 2017-09-19 2018-02-09 武汉华星光电半导体显示技术有限公司 一种柔性基板及柔性oled器件
CN109599427A (zh) * 2018-12-14 2019-04-09 京东方科技集团股份有限公司 显示基板的制备方法、显示面板及显示装置

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9991399B2 (en) 2012-10-04 2018-06-05 Cree, Inc. Passivation structure for semiconductor devices
US8994073B2 (en) 2012-10-04 2015-03-31 Cree, Inc. Hydrogen mitigation schemes in the passivation of advanced devices
US9812338B2 (en) * 2013-03-14 2017-11-07 Cree, Inc. Encapsulation of advanced devices using novel PECVD and ALD schemes
KR102074431B1 (ko) 2013-07-19 2020-03-03 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 이의 제조방법, 이를 이용한 유기 발광 표시 장치
CN105373282A (zh) 2015-12-04 2016-03-02 上海天马微电子有限公司 一种显示面板及显示装置
US20190067338A1 (en) * 2017-08-28 2019-02-28 Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Amoled Substrate and Method for Manufacturing Same
KR102504565B1 (ko) 2018-03-08 2023-03-02 삼성디스플레이 주식회사 표시 장치
US11925078B2 (en) 2018-09-21 2024-03-05 Sharp Kabushiki Kaisha Display device including frame region, and bending region around display region
CN115312561A (zh) 2019-12-24 2022-11-08 群创光电股份有限公司 电子装置
CN111769139A (zh) * 2020-06-23 2020-10-13 武汉华星光电半导体显示技术有限公司 一种显示面板及其制备方法、显示装置

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010004121A1 (en) * 1999-12-20 2001-06-21 Mitsunori Sakama Semiconductor device and method of manufacturing the same
WO2001083847A2 (en) * 2000-04-27 2001-11-08 The Regents Of The University Of California Method of making dielectric films
US20020113236A1 (en) * 2000-09-09 2002-08-22 Lg Philips Lcd Co., Ltd. Thin film transistor and fabrication method thereof
US20030020065A1 (en) * 2001-07-27 2003-01-30 Semiconductor Energy Semiconductor device
US20030034523A1 (en) * 2001-07-25 2003-02-20 Seiko Epson Corporation Semiconductor thin-film manufacturing method, semiconductor device manufacturing method, semiconductor device, integrated circuit, electro-optical device, and electronic appliance
US20030108749A1 (en) * 2001-12-06 2003-06-12 Sunder Ram Plastic substrates with polysiloxane coating for TFT fabrication
US20050003594A1 (en) * 2002-11-05 2005-01-06 Semiconductor Energy Laboratory Co., Ltd. Laser doping processing method and method for manufacturing semiconductor device
US20080206967A1 (en) * 2007-02-23 2008-08-28 Semiconductor Energy Laboratory Co., Ltd. Method for forming semiconductor device
US20090032096A1 (en) * 2007-07-30 2009-02-05 Fujifilm Corporation Process for producing thin-film device, and devices produced by the process
WO2009094639A1 (en) * 2008-01-24 2009-07-30 Soligie, Inc. Silicon thin film transistors, systems, and methods of making same
CN101771087A (zh) * 2008-12-30 2010-07-07 三星移动显示器株式会社 薄膜晶体管、其制备方法及有机发光二极管显示设备

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5245287B2 (ja) * 2007-05-18 2013-07-24 ソニー株式会社 半導体装置の製造方法、薄膜トランジスタ基板の製造方法および表示装置の製造方法

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010004121A1 (en) * 1999-12-20 2001-06-21 Mitsunori Sakama Semiconductor device and method of manufacturing the same
WO2001083847A2 (en) * 2000-04-27 2001-11-08 The Regents Of The University Of California Method of making dielectric films
US20020113236A1 (en) * 2000-09-09 2002-08-22 Lg Philips Lcd Co., Ltd. Thin film transistor and fabrication method thereof
CN1465093A (zh) * 2001-07-25 2003-12-31 精工爱普生株式会社 半导体薄膜及半导体装置的制造方法、半导体装置、集成电路、电光学装置及电子机器
US20030034523A1 (en) * 2001-07-25 2003-02-20 Seiko Epson Corporation Semiconductor thin-film manufacturing method, semiconductor device manufacturing method, semiconductor device, integrated circuit, electro-optical device, and electronic appliance
US20030020065A1 (en) * 2001-07-27 2003-01-30 Semiconductor Energy Semiconductor device
US20030108749A1 (en) * 2001-12-06 2003-06-12 Sunder Ram Plastic substrates with polysiloxane coating for TFT fabrication
US20050003594A1 (en) * 2002-11-05 2005-01-06 Semiconductor Energy Laboratory Co., Ltd. Laser doping processing method and method for manufacturing semiconductor device
US20080206967A1 (en) * 2007-02-23 2008-08-28 Semiconductor Energy Laboratory Co., Ltd. Method for forming semiconductor device
US7638378B2 (en) * 2007-02-23 2009-12-29 Semiconductor Energy Laboratory Co., Ltd. Method for forming semiconductor device
US20090032096A1 (en) * 2007-07-30 2009-02-05 Fujifilm Corporation Process for producing thin-film device, and devices produced by the process
WO2009094639A1 (en) * 2008-01-24 2009-07-30 Soligie, Inc. Silicon thin film transistors, systems, and methods of making same
CN101771087A (zh) * 2008-12-30 2010-07-07 三星移动显示器株式会社 薄膜晶体管、其制备方法及有机发光二极管显示设备

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104142594A (zh) * 2013-05-10 2014-11-12 群创光电股份有限公司 薄膜晶体管基板及显示装置
CN104167424A (zh) * 2013-05-16 2014-11-26 三星显示有限公司 有机发光二极管显示器、包括其的电子装置及其制造方法
CN103500756A (zh) * 2013-10-22 2014-01-08 深圳市华星光电技术有限公司 有机电致发光器件及其制作方法
WO2015058459A1 (zh) * 2013-10-22 2015-04-30 深圳市华星光电技术有限公司 有机电致发光器件及其制作方法
US9165990B1 (en) 2013-10-22 2015-10-20 Shenzhen China Star Optoelectronics Technology Co., Ltd Organic electroluminescence device and manufacturing method thereof
CN106252214A (zh) * 2016-08-31 2016-12-21 武汉华星光电技术有限公司 一种制备柔性显示器件的离子活化方法
CN107622973A (zh) * 2017-08-28 2018-01-23 武汉华星光电半导体显示技术有限公司 Amoled基板的制作方法及amoled基板
WO2019041554A1 (zh) * 2017-08-28 2019-03-07 武汉华星光电半导体显示技术有限公司 Amoled基板的制作方法及amoled基板
CN107681060A (zh) * 2017-09-19 2018-02-09 武汉华星光电半导体显示技术有限公司 一种柔性基板及柔性oled器件
CN109599427A (zh) * 2018-12-14 2019-04-09 京东方科技集团股份有限公司 显示基板的制备方法、显示面板及显示装置
US10991918B2 (en) 2018-12-14 2021-04-27 Boe Technology Group Co., Ltd. Method for preparing display panel, display panel and display device
CN109599427B (zh) * 2018-12-14 2021-05-14 京东方科技集团股份有限公司 显示基板的制备方法、显示面板及显示装置
US11508949B2 (en) 2018-12-14 2022-11-22 Beijing Boe Technology Development Co., Ltd. Display panel and display device

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