TWI570762B - 離子照射裝置、離子照射方法 - Google Patents

離子照射裝置、離子照射方法 Download PDF

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Publication number
TWI570762B
TWI570762B TW104107230A TW104107230A TWI570762B TW I570762 B TWI570762 B TW I570762B TW 104107230 A TW104107230 A TW 104107230A TW 104107230 A TW104107230 A TW 104107230A TW I570762 B TWI570762 B TW I570762B
Authority
TW
Taiwan
Prior art keywords
pole
magnet
ion
orbit
rotation
Prior art date
Application number
TW104107230A
Other languages
English (en)
Chinese (zh)
Other versions
TW201546863A (zh
Inventor
湯瀬□巳
寺澤寿浩
Original Assignee
愛發科股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 愛發科股份有限公司 filed Critical 愛發科股份有限公司
Publication of TW201546863A publication Critical patent/TW201546863A/zh
Application granted granted Critical
Publication of TWI570762B publication Critical patent/TWI570762B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/09—Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H01J37/1472—Deflecting along given lines
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H7/00—Details of devices of the types covered by groups H05H9/00, H05H11/00, H05H13/00
    • H05H7/04—Magnet systems, e.g. undulators, wigglers; Energisation thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/0203—Protection arrangements
    • H01J2237/0213—Avoiding deleterious effects due to interactions between particles and tube elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/028—Particle traps
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/02—Arrangements for confining plasma by electric or magnetic fields; Arrangements for heating plasma
    • H05H1/16—Arrangements for confining plasma by electric or magnetic fields; Arrangements for heating plasma using externally-applied electric and magnetic fields

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Particle Accelerators (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electron Sources, Ion Sources (AREA)
TW104107230A 2014-03-12 2015-03-06 離子照射裝置、離子照射方法 TWI570762B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014048714 2014-03-12

Publications (2)

Publication Number Publication Date
TW201546863A TW201546863A (zh) 2015-12-16
TWI570762B true TWI570762B (zh) 2017-02-11

Family

ID=54071598

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104107230A TWI570762B (zh) 2014-03-12 2015-03-06 離子照射裝置、離子照射方法

Country Status (6)

Country Link
US (1) US20160013011A1 (fr)
JP (1) JP5877936B1 (fr)
KR (1) KR101645503B1 (fr)
CN (1) CN105103264B (fr)
TW (1) TWI570762B (fr)
WO (1) WO2015137150A1 (fr)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0437000A (ja) * 1990-06-01 1992-02-06 Japan Atom Energy Res Inst 静電加速器
JP2004221016A (ja) * 2003-01-17 2004-08-05 Hitachi High-Technologies Corp イオン注入装置、イオン注入装置におけるｘ線を遮蔽する方法。
TW200826142A (en) * 2006-10-11 2008-06-16 Nissin Ion Equipment Co Ltd Ion implanter
TW200832485A (en) * 2006-11-08 2008-08-01 Silicon Genesis Corp Apparatus and method for introducing particles using a radio frequency quadrupole linear accelerator for semiconductor materials
CN102598195A (zh) * 2009-09-18 2012-07-18 Fei公司 分布式离子源加速镜筒

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4047068A (en) * 1973-11-26 1977-09-06 Kreidl Chemico Physical K.G. Synchronous plasma packet accelerator
US4010396A (en) * 1973-11-26 1977-03-01 Kreidl Chemico Physical K.G. Direct acting plasma accelerator
US4560879A (en) * 1983-09-16 1985-12-24 Rca Corporation Method and apparatus for implantation of doubly-charged ions
JP3011421B2 (ja) 1989-10-02 2000-02-21 株式会社東芝 音声認識装置
JPH03118600U (fr) * 1990-03-19 1991-12-06
JP3159786B2 (ja) 1992-06-23 2001-04-23 日本真空技術株式会社 イオン加速装置
JPH0660836A (ja) * 1992-08-05 1994-03-04 Ulvac Japan Ltd イオン加速装置
CN2788347Y (zh) * 2005-04-22 2006-06-14 北京中科信电子装备有限公司 防x射线静电离子加速管
JP5963662B2 (ja) * 2012-12-04 2016-08-03 住友重機械イオンテクノロジー株式会社 イオン注入装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0437000A (ja) * 1990-06-01 1992-02-06 Japan Atom Energy Res Inst 静電加速器
JP2004221016A (ja) * 2003-01-17 2004-08-05 Hitachi High-Technologies Corp イオン注入装置、イオン注入装置におけるｘ線を遮蔽する方法。
TW200826142A (en) * 2006-10-11 2008-06-16 Nissin Ion Equipment Co Ltd Ion implanter
TW200832485A (en) * 2006-11-08 2008-08-01 Silicon Genesis Corp Apparatus and method for introducing particles using a radio frequency quadrupole linear accelerator for semiconductor materials
CN102598195A (zh) * 2009-09-18 2012-07-18 Fei公司 分布式离子源加速镜筒

Also Published As

Publication number Publication date
WO2015137150A1 (fr) 2015-09-17
TW201546863A (zh) 2015-12-16
KR20150121016A (ko) 2015-10-28
KR101645503B1 (ko) 2016-08-05
JP5877936B1 (ja) 2016-03-08
JPWO2015137150A1 (ja) 2017-04-06
US20160013011A1 (en) 2016-01-14
CN105103264B (zh) 2017-04-05
CN105103264A (zh) 2015-11-25

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