TWI568703B - In-Ga-Sn-based oxide sintered body - Google Patents
In-Ga-Sn-based oxide sintered body Download PDFInfo
- Publication number
- TWI568703B TWI568703B TW101130510A TW101130510A TWI568703B TW I568703 B TWI568703 B TW I568703B TW 101130510 A TW101130510 A TW 101130510A TW 101130510 A TW101130510 A TW 101130510A TW I568703 B TWI568703 B TW I568703B
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- Prior art keywords
- sintered body
- oxide
- oxide sintered
- region
- film
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
- C04B35/457—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates based on tin oxides or stannates
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
- C04B35/62605—Treating the starting powders individually or as mixtures
- C04B35/62645—Thermal treatment of powders or mixtures thereof other than sintering
- C04B35/62675—Thermal treatment of powders or mixtures thereof other than sintering characterised by the treatment temperature
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- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/64—Burning or sintering processes
- C04B35/645—Pressure sintering
- C04B35/6455—Hot isostatic pressing
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
- C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
- C04B37/023—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used
- C04B37/026—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used consisting of metals or metal salts
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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| JP2011180929 | 2011-08-22 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US9224820B2 (en) * | 2012-05-31 | 2015-12-29 | Samsung Corning Advanced Glass, Llc | Oxide semiconductor sputtering target, method of manufacturing thin-film transistors using the same, and thin film transistor manufactured using the same |
| TWI566413B (zh) * | 2013-09-09 | 2017-01-11 | 元太科技工業股份有限公司 | 薄膜電晶體 |
| US10515787B2 (en) | 2013-11-29 | 2019-12-24 | Kobelco Research Institute, Inc. | Oxide sintered body and sputtering target, and method for producing same |
| JP5952891B2 (ja) * | 2014-02-14 | 2016-07-13 | 株式会社コベルコ科研 | 酸化物焼結体、およびスパッタリングターゲットの製造方法 |
| WO2016035503A1 (ja) * | 2014-09-02 | 2016-03-10 | 株式会社神戸製鋼所 | 薄膜トランジスタ |
| JP2016054171A (ja) * | 2014-09-02 | 2016-04-14 | 株式会社神戸製鋼所 | 薄膜トランジスタの酸化物半導体薄膜、薄膜トランジスタ、およびスパッタリングターゲット |
| JP6659255B2 (ja) * | 2014-09-02 | 2020-03-04 | 株式会社神戸製鋼所 | 薄膜トランジスタ |
| CN108886059A (zh) * | 2016-04-04 | 2018-11-23 | 株式会社神户制钢所 | 薄膜晶体管 |
| WO2019111603A1 (ja) | 2017-12-05 | 2019-06-13 | ソニー株式会社 | 撮像素子、積層型撮像素子及び固体撮像装置 |
| KR102653048B1 (ko) | 2018-04-20 | 2024-04-01 | 소니그룹주식회사 | 촬상 소자, 적층형 촬상 소자 및 고체 촬상 장치 |
| TWI820114B (zh) * | 2018-04-20 | 2023-11-01 | 日商索尼股份有限公司 | 攝像元件、積層型攝像元件及固體攝像裝置 |
| DE112019004874T5 (de) * | 2018-09-28 | 2021-06-10 | Sony Corporation | Bildaufnahmeelement, gestapeltes bildaufnahmeelement und festkörper-bildaufnahmeeinrichtung |
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| TW200952122A (en) * | 2008-04-16 | 2009-12-16 | Sumitomo Metal Mining Co | TFT-type substrate, TFT LCD device and method for making TFT-type substrate |
| WO2010070944A1 (ja) * | 2008-12-15 | 2010-06-24 | 出光興産株式会社 | 酸化インジウム系焼結体及びスパッタリングターゲット |
| TW201114937A (en) * | 2009-10-30 | 2011-05-01 | Samsung Corning Prec Mat Co | Indium tin oxide sputtering target and transparent conductive film fabricated using the same |
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| JPH04272612A (ja) * | 1991-02-26 | 1992-09-29 | Kojundo Chem Lab Co Ltd | 透明電極 |
| US5407602A (en) * | 1993-10-27 | 1995-04-18 | At&T Corp. | Transparent conductors comprising gallium-indium-oxide |
| JP3925977B2 (ja) * | 1997-02-21 | 2007-06-06 | 旭硝子セラミックス株式会社 | 透明導電膜とその製造方法およびスパッタリングターゲット |
| JP5006598B2 (ja) * | 2005-09-16 | 2012-08-22 | キヤノン株式会社 | 電界効果型トランジスタ |
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| Publication number | Publication date |
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| TW201309616A (zh) | 2013-03-01 |
| JP6167039B2 (ja) | 2017-07-19 |
| JP2017206430A (ja) | 2017-11-24 |
| WO2013027391A1 (ja) | 2013-02-28 |
| JPWO2013027391A1 (ja) | 2015-03-05 |
| JP6389545B2 (ja) | 2018-09-12 |
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