TWI566869B - 回銲製程與機台 - Google Patents

回銲製程與機台 Download PDF

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Publication number
TWI566869B
TWI566869B TW103116030A TW103116030A TWI566869B TW I566869 B TWI566869 B TW I566869B TW 103116030 A TW103116030 A TW 103116030A TW 103116030 A TW103116030 A TW 103116030A TW I566869 B TWI566869 B TW I566869B
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Taiwan
Prior art keywords
chamber
reflow
pressure
gas
door
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TW103116030A
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English (en)
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TW201532718A (zh
Inventor
艾蒂 洪
林修任
陳正庭
鄭明達
劉重希
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台灣積體電路製造股份有限公司
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
    • B23K1/0016—Brazing of electronic components
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/20—Preliminary treatment of work or areas to be soldered, e.g. in respect of a galvanic coating
    • B23K1/203—Fluxing, i.e. applying flux onto surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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    • B23K3/04—Heating appliances
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Description

回銲製程與機台
本申請案係關於半導體製程與其相關機台，特別是關於回銲製程與其相關機台。
半導體器件用於多種電子應用中，諸如(舉例而言)個人電腦、行動電話、數位攝影機及其他電子設備。通常藉由順序沈積絕緣或介電層、導電層及半導體材料層於半導體基板上且使用微影來圖案化各種材料層以在其上形成電路組件及元件而製作半導體器件。
通常在單一半導體晶圓上製造數十或數百個積體電路。藉由沿著切割道鋸切積體電路而單粒化個別晶粒。作為實例，個別晶粒接著被單獨封裝，封裝於多晶片模組中或以其他類型之封裝進行封裝。
通常藉由回銲銲料以附接各種組件來製作各種封裝。此銲料可提供彼等組件之間的電連接，以及提供將組件緊固在一起的機械連接。
本揭露提供一種方法，包含：在一回銲機台之一腔室的一封閉環境中封閉一封裝工件；使得該腔室之該封閉環境的氧含量小於百萬分之四十(40ppm)；及在該氧含量小於40ppm的同時在該腔室之該封閉環境中執行一回銲製程，該回銲製程對該封裝工件之一可回銲材料進行回銲。
在一些實施例中，該封閉該封裝工件包含關閉該腔室之一門以形成該腔室的該封閉環境。
在一些實施例中，該使得該氧含量小於40ppm包含將一惰性氣體供應至該封閉環境，同時自該封閉環境移除一環境氣體。
在一些實施例中，該惰性氣體包含氮。
在一些實施例中，該移除該環境氣體包含使用一排氣系統來移除該環境氣體。
在一些實施例中，以至少17立方公尺/分鐘的一流動速率供應該惰性氣體。
在一些實施例中，該方法進一步包含：在一置物台上提供該封裝工件；將該置物台及該封裝工件移動至該腔室中；在將該置物台及該封裝工件移動至該腔室中之後，關閉該腔室的一門以將該封裝工件封閉於該封閉環境中；在關閉該門之後，將來自該封閉環境之一排氣的一壓力設定為小於5mm H2O；在設定該排氣之該壓力之後，以至少17立方公尺/分鐘之一流動速率將一惰性氣體供應至該封閉環境，該供應該惰性氣體至少部分使得該封閉環境之該氧含量小於40ppm；在該執行該回銲製程之後，停止該供應該惰性氣體；及在停止該惰性氣體的該供應之後，開啟該腔室的該門。
本揭露提供一種方法，包含：將一封裝工件移動至一回銲機台的一腔室中；在該封裝工件處於該腔室中之後，關閉該腔室的一門；在關閉該門之後，將一惰性氣體供應至該腔室以減低該腔室中的氧含量；在該腔室中之該氧含量小於百萬分之四十(40ppm)的同時，執行一回銲製程以對該封裝工件之一含有銲料的材料進行回銲；及在執行該回銲製程之後，停止該惰性氣體的該供應。
在一些實施例中，該惰性氣體包含氮。
在一些實施例中，以至少17立方公尺/分鐘的一流動速率供應 該惰性氣體。
在一些實施例中，該方法進一步包含在關閉該門之後且在供應該惰性氣體的同時使得來自該腔室的一排氣提供小於5mm H2O的一壓力。
在一些實施例中，將該封裝工件移動至該腔室中包含將該封裝工件收納於一置物台上且將該置物台與該封裝工件一起移動至該腔室中。
在一些實施例中，該方法進一步包含：在停止該惰性氣體的該供應之後，開啟該腔室的該門；及在開啟該門之後，使得來自該腔室之一排氣提供大於15mm H2O的一壓力。
在一些實施例中，該執行該回銲製程包含使用紅外線(IR)輻射。
本揭露提供一種裝置，包含：一回銲腔室；至該回銲腔室的一門，該門可操作以封閉該回銲腔室中的一環境；該回銲腔室中的一能量源，該能量源可操作以使該回銲腔室中之該環境的一溫度增加；及耦接至該腔室之氣體供應設備，該氣體供應設備可操作以將一氣體提供至該回銲腔室。
在一些實施例中，該裝置進一步包含耦接至該腔室的一排氣系統，該排氣系統可操作以自該回銲腔室移除一環境氣體。
在一些實施例中，該裝置進一步包含一可移動置物台，該可移動置物台可操作以經由經組態以由該門關閉的一門口進入該回銲腔室。
在一些實施例中，該裝置進一步包含耦接至該回銲腔室之氧感測器，該氧感測器可操作以判定該回銲腔室中的該環境的氧含量。
在一些實施例中，該能量源包含一紅外線燈。
在一些實施例中，該裝置進一步包含控制器設備，該控制器設 備可操作以控制該門之移動、該氣體供應設備之一操作及該能量源的一操作。
上文已相當廣泛地概述本揭露之技術特徵，俾使下文之本揭露詳係描述得以獲得較佳瞭解。構成本揭露之申請專利範圍標的之其他技術特徵將描述於下文。本揭露所屬技術領域中具有通常知識者應瞭解，可相當容易地利用下文揭示之概念與特定實施例可作為修改或設計其他結構或製程而實現與本揭露相同之目的。本揭露所屬技術領域中具有通常知識者亦應瞭解，這類等效建構無法脫離後附之申請專利範圍所界定之本揭露的精神和範圍。
10‧‧‧第一工件
12‧‧‧可回銲材料
14‧‧‧第二工件
16‧‧‧置物台
18‧‧‧移動
20‧‧‧回銲腔室
22‧‧‧能量源
24‧‧‧排氣系統
26‧‧‧操作
30‧‧‧門
32‧‧‧操作
34‧‧‧惰性氣體
40‧‧‧移出
42‧‧‧操作
100‧‧‧置物台
102‧‧‧能量源
104‧‧‧排氣系統
105‧‧‧氣體供應設備
106‧‧‧門
108‧‧‧感測器設備
110‧‧‧控制器設備
112‧‧‧腔室面板
200‧‧‧封裝組件
202‧‧‧晶粒
204‧‧‧可回銲外部電連接器
300‧‧‧封裝組件
302‧‧‧扇出型晶圓級封裝(FOWLP)
304‧‧‧晶粒
306‧‧‧囊封劑
308‧‧‧重新分佈結構
310‧‧‧可回銲外部電連接器
400‧‧‧第一封裝
402‧‧‧封裝組件
404‧‧‧晶粒
406‧‧‧可回銲外部電連接器
408‧‧‧第二封裝
410‧‧‧封裝組件
412‧‧‧晶粒
414‧‧‧導線
416‧‧‧囊封劑
420‧‧‧可回銲外部電連接器
在與隨附諸圖一起研讀時自以下詳細描述最佳地理解本發明的態樣。請注意，根據行業中的標準做法，並未按比例繪製各種特徵。實際上，為了論述清楚，可任意增加或減少各種特徵的尺寸。
圖1至圖3為根據一實施例的簡化回銲機台及製程。
圖4為根據一實施例之回銲製程流程圖。
圖5為根據一實施例的回銲機台。
圖6說明實施例可應用至之實例工件的覆晶組態。
圖7為作為實施例可應用至之實例工件的扇出型晶圓級封裝(FOWLP)。
圖8為作為實施例可應用至之實例工件的疊層封裝(POP)。
以下揭示內容提供用於實施所提供標的物之不同特徵的許多不同實施例或實例。下文描述組件及配置的特定實例以簡化本發明。當然，此等特定實例僅為實例且不意欲係限制性的。舉例而言，在以下描述中第一特徵形成於第二特徵上方或上可包括直接接觸地形成第一 及第二特徵的實施例，且亦可包括額外特徵可形成於第一特徵與第二特徵之間使得第一特徵與第二特徵可不直接接觸的實施例。此外，本發明在各種實例中可重複參考數字及/或字母。此重複係出於簡單且清楚之目的，且自身並不規定所論述之各種實施例及/或組態之間的關係。另外，本文中所論述之製程/方法可被論述為以特定次序執行；其他製程/方法實施例可以任何邏輯次序執行。
圖1至圖3說明根據一實施例的簡化回銲機台及製程。圖4為根據一實施例之回銲製程流程圖。將在說明於圖4中之製程流程的內容脈絡中論述圖1至圖3。一般熟習此項技術者將易於理解，本文中所論述之實施例可如何經修改同時保持在實施例之預期範疇內。
圖1說明將藉由可回銲材料12以機械及/或電的方式耦接的第一工件10及第二工件14。第一工件10及第二工件14可為積體電路晶粒、仲介層、有機基板、印刷電路板(PCB)、含有晶粒之封裝，或其類似者。可回銲材料12可為能夠被回銲的任何材料，諸如銲料或更特定而言無鉛銲料。為易於參考，第一工件10、第二工件14及可回銲材料12被統稱為封裝工件。儘管為了清楚說明了單一封裝工件，但回銲機台及製程可同時容納多個封裝工件(諸如在分批法中)。可使用舟皿經由回銲機台加工一或多個封裝工件。
在圖1中，封裝工件(或上面有封裝工件的舟皿)由回銲機台之置物台16收納(圖4之步驟50)，且具有封裝工件之置物台16被移動18至回銲機台的回銲腔室20中(步驟52)。封裝工件之收納以及置物台16與封裝工件的移動可藉由自動化及/或手動程序進行。回銲機台進一步包含能量源22及排氣系統24。在置物台16及封裝工件正移動至腔室20中的同時，排氣系統24可正操作26以變更及/或移除腔室20中的環境。排氣系統24之此操作26可在(例如)大於約5mm H2O的壓力(第一壓力)下。
在圖2中，一旦置物台16及封裝工件處於腔室20中，腔室20的門30便被關閉(步驟54)，此時，減低排氣系統24的操作32(步驟56)。門30可為自動關閉的自動門，且在其他實施例中，門30可被手動關閉。門30的關閉可至少防止來自腔室20外部之環境的一些氧進入腔室20。排氣系統24之操作32可被減少至(例如)小於約5mm H2O的壓力(第二壓力)。接著將惰性氣體34供應至腔室20中以開始淨化製程(步驟58)。在一實施例中，惰性氣體34為氮(N2)氣，且在其他實施例中，惰性氣體34可為形成氣體、類似者或其組合。可以至少約17立方公尺/分鐘的流動速率供應惰性氣體34。
在淨化製程期間，可減少腔室中之氧(O2)含量。一旦氧含量被減少至預定量以下，便執行回銲製程(步驟60)。在一實施例中，腔室中之氧含量的預定量為百萬分之四十(40ppm)，儘管在其他實施例中可使用不同量。回銲製程可包含回銲機台之能量源22將熱及/或能量施加至封裝工件以對可回銲材料12進行回銲。在一些實施例中，能量源22可包含輻射源，諸如將紅外線(IR)輻射提供至封裝工件的一或多個IR燈。在一實施例中，10個IR燈用於機台中的腔室中，且每一燈為4.2kW燈。在此實施例中，IR燈可接通歷時約4秒與約10秒之間，諸如約6秒。此情形可使得腔室20中之環境達到在約40℃與約60℃之間的溫度，且更特定而言在約45℃與約55℃之間的溫度，該溫度可回銲諸如銲料的可回銲材料12。在其他實施例中，可使用其他能源。另外，可使用不同持續時間，且可使用不同溫度。因此，在一實施例中，可在低氧含量環境中，諸如具有小於40ppm的氧的環境中進行回銲製程。一旦已對可回銲材料12進行了回銲，回銲製程便可諸如藉由關斷能量源22而結束，且惰性氣體淨化可藉由停止對腔室20供應惰性氣體34而結束(步驟62)。淨化時間(例如)視回銲時間及/或溫度的規範而為可變的或可控制的。
在圖3中，一旦完成了回銲製程及/或惰性氣體淨化，便開啟腔室20的門30(步驟64)。一旦開啟了門30，便可使排氣系統24之操作42增加(步驟66)，諸如至大於約15mm H2O的壓力。又，在開啟了門30之後，封裝工件在可回銲材料12經回銲的情況下可被移出40腔室20。風扇亦可被接通以冷卻腔室20(步驟68)。
圖5說明根據一實施例的回銲機台。為易於描述不同組件，說明X-Y-Z軸線。圖中自腔室移除了腔室面板112以說明腔室內的組件。一般熟習此項技術者將理解，在操作期間腔室面板112將為腔室的一壁。
如所說明，回銲機台包含置物台100及腔室中的能量源102。腔室具有門106。置物台100可沿著軌道穿過門106且在Y方向上移動。自動化螺桿機構或其他驅動機構可沿著軌道移動置物台100。螺桿機構包括可旋轉螺紋軸。置物台100耦接至此螺紋軸。當螺紋軸圍繞其縱向軸線在一個方向上旋轉時，置物台100朝向腔室移動及/或移動至腔室中，且當螺紋軸圍繞其縱向軸線在相反方向上旋轉時，置物台100移動遠離腔室及/或移出腔室。在其他實施例中，可藉由環繞兩個或兩個以上輥子或滑輪的傳送帶移動置物台100。置物台100可經組態以能夠在回銲製程期間收納並緊固一或多個舟皿，其中每一舟皿包含一或多個封裝工件。自動化氣動活塞或其他驅動機構可使門106沿著軌道且在Z方向上移動。
在一實施例中，能量源102包含一或多個IR燈。在此實施例中，腔室具有10個IR燈，該等IR燈可位於置物台100上方、下方，或者上方與下方。在此實施例中，IR燈各自為4.2kW。IR燈在回銲製程期間可接通歷時約4秒與約10秒之間，諸如約6秒，且可使得腔室中之環境達到在約40℃與約60℃之間的溫度，諸如在約45℃與約55℃之間的溫度，該溫度可使得諸如銲料之可回銲材料回銲。在其他實施例中，能 量源102可包含對流熱源或任何可接受能量源。
回銲機台包含耦接至腔室的排氣系統104。排氣系統104可包含風扇。排氣系統104可具有可控制操作，使得排氣系統104可提供可變或可調整壓力。在一些實施例中，排氣系統104可在給定製程期間提供小於約5mm H2O、大於約5mm H2O、大於約15mm H2O的壓力或其他壓力。氣體供應設備105耦接至腔室以在淨化製程期間將諸如氮、形成氣體或其類似者的惰性氣體供應至腔室。氣體供應設備105包含可同時操作以供應惰性氣體的兩個鼓風機。在一些實施例中，例如，氣體供應設備105可控制以提供可變流動速率的惰性氣體，且可為可操作的以提供至少約17立方公尺/分鐘的流動速率。氣體供應設備105可根據回銲時間及/或溫度之規範在可變或可控制時間中提供惰性氣體。感測器設備108耦接至腔室，並感測腔室之環境中的氧含量。在一實施例中，感測器設備108可為可操作的以感測腔室之環境中的氧含量何時小於40ppm。
回銲機台亦包含控制器設備110。在一實施例中，控制器設備110可為可程式化邏輯控制器(PLC)。在另一實施例中，控制器設備110可包括儲存於諸如非暫時性記憶體(像RAM、ROM或其類似者)的儲存媒體上的程式碼，及執行程式碼的處理器。在其他實施例中，控制器設備可為實施各種動作的硬連線電路或其他組態，或可為PLC、執行程式碼之處理器、硬連線電路或其他組態的任何組合。
控制器設備110可控制回銲機台之各種組件的操作。舉例而言，控制器設備110可控制致動器，該等致動器控制移動門106及/或置物台100的器件。控制器設備110可控制由氣體供應設備提供之惰性氣體流動何時經接通及關斷，且可控制惰性氣體的流動速率。控制器設備110可控制排氣系統104何時經接通及關斷，且可控制由排氣系統104提供的壓力。控制器設備110可接收來自感測器設備108的關於腔室中 之環境中之氧含量的指示，且可控制在何時接通或關斷能量源102及能量源102被調整至的功率位準。控制器設備110可實施關於圖1至圖4論述之各種動作。
實施例可提供優點。舉例而言，一些實施例在回銲製程期間可提供回銲機台之腔室中的低氧含量環境。此情形可允許(例如)減少由銲料接合之基板之間的接點的銲料表面上的氧化。因此，冷接點(cold joint)之風險可被減少，且良率可得以增加。另外，藉由使用至回銲機台之腔室的門，諸如氮或其類似者之惰性氣體的使用可被減少，此情形可減少成本。又，實施例可與甲酸氣體製程相容。
圖6至圖8說明各種實施例可應用至的各種封裝工件。儘管本文中未明確論述，許多其他類型之工件可用於實施例中。一般熟習此項技術者將易於理解實施例可應用至的不同工件。此等工件預期為在各種實施例的範疇內。
圖6說明實施例可應用至之實例工件的覆晶組態。覆晶組態包括覆晶結合至封裝組件200的晶粒202。諸如可控崩潰晶片連接(C4)凸塊、其他凸塊或其他電連接器的可回銲外部電連接器204將晶粒202機械及/或電耦接至封裝組件200。晶粒202可為記憶體晶粒；邏輯晶粒，諸如中央處理單元(CPU)、圖形處理單元(GPU)，或其類似者；或任何其他類型之晶粒。封裝組件200可為封裝基板(例如，有機基板)、仲介層、PCB或其類似者。晶粒202包括各別可回銲外部電連接器204機械且電耦接至的結合結構，諸如凸塊下金屬(UBM)結構、鈍化後互連(PPI)結構、跡線結構及/或其類似者。另外，封裝組件200具有各別可回銲外部電連接器204機械且電耦接至的結合結構。在一實施例中，可回銲外部電連接器204為銲料，諸如無鉛銲料。晶粒202可至少部分藉由根據上文所論述之回銲製程及/或在如上文所論述之回銲機台中對可回銲外部電連接器204進行回銲而附接至封裝組件200。
圖7為作為實施例可應用至之實例工件的扇出型晶圓級封裝(FOWLP)302。封裝302包括藉由諸如模製化合物之囊封劑306囊封的晶粒304，及重新分佈結構308。晶粒304可為記憶體晶粒；邏輯晶粒，諸如CPU、GPU，或其類似者；或任何其他類型之晶粒。結構進一步包括封裝組件300，諸如PCB、有機基板或其類似者。諸如球狀柵格陣列(BGA)球、凸塊或其他電連接器的可回銲外部電連接器310將封裝302機械地耦接至封裝組件300，且進一步結合重新分佈結構308將晶粒304電耦接至封裝組件300。重新分佈結構308包括各別可回銲外部電連接器310機械且電耦接至的結合結構，諸如UBM結構、PPI結構、跡線結構及/或其類似者。另外，封裝組件300具有各別可回銲外部電連接器310機械且電耦接至的結合結構。在一實施例中，可回銲外部電連接器310為銲料，諸如無鉛銲料。封裝302可至少部分藉由根據上文所論述之回銲製程及/或在如上文所論述之回銲機台中對可回銲外部電連接器310進行回銲而附接至封裝組件300。
圖8為作為實施例可應用至之實例工件的疊層封裝(POP)。結構包括第二封裝408堆疊於上面的第一封裝400。第一封裝400包括覆晶結合至封裝組件402的晶粒404。諸如C4凸塊、其他凸塊或其他電連接器的可回銲外部電連接器406將晶粒404機械及/或電耦接至封裝組件402。晶粒404可為記憶體晶粒；邏輯晶粒，諸如CPU、GPU，或其類似者；或任何其他類型之晶粒。封裝組件402可為封裝基板(例如，有機基板)、仲介層、PCB或其類似者。晶粒404包括各別可回銲外部電連接器406機械且電耦接至的結合結構，諸如UBM結構、PPI結構、跡線結構及/或其類似者。另外，封裝組件402具有各別可回銲外部電連接器406機械且電耦接至的結合結構。在一實施例中，可回銲外部電連接器406為銲料，諸如無鉛銲料。晶粒404可至少部分藉由根據上文所論述之回銲製程及/或在如上文所論述之回銲機台中對可回 銲外部電連接器406進行回銲而附接至封裝組件402。
第二封裝408包括晶粒412，該晶粒412諸如藉由晶粒412之非作用中側上的黏著劑而黏著至封裝組件410。導線414將晶粒412之作用中側電耦接至封裝組件410。晶粒412可為記憶體晶粒；邏輯晶粒，諸如CPU、GPU，或其類似者；或任何其他類型之晶粒。封裝組件410可為封裝基板(例如，有機基板)、仲介層、PCB或其類似者。晶粒412包括導線414機械且電耦接至的結合結構。另外，封裝組件410具有導線414機械且電耦接至的結合結構。晶粒412及導線414由囊封劑416(諸如由模製化合物)囊封。
諸如BGA球、凸塊或其他電連接器的可回銲外部電連接器420將第二封裝408機械耦接至第一封裝400。封裝組件402具有各別可回銲外部電連接器420機械且電耦接至的結合結構。類似地，封裝組件410具有各別可回銲外部電連接器420機械且電耦接至的結合結構。在一實施例中，可回銲外部電連接器420為銲料，諸如無鉛銲料。第二封裝408可至少部分藉由根據上文所論述之回銲製程及/或在如上文所論述之回銲機台中對可回銲外部電連接器420進行回銲而附接至第一封裝400。
一實施例為一種方法，該方法包含：在一回銲機台之一腔室的一封閉環境中封閉一封裝工件；使得該腔室之該封閉環境的氧含量小於百萬分之四十(40ppm)；及在該氧含量小於40ppm的同時在該腔室之該封閉環境中執行一回銲製程。該回銲製程對該封裝工件之一可回銲材料進行回銲。
另一實施例為一種方法，該方法包含將一封裝工件移動至一回銲機台的一腔室中；在該封裝工件處於該腔室中之後，關閉該腔室的一門；在關閉該門之後，將一惰性氣體供應至該腔室以減低該腔室中的氧含量；在該腔室中之該氧含量小於百萬分之四十(40ppm)的同 時，執行一回銲製程以對該封裝工件之一含有銲料的材料進行回銲；及在執行該回銲製程之後，停止該惰性氣體的該供應。
其他實施例係一種裝置，該裝置包含一回銲腔室；至該回銲腔室的一門；該回銲腔室中的一能量源；及耦接至該腔室之氣體供應設備。該門可操作以封閉該回銲腔室中的一環境。該能量源可操作以使該回銲腔室中之該環境的一溫度增加。該氣體供應設備可操作以將一氣體提供至該回銲腔室。
前述內容概述若干實施例之特徵，使得熟習此項技術者可更好地理解本發明之態樣。熟習此項技術者應瞭解，其可易於使用本發明作為基礎從而設計或修改用於進行與本文中所介紹之實施例相同之用途及/或達成相同之優點的其他製程及結構。熟習此項技術者亦應認識到，此等等效構造並不偏離本發明之精神及範疇，且熟習此項技術者在本文中可進行各種改變、取代及替代而不偏離本發明的精神及範疇。

Claims (10)

  1. 一種用於回銲的方法，其包含：將一封裝工件移動至回銲機台的腔室中，並在移動該封裝工件至該回銲機台的該腔室時將排氣系統設定在第一壓力並將氣體從該腔室移除；在該腔室的一封閉環境中封閉該封裝工件，使得該腔室之該封閉環境的氧含量小於百萬分之四十(40ppm)，其中該封閉該封裝工件使得氧含量小於百萬分之四十的步驟包括將該排氣系統設定在小於該第一壓力的第二壓力；以及在該氧含量小於40ppm的同時在該腔室之該封閉環境中執行一回銲製程，該回銲製程對該封裝工件之一可回銲材料進行回銲。
  2. 如請求項1之方法，其進一步包含：在一置物台上提供該封裝工件，其中該將一封裝工件移動至回銲機台的腔室中的步驟包含將該置物台及該封裝工件移動至該腔室中；在將該置物台及該封裝工件移動至該腔室中之後，關閉該腔室的一門以將該封裝工件封閉於該封閉環境中，其中該將該排氣系統設定在第二壓力的步驟係在關閉該門之後進行，而該第二壓力被設定為小於5mm H2O；在設定該排氣系統之該第二壓力之後，以至少17立方公尺/分鐘之一流動速率將一惰性氣體或一甲酸氣體供應至該封閉環境，該供應該惰性氣體或該甲酸氣體至少部分使得該封閉環境之該氧含量小於40ppm；在該執行該回銲製程之後，停止該供應該惰性氣體或該甲酸 氣體；及在停止該惰性氣體或該甲酸氣體的該供應之後，開啟該腔室的該門。
  3. 一種用於回銲的方法，其包含：將一封裝工件移動至一回銲機台的一腔室中，同時藉由排氣系統將氣體從該腔室移除，該排氣系統被設定在第一壓力；在該封裝工件處於該腔室中之後，關閉該腔室的一門；在關閉該門之後，藉由將一惰性氣體供應至該腔室並且將該排氣系統設定在第二壓力而從該腔室移除氣體以減低該腔室中的氧含量，該第二壓力小於該第一壓力；在該腔室中之該氧含量小於百萬分之四十(40ppm)的同時，執行一回銲製程以對該封裝工件之一含有銲料的材料進行回銲；及在執行該回銲製程之後，停止該惰性氣體的該供應。
  4. 如請求項3之方法，其進一步包含：在停止該惰性氣體的該供應之後，開啟該腔室的該門；及在開啟該門之後，使得來自該腔室之一排氣提供大於15mm H2O的一壓力。
  5. 一種用於回銲的裝置，其包含：一回銲腔室；至該回銲腔室的一門，該門可操作以封閉該回銲腔室中的一環境；該回銲腔室中的一能量源，該能量源可操作以使該回銲腔室中之該環境的一溫度增加；耦接至該回銲腔室之氣體供應設備，該氣體供應設備可操作以將一氣體提供至該回銲腔室；以及耦接至該回銲腔室的排氣系統， 其中該排氣系統經配置以在一封裝工件移動至該回銲腔室過程中，被設定在第一壓力並將氣體從該回銲腔室移除，並且經配置以在該封裝工件被封閉在該回銲腔室的封閉環境時，被設定在小於該第一壓力的第二壓力並將氣體從該回銲腔室移除。
  6. 如請求項5之裝置，其中該第二壓力為小於5mm H2O。
  7. 如請求項5之裝置，其進一步包含一可移動置物台，該可移動置物台可操作以經由經組態以由該門關閉的一門口進入該回銲腔室。
  8. 如請求項5之裝置，其進一步包含耦接至該回銲腔室之氧感測器，該氧感測器可操作以判定該回銲腔室中的該環境的氧含量。
  9. 如請求項5之裝置，其中該能量源包含一紅外線燈。
  10. 如請求項5之裝置，其進一步包含控制器設備，該控制器設備可操作以控制該門之移動、該氣體供應設備之一操作及該能量源的一操作。
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Publication number Priority date Publication date Assignee Title
US10147617B2 (en) * 2016-01-21 2018-12-04 Yield Engineering Systems, Inc. Method for the rapid processing of polymer layers in support of imidization processes and fan out wafer level packaging including efficient drying of precursor layers
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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5451274A (en) * 1994-01-31 1995-09-19 Motorola, Inc. Reflow of multi-layer metal bumps
TW323429B (zh) * 1995-05-19 1997-12-21 Hitachi Ltd
CN1323508A (zh) * 1998-10-13 2001-11-21 松下电器产业株式会社 加热装置和加热方法
TW201142962A (en) * 2010-05-28 2011-12-01 Taiwan Semiconductor Mfg Wafer-level reflow apparatuses and fabrication methods for solder balls and flip chip assemblies

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6471115B1 (en) * 1990-02-19 2002-10-29 Hitachi, Ltd. Process for manufacturing electronic circuit devices
US8440503B1 (en) 2011-11-16 2013-05-14 Taiwan Semiconductor Manufacturing Company, Ltd. Methods for performing reflow in bonding processes
US9538582B2 (en) 2012-07-26 2017-01-03 Taiwan Semiconductor Manufacturing Company, Ltd. Warpage control in the packaging of integrated circuits

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5451274A (en) * 1994-01-31 1995-09-19 Motorola, Inc. Reflow of multi-layer metal bumps
TW323429B (zh) * 1995-05-19 1997-12-21 Hitachi Ltd
CN1323508A (zh) * 1998-10-13 2001-11-21 松下电器产业株式会社 加热装置和加热方法
TW201142962A (en) * 2010-05-28 2011-12-01 Taiwan Semiconductor Mfg Wafer-level reflow apparatuses and fabrication methods for solder balls and flip chip assemblies

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