TWI562287B - Vertical transistor devices for embedded memory and logic technologies - Google Patents

Vertical transistor devices for embedded memory and logic technologies

Info

Publication number
TWI562287B
TWI562287B TW103133277A TW103133277A TWI562287B TW I562287 B TWI562287 B TW I562287B TW 103133277 A TW103133277 A TW 103133277A TW 103133277 A TW103133277 A TW 103133277A TW I562287 B TWI562287 B TW I562287B
Authority
TW
Taiwan
Prior art keywords
vertical transistor
transistor devices
embedded memory
logic technologies
technologies
Prior art date
Application number
TW103133277A
Other languages
English (en)
Other versions
TW201526163A (zh
Inventor
Brian S Doyle
Uday Shah
Roza Kotlyar
Charles C Kuo
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Publication of TW201526163A publication Critical patent/TW201526163A/zh
Application granted granted Critical
Publication of TWI562287B publication Critical patent/TWI562287B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66666—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7827—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
    • H01L29/1037—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure and non-planar channel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
    • H01L29/1054—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a variation of the composition, e.g. channel with strained layer for increasing the mobility
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/161—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys
    • H01L29/165—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys in different semiconductor regions, e.g. heterojunctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
    • H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4983—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET with a lateral structure, e.g. a Polysilicon gate with a lateral doping variation or with a lateral composition variation or characterised by the sidewalls being composed of conductive, resistive or dielectric material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66356—Gated diodes, e.g. field controlled diodes [FCD], static induction thyristors [SITh], field controlled thyristors [FCTh]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66363—Thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7391—Gated diode structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/749—Thyristor-type devices, e.g. having four-zone regenerative action with turn-on by field effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
    • H01L29/7848—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate the means being located in the source/drain region, e.g. SiGe source and drain
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/161—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
TW103133277A 2013-09-27 2014-09-25 Vertical transistor devices for embedded memory and logic technologies TWI562287B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US14/039,696 US9306063B2 (en) 2013-09-27 2013-09-27 Vertical transistor devices for embedded memory and logic technologies

Publications (2)

Publication Number Publication Date
TW201526163A TW201526163A (zh) 2015-07-01
TWI562287B true TWI562287B (en) 2016-12-11

Family

ID=52739243

Family Applications (2)

Application Number Title Priority Date Filing Date
TW103133277A TWI562287B (en) 2013-09-27 2014-09-25 Vertical transistor devices for embedded memory and logic technologies
TW105130837A TWI620275B (zh) 2013-09-27 2014-09-25 用於嵌入式記憶體及邏輯技術之垂直電晶體裝置

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW105130837A TWI620275B (zh) 2013-09-27 2014-09-25 用於嵌入式記憶體及邏輯技術之垂直電晶體裝置

Country Status (6)

Country Link
US (2) US9306063B2 (zh)
EP (1) EP3050115A4 (zh)
KR (1) KR20160061967A (zh)
CN (1) CN105518867B (zh)
TW (2) TWI562287B (zh)
WO (1) WO2015047671A1 (zh)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9312257B2 (en) * 2012-02-29 2016-04-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8890119B2 (en) * 2012-12-18 2014-11-18 Intel Corporation Vertical nanowire transistor with axially engineered semiconductor and gate metallization
US9570612B2 (en) * 2014-06-27 2017-02-14 Taiwan Semiconductor Manufacturing Company Limited Method and structure for straining carrier channel in vertical gate all-around device
US9698261B2 (en) 2014-06-30 2017-07-04 Taiwan Semiconductor Manufacturing Co., Ltd. Vertical device architecture
US9425324B2 (en) * 2014-09-30 2016-08-23 Taiwan Semiconductor Manufacturing Company Limited Semiconductor device and channel structure thereof
US9590084B2 (en) * 2014-11-26 2017-03-07 Taiwan Semiconductor Manufacturing Company, Ltd. Graded heterojunction nanowire device
US9773904B2 (en) 2015-09-11 2017-09-26 Samsung Electronics Co., Ltd. Vertical field effect transistor with biaxial stressor layer
US10008580B2 (en) 2016-03-21 2018-06-26 Samsung Electronics Co., Ltd. FET including an InGaAs channel and method of enhancing performance of the FET
US9748385B1 (en) * 2016-07-21 2017-08-29 International Business Machines Corporation Method for forming vertical Schottky contact FET
KR102519665B1 (ko) 2016-08-05 2023-04-07 삼성전자주식회사 집적회로 장치 및 그 제조 방법
CN106298875B (zh) * 2016-09-30 2021-08-20 中国科学院微电子研究所 半导体器件及其制造方法及包括该器件的电子设备
KR102568718B1 (ko) 2016-11-09 2023-08-21 삼성전자주식회사 반도체 장치
KR102695150B1 (ko) 2016-12-09 2024-08-14 삼성전자주식회사 반도체 소자 및 그 제조 방법
KR102699046B1 (ko) * 2016-12-15 2024-08-27 삼성전자주식회사 수직형 트랜지스터를 구비하는 집적 회로 및 이를 포함하는 반도체 장치
US10319731B2 (en) 2017-08-10 2019-06-11 Globalfoundries Inc. Integrated circuit structure having VFET and embedded memory structure and method of forming same
KR102396806B1 (ko) 2017-08-31 2022-05-12 마이크론 테크놀로지, 인크 반도체 장치, 하이브리드 트랜지스터 및 관련 방법
JP7124059B2 (ja) 2017-08-31 2022-08-23 マイクロン テクノロジー，インク． 半導体デバイス、トランジスタ、および金属酸化物半導体デバイスを接触させるための関連する方法
US10170376B1 (en) * 2017-10-22 2019-01-01 United Microelectronics Corp. Device and forming method thereof
US10297668B1 (en) 2018-01-22 2019-05-21 International Business Machines Corporation Vertical transport fin field effect transistor with asymmetric channel profile
US10439044B1 (en) 2018-04-17 2019-10-08 International Business Machines Corporation Method and structure of fabricating I-shaped silicon germanium vertical field-effect transistors
US10777658B2 (en) 2018-04-17 2020-09-15 International Business Machines Corporation Method and structure of fabricating I-shaped silicon vertical field-effect transistors
US10461184B1 (en) 2018-05-04 2019-10-29 International Business Machines Corporation Transistor having reduced gate-induced drain-leakage current
US10943835B2 (en) 2018-10-05 2021-03-09 International Business Machines Corporation Fabrication of silicon germanium channel and silicon/silicon germanium dual channel field-effect transistors
EP3857605A4 (en) * 2018-10-09 2022-09-14 Micron Technology, Inc. HETEROGENOUS CHANNEL TRANSISTORS AND RELATED DEVICES, ELECTRONIC SYSTEMS AND METHODS
WO2020076652A1 (en) * 2018-10-09 2020-04-16 Micron Technology, Inc. Semiconductor devices comprising transistors having increased threshold voltage and related methods and systems
KR20210056443A (ko) * 2018-10-09 2021-05-18 마이크론 테크놀로지, 인크 디바이스를 형성하는 방법, 및 관련 디바이스 및 전자 시스템
CN109326650B (zh) * 2018-10-10 2022-04-19 中国科学院微电子研究所 半导体器件及其制造方法及包括该器件的电子设备
US10700062B2 (en) 2018-10-12 2020-06-30 International Business Machines Corporation Vertical transport field-effect transistors with uniform threshold voltage
KR102059896B1 (ko) * 2018-10-24 2019-12-27 가천대학교 산학협력단 양자우물 구조를 갖는 1t 디램 셀 소자
KR102198765B1 (ko) * 2019-01-29 2021-01-05 한국과학기술원 이종접합 구조의 수직형 트랜지스터 및 그 제조 방법
KR20210132809A (ko) * 2020-04-28 2021-11-05 삼성전자주식회사 반도체 메모리 장치 및 이의 제조 방법
US11373914B2 (en) 2020-08-27 2022-06-28 Micron Technology, Inc. Array of vertical transistors, an array of memory cells comprising an array of vertical transistors, and a method used in forming an array of vertical transistors
CN113611671B (zh) * 2021-08-06 2023-04-07 长鑫存储技术有限公司 半导体结构及其制备方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200625464A (en) * 2004-05-26 2006-07-16 Koninkl Philips Electronics Nv Electric device with vertical component
US20090008631A1 (en) * 2006-01-25 2009-01-08 Nxp B.V. Nanowire tunneling transistor
TW201110348A (en) * 2009-05-20 2011-03-16 Micron Technology Inc Vertically-oriented semiconductor selection device providing high drive current in cross-point array memory
TW201330268A (zh) * 2011-10-12 2013-07-16 Ibm 具有不對稱閘極的垂直電晶體

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6744083B2 (en) 2001-12-20 2004-06-01 The Board Of Regents, The University Of Texas System Submicron MOSFET having asymmetric channel profile
KR100537101B1 (ko) 2003-12-27 2005-12-16 동부아남반도체 주식회사 수직형 트랜지스터의 제조방법
US7262089B2 (en) * 2004-03-11 2007-08-28 Micron Technology, Inc. Methods of forming semiconductor structures
CN100485482C (zh) 2004-10-14 2009-05-06 清华大学 导光板和背光模组
WO2007022359A2 (en) * 2005-08-16 2007-02-22 The Regents Of The University Of California Vertical integrated silicon nanowire field effect transistors and methods of fabrication
US7425491B2 (en) 2006-04-04 2008-09-16 Micron Technology, Inc. Nanowire transistor with surrounding gate
JP4271210B2 (ja) * 2006-06-30 2009-06-03 株式会社東芝 電界効果トランジスタ、集積回路素子、及びそれらの製造方法
US7709312B2 (en) 2006-09-29 2010-05-04 Intel Corporation Methods for inducing strain in non-planar transistor structures
JP5032418B2 (ja) 2008-08-22 2012-09-26 株式会社東芝 電界効果トランジスタ、集積回路素子、及びそれらの製造方法
US8313999B2 (en) * 2009-12-23 2012-11-20 Intel Corporation Multi-gate semiconductor device with self-aligned epitaxial source and drain
US8913422B2 (en) 2012-09-28 2014-12-16 Intel Corporation Decreased switching current in spin-transfer torque memory
US8890119B2 (en) 2012-12-18 2014-11-18 Intel Corporation Vertical nanowire transistor with axially engineered semiconductor and gate metallization
US8786040B2 (en) 2012-12-21 2014-07-22 Intel Corporation Perpendicular spin transfer torque memory (STTM) device having offset cells and method to form same
US8796797B2 (en) 2012-12-21 2014-08-05 Intel Corporation Perpendicular spin transfer torque memory (STTM) device with enhanced stability and method to form same
CN103258858A (zh) * 2013-04-22 2013-08-21 南京邮电大学 一种三材料异质栅结构的石墨烯纳米条带场效应管

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200625464A (en) * 2004-05-26 2006-07-16 Koninkl Philips Electronics Nv Electric device with vertical component
US20090008631A1 (en) * 2006-01-25 2009-01-08 Nxp B.V. Nanowire tunneling transistor
TW201110348A (en) * 2009-05-20 2011-03-16 Micron Technology Inc Vertically-oriented semiconductor selection device providing high drive current in cross-point array memory
TW201330268A (zh) * 2011-10-12 2013-07-16 Ibm 具有不對稱閘極的垂直電晶體

Also Published As

Publication number Publication date
EP3050115A4 (en) 2017-08-30
TW201727831A (zh) 2017-08-01
US9306063B2 (en) 2016-04-05
KR20160061967A (ko) 2016-06-01
US9871117B2 (en) 2018-01-16
WO2015047671A1 (en) 2015-04-02
TW201526163A (zh) 2015-07-01
US20160190282A1 (en) 2016-06-30
US20150091058A1 (en) 2015-04-02
CN105518867B (zh) 2020-02-21
EP3050115A1 (en) 2016-08-03
TWI620275B (zh) 2018-04-01
CN105518867A (zh) 2016-04-20

Similar Documents

Publication Publication Date Title
TWI562287B (en) Vertical transistor devices for embedded memory and logic technologies
GB2528196B (en) Multiple-qubit wave-activated controlled gate
GB201514057D0 (en) Logic chip including embedded mangetic tunneljunctions
GB201513901D0 (en) Logic chip including embedded magnetic tunnel juctions
EP2921963A4 (en) MEMORY RECYCLING METHOD AND DEVICE
EP2953134A4 (en) NON-VOLATILE MEMORY DEVICE
SG2013069489A (en) Nonvolatile semiconductor memory device
EP2966997A4 (en) ELECTRONIC DOOR FOR DOMESTIC ANIMALS
SG2013038641A (en) Gate valve
SG11201601737SA (en) Semiconductor storage device and memory system
HRP20181664T1 (hr) Rolo vrata
GB2529090B (en) Memory access control
HK1220569A1 (zh) 用於隨機接入的方法和設備
EP3088697A4 (en) DEVICE OF DISCHARGE VALVE TYPE
EP3035193A4 (en) Memory module access method and device
EP2992531A4 (en) MEMORY RATE
SG11201601627XA (en) Semiconductor storage device
SG11201506295SA (en) Nonvolatile semiconductor memory device and read method thereof
EP2985699A4 (en) MEMORY ACCESS AND STORAGE SYSTEM
GB2532667B (en) Memory management
HK1221820A1 (zh) 晶體管
EP2989275A4 (en) SYSTEM AND DEVICE FOR GENTLE CLOSURE
GB201315397D0 (en) Memory controller and memory access method
GB2530185B (en) Magnetic element for memory and logic
EP2899639A4 (en) NON-VOLATILE MEMORY AND ELECTRONIC DEVICE

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees