TWI562261B - Substrate position detecting apparatus, substrate processing apparatus using substrate position detecting apparatus, and deposition apparatus - Google Patents
Substrate position detecting apparatus, substrate processing apparatus using substrate position detecting apparatus, and deposition apparatusInfo
- Publication number
- TWI562261B TWI562261B TW102147365A TW102147365A TWI562261B TW I562261 B TWI562261 B TW I562261B TW 102147365 A TW102147365 A TW 102147365A TW 102147365 A TW102147365 A TW 102147365A TW I562261 B TWI562261 B TW I562261B
- Authority
- TW
- Taiwan
- Prior art keywords
- position detecting
- substrate
- substrate position
- detecting apparatus
- deposition
- Prior art date
Links
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
- C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
- H01L21/681—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment using optical controlling means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/01—Arrangements or apparatus for facilitating the optical investigation
- G01N21/15—Preventing contamination of the components of the optical system or obstruction of the light path
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012279911A JP6118102B2 (ja) | 2012-12-21 | 2012-12-21 | 基板位置検出装置及びこれを用いた基板処理装置、成膜装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201432836A TW201432836A (zh) | 2014-08-16 |
TWI562261B true TWI562261B (en) | 2016-12-11 |
Family
ID=50956044
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW102147365A TWI562261B (en) | 2012-12-21 | 2013-12-20 | Substrate position detecting apparatus, substrate processing apparatus using substrate position detecting apparatus, and deposition apparatus |
Country Status (5)
Country | Link |
---|---|
US (1) | US9404184B2 (zh) |
JP (1) | JP6118102B2 (zh) |
KR (1) | KR101685243B1 (zh) |
CN (1) | CN103887210B (zh) |
TW (1) | TWI562261B (zh) |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9416448B2 (en) * | 2008-08-29 | 2016-08-16 | Tokyo Electron Limited | Film deposition apparatus, substrate processing apparatus, film deposition method, and computer-readable storage medium for film deposition method |
JP5107185B2 (ja) | 2008-09-04 | 2012-12-26 | 東京エレクトロン株式会社 | 成膜装置、基板処理装置、成膜方法及びこの成膜方法を実行させるためのプログラムを記録した記録媒体 |
US9297072B2 (en) | 2008-12-01 | 2016-03-29 | Tokyo Electron Limited | Film deposition apparatus |
JP5640894B2 (ja) * | 2011-05-26 | 2014-12-17 | 東京エレクトロン株式会社 | 温度測定装置、温度測定方法、記憶媒体及び熱処理装置 |
JP6029250B2 (ja) * | 2013-03-28 | 2016-11-24 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法及びプログラム |
US9111979B2 (en) * | 2013-05-16 | 2015-08-18 | Kevin P Fairbairn | System and method for real time positioning of a substrate in a vacuum processing system |
TWI520258B (zh) * | 2013-09-27 | 2016-02-01 | 華亞科技股份有限公司 | 起吊裝置及自動化搬運系統 |
JP6262115B2 (ja) | 2014-02-10 | 2018-01-17 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
RU2736197C2 (ru) * | 2015-01-20 | 2020-11-12 | БАСФ Коатингс ГмбХ | Способ изготовления гибких органических-неорганических слоистых материалов |
CN106158694A (zh) * | 2015-04-10 | 2016-11-23 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 检测装置及半导体加工设备 |
KR102109375B1 (ko) * | 2015-10-02 | 2020-05-12 | 주식회사 원익아이피에스 | 기판 얼라인 장치 |
JP6548586B2 (ja) | 2016-02-03 | 2019-07-24 | 東京エレクトロン株式会社 | 成膜方法 |
JP6985933B2 (ja) * | 2016-03-21 | 2021-12-22 | パーシモン テクノロジーズ コーポレイションPersimmon Technologies, Corp. | 隔離された光学エンコーダを備えるロボット駆動装置 |
JP6537992B2 (ja) * | 2016-03-30 | 2019-07-03 | 東京エレクトロン株式会社 | 基板処理装置、基板処理装置の制御方法、及び基板処理システム |
TWI596658B (zh) * | 2016-09-13 | 2017-08-21 | 漢民科技股份有限公司 | 防護裝置及半導體製程機台 |
JP6667412B2 (ja) * | 2016-09-30 | 2020-03-18 | 東京エレクトロン株式会社 | 基板処理装置 |
JP2018057246A (ja) | 2016-09-30 | 2018-04-05 | キヤノン株式会社 | 電子機器 |
JP6733516B2 (ja) | 2016-11-21 | 2020-08-05 | 東京エレクトロン株式会社 | 半導体装置の製造方法 |
JP6883436B2 (ja) * | 2017-01-31 | 2021-06-09 | アルファーデザイン株式会社 | 塗布装置、塗布方法、プログラム |
JP7029914B2 (ja) * | 2017-09-25 | 2022-03-04 | 東京エレクトロン株式会社 | 基板処理装置 |
JP7145648B2 (ja) * | 2018-05-22 | 2022-10-03 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
KR102251936B1 (ko) * | 2018-05-24 | 2021-05-14 | (주)쎄미시스코 | 챔버에서의 결함 검사 시스템 및 그 방법 |
JP7246247B2 (ja) * | 2019-05-15 | 2023-03-27 | 東京エレクトロン株式会社 | 基板処理装置及び監視方法 |
CN112309889A (zh) * | 2019-08-02 | 2021-02-02 | 合肥晶合集成电路股份有限公司 | 一种基板检测装置及其检测方法 |
NL2026895B1 (en) * | 2020-11-13 | 2022-06-30 | Levitech B V | Multi-chamber apparatus and method for ALD |
JP7344237B2 (ja) * | 2021-02-10 | 2023-09-13 | ヤマハ発動機株式会社 | 無人搬送車 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030219914A1 (en) * | 2002-01-29 | 2003-11-27 | Recif, S. A. | Apparatus and process for identification of characters inscribed on a semiconductor wafer containing an orientation mark |
US20080192113A1 (en) * | 2001-05-28 | 2008-08-14 | Lynx Engineering Consultants Pty Ltd. | Automated wheel slide detector |
TW201028496A (en) * | 2008-09-04 | 2010-08-01 | Tokyo Electron Ltd | Film deposition apparatus, substrate processing apparatus, film deposition method, and computer-readable storage medium |
TW201036081A (en) * | 2008-11-19 | 2010-10-01 | Tokyo Electron Ltd | Substrate position detection apparatus, substrate position detection method, film deposition apparatus, film deposition method, and a computer readable storage medium |
TW201234515A (en) * | 2010-09-28 | 2012-08-16 | Tokyo Electron Ltd | Substrate position detection apparatus, film deposition apparatus equipped with the same, and substrate position detection method |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2568466B2 (ja) * | 1991-11-01 | 1997-01-08 | 富士電子工業株式会社 | プラズマcvd装置 |
JPH09309083A (ja) * | 1996-05-27 | 1997-12-02 | Kokusai Electric Co Ltd | 搬送装置 |
JP2002162258A (ja) * | 2000-11-27 | 2002-06-07 | Olympus Optical Co Ltd | 光学式エンコーダ |
JP4756766B2 (ja) * | 2001-04-23 | 2011-08-24 | 不二越機械工業株式会社 | ワークの供給装置 |
CN101665919A (zh) * | 2008-09-04 | 2010-03-10 | 东京毅力科创株式会社 | 成膜装置、基板处理装置、成膜方法 |
CN102482760B (zh) * | 2009-09-15 | 2014-07-02 | 夏普株式会社 | 蒸镀方法和蒸镀装置 |
WO2011151996A1 (ja) * | 2010-06-01 | 2011-12-08 | パナソニック株式会社 | プラズマ処理装置及びプラズマ処理方法 |
-
2012
- 2012-12-21 JP JP2012279911A patent/JP6118102B2/ja active Active
-
2013
- 2013-12-12 US US14/104,049 patent/US9404184B2/en active Active
- 2013-12-18 KR KR1020130158345A patent/KR101685243B1/ko active IP Right Grant
- 2013-12-20 CN CN201310714507.9A patent/CN103887210B/zh active Active
- 2013-12-20 TW TW102147365A patent/TWI562261B/zh active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080192113A1 (en) * | 2001-05-28 | 2008-08-14 | Lynx Engineering Consultants Pty Ltd. | Automated wheel slide detector |
US20030219914A1 (en) * | 2002-01-29 | 2003-11-27 | Recif, S. A. | Apparatus and process for identification of characters inscribed on a semiconductor wafer containing an orientation mark |
TW201028496A (en) * | 2008-09-04 | 2010-08-01 | Tokyo Electron Ltd | Film deposition apparatus, substrate processing apparatus, film deposition method, and computer-readable storage medium |
TW201036081A (en) * | 2008-11-19 | 2010-10-01 | Tokyo Electron Ltd | Substrate position detection apparatus, substrate position detection method, film deposition apparatus, film deposition method, and a computer readable storage medium |
TW201234515A (en) * | 2010-09-28 | 2012-08-16 | Tokyo Electron Ltd | Substrate position detection apparatus, film deposition apparatus equipped with the same, and substrate position detection method |
Also Published As
Publication number | Publication date |
---|---|
KR20140081705A (ko) | 2014-07-01 |
JP2014123673A (ja) | 2014-07-03 |
JP6118102B2 (ja) | 2017-04-19 |
CN103887210B (zh) | 2017-06-30 |
US20140174351A1 (en) | 2014-06-26 |
KR101685243B1 (ko) | 2016-12-09 |
TW201432836A (zh) | 2014-08-16 |
US9404184B2 (en) | 2016-08-02 |
CN103887210A (zh) | 2014-06-25 |
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