TWI560996B - Integrated circuit and self-biased rc oscillator and ramp generator circuit - Google Patents

Integrated circuit and self-biased rc oscillator and ramp generator circuit

Info

Publication number
TWI560996B
TWI560996B TW104126714A TW104126714A TWI560996B TW I560996 B TWI560996 B TW I560996B TW 104126714 A TW104126714 A TW 104126714A TW 104126714 A TW104126714 A TW 104126714A TW I560996 B TWI560996 B TW I560996B
Authority
TW
Taiwan
Prior art keywords
oscillator
biased
self
ramp generator
circuit
Prior art date
Application number
TW104126714A
Other languages
English (en)
Other versions
TW201611511A (zh
Inventor
J Holzmann Peter
Original Assignee
Nuvoton Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nuvoton Technology Corp filed Critical Nuvoton Technology Corp
Publication of TW201611511A publication Critical patent/TW201611511A/zh
Application granted granted Critical
Publication of TWI560996B publication Critical patent/TWI560996B/zh

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/023Generators characterised by the type of circuit or by the means used for producing pulses by the use of differential amplifiers or comparators, with internal or external positive feedback
    • H03K3/0231Astable circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/01Details
    • H03K3/011Modifications of generator to compensate for variations in physical values, e.g. voltage, temperature
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/53Generators characterised by the type of circuit or by the means used for producing pulses by the use of an energy-accumulating element discharged through the load by a switching device controlled by an external signal and not incorporating positive feedback
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K4/00Generating pulses having essentially a finite slope or stepped portions
    • H03K4/06Generating pulses having essentially a finite slope or stepped portions having triangular shape
TW104126714A 2014-09-15 2015-08-17 Integrated circuit and self-biased rc oscillator and ramp generator circuit TWI560996B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US14/487,090 US9287823B1 (en) 2014-09-15 2014-09-15 Method and apparatus of a self-biased RC oscillator and ramp generator

Publications (2)

Publication Number Publication Date
TW201611511A TW201611511A (zh) 2016-03-16
TWI560996B true TWI560996B (en) 2016-12-01

Family

ID=55450259

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104126714A TWI560996B (en) 2014-09-15 2015-08-17 Integrated circuit and self-biased rc oscillator and ramp generator circuit

Country Status (4)

Country Link
US (1) US9287823B1 (zh)
KR (2) KR20160031959A (zh)
CN (1) CN105429612B (zh)
TW (1) TWI560996B (zh)

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Publication number Priority date Publication date Assignee Title
CN105958943B (zh) * 2016-04-21 2018-12-04 新茂国际科技股份有限公司 弛张振荡器
CN106026616A (zh) * 2016-06-15 2016-10-12 中山大学 一种无电容结构的自适应斜坡补偿电路
TWI616060B (zh) * 2016-08-04 2018-02-21 松翰科技股份有限公司 時脈信號產生裝置及其時脈信號產生方法
US10044346B2 (en) * 2016-09-09 2018-08-07 Nuvoton Technology Corporation Low-power slew rate detector for edge rate control of an output power stage
US10664031B2 (en) * 2016-11-26 2020-05-26 Arm Limited Monitoring circuit and method
US10425064B2 (en) * 2016-12-08 2019-09-24 Micron Technology, Inc. Apparatus and method for a PVT independent RC delay
US10483985B2 (en) 2017-01-23 2019-11-19 Samsung Electronics Co., Ltd. Oscillator using supply regulation loop and operating method thereof
IT201700014710A1 (it) * 2017-02-10 2018-08-10 St Microelectronics Srl Generatore di tensione a forma d'onda triangolare e relativo circuito amplificatore in classe d
IT201700021392A1 (it) * 2017-02-24 2018-08-24 St Microelectronics Srl Circuito di pilotaggio, apparecchiatura ad ultrasuoni e procedimento corrispondenti
US10571516B2 (en) * 2017-08-30 2020-02-25 Arm Limited CMOS process skew sensor
EP3490147B1 (en) 2017-11-28 2024-04-10 ams AG Relaxation oscillator with an aging effect reduction technique
CN109257032A (zh) * 2018-07-26 2019-01-22 上海华虹宏力半导体制造有限公司 低频振荡器
KR102488110B1 (ko) * 2018-09-21 2023-01-13 에스케이하이닉스 주식회사 아날로그-디지털 변환 회로 및 이를 포함하는 씨모스 이미지 센서
US10727827B2 (en) * 2018-12-19 2020-07-28 Texas Instruments Incorporated Self-biased gate controlled switching circuit
CN109672428B (zh) * 2018-12-19 2023-07-07 上海琪埔维半导体有限公司 一种张弛振荡器
TWI673952B (zh) * 2018-12-28 2019-10-01 大陸商北京集創北方科技股份有限公司 Rc振盪器
CN109995325B (zh) * 2018-12-29 2023-05-30 成都锐成芯微科技股份有限公司 一种低噪声rc振荡器
CN111294701B (zh) * 2018-12-29 2021-11-02 展讯通信(深圳)有限公司 信号发生电路及音频处理装置
EP3826179A1 (en) * 2019-11-22 2021-05-26 Nexperia B.V. Schmitt trigger voltage comparator
KR20210092987A (ko) * 2020-01-17 2021-07-27 삼성전기주식회사 잡음 및 지터에 둔감한 발진회로
TWI756855B (zh) * 2020-09-29 2022-03-01 北京歐錸德微電子技術有限公司 Rc振盪器電路及資訊處理裝置
CN112491397A (zh) * 2020-12-07 2021-03-12 成都锐成芯微科技股份有限公司 一种多频点rc振荡器
CN114244320B (zh) * 2022-02-25 2022-05-24 杭州万高科技股份有限公司 张驰振荡电路
CN116527019B (zh) * 2023-07-03 2023-12-05 成都芯翼科技有限公司 一种片内振荡器电路
KR102649439B1 (ko) * 2024-02-01 2024-03-20 주식회사 아크칩스 온도에 무관한 발진신호를 출력하는 rc발진기

Citations (1)

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Publication number Priority date Publication date Assignee Title
US20070109062A1 (en) * 2005-11-15 2007-05-17 Analog Devices, Inc. Timer circuits and method

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US5418502A (en) * 1994-03-03 1995-05-23 Micro Linear Corporation Micro power R-C relaxation oscillator
DE69514090T2 (de) * 1995-03-31 2000-05-25 St Microelectronics Srl Oszillatorschaltung mit einer versorgungsspannungsunabhängigen Oszillatorfrequenz
ATE550830T1 (de) * 2002-12-17 2012-04-15 Eliposki Remote Ltd L L C Temperaturkompensierter r-c oszillator
US7116181B2 (en) * 2004-12-21 2006-10-03 Actel Corporation Voltage- and temperature-compensated RC oscillator circuit
US9385694B2 (en) 2011-12-20 2016-07-05 Conexant Systems, Inc. Low-power programmable oscillator and ramp generator

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070109062A1 (en) * 2005-11-15 2007-05-17 Analog Devices, Inc. Timer circuits and method

Also Published As

Publication number Publication date
CN105429612B (zh) 2018-03-30
KR101812931B1 (ko) 2017-12-27
CN105429612A (zh) 2016-03-23
KR20170108924A (ko) 2017-09-27
KR20160031959A (ko) 2016-03-23
TW201611511A (zh) 2016-03-16
US9287823B1 (en) 2016-03-15
US20160079917A1 (en) 2016-03-17

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