TWI560318B - - Google Patents

Info

Publication number
TWI560318B
TWI560318B TW104113168A TW104113168A TWI560318B TW I560318 B TWI560318 B TW I560318B TW 104113168 A TW104113168 A TW 104113168A TW 104113168 A TW104113168 A TW 104113168A TW I560318 B TWI560318 B TW I560318B
Authority
TW
Taiwan
Application number
TW104113168A
Other versions
TW201606135A (zh
Inventor
Makoto Chakuno
Shinichirou Fuchigami
Yusuke Kito
Yoshihide Kosano
Original Assignee
Panasonic Ip Man Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Ip Man Co Ltd filed Critical Panasonic Ip Man Co Ltd
Publication of TW201606135A publication Critical patent/TW201606135A/zh
Application granted granted Critical
Publication of TWI560318B publication Critical patent/TWI560318B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/18—Acidic compositions for etching copper or alloys thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/26—Acidic compositions for etching refractory metals

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)
TW104113168A 2014-04-25 2015-04-24 含有鉬與銅之多層膜用蝕刻液與蝕刻濃縮液及蝕刻方法 TW201606135A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014091779A JP5866566B2 (ja) 2014-04-25 2014-04-25 モリブデンと銅を含む多層膜用エッチング液とエッチング濃縮液およびエッチング方法

Publications (2)

Publication Number Publication Date
TW201606135A TW201606135A (zh) 2016-02-16
TWI560318B true TWI560318B (zh) 2016-12-01

Family

ID=54332108

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104113168A TW201606135A (zh) 2014-04-25 2015-04-24 含有鉬與銅之多層膜用蝕刻液與蝕刻濃縮液及蝕刻方法

Country Status (4)

Country Link
JP (1) JP5866566B2 (zh)
CN (1) CN106255777B (zh)
TW (1) TW201606135A (zh)
WO (1) WO2015162934A1 (zh)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6494254B2 (ja) * 2014-11-18 2019-04-03 関東化學株式会社 銅、モリブデン金属積層膜エッチング液組成物、該組成物を用いたエッチング方法および該組成物の寿命を延ばす方法
TWI706056B (zh) * 2015-12-21 2020-10-01 日商三菱瓦斯化學股份有限公司 用來蝕刻包含銅及鉬之多層膜的液體組成物、利用此液體組成物的蝕刻方法與顯示器件之製造方法
TWI618817B (zh) * 2015-12-29 2018-03-21 Daxin Materials Corporation 蝕刻液組成物及應用其之蝕刻方法
CN105862040A (zh) * 2016-06-20 2016-08-17 深圳市华星光电技术有限公司 铜蚀刻液添加剂以及铜蚀刻液的生成方法
WO2018047210A1 (ja) * 2016-09-09 2018-03-15 パナソニックＩｐマネジメント株式会社 多層膜用エッチング液とエッチング濃縮液およびエッチング方法
WO2018116991A1 (ja) * 2016-12-21 2018-06-28 東洋製罐グループホールディングス株式会社 ポリオキサレート分解方法
CN107012465B (zh) * 2017-03-28 2019-09-03 江苏和达电子科技有限公司 一种铜蚀刻液及其应用
KR20190027019A (ko) * 2017-09-04 2019-03-14 삼성디스플레이 주식회사 식각액 조성물 및 이를 이용한 금속 패턴과 박막 트랜지스터 기판 제조 방법
WO2019180915A1 (ja) * 2018-03-23 2019-09-26 パナソニックＩｐマネジメント株式会社 銅厚膜用エッチング液
CN109082663A (zh) * 2018-07-19 2018-12-25 深圳市华星光电半导体显示技术有限公司 一种铜/钼蚀刻液组合物及其应用
CN110219003B (zh) * 2019-07-01 2021-08-24 江苏和达电子科技有限公司 用于蚀刻由铜层及钼层构成的金属层的蚀刻液及其应用
CN110923713B (zh) * 2019-12-31 2020-12-08 成都中电熊猫显示科技有限公司 一种用于铜钼及合金膜的刻蚀液及其制备方法
CN111809182A (zh) * 2020-07-08 2020-10-23 江苏和达电子科技有限公司 一种用于铜/钼（铌）/igzo膜层的刻蚀液及其制备方法和应用
CN116240547B (zh) * 2022-12-25 2024-03-12 湖北兴福电子材料股份有限公司 一种铜蚀刻液及其制备方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI231275B (en) * 2002-12-12 2005-04-21 Lg Philips Lcd Co Ltd Etching solution for multiple layer of copper and molybdenum and etching method using the same
TWI378989B (en) * 2006-09-01 2012-12-11 Taiwan Tft Lcd Ass Etchant for patterning composite layer and method of fabricating thin film transistor using the same
TW201311933A (zh) * 2011-07-04 2013-03-16 Mitsubishi Gas Chemical Co 銅或以銅為主成分之化合物之蝕刻液
TW201311868A (zh) * 2011-07-26 2013-03-16 Mitsubishi Gas Chemical Co 銅／鉬系多層薄膜用蝕刻液
TWI405874B (zh) * 2010-02-15 2013-08-21 Mitsubishi Gas Chemical Co 具有銅層及鉬層之多層薄膜用蝕刻液

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102102206A (zh) * 2009-12-18 2011-06-22 鑫林科技股份有限公司 金属蚀刻液组合物及其蚀刻方法
JP5750686B2 (ja) * 2011-10-14 2015-07-22 メック株式会社 プリント配線板の製造方法及びこれに用いる表面処理剤

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI231275B (en) * 2002-12-12 2005-04-21 Lg Philips Lcd Co Ltd Etching solution for multiple layer of copper and molybdenum and etching method using the same
TWI378989B (en) * 2006-09-01 2012-12-11 Taiwan Tft Lcd Ass Etchant for patterning composite layer and method of fabricating thin film transistor using the same
TWI405874B (zh) * 2010-02-15 2013-08-21 Mitsubishi Gas Chemical Co 具有銅層及鉬層之多層薄膜用蝕刻液
TW201311933A (zh) * 2011-07-04 2013-03-16 Mitsubishi Gas Chemical Co 銅或以銅為主成分之化合物之蝕刻液
TW201311868A (zh) * 2011-07-26 2013-03-16 Mitsubishi Gas Chemical Co 銅／鉬系多層薄膜用蝕刻液

Also Published As

Publication number Publication date
WO2015162934A1 (ja) 2015-10-29
JP2015209568A (ja) 2015-11-24
TW201606135A (zh) 2016-02-16
CN106255777B (zh) 2018-03-20
CN106255777A (zh) 2016-12-21
JP5866566B2 (ja) 2016-02-17

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