TWI557173B - Block copolymer - Google Patents

Block copolymer Download PDF

Info

Publication number
TWI557173B
TWI557173B TW103142956A TW103142956A TWI557173B TW I557173 B TWI557173 B TW I557173B TW 103142956 A TW103142956 A TW 103142956A TW 103142956 A TW103142956 A TW 103142956A TW I557173 B TWI557173 B TW I557173B
Authority
TW
Taiwan
Prior art keywords
block copolymer
block
group
chain
forming
Prior art date
Application number
TW103142956A
Other languages
Chinese (zh)
Other versions
TW201534652A (en
Inventor
朴魯振
金廷根
李濟權
尹聖琇
Original Assignee
Lg化學股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lg化學股份有限公司 filed Critical Lg化學股份有限公司
Publication of TW201534652A publication Critical patent/TW201534652A/en
Application granted granted Critical
Publication of TWI557173B publication Critical patent/TWI557173B/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F297/00Macromolecular compounds obtained by successively polymerising different monomer systems using a catalyst of the ionic or coordination type without deactivating the intermediate polymer
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F293/00Macromolecular compounds obtained by polymerisation on to a macromolecule having groups capable of inducing the formation of new polymer chains bound exclusively at one or both ends of the starting macromolecule
    • C08F293/005Macromolecular compounds obtained by polymerisation on to a macromolecule having groups capable of inducing the formation of new polymer chains bound exclusively at one or both ends of the starting macromolecule using free radical "living" or "controlled" polymerisation, e.g. using a complexing agent
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C217/00Compounds containing amino and etherified hydroxy groups bound to the same carbon skeleton
    • C07C217/78Compounds containing amino and etherified hydroxy groups bound to the same carbon skeleton having amino groups and etherified hydroxy groups bound to carbon atoms of six-membered aromatic rings of the same carbon skeleton
    • C07C217/80Compounds containing amino and etherified hydroxy groups bound to the same carbon skeleton having amino groups and etherified hydroxy groups bound to carbon atoms of six-membered aromatic rings of the same carbon skeleton having amino groups and etherified hydroxy groups bound to carbon atoms of non-condensed six-membered aromatic rings
    • C07C217/82Compounds containing amino and etherified hydroxy groups bound to the same carbon skeleton having amino groups and etherified hydroxy groups bound to carbon atoms of six-membered aromatic rings of the same carbon skeleton having amino groups and etherified hydroxy groups bound to carbon atoms of non-condensed six-membered aromatic rings of the same non-condensed six-membered aromatic ring
    • C07C217/84Compounds containing amino and etherified hydroxy groups bound to the same carbon skeleton having amino groups and etherified hydroxy groups bound to carbon atoms of six-membered aromatic rings of the same carbon skeleton having amino groups and etherified hydroxy groups bound to carbon atoms of non-condensed six-membered aromatic rings of the same non-condensed six-membered aromatic ring the oxygen atom of at least one of the etherified hydroxy groups being further bound to an acyclic carbon atom
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C35/00Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a ring other than a six-membered aromatic ring
    • C07C35/48Halogenated derivatives
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C43/00Ethers; Compounds having groups, groups or groups
    • C07C43/02Ethers
    • C07C43/20Ethers having an ether-oxygen atom bound to a carbon atom of a six-membered aromatic ring
    • C07C43/215Ethers having an ether-oxygen atom bound to a carbon atom of a six-membered aromatic ring having unsaturation outside the six-membered aromatic rings
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C43/00Ethers; Compounds having groups, groups or groups
    • C07C43/02Ethers
    • C07C43/20Ethers having an ether-oxygen atom bound to a carbon atom of a six-membered aromatic ring
    • C07C43/225Ethers having an ether-oxygen atom bound to a carbon atom of a six-membered aromatic ring containing halogen
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07DHETEROCYCLIC COMPOUNDS
    • C07D209/00Heterocyclic compounds containing five-membered rings, condensed with other rings, with one nitrogen atom as the only ring hetero atom
    • C07D209/02Heterocyclic compounds containing five-membered rings, condensed with other rings, with one nitrogen atom as the only ring hetero atom condensed with one carbocyclic ring
    • C07D209/44Iso-indoles; Hydrogenated iso-indoles
    • C07D209/48Iso-indoles; Hydrogenated iso-indoles with oxygen atoms in positions 1 and 3, e.g. phthalimide
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07FACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02Silicon compounds
    • C07F7/08Compounds having one or more C—Si linkages
    • C07F7/18Compounds having one or more C—Si linkages as well as one or more C—O—Si linkages
    • C07F7/1804Compounds having Si-O-C linkages
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F12/00Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F12/02Monomers containing only one unsaturated aliphatic radical
    • C08F12/04Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F12/14Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing heteroatoms
    • C08F12/16Halogens
    • C08F12/20Fluorine
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F12/00Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F12/02Monomers containing only one unsaturated aliphatic radical
    • C08F12/04Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F12/14Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing heteroatoms
    • C08F12/22Oxygen
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F12/00Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F12/02Monomers containing only one unsaturated aliphatic radical
    • C08F12/04Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F12/14Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing heteroatoms
    • C08F12/26Nitrogen
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F12/00Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F12/02Monomers containing only one unsaturated aliphatic radical
    • C08F12/32Monomers containing only one unsaturated aliphatic radical containing two or more rings
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02Monomers containing only one unsaturated aliphatic radical
    • C08F212/04Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F212/06Hydrocarbons
    • C08F212/08Styrene
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02Monomers containing only one unsaturated aliphatic radical
    • C08F212/04Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F212/06Hydrocarbons
    • C08F212/12Monomers containing a branched unsaturated aliphatic radical or a ring substituted by an alkyl radical
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02Monomers containing only one unsaturated aliphatic radical
    • C08F212/04Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F212/14Monomers containing only one unsaturated aliphatic radical containing one ring substituted by heteroatoms or groups containing heteroatoms
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02Monomers containing only one unsaturated aliphatic radical
    • C08F212/04Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F212/14Monomers containing only one unsaturated aliphatic radical containing one ring substituted by heteroatoms or groups containing heteroatoms
    • C08F212/16Halogens
    • C08F212/20Fluorine
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02Monomers containing only one unsaturated aliphatic radical
    • C08F212/04Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F212/14Monomers containing only one unsaturated aliphatic radical containing one ring substituted by heteroatoms or groups containing heteroatoms
    • C08F212/22Oxygen
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02Monomers containing only one unsaturated aliphatic radical
    • C08F212/04Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F212/14Monomers containing only one unsaturated aliphatic radical containing one ring substituted by heteroatoms or groups containing heteroatoms
    • C08F212/26Nitrogen
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02Monomers containing only one unsaturated aliphatic radical
    • C08F212/32Monomers containing only one unsaturated aliphatic radical containing two or more rings
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F216/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an alcohol, ether, aldehydo, ketonic, acetal or ketal radical
    • C08F216/12Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an alcohol, ether, aldehydo, ketonic, acetal or ketal radical by an ether radical
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10Esters
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10Esters
    • C08F220/26Esters containing oxygen in addition to the carboxy oxygen
    • C08F220/30Esters containing oxygen in addition to the carboxy oxygen containing aromatic rings in the alcohol moiety
    • C08F220/301Esters containing oxygen in addition to the carboxy oxygen containing aromatic rings in the alcohol moiety and one oxygen in the alcohol moiety
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08JWORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J5/00Manufacture of articles or shaped materials containing macromolecular substances
    • C08J5/18Manufacture of films or sheets
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08JWORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J7/00Chemical treatment or coating of shaped articles made of macromolecular substances
    • C08J7/04Coating
    • C08J7/0427Coating with only one layer of a composition containing a polymer binder
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08JWORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J7/00Chemical treatment or coating of shaped articles made of macromolecular substances
    • C08J7/12Chemical modification
    • C08J7/123Treatment by wave energy or particle radiation
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08JWORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J7/00Chemical treatment or coating of shaped articles made of macromolecular substances
    • C08J7/12Chemical modification
    • C08J7/14Chemical modification with acids, their salts or anhydrides
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D153/00Coating compositions based on block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bonds; Coating compositions based on derivatives of such polymers
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16Coating processes; Apparatus therefor
    • G03F7/162Coating on a rotating support, e.g. using a whirler or a spinner
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00388Etch mask forming
    • B81C1/00428Etch mask forming processes not provided for in groups B81C1/00396 - B81C1/0042
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00523Etching material
    • B81C1/00531Dry etching
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00Manufacture or treatment of microstructural devices or systems
    • B81C2201/01Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0147Film patterning
    • B81C2201/0149Forming nanoscale microstructures using auto-arranging or self-assembling material
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00Manufacture or treatment of nanostructures
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C2601/00Systems containing only non-condensed rings
    • C07C2601/12Systems containing only non-condensed rings with a six-membered ring
    • C07C2601/16Systems containing only non-condensed rings with a six-membered ring the ring being unsaturated
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10Esters
    • C08F220/26Esters containing oxygen in addition to the carboxy oxygen
    • C08F220/30Esters containing oxygen in addition to the carboxy oxygen containing aromatic rings in the alcohol moiety
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F2438/00Living radical polymerisation
    • C08F2438/03Use of a di- or tri-thiocarbonylthio compound, e.g. di- or tri-thioester, di- or tri-thiocarbamate, or a xanthate as chain transfer agent, e.g . Reversible Addition Fragmentation chain Transfer [RAFT] or Macromolecular Design via Interchange of Xanthates [MADIX]
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08JWORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2353/00Characterised by the use of block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bonds; Derivatives of such polymers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Emergency Medicine (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Nanotechnology (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Graft Or Block Polymers (AREA)

Description

嵌段共聚物 Block copolymer

本申請案係關於嵌段共聚物。 This application is directed to block copolymers.

嵌段共聚物具有化學結構彼此不同的聚合物次單元藉共價鍵彼此連接之分子結構。嵌段共聚物能夠經由相分離而形成週期性排列的結構,如球、圓筒或積層。藉嵌段共聚物之自組裝而形成之結構的區域尺寸可調整於寬範圍內,並可製成各種結構形狀。因此,彼等可用於藉蝕刻而形成圖案的方法、各種磁性記錄介質或新一代奈米裝置(如金屬點、量子點或奈米線)、高密度磁性儲存介質等。 The block copolymer has a molecular structure in which polymer subunits having different chemical structures are linked to each other by covalent bonds. The block copolymer is capable of forming a periodically aligned structure such as a sphere, a cylinder or a laminate via phase separation. The size of the structure formed by the self-assembly of the block copolymer can be adjusted within a wide range and can be made into various structural shapes. Therefore, they can be used for a method of forming a pattern by etching, various magnetic recording media or a new generation of nanodevices (such as metal dots, quantum dots or nanowires), high-density magnetic storage media, and the like.

本申請案提供嵌段共聚物和其應用。 This application provides block copolymers and their use.

除非另外界定,否則文中所用“烷基”是指具1至20,1至16,1至12,1至8,或1至4個碳原子的烷基。烷基可具有直鏈、支鏈或環狀結構,且可任意地經至少一個取代基取代。 "Alkyl" as used herein, unless otherwise defined, refers to an alkyl group having from 1 to 20, 1 to 16, 1 to 12, 1 to 8, or 1 to 4 carbon atoms. The alkyl group may have a linear, branched or cyclic structure, and may be optionally substituted with at least one substituent.

除非另外界定,否則文中所用“烷氧基”是指具1至20,1至16,1至12,1至8,或1至4個碳原子的烷基。烷氧基可具有直鏈、支鏈或環狀結構,且可任意地經至少一個取代基取代。 "Alkoxy" as used herein, unless otherwise defined, refers to an alkyl group having from 1 to 20, 1 to 16, 1 to 12, 1 to 8, or 1 to 4 carbon atoms. The alkoxy group may have a linear, branched or cyclic structure, and may be optionally substituted with at least one substituent.

除非另外界定,否則文中所用“烯基或炔基”是指具2至20,2至16,2至12,2至8,或2至4個碳原子的烷基。烯基或炔基可具有直鏈、支鏈或環狀結構,且可任意地經至少一個取代基取代。 "Alkenyl or alkynyl" as used herein, unless otherwise defined, refers to an alkyl group having from 2 to 20, 2 to 16, 2 to 12, 2 to 8, or 2 to 4 carbon atoms. The alkenyl or alkynyl group may have a linear, branched or cyclic structure and may be optionally substituted with at least one substituent.

除非另外界定,否則文中所用“伸烷基”是指具1至20,1至16,1至12,1至8,或1至4個碳原子的伸烷基。伸烷基可具有直鏈、支鏈或環狀結構,且可任意地經至少一個取代基取代。 "Alkylalkyl" as used herein, unless otherwise defined, refers to an alkylene group having from 1 to 20, 1 to 16, 1 to 12, 1 to 8, or 1 to 4 carbon atoms. The alkylene group may have a linear, branched or cyclic structure and may be optionally substituted with at least one substituent.

除非另外界定,否則文中所用“伸烯基或伸炔基”是指具2至20,2至16,2至12,2至8,或2至4個碳原子的伸烯基或伸炔基。伸烯基或伸炔基可具有直鏈、支鏈或環狀結構,且可任意地經至少一個取代基取代。 "Alkenyl or alkynyl" as used herein, unless otherwise defined, refers to an alkenyl or alkynyl group having from 2 to 20, 2 to 16, 2 to 12, 2 to 8, or 2 to 4 carbon atoms. . The alkenyl group or the alkynyl group may have a linear, branched or cyclic structure and may be optionally substituted with at least one substituent.

除非另外界定,否則文中所用“芳基或伸芳基”是指自包括一個苯環結構的化合物,或包括其中至少兩個苯環以共享的一或兩個碳原子或藉任意的連接基連接 之結構的化合物,或此化合物之衍生物,衍生之單價或二價取代基。除非另外界定,否則芳基或伸芳基可為具6至30,6至25,6至21,6至18,或6至13個碳原子的芳基。 "Aryl or extended aryl" as used herein, unless otherwise defined, refers to a compound comprising a benzene ring structure, or includes at least two benzene rings bonded by one or two carbon atoms or by any linking group. A compound of the structure, or a derivative of the compound, derived from a monovalent or divalent substituent. Unless otherwise defined, an aryl or an aryl group can be an aryl group having 6 to 30, 6 to 25, 6 to 21, 6 to 18, or 6 to 13 carbon atoms.

文中所用“芳族結構”是指芳基或伸芳基。 As used herein, "aromatic structure" means an aryl or an aryl group.

除非另外界定,否則文中所用“脂環族結構”是指非芳環結構的環狀烴結構。除非另外界定,否則脂環族結構可為具3至30,3至25,3至21,3至18,或3至13個碳原子的結構。 Unless otherwise defined, "alicyclic structure" as used herein refers to a cyclic hydrocarbon structure that is not aromatic ring structure. Unless otherwise defined, the alicyclic structure may be a structure having 3 to 30, 3 to 25, 3 to 21, 3 to 18, or 3 to 13 carbon atoms.

文中所用“單鍵”是指在相關位置沒有原子的情況。例如,“A-B-C”所示結構中的“B”是單鍵的情況,意謂“B”位置沒有原子並因此而使得“A-C”所示結構係由“A”直接連接至“C”而形成。 As used herein, "single bond" refers to the absence of an atom at the relevant position. For example, the case where "B" in the structure shown by "ABC" is a single bond means that the "B" position has no atom and thus the structure shown by "AC" is directly connected to "C" by "A". .

可任意地取代烷基、烯基、炔基、伸烷基、伸烯基、伸炔基、烷氧基、芳基、伸芳基、鏈、芳族結構等之取代基可為羥基、鹵原子、羧基、環氧丙基、丙烯醯基、甲基丙烯醯基、丙烯醯氧基、甲基丙烯醯氧基、巰基、烷基、烯基、炔基、伸烷基、伸烯基、伸炔基、烷氧基或芳基,但不限於此。 The substituent which may be optionally substituted for an alkyl group, an alkenyl group, an alkynyl group, an alkylene group, an alkenyl group, an alkynyl group, an alkoxy group, an aryl group, an aryl group, a chain, an aromatic structure or the like may be a hydroxyl group or a halogen. Atom, carboxyl group, epoxypropyl group, propylene fluorenyl group, methacryl fluorenyl group, acryloxy group, methacryloxy group, fluorenyl group, alkyl group, alkenyl group, alkynyl group, alkylene group, alkenyl group, An alkynyl group, an alkoxy group or an aryl group, but is not limited thereto.

本申請案之例示嵌段共聚物可包括下式1所示嵌段。 An exemplary block copolymer of the present application may include a block represented by the following formula 1.

式1中,X2是單鍵、氧原子、硫原子、-S(=O)2-、伸烷基、伸烯基、伸炔基,R1至R5各自獨立地為氫、具1至8個碳原子的烷基、或具9或更多個成鏈原子的直鏈,且R1至R5中之至少一者係具9或更多個成鏈原子的直鏈。 In Formula 1, X 2 is a single bond, an oxygen atom, a sulfur atom, -S(=O) 2 -, an alkylene group, an alkenyl group, an alkynyl group, and R 1 to R 5 are each independently hydrogen, and have 1 An alkyl group of 8 carbon atoms, or a linear chain having 9 or more chain-forming atoms, and at least one of R 1 to R 5 is a linear chain of 9 or more chain-forming atoms.

一個具體實施例中,式1的X2可為單鍵或氧原子;或可為單鍵,但不限於此。 In a specific embodiment, X 2 of Formula 1 may be a single bond or an oxygen atom; or may be a single bond, but is not limited thereto.

式1中,R1至R5可以各自獨立地為氫、具1至8個碳原子的烷基、或包含9或更多個成鏈原子的直鏈。R1至R5中之至少一者可為包含9或更多個成鏈原子的直鏈。 In Formula 1, R 1 to R 5 may each independently be hydrogen, an alkyl group having 1 to 8 carbon atoms, or a linear chain containing 9 or more chain-forming atoms. At least one of R 1 to R 5 may be a linear chain containing 9 or more chain-forming atoms.

一個具體實施例中,R1至R5中,R1、R2、R4和R5可以各自獨立地為氫或具1至8個碳原子的烷基;或可各自獨立地為氫或具1至4個碳原子的烷基;或可為氫;而R3可為具9或更多個成鏈原子的直鏈。 In a specific embodiment, in R 1 to R 5 , R 1 , R 2 , R 4 and R 5 may each independently be hydrogen or an alkyl group having 1 to 8 carbon atoms; or may each independently be hydrogen or An alkyl group having 1 to 4 carbon atoms; or may be hydrogen; and R 3 may be a linear chain having 9 or more chain-forming atoms.

文中所用“成鏈原子”是指形成某些鏈的直鏈 結構之原子。此鏈可具有直鏈或支鏈結構;但是,成鏈原子的數目僅以形成最長直鏈的原子數計算。因此,其他原子如,在成鏈原子是碳原子的情況中,連接至碳原子的氫原子等未計入成鏈原子數。此外,在支鏈的情況中,成鏈原子數是形成最長鏈的原子數。例如,鏈為正戊基,所有的成鏈原子是碳原子且其數目為5。若鏈是2-甲基戊基,所有的成鏈原子亦為碳原子且其數目是5。成鏈原子可為碳、氧、硫或氮等且適當的成鏈原子可為碳、氧或氮;或碳或氧。成鏈原子的數目可為8或更高,9或更高,10或更高,11或更高,或12或更高。成鏈原子數可為30或更低,25或更低,20或更低,或16或更低。 As used herein, "chained atom" refers to a straight chain that forms certain chains. The atom of the structure. This chain may have a linear or branched structure; however, the number of chained atoms is calculated only by the number of atoms forming the longest straight chain. Therefore, in the case where other atoms are, for example, in the case where the chain-forming atom is a carbon atom, the hydrogen atom or the like which is bonded to the carbon atom is not included in the number of chain atoms. Further, in the case of branching, the number of chain atoms is the number of atoms forming the longest chain. For example, the chain is a n-pentyl group, all of the chain-forming atoms are carbon atoms and the number is five. If the chain is a 2-methylpentyl group, all of the chain-forming atoms are also carbon atoms and the number is 5. The chain-forming atoms can be carbon, oxygen, sulfur or nitrogen, and the appropriate chain-forming atoms can be carbon, oxygen or nitrogen; or carbon or oxygen. The number of chain-forming atoms may be 8 or higher, 9 or higher, 10 or higher, 11 or higher, or 12 or higher. The number of chain atoms may be 30 or lower, 25 or lower, 20 or lower, or 16 or lower.

式1的單元使得嵌段共聚物得以展現極佳的自組裝性。 The unit of Formula 1 allows the block copolymer to exhibit excellent self-assembly.

一個具體實施例中,該鏈可為直鏈烴原子,如直鏈烷基。此情況中,烷基可為包括9或更高,9至30,9至25,9至20或9至16個碳原子的烷基。烷基的碳原子中之至少一個碳原子可任意地經氧原子取代;且烷基的至少一個氫原子可任意地經另一取代基取代。 In a particular embodiment, the chain can be a linear hydrocarbon atom, such as a linear alkyl group. In this case, the alkyl group may be an alkyl group including 9 or more, 9 to 30, 9 to 25, 9 to 20 or 9 to 16 carbon atoms. At least one carbon atom of the carbon atom of the alkyl group may be optionally substituted with an oxygen atom; and at least one hydrogen atom of the alkyl group may be optionally substituted with another substituent.

任意地,直鏈烴基可包括至少一個雜原子。此雜原子可為氧原子或氮原子。 Optionally, the linear hydrocarbyl group can include at least one hetero atom. This hetero atom may be an oxygen atom or a nitrogen atom.

此鏈可為,例如,烷基、烷氧基或烷氧烷基。此情況中,烷基、烷氧基或烷氧烷基中之碳原子和氧原子的數目可為9或更高,9至30,9至25,9至20或9至16。 This chain can be, for example, an alkyl group, an alkoxy group or an alkoxyalkyl group. In this case, the number of carbon atoms and oxygen atoms in the alkyl group, alkoxy group or alkoxyalkyl group may be 9 or more, 9 to 30, 9 to 25, 9 to 20 or 9 to 16.

未特別限制可與第一嵌段一起含括於嵌段共聚物中的另一嵌段(下文中可稱為“第二嵌段”)。 Another block (hereinafter may be referred to as "second block") which is included in the block copolymer together with the first block is not particularly limited.

例如,第二嵌段可為聚乙烯基吡咯烷酮嵌段、聚乳酸嵌段、聚乙烯基吡啶嵌段、聚苯乙烯嵌段(如聚苯乙烯嵌段或聚三甲基甲矽基苯乙烯)、聚伸烷化氧嵌段(如聚伸乙化氧嵌段)、或聚烯烴嵌段(如聚乙烯嵌段或聚異戊烯嵌段或聚丁二烯嵌段)。 For example, the second block can be a polyvinylpyrrolidone block, a polylactic acid block, a polyvinylpyridine block, a polystyrene block (such as a polystyrene block or polytrimethylformamidinyl) And a polyalkylene oxide block (such as a poly(ethylene oxide block), or a polyolefin block (such as a polyethylene block or a polyisoprene block or a polybutadiene block).

一個具體實施例中,此第二嵌段可藉下式2表示。 In a specific embodiment, this second block can be represented by Formula 2.

此嵌段共聚物可進一步包含藉下式2表示的第二嵌段。 The block copolymer may further comprise a second block represented by the following formula 2.

式2中,R1可為氫或烷基而R2可為烷基。 In Formula 2, R 1 may be hydrogen or an alkyl group and R 2 may be an alkyl group.

一個具體實施例中,式2的R1可為氫或具1至4個碳原子的烷基;或可為氫或甲基;或可為甲基。 In a particular embodiment, R 1 of formula 2 can be hydrogen or an alkyl group having from 1 to 4 carbon atoms; or can be hydrogen or methyl; or can be methyl.

一個具體實施例中,式2的R2可為包含1至20,1至16,1至12,1至8或1至4個碳原子的烷基。 In a particular embodiment, R 2 of Formula 2 can be an alkyl group containing from 1 to 20, 1 to 16, 1 to 12, 1 to 8, or 1 to 4 carbon atoms.

未特別限制製造嵌段共聚物之明確方法,只要其包含藉由使用能夠形成嵌段的單體以形成嵌段共聚物 的至少一個嵌段的步驟即可。 A specific method of producing a block copolymer is not particularly limited as long as it comprises forming a block copolymer by using a monomer capable of forming a block The step of at least one block is sufficient.

例如,可藉活性自由基聚合反應(LPR)使用單體製造嵌段共聚物。例如,下列方法:陰離子聚合反應,其中,在無機酸鹽(如鹼金屬或鹼土金屬鹽)存在下,合成嵌段共聚物,此使用有機稀土金屬錯合物或有機鹼金屬化合物作為聚合反應引發劑;陰離子聚合反應,其中,在有機鋁化合物存在下,合成嵌段共聚物,此使用有機鹼金屬化合物作為聚合反應引發劑;原子轉移自由基聚合反應(ATRP),此使用原子轉移自由基聚合劑作為聚合反應控制劑;藉電子轉移(ATGET)ATRP產生的活化劑進行聚合反應,此在生成電子的有機或無機還原劑存在下,使用原子轉移自由基聚合反應劑作為聚合反應控制劑;用於連續活化劑再生(ICAR)ATRP之引發劑;可逆加成-開環鏈轉移(RAFT)聚合反應,其使用無機還原劑可逆加成-開環鏈轉移劑;及使用有機鉈化合物作為引發劑之方法,而適當的方法可選自以上的方法。 For example, a block copolymer can be produced using a living radical polymerization (LPR) using a monomer. For example, the following method: an anionic polymerization in which a block copolymer is synthesized in the presence of a mineral acid salt such as an alkali metal or an alkaline earth metal salt, which is initiated by polymerization using an organic rare earth metal complex or an organic alkali metal compound An anionic polymerization reaction in which a block copolymer is synthesized in the presence of an organoaluminum compound, which uses an organic alkali metal compound as a polymerization initiator; atom transfer radical polymerization (ATRP), which uses atom transfer radical polymerization As a polymerization control agent; an electron-transfer (ATGET) ATRP-generated activator for polymerization, in the presence of an electron-generating organic or inorganic reducing agent, using an atom transfer radical polymerization agent as a polymerization control agent; Initiator for continuous activator regeneration (ICAR) ATRP; reversible addition-open chain transfer (RAFT) polymerization using an inorganic reducing agent reversible addition-ring-opening chain transfer agent; and using an organic ruthenium compound as an initiator The method, and a suitable method may be selected from the above methods.

一個具體實施例中,製造嵌段共聚物的方法可包括在自由基引發劑和活性自由基聚合反應劑存在下,藉活性自由基聚合反應,將包含能夠形成嵌段的單體之材料加以聚合。 In a specific embodiment, the method of producing a block copolymer may comprise polymerizing a material comprising a monomer capable of forming a block by living radical polymerization in the presence of a radical initiator and a living radical polymerization agent. .

在嵌段共聚物之製造中,未特別限制用於形成嵌段共聚物中所含括之其他嵌段及藉以上單體形成嵌段的方法,此其他嵌段可藉由考慮待形成的嵌段種類,選擇適當的單體而形成。 In the manufacture of the block copolymer, a method for forming other blocks included in the block copolymer and forming a block by the above monomers is not particularly limited, and the other blocks can be considered by considering the formation to be formed The type of the segment is formed by selecting an appropriate monomer.

製造嵌段共聚物之方法可進一步包括令藉前述方法製得的聚合產物沉澱於非溶劑中。 The method of producing a block copolymer may further comprise precipitating a polymerization product obtained by the foregoing method in a non-solvent.

可以考慮聚合效能,無特別限制地適當地選擇自由基引發劑的種類,且可以使用偶氮化合物(如偶氮基雙異丁腈(AIBN)或2,2’-偶氮基雙-(2,4-二甲基戊腈))或過氧化物化合物(如苄醯基過氧化物(BPO)或二-三級丁基過氧化物(DTBP))。 The polymerization efficiency can be considered, and the kind of the radical initiator is appropriately selected without particular limitation, and an azo compound such as azobisisobutyronitrile (AIBN) or 2,2'-azobis-(2) can be used. , 4-dimethylvaleronitrile) or a peroxide compound (such as benzamidine peroxide (BPO) or di-tertiary butyl peroxide (DTBP)).

LPR可在例如下列溶劑中進行:二氯甲烷、1,2-二氯乙烷、氯苯、二氯苯、苯、甲苯、丙酮、氯仿、四氫呋喃、二噁烷、乙醇二甲醚(monoglyme)、二乙二醇二甲醚(diglyme)、二甲基甲醯胺、二甲亞碸或二甲基乙醯胺。 LPR can be carried out, for example, in the following solvents: dichloromethane, 1,2-dichloroethane, chlorobenzene, dichlorobenzene, benzene, toluene, acetone, chloroform, tetrahydrofuran, dioxane, dimethyl ether (monoglyme) , diethylene glycol dimethyl ether (diglyme), dimethylformamide, dimethyl hydrazine or dimethyl acetamide.

作為非溶劑,例如,可以無限制地使用醇化合物(如甲醇、乙醇、正丙醇或異丙醇)、二醇化合物(如乙二醇)、或醚化合物(如正己烷、環己烷、正庚烷或石油醚)。 As the non-solvent, for example, an alcohol compound (such as methanol, ethanol, n-propanol or isopropanol), a diol compound (such as ethylene glycol), or an ether compound (such as n-hexane, cyclohexane, or the like) can be used without limitation. N-heptane or petroleum ether).

由於嵌段共聚物包含經由共價鍵彼此連接的二或更多個聚合物鏈,所以其可以相分離。本申請案之嵌段共聚物展現極佳的相分離性質,需要時,可藉微相分離形成奈米尺寸結構。奈米尺寸結構的形狀或尺寸可藉嵌段共聚物的尺寸(分子量等)或嵌段的相對比控制。藉相分離形成的結構可包括球、圓柱、螺旋二十四面體、和層合物及相反結構,並將形成前述結構的能力稱為自組裝性。 Since the block copolymer contains two or more polymer chains connected to each other via a covalent bond, it can be phase separated. The block copolymers of the present application exhibit excellent phase separation properties which, if desired, can be formed by microphase separation to form a nano-sized structure. The shape or size of the nano-sized structure can be controlled by the size of the block copolymer (molecular weight, etc.) or the relative ratio of the blocks. The structure formed by phase separation may include a sphere, a cylinder, a spiral tetrahedron, and a laminate and an opposite structure, and the ability to form the foregoing structure is referred to as self-assembly.

此嵌段共聚物可具有,例如,在約3,000至 300,000範圍內的數量平均分子量(Mn)。文中所用“數量平均分子量”是指藉GPC(凝膠穿透層析法)測定,相對於聚苯乙烯標準品之轉化值。除非另外指出,否則文中所用“分子量”是指數量平均分子量。另一具體實施例中,分子量(Mn)可為,例如,3000或更高,5000或更高,7000或更高,9000或更高,11000或更高,13000或更高,或15000或更高。另一具體實施例中,此分子量(Mn)可為,例如,250000或更低,200000或更低,180000或更低,160000或更低,140000或更低,120000或更低,100000或更低,90000或更低,80000或更低,70000或更低,60000或更低,50000或更低,40000或更低,30000或更低,或25000或更低。此嵌段共聚物可具有在1.01至1.60之範圍內的多分散性(Mw/Mn)。另一具體實施例中,多分散性可為約1.1或更高,約1.2或更高,約1.3或更高,或約1.4或更高。 The block copolymer may have, for example, at about 3,000 to The number average molecular weight (Mn) in the range of 300,000. As used herein, "number average molecular weight" refers to the conversion value as determined by GPC (gel permeation chromatography) relative to polystyrene standards. As used herein, unless otherwise indicated, "molecular weight" as used herein refers to a number average molecular weight. In another specific embodiment, the molecular weight (Mn) may be, for example, 3000 or higher, 5000 or higher, 7000 or higher, 9000 or higher, 11,000 or higher, 13,000 or higher, or 15,000 or more. high. In another embodiment, the molecular weight (Mn) may be, for example, 250,000 or less, 200,000 or less, 180,000 or less, 160,000 or less, 140,000 or less, 120,000 or less, 100,000 or more. Low, 90,000 or lower, 80,000 or lower, 70,000 or lower, 60,000 or lower, 50,000 or lower, 40,000 or lower, 30,000 or lower, or 25,000 or lower. This block copolymer may have a polydispersity (Mw/Mn) in the range of 1.01 to 1.60. In another embodiment, the polydispersity can be about 1.1 or higher, about 1.2 or higher, about 1.3 or higher, or about 1.4 or higher.

在以上範圍中,嵌段共聚物展現適當的自組裝性。可以考慮標的自組裝結構,控制嵌段共聚物的數量平均分子量等。 In the above range, the block copolymer exhibits appropriate self-assembly. The target self-assembled structure can be considered to control the number average molecular weight of the block copolymer and the like.

若嵌段共聚物至少包括第一和第二嵌段,則第一嵌段(例如,嵌段共聚物中之包括該鏈的嵌段)之比可在10莫耳%至90莫耳%範圍內。 If the block copolymer includes at least the first and second blocks, the ratio of the first block (eg, the block including the chain in the block copolymer) may range from 10 mol% to 90 mol% Inside.

本申請案係關於包括嵌段共聚物之聚合物層。此聚合物層可用於各種應用。例如,其可用於生物感知器、記錄介質(如快閃記憶體)、磁性記憶介質或圖案 形成方法或電力裝置或電子裝置等。 This application is directed to a polymer layer comprising a block copolymer. This polymer layer can be used in a variety of applications. For example, it can be used for biosensors, recording media (such as flash memory), magnetic memory media or patterns A method of forming or a power device or an electronic device or the like.

一個具體實施例中,聚合物層中之嵌段共聚物可藉自組裝物製成周期性結構,包括球、圓筒、螺旋二十四面體、或層合物。 In a specific embodiment, the block copolymer in the polymer layer can be made into a periodic structure from a self-assembly, including a sphere, a cylinder, a spiral tetrahedron, or a laminate.

例如,在嵌段共聚物中經由共價鍵連接至上述嵌段之第一嵌段或第二嵌段或其他嵌段的一個鏈段中,其他鏈段可形成規則結構,如層合形式、圓筒形式等。 For example, in a segment of a block copolymer that is linked to a first block or a second block or other block of the above block via a covalent bond, the other segments may form a regular structure, such as a laminated form, Cylindrical form, etc.

本申請案亦係關於使用嵌段共聚物形成聚合物層之方法。此方法包括在基板上形成包括自組裝狀態之嵌段共聚物之聚合物層。例如,此方法包括藉由塗覆等方法在基板上形成嵌段共聚物層或塗覆液的層(其中,嵌段共聚物稀釋於適當溶劑,和需要時,接著老化或熱處理該層。 This application is also directed to a method of forming a polymer layer using a block copolymer. The method includes forming a polymer layer comprising a block copolymer in a self-assembled state on a substrate. For example, the method includes forming a layer of a block copolymer layer or a coating liquid on a substrate by a method such as coating (wherein the block copolymer is diluted in a suitable solvent, and if necessary, subsequently aging or heat-treating the layer.

此老化或熱處理可基於,例如,嵌段共聚物的相轉變溫度或玻璃轉變溫度,進行,且例如,可於高於玻璃轉變溫度或相轉變溫度的溫度進行。未特別限制熱處理的時間,且熱處理可進行約1分鐘至72小時,但可因需要而改變。此外,聚合物層的熱處理溫度可為,例如,100℃至250℃,但可考慮此處所用嵌段共聚物而改變。 This aging or heat treatment can be performed based on, for example, the phase transition temperature or the glass transition temperature of the block copolymer, and can be carried out, for example, at a temperature higher than the glass transition temperature or the phase transition temperature. The heat treatment time is not particularly limited, and the heat treatment may be performed for about 1 minute to 72 hours, but may be changed as needed. Further, the heat treatment temperature of the polymer layer may be, for example, 100 ° C to 250 ° C, but may be changed in consideration of the block copolymer used herein.

形成的層可在非極性溶劑和/或極性溶劑中於室溫下老化約1分鐘至72小時。 The layer formed can be aged in a non-polar solvent and/or a polar solvent at room temperature for about 1 minute to 72 hours.

本申請案亦係關於形成圖案的方法。該方法包括從包括基板和形成於該基板上之包含自組裝的嵌段共聚物之聚合物層的層合物,選擇性地移除該嵌段共聚物中 的第一或第二嵌段。此方法可為在上述基板上形成圖案之方法。例如,此方法可包括在基板上形成聚合物層,選擇性地移除嵌段共聚物(其為聚合物層)中的一個嵌段或二或更多個嵌段;及之後蝕刻此基板。藉上述方法,例如,可形成奈米尺寸的微圖案。此外,根據聚合物層中之嵌段共聚物的形狀,可藉上述方法形成各種形狀的圖案(如奈米棍或奈米孔)。需要時,為形成圖案,嵌段共聚物可與另一共聚物或均聚物混合。可以無特別限制地選擇施用於此方法之基板的種類,且,例如,可施用氧化矽等。 This application is also directed to a method of forming a pattern. The method includes selectively removing the block copolymer from a laminate comprising a substrate and a polymer layer comprising a self-assembled block copolymer formed on the substrate The first or second block. This method can be a method of forming a pattern on the above substrate. For example, the method can include forming a polymer layer on the substrate, selectively removing one block or two or more blocks in the block copolymer (which is a polymer layer); and etching the substrate thereafter. By the above method, for example, a micro-pattern of a nanometer size can be formed. Further, depending on the shape of the block copolymer in the polymer layer, patterns of various shapes (such as nano-sticks or nanopores) can be formed by the above method. If desired, to form a pattern, the block copolymer can be mixed with another copolymer or homopolymer. The kind of the substrate to which the method is applied can be selected without particular limitation, and, for example, cerium oxide or the like can be applied.

例如,根據此方法,可形成具有高縱橫比之氧化矽的奈米尺寸圖案。例如,藉由在氧化矽上形成聚合物層,在聚合物層中的嵌段共聚物以預定結構形成的狀態下,選擇性地移除嵌段共聚物的任一嵌段,並以各種方法(例如,反應性離子蝕刻)蝕刻氧化矽,可形成各種類型的圖案(如奈米棍或奈米孔圖案)。此外,根據上述方法,可形成具有高縱橫比的奈米圖案。 For example, according to this method, a nano-size pattern having a high aspect ratio of cerium oxide can be formed. For example, by forming a polymer layer on ruthenium oxide, selectively removing any block of the block copolymer in a state in which the block copolymer in the polymer layer is formed in a predetermined structure, and in various methods Etching of yttrium oxide (e.g., reactive ion etching) can form various types of patterns (e.g., nano-stick or nanopore patterns). Further, according to the above method, a nano pattern having a high aspect ratio can be formed.

例如,形成的圖案尺寸可為數十奈米,且此圖案可用於各種用途,包括下一代資訊電子磁記錄介質。 For example, the formed pattern size may be several tens of nanometers, and the pattern can be used for various purposes including the next generation information electronic magnetic recording medium.

例如,藉上述方法,可形成以約6至80奈米的間隔配置之具有約3至40的寬度之奈米結構圖案(例如,奈米線)。另一具體實施例中,可得到例如,約3至40奈米直徑以約6至80奈米間隔排列的奈米孔結構。 For example, by the above method, a nanostructure pattern (for example, a nanowire) having a width of about 3 to 40 which is disposed at intervals of about 6 to 80 nm can be formed. In another embodiment, for example, a nanopore structure having a diameter of about 3 to 40 nm and arranged at intervals of about 6 to 80 nm can be obtained.

此外,此結構中,可形成具有高縱橫比的奈米線或奈米孔。 Further, in this structure, a nanowire or a nanopore having a high aspect ratio can be formed.

此方法中,未特別限制選擇性地移除嵌段共聚物中之任何嵌段的方法,例如,可以使用藉照射適當的電磁波(例如,超紫外射線)於聚合物層以移除相對軟嵌段之方法。此情況中,用於超紫外射線的條件可以根據嵌段共聚物的嵌段類型而決定,且具有約254奈米的波長之超紫外射線可照射1至60分鐘。 In this method, a method of selectively removing any of the blocks in the block copolymer is not particularly limited, and for example, it is possible to use a suitable electromagnetic wave (for example, ultra-ultraviolet rays) to irradiate the polymer layer to remove the relatively soft embedded layer. The method of paragraph. In this case, the conditions for the ultra-ultraviolet rays may be determined according to the block type of the block copolymer, and the ultra-ultraviolet rays having a wavelength of about 254 nm may be irradiated for 1 to 60 minutes.

此外,超紫外射線照射之後,聚合物層可經酸處理以進一步移除被超紫外射線破壞的鏈段。 In addition, after ultra-ultraviolet radiation, the polymer layer can be acid treated to further remove segments that are destroyed by the ultra-ultraviolet rays.

此外,對使用自彼選擇性地移除嵌段之聚合物層之基板進行蝕刻處理,此可藉由使用CF4/Ar離子藉反應性離子蝕刻進行,且在上述方法之後,可進一步藉氧電漿處理而自基板移除聚合物層。 In addition, etching is performed on the substrate using the polymer layer from which the block is selectively removed, which can be performed by reactive ion etching using CF 4 /Ar ions, and further oxygen can be taken after the above method The plasma treatment removes the polymer layer from the substrate.

本申請案提供嵌段共聚物和其應用。該嵌段共聚物具有極佳的自組裝性和相分離,且必需時,可自由地施加各種要求的功能。 This application provides block copolymers and their use. The block copolymer has excellent self-assembly and phase separation, and when necessary, can freely apply various desired functions.

圖1出示藉AFM觀察實例1之共聚物之結構。 Figure 1 shows the structure of the copolymer of Example 1 observed by AFM.

圖2出示藉AFM觀察實例2之共聚物之結構。 Figure 2 shows the structure of the copolymer of Example 2 observed by AFM.

下文中,將參考實例和比較例,詳細描述本申請案,但本申請案之範圍未限於以下實例。 Hereinafter, the present application will be described in detail with reference to the examples and comparative examples, but the scope of the present application is not limited to the following examples.

1. NMR分析NMR analysis

藉由使用包括具有三重共振5mm探頭的Varian Unity Inova(500MHz)光譜儀之NMR光譜儀,於室溫進行NMR分析。待分析的樣品稀釋於用於NMR分析的溶劑(CDCl3)中至約10mg/ml的濃度之後,進行分析,化學位移(δ)以ppm表示。 NMR analysis was carried out at room temperature by using an NMR spectrometer comprising a Varian Unity Inova (500 MHz) spectrometer with a triple resonance 5 mm probe. The sample to be analyzed was diluted in a solvent (CDCl 3 ) for NMR analysis to a concentration of about 10 mg/ml, and analyzed, and the chemical shift (δ) was expressed in ppm.

<縮寫> <abbreviation>

br=寬訊號,s=單峰,d=二重峰,dd=兩個二重峰,t=三重峰,dt=兩個三重峰,q=四重峰,p=五重峰,m=多重峰 Br=broad signal, s=single peak, d=doublet, dd=two doublet, t=triplet, dt=two triplet, q=quadruple, p=fivet, m= Multiple peak

2. GPC(凝膠穿透層析)2. GPC (gel penetration chromatography)

藉GPC(凝膠穿透層析)測定數量平均分子量和多分散性。 The number average molecular weight and polydispersity were determined by GPC (gel permeation chromatography).

<GPC測定條件> <GPC measurement conditions>

裝置:Agilent technologies,Co.的1200系列 Device: Agilent technologies, Co.'s 1200 Series

管柱:使用Polymer laboratories,Co.,的PLgel mixed B中之二者 Column: Two of PLgel mixed B using Polymer laboratories, Co.

溶劑:THF Solvent: THF

管柱溫度:35℃ Column temperature: 35 ° C

樣品濃度:1mg/mL,注射200L Sample concentration: 1mg/mL, injection 200L

標準樣品:聚苯乙烯(Mp:3900000, 723000,316500,52200,31400,7200,3940,485) Standard sample: polystyrene (Mp: 3900000, 723000, 316500, 52200, 31400, 7200, 3940, 485)

實例或比較例之待測定的嵌段共聚物或巨分子引發劑置於5mL小瓶中,之後稀釋至約1mg/mL的濃度。之後,用於校正的標準樣品和待分析的樣品藉注射濾器(孔尺寸:0.45微米)過濾並於之後分析。使用得自Agilent technologies,Co.,的ChemStation作為分析程式。藉由比較樣品的沖提時間和校正曲線,得到數量平均分子量(Mn)和重量平均分子量(Mw),之後自其比值(Mw/Mn)得到多分散性(PDI)。 The block copolymer or macroinitiator to be determined of the examples or comparative examples was placed in a 5 mL vial and then diluted to a concentration of about 1 mg/mL. Thereafter, the standard sample for calibration and the sample to be analyzed were filtered by a syringe filter (pore size: 0.45 μm) and analyzed thereafter. ChemStation from Agilent technologies, Co., was used as an analytical program. The number average molecular weight (Mn) and the weight average molecular weight (Mw) were obtained by comparing the elution time and the calibration curve of the sample, and then polydispersity (PDI) was obtained from the ratio (Mw/Mn).

製備例1. 對-十二碳烷基苯乙烯(A)之合成Preparation Example 1. Synthesis of p-dodecylalkylstyrene (A)

對-十二碳烷基苯乙烯之合成如下。藉由將4-溴苯乙烯(5.0g,27.3mmole)和Mg屑(0.064g,27.31mmole)置於100mL瓶中;將其溶於已除水的30mL四氫呋喃中;添加少量碘作為觸媒;之後在室溫於氮下攪拌約6小時以使其反應,製得格林納試劑。1-溴十二碳烷置於另一100mL瓶中,之後,緩慢添加上述合成的格林納試劑於0℃。之後,將四氯銅酸(II)二鋰溶液(8.2mL,0.92mmole)加至其中,此瓶受熱至室溫且混合物藉攪拌3小時而反應。反應之後,移除四氫呋喃,標的化合物在管柱層析法中,使用己烷作為流動相而加以純化,並藉此得到透明的液態標的化合物(2.54g,9.32mmole)。 The synthesis of p-dodecylstyrene is as follows. 4-bromostyrene (5.0 g, 27.3 mmole) and Mg crumb (0.064 g, 27.31 mmole) were placed in a 100 mL bottle; dissolved in 30 mL of tetrahydrofuran in water; a small amount of iodine was added as a catalyst; Thereafter, the mixture was stirred at room temperature under nitrogen for about 6 hours to cause a reaction, and a Grignard reagent was obtained. 1-Bromododecane was placed in another 100 mL bottle, after which the above-mentioned synthesized Grignard reagent was slowly added at 0 °C. Thereafter, a dilithium tetrachlorotitanate (II) solution (8.2 mL, 0.92 mmole) was added thereto, and the bottle was heated to room temperature and the mixture was reacted by stirring for 3 hours. After the reaction, the tetrahydrofuran was removed, and the title compound was purified by column chromatography using hexane as a mobile phase to give a transparent liquid title compound (2.54 g, 9.32 mmole).

<NMR分析結果> <NMR analysis results>

1H-NMR(CDCl3):δ7.33(dd,2H);δ7.14(dd, 2H);δ6.70(dd,1H);δ5.71(d,1H);δ5.18(d,1H);δ2.59(t,2H);δ1.60(p,2H);δ1.31-1.26(m,18H);δ0.89(t,3H) 1 H-NMR (CDCl 3 ): δ 7.33 (dd, 2H); δ 7.14 (dd, 2H); δ 6.70 (dd, 1H); δ 5.71 (d, 1H); δ 5.18 (d) ,1H);δ2.59(t,2H);δ1.60(p,2H);δ1.31-1.26(m,18H);δ0.89(t,3H)

製備例2. 對-十二碳烷氧基甲基苯乙烯(B)之合成Preparation 2. Synthesis of p-dodecyloxymethylstyrene (B)

對-十二碳烷氧基甲基苯乙烯(B)之合成如下。將4-氯甲基苯乙烯(22.1g,144.8mmole)和1-十二碳醇(30.0g,160.1mmole)溶於300mL四氫呋喃中,之後冷卻至0℃。將氫化鈉(NaH)(7.7g,320.8mmole)加至其中;藉由攪拌1小時,使此混合物反應;此混合物加熱至70℃並於之後反應24小時。反應之後,反應產物冷卻至室溫,藉由與小量水在冰水中反應而移除剩餘的氫化鈉,並藉過濾移除固體。移除作為反應溶劑的四氫呋喃;使用二氯甲烷/二度純化的水,藉分步萃取收集有機層,藉管柱層析法,使用己烷/二氯甲烷作為流動相,得到透明液態標的化合物(23.9g,79.0mmole)。 The synthesis of p-dodecyloxymethylstyrene (B) is as follows. 4-Chloromethylstyrene (22.1 g, 144.8 mmole) and 1-dodecyl alcohol (30.0 g, 160.1 mmole) were dissolved in 300 mL of tetrahydrofuran and then cooled to 0 °C. Sodium hydride (NaH) (7.7 g, 320.8 mmole) was added thereto; the mixture was reacted by stirring for 1 hour; the mixture was heated to 70 ° C and then reacted for 24 hours. After the reaction, the reaction product was cooled to room temperature, and the remaining sodium hydride was removed by reacting with a small amount of water in ice water, and the solid was removed by filtration. The tetrahydrofuran as a reaction solvent was removed; the organic layer was collected by a step-by-step extraction using dichloromethane/second purified water, by column chromatography using hexane/dichloromethane as a mobile phase to give a transparent liquid standard compound. (23.9 g, 79.0 mmole).

<NMR分析結果> <NMR analysis results>

1H-NMR(CDCl3):δ7.39(dd,2H);δ7.30(dd,2H);δ 6.71(dd,1H);δ5.74(d,1H);δ5.23(d,1H);δ4.49(s,2H);δ3.46(t,2H);δ1.61(p,2H);δ1.37-1.26(m,16H);δ0.89(t,3H) 1 H-NMR (CDCl 3 ): δ 7.39 (dd, 2H); δ 7.30 (dd, 2H); δ 6.71 (dd, 1H); δ 5.74 (d, 1H); δ 5.23 (d, 1H);δ4.49(s,2H);δ3.46(t,2H);δ1.61(p,2H);δ1.37-1.26(m,16H);δ0.89(t,3H)

實例1Example 1

藉由令甲基丙烯酸甲酯與RAFT(可逆式加成-裂片鏈轉移劑)試劑和作為熱引發劑的AIBN(偶氮基 雙異丁腈)反應,合成巨分子引發劑(數量平均分子量(Mn):7000,多分散性(PDI):1.16)。合成的巨分子引發劑、製備例1中製備的化合物(A)和偶氮基雙異丁腈(AIBN)以重量比1:70:0.5(巨分子引發劑:化合物(A):AIBN)溶於甲苯中(溶劑:20重量%),之後在氮氣下於80℃反應16小時,藉此製得嵌段共聚物。此嵌段共聚物的數量平均分子量為19200,且多分散性為1.17。 By using methyl methacrylate with RAFT (reversible addition-cleaving chain transfer agent) reagent and AIBN (azo group) as thermal initiator Double isobutyronitrile) reaction, synthesis of macroinitiator (number average molecular weight (Mn): 7000, polydispersity (PDI): 1.16). The synthesized macromolecule initiator, the compound (A) prepared in Preparation Example 1, and the azobisisobutyronitrile (AIBN) are dissolved at a weight ratio of 1:70:0.5 (macromolecule initiator: compound (A): AIBN). The block copolymer was obtained by reacting in toluene (solvent: 20% by weight), followed by reaction at 80 ° C for 16 hours under nitrogen. This block copolymer had a number average molecular weight of 19,200 and a polydispersity of 1.17.

實例2Example 2

藉與實例1中所述之相同的方法合成巨分子引發劑(數量平均分子量(Mn):8400,多分散性(PDI):1.15),及之後藉與實例1中所述之相同的方法製備嵌段共聚物,但使用製備例2中的化合物(B)代替製備例1中的化合物(A)。此嵌段共聚物的數量平均分子量為21900,且多分散性為1.19。 A macroinitiator (quantitative average molecular weight (Mn): 8400, polydispersity (PDI): 1.15) was synthesized by the same method as described in Example 1, and then prepared by the same method as described in Example 1. The block copolymer was used, but the compound (B) in Preparation Example 2 was used instead of the compound (A) in Preparation Example 1. The block copolymer had a number average molecular weight of 2,1900 and a polydispersity of 1.19.

試驗例1Test example 1

使用旋轉塗覆機,於3000rpm,60秒鐘,將實例1或2的嵌段共聚物以約1.0重量%溶於甲苯中所製得的塗覆液塗覆於矽晶圓上,形成聚合物層。此聚合物層於160℃進行1小時的熱處理,藉此於其表面實現奈米結構。藉AFM(原子力顯微鏡)觀察所實現的奈米結構。圖1為實例1的結果而圖2為實例2的結果。 Coating solution prepared by dissolving the block copolymer of Example 1 or 2 at about 1.0% by weight in toluene on a ruthenium wafer using a spin coater at 3000 rpm for 60 seconds to form a polymer Floor. This polymer layer was heat-treated at 160 ° C for 1 hour, whereby a nanostructure was realized on the surface thereof. The nanostructure realized by AFM (atomic force microscope) was observed. Figure 1 is the result of Example 1 and Figure 2 is the result of Example 2.

Claims (9)

一種嵌段共聚物,其包含下式1所示的第一嵌段: 其中X2是單鍵、氧原子、硫原子、-S(=O)2-、伸烷基、伸烯基、伸炔基,R1至R5各自獨立地為氫、具1至8個碳原子的烷基或具9或更多個成鏈原子的直鏈,且R1至R5中之至少一者係具9或更多個成鏈原子的直鏈,及其中該具9或更多個成鏈原子的直鏈是烷基、烷氧基或烷氧烷基。 A block copolymer comprising a first block of the following formula 1: Wherein X 2 is a single bond, an oxygen atom, a sulfur atom, -S(=O) 2 -, an alkylene group, an alkenyl group, an alkynyl group, and R 1 to R 5 are each independently hydrogen, having 1 to 8 An alkyl group of a carbon atom or a straight chain having 9 or more chain-forming atoms, and at least one of R 1 to R 5 is a linear chain having 9 or more chain-forming atoms, and wherein the group has 9 or More straight chain-forming atoms are alkyl, alkoxy or alkoxyalkyl. 如申請專利範圍第1項之嵌段共聚物,其中X2是單鍵或氧原子。 The block copolymer of claim 1, wherein X 2 is a single bond or an oxygen atom. 如申請專利範圍第1項之嵌段共聚物,其中該直鏈包含9至30個成鏈原子。 The block copolymer of claim 1, wherein the linear chain comprises from 9 to 30 chain-forming atoms. 如申請專利範圍第1項之嵌段共聚物,其進一步包含下式2所示的第二嵌段: 其中R1是氫或烷基且R2是烷基。 The block copolymer of claim 1, which further comprises the second block of the following formula 2: Wherein R 1 is hydrogen or alkyl and R 2 is alkyl. 如申請專利範圍第4項之嵌段共聚物,其中式2的R1是具1至4個碳原子的烷基。 The block copolymer of claim 4, wherein R 1 of the formula 2 is an alkyl group having 1 to 4 carbon atoms. 如申請專利範圍第4項之嵌段共聚物,其中式2的R2是具1至4個碳原子的烷基。 The block copolymer of claim 4, wherein R 2 of the formula 2 is an alkyl group having 1 to 4 carbon atoms. 一種聚合物層,其包含如申請專利範圍第1項之嵌段共聚物的自組裝產物。 A polymer layer comprising the self-assembled product of the block copolymer of claim 1 of the patent application. 一種形成聚合物層之方法,其包括形成包含如申請專利範圍第1項之嵌段共聚物的自組裝產物之聚合物層。 A method of forming a polymer layer comprising forming a polymer layer comprising a self-assembled product of the block copolymer of claim 1 of the patent application. 一種形成圖案之方法,其包含從包括基板和形成於該基板上之包含如申請專利範圍第1項之嵌段共聚物的自組裝產物之聚合物層的層合物,選擇性地移除該嵌段共聚物中的第一嵌段或不同於該第一嵌段的第二嵌段。 A method of forming a pattern comprising selectively removing a laminate comprising a substrate and a polymer layer formed on the substrate comprising a self-assembled product of the block copolymer of claim 1 A first block in the block copolymer or a second block different from the first block.
TW103142956A 2013-12-06 2014-12-08 Block copolymer TWI557173B (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
KR20130151866 2013-12-06
KR20130151865 2013-12-06
KR20130151867 2013-12-06
KR20130159994 2013-12-20
KR20140131964 2014-09-30

Publications (2)

Publication Number Publication Date
TW201534652A TW201534652A (en) 2015-09-16
TWI557173B true TWI557173B (en) 2016-11-11

Family

ID=53514851

Family Applications (14)

Application Number Title Priority Date Filing Date
TW103142798A TWI597300B (en) 2013-12-06 2014-12-08 Block copolymer
TW103142963A TWI596152B (en) 2013-12-06 2014-12-08 Block copolymer
TW103142805A TWI596128B (en) 2013-12-06 2014-12-08 Block copolymer
TW103142790A TWI591085B (en) 2013-12-06 2014-12-08 Block copolymer
TW103142786A TWI596126B (en) 2013-12-06 2014-12-08 Block copolymer
TW103142956A TWI557173B (en) 2013-12-06 2014-12-08 Block copolymer
TW103142777A TWI596124B (en) 2013-12-06 2014-12-08 Block copolymer
TW103142745A TWI596119B (en) 2013-12-06 2014-12-08 Block copolymer
TW103142955A TWI586692B (en) 2013-12-06 2014-12-08 Monomer and block copolymer
TW103142794A TWI596127B (en) 2013-12-06 2014-12-08 Block copolymer
TW103142784A TWI532780B (en) 2013-12-06 2014-12-08 Block copolymer
TW103142780A TWI598368B (en) 2013-12-06 2014-12-08 Block copolymer
TW103142802A TWI586691B (en) 2013-12-06 2014-12-08 Block copolymer
TW103142782A TWI596125B (en) 2013-12-06 2014-12-08 Block copolymer

Family Applications Before (5)

Application Number Title Priority Date Filing Date
TW103142798A TWI597300B (en) 2013-12-06 2014-12-08 Block copolymer
TW103142963A TWI596152B (en) 2013-12-06 2014-12-08 Block copolymer
TW103142805A TWI596128B (en) 2013-12-06 2014-12-08 Block copolymer
TW103142790A TWI591085B (en) 2013-12-06 2014-12-08 Block copolymer
TW103142786A TWI596126B (en) 2013-12-06 2014-12-08 Block copolymer

Family Applications After (8)

Application Number Title Priority Date Filing Date
TW103142777A TWI596124B (en) 2013-12-06 2014-12-08 Block copolymer
TW103142745A TWI596119B (en) 2013-12-06 2014-12-08 Block copolymer
TW103142955A TWI586692B (en) 2013-12-06 2014-12-08 Monomer and block copolymer
TW103142794A TWI596127B (en) 2013-12-06 2014-12-08 Block copolymer
TW103142784A TWI532780B (en) 2013-12-06 2014-12-08 Block copolymer
TW103142780A TWI598368B (en) 2013-12-06 2014-12-08 Block copolymer
TW103142802A TWI586691B (en) 2013-12-06 2014-12-08 Block copolymer
TW103142782A TWI596125B (en) 2013-12-06 2014-12-08 Block copolymer

Country Status (2)

Country Link
KR (15) KR101762487B1 (en)
TW (14) TWI597300B (en)

Families Citing this family (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3078654B1 (en) 2013-12-06 2021-07-07 LG Chem, Ltd. Monomer and block copolymer
WO2015084123A1 (en) 2013-12-06 2015-06-11 주식회사 엘지화학 Block copolymer
CN106459326B (en) 2013-12-06 2019-08-13 株式会社Lg化学 Block copolymer
EP3078689B1 (en) 2013-12-06 2020-12-02 LG Chem, Ltd. Block copolymer
CN105934455B (en) 2013-12-06 2019-01-18 株式会社Lg化学 Block copolymer
EP3078692B1 (en) 2013-12-06 2021-01-27 LG Chem, Ltd. Block copolymer
US10087276B2 (en) 2013-12-06 2018-10-02 Lg Chem, Ltd. Block copolymer
CN105899560B (en) 2013-12-06 2018-01-12 株式会社Lg化学 Block copolymer
CN105873969B (en) 2013-12-06 2018-09-04 株式会社Lg化学 Block copolymer
EP3078694B1 (en) 2013-12-06 2021-01-27 LG Chem, Ltd. Block copolymer
EP3078690B1 (en) 2013-12-06 2021-01-27 LG Chem, Ltd. Block copolymer
US10239980B2 (en) 2013-12-06 2019-03-26 Lg Chem, Ltd. Block copolymer
KR101762487B1 (en) * 2013-12-06 2017-07-27 주식회사 엘지화학 Block copolymer
JP6361893B2 (en) 2013-12-06 2018-07-25 エルジー・ケム・リミテッド Block copolymer
WO2015084127A1 (en) 2013-12-06 2015-06-11 주식회사 엘지화학 Block copolymer
EP3214102B1 (en) 2014-09-30 2022-01-05 LG Chem, Ltd. Block copolymer
CN107075051B (en) 2014-09-30 2019-09-03 株式会社Lg化学 Block copolymer
CN107075050B (en) 2014-09-30 2019-08-13 株式会社Lg化学 Block copolymer
EP3202801B1 (en) 2014-09-30 2021-08-18 LG Chem, Ltd. Block copolymer
US10703897B2 (en) 2014-09-30 2020-07-07 Lg Chem, Ltd. Block copolymer
EP3202797B1 (en) 2014-09-30 2021-07-07 LG Chem, Ltd. Block copolymer
JP6538158B2 (en) 2014-09-30 2019-07-03 エルジー・ケム・リミテッド Block copolymer
WO2016053007A1 (en) 2014-09-30 2016-04-07 주식회사 엘지화학 Method for producing patterned substrate
US10287430B2 (en) 2014-09-30 2019-05-14 Lg Chem, Ltd. Method of manufacturing patterned substrate
EP3202798B1 (en) 2014-09-30 2022-01-12 LG Chem, Ltd. Block copolymer
KR102096272B1 (en) * 2016-11-30 2020-04-02 주식회사 엘지화학 Block copolymer
KR101946775B1 (en) * 2016-11-30 2019-02-12 주식회사 엘지화학 Block copolymer
CN110023384B (en) 2016-11-30 2022-06-07 株式会社Lg化学 Laminate
WO2018101741A1 (en) 2016-11-30 2018-06-07 주식회사 엘지화학 Laminate
KR102096271B1 (en) * 2016-11-30 2020-05-27 주식회사 엘지화학 Block copolymer
JP7078211B2 (en) 2016-11-30 2022-05-31 エルジー・ケム・リミテッド Polymer composition
KR102183698B1 (en) 2016-11-30 2020-11-26 주식회사 엘지화학 Preparation method for polymer layer
KR102096274B1 (en) * 2016-11-30 2020-04-02 주식회사 엘지화학 Block copolymer
KR102277770B1 (en) * 2017-07-14 2021-07-15 주식회사 엘지화학 Method for planarization of block copolymer layer and method for forming pattern
EP3640298B1 (en) 2017-07-14 2022-03-09 LG Chem, Ltd. Neutral layer composition
EP3640296B1 (en) 2017-07-14 2021-12-01 LG Chem, Ltd. Neutral layer composition
KR102096270B1 (en) * 2017-07-14 2020-04-02 주식회사 엘지화학 Compositon for neural layer
TWI805617B (en) 2017-09-15 2023-06-21 南韓商Lg化學股份有限公司 Laminate
TWI695860B (en) * 2017-11-07 2020-06-11 南韓商Lg化學股份有限公司 Polymer composition
KR102436923B1 (en) * 2018-01-26 2022-08-26 주식회사 엘지화학 Block copolymer containing photo-sensitive moiety
KR102484626B1 (en) * 2018-08-16 2023-01-04 주식회사 엘지화학 Preparation method of substrate
KR102550419B1 (en) 2018-08-16 2023-07-04 주식회사 엘지화학 Block copolymer
KR102484628B1 (en) * 2018-08-16 2023-01-04 주식회사 엘지화학 Compositon for neural layer
KR102484630B1 (en) * 2018-08-16 2023-01-04 주식회사 엘지화학 Preparation method of patterened substrate
KR102484627B1 (en) * 2018-08-16 2023-01-04 주식회사 엘지화학 Pinning layer composition
KR102498631B1 (en) * 2018-08-16 2023-02-10 주식회사 엘지화학 Preparation method of patterened substrate
KR102522249B1 (en) * 2018-08-16 2023-04-17 주식회사 엘지화학 Preparation method of patterened substrate
KR102484629B1 (en) * 2018-08-16 2023-01-04 주식회사 엘지화학 Compositon for neural layer
KR102534530B1 (en) * 2018-08-31 2023-05-19 주식회사 엘지화학 Preparation method of patterened substrate
KR102522182B1 (en) * 2018-08-31 2023-04-14 주식회사 엘지화학 Preparation method of patterened substrate
KR20210103167A (en) 2020-02-13 2021-08-23 삼성전자주식회사 Semiconductor package

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201323461A (en) * 2011-09-06 2013-06-16 Univ Cornell Block copolymers and lithographic patterning using same

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3121116B2 (en) 1992-05-21 2000-12-25 出光興産株式会社 Styrene block copolymer and method for producing the same
US5728431A (en) * 1996-09-20 1998-03-17 Texas A&M University System Process for forming self-assembled polymer layers on a metal surface
KR100622353B1 (en) 1998-12-30 2006-09-11 노베온, 인코포레이티드 Branched/block copolymers for treatment of keratinous substrates
JP4625901B2 (en) * 2000-11-08 2011-02-02 独立行政法人産業技術総合研究所 Syndiotactic aromatic vinyl block copolymer and process for producing the same
JP4453814B2 (en) * 2003-11-12 2010-04-21 Jsr株式会社 Polymerizable compound and mixture, and method for producing liquid crystal display device
JP2010115832A (en) 2008-11-12 2010-05-27 Panasonic Corp Method for promoting self-formation of block copolymer and method for forming self-formation pattern of block copolymer using the method for promoting self-formation
CN101492520A (en) * 2009-03-04 2009-07-29 中国科学院上海有机化学研究所 Diblock copolymer containing full-fluorine cyclobutyl aryl aether block and uses thereof
JP5505371B2 (en) * 2010-06-01 2014-05-28 信越化学工業株式会社 Polymer compound, chemically amplified positive resist material, and pattern forming method
KR101762487B1 (en) * 2013-12-06 2017-07-27 주식회사 엘지화학 Block copolymer

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201323461A (en) * 2011-09-06 2013-06-16 Univ Cornell Block copolymers and lithographic patterning using same

Also Published As

Publication number Publication date
TWI596126B (en) 2017-08-21
KR20150066489A (en) 2015-06-16
KR101768288B1 (en) 2017-08-17
TWI596124B (en) 2017-08-21
TWI596127B (en) 2017-08-21
KR20150067072A (en) 2015-06-17
KR101768290B1 (en) 2017-08-18
TWI596128B (en) 2017-08-21
TW201538546A (en) 2015-10-16
KR101770882B1 (en) 2017-08-24
TW201538552A (en) 2015-10-16
KR101763009B1 (en) 2017-08-03
TW201536818A (en) 2015-10-01
KR101762487B1 (en) 2017-07-27
TWI598368B (en) 2017-09-11
TW201536824A (en) 2015-10-01
TWI586691B (en) 2017-06-11
KR20150067073A (en) 2015-06-17
KR20150066486A (en) 2015-06-16
TW201538547A (en) 2015-10-16
TWI597300B (en) 2017-09-01
TW201536823A (en) 2015-10-01
TWI591085B (en) 2017-07-11
KR20150066487A (en) 2015-06-16
KR20150067066A (en) 2015-06-17
KR101780099B1 (en) 2017-09-19
KR101780097B1 (en) 2017-09-19
TW201538548A (en) 2015-10-16
TW201536822A (en) 2015-10-01
KR20150067069A (en) 2015-06-17
TW201538551A (en) 2015-10-16
KR20150067064A (en) 2015-06-17
KR101763010B1 (en) 2017-08-03
TWI532780B (en) 2016-05-11
TW201602214A (en) 2016-01-16
TWI596119B (en) 2017-08-21
KR20150067070A (en) 2015-06-17
KR101768289B1 (en) 2017-08-30
KR20150067071A (en) 2015-06-17
KR101780100B1 (en) 2017-09-19
KR20150066488A (en) 2015-06-16
TW201534652A (en) 2015-09-16
KR101763008B1 (en) 2017-08-14
KR20150067068A (en) 2015-06-17
TW201538550A (en) 2015-10-16
KR101780101B1 (en) 2017-09-19
KR101780098B1 (en) 2017-09-19
KR20150067067A (en) 2015-06-17
KR20150067065A (en) 2015-06-17
TW201534651A (en) 2015-09-16
TWI586692B (en) 2017-06-11
KR101768291B1 (en) 2017-08-17
TWI596125B (en) 2017-08-21
TW201538549A (en) 2015-10-16
TWI596152B (en) 2017-08-21
KR20150067074A (en) 2015-06-17
KR101832025B1 (en) 2018-02-23

Similar Documents

Publication Publication Date Title
TWI557173B (en) Block copolymer
TWI609029B (en) Block copolymer
JP6334706B2 (en) Block copolymer
JP6432846B2 (en) Block copolymer
EP3078688B1 (en) Block copolymer
JP6496318B2 (en) Block copolymer
JP2016539239A (en) Block copolymer
JP6402867B2 (en) Block copolymer
JP2019534351A (en) Block copolymer
KR102097819B1 (en) Block copolymer
KR102096274B1 (en) Block copolymer