TWI596124B - Block copolymer - Google Patents

Block copolymer Download PDF

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Publication number
TWI596124B
TWI596124B TW103142777A TW103142777A TWI596124B TW I596124 B TWI596124 B TW I596124B TW 103142777 A TW103142777 A TW 103142777A TW 103142777 A TW103142777 A TW 103142777A TW I596124 B TWI596124 B TW I596124B
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Taiwan
Prior art keywords
block
block copolymer
carbon atoms
chain
atom
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TW103142777A
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Chinese (zh)
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TW201538546A (en
Inventor
金廷根
李政圭
李濟權
李美宿
朴魯振
具世真
崔銀英
吳誠濬
尹聖琇
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Lg化學股份有限公司
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    • C08F293/00Macromolecular compounds obtained by polymerisation on to a macromolecule having groups capable of inducing the formation of new polymer chains bound exclusively at one or both ends of the starting macromolecule
    • C08F293/005Macromolecular compounds obtained by polymerisation on to a macromolecule having groups capable of inducing the formation of new polymer chains bound exclusively at one or both ends of the starting macromolecule using free radical "living" or "controlled" polymerisation, e.g. using a complexing agent
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    • C08F212/02Monomers containing only one unsaturated aliphatic radical
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    • C08F212/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02Monomers containing only one unsaturated aliphatic radical
    • C08F212/04Monomers containing only one unsaturated aliphatic radical containing one ring
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    • C08F212/02Monomers containing only one unsaturated aliphatic radical
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    • C08F212/02Monomers containing only one unsaturated aliphatic radical
    • C08F212/04Monomers containing only one unsaturated aliphatic radical containing one ring
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    • C08F220/02Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10Esters
    • C08F220/26Esters containing oxygen in addition to the carboxy oxygen
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    • C09D153/00Coating compositions based on block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bonds; Coating compositions based on derivatives of such polymers
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
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    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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    • G03F7/004Photosensitive materials
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    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
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    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16Coating processes; Apparatus therefor
    • G03F7/162Coating on a rotating support, e.g. using a whirler or a spinner
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00388Etch mask forming
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    • B81MICROSTRUCTURAL TECHNOLOGY
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    • B81C1/00436Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00523Etching material
    • B81C1/00531Dry etching
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00Manufacture or treatment of microstructural devices or systems
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    • B81C2201/0101Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0147Film patterning
    • B81C2201/0149Forming nanoscale microstructures using auto-arranging or self-assembling material
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
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    • C07C2601/00Systems containing only non-condensed rings
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    • C08F220/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
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    • C08F220/10Esters
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Description

嵌段共聚物 Block copolymer

本發明關於嵌段共聚物及其應用。 This invention relates to block copolymers and their use.

嵌段共聚物具有分子結構,其中具有在化學上彼此不同的結構之聚合物子單元係以共價鍵連結。嵌段共聚物能夠經由相分離而形成週期性對準之結構,諸如球體、圓柱體或片層。由嵌段共聚物之自組裝所形成的結構之結構域大小可在寬廣的範圍內調整,且可製備各種形狀的結構。因此,該等可被利用於以微影術之圖案形成方法、各種磁性記錄媒體或新一代奈米裝置中,諸如金屬點、量子點或奈米線、高密度磁性儲存媒體、及類似者。 The block copolymer has a molecular structure in which polymer subunits having a structure different from each other chemically are linked by a covalent bond. The block copolymer is capable of forming a periodically aligned structure, such as a sphere, cylinder or sheet, via phase separation. The domain size of the structure formed by self-assembly of the block copolymer can be adjusted over a wide range, and structures of various shapes can be prepared. Thus, these can be utilized in lithography patterning methods, various magnetic recording media or next generation nanodevices such as metal dots, quantum dots or nanowires, high density magnetic storage media, and the like.

本發明提供嵌段共聚物、包括嵌段共聚物之聚合物層、形成聚合物層之方法及圖案形成方法。 The present invention provides a block copolymer, a polymer layer including the block copolymer, a method of forming a polymer layer, and a pattern forming method.

嵌段共聚物可包括第一嵌段和不同於第一嵌段的第二嵌段。嵌段共聚物可為僅包括上述第一和第二嵌段之二嵌段共聚物或可為除了第一和第二嵌段以外還包括額外的嵌段之嵌段共聚物。 The block copolymer can include a first block and a second block different from the first block. The block copolymer may be a diblock copolymer comprising only the first and second blocks described above or may be a block copolymer comprising an additional block in addition to the first and second blocks.

嵌段共聚物可經相分離,因為其包含二或多個彼此經由共價鍵連結之聚合物鏈。在本發明中,因為嵌段共聚物滿足至少一個如下述之參數,所以可非常有效地發生相分離,且因此其可以微相分離形成奈米級結構。根據本發明,藉由控制大小(諸如分子量或嵌段之間的相對比率)可自由地調整奈米結構的大小或形狀。嵌段共聚物可藉由上述而自由地形成各種大小的相分離之結構,諸如球體、圓柱體、五角二十四面體(gyroid)、片層和倒置結構、及類似者。本發明者發現若嵌段共聚物滿足下述參數中之至少一個參數,則可大幅改進如上述之自組裝性質及相分離性質。經確認有可能藉由使嵌段共聚物滿足適當的參數而使嵌段共聚物顯示垂直對準性質。如本文所使用之術語〝垂直對準性質〞可指嵌段共聚物之對準性質且可指其中由嵌段共聚物所形成之奈米級結構係垂直對準基板的方向之例子。控制嵌段共聚物之自組裝結構相對於各種基板垂直或平行對準的技術為嵌段共聚物之實際應用的重大部分。嵌段共聚物層中的奈米級結構之對準方向按慣例係取決於形成嵌段共聚物的嵌段之中的何種嵌段暴露於表面或空氣。一般而言,因為許多基板為極性及空氣為非極 性,所以具有比嵌段共聚物中的其他嵌段更高極性之嵌段在基板上濕潤及具有比嵌段共聚物中的其他嵌段更低極性之嵌段濕潤關於空氣之間的界面。提出許多為了使嵌段共聚物之彼此具有不同性質的嵌段同時濕潤基板的技術,且最典型的方法係藉由製備中性表面來控制對準。然而,在一個實施態樣中,藉由控制下述參數可使嵌段共聚物相對於基板垂直對準,而不進行達成垂直對準之按慣例已知的處理,包括中性表面處理。例如,根據本發明的一個實施態樣之嵌段共聚物可在未進行任何預處理之疏水性表面及親水性表面二者上顯示垂直對準性質。再者,在另外的實施態樣中,關於大面積的垂直對準可藉由熱退火而於短時間內達成。 The block copolymer can be phase separated because it comprises two or more polymer chains joined to each other via a covalent bond. In the present invention, since the block copolymer satisfies at least one of the following parameters, phase separation can occur very efficiently, and thus it can be microphase-separated to form a nano-scale structure. According to the present invention, the size or shape of the nanostructure can be freely adjusted by controlling the size such as the molecular weight or the relative ratio between the blocks. The block copolymer can freely form phase-separated structures of various sizes by the above, such as spheres, cylinders, gyroids, sheets and inverted structures, and the like. The inventors have found that if the block copolymer satisfies at least one of the following parameters, the self-assembly properties and phase separation properties as described above can be greatly improved. It has been confirmed that it is possible to cause the block copolymer to exhibit vertical alignment properties by satisfying the block copolymer with appropriate parameters. The term "vertical alignment property" as used herein may refer to the alignment properties of a block copolymer and may refer to an example in which the nanostructure formed by the block copolymer is oriented perpendicular to the substrate. Techniques for controlling the vertical or parallel alignment of self-assembled structures of block copolymers with respect to various substrates are a significant part of the practical application of block copolymers. The alignment direction of the nanoscale structure in the block copolymer layer is conventionally dependent on which of the blocks forming the block copolymer is exposed to the surface or air. In general, because many substrates are polar and air is non-polar The block, which has a higher polarity than the other blocks in the block copolymer, wets on the substrate and has a lower polarity than the other blocks in the block copolymer wets the interface between the air. A number of techniques have been proposed for simultaneously wetting substrates with blocks having different properties of the block copolymers, and the most typical method is to control alignment by preparing a neutral surface. However, in one embodiment, the block copolymer can be vertically aligned relative to the substrate by controlling the following parameters without conventionally known processing to achieve vertical alignment, including neutral surface treatment. For example, a block copolymer according to one embodiment of the present invention can exhibit vertical alignment properties on both a hydrophobic surface and a hydrophilic surface that have not been subjected to any pretreatment. Furthermore, in other embodiments, vertical alignment with respect to large areas can be achieved in a short time by thermal annealing.

嵌段共聚物可在XRD(X射線繞射)分析中展現至少一個在散射向量(q)之預定範圍內的峰。 The block copolymer can exhibit at least one peak within a predetermined range of the scattering vector (q) in an XRD (X-ray diffraction) analysis.

在一個實施態樣中,當進行XRD時,嵌段共聚物可顯示至少一個在從0.5奈米-1至10奈米-1之散射向量(q值)範圍內的峰。在其他的實施態樣中,在其中觀察到至少一個峰的散射向量(q值)範圍可為從0.7奈米-1或更大,0.9奈米-1或更大,1.1奈米-1或更大,1.3奈米-1或更大,或1.5奈米-1或更大。在其他的實施態樣中,在其中觀察到至少一個峰的散射向量(q值)範圍可為從9奈米-1或更小,8奈米-1或更小,7奈米-1或更小,6奈米-1或更小,5奈米-1或更小,4奈米-1或更小,3.5奈米-1或更小,或3奈米-1或更小。 In one embodiment aspect, when XRD, the block copolymer can display at least one peak at 0.5 nm from the scattering vector (q value) of 1 to 10 nm -1 range. In other embodiments, the scattering vector (q value) in which at least one peak is observed may range from 0.7 nm -1 or greater, 0.9 nm -1 or greater, 1.1 nm -1 or Larger, 1.3 nm -1 or greater, or 1.5 nm -1 or greater. In other embodiments, the scattering vector (q value) in which at least one peak is observed may range from 9 nm to 1 or less, 8 nm to 1 or less, 7 nm to 1 or Smaller, 6 nm -1 or less, 5 nm -1 or less, 4 nm -1 or less, 3.5 nm -1 or less, or 3 nm -1 or less.

在上述散射向量(q)範圍內觀察到的峰之FWHM(半峰全寬)可為從0.2奈米-1至0.9奈米-1。在另一實施態樣中,FWHM可為0.25奈米-1或更大,0.3奈米-1或更大,或0.4奈米-1或更大。在另一實施態樣中,FWHM可為0.85奈米-1或更小,0.8奈米-1或更小,或0.75奈米-1或更小。 FWHM of the peak observed in the scattering vector (q) range (FWHM) can be from 0.2 nm -1 to 0.9 nm -1. In another embodiment, the FWHM can be 0.25 nm -1 or greater, 0.3 nm -1 or greater, or 0.4 nm -1 or greater. In another embodiment, the FWHM can be 0.85 nm -1 or less, 0.8 nm -1 or less, or 0.75 nm -1 or less.

如本文所使用之術語〝FWHM(半峰全寬)〞可指顯示強度為最大強度的一半之峰的寬度(在散射向量(q)之間的差距)。 The term 〝FWHM (full width at half maximum) as used herein may refer to the width of the peak (the difference between the scattering vectors (q)) showing the intensity being half of the maximum intensity.

在XRD分析中,散射向量(q)及FWHM為關於下述XRD分析的結果之數值分析的值,其中使用最小平方技術。在上述方法中,關於XRD圖案中的峰輪廓之高斯擬合(Gaussian fitting)係在具有最低強度的XRD繞射圖案之位置成為基準線且將最低強度轉換成零之狀態下進行,且接著自高斯擬合的結果獲得散射向量(q)及FWHM。高斯擬合之R平方為至少0.9或更大,0.92或更大,0.94或更大,或0.96或更大。已知自XRD分析獲得上述訊息之方法,且例如可使用數值分析程式,諸如the origin。 In the XRD analysis, the scattering vectors (q) and FWHM are values for numerical analysis of the results of the XRD analysis described below, using the least squares technique. In the above method, the Gaussian fitting of the peak profile in the XRD pattern is performed in a state where the position of the XRD diffraction pattern having the lowest intensity becomes the reference line and the lowest intensity is converted into zero, and then The results of Gaussian fitting obtain the scattering vector (q) and FWHM. The Gaussian fit has an R square of at least 0.9 or greater, 0.92 or greater, 0.94 or greater, or 0.96 or greater. A method of obtaining the above information from XRD analysis is known, and for example, a numerical analysis program such as the origin can be used.

顯示具有在上述散射向量(q)範圍內的上述FWHM之峰的嵌段共聚物可包括適合於自組裝的結晶部位。顯示具有在上述散射向量(q)範圍內的上述FWHM之峰的嵌段共聚物可顯示極佳自組裝性質。 The block copolymer showing a peak of the above FWHM having the above-described scattering vector (q) may include a crystallized site suitable for self-assembly. A block copolymer showing a peak of the above FWHM in the range of the above scattering vector (q) can exhibit excellent self-assembly properties.

XRD分析可藉由將X-射線通過嵌段共聚物樣 品且接著根據散射向量測量散射強度來進行。可進行關於沒有任何特定的預處理之嵌段共聚物的XRD分析,且例如該分析可藉由將嵌段共聚物在適當的條件下乾燥且接著以X-射線通過來進行。可使用其垂直大小為0.023毫米及其水平大小為0.3毫米之X射線作為X射線。藉由使用測量裝置(例如,2D marCCD)獲得成為影像的自樣品散射之2D繞射圖案,且接著進行關於所獲得的繞射圖案之上述擬合,以便於獲得散射向量和FWHM及類似者。 XRD analysis can be performed by passing X-rays through a block copolymer And then proceeding by measuring the scattering intensity from the scattering vector. XRD analysis of the block copolymer without any particular pretreatment can be performed, and for example, the analysis can be carried out by drying the block copolymer under appropriate conditions and then passing X-rays. X-rays having a vertical size of 0.023 mm and a horizontal size of 0.3 mm can be used as the X-rays. A 2D diffraction pattern that is scattered from the sample as an image is obtained by using a measuring device (for example, 2D marCCD), and then the above-described fitting with respect to the obtained diffraction pattern is performed in order to obtain a scattering vector and FWHM and the like.

上述參數可藉由控制嵌段共聚物之結構來實現。 The above parameters can be achieved by controlling the structure of the block copolymer.

例如,滿足上述參數之嵌段共聚物可包括在第一嵌段或第二嵌段中的側鏈。為了方便解釋,在下文可將包含側鏈的嵌段稱為第一嵌段。 For example, a block copolymer that satisfies the above parameters may include a side chain in the first block or the second block. For convenience of explanation, a block including a side chain may be referred to as a first block hereinafter.

如本文所使用之術語〝形成鏈的原子〞係指形成連接至嵌段共聚物之側鏈的原子及形成側鏈之線性結構的原子。側鏈可具有線性或分枝結構;然而,形成鏈的原子之數量僅以形成最長直鏈的原子之數量計算。因此,在其中形成鏈的原子為碳原子之例子中,未將其他原子計算為形成鏈的原子之數量,諸如連結至碳原子之氫原子及類似者。再者,在分枝鏈之例子中,形成鏈的原子之數量為形成最長鏈的原子之數量。例如,鏈為正戊基,所有形成鏈的原子為碳原子且其數量為5。若鏈為2-甲基戊基,則所有形成鏈的原子亦為碳原子且其數量為5。形成鏈的原子可為碳、氧、硫或氮及類似者,且適當的形成鏈的原 子可為碳、氧或氮;或碳或氧。形成鏈的原子之數量可為8或更多,9或更多,10或更多,11或更多,或12或更多。形成鏈的原子之數量可為30或更少,25或更少,20或更少,或16或更少。 As used herein, the term "anthracene of a fluorene-forming chain" refers to an atom that forms an atom attached to a side chain of a block copolymer and a linear structure that forms a side chain. The side chains may have a linear or branched structure; however, the number of atoms forming the chain is calculated only by the number of atoms forming the longest straight chain. Therefore, in the case where the atom in which the chain is formed is a carbon atom, the other atoms are not counted as the number of atoms forming the chain, such as a hydrogen atom bonded to a carbon atom and the like. Furthermore, in the case of a branched chain, the number of atoms forming a chain is the number of atoms forming the longest chain. For example, the chain is n-pentyl, all of the atoms forming the chain are carbon atoms and the number is 5. If the chain is a 2-methylpentyl group, all of the atoms forming the chain are also carbon atoms and the number is 5. The atoms forming the chain may be carbon, oxygen, sulfur or nitrogen and the like, and the proper formation of the chain The sub may be carbon, oxygen or nitrogen; or carbon or oxygen. The number of atoms forming the chain may be 8 or more, 9 or more, 10 or more, 11 or more, or 12 or more. The number of atoms forming the chain may be 30 or less, 25 or less, 20 or less, or 16 or less.

在另一實施態樣中,在滿足上述參數之嵌段共聚物的第一嵌段和第二嵌段中之一或二者可包括至少芳族結構。第一嵌段和第二嵌段二者皆可包括芳族結構,且在此例子中,在第一嵌段中的芳族結構可與第二嵌段中的芳族結構相同或不同。再者,在滿足此文件中所述參數之嵌段共聚物的第一和第二嵌段中之至少一個嵌段可包括如下述之側鏈或至少一個鹵素原子,且此種側鏈或至少一個鹵素原子可經芳族結構取代。嵌段共聚物可包括二或更多個嵌段。 In another embodiment, one or both of the first block and the second block of the block copolymer satisfying the above parameters may include at least an aromatic structure. Both the first block and the second block may comprise an aromatic structure, and in this example, the aromatic structure in the first block may be the same or different than the aromatic structure in the second block. Further, at least one of the first and second blocks of the block copolymer satisfying the parameters described in this document may include a side chain or at least one halogen atom as described below, and such a side chain or at least A halogen atom may be substituted by an aromatic structure. The block copolymer can include two or more blocks.

如所述,嵌段共聚物的第一嵌段及/或第二嵌段可包括芳族結構。此種芳族結構可包括在第一嵌段和第二嵌段中之一或二者中。在其中兩種嵌段皆包括芳族結構之例子中,在第一嵌段中的芳族結構可與第二嵌段中的芳族結構相同或不同。 As stated, the first block and/or the second block of the block copolymer can comprise an aromatic structure. Such an aromatic structure can be included in one or both of the first block and the second block. In examples where both of the blocks include an aromatic structure, the aromatic structure in the first block may be the same or different than the aromatic structure in the second block.

如本文所使用之術語〝芳族結構〞可指芳基或伸芳基,且可指自包括一個苯環結構或其中至少兩個苯環以共享一或兩個碳原子或以隨意的連結基連結之結構的化合物,或化合物的衍生物所衍生之單價或二價取代基。芳基或伸芳基可為具有6至30,6至25,6至21,6至18,或6至13個碳原子之芳基,除非另有其他定義。自 苯、萘、偶氮苯、蒽、菲、稠四苯、芘、苯並芘及類似者所衍生之單價或二價取代基可經例證為芳基或伸芳基。 The term "fluorene-aromatic structure" as used herein may mean aryl or extended aryl, and may be taken to include a benzene ring structure or at least two benzene rings thereof to share one or two carbon atoms or a random linking group. A monovalent or divalent substituent derived from a compound of a linked structure, or a derivative of a compound. The aryl or extended aryl group may be an aryl group having 6 to 30, 6 to 25, 6 to 21, 6 to 18, or 6 to 13 carbon atoms unless otherwise defined. from Monovalent or divalent substituents derived from benzene, naphthalene, azobenzene, anthracene, phenanthrene, fused tetraphenyl, anthracene, benzopyrene and the like may be exemplified by aryl or extended aryl groups.

芳族結構可為包括在嵌段之主鏈中的結構或可為作為側鏈連結至嵌段之主鏈的結構。例如,適當地調整可包括在各嵌段中的芳族結構可實現對參數的控制。 The aromatic structure may be a structure included in the main chain of the block or may be a structure in which a side chain is bonded to the main chain of the block. For example, the adjustment of the parameters can be achieved by appropriately adjusting the aromatic structure that can be included in each block.

例如,為了控制參數,可將具有8或更多個形成鏈的原子之鏈作為側鏈連接至嵌段共聚物的第一嵌段。在本文件中,術語〝側鏈〞及術語〝鏈〞可表明相同的主題。在其中第一嵌段包括芳族結構之例子中,可將鏈連結至芳族結構。 For example, to control the parameters, a chain having 8 or more chains forming an atom may be attached as a side chain to the first block of the block copolymer. In this document, the terms 〝 side chain 〝 and the term 〝 chain 〞 can indicate the same subject. In examples where the first block comprises an aromatic structure, the chain can be attached to an aromatic structure.

側鏈可為連結至聚合物之主鏈的鏈。如所述,側鏈可為包括8或更多,9或更多,10或更多,11或更多,或12或更多個形成鏈的原子之鏈。形成鏈的原子之數量可為30或更少,25或更少,20或更少,或16或更少。形成鏈的原子可為碳、氧、氮或硫,或適合為碳或氧。 The side chain can be a chain that is attached to the backbone of the polymer. As noted, the side chains can be chains comprising 8 or more, 9 or more, 10 or more, 11 or more, or 12 or more chains forming atoms. The number of atoms forming the chain may be 30 or less, 25 or less, 20 or less, or 16 or less. The atoms forming the chain can be carbon, oxygen, nitrogen or sulfur, or suitably carbon or oxygen.

側鏈可為烴鏈,諸如烷基、烯基或炔基。在烴鏈中的至少一個碳原子可經硫原子、氧原子或氮原子置換。 The side chain can be a hydrocarbon chain such as an alkyl, alkenyl or alkynyl group. At least one carbon atom in the hydrocarbon chain may be replaced by a sulfur atom, an oxygen atom or a nitrogen atom.

在其中側鏈連結至芳族結構之例子中,鏈可直接連結至芳族結構或可經由連結基連結至芳族結構。連結基可為氧原子、硫原子、-NR1-、-S(=O)2-、羰基、伸烷基、伸烯基、伸炔基、-C(=O)-X1-或-X1-C(=O)-。在上式中,R1可為氫、烷基、烯基、炔基、烷氧基或芳基,且 X1可為單鍵、氧原子、硫原子、-NR2-、-S(=O)2-、伸烷基、伸烯基或伸炔基,且R2可為氫、烷基、烯基、炔基、烷氧基或芳基。適當的連結基可為氧原子。側鏈可經由例如氧原子或氮連結至芳族結構。 In examples where a side chain is attached to an aromatic structure, the chain may be attached directly to the aromatic structure or may be attached to the aromatic structure via a linking group. The linking group may be an oxygen atom, a sulfur atom, -NR 1 -, -S(=O) 2 -, carbonyl, alkylene, alkenyl, alkynyl, -C(=O)-X 1 - or - X 1 -C(=O)-. In the above formula, R 1 may be hydrogen, alkyl, alkenyl, alkynyl, alkoxy or aryl, and X 1 may be a single bond, an oxygen atom, a sulfur atom, -NR 2 -, -S (= O) 2 -, alkylene, alkenyl or alkynyl, and R 2 may be hydrogen, alkyl, alkenyl, alkynyl, alkoxy or aryl. A suitable linking group can be an oxygen atom. The side chain can be attached to the aromatic structure via, for example, an oxygen atom or nitrogen.

在其中芳族結構係作為側鏈連結至嵌段之主鏈的例子中,芳族結構亦可直接連結至主鏈或可經由連結基連結至主鏈。連結基可為氧原子、硫原子、-S(=O)2-、羰基、伸烷基、伸烯基、伸炔基、-C(=O)-X1-或-X1-C(=O)-。在上式中,X1可為單鍵、氧原子、硫原子、-S(=O)2-、伸烷基、伸烯基或伸炔基。使芳族結構鍵結至主鏈之適當的連結基可為-C(=O)-O-或-O-C(=O)-,但是不限於此。 In an example in which the aromatic structure is bonded as a side chain to the main chain of the block, the aromatic structure may be directly bonded to the main chain or may be bonded to the main chain via a linking group. The linking group may be an oxygen atom, a sulfur atom, -S(=O) 2 -, carbonyl, alkylene, alkenyl, alkynyl, -C(=O)-X 1 - or -X 1 -C ( =O)-. In the above formula, X 1 may be a single bond, an oxygen atom, a sulfur atom, -S(=O) 2 -, an alkylene group, an extended alkenyl group or an extended alkynyl group. A suitable linking group for bonding the aromatic structure to the main chain may be -C(=O)-O- or -OC(=O)-, but is not limited thereto.

在另一實施態樣中,在嵌段共聚物的第一嵌段及/或第二嵌段中之芳族結構可包括1或更多,2或更多,3或更多,4或更多,或5或更多個鹵素原子。鹵素原子之數量可為30或更少,25或更少,20或更少,15或更少,或10或更少。鹵素原子可為氟或氯;且可使用氟。包含含有鹵素原子的芳族結構之嵌段可藉由與其他嵌段適當的交互作用而有效地形成相分離結構。 In another embodiment, the aromatic structure in the first block and/or the second block of the block copolymer may comprise 1 or more, 2 or more, 3 or more, 4 or more. Many, or 5 or more halogen atoms. The number of halogen atoms may be 30 or less, 25 or less, 20 or less, 15 or less, or 10 or less. The halogen atom may be fluorine or chlorine; and fluorine may be used. A block comprising an aromatic structure containing a halogen atom can effectively form a phase-separated structure by appropriate interaction with other blocks.

具有6至30,6至25,6至21,6至18,或6至13個碳原子之芳族結構可經例證為包括鹵素原子之芳族結構,但是不限於此。 The aromatic structure having 6 to 30, 6 to 25, 6 to 21, 6 to 18, or 6 to 13 carbon atoms may be exemplified as an aromatic structure including a halogen atom, but is not limited thereto.

為了實現適當的相分離,在其中第一和第二嵌段二者包括芳族結構之例子中,第一嵌段可包括不含有 鹵素原子之芳族結構及第二嵌段可包括含有鹵素原子之芳族結構。再者,第一嵌段之芳族結構可包括直接或經由包括氧或氮原子之連結基連結的側鏈。 In order to achieve proper phase separation, in an example in which both the first and second blocks comprise an aromatic structure, the first block may include no The aromatic structure of the halogen atom and the second block may include an aromatic structure containing a halogen atom. Further, the aromatic structure of the first block may include a side chain linked directly or via a linking group including an oxygen or nitrogen atom.

在其中嵌段共聚物包括具有側鏈之嵌段的例子中,嵌段可為以例如式1表示之嵌段。 In the example in which the block copolymer includes a block having a side chain, the block may be a block represented by, for example, Formula 1.

在式1中,R可為氫或具有1至4個碳原子之烷基,X可為單鍵、氧原子、硫原子、-S(=O)2-、羰基、伸烷基、伸烯基、伸炔基、-C(=O)-X1-或-X1-C(=O)-,其中X1可為氧原子、硫原子、-S(=O)2-、伸烷基、伸烯基或伸炔基,且Y可為包括與具有8或更多個形成鏈的原子之鏈連結的環狀結構之單價取代基。 In Formula 1, R may be hydrogen or an alkyl group having 1 to 4 carbon atoms, and X may be a single bond, an oxygen atom, a sulfur atom, -S(=O) 2 -, a carbonyl group, an alkylene group, an alkylene group. Alkyl, alkynyl, -C(=O)-X 1 - or -X 1 -C(=O)-, wherein X 1 may be an oxygen atom, a sulfur atom, -S(=O) 2 -, a stretched alkyl A base, an alkenyl group or an alkynyl group, and Y may be a monovalent substituent including a cyclic structure linked to a chain having 8 or more chains forming an atom.

如本文所使用之術語〝單鍵〞可指其中沒有原子在對應位置上之例子。例如,若在式1中的X為單鍵,則可實現其中Y直接連結至聚合物鏈之結構。 The term 〝 single bond 如 as used herein may refer to an example in which no atom is in a corresponding position. For example, if X in Formula 1 is a single bond, a structure in which Y is directly bonded to a polymer chain can be realized.

如本文所使用之術語〝烷基〞可指具有1至20,1至16,1至12,1至8,或1至4個碳原子之線性、分枝或環狀烷基,除非另有其他定義,且烷基可隨意地經至少一個取代基取代。在其中側鏈為烷基之例子中, 烷基可包括8或更多,9或更多,10或更多,11或更多,或12或更多個碳原子,且在烷基中的碳原子數量可為30或更少,25或更少,20或更少,或16或更少。 The term "alkyl sulfonium" as used herein may mean a linear, branched or cyclic alkyl group having from 1 to 20, from 1 to 16, from 1 to 12, from 1 to 8, or from 1 to 4 carbon atoms, unless otherwise Other definitions, and the alkyl group may be optionally substituted with at least one substituent. In the case where the side chain is an alkyl group, The alkyl group may include 8 or more, 9 or more, 10 or more, 11 or more, or 12 or more carbon atoms, and the number of carbon atoms in the alkyl group may be 30 or less, 25 Or less, 20 or less, or 16 or less.

如本文所使用之術語〝烯基或炔基〞可指具有具有2至20,2至16,2至12,2至8,或2至4個碳原子之線性、分枝或環狀烯基或炔基,除非另有其他定義,且烯基或炔基可隨意地經至少一個取代基取代。在其中側鏈為烯基或炔基之例子中,烯基或炔基可包括8或更多,9或更多,10或更多,11或更多,或12或更多個碳原子,且在烯基或炔基中的碳原子數量可為30或更少,25或更少,20或更少,或16或更少。 The term "decenyl or alkynyl" as used herein may mean a linear, branched or cyclic alkenyl group having from 2 to 20, 2 to 16, 2 to 12, 2 to 8, or 2 to 4 carbon atoms. Or alkynyl, unless otherwise defined, and the alkenyl or alkynyl group is optionally substituted with at least one substituent. In the case where the side chain is an alkenyl or alkynyl group, the alkenyl or alkynyl group may include 8 or more, 9 or more, 10 or more, 11 or more, or 12 or more carbon atoms, And the number of carbon atoms in the alkenyl or alkynyl group may be 30 or less, 25 or less, 20 or less, or 16 or less.

如本文所使用之術語〝伸烷基〞可指具有1至20,1至16,1至12,1至8,或1至4個碳原子之伸烷基,除非另有其他定義。伸烷基可具有線性、分枝或環狀結構,且可隨意地經至少一個取代基取代。 The term "alkyl" as used herein may refer to an alkylene group having 1 to 20, 1 to 16, 1 to 12, 1 to 8, or 1 to 4 carbon atoms unless otherwise defined. The alkylene group may have a linear, branched or cyclic structure and may be optionally substituted with at least one substituent.

如本文所使用之術語〝伸烯基或伸炔基〞可指具有2至20,2至16,2至12,2至8,或2至4個碳原子之伸烯基或伸炔基,除非另有其他定義。伸烯基或伸炔基可具有線性、分枝或環狀結構,且可隨意地經至少一個取代基取代。 The term stilbene or alkynyl hydrazide as used herein may mean an alkenyl or alkynyl group having 2 to 20, 2 to 16, 2 to 12, 2 to 8, or 2 to 4 carbon atoms. Unless otherwise defined. The alkenyl or alkynyl group may have a linear, branched or cyclic structure and may be optionally substituted with at least one substituent.

在另一實施態樣中,式1中的X可為-C(=O)O-或-OC(=O)-。 In another embodiment, X in Formula 1 can be -C(=O)O- or -OC(=O)-.

在式1中的Y為包括鏈的取代基,其可為包括例如具有6至18或6至12個碳原子之芳族結構的取代 基。在上式中,鏈可為具有8或更多,9或更多,10或更多,11或更多,或12或更多個碳原子之烷基。烷基可包括30或更少,25或更少,20或更少,或16或更少個原子。鏈可如上述直接連結至芳族結構或經由連結基連結至芳族結構。 Y in Formula 1 is a substituent including a chain, which may be a substituent including, for example, an aromatic structure having 6 to 18 or 6 to 12 carbon atoms base. In the above formula, the chain may be an alkyl group having 8 or more, 9 or more, 10 or more, 11 or more, or 12 or more carbon atoms. The alkyl group can include 30 or less, 25 or less, 20 or less, or 16 or fewer atoms. The chain may be attached directly to the aromatic structure as described above or to the aromatic structure via a linking group.

在另一實施態樣中,第一嵌段可以下式2表示。 In another embodiment, the first block can be represented by Formula 2.

在式2中,R可為氫原子或具有1至4個碳原子之烷基,X可為-C(=O)-O-,P可為具有6至12個碳原子之伸芳基,Q可為氧原子,Z為具有8或更多個形成鏈的原子之鏈。 In Formula 2, R may be a hydrogen atom or an alkyl group having 1 to 4 carbon atoms, X may be -C(=O)-O-, and P may be an extended aryl group having 6 to 12 carbon atoms. Q may be an oxygen atom, and Z is a chain having 8 or more atoms forming a chain.

在式2的另一實施態樣中,P可為伸苯基。Z亦可為具有9至20,9至18或9至16個碳原子之直鏈烷基。在其中P為伸苯基之例子中,Q可連結至伸苯基之對位位置上。烷基、伸芳基、伸苯基及鏈可隨意地經至少一個取代基取代。 In another embodiment of Formula 2, P can be a pendant phenyl group. Z may also be a linear alkyl group having 9 to 20, 9 to 18 or 9 to 16 carbon atoms. In the case where P is a phenylene group, Q may be bonded to the para position of the phenyl group. The alkyl group, the aryl group, the phenyl group and the chain may be optionally substituted with at least one substituent.

在其中嵌段共聚物包括含有芳族結構(其包含鹵素原子)的嵌段之例子中,嵌段可為以下式3表示之嵌段。 In the example in which the block copolymer includes a block containing an aromatic structure containing a halogen atom, the block may be a block represented by the following formula 3.

在式3中,X2可為單鍵、氧原子、硫原子、-S(=O)2-、伸烷基、伸烯基、伸炔基、-C(=O)-X1-或-X1-C(=O)-,其中X1為單鍵、氧原子、硫原子、-S(=O)2-、伸烷基、伸烯基或伸炔基,且W可為包括至少一個鹵素原子之芳基。 In Formula 3, X 2 may be a single bond, an oxygen atom, a sulfur atom, -S(=O) 2 -, an alkylene group, an alkenyl group, an alkynyl group, -C(=O)-X 1 - or -X 1 -C(=O)-, wherein X 1 is a single bond, an oxygen atom, a sulfur atom, -S(=O) 2 -, an alkylene group, an extended alkenyl group or an alkynyl group, and W may be included At least one aryl group of a halogen atom.

在式3的另一實施態樣中,X2可為單鍵或伸烷基。 In another embodiment of Formula 3, X 2 can be a single bond or an alkylene group.

在式3中,W之芳基可為具有6至12碳原子之芳基或苯基。芳基或苯基可包括1或更多,2或更多,3或更多,4或更多,或5或更多個鹵素原子。鹵素原子之數量可為30或更少,25或更少,20或更少,15或更少,或10或更少。可使用氟原子作為鹵素原子。 In Formula 3, the aryl group of W may be an aryl group having 6 to 12 carbon atoms or a phenyl group. The aryl or phenyl group may include 1 or more, 2 or more, 3 or more, 4 or more, or 5 or more halogen atoms. The number of halogen atoms may be 30 or less, 25 or less, 20 or less, 15 or less, or 10 or less. A fluorine atom can be used as the halogen atom.

在另一實施態樣中,式3之嵌段可以下式4表示。 In another embodiment, the block of Formula 3 can be represented by Formula 4 below.

[式4] [Formula 4]

在式4中,X2係與式3中之定義相同,且R1至R5可各自獨立為氫、烷基、鹵烷基或鹵素原子。在R1至R5中所包括的鹵素原子之數量為1或更多。 In Formula 4, the X 2 system is the same as defined in Formula 3, and R 1 to R 5 may each independently be a hydrogen, an alkyl group, a haloalkyl group or a halogen atom. The number of halogen atoms included in R 1 to R 5 is 1 or more.

在式4中,R1至R5可各自獨立為氫、具有1至4個碳原子之烷基、或具有1至4個碳原子之鹵烷基、或鹵素原子,且鹵素原子可為氟或氯。 In Formula 4, R 1 to R 5 may each independently be hydrogen, an alkyl group having 1 to 4 carbon atoms, or a haloalkyl group having 1 to 4 carbon atoms, or a halogen atom, and the halogen atom may be fluorine. Or chlorine.

在式4中,R1至R5可包括1或更多,2或更多,3或更多,4或更多,5或更多,或6或更多個鹵素原子。鹵素原子之數量的上限未受到特別的限制,且在R1至R5中的鹵素原子之數量可為例如12或更少,8或更少,或7或更少。 In Formula 4, R 1 to R 5 may include 1 or more, 2 or more, 3 or more, 4 or more, 5 or more, or 6 or more halogen atoms. The upper limit of the number of halogen atoms is not particularly limited, and the number of halogen atoms in R 1 to R 5 may be, for example, 12 or less, 8 or less, or 7 or less.

嵌段共聚物可以僅包括上述兩種嵌段,或可包括上述兩種嵌段中之一或二者與另一嵌段。 The block copolymer may include only the above two blocks, or may include one or both of the above two blocks and another block.

用於製備嵌段共聚物之方法未受到特別的限制。例如,嵌段共聚物可藉由活性自由基聚合反應(LRP)來製備。例如,有以下方法:諸如陰離子聚合反應,其中嵌段共聚物係在無機酸鹽(諸如鹼金屬或鹼土金屬之鹽)的 存在下使用有機稀土金屬錯合物或有機鹼金屬化合物作為聚合引發劑而合成;陰離子聚合反應,其中嵌段共聚物係在有機鋁化合物的存在下使用有機鹼金屬化合物作為聚合引發劑而合成;使用原子轉移自由基聚合劑作為聚合控制劑的原子轉移自由基聚合反應(ATRP);以電子轉移再生之活化劑(ATGET)進行的ATRP,其係在產生電子之有機或無機還原劑的存在下使用原子轉移自由基聚合劑作為聚合控制劑進行聚合反應;以連續活化劑再生之引發劑(ICAR)進行的ATRP;使用無機還原劑可逆式加成-開環鏈轉移劑之可逆式加成-開環鏈轉移(RAFT)聚合反應;及使用有機鉈化合物作為引發劑之方法,且可在上述方法之中選擇適當的方法。 The method for preparing the block copolymer is not particularly limited. For example, block copolymers can be prepared by living radical polymerization (LRP). For example, there are methods such as anionic polymerization in which a block copolymer is in a mineral acid salt such as an alkali metal or alkaline earth metal salt. In the presence of an organic rare earth metal complex or an organic alkali metal compound as a polymerization initiator; an anionic polymerization reaction in which a block copolymer is synthesized using an organic alkali metal compound as a polymerization initiator in the presence of an organoaluminum compound; Atom transfer radical polymerization (ATRP) using an atom transfer radical polymerizer as a polymerization control agent; ATRP by an electron transfer regeneration activator (ATGET) in the presence of an organic or inorganic reducing agent that generates electrons Polymerization using an atom transfer radical polymerization agent as a polymerization control agent; ATRP by a continuous activator regeneration initiator (ICAR); reversible addition using an inorganic reducing agent-reversible addition of a ring-opening chain transfer agent - Open-loop chain transfer (RAFT) polymerization; and a method using an organic ruthenium compound as an initiator, and an appropriate method can be selected among the above methods.

在一個實施態樣中,嵌段共聚物可藉由以下方法製備:包括將包含能夠在自由基引發劑及活性自由基聚合試劑的存在下形成嵌段之單體的材料以活性自由基聚合反應聚合。用於製備嵌段共聚物之方法可另外包括例如在非溶劑中沉澱出由上述方法所形成之聚合產物。 In one embodiment, the block copolymer can be prepared by a method comprising living a free radical polymerization of a material comprising a monomer capable of forming a block in the presence of a free radical initiator and a living radical polymerization reagent. polymerization. The method for preparing the block copolymer may additionally include, for example, precipitating the polymerization product formed by the above method in a non-solvent.

自由基引發劑的種類可考慮到聚合效率而予以適當地選擇,沒有特別的限制,且可使用偶氮化合物,諸如偶氮雙異丁腈(AIBN)或2,2’-偶氮雙-(2,4-二甲基戊腈),或過氧化物化合物,諸如苯甲醯基過氧化物(BPO)或二-三級丁基過氧化物(DTBP)。 The kind of the radical initiator can be appropriately selected in consideration of the polymerization efficiency, and is not particularly limited, and an azo compound such as azobisisobutyronitrile (AIBN) or 2,2'-azobis-( 2,4-Dimethylvaleronitrile), or a peroxide compound such as benzhydryl peroxide (BPO) or di-tertiary butyl peroxide (DTBP).

LRP可在溶劑中進行,諸如二氯甲烷、1,2-二氯乙烷、氯苯、二氯苯、苯、甲苯、丙酮、氯仿、四氫呋 喃、二噁烷、乙二醇二甲醚(monoglyme)、二甘醇二甲醚、二甲基甲醯胺、二甲基亞碸或二甲基乙醯胺。 LRP can be carried out in a solvent such as dichloromethane, 1,2-dichloroethane, chlorobenzene, dichlorobenzene, benzene, toluene, acetone, chloroform, tetrahydrofuran Methane, dioxane, monoglyme, diglyme, dimethylformamide, dimethylhydrazine or dimethylacetamide.

可使用例如醇(諸如甲醇、乙醇、正丙醇或異丙醇)、二醇(諸如乙二醇)或醚化合物(諸如正己烷、環己烷、正庚烷或石油醚)作為非溶劑,沒有限制。 As the non-solvent, for example, an alcohol such as methanol, ethanol, n-propanol or isopropanol, a diol such as ethylene glycol or an ether compound such as n-hexane, cyclohexane, n-heptane or petroleum ether can be used. no limit.

如上述之嵌段共聚物可展現極佳相分離性質及自組裝性質,且其垂直對準性質亦極佳。本發明者確認若嵌段共聚物另外滿足如下述參數之中至少一個參數,則可進一步改進上述性質。 The block copolymers as described above exhibit excellent phase separation properties and self-assembly properties, and their vertical alignment properties are also excellent. The inventors have confirmed that the above properties can be further improved if the block copolymer additionally satisfies at least one of the following parameters.

例如,嵌段共聚物可在疏水性表面上形成以掠角入射小角度X射線散射(grazing incidence small angle X ray scattering)(GISAXS)顯示面內相位繞射圖案的層。嵌段共聚物可在親水性表面上形成以掠角入射小角度X射線散射(GISAXS)顯示面內相位繞射圖案的層。 For example, the block copolymer can form a layer on the hydrophobic surface that exhibits an in-plane phase diffraction pattern at a grazing incidence small angle X ray scattering (GISAXS). The block copolymer can form a layer on the hydrophilic surface that exhibits an in-plane phase diffraction pattern at a grazing angle incidence small angle X-ray scattering (GISAXS).

如本文所使用之術語〝以掠角入射小角度X射線散射(GISAXS)顯示面內相位繞射圖案〞可指其中當進行GISAXS分析時在GISAXS繞射圖案上觀察到垂直於X座標之峰的例子。此種峰可藉由嵌段共聚物之垂直對準性質來確定。因此,顯示面內相位繞射圖案的嵌段共聚物顯示垂直對準性質。再者,若觀察到具有規律間隔的上述峰,則可進一步改進相分離效率。 As used herein, the term "grain angle incident small angle X-ray scattering (GISAXS) shows in-plane phase diffraction pattern 〞 may refer to a peak perpendicular to the X coordinate observed on the GISAXS diffraction pattern when performing GISAXS analysis. example. Such peaks can be determined by the vertical alignment properties of the block copolymer. Therefore, the block copolymer showing the in-plane phase diffraction pattern exhibits a vertical alignment property. Furthermore, if the above-mentioned peaks having regular intervals are observed, the phase separation efficiency can be further improved.

如本文所使用之術語〝垂直〞為考慮到誤差之術語,且例如其可包括在±10度,±8度,±6度,±4度,或±2度內的誤差。 The term "vertical" as used herein is a term that takes into account error and may, for example, include errors within ±10 degrees, ±8 degrees, ±6 degrees, ±4 degrees, or ±2 degrees.

能夠形成在疏水性及親水性表面二者上顯示面內相位繞射圖案的層之嵌段共聚物可在未進行任何誘導垂直對準之處理的各種表面上顯示垂直對準性質。如本文所使用之術語〝疏水性表面〞可指純化水之濕潤角係在從5度至20度之範圍內的表面。疏水性表面的實例可包括以食人魚溶液(piranha solution)、硫酸或氧電漿處理之聚矽氧(silicone)的表面,但不限於此。如本文所使用之術語〝親水性表面〞可指純化水之濕潤角係在從50度至70度之範圍內的表面。親水性表面的實例可包括以氟化氫理之聚矽氧、以六甲基二矽氮烷處理之聚矽氧、或以氧電漿處理之聚二甲基矽氧烷的表面,但不限於此。 A block copolymer capable of forming a layer exhibiting an in-plane phase diffraction pattern on both hydrophobic and hydrophilic surfaces can exhibit vertical alignment properties on various surfaces that are not subjected to any process that induces vertical alignment. The term "hydrophobic surface" as used herein may refer to a surface having a wet angle of purified water ranging from 5 degrees to 20 degrees. Examples of the hydrophobic surface may include a surface of a silicone treated with a piranha solution, sulfuric acid or oxygen plasma, but are not limited thereto. The term "hydrophilic surface" as used herein may refer to a surface having a wet angle of purified water ranging from 50 degrees to 70 degrees. Examples of the hydrophilic surface may include, but are not limited to, a polyfluorinated hydrogen fluoride, a polymethyloxy oxide treated with hexamethyldioxane, or a polydimethylsiloxane having a plasma treated with oxygen. .

在本文件中,可根據溫度改變的性質(諸如濕潤角)係在室溫下測量,除非另有其他定義。如本文所使用之術語〝室溫〞可指未加熱及冷卻的其自然狀態之溫度,且可指在從約10℃至30℃之範圍內,或約25℃或約23℃之溫度。 In this document, properties that vary according to temperature, such as wetting angle, can be measured at room temperature unless otherwise defined. The term "room temperature" as used herein may refer to the temperature of its natural state that is not heated and cooled, and may refer to a temperature ranging from about 10 ° C to 30 ° C, or about 25 ° C or about 23 ° C.

形成於疏水性或親水性表面上且在GISAXS上顯示面內相位繞射圖案的層可為進行熱退火的層。在一個實施態樣中,用於測量GISAXS的層係例如藉由以下方式製得:將藉由以嵌段共聚物於溶劑(例如,氟苯)中稀釋至約0.7重量%之濃度而製得的塗佈溶液塗佈於對應之疏水性或親水性表面上,以便使塗層具有約25奈米厚度及約2.25平方公分面積(寬度:1.5公分,長度:1.5公分),且接著對其進行熱退火。熱退火可藉由將層在160℃之溫 度下維持約1小時來進行。GISAXS可藉由以入射角在從0.12至0.23度之範圍內的X射線照射上述製備之層來測量。自層散射之繞射圖案可以習知的測量裝置(例如,2D marCCD)獲得。在本技術領域中已知自上述獲得的繞射圖案確認面內相位繞射圖案存在的技術。 The layer formed on the hydrophobic or hydrophilic surface and exhibiting the in-plane phase diffraction pattern on the GISAXS may be a layer that is thermally annealed. In one embodiment, the layer for measuring GISAXS is prepared, for example, by: diluting to a concentration of about 0.7% by weight of the block copolymer in a solvent (eg, fluorobenzene). The coating solution is applied to the corresponding hydrophobic or hydrophilic surface so that the coating has a thickness of about 25 nm and an area of about 2.25 square centimeters (width: 1.5 cm, length: 1.5 cm), and then Thermal annealing. Thermal annealing can be achieved by layering the layer at 160 ° C It is maintained for about 1 hour. GISAXS can be measured by irradiating the above prepared layer with X-rays having an incident angle in the range of from 0.12 to 0.23 degrees. The diffraction pattern from the layer scattering can be obtained by a conventional measuring device (for example, 2D marCCD). Techniques for confirming the presence of in-plane phase diffraction patterns from the diffraction patterns obtained above are known in the art.

在GISAXS中顯示上述峰之嵌段共聚物可顯示極佳自組裝性質,且可根據目標有效地控制該性質。 The block copolymer showing the above peak in GISAXS can exhibit excellent self-assembly properties, and can be effectively controlled according to the target.

如下文所述,在其中嵌段共聚物的至少一個嵌段包括側鏈之例子中,形成鏈的原子之數量(n)及自XRD分析所獲得的散射向量(q)可滿足以下的方程式。 As described below, in the example in which at least one block of the block copolymer includes a side chain, the number of atoms forming the chain (n) and the scattering vector (q) obtained from the XRD analysis can satisfy the following equation.

[方程式1] 3奈米-1~5奈米-1=nq/(2×π) [Equation 1] 3 nm -1 ~5 nm -1 = nq/(2×π)

在方程式1中,〝n〞為形成鏈的原子之數量,及〝q〞為XRD分析中觀察到的峰之散射向量之中最小的散射向量或觀察到具有最大面積的峰之散射向量。再者,在方程式1中的π為圓周對其直徑之比率。 In Equation 1, 〝n〞 is the number of atoms forming the chain, and 〝q〞 is the smallest scattering vector among the scattering vectors of the peaks observed in the XRD analysis or the scattering vector of the peak having the largest area observed. Furthermore, π in Equation 1 is the ratio of the circumference to its diameter.

在以上方程式1中的散射向量及類似者為與XRD分析中所述者相同的方法獲得的值。 The scattering vector and the like in Equation 1 above are values obtained by the same method as described in the XRD analysis.

以方程式1之值取代的散射值可為在從0.5奈米-1至10奈米-1之範圍內的散射值。在另一實施態樣中,以方程式1之值取代的散射值可為在從0.5奈米-1至10奈米-1之範圍內的散射值。在另一實施態樣中,以方程式1之值取代的散射值可為0.7奈米-1或更大,0.9奈米-1或更大,1.1奈米-1或更大,1.3奈米-1或更大,或1.5奈米-1 或更大。在另一實施態樣中,以方程式1之值取代的散射值可為9奈米-1或更小,8奈米-1或更小,7奈米-1或更小,6奈米-1或更小,5奈米-1或更小,4奈米-1或更小,3.5奈米-1或更小,或3奈米-1或更小。 The value of Equation 1 can be substituted scatter values in the range from 0.5 nm to 10 nm -1 -1 of scatter values. In another aspect of the embodiment, the value of Equation 1 can be substituted scatter values in the range from 0.5 nm to 10 nm -1 -1 of scatter values. In another embodiment, the scatter value substituted with the value of Equation 1 can be 0.7 nm -1 or greater, 0.9 nm -1 or greater, 1.1 nm -1 or greater, 1.3 nm . 1 or greater, or 1.5 nm -1 or greater. In another aspect of the embodiment, the value of Equation 1 can be substituted scatter values -1 or less 9 nm, 8 nm-1 or less, 7 nm-1 or less, 6 nm - 1 or less, 5 nm -1 or less, 4 nm -1 or less, 3.5 nm -1 or less, or 3 nm -1 or less.

方程式1可表示在其中嵌段共聚物經自組裝且形成相分離之結構的狀態下在形成鏈的原子之數量與包括鏈的嵌段之間的間隔(D)之間的關係。若包括鏈的嵌段共聚物之形成鏈的原子之數量滿足方程式1,則改進以鏈展現的可結晶性,且因此可大幅改進相分離性質及垂直對準性質。在另一實施態樣中,在方程式1中的nq/(2×π)可為4.5奈米-1或更小。在上式中,在包括鏈的嵌段之間的間隔(D,單位:奈米)可以數值公式D=2×π/q計算。在上式中,〝D〞為嵌段之間的間隔(D,單位:奈米),及π和q係與方程式1中之定義相同。 Equation 1 may represent a relationship between the number of atoms forming a chain and the interval (D) between blocks including a chain in a state in which the block copolymer is self-assembled and forms a phase-separated structure. If the number of atoms forming the chain of the block copolymer including the chain satisfies Equation 1, the crystallizable property exhibited by the chain is improved, and thus the phase separation property and the vertical alignment property can be greatly improved. In another embodiment, nq/(2×π) in Equation 1 may be 4.5 nm -1 or less. In the above formula, the interval (D, unit: nanometer) between the blocks including the chain can be calculated by the numerical formula D = 2 × π / q. In the above formula, 〝D〞 is the interval between blocks (D, unit: nanometer), and π and q are the same as defined in Equation 1.

在本發明的一個實施態樣中,在第一和第二嵌段的表面能之間的差異絕對值可為10毫牛頓/公尺或更小,9毫牛頓/公尺或更小,8毫牛頓/公尺或更小,7.5毫牛頓/公尺或更小,或7毫牛頓/公尺或更小。在表面能之間的差異絕對值可為1.5毫牛頓/公尺或更大,2毫牛頓/公尺或更大,或2.5毫牛頓/公尺或更大。其中表面能之間的差異絕對值係在上述範圍內的第一和第二嵌段經由共價鍵連結之結構可由於適當的不相容性而以相分離實現有效的微相分離。在上文中,第一嵌段可為如上述之具有鏈的嵌段。 In one embodiment of the invention, the absolute difference between the surface energies of the first and second blocks may be 10 millinewtons per meter or less, 9 millinewtons per meter or less, 8 MilliNewtons/meter or less, 7.5 millinewtons/meter or less, or 7 millinewtons/meter or less. The absolute difference between the surface energies can be 1.5 millinewtons per meter or more, 2 millinewtons per meter or more, or 2.5 millinewtons per meter or more. The structure in which the first and second blocks in which the absolute difference between the surface energies are within the above range via the covalent bond can achieve effective microphase separation by phase separation due to appropriate incompatibility. In the above, the first block may be a block having a chain as described above.

表面能可使用液滴形狀分析儀(由KRUSS,Co.所製造的DSA100產品)測量。特定言之,表面能可以關於藉由以下方式所製得的層來測量:將藉由以欲測量之樣品(嵌段共聚物或均聚物)於氟苯中稀釋至約2重量%之固體含量而製得的塗佈溶液塗佈於基板上,以便使塗層具有50奈米厚度及4平方公分之塗佈面積(寬度:2公分,長度:2公分);將塗層在室溫下經約1小時乾燥;且接著在160℃進行約1小時的熱退火。在進行熱退火之後,將已知表面張力的去離子水滴在層上且接著測量接觸角。將獲得去離子水的接觸角之上述方法重複5次,且計算所獲得的5個接觸角之平均值。同樣地,在進行熱退火之後,將已知表面張力的二碘甲烷滴在層上且接著測量接觸角。將獲得二碘甲烷的接觸角之上述方法重複5次,且計算所獲得的5個接觸角之平均值。在此之後,表面能可藉由使用以去離子水及二碘甲烷所獲得的接觸角平均值經由Owens-Wendt-Rabel-Kaelble方法取代關於溶劑的表面張力之值(Strom值)而獲得。在嵌段共聚物中的各嵌段之表面能可藉由使用上述方法以相對於由形成對應嵌段之單體所製備的均聚物而獲得。 The surface energy can be measured using a droplet shape analyzer (DSA100 product manufactured by KRUSS, Co.). In particular, the surface energy can be measured with respect to the layer produced by diluting to about 2% by weight solids in fluorobenzene with the sample to be measured (block copolymer or homopolymer) The coating solution prepared by the content is applied on the substrate so that the coating has a coating area of 50 nm and 4 cm 2 (width: 2 cm, length: 2 cm); coating at room temperature Drying is carried out for about 1 hour; and then thermal annealing is carried out at 160 ° C for about 1 hour. After the thermal annealing, a deionized water droplet of known surface tension is placed on the layer and then the contact angle is measured. The above method of obtaining the contact angle of deionized water was repeated 5 times, and the average of the obtained 5 contact angles was calculated. Similarly, after thermal annealing, a known surface tension of diiodomethane was dropped on the layer and then the contact angle was measured. The above method of obtaining the contact angle of diiodomethane was repeated 5 times, and the average of the obtained 5 contact angles was calculated. After that, the surface energy can be obtained by replacing the value of the surface tension of the solvent (Strom value) by the Owens-Wendt-Rabel-Kaelble method by using the average value of the contact angle obtained with deionized water and diiodomethane. The surface energy of each block in the block copolymer can be obtained by using the above method in relation to a homopolymer prepared from monomers forming the corresponding block.

在其中嵌段共聚物包含上述鏈之例子中,包含鏈的嵌段可具有比其他嵌段更大的表面能。例如,若第一嵌段包含鏈,則第一嵌段可具有比第二嵌段更大的表面能。在此例子中,第一嵌段的表面能可在從約20毫牛頓/公尺至約40毫牛頓/公尺之範圍內。在另一實施態樣中, 第一嵌段的表面能可為約22毫牛頓/公尺或更大,約24毫牛頓/公尺或更大,約26毫牛頓/公尺或更大,或約28毫牛頓/公尺或更大。第一嵌段的表面能可為約38毫牛頓/公尺或更小,約36毫牛頓/公尺或更小,約34毫牛頓/公尺或更小,或約32毫牛頓/公尺或更小。包括上述第一嵌段且在嵌段的表面能之間顯示上述差異的此種嵌段共聚物可顯示極佳自組裝性質。 In the example where the block copolymer comprises the above chain, the block comprising the chain may have a greater surface energy than the other blocks. For example, if the first block comprises a chain, the first block can have a greater surface energy than the second block. In this example, the surface energy of the first block can range from about 20 millinewtons per meter to about 40 millinewtons per meter. In another embodiment, The surface energy of the first block can be about 22 millinewtons per meter or more, about 24 millinewtons per meter or more, about 26 millinewtons per meter or more, or about 28 millinewtons per meter. Or bigger. The surface energy of the first block can be about 38 millinewtons per meter or less, about 36 millinewtons per meter or less, about 34 millinewtons per meter or less, or about 32 millinewtons per meter. Or smaller. Such a block copolymer comprising the above first block and exhibiting the above difference between the surface energies of the blocks can exhibit excellent self-assembly properties.

在嵌段共聚物中,在第一和第二嵌段的密度之間的差異絕對值可為0.25克/立方公分或更大,0.3克/立方公分或更大,0.35克/立方公分或更大,0.4克/立方公分或更大,或0.45克/立方公分或更大。在密度之間的差異絕對值可為0.9克/立方公分或更小,0.8克/立方公分或更小,0.7克/立方公分或更小,0.65克/立方公分或更小,或0.6克/立方公分或更小。其中密度之間的差異絕對值係在上述範圍內的第一和第二嵌段經由共價鍵連結之結構可由於適當的不相容性而以相分離實現有效的微相分離。 In the block copolymer, the absolute difference between the densities of the first and second blocks may be 0.25 g/cm 3 or more, 0.3 g/cm 3 or more, 0.35 g/cm 3 or more. Large, 0.4 g/cm 3 or larger, or 0.45 g/cm 3 or larger. The absolute difference between the densities may be 0.9 g/cm 3 or less, 0.8 g/cm 3 or less, 0.7 g/cm 3 or less, 0.65 g/cm 3 or less, or 0.6 g/ Cubic centimeters or less. The structure in which the first and second blocks in which the absolute difference between the densities are in the above range and which are linked via a covalent bond can achieve effective microphase separation by phase separation due to appropriate incompatibility.

在嵌段共聚物中的各嵌段之密度可經由已知的浮力方法獲得。例如,其可藉由分析已知於空氣中的質量及密度之嵌段共聚物於溶劑中(諸如乙醇)的質量而獲得。 The density of each block in the block copolymer can be obtained via known buoyancy methods. For example, it can be obtained by analyzing the mass of a block copolymer of mass and density known in air in a solvent such as ethanol.

在其中嵌段共聚物包含上述側鏈之例子中,包含鏈的嵌段可具有比其他嵌段更低的密度。例如,若第一嵌段包含鏈,則第一嵌段可具有比第二嵌段更低的密 度。在此例子中,第一嵌段的密度可在從約0.9克/立方公分至約1.5克/立方公分之範圍內。在另一實施態樣中,第一嵌段的密度可為約0.95克/立方公分或更大。第一嵌段的密度可為約1.4克/立方公分或更小,約1.3克/立方公分或更小,約1.2克/立方公分或更小,約1.1克/立方公分或更小,或約1.05克/立方公分或更小。包括上述第一嵌段且在嵌段的密度之間顯示上述差異的此種嵌段共聚物可顯示極佳自組裝性質。表面能及密度係在室溫下測量。 In the case where the block copolymer contains the above side chain, the block containing the chain may have a lower density than the other blocks. For example, if the first block comprises a chain, the first block can have a lower density than the second block degree. In this example, the density of the first block can range from about 0.9 grams per cubic centimeter to about 1.5 grams per cubic centimeter. In another embodiment, the first block may have a density of about 0.95 grams per cubic centimeter or greater. The first block may have a density of about 1.4 grams per cubic centimeter or less, about 1.3 grams per cubic centimeter or less, about 1.2 grams per cubic centimeter or less, about 1.1 grams per cubic centimeter or less, or about 1.05 g/cm 3 or less. Such a block copolymer comprising the above first block and exhibiting the above difference between the densities of the blocks can exhibit excellent self-assembly properties. Surface energy and density are measured at room temperature.

嵌段共聚物可包括體積分率從0.4至0.8之嵌段及體積分率從0.2至0.6之嵌段。在其中嵌段共聚物包含鏈之例子中,具有鏈的嵌段可具有從0.4至0.8之體積分率。例如,第一嵌段包含鏈,第一嵌段可具有從0.4至0.8之體積分率及第二嵌段可具有從0.2至0.6之體積分率。第一和第二嵌段之體積分率總和可為1。各括具有上述體積分率之各嵌段的嵌段共聚物可顯示極佳自組裝性質。嵌段共聚物的各嵌段之體積分率可使用各嵌段之密度及以凝膠滲透層析術(GPC)所獲得的分子量獲得。 The block copolymer may include a block having a volume fraction of from 0.4 to 0.8 and a block having a volume fraction of from 0.2 to 0.6. In the case where the block copolymer contains a chain, the block having a chain may have a volume fraction of from 0.4 to 0.8. For example, the first block comprises a chain, the first block may have a volume fraction of from 0.4 to 0.8 and the second block may have a volume fraction of from 0.2 to 0.6. The sum of the volume fractions of the first and second blocks may be one. The block copolymers each including each block having the above volume fraction can exhibit excellent self-assembly properties. The volume fraction of each block of the block copolymer can be obtained using the density of each block and the molecular weight obtained by gel permeation chromatography (GPC).

嵌段共聚物可具有例如從約3,000至300,000之範圍內的數量平均分子量(Mn)。如本文所使用之術語〝數量平均分子量〞可指以GPC(凝膠滲透層析術)所測量之相對於標準聚苯乙烯的轉換值。如本文所使用之術語〝分子量〞可指數量平均分子量,除非另有其他定義。在另一實施態樣中,分子量(Mn)可為例如3000或更大, 5000或更大,7000或更大,9000或更大,11000或更大,13000或更大,或15000或更大。在另一實施態樣中,分子量(Mn)可為例如250000或更小,200000或更小,180000或更小,160000或更小,140000或更小,120000或更小,100000或更小,90000或更小,80000或更小,70000或更小,60000或更小,50000或更小,40000或更小,30000或更小,或25000或更小。嵌段共聚物可具有在從1.01至1.60之範圍內的多分散度(Mw/Mn)。在另一實施態樣中,多分散度可為約1.1或更大,約1.2或更大,約1.3或更大,或約1.4或更大。 The block copolymer may have a number average molecular weight (Mn) ranging, for example, from about 3,000 to 300,000. The term 〝 number average molecular weight 〞 as used herein may refer to a conversion value relative to standard polystyrene measured by GPC (gel permeation chromatography). The term "molecular weight" as used herein may refer to a number average molecular weight unless otherwise defined. In another embodiment, the molecular weight (Mn) may be, for example, 3000 or more. 5000 or greater, 7000 or greater, 9000 or greater, 11,000 or greater, 13,000 or greater, or 15,000 or greater. In another embodiment, the molecular weight (Mn) may be, for example, 250,000 or less, 200,000 or less, 180,000 or less, 160,000 or less, 140,000 or less, 120,000 or less, 100,000 or less, 90000 or less, 80,000 or less, 70,000 or less, 60,000 or less, 50,000 or less, 40,000 or less, 30,000 or less, or 25,000 or less. The block copolymer may have a polydispersity (Mw/Mn) in the range of from 1.01 to 1.60. In another embodiment, the polydispersity can be about 1.1 or greater, about 1.2 or greater, about 1.3 or greater, or about 1.4 or greater.

在上述範圍內,嵌段共聚物可展現適當的自組裝性質。嵌段共聚物之數量平均分子量及類似者可考慮到目標的自組裝結構而予以控制。 Within the above range, the block copolymer can exhibit appropriate self-assembly properties. The number average molecular weight of the block copolymer and the like can be controlled in consideration of the self-assembled structure of the target.

若嵌段共聚物至少包括第一和第二嵌段,則在嵌段共聚物中的第一嵌段(例如,包括鏈的嵌段)之比率可在10莫耳%至90莫耳%之範圍內。 If the block copolymer comprises at least the first and second blocks, the ratio of the first block (eg, including the blocks of the chain) in the block copolymer may range from 10 mole % to 90 mole % Within the scope.

本發明關於包括嵌段共聚物的聚合物層。聚合物層可被用於各種應用中。例如,其可被用於生物感測器、記錄媒體(諸如快閃記憶體)、磁性儲存媒體、或圖案形成方法、或電裝置或電子裝置及類似者中。 The present invention is directed to a polymer layer comprising a block copolymer. The polymer layer can be used in a variety of applications. For example, it can be used in a biosensor, a recording medium such as a flash memory, a magnetic storage medium, or a pattern forming method, or an electric device or an electronic device and the like.

在一個實施態樣中,在聚合物層中的嵌段共聚物可藉由自組裝而形成週期結構,包括球體、圓柱體、五角二十四面體或片層。例如,在嵌段共聚物中的第一嵌段或第二嵌段或經由共價鍵連結至上述嵌段之其他嵌段的 一個鏈段中,其他的鏈段可形成規律的結構,諸如片層形式、圓柱體形式及類似形式。而且,上述結構可經垂直對準。 In one embodiment, the block copolymer in the polymer layer can form a periodic structure by self-assembly, including spheres, cylinders, pentagonal tetrahedrons or sheets. For example, the first block or the second block in the block copolymer or linked to other blocks of the above block via a covalent bond In one segment, the other segments may form a regular structure such as a sheet form, a cylinder form, and the like. Moreover, the above structure can be vertically aligned.

聚合物層可顯示上述面內相位繞射圖案,亦即垂直於GISAXS分析之GISAXS繞射圖案中的X座標之峰。在另外的實施態樣中,在GISAXS繞射圖案的X座標中可觀察到二或更多個峰。在其中觀察到二或更多個峰之例子中,可以具有恆定的比率確認散射向量(q值)。 The polymer layer can exhibit the above-described in-plane phase diffraction pattern, that is, a peak perpendicular to the X coordinate in the GISAXS diffraction pattern of the GISAXS analysis. In other embodiments, two or more peaks are observed in the X coordinate of the GISAXS diffraction pattern. In the example in which two or more peaks are observed, the scattering vector (q value) can be confirmed with a constant ratio.

本發明亦關於使用嵌段共聚物形成聚合物層之方法。該方法可包括在基板上形成包括自組裝狀態的嵌段共聚物之聚合物層。例如,該方法可包括藉由塗佈及類似方法於基板上形成嵌段共聚物或塗佈溶液(其中嵌段共聚物係於適合的溶劑中稀釋)之層,且若必要時接著使層老化或經熱處理。 The invention also relates to a method of forming a polymer layer using a block copolymer. The method can include forming a polymer layer comprising a block copolymer in a self-assembled state on a substrate. For example, the method may include forming a layer of a block copolymer or a coating solution (in which the block copolymer is diluted in a suitable solvent) on a substrate by coating and the like, and then aging the layer if necessary. Or heat treated.

老化或熱處理可以建基於例如嵌段共聚物之相轉換溫度或玻璃轉換溫度來進行,且例如可在比玻璃轉換溫度或相轉換溫度高的溫度下進行。熱處理的時間未受到特別的限制,且熱處理可進行約1分鐘至72小時,但是若必要時可改變。另外,聚合物層之熱處理的溫度可為例如100℃至250℃,但是可考慮到本文中所使用之嵌段共聚物而改變。 The aging or heat treatment can be carried out based on, for example, the phase transition temperature or the glass transition temperature of the block copolymer, and can be carried out, for example, at a temperature higher than the glass transition temperature or the phase transition temperature. The time of the heat treatment is not particularly limited, and the heat treatment may be performed for about 1 minute to 72 hours, but may be changed if necessary. Further, the temperature of the heat treatment of the polymer layer may be, for example, 100 ° C to 250 ° C, but may be changed in consideration of the block copolymer used herein.

所形成的層可在非極性溶劑及/或極性溶劑中於室溫下經約1分鐘至72小時老化。 The layer formed can be aged in a non-polar solvent and/or a polar solvent at room temperature for about 1 minute to 72 hours.

本發明亦關於圖案形成方法。該方法可包括 自一含有基板及形成於基板表面上且包含自組裝之嵌段共聚物的聚合物層之層合物選擇性地移除嵌段共聚物的第一或第二嵌段。該方法可為在上述基板上形成圖案之方法。例如,該方法可包括在基板上形成聚合物層、選擇性地移除在聚合物層中之嵌段共聚物的一個嵌段或二或更多個嵌段、且接著蝕刻基板。可藉由上述方法形成例如奈米級微圖案。再者,根據聚合物層中之嵌段共聚物的形狀,可以上述方法形成各種形狀的圖案,諸如奈米棒或奈米孔。為了形成圖案,若必要時可將嵌段共聚物與另一共聚物或均聚物混合。可選擇應用於此方法的基板種類而沒有特別的限制,且例如可應用氧化矽及類似者。 The invention also relates to a patterning method. The method can include The first or second block of the block copolymer is selectively removed from a laminate comprising a substrate and a polymer layer formed on the surface of the substrate and comprising a self-assembled block copolymer. The method can be a method of forming a pattern on the above substrate. For example, the method can include forming a polymer layer on the substrate, selectively removing one block or two or more blocks of the block copolymer in the polymer layer, and then etching the substrate. For example, a nano-scale micropattern can be formed by the above method. Further, depending on the shape of the block copolymer in the polymer layer, patterns of various shapes such as a nanorod or a nanopore can be formed by the above method. To form a pattern, the block copolymer can be mixed with another copolymer or homopolymer if necessary. The kind of the substrate to be applied to this method can be selected without particular limitation, and for example, ruthenium oxide and the like can be applied.

例如,根據該方法可形成具有高的長寬比之氧化矽奈米級圖案。例如,各種類型的圖案(諸如奈米棒或奈米孔圖案)可藉由以下方式形成:在氧化矽上形成聚合物層、選擇性地移除其中聚合物層中的嵌段共聚物經形成預定結構之狀態的嵌段共聚物之任何一個嵌段、且以各種方法蝕刻氧化矽,例如反應性離子蝕刻。另外,根據上述方法可形成具有高的長寬比之奈米圖案。 For example, according to this method, a ruthenium oxide nano-scale pattern having a high aspect ratio can be formed. For example, various types of patterns, such as nanorods or nanopore patterns, can be formed by forming a polymer layer on yttrium oxide, selectively removing a block copolymer in which the polymer layer is formed. Any one block of the block copolymer in a state of a predetermined structure, and ruthenium oxide is etched by various methods, such as reactive ion etching. Further, a nano pattern having a high aspect ratio can be formed according to the above method.

例如,圖案可形成為數十奈米之等級,且此種圖案可應用於各種用途中,包括新一代訊息電子磁性記錄媒體。 For example, the pattern can be formed on the order of tens of nanometers, and such a pattern can be applied to various uses, including a new generation of information electronic magnetic recording medium.

例如,其中具有約3至40奈米寬度之奈米結構(例如,奈米線)係以約6至80奈米之間隔配置的圖案可以上述方法形成。在另一實施態樣中,可達成其中具有 約3至40奈米寬度(例如,直徑)之奈米孔係以約6至80奈米之間隔配置的結構。 For example, a pattern in which a nanostructure (e.g., a nanowire) having a width of about 3 to 40 nm is disposed at intervals of about 6 to 80 nm can be formed by the above method. In another embodiment, it can be achieved therein A nanopore of about 3 to 40 nanometers in width (e.g., diameter) is configured at intervals of about 6 to 80 nanometers.

另外,可以此結構形成具有高的長寬比之奈米線或奈米孔。 In addition, a nanowire or a nanopore having a high aspect ratio can be formed by this structure.

在此方法中,選擇性地移除嵌段共聚物的任何一個嵌段之方法未受到特別的限制,且可使用例如藉由將適合的電磁波(例如,紫外線)照射至聚合物層而移除相對軟的嵌段之方法。在此例子中,紫外線照射的條件可根據嵌段共聚物的嵌段類型來決定,且可以具有約254奈米波長之紫外線照射1至60分鐘。 In this method, the method of selectively removing any one block of the block copolymer is not particularly limited, and may be removed using, for example, irradiation of a suitable electromagnetic wave (for example, ultraviolet rays) to the polymer layer. A relatively soft block method. In this example, the conditions of ultraviolet irradiation may be determined depending on the block type of the block copolymer, and may be irradiated with ultraviolet rays having a wavelength of about 254 nm for 1 to 60 minutes.

另外,在以紫外線輻射之後,可將聚合物層以酸處理,以進一步移除由紫外線降解之鏈段。 Additionally, after irradiation with ultraviolet light, the polymer layer can be treated with an acid to further remove the segment degraded by the ultraviolet light.

另外,使用選擇性地移除嵌段之聚合物層蝕刻基板可藉由使用CF4/Ar離子之反應性離子蝕刻來進行,且在上述方法之後,可進一步進行以氧電漿處理而自基板移除聚合物層。 In addition, etching the substrate using the polymer layer selectively removing the block may be performed by reactive ion etching using CF 4 /Ar ions, and after the above method, further processing by oxygen plasma may be performed from the substrate. Remove the polymer layer.

本發明可提供具有極佳自組裝及相分離性質且因此可有效地用於各種應用的嵌段共聚物。本發明亦可提供嵌段共聚物之應用。 The present invention can provide block copolymers having excellent self-assembly and phase separation properties and thus can be effectively used in various applications. The invention also provides for the use of block copolymers.

圖1至6顯示聚合物層之SEM影像。 Figures 1 to 6 show SEM images of polymer layers.

圖7和8顯示GISAXS繞射圖案。 Figures 7 and 8 show the GISAXS diffraction pattern.

圖9至11顯示聚合物層之SEM影像。 Figures 9 through 11 show SEM images of polymer layers.

圖12至14顯示GISAXS繞射圖案。 Figures 12 through 14 show the GISAXS diffraction pattern.

例示性實施態樣 Exemplary implementation

本發明將參考實施例及比較例而於下文詳細說明,但是本發明的範圍不受限於以下的實施例。 The invention will be described in detail below with reference to the examples and comparative examples, but the scope of the invention is not limited by the following examples.

1. NMR分析 NMR analysis

NMR分析係在室溫下使用包括具有三重共振5毫米探針之Varian Unity Inova(500MHz)光譜儀的NMR光譜儀來進行。欲分析之樣品係在其於NMR分析用之溶劑(CDCl3)中稀釋至約10毫克/毫升之濃度後使用,且將化學位移(δ)以ppm表示。 NMR analysis was performed at room temperature using an NMR spectrometer including a Varian Unity Inova (500 MHz) spectrometer with a triple resonance 5 mm probe. The sample to be analyzed was used after it was diluted to a concentration of about 10 mg/ml in a solvent for NMR analysis (CDCl 3 ), and the chemical shift (δ) was expressed in ppm.

<縮寫> <abbreviation>

br=寬峰信號,s=單峰,d=雙重峰,dd=二個雙重峰,t=三重峰,dt=二個三重峰,q=四重峰,p=五重峰,m=多重峰 Br = broad peak signal, s = single peak, d = double peak, dd = two double peaks, t = triplet, dt = two triplets, q = quartet, p = quartet, m = multiple peak

2. GPC(凝膠滲透層析術) 2. GPC (gel permeation chromatography)

數量平均分子量及多分散度係以GPC(凝膠滲透層析術)測量。將實施例或比較例的欲測量之嵌段共聚物或巨引發劑放入5毫升小瓶中,且接著稀釋至約1毫克 /毫升之濃度。接著將用於校準之標準樣品及欲分析之樣品以針筒過濾器(孔徑:0.45微米)過濾且接著分析。使用來自Agilent technologies,Co.之ChemStation作為分析程式。數量平均分子量(Mn)及重量平均分子量(Mw)係藉由比較樣品的溶析時間與校準曲線而獲得,且接著自彼等之比率(Mw/Mn)獲得多分散度(PDI)。GPC之測量條件係如下。 The number average molecular weight and polydispersity are measured by GPC (gel permeation chromatography). The block copolymer or macroinitiator to be measured of the examples or comparative examples is placed in a 5 ml vial and then diluted to about 1 mg. /ml concentration. The standard sample for calibration and the sample to be analyzed were then filtered with a syringe filter (pore size: 0.45 μm) and then analyzed. ChemStation from Agilent technologies, Co. was used as the analysis program. The number average molecular weight (Mn) and the weight average molecular weight (Mw) were obtained by comparing the elution time of the sample with a calibration curve, and then obtaining a polydispersity (PDI) from the ratio (Mw/Mn). The measurement conditions of GPC are as follows.

<GPC測量條件> <GPC measurement conditions>

裝置:來自Agilent technologies,Co.的1200 series Device: 1200 series from Agilent technologies, Co.

管柱:使用來自Polymer laboratories,Co.的PLgel mixed B中之二者 Column: use two of PLgel mixed B from Polymer laboratories, Co.

溶劑:THF Solvent: THF

管柱溫度:35℃ Column temperature: 35 ° C

樣品濃度:1毫克/毫升,200L注射液 Sample concentration: 1 mg / ml, 200 L injection

標準樣品:聚苯乙烯(Mp:3900000,723000,316500,52200,31400,7200,3940,485) Standard sample: polystyrene (Mp: 3900000, 723000, 316500, 52200, 31400, 7200, 3940, 485)

3. GISAXS(掠角入射小角度X射線散射) 3. GISAXS (grazing angle incident small angle X-ray scattering)

GISAXS分析係在Pohang Light Source的3C光束路徑中進行。塗佈溶液係藉由以欲評估之嵌段共聚物溶解於氟苯中以便使固體含量為0.7重量%而製得,將塗佈溶液旋塗於基板上以便具有約5奈米厚度。塗佈面積經控制為約2.25平方公分(塗佈面積:寬度=1.5公分,長 度=1.5公分)。將塗層在室溫下經約1小時乾燥,且接著接受在約160℃下經約1小時的熱退火,以便於實現相分離結構。因此,形成其中實現相分離結構之層。將形成之層以X射線照射,以便使入射角為從約0.12度至0.23度,其對應於層的臨界角與基板的臨界角之間的角度,且接著藉由使用2D marCCD獲得自層散射之X射線繞射圖案。在此時,選擇從層至檢測器之距離以便於從約2公尺至3公尺之範圍內有效地觀察在層中的自組裝圖案。使用具有親水性表面的基板(以食人魚溶液處理且在室溫下具有關於純化水約5度之濕潤角的聚矽氧基板)或具有疏水性表面的基板(以HMDS(六甲基二矽氮烷)處理且在室溫下具有關於純化水約60度之濕潤角的聚矽氧基板)作為基板。 The GISAXS analysis was performed in the 3C beam path of the Pohang Light Source. The coating solution was prepared by dissolving the block copolymer to be evaluated in fluorobenzene so as to have a solid content of 0.7% by weight, and the coating solution was spin-coated on the substrate so as to have a thickness of about 5 nm. The coated area is controlled to be about 2.25 square centimeters (coated area: width = 1.5 cm, long Degree = 1.5 cm). The coating was dried at room temperature for about 1 hour and then subjected to thermal annealing at about 160 ° C for about 1 hour to facilitate phase separation. Thus, a layer in which the phase separation structure is realized is formed. The formed layer is irradiated with X-rays such that the angle of incidence is from about 0.12 degrees to 0.23 degrees, which corresponds to the angle between the critical angle of the layer and the critical angle of the substrate, and then self-layer scattering is obtained by using a 2D marCCD. The X-ray diffraction pattern. At this point, the distance from the layer to the detector is selected to effectively observe the self-assembled pattern in the layer from about 2 meters to 3 meters. A substrate having a hydrophilic surface (a polymethoxyl plate treated with a piranha solution and having a wetting angle of about 5 degrees with respect to purified water at room temperature) or a substrate having a hydrophobic surface (with HMDS (hexamethyldiazine) As the substrate, a polydecyl oxide plate treated with a nitrogen alkane) having a wetting angle of about 60 degrees with respect to purified water at room temperature.

4. XRD分析 4. XRD analysis

XRD圖案係藉由將X射線通過在Pohang Light Source的4C光束路徑中的樣品而根據散射向量(q)測量散射強度來評估。在將樣品放入測量XRD的槽中之後,使用未進行以純化移除雜質之任何特定的預處理之嵌段共聚物所獲得的粉末作為樣品。在XRD圖案分析期間,使用垂直大小為0.023毫米及水平大小為0.3毫米之X射線作為X射線,且使用測量裝置(例如,2D marCCD)作為檢測器。獲得成為影像的自樣品散射之2D繞射圖案。使用最小平方技術的數值分析來分析所獲得的繞射圖 案,獲得諸如散射向量及FWHM之訊息。分析係以the origin程式進行。具有最低強度的XRD繞射圖案之位置成為基準線且將最低強度轉換成零,且接著關於XRD圖案中的峰輪廓進行高斯擬合,且接著自高斯擬合的結果獲得散射向量(q)及FWHM。將高斯擬合之R平方設定為0.96或更大。 The XRD pattern was evaluated by measuring the scattering intensity from the scattering vector (q) by passing X-rays through the sample in the 4C beam path of the Pohang Light Source. After the sample was placed in a bath for measuring XRD, a powder obtained without performing any specific pretreated block copolymer for purifying impurities was used as a sample. During the XRD pattern analysis, X-rays having a vertical size of 0.023 mm and a horizontal size of 0.3 mm were used as X-rays, and a measuring device (for example, 2D marCCD) was used as a detector. A 2D diffraction pattern that is image-scattered from the sample is obtained. Analysis of the obtained diffraction pattern using numerical analysis of the least squares technique In the case, obtain information such as the scattering vector and FWHM. The analysis is performed with the origin program. The position of the XRD diffraction pattern having the lowest intensity becomes the reference line and the lowest intensity is converted to zero, and then a Gaussian fitting is performed with respect to the peak profile in the XRD pattern, and then the scattering vector (q) is obtained from the result of the Gaussian fitting and FWHM. The R square of the Gaussian fit is set to 0.96 or more.

5. 表面能測量 5. Surface energy measurement

表面能係使用液滴形狀分析儀(來自KRUSS,Co.的DSA 100產品)測量。表面能係關於藉由以下方式所形成之聚合物層來評估:將藉由以欲評估之材料溶解於氟苯中以便使固體含量為2重量%而製得的塗佈溶液旋塗於矽晶圓上,以便使塗層具有50奈米厚度(塗佈面積:寬度=2公分,長度=2公分),且使塗層在室溫下經約1小時乾燥,且接著使塗層接受在約160℃下經約1小時的熱退火。將其中已知表面張力的去離子水滴在熱退火之後的層上且接著獲得其接觸角之方法重複5次,且計算所獲得的5個接觸角之平均值。同樣地,將其中已知表面張力的二碘甲烷滴在熱退火之後的層上且接著獲得其接觸角之方法重複5次,且計算所獲得的5個接觸角之平均值。表面能係藉由使用以去離子水及二碘甲烷所獲得的接觸角平均值且取代關於溶劑的表面張力之值(Strom值)的Owens-Wendt-Rabel-Kaelble方法獲得。嵌段共聚物的各嵌段之表面能係如上述方法以相對於僅由形成嵌段之單體所製備的 均聚物而獲得。 The surface energy was measured using a drop shape analyzer (DSA 100 product from KRUSS, Co.). The surface energy is evaluated by a polymer layer formed by spin coating a coating solution prepared by dissolving the material to be evaluated in fluorobenzene so as to have a solid content of 2% by weight. Round so that the coating has a thickness of 50 nm (coating area: width = 2 cm, length = 2 cm), and the coating is allowed to dry at room temperature for about 1 hour, and then the coating is allowed to receive Thermal annealing at 160 ° C for about 1 hour. The method of deionized water droplets in which the surface tension is known is subjected to the layer after the thermal annealing and then the contact angle thereof is repeated 5 times, and the average of the obtained 5 contact angles is calculated. Similarly, the method in which the surface tension of diiodomethane was known to be dropped on the layer after the thermal annealing and then the contact angle thereof was obtained was repeated 5 times, and the average of the obtained 5 contact angles was calculated. The surface energy was obtained by the Owens-Wendt-Rabel-Kaelble method using the average of the contact angles obtained with deionized water and diiodomethane and substituting the value of the surface tension of the solvent (Strom value). The surface energy of each block of the block copolymer is prepared as described above with respect to the monomer formed only by the block. Obtained from a homopolymer.

6. 體積分率測量 6. Volume fraction measurement

嵌段共聚物的各嵌段之體積分率係建基於以GPC(凝膠滲透層析術)所測量的分子量及在室溫下的密度來計算。在上述中,密度係以浮力方法測量,尤其藉由已知於空氣中之質量及密度的欲測量之樣品於溶劑中(乙醇)中的質量來計算。 The volume fraction of each block of the block copolymer is calculated based on the molecular weight measured by GPC (gel permeation chromatography) and the density at room temperature. In the above, the density is measured by the buoyancy method, especially by the mass of the sample to be measured, known in air, in the solvent (ethanol).

製備例1. 單體(A)之合成 Preparation Example 1. Synthesis of Monomer (A)

下式A之化合物(DPM-C12)係由以下方法合成。將氫醌(10.0克,94.2毫莫耳)及1-溴十二烷(23.5克,94.2毫莫耳)添加至250毫升燒瓶中且溶解在100毫升乙腈中,將過量碳酸鉀添加至其中且接著將混合物在75℃下於氮氣下反應約48小時。在反應之後,移除用於反應之剩餘的碳酸鉀及乙腈。添加二氯甲烷(DCM)與水之混合溶劑來進行整理,且收集分離之有機層及經由MgSO4脫水。接著使用DCM經由管柱層析術獲得具有約37%產率之白色固體中間物。 The compound of the following formula A (DPM-C12) was synthesized by the following method. Hydroquinone (10.0 g, 94.2 mmol) and 1-bromododecane (23.5 g, 94.2 mmol) were added to a 250 ml flask and dissolved in 100 ml of acetonitrile, and excess potassium carbonate was added thereto. The mixture was then reacted at 75 ° C under nitrogen for about 48 hours. After the reaction, the remaining potassium carbonate and acetonitrile used for the reaction were removed. A mixed solvent of dichloromethane (DCM) and water was added to carry out the work, and the separated organic layer was collected and dried over MgSO 4 . A white solid intermediate having a yield of about 37% was then obtained via column chromatography using DCM.

<中間物的NMR分析結果> <NMR analysis results of intermediates>

1H-NMR(CDCl3):δ6.77(dd,4H);δ4.45(s,1H);δ3.89(t,2H);δ1.75(p,2H);δ1.43(p,2H);δ1.33-1.26(m,16H);δ0.88(t,3H) 1 H-NMR (CDCl 3 ): δ 6.77 (dd, 4H); δ 4.45 (s, 1H); δ 3.89 (t, 2H); δ 1.75 (p, 2H); δ 1.43 (p , 2H); δ1.33-1.26(m, 16H); δ0.88(t, 3H)

將合成之中間物(9.8克,35.2毫莫耳)、甲基丙烯酸(6.0克,69.7毫莫耳)、二環己基碳二醯亞胺(DCC;10.8克,52.3毫莫耳)及對-二甲基胺基吡啶(DMPA;1.7克,13.9毫莫耳)放入燒瓶中,添加120毫升二氯甲烷,且在室溫下於氮氣下進行24小時反應。在反應完成之後,經由過濾器移除在反應中所產生之尿素鹽,且亦移除剩餘的二氯甲烷。使用己烷及DCM(二氯甲烷)作為移動相經由管柱層析術移除雜質,且將獲得的產物在甲醇與水之混合溶劑(以1:1之重量比混合)中再結晶,由此獲得具有63%產率之白色固體產物(DPM-C12)(7.7克,22.2毫莫耳)。 The intermediate to be synthesized (9.8 g, 35.2 mmol), methacrylic acid (6.0 g, 69.7 mmol), dicyclohexylcarbodiimide (DCC; 10.8 g, 52.3 mmol) and Dimethylaminopyridine (DMPA; 1.7 g, 13.9 mmol) was placed in a flask, 120 ml of dichloromethane was added, and the reaction was carried out under nitrogen at room temperature for 24 hours. After the reaction was completed, the urea salt produced in the reaction was removed via a filter, and the remaining dichloromethane was also removed. The impurities were removed by column chromatography using hexane and DCM (dichloromethane) as the mobile phase, and the obtained product was recrystallized in a mixed solvent of methanol and water (mixed in a weight ratio of 1:1), This gave a white solid product (DPM-C12) (7.7 g, 22.2 mmol) with 63% yield.

<NMR分析結果> <NMR analysis results>

1H-NMR(CDCl3):δ7.02(dd,2H);δ6.89(dd,2H);δ6.32(dt,1H);δ5.73(dt,1H);δ3.94(t,2H);δ2.05(dd,3H);δ1.76(p,2H);δ1.43(p,2H);1.34-1.27(m,16H);δ0.88(t,3H) 1 H-NMR (CDCl 3 ): δ 7.02 (dd, 2H); δ 6.89 (dd, 2H); δ 6.32 (dt, 1H); δ 5.73 (dt, 1H); δ 3.94 (t) , 2H); δ2.05 (dd, 3H); δ 1.76 (p, 2H); δ 1.43 (p, 2H); 1.34-1.27 (m, 16H); δ 0.88 (t, 3H)

在上式中,R為具有12個碳原子之直鏈烷基。 In the above formula, R is a linear alkyl group having 12 carbon atoms.

製備例2. 單體(G)之合成 Preparation Example 2. Synthesis of Monomer (G)

下式G之化合物係根據製備例1之方法合成,除了使用1-溴丁烷代替1-溴十二烷以外。關於上述化合物之NMR分析結果係如下。 The compound of the following formula G was synthesized according to the method of Preparation 1, except that 1-bromobutane was used instead of 1-bromododecane. The NMR analysis results regarding the above compounds are as follows.

<關於DPM-C4之NMR分析結果> <Results of NMR analysis on DPM-C4>

1H-NMR(CDCl3):δ7.02(dd,2H);δ6.89(dd,2H);δ6.33(dt,1H);δ5.73(dt,1H);δ3.95(t,2H);δ2.06(dd,3H);δ1.76(p,2H);δ1.49(p,2H);δ0.98(t,3H) 1 H-NMR (CDCl 3) : δ7.02 (dd, 2H); δ6.89 (dd, 2H); δ6.33 (dt, 1H); δ5.73 (dt, 1H); δ3.95 (t , 2H); δ2.06 (dd, 3H); δ 1.76 (p, 2H); δ 1.49 (p, 2H); δ 0.98 (t, 3H)

在上式中,R為具有4個碳原子之直鏈烷基。 In the above formula, R is a linear alkyl group having 4 carbon atoms.

製備例3. 單體(B)之合成 Preparation Example 3. Synthesis of Monomer (B)

下式B之化合物係根據製備例1之方法合成,除了使用1-溴辛烷代替1-溴十二烷以外。關於上述化合物之NMR分析結果係如下。 The compound of the following formula B was synthesized according to the method of Preparation 1, except that 1-bromooctane was used instead of 1-bromododecane. The NMR analysis results regarding the above compounds are as follows.

<關於DPM-C8之NMR分析結果> <About NMR analysis results of DPM-C8>

1H-NMR(CDCl3):δ7.02(dd,2H);δ6.89(dd,2H); δ6.32(dt,1H);δ5.73(dt,1H);δ3.94(t,2H);δ2.05(dd,3H);δ1.76(p,2H);δ1.45(p,2H);1.33-1.29(m,8H);δ0.89(t,3H) 1 H-NMR (CDCl 3 ): δ 7.02 (dd, 2H); δ 6.89 (dd, 2H); δ 6.32 (dt, 1H); δ 5.73 (dt, 1H); δ 3.94 (t , 2H); δ2.05 (dd, 3H); δ 1.76 (p, 2H); δ 1.45 (p, 2H); 1.33-1.29 (m, 8H); δ 0.89 (t, 3H)

在上式中,R為具有8個碳原子之直鏈烷基。 In the above formula, R is a linear alkyl group having 8 carbon atoms.

製備例4 Preparation Example 4

下式C之化合物(DPM-C10)係根據製備例1之方法合成,除了使用1-溴癸烷代替1-溴十二烷以外。關於上述化合物之NMR分析結果係如下。 The compound of the following formula C (DPM-C10) was synthesized according to the method of Preparation 1, except that 1-bromodecane was used instead of 1-bromododecane. The NMR analysis results regarding the above compounds are as follows.

<關於DPM-C10之NMR分析結果> <About NMR analysis results of DPM-C10>

1H-NMR(CDCl3):δ7.02(dd,2H);δ6.89(dd,2H);δ6.33(dt,1H);δ5.72(dt,1H);δ3.94(t,2H);δ2.06(dd,3H);δ1.77(p,2H);δ1.45(p,2H);1.34-1.28(m,12H);δ0.89(t,3H) 1 H-NMR (CDCl 3 ): δ 7.02 (dd, 2H); δ 6.89 (dd, 2H); δ 6.33 (dt, 1H); δ 5.72 (dt, 1H); δ 3.94 (t) , 2H); δ2.06 (dd, 3H); δ 1.77 (p, 2H); δ 1.45 (p, 2H); 1.34-1.28 (m, 12H); δ 0.89 (t, 3H)

在上式中,R為具有10個碳原子之直鏈烷基。 In the above formula, R is a linear alkyl group having 10 carbon atoms.

製備例5 Preparation Example 5

下式D之化合物係根據製備例1之方法合成,除了使用1-溴十四烷代替1-溴十二烷以外。關於上述化合物之NMR分析結果係如下。 The compound of the following formula D was synthesized according to the method of Preparation 1, except that 1-bromotetradecane was used instead of 1-bromododecane. The NMR analysis results regarding the above compounds are as follows.

<關於DPM-C14之NMR分析結果> <About NMR analysis results of DPM-C14>

1H-NMR(CDCl3):δ7.02(dd,2H);δ6.89(dd,2H);δ6.33(dt,1H);δ5.73(dt,1H);δ3.94(t,2H);δ2.05(dd,3H);δ1.77(p,2H);δ1.45(p,2H);1.36-1.27(m,20H);δ0.88(t,3H.) 1 H-NMR (CDCl 3 ): δ 7.02 (dd, 2H); δ 6.89 (dd, 2H); δ 6.33 (dt, 1H); δ 5.73 (dt, 1H); δ 3.94 (t) , 2H); δ2.05 (dd, 3H); δ 1.77 (p, 2H); δ 1.45 (p, 2H); 1.36-1.27 (m, 20H); δ 0.88 (t, 3H.)

在上式中,R為具有14個碳原子之直鏈烷基。 In the above formula, R is a linear alkyl group having 14 carbon atoms.

製備例6 Preparation Example 6

下式E之化合物係根據製備例1之方法合 成,除了使用1-溴十六烷代替1-溴十二烷以外。關於上述化合物之NMR分析結果係如下。 The compound of the following formula E is prepared according to the method of Preparation Example 1. In addition to using 1-bromohexadecane instead of 1-bromododecane. The NMR analysis results regarding the above compounds are as follows.

<關於DPM-C16之NMR分析結果> <About NMR analysis results of DPM-C16>

1H-NMR(CDCl3):δ7.01(dd,2H);δ6.88(dd,2H);δ6.32(dt,1H);δ5.73(dt,1H);δ3.94(t,2H);δ2.05(dd,3H);δ1.77(p,2H);δ1.45(p,2H);1.36-1.26(m,24H);δ0.89(t,3H) 1 H-NMR (CDCl 3 ): δ 7.01 (dd, 2H); δ 6.88 (dd, 2H); δ 6.32 (dt, 1H); δ 5.73 (dt, 1H); δ 3.94 (t , 2H); δ2.05 (dd, 3H); δ 1.77 (p, 2H); δ 1.45 (p, 2H); 1.36-1.26 (m, 24H); δ 0.89 (t, 3H)

在上式中,R為具有16個碳原子之直鏈烷基。 In the above formula, R is a linear alkyl group having 16 carbon atoms.

實施例1 Example 1

將製備例1的2.0克化合物(DPM-C12)、64毫克RAFT(可逆式加成-斷裂鏈轉移)試劑(二硫苯甲酸氰基異丙酯)、23毫克AIBN(偶氮雙異丁腈)及5.34毫升苯添加至10毫升燒瓶中且接著在室溫下攪拌30分鐘,且接著在70℃進行4小時的RAFT(可逆式加成斷裂鏈轉移)聚合反應。在聚合之後,將反應之溶液在作為萃取溶劑的250毫升甲醇中沉澱,真空過濾且乾燥,以便獲得粉紅色巨引發劑。巨引發劑的產率為約86%,且其數量平均分子量 (Mn)及多分散度(Mw/Mn)分別為9,000及1.16。 2.0 g of the compound of Preparation Example 1 (DPM-C12), 64 mg of RAFT (reversible addition-fragmentation chain transfer) reagent (cyanoisopropyl dithiobenzoate), 23 mg of AIBN (azobisisobutyronitrile) And 5.34 ml of benzene was added to a 10 ml flask and then stirred at room temperature for 30 minutes, and then subjected to RAFT (reversible addition fragmentation chain transfer) polymerization at 70 ° C for 4 hours. After the polymerization, the solution of the reaction was precipitated in 250 ml of methanol as an extraction solvent, vacuum filtered and dried to obtain a pink macroinitiator. The yield of the macroinitiator is about 86%, and the number average molecular weight thereof (Mn) and polydispersity (Mw/Mn) were 9,000 and 1.16, respectively.

將0.3克巨引發劑、2.7174克五氟苯乙烯及1.306毫升苯添加至10毫升Schlenk燒瓶中且接著在室溫下攪拌30分鐘,且接著在115℃下進行4小時的RAFT(可逆式加成斷裂鏈轉移)聚合反應。在聚合之後,將反應之溶液在作為萃取溶劑的250毫升甲醇中沉澱,真空過濾且乾燥,以便獲得淺粉紅色嵌段共聚物。嵌段共聚物的產率為約18%,且其數量平均分子量(Mn)及多分散度(Mw/Mn)分別為16,300及1.13。嵌段共聚物包括自製備例1的單體(A)所衍生之第一嵌段和自五氟苯乙烯所衍生之第二嵌段。 0.3 g of the giant initiator, 2.7174 g of pentafluorostyrene and 1.306 ml of benzene were added to a 10 ml Schlenk flask and then stirred at room temperature for 30 minutes, and then subjected to RAFT at 115 ° C for 4 hours (reversible addition) Fracture chain transfer) polymerization. After the polymerization, the solution of the reaction was precipitated in 250 ml of methanol as an extraction solvent, vacuum filtered and dried to obtain a light pink block copolymer. The yield of the block copolymer was about 18%, and the number average molecular weight (Mn) and polydispersity (Mw/Mn) thereof were 16,300 and 1.13, respectively. The block copolymer includes a first block derived from the monomer (A) of Preparation Example 1 and a second block derived from pentafluorostyrene.

實施例2 Example 2

嵌段共聚物係與實施例1相同的方法製備,除了使用藉由使用製備例3的單體(B)代替製備例1的單體(A)所製備之巨引發劑及五氟苯乙烯以外。嵌段共聚物包括自製備例3的單體(B)所衍生之第一嵌段和自五氟苯乙烯所衍生之第二嵌段。 The block copolymer was prepared in the same manner as in Example 1 except that the monomer (B) of Preparation Example 3 was used instead of the macroinitiator prepared by the monomer (A) of Preparation Example 1 and pentafluorostyrene. . The block copolymer includes a first block derived from the monomer (B) of Preparation Example 3 and a second block derived from pentafluorostyrene.

實施例3 Example 3

嵌段共聚物係與實施例1相同的方法製備,除了使用藉由使用製備例4的單體(C)代替製備例1的單體(A)所製備之巨引發劑及五氟苯乙烯以外。嵌段共聚物包括自製備例4的單體(C)所衍生之第一嵌段和自五氟苯 乙烯所衍生之第二嵌段。 The block copolymer was prepared in the same manner as in Example 1 except that the monomer (C) of Preparation Example 4 was used instead of the macroinitiator prepared by the monomer (A) of Preparation Example 1 and pentafluorostyrene. . The block copolymer includes the first block derived from the monomer (C) of Preparation Example 4 and from pentafluorobenzene The second block derived from ethylene.

實施例4 Example 4

嵌段共聚物係與實施例1相同的方法製備,除了使用藉由使用製備例5的單體(D)代替製備例1的單體(A)所製備之巨引發劑及五氟苯乙烯以外。嵌段共聚物包括自製備例5的單體(D)所衍生之第一嵌段和自五氟苯乙烯所衍生之第二嵌段。 The block copolymer was prepared in the same manner as in Example 1 except that the monomer (D) of Preparation Example 5 was used instead of the macroinitiator prepared by the monomer (A) of Preparation Example 1 and pentafluorostyrene. . The block copolymer includes a first block derived from the monomer (D) of Preparation Example 5 and a second block derived from pentafluorostyrene.

實施例5 Example 5

嵌段共聚物係與實施例1相同的方法製備,除了使用藉由使用製備例6的單體(E)代替製備例1的單體(A)所製備之巨引發劑及五氟苯乙烯以外。嵌段共聚物包括自製備例6的單體(E)所衍生之第一嵌段和自五氟苯乙烯所衍生之第二嵌段。 The block copolymer was prepared in the same manner as in Example 1, except that the macroinitiator prepared by using the monomer (E) of Preparation Example 6 instead of the monomer (A) of Preparation Example 1 and pentafluorostyrene was used. . The block copolymer includes a first block derived from the monomer (E) of Preparation Example 6 and a second block derived from pentafluorostyrene.

比較例1 Comparative example 1

嵌段共聚物係與實施例1相同的方法製備,除了使用藉由使用製備例2的單體(G)代替製備例1的單體(A)所製備之巨引發劑及五氟苯乙烯以外。嵌段共聚物包括自製備例2的單體(G)所衍生之第一嵌段和自五氟苯乙烯所衍生之第二嵌段。 The block copolymer was prepared in the same manner as in Example 1 except that the macroinitiator prepared by using the monomer (G) of Preparation Example 2 instead of the monomer (A) of Preparation Example 1 and pentafluorostyrene was used. . The block copolymer includes a first block derived from the monomer (G) of Preparation Example 2 and a second block derived from pentafluorostyrene.

比較例2 Comparative example 2

嵌段共聚物係與實施例1相同的方法製備,除了使用藉由使用甲基丙烯酸4-甲氧基苯酯代替製備例1的單體(A)所製備之巨引發劑及五氟苯乙烯以外。嵌段共聚物包括自甲基丙烯酸4-甲氧基苯酯所衍生之第一嵌段和自五氟苯乙烯所衍生之第二嵌段。 The block copolymer was prepared in the same manner as in Example 1 except that the macroinitiator prepared by using the monomer (A) of Preparation Example 1 and the pentafluorostyrene by using 4-methoxyphenyl methacrylate was used. other than. The block copolymer comprises a first block derived from 4-methoxyphenyl methacrylate and a second block derived from pentafluorostyrene.

比較例3 Comparative example 3

嵌段共聚物係與實施例1相同的方法製備,除了使用藉由使用甲基丙烯酸十二烷酯代替製備例1的單體(A)所製備之巨引發劑及五氟苯乙烯以外。嵌段共聚物包括自甲基丙烯酸十二烷酯所衍生之第一嵌段和自五氟苯乙烯所衍生之第二嵌段。 The block copolymer was prepared in the same manner as in Example 1 except that a macroinitiator prepared by using the dodecyl methacrylate in place of the monomer (A) of Preparation Example 1 and pentafluorostyrene was used. The block copolymer comprises a first block derived from dodecyl methacrylate and a second block derived from pentafluorostyrene.

關於實施例的巨引發劑及嵌段共聚物之GPC結果陳述於表1中。 The GPC results for the macroinitiators and block copolymers of the examples are set forth in Table 1.

試驗例1. XRD分析 Test Example 1. XRD Analysis

關於嵌段共聚物根據上述方法所進行之XRD分析的結果陳述於以下表2中(在比較例3之例子中,在從0.5奈米-1至10奈米-1之散射向量範圍內未觀察到峰)。 About a block copolymer based on a result of the above-described methods performed by XRD analysis are set forth in 2 (in the example of Comparative Example 3, when not observed scattering from 0.5 nm to 10 nm -1 -1 the vector scope of the following table To the peak).

試驗例1. Test example 1.

自組裝之聚合物層係藉由以下方式獲得:將實施例或比較例之嵌段共聚物溶解於氟苯中而製得的塗佈溶液旋塗於矽晶圓上,以便使塗佈厚度為5奈米(塗佈面積:寬度×長度=1.5公分×1.5公分),且使塗層在室溫下經1小時乾燥,且接著使塗層接受在約160℃下經1小時的熱退火。接著獲得所形成的聚合物層之SEM(掃描電子顯微鏡)影像。圖1至5分別為實施例1至5的結果。如圖所確認,在實施例的嵌段共聚物之例子中,有效地形成具有線圖案的自組裝之聚合物層。然而,未於比較例中實現適當的相分離。例如,圖6為比較例3的SEM結果,且確認未實現有效的相分離。 The self-assembled polymer layer is obtained by dissolving the block copolymer of the embodiment or the comparative example in fluorobenzene and spin-coating the coating solution on the tantalum wafer so that the coating thickness is 5 nm (coating area: width x length = 1.5 cm x 1.5 cm), and the coating was allowed to dry at room temperature for 1 hour, and then the coating was subjected to thermal annealing at about 160 ° C for 1 hour. An SEM (Scanning Electron Microscope) image of the formed polymer layer was then obtained. 1 to 5 are the results of Examples 1 to 5, respectively. As confirmed from the figure, in the example of the block copolymer of the example, a self-assembled polymer layer having a line pattern was efficiently formed. However, proper phase separation was not achieved in the comparative examples. For example, FIG. 6 is the SEM result of Comparative Example 3, and it was confirmed that effective phase separation was not achieved.

試驗例2. GISAXS繞射圖案之確認 Test Example 2. Confirmation of GISAXS diffraction pattern

圖7顯示有關在室溫下具有關於純化水約5度之接觸角的親水性表面所進行之實施例1的嵌段共聚物之GISAXS(掠角入射小角度X射線散射)分析的結果,及圖8顯示有關在室溫下具有關於純化水約60度之接觸角的疏水性表面所進行之實施例1的嵌段共聚物之GISAXS(掠角入射小角度X射線散射)分析的結果。可從圖7和8確認在任何例子中觀察到面內相位繞射圖案。可從上述確認嵌段共聚物可顯示關於各種基板的垂直對準性質。 Figure 7 shows the results of a GISAXS (grazing angle incident small angle X-ray scattering) analysis of the block copolymer of Example 1 carried out on a hydrophilic surface having a contact angle of about 5 degrees with respect to purified water at room temperature, and Figure 8 shows the results of a GISAXS (grazing angle incident small angle X-ray scattering) analysis of the block copolymer of Example 1 carried out with a hydrophobic surface having a contact angle of about 60 degrees with respect to purified water at room temperature. It can be confirmed from Figures 7 and 8 that the in-plane phase diffraction pattern is observed in any of the examples. It can be confirmed from the above that the block copolymer can exhibit vertical alignment properties with respect to various substrates.

再者,藉由使用實施例1的嵌段共聚物可以與上述相同的方法形成聚合物層。聚合物層分別形成於室溫下具有5度純化水接觸角的經食人魚溶液處理之聚矽氧基板、在室溫下具有45度純化水接觸角之氧化矽基板及在室溫下具有60度純化水接觸角的經HMDS(六甲基二矽氮烷)處理之聚矽氧基板。圖9至11分別為關於在具有5度、45度及60度接觸角之表面上的聚合物層之SEM影像。可從圖確認嵌段共聚物形成相分離結構而與基板的表面性質無關。 Further, a polymer layer can be formed by the same method as described above by using the block copolymer of Example 1. The polymer layer is formed by a guar solution treated with a piranha solution having a 5 degree purified water contact angle at room temperature, a cerium oxide substrate having a 45 degree purified water contact angle at room temperature, and 60 at room temperature. The HMDS (hexamethyldioxane) treated polydecyloxy plate was purified at a water contact angle. Figures 9 through 11 are SEM images of polymer layers on surfaces having contact angles of 5, 45 and 60 degrees, respectively. It can be confirmed from the figure that the block copolymer forms a phase-separated structure regardless of the surface properties of the substrate.

試驗例3. 嵌段共聚物之性質測量 Test Example 3. Measurement of properties of block copolymer

關於如上述方法所測量之各嵌段的評估結果陳述於以下表中。 The results of the evaluation of each block as measured by the above method are set forth in the following table.

試驗例4. Test Example 4.

再者,具有不同的體積比率之嵌段共聚物係根據與實施例1相同的方法製得,除了控制單體與巨引發劑之莫耳比以外。 Further, block copolymers having different volume ratios were obtained in the same manner as in Example 1, except that the molar ratio of the monomer to the macroinitiator was controlled.

體積分率係如下。 The volume fraction is as follows.

嵌段共聚物的各嵌段之體積分率係建基於以GPC(凝膠滲透層析術)所測量的分子量及在室溫下的密度來計算。在上述中,密度係以浮力方法測量,尤其藉由已知於空氣中的質量及密度之嵌段共聚物於溶劑(諸如乙醇)中的質量來計算,且根據上述方法進行GPC。 The volume fraction of each block of the block copolymer is calculated based on the molecular weight measured by GPC (gel permeation chromatography) and the density at room temperature. In the above, the density is measured by a buoyancy method, in particular, by mass of a block copolymer of mass and density known in air in a solvent such as ethanol, and GPC is carried out according to the above method.

聚合物層係藉由以下方式獲得:將藉由以各樣品的嵌段共聚物溶解於氟苯中至約0.7重量%之固體含量而製得的塗佈溶液旋塗於矽晶圓上,以便使塗佈厚度為5奈米(塗佈面積:寬度=1.5公分,長度=1.5公分),且使塗層在室溫下經1小時乾燥,且接著使塗層接受在約160℃下經1小時的熱退火。接著進行GISAXS,且將結果例證於圖中。圖12至14分別為樣品1至3的結果,且可確認觀察到面內相位繞射圖案,且嵌段共聚物具有垂直對準性質。 The polymer layer is obtained by spin coating a coating solution prepared by dissolving a block copolymer of each sample in fluorobenzene to a solid content of about 0.7% by weight on a tantalum wafer, so that The coating thickness was 5 nm (coating area: width = 1.5 cm, length = 1.5 cm), and the coating was allowed to dry at room temperature for 1 hour, and then the coating was subjected to acceptance at about 160 ° C. Hour thermal annealing. Next, GISAXS is performed and the results are exemplified in the figure. 12 to 14 are the results of the samples 1 to 3, respectively, and it was confirmed that the in-plane phase diffraction pattern was observed, and the block copolymer had a vertical alignment property.

Claims (10)

一種嵌段共聚物,其包含第一嵌段和不同於該第一嵌段的第二嵌段,且在X射線繞射法中展現至少一個在從0.5奈米-1至10奈米-1之散射向量(q)範圍內的半峰全寬(full width at half maximum)係從0.2奈米-1至1.5奈米-1之峰,其中該第一嵌段是以下式1表示,而該第二嵌段是以下式3表示: 其中R為氫或具有1至4個碳原子之烷基,X為-C(=O)-X1-或-X1-C(=O)-,其中X1為氧原子、硫原子、-S(=O)2-、具有1至20個碳原子之伸烷基、具有2至20個碳原子之伸烯基或具有2至20個碳原子之伸炔基,且Y為包含與具有8或更多個形成鏈的原子之鏈連結的環狀結構之單價取代基,其中該環狀結構為具有6至18個碳原子之芳族結構,且其中該形成鏈的原子為碳、氧、硫或氮;[式3] 其中X2為單鍵、氧原子、硫原子、-S(=O)2-、具有1至20個碳原子之伸烷基、具有2至20個碳原子之伸烯基、具有2至20個碳原子之伸炔基、-C(=O)-X1-或-X1-C(=O)-,其中X1為單鍵、氧原子、硫原子、-S(=O)2-、具有1至20個碳原子之伸烷基、具有2至20個碳原子之伸烯基或具有2至20個碳原子之伸炔基,且W為包含至少一個鹵素原子之芳基。 A block copolymer comprising a first block and a second block different from the first block, and exhibits the X-ray diffraction method, at least one of from 0.5 nm to 10 nm -1 -1 the scattering vector (q) in the range of the half maximum full-width (full width at half maximum) from the peak lines 1 to 0.2 nm of 1.5 nm -1, wherein the first block is represented by the following formula 1, which The second block is represented by the following formula 3: Wherein R is hydrogen or an alkyl group having 1 to 4 carbon atoms, and X is -C(=O)-X 1 - or -X 1 -C(=O)-, wherein X 1 is an oxygen atom, a sulfur atom, -S(=O) 2 -, an alkylene group having 1 to 20 carbon atoms, an extended alkenyl group having 2 to 20 carbon atoms or an alkynyl group having 2 to 20 carbon atoms, and Y is contained a monovalent substituent having a cyclic structure in which 8 or more chain-forming atoms are linked, wherein the cyclic structure is an aromatic structure having 6 to 18 carbon atoms, and wherein the chain-forming atom is carbon, Oxygen, sulfur or nitrogen; [Formula 3] Wherein X 2 is a single bond, an oxygen atom, a sulfur atom, -S(=O) 2 -, an alkylene group having 1 to 20 carbon atoms, an extended alkenyl group having 2 to 20 carbon atoms, and 2 to 20 An alkynyl group of a carbon atom, -C(=O)-X 1 - or -X 1 -C(=O)-, wherein X 1 is a single bond, an oxygen atom, a sulfur atom, -S(=O) 2 An alkylene group having 1 to 20 carbon atoms, an extended alkenyl group having 2 to 20 carbon atoms or an alkynyl group having 2 to 20 carbon atoms, and W is an aryl group containing at least one halogen atom. 根據申請專利範圍第1項之嵌段共聚物,其中該在X射線繞射法中所展現半峰全寬係從0.2奈米-1至1.5奈米-1之峰所在的該散射向量(g)範圍為從1奈米-1至3奈米-1The patentable scope of application of the block copolymer of item 1, wherein the X-ray diffraction method is the scattering vector (g FWHM line peak from 0.2 nm to 1.5 nm -1 -1 lies show ) ranging from 1 nm to 3 nm -1 -1. 根據申請專利範圍第1項之嵌段共聚物,其中該在X射線繞射法中所展現在從0.5奈米-1至10奈米-1之散射向量(q)範圍內的峰之該半峰全寬係從0.3奈米-1至0.9奈米-1The patentable scope of application of the block copolymer of item 1, wherein the X-ray diffraction method, the half of the peak from 0.5 nm to 10 nm -1 scattering vector of -1 (q) show peak in the range of The full width is from 0.3 nm -1 to 0.9 nm -1 . 根據申請專利範圍第1項之嵌段共聚物,其中其形成在掠角入射小角度X射線散射法(grazing incidence small angle X ray scattering)中展現面內相位繞射圖案的層。 The block copolymer according to claim 1, wherein the layer exhibits a layer exhibiting an in-plane phase diffraction pattern in a grazing incidence small angle X ray scattering. 根據申請專利範圍第1項之嵌段共聚物,其中其 數量平均分子量係從3,000至300,000。 a block copolymer according to claim 1 of the scope of the patent application, wherein The number average molecular weight is from 3,000 to 300,000. 根據申請專利範圍第1項之嵌段共聚物,其中其多分散度(Mw/Mn)係從1.01至1.60。 The block copolymer according to the first aspect of the patent application, wherein the polydispersity (Mw/Mn) is from 1.01 to 1.60. 一種聚合物層,其包含申請專利範圍第1項之嵌段共聚物的自組裝產物。 A polymer layer comprising the self-assembled product of the block copolymer of claim 1 of the patent. 根據申請專利範圍第7項之聚合物層,其中其在掠角入射小角度X射線散射法中展現面內相位繞射圖案。 A polymer layer according to claim 7 wherein the in-plane phase diffraction pattern is exhibited in a grazing angle incident small angle X-ray scattering method. 一種形成聚合物層之方法,其包含形成包含申請專利範圍第1項之嵌段共聚物的自組裝產物之聚合物層。 A method of forming a polymer layer comprising forming a polymer layer comprising a self-assembled product of the block copolymer of claim 1 of the patent. 一種圖案形成方法,其包括自一含有基板及形成於該基板上並包含申請專利範圍第1項之嵌段共聚物的自組裝產物之聚合物層的層合物選擇性移除該嵌段共聚物之該第一嵌段或該第二嵌段。 A pattern forming method comprising selectively removing the block copolymer from a laminate comprising a substrate and a polymer layer formed on the substrate and comprising the self-assembled product of the block copolymer of claim 1 The first block or the second block of matter.
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TW103142955A TWI586692B (en) 2013-12-06 2014-12-08 Monomer and block copolymer
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TW103142805A TWI596128B (en) 2013-12-06 2014-12-08 Block copolymer

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