TWI553807B - 封裝結構 - Google Patents

封裝結構 Download PDF

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Publication number
TWI553807B
TWI553807B TW103120581A TW103120581A TWI553807B TW I553807 B TWI553807 B TW I553807B TW 103120581 A TW103120581 A TW 103120581A TW 103120581 A TW103120581 A TW 103120581A TW I553807 B TWI553807 B TW I553807B
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Taiwan
Prior art keywords
wafer
package structure
selectively
disposed
circuit layer
Prior art date
Application number
TW103120581A
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English (en)
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TW201546985A (zh
Inventor
黃志恭
賴威仁
劉文俊
Original Assignee
思鷺科技股份有限公司
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Application filed by 思鷺科技股份有限公司 filed Critical 思鷺科技股份有限公司
Priority to TW103120581A priority Critical patent/TWI553807B/zh
Priority to US14/663,450 priority patent/US20150364448A1/en
Priority to CN201510319027.1A priority patent/CN105280834B/zh
Publication of TW201546985A publication Critical patent/TW201546985A/zh
Application granted granted Critical
Publication of TWI553807B publication Critical patent/TWI553807B/zh

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Description

封裝結構
本發明是有關於一種封裝結構，且特別是有關於一種可選擇性形成圖案化線路層於環氧樹脂上的封裝結構。
現今之資訊社會下，人類對電子產品之依賴性與日俱增。為因應現今電子產品高速度、高效能、且輕薄短小的要求，具有可撓曲特性之軟性電路板已逐漸應用於各種電子裝置中，例如：行動電話(Mobile Phone)、筆記型電腦(Notebook PC)、數位相機(digital camera)、平板電腦(tablet PC)、印表機(printer)與光碟機(disk player)等。
一般而言，封裝結構的製作主要是透過多層介電層的彼此堆疊，並於各層介電層的表面上進行前處理、濺鍍(sputter)、壓合銅或電鍍銅，再進行黃光製程，以於介電層的表面上形成線路層及導通孔。然而，此製程的步驟繁複，且濺鍍的製程的成本較高。此外，利用圖案化乾膜層作電鍍屏障所形成的圖案化線路層較難以達到現今對細線路(fine pitch)的需求。再者，介電層的材料多半採用聚醯亞胺、半固化樹脂(prepreg,PP)或是ABF (Ajinomoto build-up film)樹脂等，其價格較昂貴。因此，目前封裝結構的製作不僅步驟繁複，且成本亦偏高。有鑑於此，本發明揭示如何將可選擇性電鍍環氧樹脂做為介電層，並選擇性地電鍍形成圖案化線路層於此介電層上，此選擇性電鍍而形成的圖案化線路層設置於介電層的表面之下或為提供更大的電流通量而電鍍加厚至突出於介電層的表面之上，並揭示如何將此技術應用於封裝結構上，為現今業界提供解決問題的方法。
本發明提供一種封裝結構，其製程步驟簡單，且比現有技術具有較大的線路設計彈性。
本發明的一種封裝結構，包括一第一晶片、一第一可選擇性電鍍環氧樹脂、一第一圖案化線路層以及複數個第一導通孔。第一晶片包括複數個第一焊墊、一主動表面以及相對主動表面的一背面，第一焊墊設置於主動表面上。第一可選擇性電鍍環氧樹脂，覆蓋第一晶片並包含非導電的金屬複合物。第一圖案化線路層直接設置於第一可選擇性電鍍環氧樹脂的一表面上，第一可選擇性電鍍環氧樹脂暴露圖案化線路層的一上表面。上表面低於第一可選擇性電鍍環氧樹脂的表面或與表面共平面。第一導通孔直接設置於第一可選擇性電鍍環氧樹脂，以電性連接第一焊墊至第一圖案化線路層。
基於上述，本發明主要是利用可選擇性電鍍環氧樹脂的 可選擇性電鍍的特性，可直接於可選擇性電鍍環氧樹脂的表面上直接電鍍形成圖案化線路層及導通孔等導電結構，可選擇性電鍍環氧樹脂包含有非導電的金屬複合物，以使可選擇性電鍍環氧樹脂在選擇性地接受雷射照射後，可選擇性地於其表面上直接電鍍形成圖案化線路層、導通孔或是接墊等導電結構。並且，此選擇性電鍍而形成的圖案化線路層位於可選擇性電鍍環氧樹脂的表面之下，或是為了提供更大的電流通量而電鍍加厚至圖案化線路層的表面突出於可選擇性電鍍環氧樹脂的表面之上。因此，可選擇性電鍍環氧樹脂可適用於各種封裝結構，以於利用其特性而於其上形成線路層。並且，據此形成的圖案化線路層可符合微細線路的標準，更提供了封裝結構上的連接線路的設計彈性。因此，本發明的封裝結構不僅可簡化製程步驟，亦提供了封裝結構的圖案化線路層的設計彈性，且其圖案化線路層更可符合微細線路的標準。
為讓本發明的上述特徵和優點能更明顯易懂，下文特舉實施例，並配合所附圖式作詳細說明如下。
10‧‧‧離形膜
100、200a~o、300a~e、400a~b‧‧‧封裝結構
105‧‧‧中介板
110‧‧‧第一晶片
112‧‧‧主動表面
114‧‧‧背面
116‧‧‧第一焊墊
120‧‧‧第一可選擇性電鍍環氧樹脂
122‧‧‧第三表面
124‧‧‧第四表面
130‧‧‧第一圖案化線路層
135‧‧‧第三圖案化線路層
140‧‧‧第一導通孔
145‧‧‧第三導通孔
150‧‧‧焊球
160、320a‧‧‧第二可選擇性電鍍環氧樹脂
162‧‧‧凹穴
164‧‧‧第一表面
166‧‧‧第二表面
170‧‧‧第二圖案化線路層
180‧‧‧金屬柱
190‧‧‧接墊
195‧‧‧第二導通孔
210、310、360‧‧‧第二晶片
210、310、340‧‧‧第三晶片
212、312‧‧‧第二焊墊
220、330‧‧‧導線
240‧‧‧屏蔽金屬層
250、350‧‧‧導通孔、第四導通孔
230‧‧‧第三可選擇性電鍍環氧樹脂
320‧‧‧封裝膠體
330a‧‧‧第二圖案化線路層
322‧‧‧第五表面
410‧‧‧介電層
420‧‧‧重配置線路層
412‧‧‧外表面
圖1A至圖1D是依照本發明的一實施例的一種封裝結構的製作流程的示意圖。
圖2是依照本發明的一實施例的一種封裝結構的剖面示意 圖。
圖3是依照本發明的一實施例的一種封裝結構的剖面示意圖。
圖4至圖15是依照本發明的不同實施例的封裝結構的剖面示意圖。
圖16至圖18是依照本發明的一實施例的封裝結構的製作流程的示意圖。
圖19是依照本發明的一實施例的封裝結構的製作流程的示意圖。
圖20至圖24是依照本發明的不同實施例的封裝結構的剖面示意圖。
圖25是依照本發明的一實施例的封裝結構的製作流程的示意圖。
圖26至圖27是依照本發明的不同實施例的封裝結構的剖面示意圖。
有關本發明之前述及其他技術內容、特點與功效，在以下配合參考圖式之各實施例的詳細說明中，將可清楚的呈現。以下實施例中所提到的方向用語，例如：「上」、「下」、「前」、「後」、「左」、「右」、「內」、「外」等，僅是參考附加圖式的方向。因此，使用的方向用語是用來說明，而並非用來限制本發明。並且，在 下列各實施例中，相同或相似的元件將採用相同或相似的標號。
圖1A至圖1D是依照本發明的一實施例的一種封裝結構的製作流程的示意圖。須說明的是，圖1A為封裝結構的製作流程的一俯視示意圖，圖1B至圖1D則為封裝結構的製作流程的剖面示意圖。本實施例的封裝結構的製作方法包括下列步驟：請參照圖1A以及圖1B，首先，將多個第一晶片110設置於一離形膜10上，各第一晶片110包括多個第一焊墊116、一主動表面112以及相對主動表面112的一背面114。第一焊墊116設置於主動表面112上，且任兩相鄰的晶片110之間如圖1A所示具有一第一間距G1。本實施例的離型膜10可為耐高溫的離型膜。接著，請參照圖1B，將離型膜10由中心往週緣的方向拉伸，以延展離型膜10，使任兩相鄰的晶片110之間具有一第二間距G2，且第二間距G2大於第一間距G1，也就是透過拉伸及延展離型膜10來增加任兩相鄰的晶片110之間的間距，以方便進行後續的圖案化線路層及單體化製程。接著，請參照圖1C，形成一第一可選擇性電鍍環氧樹脂120於離形膜10上，以覆蓋第一晶片110。在本實施例中，第一晶片110是以背面114貼附於離形膜10上，而第一可選擇性電鍍環氧樹脂120是覆蓋第一晶片110的主動表面112及第一焊墊116。之後，請參照圖1D，移除離形膜10以暴露出各第一晶片110的背面114。
接著，便可利用第一可選擇性電鍍環氧樹脂120之可選擇性電鍍的特性，直接於其表面上形成如圖1D所示的第一圖案化 線路層130。具體而言，本實施例主要是直接於可選擇性電鍍的環氧樹脂120上進行選擇性電鍍，以直接於其上形成微細的圖案化線路層130。在本實施例中，第一可選擇性電鍍環氧樹脂120包含有非導電的金屬複合物，其中，非導電的金屬複合物可包括鈀、銅、鉻。
詳細來說，於第一可選擇性電鍍環氧樹脂120的表面選擇性地電鍍而形成第一圖案化線路層130及第一導通孔140的步驟可包括：在第一可選擇性電鍍環氧樹脂120中欲形成第一圖案化線路層130的表面122上，以雷射對欲形成第一圖案化線路層130的部份進行選擇性照射，使被照射處的非導電的金屬複合物破壞而釋放對還原金屬化具有高活性的重金屬晶核，接著，再對此被照射處進行化學還原金屬化處理，以選擇性地電鍍被照射處而形成第一圖案化線路層130。當然，本實施例僅用以舉例說明而並非以此為限。
同時，本實施例更可利用同樣的手法，直接於第一可選擇性電鍍環氧樹脂120上形成多個第一導通孔140，使第一導通孔140連通各第一晶片110的第一焊墊116至對應的第一圖案化線路層130。如此，多個封裝結構100即初步完成。接著，可將圖1D所示的多個封裝結構100結構單體化，也就是沿著圖1D的虛線對進行一切割製程，以得到多個各自獨立的封裝結構100。
圖2是依照本發明的一實施例的一種封裝結構的剖面示意圖。依上述製程所製作出的封裝結構100可如圖2所示包括一 第一晶片110、一第一可選擇性電鍍環氧樹脂120、一第一圖案化線路層130以及多個第一導通孔140。第一晶片110包括多個第一焊墊116、一主動表面112以及相對主動表面112的一背面114。第一焊墊116設置於主動表面112上。第一可選擇性電鍍環氧樹脂120覆蓋第一晶片110並包含非導電的金屬複合物。第一圖案化線路層130直接設置於第一可選擇性電鍍環氧樹脂120的一表面上。具體而言，第一可選擇性電鍍環氧樹脂120包括相對的一第三表面122以及一第四表面124，在本實施例中，第一圖案化線路層130是設置於第三表面122上。第一導通孔140直接設置於第一可選擇性電鍍環氧樹脂120，以電性連接第一焊墊116至位於第三表面122上的第一圖案化線路層130。
圖3是依照本發明的一實施例的一種封裝結構的剖面示意圖。進一步而言，封裝結構100更可包括一中介板(interposer)105，中介板105可包括一第二可選擇性電鍍環氧樹脂160、一第二圖案化線路層170、多個金屬柱180、多個接墊190以及多個第二導通孔195。第二可選擇性電鍍環氧樹脂160的材料大致上相同於第一可選擇性電鍍環氧樹脂120，其亦包含有非導電的金屬複合物。因此，封裝結構100亦可利用第二可選擇性電鍍環氧樹脂160之可選擇性電鍍的特性，直接於其表面上形成第二圖案化線路層170、第二導通孔195及接墊190。第二可選擇性電鍍環氧樹脂160如圖包括多個凹穴162、一第一表面164以及相對於第一表面164的一第二表面166。凹穴162設置於第一表面164上。第二圖案化 線路層170透過選擇性電鍍而直接設置於第一表面164上，以電性連接對應的金屬柱180。
承上述，金屬柱180分別設置於凹穴162內，並突出於第一表面164。接墊190透過選擇性電鍍而直接設置於第二表面166上，第二導通孔195直接設置於第二可選擇性電鍍環氧樹脂170內，以電性連接接墊190至對應的金屬柱180。在本實施例中，封裝結構100更可包括多個焊球150，其設置於金屬柱180與第三表面122之間，並電性連接第一圖案化線路層130，以使第一晶片110透過焊球150而電性連接至中介板105的金屬柱180。如此，封裝結構100可再透過接墊190而與其它的外部電子元件(例如一主機板)進行電性連接。
圖4至圖15是依照本發明的不同實施例的封裝結構的剖面示意圖。請先參照圖4，本實施例的封裝結構200a更包括一第二晶片210，設置於第一可選擇性電鍍環氧樹脂120的第三表面122上並電性連接第一圖案化線路層130。具體來說，第二晶片210是透過覆晶接合的方式設置於第一可選擇性電鍍環氧樹脂120的第三表面122上，並與位在第三表面122的第一圖案化線路層130電性連接。第二晶片210可位於焊球150之間。焊球150設置於金屬柱180與第三表面122之間，並電性連接第一圖案化線路層130，之後，第一晶片110及第二晶片210可再例如透過焊球150而電性連接至中介板105的金屬柱180上。
請參照圖5，在此必須說明的是，本實施例的封裝結構 200b與圖4的封裝結構200a相似，因此，本實施例沿用前述實施例的元件標號與部分內容，其中採用相同的標號來表示相同或近似的元件，並且省略了相同技術內容的說明。關於省略部分的說明可參考前述實施例，本實施例不再重複贅述。以下將針對本實施例的封裝結構200b與圖4的封裝結構200a的差異做說明。
本實施例的第二晶片210是設置於第一可選擇性電鍍環氧樹脂120的第四表面124上。詳細而言，本實施例的封裝結構200b更可包括多條導線220、多個第三導通孔145以及一封裝膠體230。第三導通孔145如圖5所示貫穿第一可選擇性電鍍環氧樹脂120，以連通第一可選擇性電鍍環氧樹脂120的第四表面124與位在第三表面122的第一圖案化線路層130。第二晶片210以背對背的方式疊設於第一晶片110上並位於第四表面124，再透過導線220電性連接至第三導通孔145。之後，再以封裝膠體230覆蓋第二晶片210以及導線220。在本實施例中，封裝膠體230的成分可相同於可選擇性電鍍環氧樹脂120、160，亦可為一般的封裝膠體。
此外，封裝結構更可於第一可選擇性電鍍環氧樹脂120或是封裝膠體230的一外表面上直接電鍍而形成如圖5所示的一屏蔽金屬層240，其全面性覆蓋第一可選擇性電鍍環氧樹脂120或是封裝膠體230的外表面，以作為降低電場雜訊耦合及電磁屏蔽之用。在本實施例中，屏蔽金屬層240更可連接至一接地電極，以提供更好的電磁屏蔽效果。
請參照圖6，相似於前述實施例，本實施例的封裝結構200c亦包括第二晶片210，且第二晶片210包括多個第二焊墊212，惟本實施例的第二晶片210是疊設於第一晶片110的主動表面112上，也就是說，第二晶片210是以面對面的方式疊設於第一晶片110上，並以其第二焊墊212電性連接第一焊墊116，且第一可選擇性電鍍環氧樹脂120亦覆蓋第二晶片210。
請再接續參照圖7，相似於前述實施例，本實施例的封裝結構200d亦包括第二晶片210，且第二晶片210亦包括多個第二焊墊212，惟本實施例的第二晶片210是以其未設置第二焊墊212的背面疊設於第一晶片110的主動表面112上，也就是說，第二晶片210是以背對面的方式疊設於第一晶片110上，並透過多條導線220將第二焊墊212電性連接到至少部份的第一焊墊116，且第一可選擇性電鍍環氧樹脂120亦覆蓋第二晶片210及導線220。第一導通孔140則連通其他的第一焊墊116至第三表面122，以使第一晶片110及第二晶片210能透過第一導通孔140、第一圖案化線路層130及焊球150所形成的電流導通路徑而例如再電性連接至中介板105的金屬柱180。
當然，在本發明的一實施例中，焊球150亦可不同於前述實施例所述的設置於第一可選擇性電鍍環氧樹脂120的第三表面122，而是如圖8所示的設置於第一可選擇性電鍍環氧樹脂120的第四表面124。第一圖案化線路層130則是如前所述地直接設置於第三表面122上並電性連接第一導通孔140。如此配置，封裝結 構200e更可如圖8所示包括一第三圖案化線路層135以及第三導通孔145。第三圖案化線路層135相同於第一圖案化線路層130，亦是透過選擇性電鍍的方法直接形成於第一可選擇性電鍍環氧樹脂120的第四表面124上。第三導通孔145貫穿第一可選擇性電鍍環氧樹脂120以連通第一圖案化線路層130與第三圖案化線路層135。焊球150則是配置於第四表面124並電性連接第三圖案化線路層135。如此，中介板105的金屬柱180即可透過焊球150而設置於第一可選擇性電鍍環氧樹脂120的第四表面124上。
承上述，本實施例的封裝結構200e更可包括一第二晶片210以及一封裝膠體230。第二晶片210可設置於第三表面122上並電性連接第一圖案化線路層130，而封裝膠體230則覆蓋第二晶片210。在本實施例中，封裝膠體230的成分可相同於可選擇性電鍍環氧樹脂120、160，亦可為一般的封裝膠體。如此，第一晶片110及第二晶片210即可透過第一導通孔140、第三導通孔145、第一圖案化線路層130、第三圖案化線路層135及焊球150所形成的電流導通路徑而電性連接至中介板105的金屬柱180。
當然，本實施例更可如圖9所示於封裝膠體230的上表面再往上堆疊一第三晶片310。第三晶片310可相似於第二晶片210的配置方式，透過貫穿第一可選擇性電鍍環氧樹脂120的導通孔250電性連接至第一圖案化線路層130，並以封裝膠體320覆蓋第三晶片310。本實施例並不局限封裝結構的堆疊層數及電性連接方式。
請參照圖10，本實施例的封裝結構200h可包括至少一第二晶片210(繪示為兩個，但不以此為限)以及一第三可選擇性電鍍環氧樹脂230。第二晶片210可設置於第三表面122上並電性連接第一圖案化線路層130，而第三可選擇性電鍍環氧樹脂230則覆蓋第二晶片210。在本實施例中，第三可選擇性電鍍環氧樹脂230的成分可相同於可選擇性電鍍環氧樹脂120、160，以利用可選擇性電鍍的特性於第三可選擇性電鍍環氧樹脂230上直接電鍍形成圖案化線路層或導通孔，亦可為一般的封裝膠體。在本實施例中，各第二晶片210可透過打線接合或是覆晶接合等方式電性連接至第一圖案化線路層130，圖10僅用以舉例說明，而非用以限制本發明的電性連接方式。
此外，上述的多個第二晶片210亦可如圖11所示彼此堆疊而設置於第三表面122上，較靠近第三表面122的第二晶片210可例如透過覆晶接合電性連接至第一圖案化線路層130，而較遠離第三表面122的第二晶片210則可例如透過打線接合而電性連接至第一圖案化線路層130。當然，圖11僅用以舉例說明，而非用以限制本發明的第二晶片210的電性連接方式。
請接續參照圖12，在本實施例中，封裝結構200j更可包括至少一第三晶片310(繪示為兩個，但不以此為限)，其設置於.第三可選擇性電鍍環氧樹脂230之第五表面322上。詳細來說，第三可選擇性電鍍環氧樹脂230包括一第五表面322，其相對於第三可選擇性電鍍環氧樹脂230用以覆蓋第三表面122的表面，而 第三晶片310即是設置於第五表面322上。此外，本實施例的封裝結構200j更可包括多個第四導通孔250，其貫穿第三可選擇性電鍍環氧樹脂230以電性連接第一圖案化線路層130至第五表面322，如此，第三晶片310則可設置於第五表面322上並例如透過打線接合或是覆晶接合等方式電性連接至第四導通孔250。當然，圖12僅用以舉例說明，而非用以限制本發明的第三晶片310的電性連接方式。本實施例的封裝結構可例如透過多個焊球150而電性連接至一主機板上，當然，本發明並不以此為限。
請參照圖13，不同於如圖10至圖12所示的實施例，本實施例的第二晶片210是設置於第四表面124上，並電性連接至第三圖案化線路層135，而第三可選擇性電鍍環氧樹脂230則覆蓋第二晶片210。在本實施例中，第三可選擇性電鍍環氧樹脂230的成分可相同於可選擇性電鍍環氧樹脂120、160，以利用可選擇性電鍍的特性於第三可選擇性電鍍環氧樹脂230上直接電鍍形成圖案化線路層或導通孔，亦可為一般的封裝膠體。在本實施例中，各第二晶片210可透過打線接合或是覆晶接合等方式電性連接至第三圖案化線路層135，圖13僅用以舉例說明，而非用以限制本發明的電性連接方式。
請接續參照圖14，在本實施例中，封裝結構2001更可包括至少一第三晶片310(繪示為兩個，但不以此為限)，其設置於第三可選擇性電鍍環氧樹脂230上，第三可選擇性電鍍環氧樹脂230覆蓋第二晶片210及第四表面124。詳細來說，第三可選擇性 電鍍環氧樹脂230包括一第五表面322，其相對於第三可選擇性電鍍環氧樹脂230用以覆蓋第四表面122的表面，而第三晶片310即是設置於第五表面322上。此外，本實施例的封裝結構2001更可包括多個第四導通孔250，其貫穿第三可選擇性電鍍環氧樹脂230以電性連接第三圖案化線路層135至第五表面322，如此，第三晶片310則可設置於第五表面322上並例如透過打線接合或是覆晶接合等方式電性連接至第四導通孔250。當然，圖14僅用以舉例說明，而非用以限制本發明的第三晶片310的電性連接方式。之後，本實施例的封裝結構可例如透過多個焊球150而電性連接至一主機板上，當然，本發明並不以此為限。
請參照圖15，如圖13所示的封裝結構更可包括至少一第三晶片310，第三晶片310可例如透過覆晶接合的方式設置於第一晶片110的主動表面112上並電性連接第一焊墊116，且第一可選擇性電鍍環氧樹脂120亦覆蓋第三晶片310。當然，在本發明的其他實施例中，設置於第一晶片110的主動表面112上的第三晶片310亦可例如透過打線接合的方式電性連接第一焊墊116。或者，第三晶片310的數量可為多個，並彼此堆疊於第一晶片110的主動表面112上，較靠近主動表面112的第三晶片310可例如透過覆晶接合電性連接至第一焊墊116，而較遠離主動表面112的第三晶片310則可例如透過打線接合而電性連接至第一焊墊116上。圖15僅用以舉例說明，而非用以限制本發明的第三晶片310的電性連接方式。
圖16至圖18是依照本發明的一實施例的封裝結構的製作流程的示意圖。在此須說明的是，圖16繪示了如何將例如圖8所示的第二晶片210設置於第一可選擇性電鍍環氧樹脂120的第三表面122上的方法，其包括下列步驟：首先，可如圖16所示，提供一陣列封裝結構，其包括多個第一晶片110、一第一可選擇性電鍍環氧樹脂120、多個第一圖案化線路層130以及多個第一導通孔140。在本實施例中，第一可選擇性電鍍環氧樹脂120覆蓋第一晶片110，第一圖案化線路層130則直接設置於第一可選擇性電鍍環氧樹脂120的第三表面122上，並分別透過對應的第一導通孔140電性連接至對應的第一晶片110。而多個第二晶片210可先以未設置第二焊墊212的背面貼附於離形膜10上，各第二晶片210包括多個焊墊212、主動表面以及相對主動表面的一背面，焊墊212設置於主動表面上，且各第二晶片210以其背面設置於離型膜10上。相似於圖1A至圖1C的實施例，任兩相鄰的第二晶片210之間原本具有一第一間距，之後，將離型膜10由中心往週緣的方向拉伸，以延展離型膜10，使任兩相鄰的第二晶片210之間具有一第二間距G2，此第二間距大於原本的第一間距，以便於進行後續的圖案化線路層以及單體化製程。接著再透過離型膜10將第二晶片210壓合於下方對應的第一可選擇性電鍍環氧樹脂120的第三表面122上，並使第二焊墊212與第三表面122上的第一圖案化線路層130電性連接。之後，移除離型膜10，並進行單體化製程，也就是沿圖16中的虛線切割第一可選擇性電鍍環氧樹脂 120，以形成多個彼此獨立的封裝結構。
此外，相似於前述的製程步驟，在圖17所示的封裝結構中，封裝結構200n更可包括一第三晶片310，其設置於第一晶片110的主動表面112上，並透過多條導線330將第三晶片310電性連接至第一焊墊116。第一可選擇性電鍍環氧樹脂120亦覆蓋此第三晶片310。相似的，在圖18所示的封裝結構中，封裝結構200o的第三晶片310亦可以面對面的方式疊設於第一晶片110的主動表面112上，也就是說第三晶片310以其焊墊電性連接第一焊墊116，而第一可選擇性電鍍環氧樹脂120同樣地覆蓋此第三晶片310。
圖19是依照本發明的一實施例的封裝結構的製作流程的示意圖。在本發明的一實施例中，可如圖19所示，利用兩個可選擇性電鍍環氧樹脂120、320a分別模封多個晶片110、210、310、340，並利用可選擇性電鍍環氧樹脂120、320a的可選擇性電鍍的特性，於可選擇性電鍍環氧樹脂120、320a上直接電鍍形成對應的導通孔及圖案化線路層，以分別將晶片110、210、310、340電性導通至可選擇性電鍍環氧樹脂120、320a的表面，以分別形成如圖19所示的一第一陣列封裝結構以及一第二陣列封裝結構。詳細而言，第一陣列封裝結構至少包括多個第一晶片110、一第一可選擇性電鍍環氧樹脂120、多個第一圖案化線路層130以及多個第一導通孔140。第二陣列封裝結構至少包括多個第二晶片310、一第二可選擇性電鍍環氧樹脂320a、多個第二圖案化線路層330a以 及多個第二導通孔350。第二可選擇性電鍍環氧樹脂320a覆蓋第二晶片310，第二圖案化線路層330a設置於第二可選擇性電鍍環氧樹脂320a的一第五表面322上，並分別透過對應的第二導通孔350電性連接至對應的第二晶片310。再將第一陣列封裝結構以及第二陣列封裝結構的兩個可選擇性電鍍環氧樹脂120、320壓合在一起，以利用對應的導通孔140、350及圖案化線路層130、330電性導通晶片110、210、310、340。之後，再沿虛線切割可選擇性電鍍環氧樹脂120、320以形成多個獨立的封裝結構。
圖20至圖24是依照本發明的不同實施例的封裝結構的剖面示意圖。在此需說明的是，圖20至圖24是用以進一步舉例說明圖19所示的製作方法所能形成的幾種封裝結構。請先參照圖20，本實施例的封裝結構300a更包括第一晶片110及一第二晶片310、第一可選擇性電鍍環氧樹脂120、一第二可選擇性電鍍環氧樹脂320a及多個第四導通孔350。第一晶片110包括多個第一焊墊116，第一可選擇性電鍍環氧樹脂120覆蓋第一晶片110。第二晶片310包括多個第二焊墊312。第二可選擇性電鍍環氧樹脂320a覆蓋第二晶片310並包括一第五表面322，其連接第一可選擇性電鍍環氧樹脂120的第三表面122。
本實施例的第二可選擇性電鍍環氧樹脂320a與第一可選擇性電鍍環氧樹脂120的材料大致相同，因此，本實施例可透過第二可選擇性電鍍環氧樹脂320a的可選擇性電鍍的特性而直接電鍍形成第四導通孔350於第二可選擇性電鍍環氧樹脂320a，使第 四導通孔350直接設置於第二可選擇性電鍍環氧樹脂320a上，以連通第二焊墊312至第五表面322，並電性連接至位於第三表面122的第一圖案化線路層130。如此，第二晶片310透過第四導通孔350而電性連接至第一圖案化線路層130，再透過第三導通孔145而電性連接至焊球150。如此，第一晶片110及第二晶片310即可透過焊球150而電性連接至中介板105的金屬柱180。
請接續參照圖21，在此必須說明的是，本實施例之封裝結構300b與圖20之封裝結構300a相似，因此，本實施例沿用前述實施例的元件標號與部分內容，其中採用相同的標號來表示相同或近似的元件，並且省略了相同技術內容的說明。關於省略部分的說明可參考前述實施例，本實施例不再重複贅述。以下將針對本實施例之封裝結構300b與圖20之封裝結構300a的差異做說明。在本實施例中，封裝結構300b更可包括一第三晶片340，其是以面對面的方式疊設於第二晶片310上，並與第二晶片310電性連接。也就是說，第三晶片340是利用覆晶接合的方式與第二晶片310形成電性連接。第二可選擇性電鍍環氧樹脂320a亦覆蓋第三晶片340。如此，第三晶片340可透過第二晶片310、第四導通孔350而電性連接至第一圖案化線路層130，再透過第三導通孔145而電性連接至焊球150。之後，第一晶片110、第二晶片310及第三晶片340可例如再透過焊球150而電性連接至中介板105的金屬柱180上。
請接續參照圖22，在此必須說明的是，本實施例之封裝 結構300c與圖21之封裝結構300b相似，因此，本實施例沿用前述實施例的元件標號與部分內容，其中採用相同的標號來表示相同或近似的元件，並且省略了相同技術內容的說明。關於省略部分的說明可參考前述實施例，本實施例不再重複贅述。以下將針對本實施例之封裝結構300c與圖21之封裝結構300b的差異做說明。請參照圖22，在本實施例中，封裝結構300c的第三晶片340亦是設置於第二晶片310上，然而，本實施例的第三晶片340是透過打線接合的方式與第二晶片310電性連接。第三可選擇性電鍍環氧樹脂310亦覆蓋第三晶片340。如此，第一晶片110、第二晶片310及第三晶片340可例如再透過焊球150而電性連接至中介板105的金屬柱180上。
請接續參照圖23，本實施例之封裝結構300d與圖22之封裝結構300c相似，因此，本實施例沿用前述實施例的元件標號與部分內容，其中採用相同的標號來表示相同或近似的元件，並且省略了相同技術內容的說明。關於省略部分的說明可參考前述實施例，本實施例不再重複贅述。以下將針對本實施例之封裝結構300d與圖22之封裝結構300c的差異做說明。請參照圖23，在本實施例中，封裝結構300d的第三晶片210是設置於第一晶片110上，並透過打線接合的方式與第一晶片110電性連接，第一可選擇性電鍍環氧樹脂120亦覆蓋第三晶片210。之後，第一晶片110、第二晶片310及第三晶片210可例如再透過焊球150而電性連接至中介板105的金屬柱180上。
圖24所示的實施例之封裝結構300e與圖23之封裝結構300d相似，因此，本實施例沿用前述實施例的元件標號與部分內容，其中採用相同的標號來表示相同或近似的元件，並且省略了相同技術內容的說明。關於省略部分的說明可參考前述實施例，本實施例不再重複贅述。以下將針對本實施例之封裝結構300e與圖23之封裝結構300d的差異做說明。請參照圖24，在本實施例中，封裝結構300e的第三晶片210是以面對面的方式疊設於第一晶片110上，也就是以覆晶接合的方式與第一晶片110電性連接，第一可選擇性電鍍環氧樹脂120除了覆蓋第一晶片110外，亦覆蓋第三晶片210。之後，第一晶片110、第二晶片310及第三晶片210可例如再透過焊球150而電性連接至中介板105的金屬柱180上。
圖25是依照本發明的一實施例的封裝結構的製作流程的示意圖。在本發明的一實施例中，封裝結構的製作流程亦可如圖25所示，先將多個第一晶片110設置於離形膜10上，第一晶片110包括多個第一焊墊116、主動表面112以及相對主動表面112的背面114，第一焊墊116設置於主動表面112上。本實施例的製作流程與圖1A至圖1D的製作流程相似，惟本實施例的第一晶片110是以主動表面112貼附於離形膜10上。之後將離型膜10由中心往週緣的方向拉伸，以延展離型膜10，使任兩相鄰的晶片110之間由第一間距延展為第二間距，且第二間距大於第一間距，也就是透過拉伸及延展離型膜10來增加任兩相鄰的晶片110之間的 距離，以方便進行後續的圖案化線路層及單體化製程。之後，再以第一可選擇性電鍍環氧樹脂120模封上述的多個第一晶片110，以使第一可選擇性電鍍環氧樹脂120覆蓋第一晶片110的背面114。之後，再利用第一可選擇性電鍍環氧樹脂120可直接電鍍的特性，直接形成圖案化線路層以及多個導通孔於第一可選擇性電鍍環氧樹脂120上。接著，再將離形膜10移除，以暴露第一焊墊116及主動表面112。之後，再進行一單體化製程，也就是例如沿虛線切割第一可選擇性電鍍環氧樹脂120，以形成多個獨立的封裝結構。
圖26至圖27是依照本發明的不同實施例的封裝結構的剖面示意圖。在此需說明的是，圖26至圖27為應用圖25的製作方法所製作出的結構而形成的幾種封裝結構。請先參照圖26，本實施例的封裝結構400a更包括一介電層410、一重配置線路層420以及一第二晶片310。介電層410設置於第一可選擇性電鍍環氧樹脂120的第三表面122上並覆蓋第一晶片110的第一焊墊116。本實施例的介電層410的材料可與前述的可選擇性電鍍環氧樹脂相同，因而可利用介電層410的可選擇性電鍍的特性，直接於介電層410上電鍍而直接形成重配置線路層420於介電層410並電性連接第一焊墊116至介電層410的一外表面412。重配置線路層420可如圖26所示之包括一導電柱以及圖案化線路層，以將第一焊墊116電性連接至介電層410的外表面412。如此，即可省去習知需先設置介電層，再於介電層上雷射雕刻導電孔、濺鍍金屬種 晶層、電鍍金屬層、凸塊下金屬化層(Under-Bump Metallization,UBM)，再透過曝光、顯影、蝕刻等製程來形成重配置線路層等繁複的製程。因此，本實施例可大幅簡化製程及生產成本。
承上述，本實施例可利用第一可選擇性電鍍環氧樹脂120可選擇電鍍的特性，直接於第一可選擇性電鍍環氧樹脂120的第四表面上進行選擇性電鍍而形成第一圖案化線路層130，使第一圖案化線路層130直接設置於第一可選擇性電鍍環氧樹脂120的第四表面124上，而第二晶片310則設置於第四表面124並電性連接至第一圖案化線路層130。並且，第一導通孔140貫穿第一可選擇性電鍍環氧樹脂120以及介電層410，以連通第一圖案化線路層130與重配置線路層420。如此，第二晶片310即可透過第一圖案化線路層130及第一導通孔140所形成的電流導通路徑而電性連接至位於介電層410的外表面412的重配置線路層420。焊球150則配置於外表面412上並電性連接重配置線路層420。之後，第一晶片110及第二晶片310可例如再透過焊球150而電性連接至主機板或中介板105的金屬柱180上。
圖27所示的實施例之封裝結構400b與圖26之封裝結構400a相似，因此，本實施例沿用前述實施例的元件標號與部分內容，其中採用相同的標號來表示相同或近似的元件，並且省略了相同技術內容的說明。關於省略部分的說明可參考前述實施例，本實施例不再重複贅述。以下將針對本實施例之封裝結構400b與圖26之封裝結構400a的差異做說明。請參照圖27，本實施例的 第二晶片310是設置於介電層410的外表面412上，並電性連接重配置線路層420。第一圖案化線路層130則配置於第一可選擇性電鍍環氧樹脂120的第四表面124上。第一導通孔140貫穿第一可選擇性電鍍環氧樹脂120，以連通重配置線路層420與第一圖案化線路層130。焊球150則是配置於第四表面124上並電性連接第一圖案化線路層130。之後，第一晶片110及第二晶片310可例如再透過焊球150而電性連接至中介板105的金屬柱180上。
綜上所述，本發明主要是利用可選擇性電鍍環氧樹脂的可選擇性電鍍的特性，可直接於可選擇性電鍍環氧樹脂的表面上直接電鍍形成圖案化線路層及導通孔等導電結構，可選擇性電鍍環氧樹脂包含有非導電的金屬複合物，以使可選擇性電鍍環氧樹脂在選擇性地接受雷射照射後，可選擇性地於其表面上直接電鍍形成圖案化線路層、導通孔或是接墊等導電結構。並且，此選擇性電鍍所形成的圖案化線路層可位於可選擇性電鍍環氧樹脂的表面之下，或是為了提供更大的電流通量而電鍍加厚至圖案化線路層的表面突出於可選擇性電鍍環氧樹脂的表面之上。因此，可選擇性電鍍環氧樹脂可適用於各種封裝結構，以於利用其特性而於其上形成線路層。並且，據此形成的圖案化線路層可符合微細線路的標準，更提供了封裝結構上的連接線路的設計彈性。因此，本發明的封裝結構不僅可簡化製程步驟，亦提供了封裝結構的圖案化線路層的設計彈性，且其圖案化線路層更可符合微細線路的標準。
雖然本發明已以實施例揭露如上，然其並非用以限定本發明，任何所屬技術領域中具有通常知識者，在不脫離本發明的精神和範圍內，當可作些許的更動與潤飾，故本發明的保護範圍當視後附的申請專利範圍所界定者為準。
100‧‧‧封裝結構
105‧‧‧中介板
110‧‧‧第一晶片
112‧‧‧主動表面
114‧‧‧背面
116‧‧‧第一焊墊
120‧‧‧第一可選擇性電鍍環氧樹脂
122‧‧‧第三表面
124‧‧‧第四表面
130‧‧‧第一圖案化線路層
140‧‧‧第一導通孔
150‧‧‧焊球
160‧‧‧第二可選擇性電鍍環氧樹脂
162‧‧‧凹穴
164‧‧‧第一表面
166‧‧‧第二表面
170‧‧‧第二圖案化線路層
180‧‧‧金屬柱
190‧‧‧接墊
195‧‧‧第二導通孔

Claims (31)

  1. 一種封裝結構，包括：一第一晶片，包括複數個第一焊墊、一主動表面以及相對該主動表面的一背面，該些第一焊墊設置於該主動表面上；一第一可選擇性電鍍環氧樹脂，覆蓋該第一晶片的主動表面及其上之複數第一焊墊並包含非導電的金屬複合物；一第一圖案化線路層與對外電性連接之接墊，直接設置於該第一可選擇性電鍍環氧樹脂的一表面上，該第一可選擇性電鍍環氧樹脂暴露該圖案化線路層的一上表面，該上表面低於該第一可選擇性電鍍環氧樹脂的該表面或與該表面共平面；以及複數個第一導通孔，設置於該第一可選擇性電鍍環氧樹脂，以電性連接該些第一焊墊至該第一圖案化線路層。
  2. 如申請專利範圍第1項所述的封裝結構，其中該非導電的金屬複合物包括鈀、鉻或銅複合物。
  3. 如申請專利範圍第1項所述的封裝結構，其中該第一可選擇性電鍍環氧樹脂適於受雷射光選擇性地照射，以選擇性地金屬化該非導電的金屬複合物。
  4. 如申請專利範圍第1項所述的封裝結構，更包括一中介板，該中介板包括：一第二可選擇性電鍍環氧樹脂，包括複數個凹穴、一第一表面以及相對於該第一表面的一第二表面，該些凹穴設置於該第一表面上，且該第二可選擇性電鍍環氧樹脂包含非導電的金屬複合 物；一第二圖案化線路層，直接設置於該第一表面上；複數個金屬柱，分別設置於該些凹穴內，並突出於該第一表面，該第二圖案化線路層電性連接對應的金屬柱，該第一晶片電性連接該些金屬柱；複數個接墊，直接設置於該第二表面上；以及複數個第二導通孔，設置於該第二可選擇性電鍍環氧樹脂內，以電性連接該些接墊至對應的金屬柱。
  5. 如申請專利範圍第4項所述的封裝結構，更包括：多個焊球，設置於該些金屬柱上，該第一晶片透過該些金屬柱電性連接至該中介板。
  6. 如申請專利範圍第1項所述的封裝結構，更包括一屏蔽金屬層，直接全面性覆蓋於該第一可選擇性電鍍環氧樹脂的一外表面。
  7. 如申請專利範圍第6項所述的封裝結構，其中該屏蔽金屬層連接至一接地電極。
  8. 如申請專利範圍第1項所述的封裝結構，其中該第一可選擇性電鍍環氧樹脂包括相對的一第三表面以及一第四表面並覆蓋該第一晶片的該主動表面及該些第一焊墊，該些第一導通孔連通該些第一焊墊至該第三表面，其中該第一圖案化線路層直接設置於該第三表面上。
  9. 如申請專利範圍第8項所述的封裝結構，更包括： 多個焊球，設置於該第三表面上並電性連接該第一圖案化線路層。
  10. 如申請專利範圍第9項所述的封裝結構，更包括：一第二晶片，設置於該第三表面上並電性連接該第一圖案化線路層，該第二晶片位於該些焊球之間。
  11. 如申請專利範圍第8項所述的封裝結構，更包括：複數個第三導通孔，貫穿該第一可選擇性電鍍環氧樹脂，以連通該第四表面與位在該第三表面的第一圖案化線路層；一第二晶片，設置於該第四表面上，並透過複數條導線電性連接至該些第三導通孔及其對應的第二圖案化線路層；以及一封裝膠體，覆蓋該第二晶片以及該些導線。
  12. 如申請專利範圍第8項所述的封裝結構，更包括一第二晶片，包括複數個第二焊墊，該第二晶片設置於該第一晶片的該主動表面上並以該些第二焊墊電性連接該些第一焊墊，該第一可選擇性電鍍環氧樹脂覆蓋該第二晶片。
  13. 如申請專利範圍第8項所述的封裝結構，更包括一第二晶片，設置於該第一晶片的該主動表面上並透過複數條導線電性連接至少部份的該些第一焊墊，該第一可選擇性電鍍環氧樹脂覆蓋該第二晶片及該些導線，該些第一導通孔連通其他的該些第一焊墊至該第三表面。
  14. 如申請專利範圍第8項所述的封裝結構，其中該第一圖案化線路層直接設置於該第三表面上並電性連接該些第一導通 孔，該封裝結構更包括：一第三圖案化線路層，直接設置於該第四表面上；複數個第三導通孔，貫穿該第一可選擇性電鍍環氧樹脂以連通該第一圖案化線路層與該第三圖案化線路層；以及複數個焊球，配置於該第四表面並電性連接該第三圖案化線路層。
  15. 如申請專利範圍第14項所述的封裝結構，更包括：至少一第二晶片，設置於該第三表面並電性連接該第一圖案化線路層。
  16. 如申請專利範圍第15項所述的封裝結構，更包括：一第三可選擇性電鍍環氧樹脂，覆蓋該至少一第二晶片。
  17. 如申請專利範圍第16項所述的封裝結構，其中該第三可選擇性電鍍環氧樹脂包括一第五表面，其相對於該第三可選擇性電鍍環氧樹脂覆蓋該第三表面的表面，該封裝結構更包括：複數個第四導通孔，貫穿該第三可選擇性電鍍環氧樹脂以電性連接該第一圖案化線路層至該第五表面。
  18. 如申請專利範圍第17項所述的封裝結構，更包括：至少一第三晶片，設置於該第五表面上並電性連接該些第四導通孔。
  19. 如申請專利範圍第14項所述的封裝結構，更包括：至少一第二晶片，設置於該第四表面並電性連接該第三圖案化線路層。
  20. 如申請專利範圍第19項所述的封裝結構，更包括： 一第三可選擇性電鍍環氧樹脂，覆蓋該至少一第二晶片及該第四表面。
  21. 如申請專利範圍第20項所述的封裝結構，其中該第三可選擇性電鍍環氧樹脂包括一第五表面，其相對於該第三可選擇性電鍍環氧樹脂覆蓋該第四表面的表面，該封裝結構更包括：複數個第四導通孔，貫穿該第三可選擇性電鍍環氧樹脂以電性連接該第三圖案化線路層至該第五表面。
  22. 如申請專利範圍第21項所述的封裝結構，更包括：至少一第三晶片，設置於該第五表面上並電性連接該些第四導通孔。
  23. 如申請專利範圍第20項所述的封裝結構，更包括：至少一第三晶片，設置於該第一晶片的該主動表面上並電性連接該些第一焊墊，該第一可選擇性電鍍環氧樹脂覆蓋該第三晶片。
  24. 如申請專利範圍第14項所述的封裝結構，更包括：一第二晶片，包括複數個第二焊墊；一第三可選擇性電鍍環氧樹脂，覆蓋該第二晶片及該些第二焊墊並包括一第五表面，該第五表面連接該第一可選擇性電鍍環氧樹脂的該第三表面；以及複數個第四導通孔，直接設置於該第三可選擇性電鍍環氧樹脂，以連通該些第二焊墊至該第五表面並電性連接至該第一圖案化線路層。
  25. 如申請專利範圍第24項所述的封裝結構，更包括： 一第三晶片，設置於該第二晶片上並電性連接該些第二焊墊，該第三可選擇性電鍍環氧樹脂覆蓋該第三晶片。
  26. 如申請專利範圍第24項所述的封裝結構，更包括：一第三晶片，設置於該第一晶片的該主動表面上並電性連接該些第一焊墊，該第一可選擇性電鍍環氧樹脂覆蓋該第三晶片。
  27. 如申請專利範圍第1項所述的封裝結構，其中該第一可選擇性電鍍環氧樹脂包括相對的一第三表面以及一第四表面並覆蓋該第一晶片的該背面且暴露該些第一焊墊。
  28. 如申請專利範圍第27項所述的封裝結構，更包括：一介電層，設置於該第一可選擇性電鍍環氧樹脂的一第三表面上並覆蓋該些第一焊墊；以及一重配置線路層，配置於該介電層上並電性連接該些第一焊墊至該介電層的一外表面。
  29. 如申請專利範圍第28項所述的封裝結構，其中該介電層為一可選擇性電鍍環氧樹脂。
  30. 如申請專利範圍第28項所述的封裝結構，其中該第一圖案化線路層直接設置於該第一可選擇性電鍍環氧樹脂相對於該第三表面的一第四表面上，該些第一導通孔貫穿該第一可選擇性電鍍環氧樹脂以及該介電層，以連通該第一圖案化線路層與該重配置線路層，該封裝結構更包括：一第二晶片，設置於該第四表面並電性連接該第一圖案化線路層；以及 複數個焊球，配置於該外表面上並電性連接該重配置線路層。
  31. 如申請專利範圍第28項所述的封裝結構，其中該第一圖案化線路層直接設置於該第一可選擇性電鍍環氧樹脂相對於該第三表面的一第四表面上，該些第一導通孔貫穿該第一可選擇性電鍍環氧樹脂以及該介電層，以連通該第一圖案化線路層與該重配置線路層，該封裝結構更包括：一第二晶片，設置於該介電層的該外表面並電性連接該重配置線路層；以及複數個焊球，配置於該第四表面上並電性連接該第一圖案化線路層。
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