TWI546372B - 用於選擇性移除氮化矽之化學機械拋光（ｃｍｐ）組合物及方法 - Google Patents

用於選擇性移除氮化矽之化學機械拋光（ｃｍｐ）組合物及方法 Download PDF

Info

Publication number
TWI546372B
TWI546372B TW103142219A TW103142219A TWI546372B TW I546372 B TWI546372 B TW I546372B TW 103142219 A TW103142219 A TW 103142219A TW 103142219 A TW103142219 A TW 103142219A TW I546372 B TWI546372 B TW I546372B
Authority
TW
Taiwan
Prior art keywords
composition
cmp
cationic polymer
polishing
oxide
Prior art date
Application number
TW103142219A
Other languages
English (en)
Chinese (zh)
Other versions
TW201525121A (zh
Inventor
德米崔 狄內嘉
賽然 席哈
賈仁合
丹尼爾 馬堤傑
Original Assignee
卡博特微電子公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 卡博特微電子公司 filed Critical 卡博特微電子公司
Publication of TW201525121A publication Critical patent/TW201525121A/zh
Application granted granted Critical
Publication of TWI546372B publication Critical patent/TWI546372B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Composite Materials (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW103142219A 2013-12-09 2014-12-04 用於選擇性移除氮化矽之化學機械拋光（ｃｍｐ）組合物及方法 TWI546372B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US14/100,339 US9850402B2 (en) 2013-12-09 2013-12-09 CMP compositions and methods for selective removal of silicon nitride

Publications (2)

Publication Number Publication Date
TW201525121A TW201525121A (zh) 2015-07-01
TWI546372B true TWI546372B (zh) 2016-08-21

Family

ID=53270508

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103142219A TWI546372B (zh) 2013-12-09 2014-12-04 用於選擇性移除氮化矽之化學機械拋光（ｃｍｐ）組合物及方法

Country Status (6)

Country Link
US (1) US9850402B2 (https=)
JP (1) JP6530401B2 (https=)
KR (1) KR102307728B1 (https=)
CN (1) CN105814668B (https=)
TW (1) TWI546372B (https=)
WO (1) WO2015088871A1 (https=)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9303187B2 (en) * 2013-07-22 2016-04-05 Cabot Microelectronics Corporation Compositions and methods for CMP of silicon oxide, silicon nitride, and polysilicon materials
US9873180B2 (en) 2014-10-17 2018-01-23 Applied Materials, Inc. CMP pad construction with composite material properties using additive manufacturing processes
US10875153B2 (en) 2014-10-17 2020-12-29 Applied Materials, Inc. Advanced polishing pad materials and formulations
SG11201703114QA (en) 2014-10-17 2017-06-29 Applied Materials Inc Cmp pad construction with composite material properties using additive manufacturing processes
US9776361B2 (en) 2014-10-17 2017-10-03 Applied Materials, Inc. Polishing articles and integrated system and methods for manufacturing chemical mechanical polishing articles
US11745302B2 (en) 2014-10-17 2023-09-05 Applied Materials, Inc. Methods and precursor formulations for forming advanced polishing pads by use of an additive manufacturing process
US9597768B1 (en) 2015-09-09 2017-03-21 Cabot Microelectronics Corporation Selective nitride slurries with improved stability and improved polishing characteristics
KR20230169424A (ko) 2015-10-30 2023-12-15 어플라이드 머티어리얼스, 인코포레이티드 원하는 제타 전위를 가진 연마 제품을 형성하는 장치 및 방법
US10593574B2 (en) 2015-11-06 2020-03-17 Applied Materials, Inc. Techniques for combining CMP process tracking data with 3D printed CMP consumables
US10391605B2 (en) 2016-01-19 2019-08-27 Applied Materials, Inc. Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process
KR101827366B1 (ko) * 2016-05-16 2018-02-09 주식회사 케이씨텍 고단차 연마용 슬러리 조성물
SG11201900141UA (en) * 2016-08-26 2019-03-28 Ferro Corp Slurry composition and method of selective silica polishing
US11471999B2 (en) 2017-07-26 2022-10-18 Applied Materials, Inc. Integrated abrasive polishing pads and manufacturing methods
WO2019032286A1 (en) 2017-08-07 2019-02-14 Applied Materials, Inc. ABRASIVE DISTRIBUTION POLISHING PADS AND METHODS OF MAKING SAME
JP6962247B2 (ja) * 2018-03-14 2021-11-05 Jsr株式会社 半導体表面処理用組成物および半導体表面処理方法
US10584266B2 (en) 2018-03-14 2020-03-10 Cabot Microelectronics Corporation CMP compositions containing polymer complexes and agents for STI applications
KR20210042171A (ko) 2018-09-04 2021-04-16 어플라이드 머티어리얼스, 인코포레이티드 진보한 폴리싱 패드들을 위한 제형들
US12227673B2 (en) * 2018-12-04 2025-02-18 Cmc Materials Llc Composition and method for silicon nitride CMP
US11851570B2 (en) 2019-04-12 2023-12-26 Applied Materials, Inc. Anionic polishing pads formed by printing processes
US12281251B2 (en) 2019-09-30 2025-04-22 Versum Materials Us, Llc Etching composition and method for selectively removing silicon nitride during manufacture of a semiconductor device
TWI864116B (zh) * 2019-09-30 2024-12-01 美商慧盛材料美國有限責任公司 用於製造半導體裝置期間之選擇性移除氮化矽之蝕刻組合物及方法
WO2021081145A1 (en) 2019-10-22 2021-04-29 Cmc Materials, Inc. Polishing composition and method with high selectivity for silicon nitride and polysilicon over silicon oxide
US11878389B2 (en) 2021-02-10 2024-01-23 Applied Materials, Inc. Structures formed using an additive manufacturing process for regenerating surface texture in situ
JP7778621B2 (ja) 2021-03-31 2025-12-02 株式会社フジミインコーポレーテッド 第四級アンモニウム系表面修飾シリカ、その組成物、作製方法、および使用方法
KR20220153788A (ko) * 2021-05-12 2022-11-21 성균관대학교산학협력단 무기 입자를 포함하는 수분산액
US20230242790A1 (en) * 2022-02-03 2023-08-03 Cmc Materials, Inc. Ceria-based slurry compositions for selective and nonselective cmp of silicon oxide, silicon nitride, and polysilicon

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR970042941A (ko) * 1995-12-29 1997-07-26 베일리 웨인 피 기계적 화학적 폴리싱 공정을 위한 폴리싱 합성물
US7044836B2 (en) * 2003-04-21 2006-05-16 Cabot Microelectronics Corporation Coated metal oxide particles for CMP
US7504044B2 (en) 2004-11-05 2009-03-17 Cabot Microelectronics Corporation Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
US7531105B2 (en) 2004-11-05 2009-05-12 Cabot Microelectronics Corporation Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
WO2007130350A1 (en) * 2006-05-02 2007-11-15 Cabot Microelectronics Corporation Compositions and methods for cmp of semiconductor materials
US20080105652A1 (en) * 2006-11-02 2008-05-08 Cabot Microelectronics Corporation CMP of copper/ruthenium/tantalum substrates
US20090047870A1 (en) 2007-08-16 2009-02-19 Dupont Air Products Nanomaterials Llc Reverse Shallow Trench Isolation Process
US8778803B2 (en) * 2007-09-21 2014-07-15 Hitachi Chemical Company, Ltd. CPM slurry for silicon film polishing and polishing method
MY150487A (en) * 2008-09-19 2014-01-30 Cabot Microelectronics Corp Barrier slurry for low-k dielectrics.
TW201038690A (en) * 2008-09-26 2010-11-01 Rhodia Operations Abrasive compositions for chemical mechanical polishing and methods for using same
US8480920B2 (en) * 2009-04-02 2013-07-09 Jsr Corporation Chemical mechanical polishing aqueous dispersion, method of preparing the same, chemical mechanical polishing aqueous dispersion preparation kit, and chemical mechanical polishing method
US8808573B2 (en) * 2011-04-15 2014-08-19 Cabot Microelectronics Corporation Compositions and methods for selective polishing of silicon nitride materials
US20150099361A1 (en) * 2012-05-07 2015-04-09 Basf Se Process for the manufacture of semiconductor devices comprising the chemical mechanical polishing (cmp) of iii-v material in the presence of a cmp composition comprising a compound containing an n-heterocycle
US9633863B2 (en) * 2012-07-11 2017-04-25 Cabot Microelectronics Corporation Compositions and methods for selective polishing of silicon nitride materials
US8906252B1 (en) * 2013-05-21 2014-12-09 Cabot Microelelctronics Corporation CMP compositions selective for oxide and nitride with high removal rate and low defectivity
US9303187B2 (en) * 2013-07-22 2016-04-05 Cabot Microelectronics Corporation Compositions and methods for CMP of silicon oxide, silicon nitride, and polysilicon materials

Also Published As

Publication number Publication date
KR20160095123A (ko) 2016-08-10
WO2015088871A1 (en) 2015-06-18
JP6530401B2 (ja) 2019-06-12
CN105814668B (zh) 2018-10-26
CN105814668A (zh) 2016-07-27
JP2017505532A (ja) 2017-02-16
US20150159046A1 (en) 2015-06-11
TW201525121A (zh) 2015-07-01
KR102307728B1 (ko) 2021-10-05
US9850402B2 (en) 2017-12-26

Similar Documents

Publication Publication Date Title
TWI546372B (zh) 用於選擇性移除氮化矽之化學機械拋光（ｃｍｐ）組合物及方法
KR102253294B1 (ko) 산화규소, 질화규소 및 폴리실리콘 물질의 cmp를 위한 조성물 및 방법
CN104284960B (zh) 具有高移除速率和低缺陷率的对氧化物和氮化物有选择性的cmp组合物
JP6272842B2 (ja) モリブデン研磨のための組成物および方法
KR101173753B1 (ko) 구리-부동태화 ｃｍｐ 조성물 및 방법
TWI572687B (zh) 鍺化學機械拋光
TWI580767B (zh) 鈷拋光加速劑
JP2008519466A (ja) 窒化ケイ素の除去速度が酸化ケイ素と比べて高い研磨組成物及び方法
CN108495906B (zh) 含阳离子型聚合物添加剂的抛光组合物
JP2017510977A (ja) 窒化チタン及びチタン／窒化チタン除去の抑制に関するｃｍｐ方法
CN114026189A (zh) 氧化硅膜用研磨液组合物
KR20220110799A (ko) 높은 산화막 제거율의 얕은 트렌치 격리(sti) 화학적 기계적 평탄화(cmp) 연마
CN114787304A (zh) 低氧化物沟槽凹陷的浅沟槽隔离化学机械平面化抛光