TWI545208B - A Cu-Ga alloy sputtering target, a casting product for the sputtering target, and the like - Google Patents

A Cu-Ga alloy sputtering target, a casting product for the sputtering target, and the like Download PDF

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Publication number
TWI545208B
TWI545208B TW103102622A TW103102622A TWI545208B TW I545208 B TWI545208 B TW I545208B TW 103102622 A TW103102622 A TW 103102622A TW 103102622 A TW103102622 A TW 103102622A TW I545208 B TWI545208 B TW I545208B
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TW
Taiwan
Prior art keywords
alloy
casting
cylindrical
pores
less
Prior art date
Application number
TW103102622A
Other languages
English (en)
Chinese (zh)
Other versions
TW201443250A (zh
Inventor
Tomoya Tamura
Original Assignee
Jx Nippon Mining & Metals Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jx Nippon Mining & Metals Corp filed Critical Jx Nippon Mining & Metals Corp
Publication of TW201443250A publication Critical patent/TW201443250A/zh
Application granted granted Critical
Publication of TWI545208B publication Critical patent/TWI545208B/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
    • B22D18/00—Pressure casting; Vacuum casting
    • B22D18/06—Vacuum casting, i.e. making use of vacuum to fill the mould
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
    • B22D21/00—Casting non-ferrous metals or metallic compounds so far as their metallurgical properties are of importance for the casting procedure; Selection of compositions therefor
    • B22D21/02—Casting exceedingly oxidisable non-ferrous metals, e.g. in inert atmosphere
    • B22D21/025—Casting heavy metals with high melting point, i.e. 1000 - 1600 degrees C, e.g. Co 1490 degrees C, Ni 1450 degrees C, Mn 1240 degrees C, Cu 1083 degrees C

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
TW103102622A 2013-03-21 2014-01-24 A Cu-Ga alloy sputtering target, a casting product for the sputtering target, and the like TWI545208B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013057482A JP5882248B2 (ja) 2013-03-21 2013-03-21 Ｃｕ−Ｇａ合金スパッタリングターゲット、同スパッタリングターゲット用鋳造品及びこれらの製造方法

Publications (2)

Publication Number Publication Date
TW201443250A TW201443250A (zh) 2014-11-16
TWI545208B true TWI545208B (zh) 2016-08-11

Family

ID=51700402

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103102622A TWI545208B (zh) 2013-03-21 2014-01-24 A Cu-Ga alloy sputtering target, a casting product for the sputtering target, and the like

Country Status (3)

Country Link
JP (1) JP5882248B2 (ko)
KR (1) KR20140115953A (ko)
TW (1) TWI545208B (ko)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6665428B2 (ja) * 2014-07-08 2020-03-13 三菱マテリアル株式会社 Ｃｕ−Ｇａ合金スパッタリングターゲット及びその製造方法
JP2016079450A (ja) * 2014-10-15 2016-05-16 Ｊｘ金属株式会社 Ｃｕ−Ｇａ合金スパッタリングターゲット
CN115516127A (zh) * 2020-04-23 2022-12-23 东曹株式会社 钇铸锭以及使用其的溅射靶材

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000073163A (ja) * 1998-08-28 2000-03-07 Vacuum Metallurgical Co Ltd Ｃｕ−Ｇａ合金スパッタリングターゲット及びその製造方法
JP5192990B2 (ja) * 2008-11-11 2013-05-08 光洋應用材料科技股▲分▼有限公司 銅−ガリウム合金スパッタリングターゲット及びそのスパッタリングターゲットの製造方法並びに関連用途
JP2012017481A (ja) * 2010-07-06 2012-01-26 Mitsui Mining & Smelting Co Ltd Ｃｕ−Ｇａ合金およびＣｕ−Ｇａ合金スパッタリングターゲット
JP4948634B2 (ja) * 2010-09-01 2012-06-06 Ｊｘ日鉱日石金属株式会社 インジウムターゲット及びその製造方法
JP2012144787A (ja) * 2011-01-13 2012-08-02 Hitachi Cable Ltd スパッタリングターゲット用銅合金及びそれを用いたスパッタリングターゲット並びにその製造方法
JP2012193423A (ja) * 2011-03-17 2012-10-11 Hitachi Cable Ltd Ｃｕ−Ｇａ合金材およびその製造方法
JP5787647B2 (ja) * 2011-07-08 2015-09-30 古河電気工業株式会社 スパッタリングターゲット用銅材料の製造方法
EP2684978A4 (en) * 2011-08-29 2015-01-14 Jx Nippon Mining & Metals Corp CU-GA ALLOY SPUTTER TARGET AND MANUFACTURING METHOD THEREFOR
JP2013076129A (ja) * 2011-09-30 2013-04-25 Hitachi Cable Ltd スパッタリングターゲット及びその製造方法

Also Published As

Publication number Publication date
KR20140115953A (ko) 2014-10-01
JP2014181390A (ja) 2014-09-29
TW201443250A (zh) 2014-11-16
JP5882248B2 (ja) 2016-03-09

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