TWI542412B - 噴嘴頭及用於處理基板之表面的裝置 - Google Patents

噴嘴頭及用於處理基板之表面的裝置 Download PDF

Info

Publication number
TWI542412B
TWI542412B TW100131025A TW100131025A TWI542412B TW I542412 B TWI542412 B TW I542412B TW 100131025 A TW100131025 A TW 100131025A TW 100131025 A TW100131025 A TW 100131025A TW I542412 B TWI542412 B TW I542412B
Authority
TW
Taiwan
Prior art keywords
precursor
supply
discharge
flushing gas
nozzle head
Prior art date
Application number
TW100131025A
Other languages
English (en)
Chinese (zh)
Other versions
TW201217061A (en
Inventor
派克 索尼寧
羅賓 安宏
Original Assignee
班尼克公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 班尼克公司 filed Critical 班尼克公司
Publication of TW201217061A publication Critical patent/TW201217061A/zh
Application granted granted Critical
Publication of TWI542412B publication Critical patent/TWI542412B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
    • C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Coating Apparatus (AREA)
TW100131025A 2010-08-30 2011-08-30 噴嘴頭及用於處理基板之表面的裝置 TWI542412B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FI20105909A FI20105909A0 (fi) 2010-08-30 2010-08-30 Suutinpää

Publications (2)

Publication Number Publication Date
TW201217061A TW201217061A (en) 2012-05-01
TWI542412B true TWI542412B (zh) 2016-07-21

Family

ID=42669413

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100131025A TWI542412B (zh) 2010-08-30 2011-08-30 噴嘴頭及用於處理基板之表面的裝置

Country Status (6)

Country Link
CN (1) CN103080372B (ru)
DE (1) DE112011102859T5 (ru)
EA (1) EA022825B1 (ru)
FI (1) FI20105909A0 (ru)
TW (1) TWI542412B (ru)
WO (1) WO2012028782A1 (ru)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5432396B1 (ja) * 2013-02-28 2014-03-05 三井造船株式会社 成膜装置及びインジェクタ
FI126315B (en) * 2014-07-07 2016-09-30 Beneq Oy A nozzle head, apparatus and method for subjecting a substrate surface to successive surface reactions
FI129730B (en) 2017-10-18 2022-08-15 Beneq Oy Nozzle and nozzle head

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7537662B2 (en) * 2003-04-29 2009-05-26 Asm International N.V. Method and apparatus for depositing thin films on a surface
US7789961B2 (en) * 2007-01-08 2010-09-07 Eastman Kodak Company Delivery device comprising gas diffuser for thin film deposition
US8207063B2 (en) * 2007-01-26 2012-06-26 Eastman Kodak Company Process for atomic layer deposition
US8043432B2 (en) * 2007-02-12 2011-10-25 Tokyo Electron Limited Atomic layer deposition systems and methods
US8287647B2 (en) * 2007-04-17 2012-10-16 Lam Research Corporation Apparatus and method for atomic layer deposition
US8182608B2 (en) * 2007-09-26 2012-05-22 Eastman Kodak Company Deposition system for thin film formation
US8758512B2 (en) * 2009-06-08 2014-06-24 Veeco Ald Inc. Vapor deposition reactor and method for forming thin film
US20110076421A1 (en) * 2009-09-30 2011-03-31 Synos Technology, Inc. Vapor deposition reactor for forming thin film on curved surface

Also Published As

Publication number Publication date
WO2012028782A1 (en) 2012-03-08
EA022825B1 (ru) 2016-03-31
CN103080372B (zh) 2015-05-27
TW201217061A (en) 2012-05-01
EA201390271A1 (ru) 2013-08-30
FI20105909A0 (fi) 2010-08-30
CN103080372A (zh) 2013-05-01
DE112011102859T5 (de) 2013-08-08

Similar Documents

Publication Publication Date Title
TWI601575B (zh) 噴嘴頭與裝置及其操作方法
KR102613349B1 (ko) 배기 장치 및 이를 이용한 기판 가공 장치와 박막 제조 방법
JP6784774B2 (ja) ガスの均一な流れを提供する装置および方法
EP2814996B1 (en) Nozzle and nozzle head
JP5927679B2 (ja) Ａｌｄコーティングシステム
US9252024B2 (en) Deposition chambers with UV treatment and methods of use
US7918938B2 (en) High temperature ALD inlet manifold
US20080026162A1 (en) Radical-enhanced atomic layer deposition system and method
TWI542412B (zh) 噴嘴頭及用於處理基板之表面的裝置
JP2009509042A (ja) 大気圧下で連続化学気相堆積する装置、方法、及びその使用
US10513776B2 (en) Method for coating a substrate
WO2019019569A1 (zh) 用于镀膜的喷头、设备和相应方法
US20040007179A1 (en) Reaction apparatus for atomic layer deposition
JP2010141248A (ja) 成膜装置及び成膜方法
US11371146B2 (en) Gas distribution unit in connection with ALD reactor
CN103080375B (zh) 喷嘴头
JP2938070B1 (ja) 常圧ｃｖｄ装置
KR100926187B1 (ko) 반도체증착장비용 샤워헤드방식 가스공급장치 및가스공급방법
KR20240077733A (ko) 기판 처리 장치
KR101010513B1 (ko) 반도체 제조용 인젝터
CN118360592A (zh) 一种连续原子层沉积包覆粉末的装置及方法
KR20040079125A (ko) 화학기상 증착장비
KR20020037556A (ko) 반도체 제조 설비의 배기 라인