EA201390271A1 - Распылительная головка - Google Patents

Распылительная головка

Info

Publication number
EA201390271A1
EA201390271A1 EA201390271A EA201390271A EA201390271A1 EA 201390271 A1 EA201390271 A1 EA 201390271A1 EA 201390271 A EA201390271 A EA 201390271A EA 201390271 A EA201390271 A EA 201390271A EA 201390271 A1 EA201390271 A1 EA 201390271A1
Authority
EA
Eurasian Patent Office
Prior art keywords
spray head
precursor
purge gas
channel
precursors
Prior art date
Application number
EA201390271A
Other languages
English (en)
Other versions
EA022825B1 (ru
Inventor
Пекка Соининен
Робин Энхолм
Original Assignee
Бенек Ой
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Бенек Ой filed Critical Бенек Ой
Publication of EA201390271A1 publication Critical patent/EA201390271A1/ru
Publication of EA022825B1 publication Critical patent/EA022825B1/ru

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
    • C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Coating Apparatus (AREA)

Abstract

Настоящее изобретение относится к распылительной головке (2) для подвергания поверхности (4) подложки (6) последовательным поверхностным реакциям, по меньшей мере, первого прекурсора (А) и второго прекурсора (В). Распылительная головка (2) содержит два или более вытянутых сопла (8, 10) прекурсора для подачи на поверхность (4) подложки (6) первого и второго прекурсоров (А, В). В соответствии с настоящим изобретением распылительная головка (2) содержит на выходной стороне (5) сопла (8, 10) подачи прекурсора, каналы (12) продувочного газа и выпускные каналы (42, 46) в следующей, факультативно повторяющейся множество раз последовательности: по меньшей мере, первое сопло (8) подачи прекурсора, первый выпускной канал (42), канал (12) продувочного газа, второе сопло (10) подачи прекурсора, второй выпускной канал (46) и канал (12) продувочного газа.
EA201390271A 2010-08-30 2011-08-29 Распылительная головка EA022825B1 (ru)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FI20105909A FI20105909A0 (fi) 2010-08-30 2010-08-30 Suutinpää
PCT/FI2011/050750 WO2012028782A1 (en) 2010-08-30 2011-08-29 Nozzle head

Publications (2)

Publication Number Publication Date
EA201390271A1 true EA201390271A1 (ru) 2013-08-30
EA022825B1 EA022825B1 (ru) 2016-03-31

Family

ID=42669413

Family Applications (1)

Application Number Title Priority Date Filing Date
EA201390271A EA022825B1 (ru) 2010-08-30 2011-08-29 Распылительная головка

Country Status (6)

Country Link
CN (1) CN103080372B (ru)
DE (1) DE112011102859T5 (ru)
EA (1) EA022825B1 (ru)
FI (1) FI20105909A0 (ru)
TW (1) TWI542412B (ru)
WO (1) WO2012028782A1 (ru)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5432396B1 (ja) * 2013-02-28 2014-03-05 三井造船株式会社 成膜装置及びインジェクタ
FI126315B (en) * 2014-07-07 2016-09-30 Beneq Oy A nozzle head, apparatus and method for subjecting a substrate surface to successive surface reactions
FI129730B (en) 2017-10-18 2022-08-15 Beneq Oy Nozzle and nozzle head

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7537662B2 (en) * 2003-04-29 2009-05-26 Asm International N.V. Method and apparatus for depositing thin films on a surface
US7789961B2 (en) * 2007-01-08 2010-09-07 Eastman Kodak Company Delivery device comprising gas diffuser for thin film deposition
US8207063B2 (en) * 2007-01-26 2012-06-26 Eastman Kodak Company Process for atomic layer deposition
US8043432B2 (en) * 2007-02-12 2011-10-25 Tokyo Electron Limited Atomic layer deposition systems and methods
US8287647B2 (en) * 2007-04-17 2012-10-16 Lam Research Corporation Apparatus and method for atomic layer deposition
US8182608B2 (en) * 2007-09-26 2012-05-22 Eastman Kodak Company Deposition system for thin film formation
US8758512B2 (en) * 2009-06-08 2014-06-24 Veeco Ald Inc. Vapor deposition reactor and method for forming thin film
US20110076421A1 (en) * 2009-09-30 2011-03-31 Synos Technology, Inc. Vapor deposition reactor for forming thin film on curved surface

Also Published As

Publication number Publication date
CN103080372B (zh) 2015-05-27
EA022825B1 (ru) 2016-03-31
WO2012028782A1 (en) 2012-03-08
FI20105909A0 (fi) 2010-08-30
TWI542412B (zh) 2016-07-21
CN103080372A (zh) 2013-05-01
TW201217061A (en) 2012-05-01
DE112011102859T5 (de) 2013-08-08

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Legal Events

Date Code Title Description
MM4A Lapse of a eurasian patent due to non-payment of renewal fees within the time limit in the following designated state(s)

Designated state(s): AM AZ BY KZ KG MD TJ TM