WO2013064737A3 - Apparatus and method for processing substrate - Google Patents

Apparatus and method for processing substrate Download PDF

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Publication number
WO2013064737A3
WO2013064737A3 PCT/FI2012/051050 FI2012051050W WO2013064737A3 WO 2013064737 A3 WO2013064737 A3 WO 2013064737A3 FI 2012051050 W FI2012051050 W FI 2012051050W WO 2013064737 A3 WO2013064737 A3 WO 2013064737A3
Authority
WO
WIPO (PCT)
Prior art keywords
precursor
reaction space
supplying
supply line
processing substrate
Prior art date
Application number
PCT/FI2012/051050
Other languages
French (fr)
Other versions
WO2013064737A2 (en
Inventor
Jarmo Maula
Original Assignee
Beneq Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beneq Oy filed Critical Beneq Oy
Publication of WO2013064737A2 publication Critical patent/WO2013064737A2/en
Publication of WO2013064737A3 publication Critical patent/WO2013064737A3/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus

Abstract

The present invention relates to an apparatus and a method for subjecting a surface of a substrate (5) to successive surface reactions of at least a first precursor (A) and a second precursor (B). The apparatus comprises a reaction space (7) and a precursor system (6) for supplying the at least first and second precursors (A, B) to the reaction space (7).The precursor system (6) comprises a precursor vessel (10, 12), a precursor supply line (16, 18, 30) for supplying the precursor (A, B) from precursor vessel (10, 12) to the reaction space (2) and a dosing valve (22, 24, 32) provided to the precursor supply line (16, 18, 30). The apparatus further comprises a temperature sensor (8, 9, 11, 13, 15, 17, 19) arranged to the precursor system (6) in free gas space (16, 18, 30, 38) upstream of the dosing valve (22, 24, 32).
PCT/FI2012/051050 2011-11-01 2012-10-31 Apparatus and method for processing substrate WO2013064737A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FI20116071 2011-11-01
FI20116071 2011-11-01

Publications (2)

Publication Number Publication Date
WO2013064737A2 WO2013064737A2 (en) 2013-05-10
WO2013064737A3 true WO2013064737A3 (en) 2013-08-01

Family

ID=48192938

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/FI2012/051050 WO2013064737A2 (en) 2011-11-01 2012-10-31 Apparatus and method for processing substrate

Country Status (2)

Country Link
TW (1) TW201339354A (en)
WO (1) WO2013064737A2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102204536B1 (en) * 2018-12-31 2021-01-20 한국표준과학연구원 Capsule Type Viscometer, Liquid Phase Precursor Degasser and Liquid Phase Precursor Management System Including Thereof
FI129579B (en) * 2019-06-28 2022-05-13 Beneq Oy Precursor source arrangement and atomic layer deposition apparatus
FI129578B (en) 2019-06-28 2022-05-13 Beneq Oy An atomic layer deposition apparatus
FI130416B (en) * 2019-06-28 2023-08-21 Beneq Oy Precursor source arrangement and atomic layer deposition apparatus

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040226507A1 (en) * 2003-04-24 2004-11-18 Carpenter Craig M. Methods for controlling mass flow rates and pressures in passageways coupled to reaction chambers and systems for depositing material onto microfeature workpieces in reaction chambers
US20050000427A1 (en) * 2003-07-02 2005-01-06 Samsung Electronics Co., Ltd. Gas supplying apparatus for atomic layer deposition
US20080099933A1 (en) * 2006-10-31 2008-05-01 Choi Kenric T Ampoule for liquid draw and vapor draw with a continous level sensor
US20080178809A1 (en) * 2007-01-29 2008-07-31 Spohn Ronald F Diptube apparatus and method for delivering vapor phase reagent to a deposition chamber
KR20110078959A (en) * 2009-12-31 2011-07-07 에스엔유 프리시젼 주식회사 Vaporizing apparatus and control method for the same
US20120034369A1 (en) * 2010-08-05 2012-02-09 Tokyo Electron Limited Vaporizing apparatus, substrate processing apparatus, coating and developing apparatus, and substrate processing method

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040226507A1 (en) * 2003-04-24 2004-11-18 Carpenter Craig M. Methods for controlling mass flow rates and pressures in passageways coupled to reaction chambers and systems for depositing material onto microfeature workpieces in reaction chambers
US20050000427A1 (en) * 2003-07-02 2005-01-06 Samsung Electronics Co., Ltd. Gas supplying apparatus for atomic layer deposition
US20080099933A1 (en) * 2006-10-31 2008-05-01 Choi Kenric T Ampoule for liquid draw and vapor draw with a continous level sensor
US20080178809A1 (en) * 2007-01-29 2008-07-31 Spohn Ronald F Diptube apparatus and method for delivering vapor phase reagent to a deposition chamber
KR20110078959A (en) * 2009-12-31 2011-07-07 에스엔유 프리시젼 주식회사 Vaporizing apparatus and control method for the same
US20120034369A1 (en) * 2010-08-05 2012-02-09 Tokyo Electron Limited Vaporizing apparatus, substrate processing apparatus, coating and developing apparatus, and substrate processing method

Also Published As

Publication number Publication date
WO2013064737A2 (en) 2013-05-10
TW201339354A (en) 2013-10-01

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