TW201339354A - Apparatus and method for processing substrate - Google Patents

Abstract

The present invention relates to an apparatus and a method for subjecting a surface of a substrate (5) to successive surface reactions of at least a first precursor (A) and a second precursor (B). The apparatus comprises a reaction space (7) and a precursor system (6) for supplying the at least first and second precursors (A, B) to the reaction space (7). The precursor system (6) comprises a precursor vessel (10, 12), a precursor supply line (16, 18, 30) for supplying the precursor (A, B) from precursor vessel (10, 12) to the reaction space (7) and a dosing valve (22, 24, 32) provided to the precursor supply line (16, 18, 30). The apparatus further comprises a temperature sensor (8, 9, 11, 13, 15, 17, 19) arranged to the precursor system (6) in free gas space (16, 18, 30, 38) upstream of the dosing valve (22, 24, 32).

Description

Substrate processing apparatus and method

The present invention relates to a device for processing a substrate, and in particular to a device as defined in the preamble of item 1 of the independent patent application. The present invention is also directed to a method of processing a substrate, more specifically a method as defined in the preamble of item 8 of the independent patent application.

The present invention is directed to a process wherein the substrate is treated by reacting a substrate surface through a coherent surface of two or more vapor phases or gas phase precursors. A precursor treatment generally refers to coating a substrate surface with a coating or doping a surface layer with a dopant. A generally well-known method of atomic layer deposition (ALD) is one in which a substrate surface can be subjected to a coherent surface reaction of two or more vapor phases or gas phase precursors to treat a substrate surface. During processing, two or more precursors are continuously supplied to the substrate surface by the precursor system.

The precursor dose supplied during a certain processing cycle for this treatment is generally small. The coating or doping process can function properly if the precursor is supplied in the design order and a minimum amount of precursor is supplied. Therefore, it is important to track or detect precursor supply to monitor and control the substrate processing system. The prior art methods and systems for detecting precursor supply are based on pressure measurements. Conventional art detection systems have been used in the prior art to track the flow path before and after one of the reaction chambers in which the substrate is processed. The pressure changes in the middle.

A problem with prior art detection systems that utilize pressure measuring devices, ie fluid pressure gauges, is that they do not provide accurate information and information from precursor containers. Furthermore, the fluid pressure gauge must be at the same temperature as the precursor to avoid condensation of the fluid pressure gauge. This will make the structure of the fluid pressure gauge very complicated or even impossible due to the high processing and precursor temperatures used in atomic layer deposition. In addition, the high reactivity precursor can degrade the operation of the fluid pressure gauge or even hinder its actuation. Fluid pressure gauges also provide very small signals that make detection or tracking difficult.

It is an object of the present invention to provide an apparatus and method that overcomes or at least alleviates the disadvantages of the prior art. The object of the invention can be achieved by means of a device according to the first feature of the patent application. The object of the invention can be further achieved by a method according to the characterizing portion of claim 8 of the patent application.

Patent Application Scope Attached to a preferred embodiment of the invention is disclosed.

The invention is based on the idea of monitoring the supply of vapor phase material by means of a temperature measurement performed by a temperature sensor inside a device, wherein the device passes through at least a first precursor of the surface of a substrate. And coherent surface reaction of a second precursor to process the substrate, the apparatus comprising a precursor system for supplying the at least first and second precursors. According to the invention, the temperature sensor can be configured to detect the supply of at least one of the vapor phase precursors.

If the precursor is contained in a precursor container, the free gas space of the precursor container will have a certain precursor vapor pressure when the precursor container is closed. force. Based on the precursor vapor pressure described above, all surfaces in the free gas space will be exposed to the vapor phase precursor. Therefore, the precursor will adhere or contact the surface of the free gas space of the precursor container. When the precursor container or a conduit connected thereto is opened, the vapor pressure in the free gas space inside the precursor container will drop as the gaseous precursor flows out of the precursor container. The descending vapor pressure will cause the precursor to detach or vaporize from the surface of the free gas space of the precursor container. The detachment or vaporization of the precursor from a surface causes the temperature on the surface to decrease as the vaporization removes thermal energy from the surface. In some embodiments, a liquid or solid precursor material will absorb energy from the environment as it evaporates and undergoes a phase change. This absorbed energy will provide a temperature change by lowering the ambient temperature. In a method of treating a substrate by subjecting a surface of a substrate to a continuous surface reaction of at least a first precursor and a second precursor, at least one precursor during one of the formulation states when the dispensing valve is opened Will evaporate. Therefore, a temperature sensor can detect a temperature change during a precursor evaporation or during a dispensing period. When a molecule of a precursor material is detached from a surface, a corresponding temperature drop occurs.

Accordingly, the present invention provides an apparatus comprising a reaction space in which a substrate is processed, and a precursor system for supplying the at least first and second precursors to the reaction space. The precursor system includes a precursor container for a precursor, a precursor supply conduit, the precursor is supplied from the precursor container to the reaction space, and a dispensing valve is disposed in the precursor container Between the reaction spaces, a dose of the precursor is supplied to the reaction space by opening and closing the dispensing valve. According to the invention, the apparatus further includes a temperature sensor disposed to the precursor system in a free gas space upstream of the dispensing valve for detecting one or more gaseous precursors toward the reaction space supply. The present invention also provides a substrate calendar a method of treating the substrate in a reaction space via a coherent surface reaction of at least a first gaseous precursor and a second gaseous precursor, the method comprising: providing a precursor container and the reaction space by opening and closing A dispensing valve is provided to supply a dose of precursor from the precursor container to the reaction space via a precursor supply conduit. According to the invention, the method further comprises detecting a supply of a precursor by a temperature measurement achieved by a temperature sensor in a free gas space upstream of the dispensing valve.

The present invention has the advantage that it provides a simple and accurate way to monitor the formulation of precursors and other vapor phase materials when a substrate is processed in a device by a coherent surface reaction of a plurality of precursors. . The present invention also provides a reliable measurement solution that is insensitive to reaction precursors.

2‧‧‧Reaction chamber (reaction space)

4‧‧ ‧ room

5‧‧‧Substrate

6‧‧‧ precursor system

7‧‧‧Reaction space

9‧‧‧Temperature Sensor

10‧‧‧Precursor container

11‧‧‧Temperature Sensor

12‧‧‧Precursor container

14‧‧‧Washing gas container

15‧‧‧Temperature Sensor

16‧‧‧Precursor conduit (precursor supply line) (free gas space)

17‧‧‧Temperature Sensor

18‧‧‧Secondary conduit (precursor supply line) (free gas space)

19‧‧‧ Temperature Sensor

20‧‧‧ flushing gas conduit

22‧‧‧ dispense valve

24‧‧‧ dispense valve

26‧‧‧ dispense valve

28‧‧‧ branch point

30‧‧‧Precursor supply pipeline (free gas space)

32‧‧‧ dispense valve (supply valve)

34‧‧‧Extraction catheter

36‧‧‧Exhaust valve

38‧‧‧ free gas space

40‧‧‧ signal line

42‧‧‧Computer System (Control System)

A‧‧‧First precursor

B‧‧‧Second precursor

C‧‧‧ flushing gas

BRIEF DESCRIPTION OF THE DRAWINGS The present invention will be described in more detail with reference to the accompanying drawings, in which FIG. 1 is a schematic view of an atomic layer deposition apparatus according to an embodiment of the present invention; FIG. 2 shows the present invention. A schematic view of a precursor system container of an atomic layer deposition apparatus according to an embodiment; and FIG. 3 is a schematic view showing another precursor system of an atomic layer deposition apparatus according to an embodiment of the present invention. .

Figure 1 shows a specific embodiment of an explanation for an atomic layer deposition (ALD) device. Atomic layer deposition is a technique well known in the art for coating and depositing substrates by coherent surface reactions of at least two precursors. Such precursors It is supplied to a reaction chamber in a gaseous state. After performing a surface reaction of a certain precursor, the reaction chamber will be evacuated and then a flushing gas is supplied to the reaction chamber. After the flushing gas pulse, the reaction chamber will be evacuated again and then another precursor material is supplied to the reaction chamber. In some applications, the discharge and/or supply of flushing gas may be slightly eliminated. Typically, the ALD system is combined with a two-separated precursor material, which can also be combined with more than two separate precursor materials. Once all of the precursors are supplied to the reaction chamber, a complete ALD cycle is completed. The precursor materials may be in a gaseous, liquid or solid state in the precursor container and vaporized during supply of the precursors to the reaction chamber.

The ALD apparatus of Fig. 1 includes a chamber 4 and a reaction chamber 2 inside the chamber 4. A reaction space 7 is defined inside the reaction chamber 2. It should be noted that in other embodiments, the chamber 4 may be omitted and the reaction chamber 2 may also function as a chamber. The pressure in chamber 4 can have any desired value. Although ALD processing typically uses a vacuum during deposition, the use of vacuum is not necessary for ALD. However, vacuum often provides the most efficient deposition environment, and thus the chamber 4 can be a vacuum chamber. In yet another variation, the ALD device can include a nozzle tip (not shown) for supplying a precursor on a substrate surface without any separate reaction chambers. In this case, a reaction chamber may be formed between the surface or the substrate and the nozzle tip. As shown in Fig. 1, a substrate 5 is placed in the reaction space 7 inside the reaction chamber 2. In the present embodiment, only one substrate 5 is processed at a time, but in a variant embodiment, a plurality of substrates can be processed in the reaction chamber 2 at the same time. The substrate 5 can be placed on a substrate holder (not shown) for loading into the reaction chamber 2, processing inside the reaction chamber 2, and unloading from the reaction chamber 2. The ALD apparatus also includes a precursor system 6 for supplying precursors to the reaction chamber 2 and for discharging precursors from the reaction chamber 2. The precursor system 6 includes a plurality of precursor containers 10, 12, for precursors A, B, a plurality of precursor supply conduits 16, 18, respectively supplying precursors A, B from the precursor containers 10, 12 to the reaction space 7, and a plurality of dispensing valves 22, 24, Between the precursor containers 10, 12 and the reaction space 7, a dose of precursors A, B is supplied to the reaction space 7 by opening and closing of the dispensing valves 22, 24, respectively.

The specific embodiment of Fig. 1 includes a first precursor container 10 having a first precursor A, a second precursor container 12 having a second precursor B, and a flushing gas container 14 having a rinse Gas C. The precursors A, B and the flushing gas system are supplied to the reaction chamber 2 via a supply conduit 30. The supply conduit 30 is provided with a supply valve 32 for opening and closing the supply conduit 30, and/or for controlling the supply of precursors A, B and flushing gas C. In other embodiments, the supply valve can be omitted. The first precursor container 10 is coupled to the supply conduit 30 by a first precursor conduit 16. The first precursor conduit 16 is provided with a first dispensing valve 22 for performing the supply of the first precursor A from the first precursor container 10. The second precursor container 12 is coupled to the supply conduit 30 by a second precursor conduit 18. The second precursor conduit 18 is provided with a second dispensing valve 24 for supplying a second precursor B from the second precursor container 12. The flushing gas container 14 is connected to the supply conduit 30 with a flushing gas conduit 20. The flushing gas conduit 20 is provided with a flushing gas dispensing valve 26 for supplying the flushing gas C from the flushing gas container 14. As shown in FIG. 1, the first precursor conduit 16, the second precursor conduit 18, and the flushing gas conduit 20 are all connected to the supply conduit 30 at a branch point 28. This means that in the present embodiment, the supply conduit 30 is associated with all of the precursors A, B and the flushing gas C. Alternatively, the first and second precursor conduits 16, 18 can be separated from the flushing gas conduit 20 and extend directly to the reaction chamber 2. It is also possible for the two or more precursor conduits 16, 18 to have a common supply conduit 30 with the flushing gas conduit 20. As shown in Figure 1 In the case of a shared supply conduit, the supply valve 32 may also be formed, or it may function as a dispensing valve. The dispensing valves 22, 24, 26 may also be provided to, or connected to, the precursor containers 10, 12 or the flushing gas container 14, rather than the precursor conduits 16, 18 and the flushing gas conduit 20. Alternatively, the dispensing valve can be placed to or connected to the reaction chamber 2, particularly when the separate precursor conduits extend directly into the reaction chamber 2.

Some ALD-based system using a continuous nitrogen (N ₂₎ stream flow passes through the deposition system, and by the gas mass flow controller to replace the gas flushing valve 26 formulation.

The precursor system 6 also includes an extraction conduit 34 from which the precursors A, B and flushing gas C can be discharged. The extraction conduit 34 can have suction by using an air pump or the like (not shown). The extraction conduit 34 may also be provided with a purge valve 36 for opening and closing the extraction conduit 34 and/or for controlling discharge from the reaction chamber 2.

In the precursor containers 10, 12, the precursors A and B are normally liquid or solid, but they may also be in a gaseous state. During the non-dosing state of precursors A, B, the dispensing valves 22, 24 are closed, and during a dispensing state, the dispensing valves 22, 24 are briefly opened to initiate the first dispensing pulse A. B is supplied to the reaction chamber 2. Likewise, during a flush state, the flush gas dispensing valve 26 is opened to supply flushing gas C to the reaction chamber 2, and during the non-flushing state, the flushing gas dispensing valve 26 is closed. A dispensing valve 22, 24, 26 is opened each time to separately supply the precursors A, B and the flushing gas C to the reaction chamber 2. Thus, the dispensing valves 22, 24 are or can be configured to supply a desired dose of precursors A, B to the substrate 5 by opening and closing the dispensing valves 22, 24.

The precursors A, B are maintained in the precursor containers 10, 12 under specific conditions. Therefore, the inside of the precursor containers 10, 12 has a specific pressure and temperature. When the dosing valves 22, 24 are open, the precursor vapor or gas in the vessel will flow through the dosing valves 22, 24 to the reaction chamber 2. The liquid or solid precursors A, B will vaporize or sublime during and/or between supply doses. In the case of a gaseous precursor A, B or flushing gas C, no vaporization occurs, and the precursors A, B or flushing gas C will flow through the dosing valves 22, 24, 26 to the reaction chamber 2. The precursors A, B can be heated in the precursor containers 10, 12 to maintain a desired temperature. This heating can be performed by a radiant heater, a conduction heater, or a convection heater (not shown). Figure 1 shows a particular embodiment of the invention in which the ALD device is provided with a plurality of temperature sensors 9, 11, and 19. Temperature sensors 9, 11, 19 are positioned to the precursor conduits 16, 18 and supply conduit 30 of the precursor system 6, respectively, and upstream of the dispense valves 16, 18 and supply valve 32. The temperature sensors 9, 11, 19 are configured to detect the supply of at least one vapor phase precursors A, B to the reaction chamber 2. The temperature sensors 9, 11, 19 can be, for example, a resistive temperature detector, a resistive thermal detector (RTD), a thermistor, a half-sensing sensor, a thermocouple, a thermoelectric element, and a An infrared thermometer, or a known type of temperature sensor such as a Coulomb Blackade thermometer. An expensive system that directly or indirectly detects the temperature of the gas/vapor molecules can also be used. Alternatively, the temperature sensors 9, 11, 19 may comprise any type of thermoelectric element that is configured to the supply conduit 30 or the precursor conduits 16, 18. The quality of the thermoelectric element can preferably be small, allowing it to detect very small temperature changes. In this type of configuration, the temperature sensors 9, 11, 19 can be configured to monitor changes in thermoelectric element temperature set to the supply conduit 30.

As shown in FIG. 1, the first precursor container 10 is connected to the supply conduit 30 by a first precursor conduit 16 provided with a first dispensing valve 22. Second first The mass container 12 is connected to the supply conduit 30 by a second precursor conduit 18 provided with a second dispensing valve 22. In a non-dispensing state, the dispensing valves 22, 24 are closed, and when a dose of precursor A or B is supplied to the reaction chamber 2, the respective dispensing valves 22, 24 will briefly open. In the non-dispensing state of one of the dispensing valves 22, 24, the dispensing valves 22, 24 prevent the precursors A, B from flowing to the reaction chamber 2. When gas, liquid, or solid precursors A, B are used, the free gas spaces of the precursor containers 10, 12 will have a specific precursor A, B vapor pressure. The free gas space means that in the case of a liquid or solid precursor, the containers 10, 12 have a dispensing valve 22, 24, which is not occupied by the precursors A, B. When a gaseous precursor is used, the free gas space means that the entire container 10, 12 of the dispensing valves 22, 24 is in space. Therefore, the free gas space includes a space in the precursor containers 10, 12 that is not occupied by the precursors A, B, and the dispensing valve 22, 24 or, in some cases, the supply valve 30 on the inside of the precursor conduit. Space. According to the above, the temperature sensors 9, 11, 19 can be disposed in fluid connection with the interior of the precursor containers 10, 12 or with the precursors A, B in the precursor containers 10, 12. Free gas space. The temperature sensors are configured to the precursor system and are in a free gas space upstream of the dispensing valve. The edge material is supplied from the precursor container to the reaction space via the precursor conduit, and the dispensing valve is disposed between the precursor container and the reaction space. Therefore, arranging the temperature sensor to the free gas space upstream of the dispensing valve means that the temperature sensor is placed, when the dispensing valve is closed, with the precursor or the inner body of the precursor container A free gas space for fluid connection. In other words, the temperature sensor is disposed in the precursor container or in the free gas space between the precursor container and the dispensing valve.

Therefore, all surfaces of the free gas space are exposed to the vapor phase Precursor A and B. In the state of the formulation of precursors A and B, each of the compounding valves 22, 24 is opened, causing the precursors A, B to detach from the inner body of the free gas space and also from the surface of the free gas space. The detachment of precursors A and B can occur due to evaporation, flow, or sublimation of precursors A and B. The detachment of the precursors A, B from the surface of the free gas space will consume energy, and thus the temperature of the surface will temporarily decrease. The energy consumed by the precursors A, B from the surface is at least partially removed directly from the surface material by thermal energy.

In the specific embodiment of Fig. 1, there is a first temperature sensor 9 disposed in the free space of the first precursor container 10 upstream of the first dispensing valve 22 of the first precursor conduit 16. A second temperature sensor 11 is disposed to the second precursor container 12 disposed upstream of the second reagent valve 24 of the second precursor conduit 18 to free the gas space. The temperature sensors 9, 11 may be located in the free gas space inside the precursor containers 10, 12, or in the precursor conduits 16, 18 upstream of the dispensing valves 22, 24. In a non-dispensing state, the temperature sensors 9, 11 are also exposed to the precursor vapor, and the precursor vapor is also attached to or in contact with the surface of the temperature sensors 9, 11 to cause the temperature sensors 9, 11 The temperature can reach the temperature of the precursor vapor during a sufficiently long exposure period. When the dispensing valves 22, 24 are opened, the pressure inside the free gas spaces upstream of the precursor containers 10, 12 and the dispensing valves 22, 24 will decrease, and the precursors A, B will flow out from the precursor containers 10, 12 to In the reaction chamber 2, the precursors A, B will be separated from the surface of the temperature sensors 9, 11. The precursors A, B are separated from the surface of the temperature sensors 9, 11 and will lower the temperature of the temperature sensors 9, 11. In some embodiments, the precursors A, B are vaporized from the surface of the temperature sensors 9, 11. This evaporation will cause the temperature of the temperature sensors 9, 11 to decrease as the energy is extracted by evaporation. The edge is that the temperature sensors 9, 11 can monitor and detect the separation of the precursors A, B or steam. The hair, and thus the precursors A, B, are supplied to the reaction chamber during the dispensing state in which the dispensing valves 22, 24 are open. Figure 2 shows another alternative embodiment in which a floating temperature sensor 15 is disposed inside the precursor container 10 containing the liquid precursor A and is specifically disposed to the inside of the precursor container 10 Free gas space 38. As shown in FIG. 2, at least a portion of the floating temperature sensor 15 remains above the liquid precursor A surface level in the free gas space 38 of the precursor container 10. This result can be achieved by maintaining the thermoelectric element of one of the floating temperature sensors above the surface of the liquid precursor A. The precursor container 10 is coupled to a precursor conduit 16 having a dispensing valve 22. In a non-dispensing state, the floating temperature sensor 15 is at least partially exposed to the precursor vapor in the free gas space 38. When the dispensing valve 22 is opened, the pressure inside the precursor container 10 and the free gas space 38 will drop and the liquid precursor A will evaporate.

Evaporation also occurs on the surface of the floating temperature sensor 15 above the surface level of the liquid precursor A, and thus the temperature of the floating evaporation temperature sensor 15 will decrease as the energy is removed by evaporation. The edge is that the floating temperature sensor 15 can monitor and detect the evaporation of the precursor A, and thus the supply of the precursor A to the reaction chamber 2 during the dispensing state of the dispensing valve 22. Further, the floating temperature sensor 15 can be configured to monitor the surface level of the liquid precursor A in the precursor container 10, or the position or slope of the precursor container 10. Therefore, the temperature sensor 15 can be disposed inside the precursor containers 10, 12 as a liquid level sensor for detecting the liquid level of the liquid precursors A and B in the precursor containers 10, 12. Or the location of the containers 10, 12. The floating temperature sensor 15 can be connected via a signal line 40 to a control system 42 such as a computer system to control the operation of the ALD device and control the supply of the precursor A to the reaction chamber 2. The floating temperature sensor 15 can be a resistor Temperature detector, a resistive thermal detector (RTD), a thermistor, a half-sensing sensor, a thermocouple, a thermoelectric element, an infrared thermometer, or a Coulomb Blackade thermometer .

Figure 3 shows yet another embodiment of the present invention in which a plurality of temperature sensors 17 are disposed to the precursor container 10. The temperature sensor 17 is successively positioned from the bottom of the precursor container 10 to the upper portion of the precursor container 10 such that when the surface level of the liquid precursor A drops, the temperature sensor 17 will be exposed from the liquid precursor A. A temperature sensor 17 can be attached to the inner side wall of the precursor container 10. This type of configuration may include one or more temperature sensors 17 that act as liquid level sensors in the precursor container 10. When the ALD device is used, a portion of the precursor A will evaporate during each formulation and is supplied to the reaction chamber to process a substrate. Therefore, the total amount of precursor A in the precursor container 10 will decrease, and the surface level of the precursor A will decrease. When the temperature sensor 17 is exposed above the surface level of the liquid precursor A, it is located in the free gas space 38 of the precursor container, and can detect the evaporation of the precursor A during the formulation state, as described above. Narrator. All of the evaporative temperature sensors 17 can be connected to a control system 42 such as computer system 42 via signal lines. The configuration of Figure 3 can be used to monitor and detect precursor A evaporation during the formulation state, and thus supply to the precursor A of the reaction chamber 2. Further, the temperature sensor 17 can be configured to monitor the surface level of the liquid precursor A in the precursor container 10, or the position or slope of the precursor container 10. This can be achieved by monitoring which of the temperature sensors 17 can detect a change in temperature due to evaporation of the precursor A during a dispensing period. The temperature sensor 17 which does not detect the evaporation of the precursor A is located below the surface level of the liquid precursor A. The temperature sensor 17 can be a resistive temperature detector, a resistive thermal detector (RTD), a thermistor, a semi-conductive sensor, A thermocouple, a thermoelectric element, an infrared thermometer, or a Coulomb Blackade thermometer.

In accordance with the above, the present invention provides an ALD apparatus in which one or more temperature sensors are used to monitor or detect the supply of precursors A, B and/or flushing gas to a reaction chamber in a process. It is used to make the surface of a substrate 5 pass through a continuous surface reaction of at least a first gaseous precursor A and a second gaseous precursor B. Furthermore, the present invention can provide an ALD apparatus in which one or more temperature sensors can be used to monitor the surface level of a liquid precursor A, B in a process in a precursor container 10, 12, The treatment is used to react the surface of a substrate 5 through a continuous surface of at least one of the first precursor A and the second precursor B. In general, the present invention provides an apparatus and method for monitoring or detecting a precursor supply to a reaction chamber or reaction space by temperature measurement.

In the present invention, a plurality of temperature sensors may be disposed in the precursor container or in the free gas space upstream of the dispensing valve to detect the evaporation during the dispensing state by the temperature change caused by the evaporation. . Therefore, the temperature sensors are in a position where they are in a non-dispensing state in which the dispensing valve is closed, and are in a position where they can be fluidly connected to a liquid or solid precursor. Please note that the ALD device may include one or more of the above temperature sensors, and the measurement results of the temperature sensors may in turn be used to control or adjust the precursor supply and evaporation, or other actuation characteristics.

The present invention provides a method for measuring the temperature of a temperature sensor 9 , 11 , 15 , 17 , 19 disposed in free gas spaces 16 , 18 , 30 , 38 to detect a supply of precursors A and B, the free gas The space is fluidly connected to the interior of the precursor containers 10, 12 or to the precursors A, B of the precursor containers 10, 12. The method can be used to sense the temperature during the supply of precursors A and B. The detectors 9, 11, 15, 17, 19 measure the temperature to detect vaporization of the liquid or solid precursors A, B in the free gas spaces 16, 18, 30, 38. The method is based on detecting a precursor supply by measuring temperature, which comprises detecting a temperature change of a thermoelectric element of one of the temperature sensors 9, 11, 15, 17, 19 during supply of the precursors A, B, or The temperature change caused by evaporation of the precursors A, B in the free gas spaces 16, 18, 30, 38 is measured by the temperature sensors 9, 11, 15, 17, 19 when the dispensing valve is opened.

The invention further provides for the use of temperature sensors 8, 9, 11, 13, 15, 17, 19 during the supply of precursors A, B, with precursors A, B and dispensing valves 22, 24, 32 The temperature sensors 9, 11, 15, 17, 19 of the free gas spaces 16, 18, 30, 38 measure temperature changes to detect a process, by opening and closing the precursor supply lines 16, 18, The dispensing valves 22, 24, 32 provided on the 30 are supplied from the precursor containers 10, 12 to the gaseous precursors A, B of the reaction chamber 7 via the precursor supply lines 16, 18, 30 for processing The surface of a substrate 5 passes through at least a coherent surface reactant of a first precursor A and a second precursor B. The invention also provides a use of a temperature sensor 17 for detecting the surface level of one or more liquid precursors A, B in a process in the precursor containers 10, 12, the treatment being used for The surface of a substrate 5 is passed through a continuous surface reactant of at least a first precursor A and a second precursor B.

Those skilled in the art will appreciate that as the technology advances, the basic concept of the invention can be implemented in a variety of different ways. The invention and its specific embodiments are therefore not limited to the above examples, which may vary within the scope of the patent application.

2‧‧‧Reaction chamber (reaction space)

4‧‧ ‧ room

5‧‧‧Substrate

6‧‧‧ precursor system

7‧‧‧Reaction space

9‧‧‧Temperature Sensor

10‧‧‧Precursor container

11‧‧‧Temperature Sensor

12‧‧‧Precursor container

14‧‧‧Washing gas container

16‧‧‧Precursor conduit (precursor supply line) (free gas space)

18‧‧‧Secondary conduit (precursor supply line) (free gas space)

19‧‧‧ Temperature Sensor

20‧‧‧ flushing gas conduit

22‧‧‧ dispense valve

24‧‧‧ dispense valve

26‧‧‧ dispense valve

28‧‧‧ branch point

30‧‧‧Precursor supply pipeline (free gas space)

32‧‧‧ dispense valve (supply valve)

34‧‧‧Extraction catheter

36‧‧‧Exhaust valve

A‧‧‧First precursor

B‧‧‧Second precursor

C‧‧‧ flushing gas

Claims (18)

A device for treating a substrate (5) by subjecting a surface of a substrate (5) to a continuous surface reaction of at least a first gaseous precursor (A) and a second gaseous precursor (B), the device comprising: a reaction space (2) in which the substrate (5) is treated; and a precursor system (6) for supplying the at least first and second precursors (A, B) to the reaction space (7) The precursor system (6) comprises: a precursor container (10, 12) for a precursor (A, B); a precursor supply conduit (16, 18, 30) for the precursor ( A, B) supplied from the precursor container (10, 12) to the reaction space (7); and a dispensing valve (22, 24, 32) disposed in the precursor container (10, 12) and the reaction Between the spaces (7), the dispensing valve (22, 24, 32) is opened and closed, and a dose of the precursor (A, B) is supplied to the reaction space (7), characterized in that the device is still A temperature sensor (9, 11, 15, 17, 19) is disposed to the precursor system (6), free gas space upstream of the dispensing valve (22, 24, 32) (16, 18) , 30, 38), for detecting the supply of one or more gaseous precursors (A, B) towards the reaction space (2). The device of claim 1, wherein the temperature sensor (9, 11, 15, 17, 19) is disposed in a free gas space (16, 18, 30, 38), and The interior of the precursor container (10, 12) is fluidly connected or fluidly connected to the precursor (A, B) in the precursor container (10, 12). The device of claim 1 or 2, wherein the dispensing valve (22, 24, 32) is a precursor supply conduit (16, 18, 30) disposed between the precursor container (10, 12) and the reaction space (7), or is disposed to the precursor container (10) , 12). The apparatus of any one of claims 1 to 3, wherein the temperature sensor (15, 17) is configured to be other than the liquid or solid precursor (A, B) The inner container (10, 12) has a free gas space (38) inside. The device of claim 4, wherein the temperature sensor (9, 11, 15, 17) is disposed inside the precursor container (10, 12) as a liquid level sensor, The surface level of the liquid precursor (A, B) in the precursor container (10, 12) or the position of the precursor container (10, 12) is detected. The device of claim 3, wherein the temperature sensor (9, 11, 19) is a precursor supply conduit (16, 18) disposed upstream of the dispensing valve (22, 24, 32). , 30), to detect the supply of the precursor (A, B), or to detect the vaporization of the precursor (A, B). The device of any one of claims 1 to 5, wherein the temperature sensor (9, 11, 15, 17, 19) is a resistive temperature detector, a resistive thermal detection (RTD), a thermistor, a half-sensing sensor, a thermocouple, a thermoelectric element, an infrared thermometer, or a Coulomb Blackade type thermometer. Treating the substrate in a reaction space (7) by reacting a surface of one of the substrates (5) through at least one of a first gaseous precursor (A) and a second gaseous precursor (B) (5) The method comprising, by opening and closing a dispensing valve (22, 24, 32) disposed between a precursor container (10, 12) and the reaction space (7), a dose of the precursor (A, B) from the precursor container (10, 12) supplied to the reaction space (7) via a precursor supply conduit (16, 18, 30), characterized in that the method further comprises, by means of the dispensing valve (22, 24, 32) Temperature measurement by a temperature sensor (9, 11, 15, 17, 19) in the upstream free gas space (16, 18, 30, 38) to detect the supply of a precursor (A, B) . The method of claim 8 wherein the method is in a free gas space (16, 18, 30, 38), fluidly connected to the interior of the precursor container (10, 12) or The precursor (A, B) in the precursor container (10, 12) is used as a fluid-connected temperature sensor (9, 11, 15, 17, 19) to measure the temperature to detect the precursor (A, B) Supply. The method of claim 8 or claim 9, wherein the method comprises measuring the temperature by the temperature sensor (9, 11, 15, 17, 19) during the supply of the precursor (A, B) To detect vaporization of the liquid or solid precursor (A, B) in the free gas space (16, 18, 30, 38). The method of any of claims 8 or 10, wherein detecting the temperature supply by measuring the temperature comprises detecting the temperature sensor during the supply of the precursor (A, B) ( 9,11,15,17,19) A temperature change of one of the thermoelectric elements. The method of any one of claims 8 to 11, wherein the method comprises measuring the free gas space (16, 18) by the temperature sensor (9, 11, 15, 17, 19) , 30, 38) of the precursor (A, B), the temperature change caused by evaporation when the formulation valve is opened. The method of any one of claims 8 to 12, wherein During the supply of the precursor (A, B), the precursor supply conduit (16, 18, 30) upstream of the precursor container (10, 12) or upstream of the dispensing valve (22, 24, 32) The temperature sensor (9, 11, 15, 17, 19) measures the temperature. The method of any one of claims 8 to 13, wherein the supply of the gaseous precursor (A, B) is monitored according to the temperature measurement of the temperature sensor (15, 17), To detect the surface level of the liquid precursor (A, B) in the precursor container (10, 12). The method of any one of claims 8 to 14, wherein the temperature measurement is performed by a resistive temperature detector, a resistive thermal detector (RTD), a thermistor, and a half. A sensor, a thermocouple, a thermoelectric element, an infrared thermometer, or a Coulomb Blackade thermometer is used. The method according to any one of claims 8 to 15, wherein the supply of the precursor (A, B) is adjusted based on the temperature measurement result, or is adjusted based on the temperature measurement result. The dispensing valve is opened and closed. A temperature sensor (8, 9, 11, 13, 15, 17, 19) used by a free gas between a precursor (A, B) and a dispensing valve (22, 24, 32) A temperature sensor (9, 11, 15, 17, 19) in the space (16, 18, 30, 38) is measured by a turn-on and turn-off setting to a precursor supply line (16, 18, 30) the dispensing valve (22, 24, 32), and the precursor from the precursor reservoir (10, 12) to the reaction space (7) via the precursor supply line (16, 18, 30) ( A, B) the temperature change during the supply to detect the supply of the gaseous precursor (A, B), the process is such that the surface of a substrate (5) passes through at least a first precursor (A) and a second Coherent surface responders of precursor (B). A temperature sensor (17) for detecting one or more liquid precursors (A, B) in a process, a surface level in a precursor container (10, 12), the treatment The surface of a substrate (5) is passed through a continuous surface reactant of at least a first precursor (A) and a second precursor (B).