FI20105909A0 - Suutinpää - Google Patents
SuutinpääInfo
- Publication number
- FI20105909A0 FI20105909A0 FI20105909A FI20105909A FI20105909A0 FI 20105909 A0 FI20105909 A0 FI 20105909A0 FI 20105909 A FI20105909 A FI 20105909A FI 20105909 A FI20105909 A FI 20105909A FI 20105909 A0 FI20105909 A0 FI 20105909A0
- Authority
- FI
- Finland
- Prior art keywords
- spray head
- spray
- head
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
- C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
- C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Coating Apparatus (AREA)
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FI20105909A FI20105909A0 (fi) | 2010-08-30 | 2010-08-30 | Suutinpää |
DE112011102859T DE112011102859T5 (de) | 2010-08-30 | 2011-08-29 | Düsenkopf |
PCT/FI2011/050750 WO2012028782A1 (en) | 2010-08-30 | 2011-08-29 | Nozzle head |
EA201390271A EA022825B1 (ru) | 2010-08-30 | 2011-08-29 | Распылительная головка |
CN201180041750.8A CN103080372B (zh) | 2010-08-30 | 2011-08-29 | 喷嘴头 |
TW100131025A TWI542412B (zh) | 2010-08-30 | 2011-08-30 | 噴嘴頭及用於處理基板之表面的裝置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FI20105909A FI20105909A0 (fi) | 2010-08-30 | 2010-08-30 | Suutinpää |
Publications (1)
Publication Number | Publication Date |
---|---|
FI20105909A0 true FI20105909A0 (fi) | 2010-08-30 |
Family
ID=42669413
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FI20105909A FI20105909A0 (fi) | 2010-08-30 | 2010-08-30 | Suutinpää |
Country Status (6)
Country | Link |
---|---|
CN (1) | CN103080372B (ru) |
DE (1) | DE112011102859T5 (ru) |
EA (1) | EA022825B1 (ru) |
FI (1) | FI20105909A0 (ru) |
TW (1) | TWI542412B (ru) |
WO (1) | WO2012028782A1 (ru) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5432396B1 (ja) | 2013-02-28 | 2014-03-05 | 三井造船株式会社 | 成膜装置及びインジェクタ |
FI126315B (en) * | 2014-07-07 | 2016-09-30 | Beneq Oy | A nozzle head, apparatus and method for subjecting a substrate surface to successive surface reactions |
FI129730B (en) * | 2017-10-18 | 2022-08-15 | Beneq Oy | Nozzle and nozzle head |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7537662B2 (en) * | 2003-04-29 | 2009-05-26 | Asm International N.V. | Method and apparatus for depositing thin films on a surface |
US7789961B2 (en) * | 2007-01-08 | 2010-09-07 | Eastman Kodak Company | Delivery device comprising gas diffuser for thin film deposition |
US8207063B2 (en) * | 2007-01-26 | 2012-06-26 | Eastman Kodak Company | Process for atomic layer deposition |
US8043432B2 (en) * | 2007-02-12 | 2011-10-25 | Tokyo Electron Limited | Atomic layer deposition systems and methods |
US8287647B2 (en) * | 2007-04-17 | 2012-10-16 | Lam Research Corporation | Apparatus and method for atomic layer deposition |
US8182608B2 (en) * | 2007-09-26 | 2012-05-22 | Eastman Kodak Company | Deposition system for thin film formation |
US8758512B2 (en) * | 2009-06-08 | 2014-06-24 | Veeco Ald Inc. | Vapor deposition reactor and method for forming thin film |
US20110076421A1 (en) * | 2009-09-30 | 2011-03-31 | Synos Technology, Inc. | Vapor deposition reactor for forming thin film on curved surface |
-
2010
- 2010-08-30 FI FI20105909A patent/FI20105909A0/fi not_active Application Discontinuation
-
2011
- 2011-08-29 EA EA201390271A patent/EA022825B1/ru not_active IP Right Cessation
- 2011-08-29 DE DE112011102859T patent/DE112011102859T5/de active Pending
- 2011-08-29 WO PCT/FI2011/050750 patent/WO2012028782A1/en active Application Filing
- 2011-08-29 CN CN201180041750.8A patent/CN103080372B/zh active Active
- 2011-08-30 TW TW100131025A patent/TWI542412B/zh active
Also Published As
Publication number | Publication date |
---|---|
TW201217061A (en) | 2012-05-01 |
EA022825B1 (ru) | 2016-03-31 |
EA201390271A1 (ru) | 2013-08-30 |
DE112011102859T5 (de) | 2013-08-08 |
CN103080372B (zh) | 2015-05-27 |
TWI542412B (zh) | 2016-07-21 |
WO2012028782A1 (en) | 2012-03-08 |
CN103080372A (zh) | 2013-05-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
FD | Application lapsed |