TWI541866B - 處理基底的方法 - Google Patents

處理基底的方法 Download PDF

Info

Publication number
TWI541866B
TWI541866B TW103120272A TW103120272A TWI541866B TW I541866 B TWI541866 B TW I541866B TW 103120272 A TW103120272 A TW 103120272A TW 103120272 A TW103120272 A TW 103120272A TW I541866 B TWI541866 B TW I541866B
Authority
TW
Taiwan
Prior art keywords
substrate
alignment mark
reference point
laser beam
distance
Prior art date
Application number
TW103120272A
Other languages
English (en)
Chinese (zh)
Other versions
TW201447985A (zh
Inventor
蘇二彬
崔均旭
黃潤鎬
Original Assignee
Ap系統股份有限公司
三星顯示有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ap系統股份有限公司, 三星顯示有限公司 filed Critical Ap系統股份有限公司
Publication of TW201447985A publication Critical patent/TW201447985A/zh
Application granted granted Critical
Publication of TWI541866B publication Critical patent/TWI541866B/zh

Links

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Recrystallisation Techniques (AREA)
  • Optics & Photonics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Health & Medical Sciences (AREA)
TW103120272A 2013-06-14 2014-06-12 處理基底的方法 TWI541866B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020130068365A KR101432156B1 (ko) 2013-06-14 2013-06-14 기판 처리 방법

Publications (2)

Publication Number Publication Date
TW201447985A TW201447985A (zh) 2014-12-16
TWI541866B true TWI541866B (zh) 2016-07-11

Family

ID=51750893

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103120272A TWI541866B (zh) 2013-06-14 2014-06-12 處理基底的方法

Country Status (3)

Country Link
KR (1) KR101432156B1 (ko)
CN (1) CN104241091B (ko)
TW (1) TWI541866B (ko)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20240100661A (ko) * 2022-12-23 2024-07-02 주식회사 선익시스템 이종의 다중 정렬 키를 이용한 기판의 정렬 방법

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW527732B (en) * 2001-08-21 2003-04-11 Samsung Electronics Co Ltd Masks for forming polysilicon and methods for manufacturing thin film transistor using the masks
KR100876275B1 (ko) * 2002-11-18 2008-12-26 삼성모바일디스플레이주식회사 레이저 결정화 장비용 패턴 마스크
KR100525443B1 (ko) * 2003-12-24 2005-11-02 엘지.필립스 엘시디 주식회사 결정화 장비 및 이를 이용한 결정화 방법
KR20070072200A (ko) * 2005-12-30 2007-07-04 엘지.필립스 엘시디 주식회사 실리콘 결정화 장치 및 이를 이용한 실리콘 결정화방법
JP2007214388A (ja) * 2006-02-09 2007-08-23 Shimadzu Corp 結晶化装置、および位置決めステージ
KR101135537B1 (ko) * 2010-07-16 2012-04-13 삼성모바일디스플레이주식회사 레이저 조사 장치
KR20120025300A (ko) * 2010-09-07 2012-03-15 삼성모바일디스플레이주식회사 다결정 규소막 검사 장치 및 검사 방법

Also Published As

Publication number Publication date
TW201447985A (zh) 2014-12-16
CN104241091B (zh) 2017-09-22
KR101432156B1 (ko) 2014-08-20
CN104241091A (zh) 2014-12-24

Similar Documents

Publication Publication Date Title
US8476553B2 (en) Method of dividing workpiece
US7867431B2 (en) Method of and apparatus for making a three-dimensional object
TWI670131B (zh) 雷射加工裝置
KR20180105079A (ko) 레이저 가공 장치
US10585361B2 (en) Projection exposure apparatus and method
US20170186656A1 (en) Wafer processing method
KR101297374B1 (ko) 기판 정렬 방법 및 그를 이용한 증착 시스템
JP2010509067A (ja) 太陽電池パネルのスクライブのためのレーザビームアラインメントの方法および装置
KR102000334B1 (ko) 얼라인먼트 마크의 검출 방법, 얼라인먼트 방법 및 증착 방법
JP2007048835A (ja) レーザ加工装置及びそれを用いた太陽電池基板のパターニング方法
CN104296874A (zh) 光取向用偏振光照射装置以及光取向用偏振光照射方法
TWI713091B (zh) 雷射退火方法、雷射退火裝置及薄膜電晶體基板
JP2009297742A (ja) レーザ加工装置
TW201139084A (en) Metrology system for imaging workpiece surfaces at high robot transfer speeds
US11835866B2 (en) Method and system of surface topography measurement for lithography
KR101852663B1 (ko) 편광광 조사 장치
JP5344766B2 (ja) フォトマスク及びそれを使用するレーザアニール装置並びに露光装置
TWI541866B (zh) 處理基底的方法
JP2007237199A (ja) レーザ加工装置及びレーザ加工方法
KR102313363B1 (ko) 레이저 어닐링 장치
KR20170041378A (ko) 기판 측정 방법 및 이를 이용한 반도체 장치 제조 방법
JP2006263803A (ja) レーザ加工方法及びレーザ加工装置
JPH0581357B2 (ko)
TW201504768A (zh) 基板上的圖案化方法
US9221122B2 (en) Method of controlling a laser beam annealing apparatus to manufacture thin film transistor substrate