TWI541866B - Method of processing substrate - Google Patents

Description

Method of processing a substrate

The present invention relates to a method of treating a substrate for aligning and crystallizing a substrate, and more particularly to a method of processing a substrate capable of accurately placing a crystalline pattern of a laser beam.

The method of crystallizing the substrate includes sequential lateral solidification (SLS) and eximer laser annealing (ELA) techniques.

The SLS technique induces lateral growth to obtain a crystal similar to a single crystal, and the crystal obtained by using the technique has a large field effect mobility. However, since the radiation laser beam is highly energy-dependent, the process margin is not good, and since the accuracy of the stage on which the substrate is placed has a great influence on the processing, it is difficult to obtain uniformity over the entire substrate. The limitations of the results.

ELA technology induces vertical growth and its crystallization characteristics are inferior compared to SLS technology, but this technology has been widely used because of its excellent uniformity across the substrate.

A commonly used ELA device includes: a processing chamber; a substrate transfer unit installed in the processing chamber, holding the substrate and horizontally moving the substrate in a sequence in which processing is performed; a transparent window mounted on an upper portion of the processing chamber; A laser module disposed outside the processing chamber and emitting a laser beam; and a reflector disposed above the transparent window outside the processing chamber and emitting a laser beam from the laser module toward the transparent window.

The crystallization method using an ELA device is briefly described below. First, when a laser beam is emitted from a laser generator, the laser beam is reflected by the reflector, passes through the transparent window, and then enters the surface of the substrate. For example, a substrate having an amorphous germanium layer on its upper surface can be used and when a laser beam is radiated to the amorphous germanium layer, the amorphous germanium layer becomes liquid, solidifies and crystallizes, thus forming polycrystalline germanium Floor. In this case, in order to enable a plurality of substrates to be continuously crystallized, the laser beam is irradiated while horizontally moving the substrate.

As shown in FIG. 1, it shows that the laser beam is radiated to the surface of the substrate and crystallized, the laser beam module is fixed, and then the laser beam is irradiated while the substrate Sub moves back and forth several times forward and backward, thus A method of forming a crystalline pattern on a substrate. Due to the reciprocating motion of the substrate, a plurality of laser beams can be repeatedly radiated to the crystal pattern.

When the laser beam is first radiated to the first section, the substrate is placed such that the alignment marks of the substrate are placed on the centerline of the width of the laser beam, and then the laser beam is sequentially radiated to the crystallization target area. That is, by aligning the substrate so that the center point of the alignment mark matches the preset reference point, the alignment mark of the substrate can be placed On the centerline of the width of the laser beam. However, due to variations in the optical characteristics of the laser module, there is a limitation in that, as time passes, the alignment mark leaves the crystal target region and undergoes variations such as displacement and rotation, and a crystal pattern is formed in this state.

For example, when it is assumed that the portion formed by the broken line is a crystallization target region in which selective crystallization is performed, it can be seen that laser beam processing is performed, and the laser beam is radiated to the crystallization target region 1 as time passes. And thus the displacement of the crystal pattern 2a occurs as shown in Fig. 2(a). And, as shown in FIG. 2(b), it can be seen that laser beam processing is performed, and the laser beam is radiated to the outside of the crystal target region 1 at an angle with the passage of time, and thus the crystal pattern 2b is generated. Rotate.

Due to the characteristic changes of the laser beam module caused by the continuous oscillation of the laser beam, the fluctuation of the laser beam such as displacement and rotation occurs over time. That is, the variation of the laser beam occurs due to thermal deformation of the oscillator or reflector on the laser path caused by continuous oscillation.

However, although laser beam processing has been performed, the usual variations have not been improved. Passive measurements have been made which measure the degree of variation of the laser beam and analyze the cause after the laser beam is radiated to a plurality of substrates. That is, while the laser beam is sequentially radiated to the plurality of substrates, the degree of variation of the displacement of the laser beam is ignored and the laser beam is irradiated for crystallization. Therefore, after the completion of the laser beam processing, a portion of the amorphous target region on the substrate is crystallized due to the fluctuation of the laser beam, and thus there is a limitation in that the quality of the product is lowered.

[Patent Literature]

Patent Document 1: Korean Patent Publication No. 2012-0111759.

The present invention provides a method for aligning substrates in which the substrate is crystallized. The present invention further improves the positional accuracy in performing selective crystallization of the substrate. The present invention further improves the rotation or displacement of the laser beam caused by variations in the characteristics of the laser beam.

According to an exemplary embodiment, a method of processing a substrate includes: aligning a first substrate to have a first substrate starting position, thereby allowing an alignment mark formed on the first substrate to match a preset reference point; Radiating to the crystal target region of the first substrate and forming a crystal pattern while reciprocating the first substrate; calculating a correction deviation depending on the distance between the edge of the crystal pattern of the first substrate and the center point of the alignment mark and calculating the correction by reflection A correction reference point obtained by the deviation; and after placing the first substrate to the outside, aligning the second substrate to allow the alignment mark of the second substrate to be placed into the chamber to match the corrected reference point.

The calculation of the correction reference point may include: returning the first substrate to the first substrate starting position after completion of the crystallization patterning on the crystallization target region of the first substrate; identifying the first substrate returning to the starting position of the first substrate a position of the crystal pattern and the alignment mark; measuring a distance between an edge of the crystal pattern and a center point of the alignment mark; calculating a correction deviation depending on the distance; and adding a correction deviation to the reference point to calculate a correction reference point.

The measuring of the distance may include measuring a distance between one edge of the crystal pattern and a center point of the alignment mark, and another edge of the crystal pattern and the alignment mark Remember another distance between the center points.

The calculation of the correction bias may include dividing the difference between the distance and the other distance by two.

The correction of the reference point may include adding a correction deviation to the reference point or subtracting the correction deviation from the reference point to allow the position of the correction reference point to move to an edge having the larger of the distance and the other distance .

The method can further include placing the first substrate into the chamber prior to aligning the first substrate; and indexing the alignment mark on the first substrate.

The identification of the crystalline pattern of the first substrate and the position of the alignment mark returned to the starting position of the substrate may include: capturing the first substrate returned to the starting position of the first substrate by the CCD sensor and capturing by using the first substrate The image identifies the location.

The first substrate may comprise a plurality of segments and alignment marks are formed for each segment.

The alignment of the first substrate, the formation of the crystalline pattern, the calculation of the corrected reference point, and the alignment of the second substrate can be performed on each of the segments.

1‧‧‧ Crystallized target area

100‧‧‧Processing room

110‧‧‧transparent windows

120‧‧‧Base transfer unit

200‧‧ ‧ laser

210‧‧‧Laser oscillator

220‧‧‧ reflector

2a, 2b‧‧‧ crystal pattern

C‧‧‧ center axis

D1, d2‧‧‧ distance

Edge of E1, E2‧‧

M1, M2, M3‧‧‧ alignment marks

S‧‧‧ base

S1~Sn‧‧‧ crystal target area

S410, S420, S430, S440‧‧‧ Process

P‧‧‧ crystal pattern

P1~Pn‧‧‧ crystal target area/crystal pattern

+x, -x‧‧ direction

x, y‧‧‧ axis

The exemplary embodiments can be understood in more detail by the following description in conjunction with the accompanying drawings in which: FIG. 1 shows a method of radiating a laser beam to the surface of a substrate and performing crystallization. law.

Figures 2(a) and 2(b) show how variations occur in the crystalline pattern of the substrate.

Figure 3 illustrates a substrate processing apparatus for laser beam crystallization in accordance with one embodiment of the present invention.

4 is a flow chart of a process of correcting a change in accordance with one embodiment of the present invention.

5(a) through 5(g) are flow diagrams of a substrate processing process for correcting varying and radiating a laser beam in accordance with one embodiment of the present invention.

Figure 6 illustrates a method of performing selective crystallization in accordance with one embodiment of the present invention.

7(a) and 7(b) show the distance between the edge of the crystal pattern and the center point of the alignment mark according to an embodiment of the present invention.

8(a) and 8(b) illustrate a method of finding a correction reference point and moving a substrate when an alignment mark is present on the left side of the central axis of the crystal pattern, according to an embodiment of the present invention.

9(a) and 9(b) illustrate a method of finding a correction reference point and moving the substrate when an alignment mark is present on the right side of the central axis of the crystal pattern, according to an embodiment of the present invention.

Figures 10(a) through 10(c) illustrate a method of performing selective crystallization on each segment of a substrate comprising three segments in accordance with one embodiment of the present invention.

Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention, and any one of ordinary skill in the art can make some changes and refinements without departing from the spirit and scope of the present invention. The scope of the invention is defined by the scope of the appended claims.

Exemplary embodiments of the present invention are described in more detail below with reference to the accompanying drawings. However, the invention may be embodied in different forms and should not be construed as being limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and the scope of the invention will be fully conveyed by those skilled in the art. The same element symbols in the drawings denote the same elements.

Figure 3 illustrates a substrate processing apparatus for laser beam crystallization in accordance with one embodiment of the present invention.

A substrate processing apparatus for crystallization of a laser beam radiates a laser beam to a substrate for laser crystallization for crystallization of a film formed on the substrate Sub. The substrate processing apparatus includes: a processing chamber 100; a substrate transfer unit 120 installed in the processing chamber 100, holding the substrate Sub and moving the substrate horizontally forward and backward; a transparent window 110 installed in the processing chamber 100 On one side, facing the substrate transfer unit 120; and a laser module 200 including a laser oscillator 210 disposed outside the process chamber 100 and emitting a laser beam; and a reflector 220 disposed outside the process chamber 100 Above the transparent window 110. And, an alignment mark pattern generator (not shown) is disposed in the process chamber 100. The alignment mark pattern generator (not shown) is used to form alignment marks on the substrate and can be implemented as a plurality of units, for example, an etching unit and a laser patterning unit. And with charge coupled device (CCD) sensing An image camera (not shown) of the device is disposed in the processing chamber. An image camera (not shown) can capture the substrate and identify the alignment marks formed on the substrate and the location of the crystalline regions of the substrate.

The substrate Sub crystallization treatment using the substrate processing apparatus having such a configuration is briefly described below. First, when the substrate Sub is placed into the process chamber 100 and placed on the substrate transfer unit 120, a mark pattern generator (not shown) forms a plurality of alignment marks on the substrate. Subsequently, by using an image camera (not shown), the substrate transfer unit 120 is transferred to align the substrate Sub to match the alignment marks. When the substrate alignment is completed, the laser beam is radiated onto the substrate Sub. The laser beam is radiated onto the substrate while the substrate is horizontally moved by the substrate transfer unit 120. In this case, the substrate Sub may be, for example, a substrate having an amorphous germanium layer thereon, and the germanium layer is crystallized when the amorphous germanium layer is crystallized by using a laser beam crystallization device.

When the laser beam is radiated, the laser beam is only radiated to the crystal target region for selective crystallization. For example, by performing the opening and closing of the visor on the laser beam, the laser beam can be radiated only to the crystallization target area of the substrate moving below the beam module. That is, since the light shielding film is disposed on the laser beam path of the laser module, although the laser module continues the laser oscillation, the light shielding film can be opened and placed only in the crystallization target area of the substrate. The laser beam is radiated when the beam of the module is radiated on the path. Selective crystallization can be carried out by other techniques.

For example, due to the continuous oscillation of the beam, there may be inaccuracies The limitation of laser beam radiation is that, as time passes, the radiation region of the laser beam exits the region for crystallization and undergoes variations such as displacement and rotation. Accordingly, embodiments of the present invention include a controller (not shown) that is capable of correcting the displacement of a laser beam even during laser beam processing. Depending on the distance between the crystalline pattern of the substrate and the center point of the alignment mark, the controller (not shown) corrects the substrate starting position of the next substrate to improve the variation. Description will be made below with reference to FIG. 4.

4 is a flow chart of a process of correcting variations according to an embodiment of the present invention; and FIGS. 5(a) to 5(g) are flowcharts of a substrate processing process of a radiation laser beam according to an embodiment of the present invention. Figure.

In the following, an example of a method in which a plurality of substrates are sequentially placed into a processing chamber and crystallized by laser beam irradiation is described. Hereinafter, the substrate first placed into the processing chamber is referred to as a first substrate, and after performing the crystallization treatment of the first substrate, the first substrate is placed outside the processing chamber and moved to the substrate loading box by the substrate transfer device. Hereinafter, the next substrate placed in the processing chamber for crystallization after the first substrate is placed outside is referred to as a second substrate.

Specifically, as shown in FIG. 5(a), the first substrate is first placed into the processing chamber to provide a first substrate. The substrate is transferred from the substrate loading bin to the processing chamber by a substrate transfer device. The first substrate placed on the substrate support in the processing chamber is substantially aligned by the mechanical unit.

Subsequently, as shown in FIG. 5(b), the alignment mark M is formed on the first substrate Sub1 placed on the substrate support. By engraving or marking on the first substrate by using a plurality of alignment mark pattern generators (such as an etch unit and a laser patterning unit) An alignment mark M is formed. The alignment mark is an identification mark formed on the substrate, and can be used as an identification word used when aligning the substrate or correcting the position of the substrate according to the present invention. The alignment mark M may be formed as '+' and the intersection of the vertical line and the horizontal line where the '+' intersects is referred to as the center point of the alignment mark. Also, the alignment marks can be single or multiple.

In the process S410 of FIG. 4, after the alignment mark M is formed on the first substrate Sub1, a first substrate alignment process is performed in which the first substrate is aligned to have a first substrate start position such that it is formed on the first substrate The alignment mark matches the preset reference point. In this example, the reference point is the reference position information previously possessed by the controller and is preset to arrange the substrate at the preset position. Therefore, when the substrate is aligned to radiate the laser beam, the substrate is placed at a desired position by matching the alignment mark M formed on the substrate with the reference point. Also, the first substrate starting position may mean that the first crystalline target area of the substrate to which the laser beam is first radiated is placed below the laser module. That is, when the substrate is transported and aligned such that the center point of the alignment mark formed on the substrate matches the preset reference point, the first crystalline target area to which the laser beam is radiated is placed below the laser module. Therefore, when no change occurs and the laser beam is normally radiated, the center point of the alignment mark will be on the central axis of the crystal pattern region to which the laser beam is radiated.

The alignment of the substrate can be performed by using an image camera. The alignment marks of the substrate are identified by an image camera containing a charge coupled device (CCD) sensor and the substrate is then transmitted to match the preset reference point. That is, the image camera of the processing chamber reads the alignment marks, aligns, and transports the substrate to form on the substrate. The center point of the alignment mark matches the reference point, and thus the substrate can be aligned to have a first substrate starting position.

In the process S420, when the first substrate alignment is completed, a crystal patterning process is performed in which the crystal pattern is formed by radiating the laser beam to the crystal target region of the first substrate while the first substrate is reciprocating. Generally, when the crystallization of the substrate is carried out by laser beam irradiation, selective crystallization is performed only on some regions where crystallization is required instead of crystallization in all regions of the substrate. That is, as shown in FIG. 6, a plurality of crystal target regions S exist at regular intervals on the substrate, and laser beam radiation is performed on the crystal target region S for selective crystallization, thereby forming a plurality of crystal patterns P. In order to form such a selectively crystallized crystal pattern, the laser beam can be radiated only to the crystal target region S by emitting or blocking the laser beam when the laser beam is irradiated on the moving substrate.

Also, crystallization can be achieved by repeatedly radiating the laser beam to the same crystalline target region several times while the substrate is moving back and forth. For example, when it is desired to radiate a laser beam to the same crystalline target area six times, crystallization by the laser beam is performed by moving the substrate to the left and right sides three times, respectively. In the following, a region in which the laser beam radiation is completely completed and thus crystallizes is referred to as a crystal pattern.

In the crystal patterning process S420, as the substrate is transferred, the laser beam radiation is first performed on the first crystal target region as shown in FIG. 5(c) to form the crystal pattern P1, and the laser beam radiation can be followed. The order of the second crystallization target region P2 and the third crystallization target region P3 is performed. For reference, as shown in Figure 5(c) It is shown that when the characteristics of the laser beam have not changed and thus the laser beam is normally radiated without fluctuation, the center point of the alignment mark will be placed on the central axis of the region crystallized by the laser beam radiation.

For reference, FIG. 5(d) shows a method of transporting the substrate forward (ie, in the +x direction) and irradiating the laser beam to the third crystal target region to form the third crystal pattern P3, and FIG. 5 ( e) shows a method of transporting the substrate forward to the end and radiation of the laser beam to the last crystalline target region to form a crystalline pattern Pn. Figures 5(f) and 5(g) illustrate a method of transporting the substrate backwards (i.e., in the -x direction) and the laser beam again radiating to the previously irradiated crystalline target region.

This crystallization treatment can be repeatedly performed several times on the same crystal target region in such a manner that the substrate is repeatedly moved forward and backward in the x direction.

When the crystal patterning process S420 (of FIG. 4) is completed, the corrected reference point calculation process S430 (of FIG. 4) is performed, wherein the correction deviation is performed according to the distance between the edge of the crystal pattern of the first substrate and the center point of the alignment mark The correction deviation is calculated and reflected to calculate a corrected reference point obtained by correcting the reference point. When the laser oscillation is continuously performed, the line of the laser beam can be rotated or displaced due to changes in the characteristics of the laser module. Therefore, when the first substrate is placed outside the chamber and then the second substrate is placed into the chamber and laser radiation is performed, the reference point for referring to the initial placement of the second substrate is corrected such that the rotation of the laser beam Or shift can be corrected. Since the laser module is mechanically fixed, it is difficult to correct the position and the laser beam variation, for example, the rotation or displacement of the laser beam, can be improved by correcting the position of the substrate that is relatively free to move from the substrate support.

The corrected reference point calculation processing S430 is described in detail. When the crystal patterning on the crystal target region of the first substrate is completed, the substrate return processing in which the first substrate is returned to the initial position of the first substrate is performed. That is, the first substrate returns to the position where the alignment mark matches the reference point. Subsequently, the crystal pattern of the first substrate and the position of the alignment mark that have returned to the starting position of the first substrate are identified. To this end, the first substrate that has returned to the starting position of the first substrate is captured by using an image camera including a CCD sensor. The position information about each shape of the crystal pattern and the alignment mark is extracted from the captured image of the first substrate. In this example, the crystal pattern is the area of the first substrate irradiated by the laser beam, and since the area crystallized by the laser beam irradiation has a material different from the nearby amorphous area, the position information can be recognized by the image camera. Therefore, the position of the two edges of the crystal pattern can be recognized by using the image camera and the position of the center point of the alignment mark can be recognized.

Subsequently, the process of measuring the distance between the edge of the crystal pattern and the center point of the alignment mark is measured. Referring to Figure 7, which shows a portion of the substrate in detail, a crystalline pattern is formed on a portion of the substrate by laser beam radiation, and the distance between the center point of the first alignment mark M1 and the two edges of the crystal pattern can be measured. That is, the distance d1 between one edge of the crystal pattern P and the center point of the first alignment mark M1 and another distance d2 between the other edge of the crystal pattern P and the center point of the first alignment mark M1 are measured. Similarly, the distance between the second alignment mark M2 and the crystal pattern can be measured.

For example, when the laser beam is rotated due to a characteristic change of the laser beam, the first alignment mark M1 and/or the second alignment mark M2 of the first substrate Either of them will deviate from the central axis of the crystal pattern as shown in Fig. 7(a). Also, when the laser beam is displaced due to a characteristic change of the laser beam, all of the first alignment mark M1 and the second alignment mark M2 will deviate from the central axis of the crystal pattern as shown in Fig. 7(b).

In order for the second substrate after the first substrate to not undergo such variations, depending on the distance between the alignment marks and the edges of the crystalline pattern, embodiments of the present invention align the second substrate by correcting the reference points. After the laser oscillation, a plurality of substrates are sequentially placed into the processing chamber for crystallization, so that the variation of the laser beam can be instantly improved by identifying the crystal pattern of the first substrate and correcting the position of the second substrate.

In the correction reference point calculation process, the correction device is calculated depending on the distance and the correction deviation is added to the reference point to calculate the correction reference point. There may be a variety of techniques for calculating correction biases depending on the distance. For example, by dividing the value obtained by 2, the distance d1 between one edge of the crystal pattern and the center point of the alignment mark and another distance d2 between the other edge of the crystal pattern and the center point of the alignment mark The difference is determined as the correction deviation. This correction deviation is added to the reference point that will be determined as the correction reference point.

For reference, FIGS. 8(a) to 9(b) illustrate a method of calculating a corrected reference point by applying a correction deviation.

It is assumed that the laser beam is shifted due to the characteristic of the laser beam, and the center point of the alignment mark M is not located on the central axis C of the crystal pattern (as shown in FIG. 8(a)), but is located at a distance from the central axis C. In the -x direction (on the left). And, FIG. 9(a) assumes that the center point of the alignment mark M is not located on the central axis C of the crystal pattern, and It is located in the +x direction from the center axis C (on the right side).

The distance d1 which is the distance between one edge E1 of the crystal pattern and the center point of the alignment mark M and the other distance d2 which is the distance between the other edge E2 of the crystal pattern and the center point of the alignment mark M are measured. For reference, the center point of the alignment mark M corresponds to the reference point that is referenced when the substrate is initially aligned.

Between the distance d1 of the distance between one edge E1 of the crystal pattern and the center point of the alignment mark M and another distance d2 of the distance between the other edge E2 of the crystal pattern and the center point of the alignment mark M The difference is measured and divided by 2 to calculate the correction deviation. For example, when the distance d1 is 1.5 and the distance d2 is 0.5 as shown in FIG. 8(a), the difference becomes 1, and 0.5 obtained by dividing the difference by 2 becomes a correction deviation. Also, when the distance d1 is 0.2 and the distance d2 is 1.8 as shown in FIG. 9(a), the difference value becomes 1.6, and 0.8 obtained by dividing the difference value by 2 becomes a correction deviation.

The correction deviation calculated in this way is added to the reference point or subtracted from the reference point to calculate a new corrected reference point. To determine whether to add the correction deviation to the reference point or subtract the correction deviation from the reference point, add the correction deviation to the reference point or subtract the correction deviation from the reference point so that the position of the correction reference point is moved to have the distance d1 and The edge of the larger value in distance d2.

For example, when the distance d1 has a larger value as shown in FIG. 8(a), the reference correction point is moved by the correction deviation 0.5 in the +x direction corresponding to one edge E1 having the distance d1. Click to confirm. Therefore, when the alignment mark of the second substrate is aligned with the reference correction point, the second substrate is placed as shown in FIG. 8(b) and And thus displacement can be prevented from occurring when the laser beam is radiated to the second substrate. Likewise, when the distance d2 has a larger value as shown in FIG. 9(a), the reference correction point moves by a typical reference correction with a correction deviation of 0.8 in the -x direction corresponding to the other edge E2 having the distance d2. Click to confirm. Therefore, when the alignment mark of the second substrate is aligned with the reference correction point, the second substrate is placed as shown in FIG. 9(b) and thus displacement can be prevented from occurring when the laser beam is radiated to the second substrate.

An example of a method of performing laser beam irradiation over the entire substrate is described in the above-described embodiments of the present invention. However, large substrates such as liquid crystal display (LCD) panels can be selectively crystallized on each segment. Thus, embodiments of the present invention will also be applicable to crystallization of laser beam radiation even on each segment.

For example, when it is assumed that the substrate includes three segments as shown in FIGS. 10(a) to 10(c), the laser beam passes through the laser mode while the substrate reciprocates several times in the X-axis direction. The group 210 is sequentially radiated to the crystallization target region of the first segment as shown in Fig. 10(a). After completing the laser beam irradiation to the first section, the substrate is transported in the y-axis direction as shown in FIG. 10(b), and then the laser is reciprocated several times in the X-axis direction while the substrate is being moved. The beam is radiated to the crystalline target region of the second segment. Similarly, after completion of the laser beam irradiation to the second section, the substrate is transported in the y-axis direction as shown in FIG. 10(c), and then the substrate is reciprocated several times in the X-axis direction. The laser beam is radiated to the crystallization target region of the third segment.

Alignment marks M1, M2 or M3 are formed on each segment, and thus When the substrate is used for laser beam irradiation to each segment by using the distance between the alignment mark and the crystal pattern, the variation of the laser beam can be prevented by the reference point correction. That is, after performing the first substrate alignment process, the crystallization patterning process, and the correction reference point calculation process on each segment of the first substrate to determine the correction reference point, based on the irradiation of the laser beam to the second substrate The correction reference point calculated before each section performs the second substrate alignment processing, so that the variation of the second substrate can be prevented.

According to an embodiment of the present invention, the positional accuracy can be improved by aligning the substrates by using the correction deviation calculated for each substrate when performing the selective crystallization process. Also, selective crystallization can be performed on the correction portion of each substrate by measuring the alignment of the next substrate by using the laser beam of the substrate.

While the invention is described with reference to the drawings and exemplary embodiments, the invention is not limited thereto and is defined by the appended claims. Therefore, various changes and modifications can be made by those skilled in the art without departing from the spirit of the appended claims.

C‧‧‧ center axis

D1, d2‧‧‧ distance

Edge of E1, E2‧‧

+x, -x‧‧ direction

Claims (9)

A method of processing a substrate, comprising: aligning a first substrate to have a first substrate starting position to allow alignment marks formed on the first substrate to match a predetermined reference point; radiating a laser beam to the Forming a crystalline target region of the first substrate and forming a crystalline pattern while the first substrate reciprocates; calculating a distance between an edge of the crystalline pattern of the first substrate and a center point of the alignment mark Correcting the deviation and calculating a corrected reference point obtained by reflecting the correction deviation; and after placing the first substrate to the outside, aligning the second substrate to allow the alignment mark of the second substrate to be placed into the chamber Matches the corrected reference point. The method of processing a substrate according to claim 1, wherein the calculating of the corrected reference point comprises: after the crystallization patterning on the crystallization target region of the first substrate is completed, the first Returning the substrate to the first substrate starting position; identifying the crystalline pattern of the first substrate and the position of the alignment mark returned to the first substrate starting position; measuring the crystalline pattern The distance between the edge and the center point of the alignment mark; the correction deviation is calculated depending on the distance; and the correction deviation is added to the reference point to calculate the correction reference point. A method of processing a substrate as described in claim 2, wherein the method Measuring the distance includes measuring a distance between an edge of the crystal pattern and the center point of the alignment mark and between another edge of the crystal pattern and the center point of the alignment mark Another distance. The method of processing a substrate according to claim 3, wherein the calculating of the correction deviation comprises causing the distance between an edge of the crystal pattern and the center point of the alignment mark The difference between the other edge of the crystal pattern and the other distance between the center points of the alignment marks is divided by two. The method of processing a substrate according to claim 4, wherein the correction of the reference point comprises: adding the correction deviation to the reference point or subtracting the correction deviation from the reference point to Allowing the position of the correction reference point to move to the distance between one edge having the crystal pattern and the center point of the alignment mark and the other edge of the crystal pattern and the alignment mark An edge of a larger value among the other distances between the center points. The method of processing a substrate according to claim 1, further comprising: placing the first substrate into the chamber before aligning the first substrate; and marking the first substrate Align the mark. The method of processing a substrate according to claim 2, wherein the identifying the crystalline pattern of the first substrate and the position of the alignment mark returning to the starting position of the first substrate comprises: passing a CCD sense The detector captures the first substrate returned to the starting position of the first substrate and by using the first substrate The captured image identifies the location. The method of treating a substrate according to any one of claims 1 to 7, wherein the first substrate comprises a plurality of segments and the alignment marks are formed for each of the segments. The method of processing a substrate according to claim 8, wherein the alignment of the first substrate, the formation of the crystal pattern, the calculation of the corrected reference point, and the Alignment of the second substrate.