TWI539514B - 基板處理裝置 - Google Patents
基板處理裝置 Download PDFInfo
- Publication number
- TWI539514B TWI539514B TW102131631A TW102131631A TWI539514B TW I539514 B TWI539514 B TW I539514B TW 102131631 A TW102131631 A TW 102131631A TW 102131631 A TW102131631 A TW 102131631A TW I539514 B TWI539514 B TW I539514B
- Authority
- TW
- Taiwan
- Prior art keywords
- phosphoric acid
- substrate
- storage tank
- wafer
- aqueous solution
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims description 138
- 238000012545 processing Methods 0.000 title claims description 72
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 438
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 219
- 238000003860 storage Methods 0.000 claims description 170
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 153
- 239000007864 aqueous solution Substances 0.000 claims description 110
- 239000000243 solution Substances 0.000 claims description 52
- 238000010438 heat treatment Methods 0.000 claims description 30
- 239000007921 spray Substances 0.000 claims description 29
- 238000009835 boiling Methods 0.000 claims description 23
- 230000005855 radiation Effects 0.000 claims description 8
- 238000007599 discharging Methods 0.000 claims description 4
- 238000005530 etching Methods 0.000 description 45
- 239000007788 liquid Substances 0.000 description 23
- 230000002093 peripheral effect Effects 0.000 description 17
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 17
- 239000008367 deionised water Substances 0.000 description 14
- 229910021641 deionized water Inorganic materials 0.000 description 14
- 230000003028 elevating effect Effects 0.000 description 13
- 230000000717 retained effect Effects 0.000 description 12
- 150000004767 nitrides Chemical class 0.000 description 9
- 238000000034 method Methods 0.000 description 8
- 238000004140 cleaning Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 238000001035 drying Methods 0.000 description 6
- 230000001965 increasing effect Effects 0.000 description 6
- 229910019142 PO4 Inorganic materials 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 5
- 239000010452 phosphate Substances 0.000 description 5
- 238000007789 sealing Methods 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- BCZWPKDRLPGFFZ-UHFFFAOYSA-N azanylidynecerium Chemical compound [Ce]#N BCZWPKDRLPGFFZ-UHFFFAOYSA-N 0.000 description 3
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910001936 tantalum oxide Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 2
- 238000009987 spinning Methods 0.000 description 2
- 229910003468 tantalcarbide Inorganic materials 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 241001365789 Oenanthe crocata Species 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- BIXHRBFZLLFBFL-UHFFFAOYSA-N germanium nitride Chemical compound N#[Ge]N([Ge]#N)[Ge]#N BIXHRBFZLLFBFL-UHFFFAOYSA-N 0.000 description 1
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 229920006015 heat resistant resin Polymers 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Weting (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012243596A JP6061378B2 (ja) | 2012-11-05 | 2012-11-05 | 基板処理装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201419396A TW201419396A (zh) | 2014-05-16 |
| TWI539514B true TWI539514B (zh) | 2016-06-21 |
Family
ID=50627001
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW102131631A TWI539514B (zh) | 2012-11-05 | 2013-09-03 | 基板處理裝置 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP6061378B2 (ja) |
| TW (1) | TWI539514B (ja) |
| WO (1) | WO2014069079A1 (ja) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101681183B1 (ko) | 2014-07-11 | 2016-12-02 | 세메스 주식회사 | 기판 처리 장치 |
| US10490426B2 (en) | 2014-08-26 | 2019-11-26 | Lam Research Ag | Method and apparatus for processing wafer-shaped articles |
| US10283384B2 (en) * | 2015-04-27 | 2019-05-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for etching etch layer and wafer etching apparatus |
| JP6306540B2 (ja) * | 2015-06-19 | 2018-04-04 | 東京エレクトロン株式会社 | 基板処理装置および基板処理方法 |
| IL260732B1 (en) | 2016-02-17 | 2024-04-01 | Seagen Inc | BCMA antibodies and their use for the treatment of cancer and immune disorders |
| JP6653608B2 (ja) | 2016-03-29 | 2020-02-26 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理装置および基板処理方法 |
| JP6850650B2 (ja) * | 2017-03-27 | 2021-03-31 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理方法および基板処理装置 |
| JP7291030B2 (ja) * | 2018-09-06 | 2023-06-14 | 株式会社荏原製作所 | 基板処理装置 |
| WO2020050009A1 (ja) | 2018-09-06 | 2020-03-12 | 株式会社荏原製作所 | 基板処理装置 |
| JP7130510B2 (ja) * | 2018-09-21 | 2022-09-05 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理装置および基板処理方法 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0342828A (ja) * | 1989-07-11 | 1991-02-25 | Mitsubishi Electric Corp | 半導体ウエハの処理方法および装置 |
| JPH07161674A (ja) * | 1993-12-08 | 1995-06-23 | Mitsubishi Electric Corp | 半導体ウエハの処理装置およびその処理方法 |
| JPH08236497A (ja) * | 1995-03-01 | 1996-09-13 | Mitsubishi Electric Corp | 半導体ウエハの洗浄・乾燥方法およびその装置 |
| JPH09162153A (ja) * | 1995-12-13 | 1997-06-20 | Sony Corp | 基板表面の液体による処理方法及び基板の液体処理用装置 |
| JPH09199469A (ja) * | 1996-01-23 | 1997-07-31 | Sony Corp | 薬液処理方法及び薬液処理装置 |
| JP3395616B2 (ja) * | 1997-11-20 | 2003-04-14 | 株式会社デンソー | 半導体ウエハのエッチング加工方法及びその装置 |
| KR100292953B1 (ko) * | 1998-06-23 | 2001-11-30 | 윤종용 | 반도체소자제조용식각장치및이를이용한식각방법 |
| JP2002280339A (ja) * | 2001-03-21 | 2002-09-27 | Dainippon Screen Mfg Co Ltd | 基板処理方法及びその装置 |
| JP2005079212A (ja) * | 2003-08-29 | 2005-03-24 | Trecenti Technologies Inc | 半導体製造装置、及び半導体装置の製造方法 |
| JP2008066400A (ja) * | 2006-09-05 | 2008-03-21 | Dainippon Screen Mfg Co Ltd | 基板処理装置および基板処理方法 |
| JP2008235333A (ja) * | 2007-03-16 | 2008-10-02 | Toshiba Corp | 半導体製造装置 |
-
2012
- 2012-11-05 JP JP2012243596A patent/JP6061378B2/ja not_active Expired - Fee Related
-
2013
- 2013-08-22 WO PCT/JP2013/072438 patent/WO2014069079A1/ja active Application Filing
- 2013-09-03 TW TW102131631A patent/TWI539514B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| WO2014069079A1 (ja) | 2014-05-08 |
| TW201419396A (zh) | 2014-05-16 |
| JP6061378B2 (ja) | 2017-01-18 |
| JP2014093449A (ja) | 2014-05-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |