TWI536869B - 用於調整一位置的方法與裝置及計量系統 - Google Patents

用於調整一位置的方法與裝置及計量系統 Download PDF

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Publication number
TWI536869B
TWI536869B TW101127771A TW101127771A TWI536869B TW I536869 B TWI536869 B TW I536869B TW 101127771 A TW101127771 A TW 101127771A TW 101127771 A TW101127771 A TW 101127771A TW I536869 B TWI536869 B TW I536869B
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TW
Taiwan
Prior art keywords
target
energy
mixture
enhanced
sensors
Prior art date
Application number
TW101127771A
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English (en)
Chinese (zh)
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TW201311057A (zh
Inventor
馬修 葛拉漢
史蒂芬 陳
吉姆 克羅奇
伊格爾 佛蒙柯維
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Ａｓｍｌ荷蘭公司
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Application filed by Ａｓｍｌ荷蘭公司 filed Critical Ａｓｍｌ荷蘭公司
Publication of TW201311057A publication Critical patent/TW201311057A/zh
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Publication of TWI536869B publication Critical patent/TWI536869B/zh

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/008—Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation
    • H05G2/0082—Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation the energy-carrying beam being a laser beam
    • H05G2/0086—Optical arrangements for conveying the laser beam to the plasma generation location

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • X-Ray Techniques (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Lasers (AREA)
TW101127771A 2011-08-19 2012-08-01 用於調整一位置的方法與裝置及計量系統 TWI536869B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161525561P 2011-08-19 2011-08-19
US13/249,504 US8993976B2 (en) 2011-08-19 2011-09-30 Energy sensors for light beam alignment

Publications (2)

Publication Number Publication Date
TW201311057A TW201311057A (zh) 2013-03-01
TWI536869B true TWI536869B (zh) 2016-06-01

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW101127771A TWI536869B (zh) 2011-08-19 2012-08-01 用於調整一位置的方法與裝置及計量系統

Country Status (7)

Country Link
US (1) US8993976B2 (enExample)
EP (1) EP2745650A4 (enExample)
JP (1) JP5977828B2 (enExample)
KR (1) KR101949839B1 (enExample)
CN (1) CN103748967B (enExample)
TW (1) TWI536869B (enExample)
WO (1) WO2013028272A1 (enExample)

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US9536631B1 (en) * 2015-11-19 2017-01-03 Asml Netherlands B.V. Systems and methods to avoid instability conditions in a source plasma chamber
WO2017090167A1 (ja) * 2015-11-26 2017-06-01 ギガフォトン株式会社 極端紫外光生成装置
WO2017130346A1 (ja) * 2016-01-28 2017-08-03 ギガフォトン株式会社 極端紫外光生成装置
WO2017154111A1 (ja) * 2016-03-08 2017-09-14 ギガフォトン株式会社 極端紫外光生成装置
WO2017163345A1 (ja) * 2016-03-23 2017-09-28 ギガフォトン株式会社 極端紫外光生成装置及び極端紫外光の重心位置の制御方法
US9778022B1 (en) 2016-09-14 2017-10-03 Asml Netherlands B.V. Determining moving properties of a target in an extreme ultraviolet light source
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WO2018131146A1 (ja) * 2017-01-13 2018-07-19 ギガフォトン株式会社 極端紫外光生成システム
WO2018172012A1 (en) * 2017-03-20 2018-09-27 Asml Netherlands B.V. Lithographic system, euv radiation source, lithographic scanning apparatus and control system
JP6866471B2 (ja) * 2017-03-27 2021-04-28 ギガフォトン株式会社 Ｅｕｖ光生成装置
US11266002B2 (en) 2017-10-26 2022-03-01 Asml Netherlands B.V. System for monitoring a plasma
JP7356439B2 (ja) * 2018-04-03 2023-10-04 エーエスエムエル ネザーランズ ビー．ブイ． 光ビームの空間変調
US20210194202A1 (en) * 2018-09-12 2021-06-24 Cymer, Llc Metrology for a body of a gas discharge stage
NL2023633A (en) * 2018-09-25 2020-04-30 Asml Netherlands Bv Laser system for target metrology and alteration in an euv light source
WO2020086901A1 (en) * 2018-10-26 2020-04-30 Asml Netherlands B.V. Monitoring light emissions
TWI886110B (zh) 2019-01-30 2025-06-11 荷蘭商Ａｓｍｌ荷蘭公司 估計移動目標之性質之方法及裝置
WO2020173683A1 (en) 2019-02-26 2020-09-03 Asml Netherlands B.V. Target supply control apparatus and method in an extreme ultraviolet light source
TWI853016B (zh) * 2019-04-29 2024-08-21 荷蘭商Ａｓｍｌ荷蘭公司 使用機械濾光器之度量衡裝置及方法
US11320744B2 (en) * 2020-05-22 2022-05-03 Taiwan Semiconductor Manufacturing Co., Ltd. Method and apparatus for controlling extreme ultraviolet light
KR20230016620A (ko) * 2020-05-28 2023-02-02 에이에스엠엘 네델란즈 비.브이. 극자외 광원의 정렬 기술
KR20230031288A (ko) * 2020-07-06 2023-03-07 에이에스엠엘 네델란즈 비.브이. 레이저-대-액적 정렬을 위한 시스템 및 방법
CN112629654A (zh) * 2020-12-11 2021-04-09 苏州瑞派宁科技有限公司 检测装置、激光等离子光源及其调节方法
DE102020134109B3 (de) * 2020-12-18 2022-05-25 Primes GmbH Meßtechnik für die Produktion mit Laserstrahlung Vorrichtung und Verfahren zur Fokuslagen-Bestimmung

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Also Published As

Publication number Publication date
EP2745650A4 (en) 2015-05-13
EP2745650A1 (en) 2014-06-25
KR20140053347A (ko) 2014-05-07
KR101949839B1 (ko) 2019-02-19
US20130043401A1 (en) 2013-02-21
TW201311057A (zh) 2013-03-01
CN103748967A (zh) 2014-04-23
JP5977828B2 (ja) 2016-08-24
CN103748967B (zh) 2017-03-22
JP2014531743A (ja) 2014-11-27
WO2013028272A1 (en) 2013-02-28
US8993976B2 (en) 2015-03-31

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