CN103748967B - 用于光束对准的能量传感器 - Google Patents

用于光束对准的能量传感器 Download PDF

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Publication number
CN103748967B
CN103748967B CN201280040305.4A CN201280040305A CN103748967B CN 103748967 B CN103748967 B CN 103748967B CN 201280040305 A CN201280040305 A CN 201280040305A CN 103748967 B CN103748967 B CN 103748967B
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China
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target
energy
light beam
target area
mixture
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Chinese (zh)
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CN103748967A (zh
Inventor
M·R·格雷厄姆
S·常
J·H·克鲁奇
I·V·福缅科夫
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ASML Netherlands BV
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ASML Netherlands BV
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/008—Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation
    • H05G2/0082—Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation the energy-carrying beam being a laser beam
    • H05G2/0086—Optical arrangements for conveying the laser beam to the plasma generation location

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • X-Ray Techniques (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Lasers (AREA)
CN201280040305.4A 2011-08-19 2012-07-10 用于光束对准的能量传感器 Active CN103748967B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201161525561P 2011-08-19 2011-08-19
US61/525,561 2011-08-19
US13/249,504 US8993976B2 (en) 2011-08-19 2011-09-30 Energy sensors for light beam alignment
US13/249,504 2011-09-30
PCT/US2012/046093 WO2013028272A1 (en) 2011-08-19 2012-07-10 Energy sensors for light beam alignment

Publications (2)

Publication Number Publication Date
CN103748967A CN103748967A (zh) 2014-04-23
CN103748967B true CN103748967B (zh) 2017-03-22

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ID=47711970

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201280040305.4A Active CN103748967B (zh) 2011-08-19 2012-07-10 用于光束对准的能量传感器

Country Status (7)

Country Link
US (1) US8993976B2 (enExample)
EP (1) EP2745650A4 (enExample)
JP (1) JP5977828B2 (enExample)
KR (1) KR101949839B1 (enExample)
CN (1) CN103748967B (enExample)
TW (1) TWI536869B (enExample)
WO (1) WO2013028272A1 (enExample)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9148941B2 (en) * 2013-01-22 2015-09-29 Asml Netherlands B.V. Thermal monitor for an extreme ultraviolet light source
US9000405B2 (en) * 2013-03-15 2015-04-07 Asml Netherlands B.V. Beam position control for an extreme ultraviolet light source
US9558858B2 (en) * 2013-08-14 2017-01-31 Kla-Tencor Corporation System and method for imaging a sample with a laser sustained plasma illumination output
JP6220879B2 (ja) 2013-08-27 2017-10-25 ギガフォトン株式会社 極端紫外光生成装置及び極端紫外光生成システム
US9209595B2 (en) * 2014-01-31 2015-12-08 Asml Netherlands B.V. Catalytic conversion of an optical amplifier gas medium
US9271381B2 (en) * 2014-02-10 2016-02-23 Asml Netherlands B.V. Methods and apparatus for laser produced plasma EUV light source
EP3142823B1 (de) * 2014-05-13 2020-07-29 Trumpf Laser- und Systemtechnik GmbH Einrichtung zur überwachung der ausrichtung eines laserstrahls und euv-strahlungserzeugungsvorrichtung damit
WO2016139022A1 (en) * 2015-03-03 2016-09-09 Asml Netherlands B.V. Radiation sensor apparatus
US9927292B2 (en) 2015-04-23 2018-03-27 Asml Netherlands B.V. Beam position sensor
JP6649958B2 (ja) 2015-10-02 2020-02-19 ギガフォトン株式会社 極端紫外光生成システム
WO2017077584A1 (ja) 2015-11-03 2017-05-11 ギガフォトン株式会社 極端紫外光生成装置
US9536631B1 (en) * 2015-11-19 2017-01-03 Asml Netherlands B.V. Systems and methods to avoid instability conditions in a source plasma chamber
WO2017090167A1 (ja) * 2015-11-26 2017-06-01 ギガフォトン株式会社 極端紫外光生成装置
WO2017130346A1 (ja) * 2016-01-28 2017-08-03 ギガフォトン株式会社 極端紫外光生成装置
WO2017154111A1 (ja) * 2016-03-08 2017-09-14 ギガフォトン株式会社 極端紫外光生成装置
WO2017163345A1 (ja) * 2016-03-23 2017-09-28 ギガフォトン株式会社 極端紫外光生成装置及び極端紫外光の重心位置の制御方法
US9778022B1 (en) 2016-09-14 2017-10-03 Asml Netherlands B.V. Determining moving properties of a target in an extreme ultraviolet light source
US10149375B2 (en) * 2016-09-14 2018-12-04 Asml Netherlands B.V. Target trajectory metrology in an extreme ultraviolet light source
WO2018131123A1 (ja) * 2017-01-12 2018-07-19 ギガフォトン株式会社 極端紫外光生成システム
WO2018131146A1 (ja) * 2017-01-13 2018-07-19 ギガフォトン株式会社 極端紫外光生成システム
WO2018172012A1 (en) * 2017-03-20 2018-09-27 Asml Netherlands B.V. Lithographic system, euv radiation source, lithographic scanning apparatus and control system
JP6866471B2 (ja) * 2017-03-27 2021-04-28 ギガフォトン株式会社 Ｅｕｖ光生成装置
US11266002B2 (en) 2017-10-26 2022-03-01 Asml Netherlands B.V. System for monitoring a plasma
JP7356439B2 (ja) * 2018-04-03 2023-10-04 エーエスエムエル ネザーランズ ビー．ブイ． 光ビームの空間変調
US20210194202A1 (en) * 2018-09-12 2021-06-24 Cymer, Llc Metrology for a body of a gas discharge stage
NL2023633A (en) * 2018-09-25 2020-04-30 Asml Netherlands Bv Laser system for target metrology and alteration in an euv light source
WO2020086901A1 (en) * 2018-10-26 2020-04-30 Asml Netherlands B.V. Monitoring light emissions
TWI886110B (zh) 2019-01-30 2025-06-11 荷蘭商Ａｓｍｌ荷蘭公司 估計移動目標之性質之方法及裝置
WO2020173683A1 (en) 2019-02-26 2020-09-03 Asml Netherlands B.V. Target supply control apparatus and method in an extreme ultraviolet light source
TWI853016B (zh) * 2019-04-29 2024-08-21 荷蘭商Ａｓｍｌ荷蘭公司 使用機械濾光器之度量衡裝置及方法
US11320744B2 (en) * 2020-05-22 2022-05-03 Taiwan Semiconductor Manufacturing Co., Ltd. Method and apparatus for controlling extreme ultraviolet light
KR20230016620A (ko) * 2020-05-28 2023-02-02 에이에스엠엘 네델란즈 비.브이. 극자외 광원의 정렬 기술
KR20230031288A (ko) * 2020-07-06 2023-03-07 에이에스엠엘 네델란즈 비.브이. 레이저-대-액적 정렬을 위한 시스템 및 방법
CN112629654A (zh) * 2020-12-11 2021-04-09 苏州瑞派宁科技有限公司 检测装置、激光等离子光源及其调节方法
DE102020134109B3 (de) * 2020-12-18 2022-05-25 Primes GmbH Meßtechnik für die Produktion mit Laserstrahlung Vorrichtung und Verfahren zur Fokuslagen-Bestimmung

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7598509B2 (en) 2004-11-01 2009-10-06 Cymer, Inc. Laser produced plasma EUV light source
US7439530B2 (en) 2005-06-29 2008-10-21 Cymer, Inc. LPP EUV light source drive laser system
DE10251435B3 (de) * 2002-10-30 2004-05-27 Xtreme Technologies Gmbh Strahlungsquelle zur Erzeugung von extrem ultravioletter Strahlung
US7217941B2 (en) * 2003-04-08 2007-05-15 Cymer, Inc. Systems and methods for deflecting plasma-generated ions to prevent the ions from reaching an internal component of an EUV light source
US7217940B2 (en) * 2003-04-08 2007-05-15 Cymer, Inc. Collector for EUV light source
JP4917014B2 (ja) * 2004-03-10 2012-04-18 サイマー インコーポレイテッド Ｅｕｖ光源
US7164144B2 (en) 2004-03-10 2007-01-16 Cymer Inc. EUV light source
EP1775756B1 (en) * 2004-06-24 2011-09-21 Nikon Corporation Euv light source, euv exposure equipment and semiconductor device manufacturing method
US8766212B2 (en) * 2006-07-19 2014-07-01 Asml Netherlands B.V. Correction of spatial instability of an EUV source by laser beam steering
US7633070B2 (en) 2006-12-18 2009-12-15 Kla-Tencor Technologies Corporation Substrate processing apparatus and method
NL1036803A (nl) * 2008-09-09 2010-03-15 Asml Netherlands Bv Radiation system and lithographic apparatus.
WO2010028899A1 (en) * 2008-09-11 2010-03-18 Asml Netherlands B.V. Radiation source and lithographic apparatus
US8138487B2 (en) 2009-04-09 2012-03-20 Cymer, Inc. System, method and apparatus for droplet catcher for prevention of backsplash in a EUV generation chamber
JP5252586B2 (ja) * 2009-04-15 2013-07-31 ウシオ電機株式会社 レーザー駆動光源
WO2011013779A1 (ja) 2009-07-29 2011-02-03 株式会社小松製作所 極端紫外光源装置、極端紫外光源装置の制御方法、およびそのプログラムを記録した記録媒体
US8173985B2 (en) 2009-12-15 2012-05-08 Cymer, Inc. Beam transport system for extreme ultraviolet light source
US8000212B2 (en) 2009-12-15 2011-08-16 Cymer, Inc. Metrology for extreme ultraviolet light source

Also Published As

Publication number Publication date
EP2745650A4 (en) 2015-05-13
EP2745650A1 (en) 2014-06-25
KR20140053347A (ko) 2014-05-07
KR101949839B1 (ko) 2019-02-19
TWI536869B (zh) 2016-06-01
US20130043401A1 (en) 2013-02-21
TW201311057A (zh) 2013-03-01
CN103748967A (zh) 2014-04-23
JP5977828B2 (ja) 2016-08-24
JP2014531743A (ja) 2014-11-27
WO2013028272A1 (en) 2013-02-28
US8993976B2 (en) 2015-03-31

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C53 Correction of patent of invention or patent application
CB02 Change of applicant information

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COR Change of bibliographic data

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