TWI536443B - 蝕刻方法及用於其的蝕刻液、使用其的半導體基板製品的製造方法 - Google Patents

蝕刻方法及用於其的蝕刻液、使用其的半導體基板製品的製造方法 Download PDF

Info

Publication number
TWI536443B
TWI536443B TW101123155A TW101123155A TWI536443B TW I536443 B TWI536443 B TW I536443B TW 101123155 A TW101123155 A TW 101123155A TW 101123155 A TW101123155 A TW 101123155A TW I536443 B TWI536443 B TW I536443B
Authority
TW
Taiwan
Prior art keywords
etching
layer
semiconductor substrate
compound
etching solution
Prior art date
Application number
TW101123155A
Other languages
English (en)
Chinese (zh)
Other versions
TW201306120A (zh
Inventor
上村哲也
Original Assignee
富士軟片股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 富士軟片股份有限公司 filed Critical 富士軟片股份有限公司
Publication of TW201306120A publication Critical patent/TW201306120A/zh
Application granted granted Critical
Publication of TWI536443B publication Critical patent/TWI536443B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • Weting (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • ing And Chemical Polishing (AREA)
TW101123155A 2011-06-30 2012-06-28 蝕刻方法及用於其的蝕刻液、使用其的半導體基板製品的製造方法 TWI536443B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011145330 2011-06-30
JP2012134918A JP5396514B2 (ja) 2011-06-30 2012-06-14 エッチング方法及びこれに用いられるエッチング液、これを用いた半導体基板製品の製造方法

Publications (2)

Publication Number Publication Date
TW201306120A TW201306120A (zh) 2013-02-01
TWI536443B true TWI536443B (zh) 2016-06-01

Family

ID=47789528

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101123155A TWI536443B (zh) 2011-06-30 2012-06-28 蝕刻方法及用於其的蝕刻液、使用其的半導體基板製品的製造方法

Country Status (3)

Country Link
JP (1) JP5396514B2 (ko)
KR (1) KR20130007437A (ko)
TW (1) TWI536443B (ko)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014022657A (ja) * 2012-07-20 2014-02-03 Fujifilm Corp エッチング方法、これを用いた半導体基板製品および半導体素子の製造方法、ならびにエッチング液調製用キット
EP2875521B1 (en) * 2012-07-20 2020-03-11 FUJIFILM Corporation Etching method, and method of producing semiconductor substrate product and semiconductor device using the same
JP6088999B2 (ja) * 2013-05-02 2017-03-01 富士フイルム株式会社 エッチング液およびエッチング液のキット、これをもちいたエッチング方法および半導体基板製品の製造方法
EP3040777B1 (en) * 2013-08-28 2018-03-14 Nissan Chemical Industries, Ltd. Pattern forming method using resist underlayer film
JP6761166B2 (ja) 2015-07-23 2020-09-23 セントラル硝子株式会社 ウェットエッチング方法及びエッチング液
JP6769760B2 (ja) * 2016-07-08 2020-10-14 関東化学株式会社 エッチング液組成物およびエッチング方法
SG11201908791SA (en) 2017-03-31 2019-10-30 Kanto Kagaku Etchant composition for etching titanium layer or titanium-containing layer, and etching method
US10867815B2 (en) * 2018-09-04 2020-12-15 Tokyo Electron Limited Photonically tuned etchant reactivity for wet etching
KR102444014B1 (ko) 2019-02-05 2022-09-15 가부시키가이샤 도쿠야마 실리콘 에칭액 및 상기 에칭액을 이용한 실리콘 디바이스의 제조방법
WO2022080288A1 (ja) 2020-10-16 2022-04-21 セントラル硝子株式会社 ウェットエッチング方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5965465A (en) * 1997-09-18 1999-10-12 International Business Machines Corporation Etching of silicon nitride
US6111619A (en) * 1999-05-27 2000-08-29 Sharp Laboratories Of America, Inc. Method of forming polycrystalline silicon TFTs with TiN/Cu/TiN interconnections for a liquid crystal display pixel array
JP4696565B2 (ja) * 2005-01-19 2011-06-08 三菱化学株式会社 エッチング液及びエッチング方法
US20060226122A1 (en) * 2005-04-08 2006-10-12 Wojtczak William A Selective wet etching of metal nitrides
JP5347237B2 (ja) * 2007-05-15 2013-11-20 三菱瓦斯化学株式会社 洗浄用組成物
JP5583320B2 (ja) * 2007-12-05 2014-09-03 ピーエスフォー ルクスコ エスエイアールエル 半導体ウエハ及びその製造方法
TWI467055B (zh) * 2007-12-21 2015-01-01 Wako Pure Chem Ind Ltd 蝕刻劑及蝕刻方法
JP5037442B2 (ja) * 2008-06-25 2012-09-26 東京応化工業株式会社 窒化チタン除去液、窒化チタン被膜の除去方法、及び窒化チタン除去液の製造方法

Also Published As

Publication number Publication date
JP2013033942A (ja) 2013-02-14
KR20130007437A (ko) 2013-01-18
TW201306120A (zh) 2013-02-01
JP5396514B2 (ja) 2014-01-22

Similar Documents

Publication Publication Date Title
TWI536443B (zh) 蝕刻方法及用於其的蝕刻液、使用其的半導體基板製品的製造方法
TWI602905B (zh) 半導體基板的蝕刻液、使用其的蝕刻方法及半導體元件的製造方法
JP6063206B2 (ja) エッチング液、これを用いたエッチング方法及び半導体素子の製造方法
CN107022421B (zh) 清洗方法、及半导体装置的制造方法
JP5519728B2 (ja) エッチング方法及びこれに用いられるエッチング液、これを用いた半導体素子の製造方法
JP6017273B2 (ja) 半導体基板のエッチング方法及び半導体素子の製造方法
JP2014022657A (ja) エッチング方法、これを用いた半導体基板製品および半導体素子の製造方法、ならびにエッチング液調製用キット
TWI504740B (zh) 清潔組成物、使用其的洗淨方法及半導體元件的製造方法
KR20170008781A (ko) Tin 풀-백 및 클리닝 조성물
US9558953B2 (en) Etching method, and method of producing semiconductor substrate product and semiconductor device using the same
US9688912B2 (en) Etching method, and etching liquid to be used therein and method of producing a semiconductor substrate product using the same
JP5731295B2 (ja) キャパシタ構造の形成方法及びこれに用いられるシリコンエッチング液
JP6017275B2 (ja) 半導体基板のエッチング方法及び半導体素子の製造方法
KR20160091615A (ko) 티타늄막 식각액 조성물
KR20150096126A (ko) 반도체 소자 세정용 조성물