TWI536443B - 蝕刻方法及用於其的蝕刻液、使用其的半導體基板製品的製造方法 - Google Patents

蝕刻方法及用於其的蝕刻液、使用其的半導體基板製品的製造方法 Download PDF

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Publication number
TWI536443B
TWI536443B TW101123155A TW101123155A TWI536443B TW I536443 B TWI536443 B TW I536443B TW 101123155 A TW101123155 A TW 101123155A TW 101123155 A TW101123155 A TW 101123155A TW I536443 B TWI536443 B TW I536443B
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TW
Taiwan
Prior art keywords
etching
layer
semiconductor substrate
compound
etching solution
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Application number
TW101123155A
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English (en)
Chinese (zh)
Other versions
TW201306120A (zh
Inventor
上村哲也
Original Assignee
富士軟片股份有限公司
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Publication date
Application filed by 富士軟片股份有限公司 filed Critical 富士軟片股份有限公司
Publication of TW201306120A publication Critical patent/TW201306120A/zh
Application granted granted Critical
Publication of TWI536443B publication Critical patent/TWI536443B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • Weting (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • ing And Chemical Polishing (AREA)
TW101123155A 2011-06-30 2012-06-28 蝕刻方法及用於其的蝕刻液、使用其的半導體基板製品的製造方法 TWI536443B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011145330 2011-06-30
JP2012134918A JP5396514B2 (ja) 2011-06-30 2012-06-14 エッチング方法及びこれに用いられるエッチング液、これを用いた半導体基板製品の製造方法

Publications (2)

Publication Number Publication Date
TW201306120A TW201306120A (zh) 2013-02-01
TWI536443B true TWI536443B (zh) 2016-06-01

Family

ID=47789528

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101123155A TWI536443B (zh) 2011-06-30 2012-06-28 蝕刻方法及用於其的蝕刻液、使用其的半導體基板製品的製造方法

Country Status (3)

Country Link
JP (1) JP5396514B2 (ko)
KR (1) KR20130007437A (ko)
TW (1) TWI536443B (ko)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014022657A (ja) * 2012-07-20 2014-02-03 Fujifilm Corp エッチング方法、これを用いた半導体基板製品および半導体素子の製造方法、ならびにエッチング液調製用キット
KR101630654B1 (ko) * 2012-07-20 2016-06-15 후지필름 가부시키가이샤 에칭방법, 이것을 사용한 반도체 기판 제품 및 반도체 소자의 제조방법
WO2014178421A1 (ja) * 2013-05-02 2014-11-06 富士フイルム株式会社 エッチング液およびエッチング液のキット、これをもちいたエッチング方法および半導体基板製品の製造方法
CN105492973B (zh) * 2013-08-28 2019-06-11 日产化学工业株式会社 应用了抗蚀剂下层膜的图案形成方法
JP6761166B2 (ja) 2015-07-23 2020-09-23 セントラル硝子株式会社 ウェットエッチング方法及びエッチング液
JP6769760B2 (ja) * 2016-07-08 2020-10-14 関東化学株式会社 エッチング液組成物およびエッチング方法
TWI808965B (zh) 2017-03-31 2023-07-21 日商關東化學股份有限公司 鈦層或含鈦層的蝕刻液組成物以及蝕刻方法
US10867815B2 (en) * 2018-09-04 2020-12-15 Tokyo Electron Limited Photonically tuned etchant reactivity for wet etching
KR102444014B1 (ko) 2019-02-05 2022-09-15 가부시키가이샤 도쿠야마 실리콘 에칭액 및 상기 에칭액을 이용한 실리콘 디바이스의 제조방법
CN116324036A (zh) 2020-10-16 2023-06-23 中央硝子株式会社 湿式蚀刻方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5965465A (en) * 1997-09-18 1999-10-12 International Business Machines Corporation Etching of silicon nitride
US6111619A (en) * 1999-05-27 2000-08-29 Sharp Laboratories Of America, Inc. Method of forming polycrystalline silicon TFTs with TiN/Cu/TiN interconnections for a liquid crystal display pixel array
JP4696565B2 (ja) * 2005-01-19 2011-06-08 三菱化学株式会社 エッチング液及びエッチング方法
JP2008536312A (ja) * 2005-04-08 2008-09-04 サッチェム， インコーポレイテッド 金属窒化物の選択的なウェットエッチング
JP5347237B2 (ja) * 2007-05-15 2013-11-20 三菱瓦斯化学株式会社 洗浄用組成物
JP5583320B2 (ja) * 2007-12-05 2014-09-03 ピーエスフォー ルクスコ エスエイアールエル 半導体ウエハ及びその製造方法
CN101903988B (zh) * 2007-12-21 2013-07-31 和光纯药工业株式会社 蚀刻剂、蚀刻方法及蚀刻剂制备液
JP5037442B2 (ja) * 2008-06-25 2012-09-26 東京応化工業株式会社 窒化チタン除去液、窒化チタン被膜の除去方法、及び窒化チタン除去液の製造方法

Also Published As

Publication number Publication date
TW201306120A (zh) 2013-02-01
JP2013033942A (ja) 2013-02-14
JP5396514B2 (ja) 2014-01-22
KR20130007437A (ko) 2013-01-18

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